CN102142522B - Organic photoelectric device adopting metal absorption layer - Google Patents
Organic photoelectric device adopting metal absorption layer Download PDFInfo
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- CN102142522B CN102142522B CN201110000184.8A CN201110000184A CN102142522B CN 102142522 B CN102142522 B CN 102142522B CN 201110000184 A CN201110000184 A CN 201110000184A CN 102142522 B CN102142522 B CN 102142522B
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- organic photoelectric
- photoelectric device
- absorption layer
- metal absorption
- metal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of an organic photoelectric device, in particular to an organic photoelectric device adopting a metal absorption layer. In the invention, a metal absorption layer Al is inserted into the original organic photoelectric device, and the thickness of the metal absorption layer Al is 3-10nm. The invention finds and confirms that the light absorption of a metal material can promote the generation of current carriers in the organic photoelectric device, thereby filling a cognitive blind area in the field of the traditional organic photoelectric device, and opening a new way for the performance improvement of the organic photoelectric device.
Description
Technical field
The invention belongs to organic electro-optic device technical field, be specifically related to a kind of organic electro-optic device.
Background technology
Organic electro-optic device, is called again organic solar batteries device, and its photoelectric conversion efficiency is always far below inorganic semiconductor solar cell.Cause the main cause of inefficiency to be that the photoproduction exciton of organic material has higher binding energy, being difficult to dissociate under the effect of warm-up movement and internal electric field becomes charge carrier freely.Organic solar batteries in the past generally adopts the structure of Electron donor acceptor heterojunction, utilizes the efficient exciton split process in heterojunction boundary place, promotes the generation speed of free carrier.But the main region of light absorption, is not near region heterojunction boundary conventionally, this causes a lot of photoproduction excitons far away apart from interface to be wasted.A lot of metal materials (as Al) have extremely strong absorption to visible ray, if this part light absorption can be converted into the generation of free carrier, the structural design to efficient organic solar batteries are brought to great convenience.
Summary of the invention
The object of the present invention is to provide the organic electro-optic device that a kind of photoelectric conversion efficiency is high.
Organic electro-optic device provided by the invention, is to utilize the strong absorption characteristic of metal material to sunlight, to increase the number of photo-generated carrier in organic solar batteries, and then promotes photoelectric conversion efficiency.
The core theory of organic electro-optic device proposed by the invention is near the generation of free carrier in the organic material light absorption of metal contributes to.The Data support that this is theoretical, comes from a series of transient state photovoltage of inventor experimental result.
In the transient state photovoltage research of the organic electro-optic device that is ITO/CuPc/Al for structure, find along with the thickness of Al is increased to 94nm by 30nm, 355nm laser is during from Al mono-side incident, and the intensity of transient state photovoltage only decays to 0.9V by 1.0V, as shown in Figure 2.Theoretical calculating shows that the Al of 94nm only has 10 to the transmissivity of 355nm laser
-7magnitude, so low transmitance causes organic layer substantially without any light absorption.But now transient state photoelectric signal has but still kept higher intensity, this means and in organic layer, produced a considerable amount of free carriers.According to analysis above, the energy source of photo-generated carrier is the light absorption of Al.
In further experiment, it is the device of ITO/Al (xnm)/NPB (500nm)/Au that inventor has designed structure, and x is respectively 3,6,9.Because the work function of Au is greater than Al, internal electric field points to Au by Al, and therefore transient state photoelectric signal polarity is for negative.As shown in Figure 3, along with the thickness of Al is increased to 9nm from 3nm, negative signal extreme value does not almost change (~ 0.55V) to experimental result, and the life-span of signal significantly extends.Consider that transient state photovoltage mainly comes from the directional drift of free carrier under internal electric field effect, when free carrier approach exhaustion, drift current reduces rapidly, and diffuse in reverse direction electric current starts to occupy leading, and signal presents attenuation trend.Therefore the increase in signal life-span, shows to have more free carrier to produce under illumination, proving again the light absorption of Al can increase the free carrier number in organic layer.
Promote according to Al light absorption the effect that in organic layer, free carrier produces, the present invention inserts metal absorption layer Al in original organic solar batteries device.The thickness of metal absorption layer Al is 3 ~ 10nm.For example select 3-9 nm.In view of the extinction coefficient of metal A l larger, taking traditional heterojunction structure of CuPc (20nm)/C60 (40nm) structure as example, Al insert layer can ensure that light field has high distribution near this layer, thereby improves the efficiency of light absorption and separation of charge.
Compare traditional organic solar batteries device, the invention has the advantages that the strong absorption that takes full advantage of metal pair sunlight.Because the carrier mobility of organic material is lower, the film thickness of non-series connection device is generally only less than 100nm, thereby restricted the absorption of material to light.The present invention can overcome certain defect to a certain extent.According to existing transient state photovoltage experimental result, the insertion of metal absorption layer of the present invention brings 20 ~ 30% lifting to organic molecule heterojunction solar battery efficiency.
Brief description of the drawings
Fig. 1 is device architecture diagram of the present invention.
Fig. 2 is the transient state photovoltage experimental result comparison diagram of Al thickness for a change.
Fig. 3 is that the thin layer Al of different-thickness affects comparison diagram to transient state photovoltage experimental result.
Embodiment
Embodiment:
Device architecture as shown in Figure 1, adopts traditional ITO/CuPc/C60/Al heterojunction structure, inserts thin layer Al(3 ~ 10nm between CuPc and C60).Heterojunction thickness is CuPc (20nm)/C60 (40nm), can ensure that like this light field is mainly distributed in Al insert layer place.In addition, if insert layer is identical with cathode material, may cause internal electric field between the two is zero, is unfavorable for the derivation of electronics.Therefore cathode material must be replaced with to the metal that work function is lower, as Li or Mg:Ag etc.
Claims (1)
1. an organic electro-optic device, is characterized in that, in original organic electro-optic device structure, inserts metal absorption layer Al, and the thickness of this metal absorption layer Al is 3 ~ 10nm;
Described original organic electro-optic device structure is ITO/CuPc/C60/Al heterojunction structure, inserts metal absorption layer Al between CuPc and C60;
The cathode material Al of described original organic electro-optic device replaces with metal Li or the Mg:Ag that work function is lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110000184.8A CN102142522B (en) | 2011-01-04 | 2011-01-04 | Organic photoelectric device adopting metal absorption layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110000184.8A CN102142522B (en) | 2011-01-04 | 2011-01-04 | Organic photoelectric device adopting metal absorption layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102142522A CN102142522A (en) | 2011-08-03 |
| CN102142522B true CN102142522B (en) | 2014-09-03 |
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| CN201110000184.8A Expired - Fee Related CN102142522B (en) | 2011-01-04 | 2011-01-04 | Organic photoelectric device adopting metal absorption layer |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1579023A (en) * | 2001-06-11 | 2005-02-09 | 普林斯顿大学理事会 | Organic photovoltaic devices |
| CN1620212A (en) * | 2003-11-10 | 2005-05-25 | 城户淳二 | Organic devices and organic devices production method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1611484B1 (en) * | 2003-03-19 | 2021-11-10 | Heliatek GmbH | Photoactive component comprising organic layers |
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2011
- 2011-01-04 CN CN201110000184.8A patent/CN102142522B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1579023A (en) * | 2001-06-11 | 2005-02-09 | 普林斯顿大学理事会 | Organic photovoltaic devices |
| CN1620212A (en) * | 2003-11-10 | 2005-05-25 | 城户淳二 | Organic devices and organic devices production method |
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| CN102142522A (en) | 2011-08-03 |
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