CN102142445B - Array substrate of active component and production method thereof - Google Patents
Array substrate of active component and production method thereof Download PDFInfo
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- CN102142445B CN102142445B CN 201010604708 CN201010604708A CN102142445B CN 102142445 B CN102142445 B CN 102142445B CN 201010604708 CN201010604708 CN 201010604708 CN 201010604708 A CN201010604708 A CN 201010604708A CN 102142445 B CN102142445 B CN 102142445B
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Abstract
The invention relates to an array substrate of an active component and a production method thereof. In the invention, particles are doped in a photoresist; and the particle-doped photoresist is coated on a protective layer through a spin coating method and the like to form a photoresist layer provided with raised patterns on the surface, wherein the diameter of at least part of particles is larger than the thickness of the photoresist layer. Therefore, the forming method of the raised patterns, provided by the invention, is simpler and easier, so that the use of traditional photomasks can be reduced, and therefore the load on the production cost is reduced. In addition, as the raised patterns are formed on the surface of the photoresist layer, and a reflecting electrode is conformally arranged above the raised patterns, so that the array substrate of the active component can be applied on a transflective or total-reflective type liquid crystal display panel.
Description
Technical field
The invention relates to a kind of multiple substrate and preparation method thereof, and particularly relevant for a kind of active assembly array base plate and preparation method thereof.
Background technology
In general; making the display of semi-penetration semi-reflective or total-reflection type can make of seven road processing procedure modes usually; wherein the display of semi-penetration semi-reflective or total-reflection type can utilize backlight when showing of extraneous light usually; so can save the consumption of traditional backlight module on electric power; even can reduce the usable floor area of backlight module, and reach the purpose that reduces costs.
In addition, in order to increase catoptrical utilance, so the technology of the most structure that can produce roughening on the surface in the echo area reaches this order ground.For example, can utilize traditionally half mode light shield (half tone mask, HTM Mask) processing procedure to complete.Yet, be at least the twice of traditional light shield due to the cost of manufacture of half mode light shield, so will make the cost of the display of making semi-penetration semi-reflective or total-reflection type effectively to be lowered.
Summary of the invention
The invention provides a kind of active assembly array base plate, it forms raised design through being mixed with particulate, thereby can be applicable in the display unit of total reflection or semi-penetration semi-reflective.
The present invention separately provides a kind of manufacture method of active assembly array base plate, and it can produce above-mentioned active assembly array base plate, and has comparatively easy fabrication steps and cost.
The present invention proposes a kind of active assembly array base plate, and it comprises a substrate, a plurality of driving component, a protective layer, a photoresist layer, a plurality of particulate, a plurality of transparency electrode and a plurality of reflecting electrode.Substrate defines a plurality of the firstth district and a plurality of Second Region.Driving component is disposed on substrate and is positioned at these the firstth districts.Each these driving component has a gate, an active layers, a drain and one source pole, and wherein active layers is electrically connected drain and source electrode.Protective layer is disposed on substrate and covers these driving components.Protective layer has a plurality of the first openings, and wherein each these opening exposes respectively the drain of each corresponding these driving component.The photoresist layer is disposed on protective layer, and has a thickness and a plurality of the second opening, and wherein each these second opening exposes each these first opening.Particulate is disposed in the photoresist layer and consists of a plurality of raised designs on the surface of photoresist layer, and wherein these raised designs are positioned at these the firstth districts at least, and the particle diameter of at least part of these particulates is greater than the thickness of photoresist layer.Transparency electrode is disposed on substrate and covers the photoresist layer, and these transparency electrodes are conformal in these raised designs.Each these transparency electrode sequentially is electrically connected with the drain of corresponding each these driving component by the second opening and the first opening.Reflecting electrode is disposed at respectively on these transparency electrodes also conformal in these raised designs, and reflecting electrode is positioned in these firstth districts at least.
In one embodiment of this invention, the photoresist layer more comprises a plurality of the 3rd openings, and wherein these the 3rd openings expose the protective layer that is positioned at these Second Regions, and these transparency electrodes see through these the 3rd openings and are connected with protective layer.
In one embodiment of this invention, reflecting electrode only is positioned in these firstth districts.
In one embodiment of this invention, the photoresist floor is positioned at these firstth districts and these Second Regions.
In one embodiment of this invention, these raised designs are positioned at these firstth districts and these Second Regions.
The another manufacture method that proposes a kind of active assembly array base plate of the present invention, it comprises the following steps.At first.One substrate is provided, and defines a plurality of the firstth district and a plurality of Second Region on substrate.Then, form a plurality of driving components on substrate, and these driving components are positioned at these the firstth districts, wherein each these driving component has a gate, an active layers, a drain and one source pole, and wherein active layers is electrically connected drain and source electrode.Then, form a protective layer that covers these driving components on substrate, and protective layer has a plurality of the first openings, wherein each these opening exposes respectively the drain of each corresponding these driving component.Afterwards; form one doped with the photoresist layer of a plurality of particulates on protective layer; to consist of a plurality of raised designs on the surface of photoresist layer, wherein the particle diameter of at least part of these particulates is greater than a thickness of photoresist layer, and these raised designs are positioned at these the firstth districts at least.Then, patterning photoresist layer, to form a plurality of the second openings, wherein these second openings expose these the first openings.Then, form a plurality of transparency electrodes on substrate, wherein each these transparency electrode sequentially is electrically connected with the drain of corresponding each these driving component by the second opening and the first opening, and it is conformal in these raised designs to cover these transparency electrodes of photoresist layer.Then, form a plurality of reflecting electrodes on these transparency electrodes of conformal these raised designs, and these reflecting electrodes are conformal in these raised designs.
In one embodiment of this invention, the method for patterning photoresist layer more is included in and forms a plurality of the 3rd openings in these Second Regions, and wherein these the 3rd openings expose the protective layer that is positioned at these Second Regions.[otherwise partly wearing the opening of penetrating region]
In one embodiment of this invention, the photoresist layer that forms doped with these particulates comprises method of spin coating or ink-jet method in the method for protective layer.
In one embodiment of this invention, these transparency electrodes and these reflecting electrodes are positioned at these firstth districts and these Second Regions, and these transparency electrodes and conformal these raised designs of these reflecting electrodes.
In one embodiment of this invention, the particle diameter of these particulates drops in fact between 0.1 μ m ~ 3 μ m.
In one embodiment of this invention, the particle diameter of these particulates drops in fact between 0.1 μ m ~ 1.5 μ m.
In one embodiment of this invention, these particulates of part contact and these raised designs of component part with protective layer.
In one embodiment of this invention, these particulates of part do not contact and these raised designs of component part with protective layer.
Embodiments of the invention have following one of them advantage.By with doped particles in photoresist; and will mix fine-grained photoresist through the mode of method of spin coating or ink-jet method and so on and coat the photoresist layer that has raised design on protective layer to form the surface, wherein at least part of diameter of particle is greater than the thickness of photoresist layer.Therefore, embodiments of the invention provide the method that forms raised design comparatively simple and easy, and can reduce the use of traditional light shield, and then reduce the burden of cost of manufacture.In addition, be formed with raised design on the surface due to the photoresist layer, and reflecting electrode is conformal in the raised design top, thereby can makes active assembly array base plate be applied on the display panels of semi-penetration semi-reflective or total-reflection type.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and coordinate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the partial cutaway diagram of the active assembly array base plate of one embodiment of the invention.
Fig. 2 A～Fig. 2 F is the processing flow figure of the active assembly array base plate of Fig. 1.
Fig. 3 is the partial cutaway diagram of the active assembly array base plate of another embodiment of the present invention.
Fig. 4 A～Fig. 4 B is the part processing flow figure of the active assembly array base plate of Fig. 3.
[primary clustering symbol description]
100,200: active assembly array base plate
110: substrate
120: driving component
121: the lock insulating barrier
122: gate
123: ohmic contact layer
124: active layers
126: drain
128: source electrode
130: protective layer
132: the first openings
140: the photoresist layer
141: raised design
142: the second openings
144: the three openings
150: particulate
160: transparency electrode
170: reflecting electrode
P1: the firstth district
P2: Second Region
H1: thickness
The S1 surface.
Embodiment
Fig. 1 is the partial cutaway diagram of the active assembly array base plate of one embodiment of the invention.Please refer to Fig. 1, the active assembly array base plate 100 of the present embodiment comprises a substrate 110, a plurality of driving component 120, a protective layer 130, a photoresist layer 140, a plurality of particulate 150, a plurality of transparency electrode 160 and a plurality of reflecting electrode 170.Substrate 110 defines a plurality of the first district P1 and a plurality of Second Region P2.Driving component 120 is disposed on substrate 110 and is positioned at these firstth districts P1.Each driving component 120 has a gate 122, an active layers 124, a drain 126 and one source pole 128, and wherein active layers 124 is electrically connected drain 126 and source electrode 128.In the present embodiment, the first district P1 arranges driving component 120, and Second Region P2 defines the zone that driving component does not arrange.Particularly, the active assembly array base plate 100 of the present embodiment is the structure that adopts the active assembly array base plate of total-reflection type, so each first district P1 and adjacent Second Region P2 define an image element structure, as shown in Figure 1.
In the present embodiment, substrate 110 can adopt general glass substrate or other suitable substrate, and driving component 120 is to illustrate as an example with end gate thin-film transistor structure, but not as limit.In other words, the driving component 120 of the present embodiment can also be to adopt top gate thin-film transistor structure or low-temperature polycrystalline silicon thin film transistor structure, and this partly looks closely user's demand and design and decides, and the present invention is not particularly limited.
Specifically, if driving component 120 adopts the end that illustrates as Fig. 1 during the gate thin-film transistor structure, gate 122 is disposed on substrate 110, and gate 122 covered by a lock insulating barrier 121, as shown in Figure 1.In addition, active layers 124 is disposed on lock insulating barrier 121, and disposes an ohmic contact layer 123 on active layers 124.Drain 126 is disposed on this ohmic contact layer 123 and with active layers 124 with source electrode 128 and is electrically connected, and the material of gate 122, drain 126 and source electrode 128 is for example to adopt metal material.In the present embodiment, gate 122 is normally defined the first metal layer, and drain 126 is normally defined the second metal level with source electrode 128, and the first metal layer adheres to different retes separately from the second metal level.Need to prove, if driving component 120 is when adopting top gate thin-film transistor structure or low-temperature polycrystalline silicon thin film transistor structure, above-mentioned structure is just can be relatively different, and this part is known the knowledgeable's possible variation of its structure as can be known usually in what know this area, just repeats no more at this.
In addition, photoresist layer 140 is disposed on protective layer 130, and has a thickness H1 and a plurality of the second opening 142, and wherein each these second opening 142 exposes each first opening 132, as shown in Figure 1.In addition, particulate 150 is disposed in photoresist layer 140 and in the surperficial S1 of photoresist layer 140 and upward consists of a plurality of raised designs 141, wherein these raised designs 141 are positioned at these firstth districts P1 at least, and the particle diameter of at least part of these particulates 150 is greater than the thickness H1 of photoresist layer, as shown in Figure 1.In the present embodiment, photoresist floor 140 can be to be positioned at the first district P1 and Second Region P2, thus, because of be mixed with particulate in these raised designs 141 that form on the surface of photoresist floor 140 also equally the status in the first district P1 and Second Region P2 in.
In the present embodiment, the particle diameter of above-mentioned particulate 150 is in fact to drop between 0.1 μ m ~ 3 μ m, preferably, the particle diameter of particulate 150 can also be to drop between 0.1 μ m ~ 1.5 μ m, relatively, the thickness H1 of photoresist layer 140 just can dwindle further, and makes the integral thickness of active assembly array base plate 100 can further obtain reduction.Specifically, therefore because particulate 150 is to be doped in photoresist layer 140, thereby can see through directly just when forming photoresist layer 140 that particulate 150 be suspended in wherein or the particle diameter of particulate 150 itself forms a plurality of raised designs 141 greater than the thickness H1 of photoresist layer 140 on the surface of photoresist layer 140.In the present embodiment, due to the particle diameter of at least part of these particulates 150 thickness H1 greater than photoresist layer 140, so part particulate 150 can contact with protective layer 130 and consists of as shown in Figure 1 raised design 141.In addition, the part particle diameter can not contact with protective layer 130 through being suspended in the mode of photoresist layer 140 less than the particulate 150 of the thickness H1 of photoresist layer 140, and consists of raised design 141 as shown in Figure 1.
In addition, reflecting electrode 170 is disposed at respectively on these transparency electrodes 160 also conformal in these raised designs 141, and reflecting electrode 170 is positioned on these firstth districts P1 at least.In the present embodiment, the structures that adopt the total-reflection type active assembly array base plate due to active assembly array base plate 100, therefore transparency electrode 160 and reflecting electrode 170 are to be positioned at the first district P1 and Second Region P2, and conformal these raised designs 141 of transparency electrode 160 and reflecting electrode 170, as shown in Figure 1.In other words, if the total-reflection type active assembly array base plate 100 of the present embodiment is organized immediately with liquid crystal layer (not illustrating) and colored optical filtering substrates (not illustrating), just can form a kind of total-reflection type display panels, its displaying principle can utilize outside light to provide light source carrying out the demonstration of image, and need not the traditional backlight module provide backlight.
In addition, the present embodiment also proposes a kind of method of producing above-mentioned total-reflection type active assembly array base plate 100, and its flow process is as shown in Fig. 2 A～Fig. 2 F, and wherein Fig. 2 A～Fig. 2 F is the processing flow figure of the active assembly array base plate of Fig. 1.Please refer to Fig. 2 A, at first, provide aforesaid base plate 110, and define aforesaid the first district P1 and Second Region P2 on substrate 110, wherein can be with reference to aforementioned about the material of substrate, in this superfluous words no longer.
Then, form aforesaid driving component 120 on substrate 110, and driving component 120 is positioned at the first district P1, as shown in Fig. 2 B.In the present embodiment, the mode of formation driving component 120 can be first to form aforementioned gate 122 on substrate 110.Then, form aforesaid lock insulating barrier 121 on substrate 110, to cover gate 122.Then, then form aforesaid active layers 124 in the top of gate 122.Afterwards, form drain 126 and source electrode 128 on active layers 124, and be electrically connected with active layers.So far roughly can complete a kind of making flow process of driving component 120.
Then, form the protective layer 130 of aforementioned covering driving component 120 on substrate 110, and protective layer 130 has a plurality of the first openings 132, wherein the first opening 132 exposes the drain 136 of corresponding driving component 130, as shown in Fig. 2 C.In the present embodiment, protective layer 130 can be to select the aforementioned material of mentioning, the method that forms the protective layer 130 with first opening 132 can select traditional micro image etching procedure to carry out patterning to protective layer 130.For example, can prior to forming a protective material layer (not illustrating) on substrate 110, can form just then the protective material layer is carried out micro image etching procedure the protective layer 130 that illustrates as Fig. 2 C.
Afterwards; form aforementioned photoresist layer 140 doped with a plurality of particulates 150 on protective layer 130; upward consist of a plurality of raised designs 141 with the surperficial S1 in photoresist layer 140; wherein the particle diameter of at least part of these particulates 150 is greater than the thickness H1 of photoresist layer 140; and these raised designs 141 are positioned at the first district P1 and Second Region P2, as shown in Fig. 2 D.In the present embodiment, the method for photoresist layer 140 on protective layer 130 that forms doped with particulate 150 is for example to adopt method of spin coating or ink-jet method.For example, can sneak into/mix a plurality of particulates not of uniform size 150 in photoresist, then recycle method of spin coating or ink-jet method and form photoresist layer 140 on protective layer 130.
Then, the aforesaid photoresist layer 140 of patterning to form a plurality of the second openings 142 that expose the first opening 132, illustrates as Fig. 2 E.In the present embodiment, the method for the aforesaid photoresist layer 140 of patterning is for example to select traditional exposure imaging processing procedure to carry out patterning to the photoresist layer 140 of Fig. 2 D, just so can form the second opening 142 that illustrates as Fig. 2 E.
Then, form aforesaid transparency electrode 160 on substrate 110, wherein each transparency electrode 160 sequentially is electrically connected with the drain 126 of corresponding each driving component 120 by the second opening 142 and the first opening 132, and the transparency electrode 160 that covers photoresist layer 140 is conformal in raised design 141, as shown in Fig. 2 F.In the present embodiment, transparency electrode 160 can be general pixel electrode, and transparency electrode 160 can be to select aforementioned mentioned material, just repeats no more at this.In addition, the method for formation transparency electrode 160 can be to adopt chemical deposition, vapour deposition method, sputtering method or other suitable method.
Then, form a plurality of reflecting electrodes 170 on the transparency electrode 160 of conformal raised design 141, and reflecting electrode 170 is similarly conformal in these raised designs 141, as shown in Figure 1.In the present embodiment, the material of reflecting electrode 170 can adopt the reflective metals of gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc etc. and so on.The mode that forms in addition reflecting electrode 170 can adopt chemical deposition, vapour deposition method, sputtering method or other suitable method, and suitably selects micro image etching procedure to carry out patterning to reflecting electrode 170, and this partly looks closely user's design and demand.So far, just roughly complete a kind of manufacture method of aforementioned active assembly array base plate 100.
Based on as can be known above-mentioned; the active assembly array base plate 100 of the present embodiment is mainly by particulate 150 is doped in photoresist; and the mode that sees through method of spin coating or ink-jet method and so on the photoresist that will be mixed with particulate 150 is coated on protective layer 150 and can be formed photoresist layer 140; wherein at least part of particulate 150 particle diameters greater than the thickness H1 of photoresist layer 140, form raised design 141 thereby can directly go up in the surperficial S1 of photoresist layer 140.Adopt half mode optical cover process or multiple tracks optical cover process to form the mode of raised design with respect to tradition, the method that the present embodiment provides is comparatively simple and easy, and can reduce the use of light shield, and then the burden of Cost reduction.In addition, be formed with raised design 141 on the surperficial S1 due to photoresist layer 140, so reflecting electrode 170 just can be conformal in raised design 141 tops, thereby can make active assembly array base plate 100 be applied on the total-reflection type display panels.
In addition, Fig. 3 is the partial cutaway diagram of the active assembly array base plate of another embodiment of the present invention.please refer to Fig. 3, the structural similarity of the active assembly array base plate 200 of the present embodiment is in the structure of the active assembly array base plate 100 of previous embodiment, difference both be in, the active assembly array base plate 200 of the present embodiment is the active assembly array base plate structure that adopts semi-penetration, semi-reflective, therefore aforesaid photoresist layer 140 more can include a plurality of the 3rd openings 144, wherein these the 3rd openings 144 expose the protective layer 130 that is positioned at these Second Regions P2, and these transparency electrodes 160 also can see through these the 3rd openings 144 and be connected with protective layer 130, as shown in Figure 3.Thus, the first district P1 of the present embodiment is except may be configured with aforesaid driving component 120, and the first district P1 also may be defined as the first viewing area (or being called the echo area); Relatively, be may be defined as the second viewing area (or being called penetrating region) by the Second Region P2 of the 3rd protective layer 130 that is positioned at these Second Regions P2 that opening 144 exposes.
Comparison diagram 1 can be learnt with the structure of Fig. 3 simultaneously, the active assembly array base plate 200 of the present embodiment is the concept that adopts aforementioned active assembly array base plate 100 equally, meaning is namely that aforesaid particulate 150 is mixed in photoresist layer 140, to form aforesaid raised design 141 on the surface of photoresist layer 140.In the present embodiment, raised design 141 only is formed on the first district P1 (the first viewing area or echo area), and reflecting electrode 170 also is disposed at the top of raised design 141, and conformal with it.Because the active assembly array base plate 200 of the present embodiment is a kind of structure of active assembly array base plate of semi-penetration, semi-reflective, if therefore active assembly array base plate 200 is organized immediately with liquid crystal layer (not illustrating) and colored optical filtering substrates (not illustrating), just can form a kind of semi-penetrating and semi-reflective liquid crystal display panel, light and backlight module that its displaying principle can utilize outside light to provide simultaneously provide backlight and carry out the demonstration of image.
Similarly, the present embodiment also provides a kind of method of making above-mentioned active assembly array base plate 200, wherein due to the structure of active assembly array base plate 200 and the structural similarity of active assembly array base plate, thus the present embodiment only just both the difference on processing flow describe.
At first; the active assembly array base plate 200 of the present embodiment first can adopt as Fig. 2 A～described flow process of Fig. 2 D; and after the step of completing Fig. 2 D; then; patterning photoresist layer 140; as shown in Fig. 4 A; wherein Fig. 4 A different from the making step of Fig. 2 E be in; the photoresist layer 140 of the present embodiment also forms a plurality of the 3rd openings 144 that expose protective layer 130 in Second Region P1 (or claiming the second viewing area, penetrating region) is upper simultaneously except forming a plurality of the second openings 142 that expose the first opening 132.In the present embodiment, the method for patterning photoresist layer 140 can with reference to the mentioned mode of figure 2E, just repeat no more at this.
Then, form aforesaid transparency electrode 160 on substrate 110, wherein transparency electrode 160 sees through the second opening 142 and the first opening 132 except meeting and being electrically connected with drain 126, also can see through the 3rd opening 144 and is connected with protective layer 130, as shown in Figure 4 B.In the present embodiment, the method for formation transparency electrode 160 can with reference to the illustrated mode of figure 2E, not repeat them here.
Then, cover aforesaid reflecting electrode 170 in the top of raised design 141, as shown in Figure 3.In the present embodiment, because reflecting electrode 170 only is positioned on these firstth districts P1, therefore the first district P1 just can be used as the echo area of active assembly array base plate 200.In addition, because reflecting electrode 170 is not disposed on Second Region P1, and only have transparency electrode 160 to be disposed on Second Region P1, therefore, Second Region P2 can be used as the penetrating region of active assembly array base plate 200.In the present embodiment, the mode that forms reflecting electrode 170 can first adopt chemical deposition, vapour deposition method, sputtering method or other suitably to carry out film forming, and then micro image etching procedure carries out patterning to reflecting electrode 170 selecting suitably, as shown in Figure 3.So far, just roughly complete a kind of manufacture method of aforementioned active assembly array base plate 100.
Based on as can be known above-mentioned, because active assembly array base plate 200 and active assembly array base plate 100 are to adopt identical concept and have advantages of that equally active assembly array base plate 100 is mentioned, just repeat no more at this.
In sum, embodiments of the invention can reach the one at least of following effect.At first; by with doped particles in photoresist; and will mix fine-grained photoresist through the mode of method of spin coating or ink-jet method and so on and coat the photoresist layer that has raised design on protective layer to form the surface, wherein at least part of diameter of particle is greater than the thickness of photoresist layer.Therefore, embodiments of the invention provide the method that forms raised design comparatively simple and easy, and can reduce the use of traditional light shield, and then reduce the burden of cost of manufacture.In addition, be formed with raised design on the surface due to the photoresist layer, and reflecting electrode is conformal in the raised design top, thereby can makes active assembly array base plate be applied on the display panels of semi-penetration semi-reflective or total-reflection type.
The above person of thought, it is only preferred embodiment of the present invention, when not limiting scope of the invention process with this, the simple equivalence of namely generally doing according to the present patent application the scope of the claims and invention description content changes and modifies, and all still remains within the scope of the patent.Arbitrary embodiment of the present invention or claim must not reached the disclosed whole purposes of the present invention or advantage or characteristics in addition.In addition, summary part and title are only the use of auxiliary patent document search, are not to limit interest field of the present invention.
Claims (2)
1. active assembly array base plate is characterized in that: comprising:
One substrate defines a plurality of the firstth district and a plurality of Second Region;
A plurality of driving components are disposed on this substrate and are positioned at those the firstth districts, and each those driving components have a gate, an active layers, a drain and one source pole, and wherein this active layers is electrically connected this drain and this source electrode;
One protective layer is disposed on this substrate and covers those driving components, and this protective layer has a plurality of the first openings, and wherein each those openings expose respectively this drain of each corresponding those driving components;
One photoresist layer is disposed on this protective layer, and has a thickness and a plurality of the second opening, and wherein each those second openings expose each those first openings;
A plurality of particulates are disposed in this photoresist layer and consist of a plurality of raised designs on the surfaces of this photoresist layer, and those raised designs are positioned at each those firstth districts at least, and the particle diameter of at least part of those particulates is greater than this thickness of this photoresist layer;
A plurality of transparency electrodes, be disposed on this substrate and cover this photoresist layer, and those transparency electrodes are conformal in those raised designs, and each those transparency electrodes sequentially see through this second opening and this first opening and are electrically connected with this drain of corresponding each those driving components; And
A plurality of reflecting electrodes are disposed at respectively on those transparency electrodes and conformal in those raised designs, and this reflecting electrode only is positioned in those firstth districts;
Wherein the particle diameter of those particulates is 0.1 μ m;
Described photoresist layer more comprises a plurality of the 3rd openings, and wherein those the 3rd openings expose this protective layer that is positioned at those Second Regions, and those transparency electrodes see through those the 3rd openings and are connected with this protective layer;
Wherein this reflecting electrode only is positioned in those firstth districts; Wherein those particulates of part do not contact and those raised designs of component part with this protective layer.
2. the manufacture method of an active assembly array base plate is characterized in that: comprising:
One substrate is provided, and defines a plurality of the firstth district and a plurality of Second Region on this substrate;
Form a plurality of driving components on this substrate, and those driving components are positioned at those the firstth districts, wherein each those driving components have a gate, an active layers, a drain and one source pole, and wherein this active layers is electrically connected this drain and this source electrode;
Form a protective layer and cover those driving components on this substrate, and this protective layer has a plurality of the first openings, wherein each those openings expose respectively this drain of each corresponding those driving components;
Form a photoresist layer on this protective layer, this photoresist layer is doped with a plurality of particulates, to consist of a plurality of raised designs on the surface of this photoresist layer, wherein the particle diameter of at least part of those particulates is greater than a thickness of this photoresist layer, and those raised designs only are positioned at those the firstth districts;
This photoresist layer of patterning, to form a plurality of the second openings, wherein those second openings expose those the first openings;
Form a plurality of transparency electrodes on this substrate, wherein each those transparency electrodes sequentially are electrically connected with this drain of corresponding each those driving components by this second opening and this first opening, and it is conformal in those raised designs to cover those transparency electrodes of this photoresist layer; And
Form a plurality of reflecting electrodes on those transparency electrodes of conformal those raised designs, and those reflecting electrodes are conformal in those raised designs;
Wherein the particle diameter of those particulates is 0.1 μ m;
Wherein the method for this photoresist layer of patterning more is included in and forms a plurality of the 3rd openings in those Second Regions, and wherein those the 3rd openings expose this protective layer that is positioned at those Second Regions;
Wherein those transparency electrodes see through those the 3rd openings and are connected with this protective layer; Wherein those particulates of part do not contact and those raised designs of component part with this protective layer;
Wherein form this photoresist layer doped with those particulates and comprise method of spin coating or ink-jet method in the method for this protective layer.
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| CN 201010604708 CN102142445B (en) | 2010-12-24 | 2010-12-24 | Array substrate of active component and production method thereof |
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| CN 201010604708 CN102142445B (en) | 2010-12-24 | 2010-12-24 | Array substrate of active component and production method thereof |
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| JP2000241831A (en) * | 1999-02-18 | 2000-09-08 | Advanced Display Inc | Reflection type liquid crystal display device and its production |
| US6882394B2 (en) * | 2002-05-30 | 2005-04-19 | Fujitsu-Display Technologies Corporation | Reflective liquid crystal display including a step of applying charged particles on the organic resin and film method of manufacturing |
| JP4818839B2 (en) * | 2006-07-19 | 2011-11-16 | 株式会社 日立ディスプレイズ | Liquid crystal display device and manufacturing method thereof |
| CN101728323A (en) * | 2008-10-13 | 2010-06-09 | 华映视讯（吴江）有限公司 | Pixel structure and manufacturing method thereof |
| CN101499414B (en) * | 2009-02-26 | 2010-11-03 | 华映光电股份有限公司 | Production method for asymmetric prominence and picture element structure |
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