CN102142406A - 具有混合蓄压器的、压力接触连通的功率半导体模块 - Google Patents
具有混合蓄压器的、压力接触连通的功率半导体模块 Download PDFInfo
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Abstract
一种具有混合蓄压器的、压力接触连通的功率半导体模块,具有至少一个基底、功率半导体器件、壳体和负载接头元件及具有压力元件的压力装置,基底在其面向功率半导体模块内部的第一主面上具有带负载电位的导电带。第一负载接头元件和至少一个另外的负载接头元件各自构成为具有传递压力区段和各自至少一个从该区段伸出的触脚的金属成型体,相应的传递压力区段近似平行于基底表面并与其相距开地布置,触脚从传递压力区段延伸至基底并与基底符合线路要求地接触连通。从压力元件向第一传递压力区段和/或在至少一个传递压力区段之间向另一个相邻传递压力区段的压力传递借助混合的弹性的塑料成型体构成,塑料成型体具有至少两个带有不同弹性常数的分区。
Description
技术领域
本发明描述的是一种压力接触结构(Druckkontaktausführung)的、用于布置在冷却部件上的功率半导体模块。例如由DE 19719703A1公知的功率半导体模块形成本发明的出发点。
背景技术
这种功率半导体模块按照普遍的现有技术一般由壳体组成,该壳体带有至少一个布置在该壳体内的电绝缘的基底,优选用于直接安装在冷却部件上。基底从它那方面由绝缘材料体组成,该绝缘材料体带有多个处于该该绝缘材料体上面的、彼此绝缘的、金属的导电带(Leiterbahn)并且带有处于该绝缘材料体上面并与这些导电带符合线路要求地连接的功率半导体器件。此外,公知的功率半导体模块具有用于外部负载和辅助接头的接头元件以及布置在内部的连接元件。用于符合线路要求地内部连接功率半导体模块的这些连接元件通常构成为引线接合部。
同样公知的是压力接触连通的功率半导体模块,如在DE 102006006423A1中所公开的那样。依据该文献的功率半导体模块具有压力接触结构,用于使功率半导体模块与冷却部件导热连接。在这种功率半导体模块内同样布置有至少一个带有功率半导体器件的基底。此外,功率半导体模块具有壳体和导向外部的负载和控制接头元件。基底,例如DCB(陶瓷覆铜板)基底,具有绝缘材料体,在该基底面向功率半导体模块内部的第一主面上布置有具有负载电位的导电带。
所公开的负载接头元件在这里各自构成为具有至少一个外部的接触装置、至少一个带状区段和从该带状区段伸出的触脚的金属成型体。相应的带状区段平行于基底表面并与该基底表面相距开地布置。触脚从带状区段延伸至基底并与该基底符合线路要求地接触连通。为了在各个负载接头元件之间进行电绝缘和传导压力,这些负载接头元件在各自的带状区段的区域内分别具有弹性的中间层。
最后,DE 102007003587A1公开了一种上述类型的功率半导体模块,其中,压力体布置在压力装置与不直接相邻的另一负载接头元件之间。在这种情况下,该压力体的一部分穿过与压力装置直接相邻的负载接头元件并因此将压力从压力装置直接施加到该另一负载接头元件的压力接收部位上。
发明内容
本发明的目的在于,提供一种同样是压力接触结构的功率半导体模块,其中,以简单的方式进一步改善将压力导入到所述至少一个负载接头元件上用于使至少一个负载接头元件与基底的导电带接触连通。
该目的依据本发明通过具有权利要求1特征的功率半导体模块得以实现。优选的实施方式在从属权利要求中予以说明。
本发明的思路从一种可以布置在冷却装置上的压力接触结构的功率半导体模块出发,该功率半导体模块具有至少一个基底、布置在该至少一个基底上面的功率半导体器件(例如具有反并联二极管的IGBT(绝缘栅双极型晶体管))、壳体和导向外部的负载和控制接头元件。基底自身为此具有绝缘材料体并且在该基底的面向功率半导体模块内部的第一主面上具有带负载电位的导电带。此外,基底优选还具有至少一个如下的导电带,该至少一个导电带具有用于控制功率半导体器件的控制电位。
功率半导体模块的第一负载接头元件和至少一个另外的负载接头元件各自构成为具有用于外部连接的接触装置、传递压力区段和至少一个从该传递压力区段伸出的触脚的金属成型体。相应的传递压力区段在这种情况下平行于基底表面并与该基底表面相距开地布置。从相应的传递压力区段伸出的至少一个触脚延伸至基底并在那里符合线路要求地构成负载接头元件的触点。优选地,触脚为此在基底上与所配属的、具有负载电位的导电带接触连通,可供选择地也直接与功率半导体器件接触连通。
压力装置为了在基底的方向上导入压力而具有压力元件,该压力元件优选构成为功率半导体模块的壳体部分。该压力元件将所产生的压力导入到负载接头元件面向该压力元件的传递压力区段上并且在这里导入到至少一个另外的负载接头元件的传递压力区段上。依据本发明,至少一个混合的(hybrid)、弹性的塑料成型体布置在该压力装置的内部。该塑料成型体优选平面地构成并且具有两个垂直于压力装置布置的主面。塑料成型体的优选的位置在这种情况下处于压力元件与负载接头元件的跟该压力元件相邻的传递压力区段之间。塑料成型体的另一优选的位置在这种情况下处于两个相邻的负载接头元件的传递压力区段之间。可能特别具有优点的是,同时选择两种构造形式。
依据本发明构成的、混合的塑料成型体在这种情况下是有弹性的,也就是说弹性地构成,其中,该塑料成型体具有不同弹性常数的至少两个分区,由此,弹力因此在沿塑料成型体主面的侧向伸展部的不同位置上是不同的。为此,具有优点的是,塑料成型体具有多个从第一主面向第二主面延伸的并且平行于其主面伸展的第二分区,与布置在这些第二分区之间的第一分区相比,这些第二分区具有更大的弹性常数。特别优选的是,所有第二分区在主面的俯视图中看都由相关的第一分区包围。
这种构造形式具有如下优点:压力装置的力有针对性地在为此需要的部位上以增强的方式导入,在这些部位上需要这种压力导入,由此,负载接头元件(即该负载接头元件的至少一个触脚),与基底(即导电带或者功率半导体器件)之间的各个导电连接的接触可靠性得以改善。为此,具有优点的当然是,使该第二分区基本上在压力方向上与相应的至少一个触脚对齐地布置。
附图说明
借助图1至3的实施例详细阐述本发明的解决方案。其中:
图1示出依据本发明的功率半导体模块的剖面图。
图2示出依据本发明的功率半导体模块的三维视图。
图3示出依据本发明的功率半导体模块的混合的、弹性的塑料成型体的两种类似构造形式。
具体实施方式
图1示出依据本发明的功率半导体模块1的剖面。该功率半导体模块具有壳体3,该壳体带有可以与冷却部件2连接的框架式壳体部分30。框架式壳体部分30在这种情况下包围至少一个基底5。该基底又具有绝缘材料体52,优选是绝缘陶瓷,如氧化铝或者亚硝酸铝。
在面向功率半导体模块1内部的第一主面上,基底5具有自身结构化的金属涂层。该优选构造为铜涂层的金属涂层的各个区段在这种情况下构成功率半导体模块1的导电带54。基底5的第二主面依据现有技术具有非结构化的铜涂层50。
在基底5的导电带54上布置有可控的和/或者不受控制的功率半导体器件60,例如像具有各自反并联的续流二极管的IGBT(insulatedgate bipolar transistor),或者MOS-FET(功率场效应晶体管)。这些功率半导体器件符合线路要求地例如借助于引线接合部62与其他导电带54连接。
所需的不同电位的负载接头元件40、42、44用于在功率半导体模块1的基底5上外部连接电力电子电路。为此,负载接头元件40、42、44构成为金属成型体,这些金属成型体具有各一个平行于基底表面的、传递压力的区段402、422、442。传递压力的区段402、422、442在这种情况下形成堆叠(Stapel),其中,各个负载接头元件40、42、44的这些区段各自相对于彼此电绝缘。
每个负载接头元件40、42、44都从相应的传递压力的区段402、422、442伸出一个触脚400、420、440,但优选的是,伸出多个触脚至基底5的符合线路要求地配属的导电带54。
用于使功率半导体模块1与冷却部件2热连接并且同时用于使负载接头元件40、42、44的触脚400、420、440与基底5的导电带54电接触连通的示意性示出的压力装置70除了负载接头元件的所介绍的传递压力的区段402、422、442之外,还具有用于形成压力的压力元件72。
该压力元件72依据现有技术可以实施为具有适当内置的金属芯和/或者其他加固结构的塑料成型体。同样优选的是,压力元件72同时充当功率半导体模块1的盖并因此充当壳体3的部分。
作为依据本发明的第一选择方案,在这里示出的是,在该压力元件72与该堆叠中第一负载接头元件40的传递压力区段402之间布置有塑料成型体80a,用于蓄压并且用于有针对性地将压力导入到传递压力区段402的分区上。该塑料成型体80a具有混合的结构,其中,有针对性的压力导入通过塑料成型体80a不同分区800a、802a的不同弹性常数构成。
作为依据本发明的第二选择方案,在这里示出的是,在第二负载接头元件42、44的两个相邻的、传递压力的区段422、442之间布置有这种塑料成型体80b。当然,同时在功率半导体模块1中使用两种选择方案同样符合本发明的思路。
在上述两种选择方案中,各自的塑料成型体80a/b具有多个从第一主面804a/b向第二主面806a/b延伸的并且平行于这些主面伸展的第二分区802a/b,与布置在这些第二分区之间的第一分区800a/b相比,这些第二分区具有更大的弹性常数。因此,在平行于基底5的面内形成压力的可变构造形式。特别具有优点的是,在第二分区800、802基本上在压力方向上与单个或者各个处于其下面的传递压力区段402、422、442的触脚400、420、440对齐地布置的时候,导入压力。
图2示出依据本发明的功率半导体模块1的三维视图。在这里示出框架式壳体部分30,该框架式壳体部分带有用于固定在冷却装置上的凹隙300并且带有不同极性的负载接头元件40、42、44,其中,在这里可以看到外部连接元件404、424、444。负载接头元件40、42、44的其他构成形式遵循对图1的说明。为交流电压接头的负载接头元件44在空间上和功能上还配有电流传感器32。此外示出功率半导体模块1的构成为螺旋弹簧的辅助接头元件48。
看不到的基底5在框架式壳体部分30内布置在其底侧上并且在这种情况下未借助于框架式壳体部分30的所示凹隙300内的固定元件压到冷却装置上。针对用于将基底与冷却装置导热地连接和用于导电地连接负载接头元件40、42、44触脚400、420、440的压力接触连通设置有未示出的压力元件72,该压力元件将压力传递到负载接头元件40、42、44的传递压力区段402、422、442上(参见图1)。该压力元件作为壳体的部分并且在这种情况下布置在框架式壳体部分30的凹隙内。
依据本发明,在压力元件与负载接头元件40、42、44的传递压力区段402、422、442之间设置有混合的、弹性的塑料成型体80,用于(在平行于基底的面上观察)可变地传递压力。塑料成型体的其他细节在图3中予以说明。
图3示出依据本发明的功率半导体模块1的混合的、弹性的塑料成型体80的两种构造形式。依据图3a的塑料成型体方形地构成并且具有带有第一弹性常数的第一分区800。分别从两个主面804、806之一的角度观察,由该第一分区800包围的是更大第二弹性常数的第二分区802。
塑料成型体的两个主面在未压缩的状态下平坦地构成,由此形成塑料成型体的恒定厚度。然而同样具有优点的是,在未压缩的状态下,不同分区具有不同的厚度,由此,主面不完全平坦地构成。然而优选的是,塑料成型体在相应分区内的厚度在未压缩状态下的波动不超过平均厚度±10%的最大值。
图3b示出混合的、弹性的塑料成型体80的另一种构造形式,该塑料成型体具有不同弹性常数的两个分区。塑料成型体80自身基本上也方形地构成并且在如下那些部位上(参见图2)具有凹隙,即,功率半导体模块内在这些部位上设置有辅助接头元件48。
所示的塑料成型体80在一定程度上具有带有第一弹性常数的基体,该基体构成第一分区800。该第一分区在这里的俯视图中仅完全包围一个一定程度上构成指状物的第二分区802,该第二分区具有更大的弹性常数。这种构造形式相对于多个局部较狭窄地界定的第二分区(依据图3a)具有能更加简单地制造的优点。相应的分区在这种情况下通过塑料成型体的体积从第一主面804向第二主面806延伸(亦参见图1)。
相应的塑料成型体80自身具有优点地由闭孔的泡沫塑料或者整体泡沫组成,该闭孔的泡沫塑料或者整体泡沫可以借助公知的方法以如下方式制造,即,使其弹性地构成并因此具有限定的弹性常数。为了构成不同的分区,可能具有优点的是构成具有不同密度和/或者不同孔大小的泡沫塑料或整体泡沫。由此,不同分区800、802获得其不同的弹性常数。
Claims (10)
1.压力接触结构的功率半导体模块(1),所述功率半导体模块具有至少一个基底(5)、布置在所述至少一个基底上面的功率半导体器件(60)、壳体(3)和导向外部的负载接头元件(40、42、44)并且具有压力装置(70),所述压力装置具有压力元件(72),其中,所述基底(5)在其面向所述功率半导体模块内部的第一主面上具有带负载电位的导电带(54),
其中,第一负载接头元件(40)和至少一个另外的负载接头元件(42、44)各自构成为具有传递压力区段(402、422、442)和各自至少一个从所述传递压力区段伸出的触脚(400、420、440)的金属成型体,相应的所述传递压力区段(402、422、442)近似平行于基底表面并与所述基底表面相距开地布置,并且所述触脚(400、420、440)从所述传递压力区段(402、422、442)延伸至所述基底(5)并与所述基底符合线路要求地接触连通,以及
其中,从所述压力元件(72)向第一所述传递压力区段(402)和/或者在至少一个传递压力区段(422)之间向另一个相邻的传递压力区段(442)的压力传递借助混合的、弹性的塑料成型体(80)构成,所述塑料成型体具有至少两个带有不同弹性常数的分区(800、802)。
2.按权利要求1所述的功率半导体模块(1),其中,
所述塑料成型体(80)在未压缩的状态下在所有分区(800、802)内都具有恒定的厚度并因此具有两个平行的主面(804、806)。
3.按权利要求1所述的功率半导体模块(1),其中,
所述塑料成型体(80)在所述未压缩的状态下在相应所述分区(800、802)内具有不同厚度并因此具有基本上平行的主面,所述不同厚度具有最大为平均厚度的±10%的波动。
4.按权利要求2或3所述的功率半导体模块(1),其中,
所述塑料成型体(80)具有多个从所述第一主面向第二主面(804、806)延伸的并且平行于所述主面伸展的第二分区(802),与布置在所述第二分区之间的第一分区(800)相比,所述第二分区具有更大的弹性常数。
5.按权利要求4所述的功率半导体模块(1),其中,
与所述第二分区(802)相比,所述第一分区(800)具有更小的弹性常数。
6.按权利要求4所述的功率半导体模块(1),其中,
所有第二分区(802)在主面(804、806)的俯视图中看都由第一分区(800)包围。
7.按权利要求1所述的功率半导体模块(1),其中,
第二分区(802)基本上在压力方向上与触脚(400、420、440)对齐地布置。
8.按权利要求1所述的功率半导体模块(1),其中,
所述塑料成型体(80)由闭孔的泡沫塑料或者整体泡沫组成。
9.按权利要求8所述的功率半导体模块(1),其中,
不同的所述弹性常数通过相应的所述分区(800、802)的所述泡沫塑料的不同密度构成。
10.按权利要求8所述的功率半导体模块(1),其中,
不同的所述弹性常数通过所述相应分区(800、802)的所述泡沫塑料的不同孔大小构成。
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