CN102136520A - Terahertz single-photon detector and detection method thereof - Google Patents
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- CN102136520A CN102136520A CN 201010600399 CN201010600399A CN102136520A CN 102136520 A CN102136520 A CN 102136520A CN 201010600399 CN201010600399 CN 201010600399 CN 201010600399 A CN201010600399 A CN 201010600399A CN 102136520 A CN102136520 A CN 102136520A
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Abstract
The invention relates to a terahertz single-photon detector and a detection method thereof. The terahertz single-photon detector comprises a semiconductor heterojunction, a detection electrode formed on the surface of the semiconductor heterojunction, a first quantum dot and a single-electronic gauge formed on the surface of the semiconductor heterojunction, wherein two-dimensional electron gas is formed on the surface of the semiconductor heterojunction; the detection electrode is used for collecting terahertz single photons; the terahertz single photons collected by the detection electrode are used for triggering the first quantum dot to carry unit positive charges; the single-electronic gauge is used for measuring the charge change of a static environment at the periphery of the single-electronic gauge, and is in capacitive coupling with the first quantum dot; and current in the single-electronic gauge is hopped by the unit positive charges carried by the first quantum dot. The terahertz single-photon detector can be used for detecting weak terahertz radiation and counting the terahertz single photons.
Description
Technical field
The present invention relates to a kind of Terahertz single-photon detector and detection method thereof, relate in particular to a kind of Terahertz single-photon detector and detection method thereof that utilizes semiconductor-quantum-point to form.
Background technology
Terahertz (THz, 1THz=10
12Hz) wave band typically refers to frequency from 100GHz to 10THz, and corresponding wavelength is from 3 millimeters to 30 microns, the quite wide electromagnetic spectrum zone of spectral range between millimeter wave (submillimeter wave) and infrared light.The corresponding energy range of Terahertz photon is that 0.14meV is to 41.4meV, the low-frequency vibration of this energy and molecule and material and rotational energy scope are complementary, these determined THz wave in electromagnetic spectrum specific position and in propagation, scattering, reflection, aspect and millimeter wave, significantly different characteristics and application of infrared ray such as absorb, penetrate.Terahertz Technology for people to the sign of material with control the free space that provides very big, and handle at high spatial and temporal resolution detection, imaging and signal processing, the quantum information of message area, there is the major application prospect in fields such as big capacity and high secure communication, radio astronomy detection, atmosphere and environmental monitoring, real-time and safe biology and medical diagnosis.But for a long time,, cause the electromagnetic wave of Terahertz frequency range to be studied fully and use, be called as " Terahertz space " in the electromagnetic spectrum owing to lack effective Terahertz source and detection method.
When the development and utilization terahertz wave band, the detection of terahertz signal has very important meaning.In the Terahertz frequency range following three kinds of main detection modes are arranged at present:
(1) utilize the nonlinear effect of electrooptic crystal to carry out difference detecting, that this kind mode has is highly sensitive, can survey THz radiation intensity and phase place simultaneously, but this detection only can match with specific terahertz emission producing method, and volume is bigger, difficult integrated with semiconductor device circuit, have significant limitation.
(2) pyroelectric detector, this class detector is lower in Terahertz frequency range responsiveness, perhaps need work under liquid helium temperature, and low-response, and do not have spectral resolving power can't be applied to the online detection of Terahertz field such as communicate by letter with Terahertz.
(3) photon type detector such as the Terahertz quantum well detector, have the characteristics such as spectral resolving power that response speed is fast, detectivity is high and stronger, but dark current is bigger, can't survey faint terahertz emission.
More than three types terahertz detector substantially do not have the single photon precision at present, can't realize that the sensitivity of the atomic weak terahertz light of object radiation is surveyed.On the other hand, present single-photon detector is generally operational in X ray, ultraviolet light, visible light and near infrared spectrum zone, it is a kind of indispensable powerful measure of surveying faint electromagnetic radiation, main device has photomultiplier and avalanche photodide, but the operation principle of these devices has determined its operating frequency to be difficult to drop to the Terahertz zone.
Summary of the invention
The object of the present invention is to provide a kind of easily and the Terahertz single-photon detector that detection circuit is integrated and noise equivalent power is low, detectivity is high.
Another object of the present invention is to provide a kind of detection method of above-mentioned Terahertz single-photon detector.
A kind of Terahertz single-photon detector comprises: heterojunction semiconductor, and described heterojunction semiconductor surface is formed with two-dimensional electron gas; Be formed at the exploring electrode on described heterojunction semiconductor surface, be used to collect the Terahertz single photon; First quantum dot, the described first quantum dot tape unit positive charge of Terahertz one-photon excitation that described exploring electrode is collected; Be formed at the single electron measuring instrument on described heterojunction semiconductor surface, be used to measure the change in electrical charge of static environment on every side of described single electron measuring instrument, described single electron measuring instrument and the described first quantum dot capacitive couplings, the unit positive charge of the described first quantum dot band causes the electric current generation saltus step in the described single electron measuring instrument.
The preferred a kind of technical scheme of Terahertz single-photon detector of the present invention, described single electron measuring instrument is a single-electronic transistor.
The preferred a kind of technical scheme of Terahertz single-photon detector of the present invention, described exploring electrode is bow tie.
The preferred a kind of technical scheme of Terahertz single-photon detector of the present invention, described single electron measuring instrument comprises: the gate electrode, first electrode, second electrode and second quantum dot that are formed at described heterojunction semiconductor surface, described gate electrode is arranged between described exploring electrode and described second electrode, described first quantum dot is formed at the zone between the end of the end of described gate electrode and described exploring electrode, and described second quantum dot is formed at the zone between the end of the end of the end of described gate electrode, described first electrode, described second electrode.
The preferred a kind of technical scheme of Terahertz single-photon detector of the present invention, described exploring electrode comprises two exploring electrode unit, described gate electrode comprises two gate electrode unit, one side of described gate electrode unit is parallel with adjoining one side of described exploring electrode unit, and described first quantum dot is formed at the zone between the gathering end of described gate electrode unit and described exploring electrode unit.
The preferred a kind of technical scheme of Terahertz single-photon detector of the present invention, described second electrode is vertical with described gate electrode, described first electrode comprises two first electrode units, described first electrode unit is symmetricly set in the both sides of described second electrode, and described second quantum dot is formed at the zone between the gathering end of described gate electrode unit, described first electrode unit, described second electrode.
A kind of detection method of above-mentioned Terahertz single-photon detector comprises the steps: described exploring electrode collection Terahertz single photon; The described first quantum dot tape unit positive charge of Terahertz one-photon excitation that described exploring electrode is collected; Described unit positive charge causes the electric current generation saltus step in the described single electron measuring instrument; Thereby the time series of analyzing the electric current in the described single electron measuring instrument is counted the Terahertz single photon that described exploring electrode detects.
Preferred a kind of technical scheme of the detection method of Terahertz single-photon detector of the present invention, described single electron measuring instrument comprises the gate electrode that is formed at described heterojunction semiconductor surface, described first quantum dot is formed at the zone between the end of the end of described gate electrode and described exploring electrode, and the size of described first quantum dot is determined by the shape of described exploring electrode and the bias voltage that is added on the described gate electrode.
Preferred a kind of technical scheme of the detection method of Terahertz single-photon detector of the present invention, described single electron measuring instrument comprises the gate electrode that is formed at described heterojunction semiconductor surface, first electrode, second electrode and second quantum dot, described gate electrode is formed between described exploring electrode and described second electrode, described second quantum dot is formed at the end of described gate electrode, the end of described first electrode, zone between the end of described second electrode, adjust the shape of described second electrode and the voltage on described second electrode so that adjust described first quantum dot and described single electron measuring instrument between capacitive couplings intensity.
Preferred a kind of technical scheme of the detection method of Terahertz single-photon detector of the present invention, the voltage of adjusting on described second electrode is adjusted the gap size between the bound level in described second quantum dot.
Compared with prior art, Terahertz single-photon detector of the present invention utilizes semiconductor-quantum-point to survey the Terahertz single photon, make quantum dot and other elements by dull and stereotyped semiconductor technology, control the pattern of quantum dot easily, having compact conformation, the easy and integrated characteristics of detection circuit, is the key that realizes Terahertz material micro imaging system chipization.Be capacitive couplings between first quantum dot among the present invention and the single electron measuring instrument, Terahertz photon of every absorption just can drive a large amount of electronics, thereby compare with other photon type detectors and to have extremely low noise equivalent power and the detectivity of Geng Gao, the easier requirement of satisfying Terahertz micro imaging system chipization.
Description of drawings
Fig. 1 is the structural representation of Terahertz single-photon detector of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, Fig. 1 is the structural representation of Terahertz single-photon detector of the present invention.Described Terahertz single-photon detector comprises heterojunction semiconductor (figure does not show), be formed at the two-dimensional electron gas (figure does not show) on described heterojunction semiconductor surface, the single electron measuring instrument (not indicating) that is formed at exploring electrode 1, the first quantum dot 2 on described heterojunction semiconductor surface and is formed at described heterojunction semiconductor surface.Preferably, the material of described heterojunction semiconductor is GaAs or AlGaAs.The described heterojunction semiconductor of the described two-dimensional electron gas distance about 1-100nm in surface.In described two-dimensional electron gas, electron mobility is approximately 5 * 10
5Cm
2V
-1s
-1, electron density is 1 * 10
11Cm
-2Described exploring electrode 1 is bow tie.Described exploring electrode 1 is dull and stereotyped dipole antenna, is used to collect the Terahertz single photon.Described first quantum dot of the Terahertz one-photon excitation 2 tape unit positive charges that described exploring electrode 1 is collected.
Described single electron measuring instrument is used to measure the change in electrical charge of static environment on every side of described single electron measuring instrument.The unit positive charge of described first quantum dot, 2 bands causes the electric current generation saltus step in the described single electron measuring instrument.Described single electron measuring instrument comprises gate electrode 3, first electrode 5, second electrode 6 and second quantum dot 4 that is formed at described heterojunction semiconductor surface.There is not electron exchange between described single electron measuring instrument and described first quantum dot 2, capacitive couplings between described single electron measuring instrument and described first quantum dot 2.Adjust the shape of described second electrode 6 and the voltage on described second electrode 6 and can adjust capacitive couplings intensity between described first quantum dot 2 and the described single electron measuring instrument.
Described gate electrode 3 is arranged between described exploring electrode 1 and described second electrode 6.Described first quantum dot 2 is formed at the zone between the end of the end of described gate electrode 3 and described exploring electrode 1.Described second quantum dot 4 is formed at the zone between the end of the end of the end of described gate electrode 3, described first electrode 5, described second electrode 6.Described gate electrode 3 is used to make between described first quantum dot 2 and described second quantum dot 4 does not have electron exchange, guarantees that both are capacitive couplings.Can adjust the gap size between the bound level in described second quantum dot 4 by the voltage of adjusting on described second electrode 6.
Concrete, described gate electrode 3 comprises two gate electrode unit, described exploring electrode 1 comprises two symmetrically arranged exploring electrode unit.One side of described gate electrode unit is parallel with adjoining one side of described exploring electrode unit.Described first quantum dot 2 is formed at the zone between the gathering end of described gate electrode unit and described exploring electrode unit.The size of described first quantum dot 2 is determined by the shape of described exploring electrode 1 and the back bias voltage voltage that is added on the described gate electrode 2.The size of described first quantum dot 2 generally will be much smaller than the Terahertz wavelength that will survey.Described second electrode 6 is vertical with described gate electrode 3.Described first electrode 5 comprises two first electrode units, described first electrode unit is symmetricly set in the both sides of described second electrode 6, and described second quantum dot 4 is formed at the zone between the gathering end of described gate electrode unit, described first electrode unit, described second electrode 6.
The detection method of Terahertz single-photon detector of the present invention is as follows:
Described exploring electrode 1 is collected outside faint Terahertz single photon.
The Terahertz single photon that described exploring electrode 1 is collected makes a electron tunneling in described first quantum dot 2 in electronic library on every side by the excitation of plasma effect.Owing to lost an electronics, described first quantum dot 2 is just with the positive charge (being the hole) of a last unit charge e.So the hole in electronics in the electronic library and described first quantum dot 2 is that potential barrier intercepts, therefore this electron-hole pair has very long recombination lifetime τ.
Very responsive to the variation of static environment on every side with the described single electron measuring instrument of described first quantum dot, 2 capacitive couplings, the electric current that a hole in described first quantum dot 2 that the Terahertz one-photon excitation goes out will cause flowing through described single electron measuring instrument changes Δ I
ePhoton of described first quantum dot, 2 every absorptions just will drive average τ Δ I
e/ e electronics flows through described single electron measuring instrument, thereby causes the electric current generation saltus step in the described single electron measuring instrument.Therefore, Terahertz single-photon detector of the present invention has very low noise equivalent power, promptly higher detectivity.
Measure the electric current (or electricity is led) in the described single electron measuring instrument by measuring circuit (figure does not show), thereby the time series of analyzing the electric current in the described single electron measuring instrument is counted to the Terahertz single photon that described exploring electrode detects.Concrete, lead by electric current or electricity that measuring circuit is measured in first electrode 5 in the described single electron measuring instrument.
Compared with prior art, Terahertz single-photon detector of the present invention utilizes semiconductor-quantum-point to survey the Terahertz single photon, make quantum dot and other elements by dull and stereotyped semiconductor technology, control the pattern of quantum dot easily, having compact conformation, the easy and integrated characteristics of detection circuit, is the key that realizes Terahertz material micro imaging system chipization.Between first quantum dot 2 among the present invention and the single electron measuring instrument is capacitive couplings, Terahertz photon of every absorption just can drive a large amount of electronics, thereby compare with other photon type detectors and to have extremely low noise equivalent power and the detectivity of Geng Gao, the easier requirement of satisfying Terahertz micro imaging system chipization.In far infrared, terahertz wave band especially, the faint radiation detection technology that has the superelevation spatial resolution are the most important condition that realizes material micro-imaging, biological cell or major application such as molecular imaging, astrosurveillance.Therefore, make full use of the modern semiconductors technology, develop and to survey being easy to the integrated Terahertz single photon counting detector of detection circuit and will promoting the extensive use of Terahertz micro-imaging greatly of faint terahertz emission.
The single electron measuring instrument of Terahertz single-photon detector of the present invention comprises gate electrode 3, first electrode 5, second electrode 6 and second quantum dot 4 that is formed at described heterojunction semiconductor surface.Described single electron measuring instrument can also be made into quantum point contact construction or single-electronic transistor, and it is described to be not limited to above-mentioned execution mode.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.
Claims (10)
1. a Terahertz single-photon detector is characterized in that, comprising:
Heterojunction semiconductor, described heterojunction semiconductor surface is formed with two-dimensional electron gas;
Be formed at the exploring electrode on described heterojunction semiconductor surface, be used to collect the Terahertz single photon;
First quantum dot, the described first quantum dot tape unit positive charge of Terahertz one-photon excitation that described exploring electrode is collected;
Be formed at the single electron measuring instrument on described heterojunction semiconductor surface, be used to measure the change in electrical charge of static environment on every side of described single electron measuring instrument, described single electron measuring instrument and the described first quantum dot capacitive couplings, the unit positive charge of the described first quantum dot band causes the electric current generation saltus step in the described single electron measuring instrument.
2. Terahertz single-photon detector as claimed in claim 1 is characterized in that, described single electron measuring instrument is a single-electronic transistor.
3. Terahertz single-photon detector as claimed in claim 1 is characterized in that described exploring electrode is bow tie.
4. Terahertz single-photon detector as claimed in claim 1, it is characterized in that, described single electron measuring instrument comprises: the gate electrode, first electrode, second electrode and second quantum dot that are formed at described heterojunction semiconductor surface, described gate electrode is arranged between described exploring electrode and described second electrode, described first quantum dot is formed at the zone between the end of the end of described gate electrode and described exploring electrode, and described second quantum dot is formed at the zone between the end of the end of the end of described gate electrode, described first electrode, described second electrode.
5. Terahertz single-photon detector as claimed in claim 4, it is characterized in that, described exploring electrode comprises two exploring electrode unit, described gate electrode comprises two gate electrode unit, one side of described gate electrode unit is parallel with adjoining one side of described exploring electrode unit, and described first quantum dot is formed at the zone between the gathering end of described gate electrode unit and described exploring electrode unit.
6. Terahertz single-photon detector as claimed in claim 5, it is characterized in that, described second electrode is vertical with described gate electrode, described first electrode comprises two first electrode units, described first electrode unit is symmetricly set in the both sides of described second electrode, and described second quantum dot is formed at the zone between the gathering end of described gate electrode unit, described first electrode unit, described second electrode.
7. the detection method of a Terahertz single-photon detector as claimed in claim 1 is characterized in that, comprises the steps:
Described exploring electrode is collected the Terahertz single photon;
The described first quantum dot tape unit positive charge of Terahertz one-photon excitation that described exploring electrode is collected;
Described unit positive charge causes the electric current generation saltus step in the described single electron measuring instrument;
Thereby the time series of analyzing the electric current in the described single electron measuring instrument is counted the Terahertz single photon that described exploring electrode detects.
8. the detection method of Terahertz single-photon detector as claimed in claim 7, it is characterized in that, described single electron measuring instrument comprises the gate electrode that is formed at described heterojunction semiconductor surface, described first quantum dot is formed at the zone between the end of the end of described gate electrode and described exploring electrode, and the size of described first quantum dot is determined by the shape of described exploring electrode and the bias voltage that is added on the described gate electrode.
9. the detection method of Terahertz single-photon detector as claimed in claim 7, it is characterized in that, described single electron measuring instrument comprises the gate electrode that is formed at described heterojunction semiconductor surface, first electrode, second electrode and second quantum dot, described gate electrode is arranged between described exploring electrode and described second electrode, described second quantum dot is formed at the end of described gate electrode, the end of described first electrode, zone between the end of described second electrode, adjust the shape of described second electrode and the voltage on described second electrode so that adjust described first quantum dot and described single electron measuring instrument between capacitive couplings intensity.
10. the detection method of Terahertz single-photon detector as claimed in claim 9 is characterized in that, the voltage of adjusting on described second electrode is adjusted the gap size between the bound level in described second quantum dot.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN104979420A (en) * | 2014-04-02 | 2015-10-14 | 中国人民解放军军械工程学院 | Quantum dot field effect single-photon detector based on microcavity |
| CN106374323A (en) * | 2016-11-25 | 2017-02-01 | 中国科学院上海技术物理研究所 | Laser up-conversion terahertz difference frequency source detecting system |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108123003A (en) * | 2017-12-07 | 2018-06-05 | 上海电机学院 | A kind of method that three quantum-dot structure of semiconductor realizes mid and far infrared single photon detection |
| CN110687358A (en) * | 2019-10-14 | 2020-01-14 | 云南师范大学 | Capacitive electromagnetic wave detector and system based on thermoelectric material |
| CN112985596A (en) * | 2021-01-26 | 2021-06-18 | 济南量子技术研究院 | 10.6 mu m single photon detector based on frequency up-conversion and performance test experimental device thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010107832A1 (en) * | 2009-03-17 | 2010-09-23 | Bracco Imaging Spa | Lhrh-ii peptide analogs |
-
2010
- 2010-12-21 CN CN201010600399A patent/CN102136520B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010107832A1 (en) * | 2009-03-17 | 2010-09-23 | Bracco Imaging Spa | Lhrh-ii peptide analogs |
Non-Patent Citations (1)
| Title |
|---|
| 《Applied Physics Letters》 20100225 D.F.Santavicca,B.Reulet,et al. Energy resolution of terahertz single-photon-sensitive bolometric detectors 全文 1-10 , 第96期 2 * |
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| CN104979420A (en) * | 2014-04-02 | 2015-10-14 | 中国人民解放军军械工程学院 | Quantum dot field effect single-photon detector based on microcavity |
| CN104979420B (en) * | 2014-04-02 | 2017-11-14 | 中国人民解放军军械工程学院 | A kind of quantum dot field-effect single-photon detector based on microcavity |
| CN104596641A (en) * | 2015-01-21 | 2015-05-06 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN104596641B (en) * | 2015-01-21 | 2017-03-08 | 中国科学院半导体研究所 | Terahertz wave detector |
| CN106374323A (en) * | 2016-11-25 | 2017-02-01 | 中国科学院上海技术物理研究所 | Laser up-conversion terahertz difference frequency source detecting system |
| CN106374323B (en) * | 2016-11-25 | 2023-05-05 | 中国科学院上海技术物理研究所 | Laser up-conversion terahertz difference frequency source detection system |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108123003A (en) * | 2017-12-07 | 2018-06-05 | 上海电机学院 | A kind of method that three quantum-dot structure of semiconductor realizes mid and far infrared single photon detection |
| CN108123003B (en) * | 2017-12-07 | 2019-12-31 | 上海电机学院 | Method for realizing middle and far infrared single photon detection by semiconductor three-quantum dot structure |
| CN110687358A (en) * | 2019-10-14 | 2020-01-14 | 云南师范大学 | Capacitive electromagnetic wave detector and system based on thermoelectric material |
| CN112985596A (en) * | 2021-01-26 | 2021-06-18 | 济南量子技术研究院 | 10.6 mu m single photon detector based on frequency up-conversion and performance test experimental device thereof |
| CN112985596B (en) * | 2021-01-26 | 2022-12-23 | 济南量子技术研究院 | 10.6 mu m single photon detector based on frequency up-conversion and performance test experimental device thereof |
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