CN102158064A - Turn-off power semiconductor device valve and tandem topology structure thereof - Google Patents
Turn-off power semiconductor device valve and tandem topology structure thereof Download PDFInfo
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- CN102158064A CN102158064A CN2011100277167A CN201110027716A CN102158064A CN 102158064 A CN102158064 A CN 102158064A CN 2011100277167 A CN2011100277167 A CN 2011100277167A CN 201110027716 A CN201110027716 A CN 201110027716A CN 102158064 A CN102158064 A CN 102158064A
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- power semiconductor
- semiconductor device
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- parallel
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a turn-off power semiconductor device valve and a tandem topology structure thereof. The turn-off power semiconductor device valve is formed by two turn-off power semiconductor devices and diodes, wherein the two turn-off power semiconductor devices are connected with each other in parallel between a forward current inlet and a reverse current inlet; and the diodes correspond to the turn-off power semiconductor devices and are connected in parallel reversely. A plurality of turn-off power semiconductor device valves are connected in series in turn to form the tandem topology structure. The turn-off power semiconductor devices adopted by the invention are not only limited to insulated gate bipolar transistors (IGBT), and can adopt other types of the turn-off power semiconductor devices. The tandem topology structure allows difference between the on-time and the off-time of the turn-off power semiconductor devices in each turn-off power semiconductor device valve; the function of the overall tandem topology structure can be equivalent to a turn-off power semiconductor device; and the terminal voltage overshot is adsorbed by a capacitor.
Description
Technical field
But the present invention relates to power electronics and use switch-off power semiconductor device valve field, but be specially a kind of switch-off power semiconductor device valve and tandem topological structure thereof.
Background technology
In field of power electronics, owing to lack the high pressure turn-off device, in fully controlled bridge device, the DC chopper of electric energy transducer and the occasion that similarly needs turn-off device, their the highest grade of operating voltage can only accomplish several kilovolts.Reach in the application more than tens kilovolts, adopt modular multilevel converter, it is to utilize multimode to be composed in series AC/DC or DC/AC conversion that a controllable voltage source is realized electric energy, and concrete structure and control model are seen open source literature " new development of cascaded inverter ".Switching device can only adopt IGBT, and the IGBT number needs of each elementary cell is wanted 4, and the capacity of electric capacity is bigger; Make whole cascade cost improve.Siemens Company's patent No. is the international patent of invention of PCT/DE2006/002247, it is to utilize multimode to be composed in series AC/DC or DC/AC conversion that a controllable voltage source is realized electric energy, and concrete structure and control model are specifically seen patent PCT/DE2006/002247; This structure makes the number of switches of each elementary cell reduce 1 half, and each unit needs 2 IGBT, because the function of each unit is a voltage source, so the capacitor volume of each unit is still very big, takies than large space.
Summary of the invention
But the purpose of this invention is to provide a kind of switch-off power semiconductor device valve and tandem topological structure thereof, can only adopt IGBT to cause cost higher to solve prior art high pressure turn-off device, big problem takes up room.
In order to achieve the above object, the technical solution adopted in the present invention is:
But switch-off power semiconductor device valve, include electric current forward inlet, current reversal inlet, it is characterized in that: but described electric current forward enters the mouth, current reversal is connected to two switch-off power semiconductor device parallel with one another between entering the mouth, but one of them switch-off power semiconductor device forward conduction, but another switch-off power semiconductor device reverse-conducting, and but the switch-off power semiconductor device of reverse-conducting is serially connected with electric capacity, but on each switch-off power semiconductor device also respectively separately reverse parallel connection diode is arranged.
But described switch-off power semiconductor device valve is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, in parallel each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, also parallel with one another each other; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
But described switch-off power semiconductor device valve is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, series connection each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, each other also series connection mutually; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
But described switch-off power semiconductor device valve is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, be divided into parallel with one another many groups, but the switch-off power semiconductor device of the forward conduction in every group is connected each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, and also is divided into into parallel with one another many groups, but the switch-off power semiconductor device of the reverse-conducting in every group is connected each other; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
But described switch-off power semiconductor device valve is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, constitutes the connection in series-parallel array; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, and also constitutes the connection in series-parallel array; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
But described switch-off power semiconductor device valve, it is characterized in that: described electric capacity has a plurality of, each other series connection.
But described tandem switch-off power semiconductor device valve, it is characterized in that: described electric capacity has a plurality of, is divided into parallel with one another many groups, and a plurality of electric capacity in every group are connected each other.
But described switch-off power semiconductor device valve, it is characterized in that: described electric capacity has a plurality of, constitutes the connection in series-parallel array.
But a kind of tandem switch-off power semiconductor device valve topological structure, it is characterized in that: but include a plurality of switch-off power semiconductor device valves, but the electric current forward of a plurality of switch-off power semiconductor device valves inlet, current reversal inlet interconnect successively, constitute the tandem topological structure.
Among the present invention, but but switch-off power semiconductor device valve refers to one group of power semiconductor that the one or more switch-off power semiconductor device that limited by 2 terminals and auxiliary unit constitute.They are as a cell operation, and have can be on two-way the characteristic of transmission current.
But the switch-off power semiconductor device among the present invention is meant a kind of power semiconductor, and it can become conduction and non-conductive state by the control signal that is applied to the control input.As insulated gate bipolar transistor (IGBT:Insulated Gate Bipolar Transistor), integrated gate commutated thyristor (IGCT:Integrated gate-commutated thyristor), electronics IEGT (IEGT:Injection Enhanced Gate Transistor) and metal-oxide semiconductor (MOS) control thyristor (MCT:MOS Controlled Thyristor), etc.; But also can be the switch-off power device of other type.
But the present invention can be applicable to the high pressure switch-off power semiconductor device valve that high-tension AC/DC, DC/AC, DC/DC and AC/AC device for converting electric energy use, and its operating voltage can be from 1kV to the 1000kV scope.Particularly be applied in the voltage source converter (VSC:voltage source converter) of flexible DC power transmission, STATCOM (STATCOM:static synchronous compensator) and THE UPFC (UPFC:unified power flow controller), operating voltage surpasses the brachium pontis of the fully controlled bridge of 1kV, also can be applicable to the fields such as high pressure gate-controlled switch of DC chopper.
But switch-off power semiconductor device of the present invention is not limited only to IGBT, but can also adopt the switch-off power semiconductor device of other type, as IGCT, IEGT and MCT etc.; But tandem topological structure of the present invention is to adopt quantity to be in series more than 1 group switch-off power semiconductor device valve, but but the time of switch-off power semiconductor device conducting in each switch-off power semiconductor device valve of permission or shutoff is variant, the concrete time difference can determine according to electrical design, but by each switch-off power semiconductor device valve Autonomous Control; But the function of whole tandem topological structure can equivalence be a switch-off power semiconductor device, but but disconnects the electric capacity absorption that the terminal voltage overshooting problem that constantly causes is passed through switch-off power semiconductor device valve inside at the switch-off power semiconductor device.The tandem topological structure can adopt the liquid cools also can be air-cooled.
Description of drawings
But Fig. 1 is the present invention's switch-off power semiconductor device valve circuit theory diagrams.
But but Fig. 2 is switch-off power semiconductor device derived structure circuit theory diagrams in the present invention's switch-off power semiconductor device valve, wherein:
But Fig. 2 a is a switch-off power semiconductor device parallel-connection structure, but Fig. 2 b is a switch-off power semiconductor device cascaded structure, but Fig. 2 c is the switch-off power semiconductor device parallel-connection structure again of connecting earlier, but Fig. 2 d is a switch-off power semiconductor device connection in series-parallel array structure.
But Fig. 3 is electric capacity derived structure circuit theory diagrams in the present invention's switch-off power semiconductor device valve, wherein:
Fig. 3 a is the capacitances in series structure, and Fig. 3 b is a parallel-connection structure again after the capacitances in series, and Fig. 3 c is an electric capacity connection in series-parallel array structure.
But Fig. 4 is the present invention's switch-off power semiconductor device valve tandem topological structure circuit theory diagrams.
Fig. 5 is for using the voltage source converter topological structure circuit theory diagrams of tandem topological structure of the present invention.
Fig. 6 is for using the DC/DC energy conversion topological structure circuit theory diagrams of tandem topological structure of the present invention, wherein:
Fig. 6 a is the DC boosting topological structure, and Fig. 6 b is the DC decompression topological structure.
Embodiment
As Fig. 1, Fig. 2, shown in Figure 3, but but switch-off power semiconductor device valve M is by switch-off power semiconductor device S1, S2, diode D1, D2 and capacitor C are formed.But diode D1 and switch-off power semiconductor device S1 reverse parallel connection, but diode D2 and switch-off power semiconductor device S2 reverse parallel connection, switch element of they common compositions, but but the forward current of switch-off power semiconductor device valve M by switch-off power semiconductor device S1 control its conducting or by, reverse current flows through from diode D1 or capacitor C.But but switch-off power semiconductor device S2 is in parallel with switch-off power semiconductor device S1 after connecting with capacitor C, but just formed a switch-off power semiconductor device valve M.But but the structure of switch-off power semiconductor device can derive other several structures among the switch-off power semiconductor device valve M; But switch-off power semiconductor device valve M internal capacitance C also can derive other several structures; These several different structures mainly are to utilize many switching devices to carry out connection in series-parallel respectively to form different topological structures, capacitor C is because capacity and withstand voltage relation, also can use many capacitors to carry out connection in series-parallel and form a big capacitor group, equivalence is that a capacitor C is used.
But two ports of major loop of switch-off power semiconductor device valve M are respectively A and B, and A is an electric current forward inlet, and B is the current reversal inlet.But two ports of all switch-off power semiconductor device valve M are identical.But the operation principle of switch-off power semiconductor device valve M is: major loop needs forward current, but when switch-off power semiconductor device S1 conducting, forward current enters from A, but by switch-off power semiconductor device S1 to B; But if switch-off power semiconductor device S1 by, so forward current just by, but the forward current of switch-off power semiconductor device valve M is zero.Major loop needs reverse current, but switch-off power semiconductor device S1 end, reverse current flows into from B, but through the inverse parallel diode D1 of switch-off power semiconductor device S1 to A; If but switch-off power semiconductor device S2 conducting, reverse current flows into from B so, but passes through switch-off power semiconductor device S2 to A through capacitor C., switch-off power semiconductor device valve M absorbs by capacitor C but but turn-offing the voltage overshoot that produces constantly at switch-off power semiconductor device S1, also just but switch-off power semiconductor device valve M flows through forward current, when needing to turn-off this electric current, but turn-off switch-off power semiconductor device S1, but make forward current flow to B by the diode D2 of switch-off power semiconductor device valve M and the series arm of capacitor C, forward current charges to capacitor C, and main circuit current drops to zero gradually; This moment capacitor C charging voltage when being higher than supply power voltage, but closure switch-off power semiconductor device S2 again makes the energy storage of capacitor C discharge to major loop; At this moment but switch-off power semiconductor device valve M flows through reverse current, and the path is to flow into from B, but arrives A through the series arm of capacitor C and switch-off power semiconductor device S2; When the voltage of capacitor C equates with main circuit power supply voltage, but the electric current vanishing of switch-off power semiconductor device valve M.
As shown in Figure 4.If but the switch-off power semiconductor device valve M quantity of series connection is N (N is the natural number greater than 1), form a series connection valve, series system is as follows: but the A of first switch-off power semiconductor device valve M is connected with the design point of major loop, but but the A of second switch-off power semiconductor device valve M be connected with the B of first switch-off power semiconductor device valve M, but its B is connected with the A of the 3rd switch-off power semiconductor device valve M; By that analogy, but but the A of N switch-off power semiconductor device valve M be connected with the B of the individual switch-off power semiconductor device valve M of N-1, its B is connected with the design point of major loop.But but the switch-off power semiconductor device S1 synchronization action of N switch-off power semiconductor device valve M, but also synchronization action of switch-off power semiconductor device S2, but the above-mentioned single switch-off power semiconductor device valve M's of their logical AND that puts into operation is identical.From the series connection valve, but it can equivalence be the operational mode of a switch-off power semiconductor device valve M.
As shown in Figure 5.Utilize the series connection valve to form the upper and lower bridge arm of fully controlled bridge, make voltage source converter carry out the AC/DC energy conversion, also can carry out the energy conversion of DC/AC by control system.Among Fig. 5, V is an alternating-current voltage source, and L is an inductance, and C is that direct current is surveyed capacitor.
As shown in Figure 6.E is a direct voltage source among the figure, and L is an inductance, and D is a diode, and C is an electric capacity, and R is load; S is the series connection valve, and its structure is identical with topological structure among Fig. 4.
Claims (9)
1. but switch-off power semiconductor device valve, include electric current forward inlet, current reversal inlet, it is characterized in that: but described electric current forward enters the mouth, current reversal is connected to two switch-off power semiconductor device parallel with one another between entering the mouth, but one of them switch-off power semiconductor device forward conduction, but another switch-off power semiconductor device reverse-conducting, and but the switch-off power semiconductor device of reverse-conducting is serially connected with electric capacity, but on each switch-off power semiconductor device also respectively separately reverse parallel connection diode is arranged.
2. but switch-off power semiconductor device valve according to claim 1 is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, in parallel each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, also parallel with one another each other; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
3. but switch-off power semiconductor device valve according to claim 1 is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, series connection each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, each other also series connection mutually; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
4. but switch-off power semiconductor device valve according to claim 1, it is characterized in that: but the switch-off power semiconductor device of described forward conduction has a plurality of, be divided into parallel with one another many groups, but the switch-off power semiconductor device of the forward conduction in every group is connected each other; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, and also is divided into into parallel with one another many groups, but the switch-off power semiconductor device of the reverse-conducting in every group is connected each other; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
5. but switch-off power semiconductor device valve according to claim 1 is characterized in that: but that the switch-off power semiconductor device of described forward conduction has is a plurality of, constitutes the connection in series-parallel array; It is a plurality of that but the switch-off power semiconductor device of reverse-conducting has, and also constitutes the connection in series-parallel array; But on each switch-off power semiconductor device respectively separately reverse parallel connection diode is arranged.
6. but switch-off power semiconductor device valve according to claim 1, it is characterized in that: described electric capacity has a plurality of, each other series connection.
But 7. tandem switch-off power semiconductor device valve according to claim 1, it is characterized in that: described electric capacity has a plurality of, is divided into parallel with one another many groups, and a plurality of electric capacity in every group are connected each other.
8. but switch-off power semiconductor device valve according to claim 1, it is characterized in that: described electric capacity has a plurality of, constitutes the connection in series-parallel array.
9. but tandem switch-off power semiconductor device valve topological structure, it is characterized in that: but include a plurality of switch-off power semiconductor device valves, but the electric current forward of a plurality of switch-off power semiconductor device valves inlet, current reversal inlet interconnect successively, constitute the tandem topological structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100277167A CN102158064A (en) | 2011-01-26 | 2011-01-26 | Turn-off power semiconductor device valve and tandem topology structure thereof |
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| CN2011100277167A CN102158064A (en) | 2011-01-26 | 2011-01-26 | Turn-off power semiconductor device valve and tandem topology structure thereof |
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| CN102158064A true CN102158064A (en) | 2011-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324862A (en) * | 2011-09-29 | 2012-01-18 | 东南大学 | Multilevel voltage pumping device |
| WO2016092091A1 (en) * | 2014-12-12 | 2016-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multicell for cell-based converters |
| WO2017009010A1 (en) * | 2015-07-10 | 2017-01-19 | Siemens Aktiengesellschaft | Sub-module of a modular cascaded coverter |
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| DE10103031A1 (en) * | 2001-01-24 | 2002-07-25 | Rainer Marquardt | Current rectification circuit for voltage source inverters with separate energy stores replaces phase blocks with energy storing capacitors |
| CN101258670A (en) * | 2005-09-09 | 2008-09-03 | 西门子公司 | Equipment used for transferring electric energy |
| WO2009115141A1 (en) * | 2008-03-19 | 2009-09-24 | Siemens Aktiengesellschaft | Method for controlling a multi-phase power converter having distributed energy accumulator at low output frequencies |
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| DE10103031A1 (en) * | 2001-01-24 | 2002-07-25 | Rainer Marquardt | Current rectification circuit for voltage source inverters with separate energy stores replaces phase blocks with energy storing capacitors |
| CN101258670A (en) * | 2005-09-09 | 2008-09-03 | 西门子公司 | Equipment used for transferring electric energy |
| WO2009115141A1 (en) * | 2008-03-19 | 2009-09-24 | Siemens Aktiengesellschaft | Method for controlling a multi-phase power converter having distributed energy accumulator at low output frequencies |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324862A (en) * | 2011-09-29 | 2012-01-18 | 东南大学 | Multilevel voltage pumping device |
| CN102324862B (en) * | 2011-09-29 | 2014-06-18 | 东南大学 | Multilevel voltage pumping device |
| WO2016092091A1 (en) * | 2014-12-12 | 2016-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multicell for cell-based converters |
| WO2017009010A1 (en) * | 2015-07-10 | 2017-01-19 | Siemens Aktiengesellschaft | Sub-module of a modular cascaded coverter |
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Application publication date: 20110817 |