CN102136414A - Gallium nitride semiconductor element and light-emitting diode - Google Patents
Gallium nitride semiconductor element and light-emitting diode Download PDFInfo
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- CN102136414A CN102136414A CN201110038044XA CN201110038044A CN102136414A CN 102136414 A CN102136414 A CN 102136414A CN 201110038044X A CN201110038044X A CN 201110038044XA CN 201110038044 A CN201110038044 A CN 201110038044A CN 102136414 A CN102136414 A CN 102136414A
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Abstract
The invention discloses a gallium nitride semiconductor element and a light-emitting diode. A nitride film rich in metal is arranged on a substrate; and then a cushion layer and a semiconductor lamination layer are arranged on the nitride film rich in metals, wherein the nitride film rich in metals only covers partial upper surface of the substrate. In the invention, the extension growing direction of the cushion layer is converted from upward growing to horizontal growing through the amorphous structure characteristic of the nitride film rich in metals, so that the dislocation of crystal lattices in the cushion layer also bend towards the extension growing direction; therefore, the probability for the dislocation to extend to the semiconductor lamination layer is reduced so as to improve the reliability of the gallium nitride semiconductor element.
Description
The application be that April 16, application number in 2008 are 200810092628.3 the applying date, denomination of invention divides an application for the application for a patent for invention of " gallium nitride semiconductor component and light-emitting diode ".
Technical field
The invention provides a kind of gallium nitride semiconductor component and light-emitting diode, the structure of the nitride film of metal with the extension quality of increase semiconductor element is rich in particularly a kind of utilization.
Background technology
In recent years, semi-conducting material is widely used in electronic component, integrated circuit and solid-state illumination field etc.; Yet, as shown in Figure 1, semiconductor element 100 causes semi-conducting material the lattice dislocation to take place and the situation of generation dislocation (dislocation) 14 in epitaxial process often easily because the lattice constant (lattice constant) of substrate 10 and semiconductor laminated 12 does not match; This lattice defect influences the electrical properties of semi-conducting material easily, reduces the stability of semiconductor element.
In order to address the above problem, as shown in Figure 2, known technology adds the resilient coating 22 that a lattice constant and substrate comparatively mate mostly on the substrate 20 of semiconductor element 200, the situation that reduces the lattice dislocation thus takes place, and extends to semiconductor laminated 26 yet still have partial dislocation 24.
In addition, as shown in Figure 3A, also there is known technology on substrate 30, to form buffer body (buffer body) 32, and subsequently shown in Fig. 3 B, the resilient coating 34 of on substrate 30 and buffer body 32, growing up; Wherein, the material of buffer body 32 is selected from silicon dioxide (SiO
2) or silicon nitride (SiNx), cushioning layer material is a semi-conducting material.Because above-mentioned silicon dioxide and silicon nitride is non crystalline structure, semi-conducting material can't be on above-mentioned material epitaxial growth, therefore, resilient coating 34 is shown in the direction of the arrow a of Fig. 3 A, begin to grow up by substrate 30 surfaces that do not cover buffer body 32, the thickness for the treatment of resilient coating 34 during greater than the height of buffer body 32 resilient coating 34 can transfer horizontal extension to, make dislocation bending in resilient coating 34 lattices, and then reduce the probability that dislocation extends upwardly to the semiconductor laminated structure 36 on the resilient coating 34.
Take place though above-mentioned prior art all can reduce the lattice defect of epitaxial structure, yet still have the minority dislocation to extend upward, and then influence the electrical properties and the reliability of semiconductor element; In order to address the above problem, the present invention just proposes a kind of gallium nitride semiconductor structures, to improve the extension quality of gallium nitride semiconductor.
Summary of the invention
Purpose of the present invention is for a gallium nitride semiconductor structures with the nitride film that is rich in metal is provided, in order to improve the extension quality of gallium nitride semiconductor.
Another object of the present invention takes place for a gallium nitride semiconductor structures with the nitride film that is rich in metal being provided, utilizing the nitride film that is rich in metal to reduce the semiconductor epitaxial dislocation, improves the reliability of semiconductor element thus.
A further object of the present invention reduces the wrong upwardly extending situation of luminous lamination meta for a light emitting diode construction with the nitride film that is rich in metal is provided by the nitride film that is rich in metal, improves the luminous efficiency of light-emitting diode thus.
According to the present invention, a kind of gallium nitride semiconductor component is provided, comprise at least: a substrate; One is rich in the nitride film of metal, is positioned on this substrate; One first resilient coating is positioned on this nitride film that is rich in metal; And the semiconductor lamination, be positioned on this resilient coating, wherein this nitride film that is rich in metal only covers the part upper surface of this substrate.
Description of drawings
Fig. 1 is a known semiconductor component structure schematic diagram.
Fig. 2 is another known semiconductor component structure schematic diagram.
Fig. 3 A to Fig. 3 B is another known semiconductor component structure schematic diagram.
Fig. 4 A to Fig. 4 C is the schematic flow sheet of the embodiment of the invention.
Fig. 4 D is the structural representation of another embodiment of the present invention.
Fig. 5 A is known semiconductor component surfaces enlarged drawing with silicon nitride buffer body.
Fig. 5 B is the surperficial enlarged drawing of the embodiment of the invention.
Fig. 6 A is the structural representation of further embodiment of this invention.
Fig. 6 B is the structural representation of yet another embodiment of the invention.
Description of reference numerals
100 semiconductor elements, 10 substrates
12 semiconductor laminated 14 dislocations
200 semiconductor elements, 20 substrates
22 resilient coatings, 24 dislocations
26 semiconductor laminated 30 substrates
32 buffer bodies, 34 resilient coatings
36 semiconductor laminated 40 substrates
42 are rich in nitride film 44 first resilient coatings of metal
46 semiconductor laminated 460 first conductive-type semiconductor layers
462 active layers, 464 second conductive-type semiconductor layers
48 second resilient coatings, 400 gallium nitride semiconductor components
600 light-emitting diodes, 60 substrates
62 are rich in nitride film 64 first resilient coatings of metal
66 luminous lamination 660 first conductive-type semiconductor layers
662 luminescent layers, 664 second conductive-type semiconductor layers
68 first electrodes, 70 second electrodes
72 second resilient coatings
Embodiment
The present invention discloses a kind of gallium nitride semiconductor.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Fig. 4 A to Fig. 6 B.
Fig. 4 A to Fig. 4 C is a kind of manufacturing process schematic diagram of gallium nitride semiconductor component 400.Shown in Fig. 4 A, a substrate 40 is provided, the material of this substrate 40 can be sapphire (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), metal or transparent material etc.; Then utilize known chemical vapour deposition technique (CVD) to feed Cp2Mg, SiH
4With NH
3Gas one is rich in the nitride film 42 of metal on this substrate 40 to grow up; The nitride film 42 that wherein is rich in metal is covered substrate 40 fully, and coverage rate is approximately less than 60%, and preferably, the nitride film that is rich in metal is a discontinuous membrane structure, for example forms a plurality of blocks or archipelago shape structure.
In addition, this material that is rich in the nitride film 42 of metal is selected from magnesium nitride silicon (MgSiN), zinc nitride silicon (ZnSiN), magnesium nitride germanium (MgGeN) and zinc nitride germanium (ZnGeN) series material etc., and wherein metal ingredient is more than the twice of nonmetal composition.
Subsequently, shown in Fig. 4 B, utilize chemical vapour deposition technique again, form one first resilient coating 44 on substrate 40 and the nitride film 42 that is rich in metal, wherein, the material of first resilient coating 44 is gallium nitride or aluminium nitride; Be amorphous (amorphous) structure owing to be rich in the nitride film 42 of metal, semi-conducting material can't be on the nitride film 42 that is rich in metal epitaxial growth, therefore, the growth direction of first resilient coating 44 is shown in the arrow b among the 4B figure, upwards grow up on the substrate 40 by nitride film 42 coverings of not being rich in metal, after treating the thickness of thickness greater than the nitride film 42 that is rich in metal of first resilient coating 44, first resilient coating 44 begins to transfer to the horizontal direction epitaxial growth, does not simultaneously match the dislocation that produces also along with the direction of first resilient coating, 44 epitaxial growths is extended by changing into vertically upward to horizontal direction because of lattice constant in first resilient coating 44.On first resilient coating 44, form semiconductor lamination 46 afterwards again, to form a gallium nitride semiconductor component 400, wherein semiconductor laminated 46 material is a gallium nitride series material, in addition, semiconductor laminated 46 from bottom to top comprise one first conductive-type semiconductor layer 460, an active layer 462 and one second conductive-type semiconductor layer 464 at least.
In addition, also can be shown in Fig. 4 D, on substrate 40, utilize chemical vapour deposition technique growth one second resilient coating 48 earlier, its material is gallium nitride or aluminium nitride, on second resilient coating 48, form a nitride film 42 that is rich in metal again, this nitride film 42 that is rich in metal is the upper surface of cover part second resilient coating 48 only, subsequently, on the nitride film 42 that is rich in metal and second resilient coating 46, form one first resilient coating 44 again, strengthen stoping the upwardly extending effect of semiconductor lattice defective thus.
Fig. 5 A is known to the 500 times enlarged drawings of silicon nitride as the made gallium nitride semiconductor component of buffer body surface with observation by light microscope, and Fig. 5 B is that the present invention is with magnesium nitride silicon 500 times of enlarged drawings in gallium nitride semiconductor component surface as the nitride film material that is rich in metal; Can find that by comparison diagram 5A and Fig. 5 B the blemish of semiconductor element is lacked than the semiconductor element of Fig. 5 A among Fig. 5 B; Hence one can see that, replaces silicon nitride buffering physical efficiency with the nitride film that is rich in metal and reduce the epitaxy defect generation effectively, improves the extension quality.
In addition, the present invention also can be widely used in the semiconductor element that efficiency of element and extension quality concern, for example light-emitting diode (Light Emitting Diode, LED) on, especially for the gallium nitride ultraviolet light-emitting diodes (GaN UV LED) of extension quality requirements strictness.Fig. 6 A is the structural representation of another embodiment of the present invention, as shown in Figure 6A, one light-emitting diode 600 comprises a substrate 60, and the material of substrate 60 can be sapphire (sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), gallium nitride (GaN), metal or transparent material etc.; One is rich in the nitride film 62 of metal on substrate 60, incomplete covered substrate 60, its coverage rate is approximately less than 60%, and the nitride film 62 that wherein is rich in metal is preferably magnesium nitride silicon, its structure optimization ground is a discontinuous membrane structure, for example forms a plurality of blocks or archipelago shape structure; One first resilient coating 64 is positioned on substrate 60 and the magnesium nitride silicon thin film 62, and its material is gallium nitride or aluminium nitride; One luminous lamination 66, be positioned on first resilient coating, the material of this luminous lamination 66 is a gallium nitride series material, from bottom to top comprise one first conductive-type semiconductor layer 660, a luminescent layer 662 and one second conductive-type semiconductor layer 664 at least, wherein have the surface of exposed first conductive-type semiconductor layer 660; And one first electrode 68 and one second electrode 70 are laying respectively at surface and second conductive-type semiconductor layer, 664 upper surfaces that first conductive-type semiconductor layer 660 exposes.
Wherein, this material that is rich in the nitride film 62 of metal is selected from magnesium nitride silicon (MgSiN), zinc nitride silicon (ZnSiN), magnesium nitride germanium (MgGeN) and zinc nitride germanium (ZnGeN) series material etc., and central metal ingredient is more than the twice of nonmetal composition.
In addition, light-emitting diode 600, also can be shown in Fig. 6 B, also can comprise one second resilient coating, be formed between the nitride film 62 and substrate 60 that is rich in metal, its material can be gallium nitride or aluminium nitride, in order to reduce the upwardly extending situation of extension dislocation, improves the extension quality of light-emitting diode 600 thus.
Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose is enabling those skilled in the art to understand content of the present invention and enforcement according to this, when can not with qualification claim of the present invention, promptly equivalent variations or the modification of doing according to disclosed spirit generally must be encompassed in the claim of the present invention.
Claims (10)
1. one kind is reduced the method that the semiconductor epitaxial dislocation takes place, and comprises:
Substrate is provided;
The nitride film that forms metal is on this substrate;
Form dislocation on this substrate; And
Change the bearing of trend of this dislocation.
2. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place also comprises:
Form semi-conducting material on the nitride film of this substrate and this metal;
Wherein this dislocation is to be formed in this semi-conducting material.
3. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the nitride film of this metal does not cover this substrate fully.
4. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the nitride film of this metal is discontinuous membrane structure.
5. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the material of the nitride film of this metal is to be selected from the group that magnesium nitride silicon, zinc nitride silicon, magnesium nitride germanium and zinc nitride germanium are constituted.
6. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the nitride film of this metal comprises metal ingredient and nonmetal composition, and this metal ingredient is more than the twice of this nonmetal composition.
7. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the nitride film of this metal is a non crystalline structure.
8. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, the bearing of trend that wherein changes this dislocation is to extend by changing into vertically upward to horizontal direction.
9. the method that minimizing semiconductor epitaxial dislocation as claimed in claim 1 takes place, wherein the change of the bearing of trend of this dislocation is to occur in the nitride film of this metal top.
10. gallium nitride semiconductor structures comprises:
The nitride film of at least one metal; And
At least one dislocation is formed at outside the nitride film of this at least one metal, and the bearing of trend of this dislocation changes above the nitride film of this at least one metal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110038044 CN102136414B (en) | 2008-04-16 | 2008-04-16 | Gallium nitride semiconductor structure for reducing semiconductor epitaxy dislocation and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598235A (en) * | 2018-05-09 | 2018-09-28 | 芜湖德豪润达光电科技有限公司 | Gan base led structure and preparation method thereof |
| CN114420813A (en) * | 2022-01-25 | 2022-04-29 | 湘能华磊光电股份有限公司 | LED chip manufacturing method |
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| CN1205556A (en) * | 1997-03-25 | 1999-01-20 | 三菱电线工业株式会社 | Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| CN1283306A (en) * | 1997-10-30 | 2001-02-07 | 住友电气工业株式会社 | GaN signale crystalline substrate and method of producing the same |
| TW486829B (en) * | 2000-11-16 | 2002-05-11 | United Epitaxy Co Ltd | Epitaxial growth of nitride semiconductor |
| KR20050105516A (en) * | 2003-03-07 | 2005-11-04 | 스미또모 가가꾸 가부시끼가이샤 | Substrate of gallium nitride single crystal and process for producing the same |
| CN1965112A (en) * | 2004-06-09 | 2007-05-16 | 住友电气工业株式会社 | III group nitride crystal and method for preparation thereof, and III group nitride crystal substrate and semiconductor device |
| TW200949905A (en) * | 2008-02-08 | 2009-12-01 | Showa Denko Kk | Group III nitride semiconductor epitaxial substrate and process for producing the same |
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- 2008-04-16 CN CN 201110038044 patent/CN102136414B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205556A (en) * | 1997-03-25 | 1999-01-20 | 三菱电线工业株式会社 | Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| CN1283306A (en) * | 1997-10-30 | 2001-02-07 | 住友电气工业株式会社 | GaN signale crystalline substrate and method of producing the same |
| TW486829B (en) * | 2000-11-16 | 2002-05-11 | United Epitaxy Co Ltd | Epitaxial growth of nitride semiconductor |
| KR20050105516A (en) * | 2003-03-07 | 2005-11-04 | 스미또모 가가꾸 가부시끼가이샤 | Substrate of gallium nitride single crystal and process for producing the same |
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| TW200949905A (en) * | 2008-02-08 | 2009-12-01 | Showa Denko Kk | Group III nitride semiconductor epitaxial substrate and process for producing the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598235A (en) * | 2018-05-09 | 2018-09-28 | 芜湖德豪润达光电科技有限公司 | Gan base led structure and preparation method thereof |
| CN114420813A (en) * | 2022-01-25 | 2022-04-29 | 湘能华磊光电股份有限公司 | LED chip manufacturing method |
| CN114420813B (en) * | 2022-01-25 | 2023-08-01 | 湘能华磊光电股份有限公司 | LED chip manufacturing method |
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