CN102132481A - Plasma power supply device - Google Patents
Plasma power supply device Download PDFInfo
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- CN102132481A CN102132481A CN2008801309000A CN200880130900A CN102132481A CN 102132481 A CN102132481 A CN 102132481A CN 2008801309000 A CN2008801309000 A CN 2008801309000A CN 200880130900 A CN200880130900 A CN 200880130900A CN 102132481 A CN102132481 A CN 102132481A
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- plasma power
- processing apparatus
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5383—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a self-oscillating arrangement
- H02M7/53832—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a self-oscillating arrangement in a push-pull arrangement
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to an RF power amplifier device (11) having a DC electrical power supply and having a switching bridge (12) which contains two switching elements (S1, S2), which are at least indirectly connected in series, and whose centre point (M) forms the switching bridge output, wherein the first switching element (S1) is controlled via an active control signal generator, and an auxiliary circuit is provided in order to produce a control signal for the second switching element (S2) as a function of a change in the operating state of the first switching element (S1).
Description
Technical field
The present invention relates to a kind of plasma power feedway that has the frequency that is higher than 3MHz and be higher than the power of 500W that is used to produce, comprise HF power amplifier apparatus with DC electric supply installation and connected switch bridge, described switch bridge comprise two at least indirectly the mid point of switch in series and described switch bridge form the switch bridge output, wherein, first switch element is controlled by control-signals generator initiatively.
Background technology
It is known being used in 1 to 50MHz frequency range, especially encouraging the power amplifier of plasma process (for example, be used for RF sputter, etching or be used for the exciting gas laser device) under industrial frequency 13.56,27.12 and 40.68MHz.Such power amplifier has the different capacity grade from 1kW to some 100kW approximately.For the smaller power in 1 to the 20kW scope, preferably use the amplifier (semiconductor amplifier) of based semiconductor module.For bigger power, often use discharge-tube amplifier.Discharge-tube amplifier has amplifier tube, described amplifier tube aspect it by the based semiconductor module, promptly drive corresponding to the power amplifier of the amplifier under the small-power.Because electron tube has very high space requirement, so expectation also is used for more powerful power amplifier by the amplifier architecture of based semiconductor module.For this reason, link together by the semiconductor amplifier of suitable power coupler smaller power.
The importance of the power amplifier of based semiconductor module is minimizing of loss power, mainly is that the loss power in the semiconductor module self minimizes.Therefore, the HF generator that has such power amplifier in order to encourage plasma process mainly to use, described power amplifier have one or more switch elements and move or the work in service of E class in the D class.
For the operation of D class, use two switch in series, for example MOSFET usually.Described circuit arrangement is known as switch bridge or half-bridge.MOSFET has two power splicing ears (drain electrode and source electrode) and a control connection terminal (grid).Carry out the control of MOSFET by grid-source voltage, wherein, can control source electrode splicing ear as the voltage reference points of described parts.Preferably, use the n channel mosfet, because it compares the loss power that can turn on and off more quickly and produce still less with the p channel mosfet.
Common circuit is as follows, and: top MOSFET (flash switch HSS) is connected with positive DC supply power voltage by its first power splicing ear (the drain electrode splicing ear in the n channel mosfet) and by the drain electrode splicing ear connection of its second power splicing ear (the source electrode splicing ear in the n channel mosfet) with following MOSFET (lower edge switch LSS, common n channel mosfet).The source electrode splicing ear of following MOSFET is connected with the DC supply power voltage of bearing.The output signal of (mid point of switch bridge) intercepting half-bridge between two switch elements (MOSFET).Respectively by two MOSFET of its grid splicing ear (control connection terminal) control.
The source electrode splicing ear of LSS is positioned on the static negative potential of DC supply power voltage, and also guides the HF output signal for its source electrode splicing ear of HSS under the situation of using the n channel mosfet.Therefore, the control voltage (grid-source voltage) of HSS also must have fast-changing (suspension), high potential difference with respect to the HF control signal, and the current potential of complexity separated and by compare the danger that less control voltage causes the mistake control of HSS with the HF output voltage when this control-signals generator on being arranged in resting potential required the control voltage transmission.
Importantly, two switch elements are arranged in conducting state anything but simultaneously in the half-bridge that voltage is fed because otherwise supply power voltage with short circuit.This more and more is difficult to guarantee under more and more higher frequency.The time delay that turns on and off switch element is in this process that recharges that at first comes from the inductive effect of circuit and come from the internal capacitance of switch element, and the described length that recharges the duration in this external each switch element of process can be different.
In the E class A amplifier A, replace HSS by choke, described choke provides DC electric current to the output (corresponding to the mid point in the D class A amplifier A) of circuit.Closed switch element (corresponding to the LSS in the D class A amplifier A) causes the low-voltage on the output of circuit, and the electric current of choke is flow through in this triggering; Described electric current self-induction owing to choke after the cut-off switch element is kept, and this produces the high voltage of midpoint.
Compare with the operation of E class, the operation of D class has the following advantages: be limited on the DC supply power voltage at the voltage that is constructed on the transistorized switch element, and the cut-ff voltage on E class transistor in service can rise to more than three times of supply power voltage.
But, compare with the operation of E class, D class operation has following shortcoming: the point-device of coefficient switch element is essential synchronously, and it becomes more and more difficult under more and more higher switching frequency, and must realize being used to controlling HSS, with respect to the reference point of the current potential of Fast transforms.
At US 7,180, the example of D class A amplifier A and E class A amplifier A is disclosed among the 758B2.
Summary of the invention
Therefore, task of the present invention is, a kind of circuit arrangement is provided, and described circuit arrangement reduces or avoid the described shortcoming and the advantageous combination of operation of D class and the operation of E class.
According to the present invention, described task solves by the plasma power feedway of the described type of beginning, wherein is provided with the operating state that is used for owing to first switch element and changes the auxiliary circuit that produces the control signal that is used for the second switch element.According to the present invention, automatically, passively, non-ly on one's own initiative, promptly do not have plant control unit or irrespectively control the second switch element with plant control unit.Compare with traditional E class A amplifier A, big voltage upper punch do not occur.Because do not need the ACTIVE CONTROL (and therefore not needing control-signals generator initiatively) of second switch element, can save assembly, thereby can cost constructing apparatus advantageously.In addition, for the second switch element, neither need driver also not need actuator control device.Avoided in the prior art problem that occurs because driver or driving control device are positioned on the floating potential of second switch element.In addition, realized the synchronous automatically of two switch elements by device according to the present invention.Thus, compare with the D class methods of classics and do not have following danger: short circuit is connected and produced to two switch elements simultaneously.Generally speaking, the HF power amplifier apparatus only comprises by the switch element of ACTIVE CONTROL as the E class A amplifier A, but as the D class A amplifier A its working voltage is restricted on the supply power voltage basically.
First and/or the second switch element can be constructed to bipolar transistor, field-effect transistor---especially MOSFET or IGBT.Configuration as MOSFET has special advantage, because described assembly cost is favourable and have high efficient.
Auxiliary circuit can have signal processing apparatus, and described signal processing apparatus is connected with the mid point of switch bridge indirectly or directly.By signal processing apparatus, can generate the signal that is used for the second switch element based on the signal relevant with curtage in the mid point.Signal processing apparatus needn't be by the control device of outside or outside signal generator control.
In a simple especially execution mode, signal processing apparatus can only have a lead section, and wherein, described lead section can make the control connection terminal of second switch element be connected with mid point.
Auxiliary circuit can have capacitor, described capacitor is connected between the mid point of second switch element and switch bridge or the current potential of second switch element and DC electric supply installation, especially between the positive potential.At the end of the conducting phase of first switch element, first switch element ends, and the transformation of output voltage (voltage of midpoint) begins.In case output voltage is elevated to more than the positive DC supply power voltage, then the body diode conducting of second switch element.The reverse current that flows through the body diode of second switch element makes the capacitor charging of series connection with it now.The voltage of described capacitor is the grid-control voltage of second switch element simultaneously, thus the present conducting of second switch element and always keep conducting up to discharging into again less than connecting on the required threshold voltage at electric current commutation back capacitor.The second switch element is from switch and therefore automatically synchronous with first switch element.
The size of the electric capacity of capacitor can be the twice at least of the size of the electric capacity between the power splicing ear (drain electrode and source electrode) of first switch element, especially at least five times, and preferably at least ten times.Thus, the too high voltage of midpoint is guided on the positive splicing ear of DC electric supply installation reliably by the second switch element.
Can be provided with choke in parallel with the second switch element.Especially, when turn-offing, also guarantees by the second switch element DC electric current.Choke can so be designed, and makes the electric current that flows through choke change less than 20% during the one-period of fundamental frequency.Can realize being similar to the switching characteristic of E class principle thus.The faradic electric charge of choke can be stored in the capacitor that is provided with the second switch element connected in series.
Auxiliary circuit can comprise coil or coil section, and an end of described coil/coil section is connected with mid point and its other end is connected with signal processing apparatus.Can produce a voltage when turn-offing first switch element by such coil, described voltage is enough connected the second switch element.Coil can be set to the independent coil of the elementary windings in series of output transformer and with its magnetic coupling or be set to coil section, i.e. the part of the elementary winding of output transformer, and wherein, mid point is connected with the tap of elementary winding.This means: the initial winding of output transformer is longer and have a tap with respect to traditional execution mode.
Alternatively, coil can be used as coil section, the part of choke promptly in parallel with the second switch element, and wherein, mid point is connected with the tap of choke.Yet, coil can as its can be provided with that independent coil of conduct and choke in series are provided with the elementary windings in series of output transformer and with its magnetic coupling.
Signal processing apparatus can comprise filter, especially high pass filter, low pass filter or band pass filter, perhaps resonant tank.Can regulate the signal shape of the control signal of second switch element thus.Signal processing apparatus also can include source component.Yet it need not to be connected on the control device of predetermined signal, especially on Zhu Dong the signal generator.
Alternatively or additionally, signal processing apparatus can also comprise voltage divider and/or attenuation units.Voltage divider can be realized by the amplifier installation with gain coefficient＜1.Can be used for the shaping of the control signal of second switch element such as the attenuation units of the series resonant tank that decays.
Signal processing apparatus comprises one or more amplifiers.Especially, input signal that can the amplifying signal processing unit.
If signal processing apparatus has transformer, then can realize the current separation in the signal processing apparatus.
Signal processing apparatus can be connected with a plurality of elements of auxiliary circuit.This means: under the situation of a plurality of signals of considering auxiliary circuit, generate the control signal that is used for the second switch element.Therefore, signal processing apparatus can comprise a plurality of inputs, for example is used for the measured value or the electric current of mid-point voltage or is applied to voltage on the end of coil.
Can be connected a capacitor in parallel with first switch element.Can after turn-offing first switch element, make the switch on delay of second switch element by described capacitor.
Can be provided with output network, described output network is connected with mid point, and can export intercepting HF output signal on the splicing ear at it.By output network, can pass electric current and voltage each other, so that the source electrode splicing ear with respect to the second switch element obtains suitable voltage on mid point, thereby guarantee turning on and off reliably of second switch element.
Output network can be tuned on the fundamental frequency.This means: make have fundamental frequency and on output desired signal pass through.The harmonic frequency of other frequencies, especially fundamental frequency is by filtering.Also can expressly make output network with respect to the fundamental frequency off resonance, be about to output network be tuned to fundamental frequency slightly on the frequency of deviation.Can realize thus switch bridge midpoint voltage and flow through the curve shape and the time interval determined of the electric current of output network.
In addition, the method that is used to move the plasma power feedway also within the scope of the invention, described plasma power feedway comprises the HF power amplifier apparatus with DC electric supply installation and connected switch bridge, described switch bridge comprises two switch in series and its mid point formation switch bridge outputs at least indirectly, wherein, control first switch element by control-signals generator initiatively.Owing to changing, the operating state of first switch element produces the control signal that is used for the second switch element.The working voltage of first switch element can be restricted on the service voltage basically thus.Protect first switch element thus.Any ACTIVE CONTROL that does not need the second switch element.Can save assembly.Circuit safety and working reliably.
As the control signal that is used for the second switch element, can produce positive voltage with respect to the midpoint potential of switch bridge.Can connect the second switch element thus.At this, can under the situation that does not have signal generator initiatively, produce control signal.
At this, so control the second switch element, make its electric current that at first allows the electric charge on the first direction by and the part of charge that on first direction, flows through just block electric current on the rightabout when flowing out in the opposite direction.
Can pass voltage change process and electric current change procedure on first switch element so each other, make the voltage on the switch element of winning connect the moment less than 30% of the potential difference between the current potential of DC electric supply installation at it, preferred 20%.Can realize little switching loss thus.
With the second switch element in parallel, can use choke, it is so determined size, is made that the electric current that flows through choke during the one-period of fundamental frequency changes less than 20%.Guarantee the constant electric current supply of first switch element thus.
By subsequently according to the accompanying drawing that details of the present invention is shown to drawing other features and advantages of the present invention in the description of embodiments of the invention and the claim.Each feature can realize separately in flexible program of the present invention or a plurality ofly realize with combination in any.
Description of drawings
Schematically illustrated in the accompanying drawings the preferred embodiments of the present invention, and explain these preferred embodiments below with reference to accompanying drawing.Accompanying drawing illustrates:
Fig. 1: the schematic diagram of HF power amplifier apparatus;
Fig. 2: first detailed view of HF power amplifier apparatus;
Fig. 3: the alternate configuration of HF power amplifier apparatus;
Fig. 4: another execution mode of HF power amplifier apparatus,
The conversion scheme of the execution mode of Fig. 5: Fig. 4;
Fig. 6 a-6g: the different possible configuration of signal processing apparatus;
Voltage change process on the switch element of Fig. 7 a:E class A amplifier A;
Fig. 7 b: the voltage change process on the switch element below the switch bridge of in the D class A amplifier A, moving;
Fig. 7 c: according to the voltage change process on first switch element of HF power amplifier apparatus of the present invention.
Embodiment
Fig. 1 illustrates the schematic diagram of HF power generator 10, and described HF power generator 10 has HF power amplifier apparatus 11, and described HF power amplifier apparatus 11 has switch bridge 12.Switch bridge 12 comprises two switch in series S1 and S2.Switch bridge 12 both also was connected with the negative potential 14 of DC electric supply installation with the positive potential 13 of DC electric supply installation.The mid point of representing the series circuit that constitutes by switch element S1 and S2 with M.Mid point M represents the output splicing ear of switch bridge 12.Output network 15 is connected with mid point M, and described output network 15 has output transformer 16 in this embodiment, and plasma load 17 is connected on the described output transformer 16.Output network 15 also has the tap of series capacitor, series reactor, oscillation circuit, output transformer except that output transformer 16, or the like.Also can consider not have the output network 15 of output transformer 16.In addition, output network 15 can comprise autotransformer.
Plasma load 17 only is expressed as impedance.But load also can also additionally have impedance matching network.Can also be connected with another switch bridge at an X place.Alternatively, some X can be connected with ground in the mode of alternating current, as realizing by capacitor 18.1,18.2 in the embodiment shown.
The first switch element S1 is by driver 19 control, described driver 19 again with unshowned, initiatively control-signals generator---for example plant control unit is connected.Therefore, produce the control signal of switch element S1 on one's own initiative by signal generator.Produce the control signal of second switch element S2 by signal processing apparatus 20. Different assemblies 21,22,23 are connected with signal processing apparatus 20.These assemblies and assembly 26 constitute auxiliary circuit with signal processing apparatus 20.
In order to connect second switch element S2, signal processing apparatus 20 must be responsible for assembly 21,22,23: the current potential on the control connection terminal 24 of switch element S2 is higher than the current potential on (power) splicing ear 25 of second switch element S2, and therefore the current potential on (power) splicing ear 25 of second switch element S2 also is the reference potential of signal processing apparatus 20.Except that the voltage drop that can produce in assembly 21, described current potential is the current potential of mid point M basically.Passively, promptly under the situation of the signal that does not have plant control unit, carry out the control of second switch element S2 by signal processing apparatus 20.
In the execution mode in Fig. 2, signal processing apparatus 20 only is constructed to track section 30 that mid point M is connected with the control connection terminal 24 of second switch element S2.Assembly 21 is constructed to capacitor and assembly 23 is constructed to choke.Output network 15 comprises the series connection oscillation circuit.The capacitor 31 in parallel with the first switch element S1 is optional.Therefore, connection line is illustrated by the broken lines.
In the embodiment of Fig. 2, HF power amplifier device 11 is constructed to have the E class A amplifier A of additional switch element S2.Make the electric current that leads to mid point M keep approximately constant by the assembly 23 that is constructed to choke.If the first switch element S1 is turned off, then the induced current of flowing through component 23 makes the high positive potential 13 that surpasses the DC electric supply installation of potential rise among the mid point M.The electric current of flowing through component 21 and second switch element S2 (electric current at first only flows through body diode or the parasitic capacitance of switch element S2) causes: the current potential on control connection terminal 24 or the control connection terminal 24 is higher than the current potential on the splicing ear 25.Second switch element S2 begins conducting.The charge storage of being gathered by the electric current of flowing through component 23 is in assembly 21 or cross the electric current of output network 15 at sense of current counter-rotating back enhanced flow.The switch element S2 of assembly 21 and conducting with the voltage limit among the mid point M on the value of the positive potential 13 that only is slightly higher than the power DC current supply arrangement.Can control the curve shape of the voltage change process among the mid point M by the series connection oscillation circuit in capacitor (assembly 21), assembly 23 and the output network 15.In parallel with switch element S2, optionally capacitor 31 makes switch on delay and otherwise the also influence curve shape of second switch element S2 after turn-offing the first switch element S1.
In HF power amplifier apparatus execution mode shown in Figure 3, output network 15 has output transformer 16, and described output transformer 16 has primary coil 35.Primary coil 35 is compared with traditional execution mode and has been prolonged a coil section 36.Mid point M is connected with an end of coil section 36.This means: elementary winding 35 has tap 37.The other end of coil section 36 is connected with signal processing apparatus 20, and described signal processing apparatus 20 produces the control signal that is used for second switch element S2.Therefore, coil section 36 both also was connected with signal processing apparatus 20 with mid point M and signal processing apparatus 20 is connected with mid point M thus indirectly.
If switch element S1 is turned off, then the voltage that induces in elementary winding 35 causes the overvoltage on the M.On coil section 36 and end that signal processing apparatus 20 is connected, overvoltage is higher.Described overvoltage is applied on the control connection terminal 24 of switch element S2 by signal processing apparatus 20.Current potential on the control connection terminal 24 is higher than the current potential on the mid point M, and the splicing ear 25 of switch element S2 is positioned on the current potential of mid point M.Switch element S2 connects thus.
In described embodiment, there are not assembly 21 and 23.This means: realize the D class A amplifier A basically.Can be by the curve shape of the voltage among other impedance adjustment mid points M in the output network 15.
In order at first to connect switch element S1, can between the positive potential 13 of mid point M and DC electric supply installation, choke be set, but described choke do not have influence to other operations.
In according to the embodiment of Fig. 2, also can be provided with the overvoltage that causes by coil section 36.
In the embodiment of Fig. 4, also be provided with the assembly 23 that is constructed to choke, wherein, tap 40 definition coil section 41, described coil section realizes overvoltage again.When stopcock element S1, the electric current by continuing flowing through component 23 and especially produce overvoltage by the prolongation that coil section 41 causes by it, described overvoltage is applied on the control connection terminal 24 by signal processing apparatus 20.Make the current potential among the high mid point M of surpassing of potential rise on the control connection terminal 24 thus, the current potential among the mid point M is represented the reference potential of switch element S2, thereby switch element S2 connects.In this embodiment, assembly 26 is constructed to capacitor.Replace assembly 26, also the assembly 21 that is constructed to capacitor can be set between switch element S2 and mid point M.
Iff being provided with assembly 26, then switch element S1 and S2 directly are connected to each other, and are provided with assembly 21 if replace assembly 26 between switch element S1 and switch element S2, and then switch element S1, S2 connect indirectly.
In Fig. 5, also can see, not only carry the signal that on the end of coil section 41, exists to signal processing apparatus 20, and signal processing apparatus 20 also is connected with the splicing ear 25 of switch element S2, thereby the reference potential of switch element S2 is provided to signal processing apparatus 20.Signal processing apparatus 20 both also was connected with mid point M by assembly 21 indirectly by coil section 41.Under the situation of considering described signal, in signal processing apparatus 20, try to achieve the control signal that is used for switch element S2.
Additionally, also can followingly be provided with: primary coil 35 prolongs a coil section, so that continue to contribute to overvoltage.
The different execution modes of signal processing apparatus 20 have been shown in Fig. 6 a to 6g.At this, the splicing ear in left side represents the input splicing ear of signal processing apparatus 20 and the splicing ear on right side is represented the output splicing ear that is connected with control connection terminal 24.Can influence amplitude, curvilinear motion process and the time response of the control signal that is used for S2 by described signal processing apparatus 20.
In Fig. 6 a, signal processing apparatus 20 is only by lead section 30 structures.By described lead section 30 signal input part 45 is connected with output splicing ear 80.
In execution mode according to Fig. 6 b, in signal processing apparatus 20, be configured with the RC low pass filter, by described RC low pass filter the control voltage of second switch element S2 is shaped.Splicing ear 46 is connected with reference potential, and described reference potential is positioned at the scope of the reference potential of second switch element S2.For example, splicing ear 46 can be connected with the source electrode splicing ear (splicing ear 25) of switch element S2 or with mid point M.
In the execution mode according to Fig. 6 c, signal processing apparatus 20 has transformer 47, and described transformer 47 is connected with splicing ear 45 and is connected with splicing ear 80 in primary side in primary side.Splicing ear 46.1 is connected with reference potential again with 46.2, described reference potential be positioned at second switch element S2 reference potential scope and for example can be the current potential of mid point M.
In the execution mode according to Fig. 6 d, signal processing apparatus 20 has two signal input parts 45.1,45.2, and described two signal input parts are connected with an amplifier 48,49 respectively.The output signal of amplifier 48,49 is by addition in adder 50.The gain of amplifier 48,49 also can be less than 1.The output signal of adder 50 is exported to control connection terminal 24 by splicing ear 80.If the gain that amplifier 48,49 has less than 1, then it can be realized by voltage divider.
An execution mode at signal processing apparatus 20 shown in Fig. 6 e, described signal processing apparatus 20 has the rectifier 51 that is constructed to diode, described rectifier 51 has at latter linked low pass filter 52, and described low pass filter comprises 53,54 and capacitors 55 of two resistance.Diode 51 and low pass filter 52 cause the fast rise of control signal and slowly descend.
At signal processing apparatus 20 shown in Fig. 6 f, described signal processing apparatus has the series connection oscillation circuit 56 of decay.Described series connection oscillation circuit have coil 57 and capacitor 58 series circuit and with its parallel resistor 59.
At the high pass filter of being made up of capacitor 61 and resistance 62 shown in Fig. 6 e 60, it represents signal processing apparatus 20.
Change in voltage 70 on the splicing ear on switch element S1 shown in Fig. 7 a is if implement traditional E class operation.In service in traditional E class, there is not second switch element S2 usually, but only has choke, be connected with the positive potential of DC electric supply installation by described choke switch element S1.As from can seeing Fig. 7 a, maximum voltage is more much higher than the positive potential 13 of DC electric supply installation.Therefore, following situation can appear: apply very high voltage on switch element S1.
Change in voltage 71 on the switch element S1 on mid point M shown in Fig. 7 b or below the switch bridge, described switch bridge is in the operation in service of D class.Except that little upper punch 72, voltage is limited on the positive potential 13 of DC electric supply installation.
In the change in voltage 72 of in HF power amplifier apparatus according to the present invention, regulating shown in Fig. 7 c.Can see that voltage 73 is limited on the positive potential 13 of DC electric supply installation basically.
Claims (26)
1. be used to produce the plasma power feedway of the HF signal of the power that has the frequency that is higher than 3MHz and be higher than 500W, comprise a HF power amplifier apparatus (11), described HF power amplifier apparatus (11) has a DC electric supply installation and a switch bridge (12) that is connected with described DC electric supply installation, described switch bridge (12) comprises two switch in series (S1 at least indirectly, S2) and the mid point of described switch bridge (M) form the switch bridge output, wherein, first switch element (S1) is to control by the control-signals generator of an active, it is characterized in that, be provided with the operating state that is used for owing to described first switch element (S1) and change the auxiliary circuit that produces the control signal that is used for second switch element (S2).
2. plasma power feedway according to claim 1 is characterized in that, described auxiliary circuit has a signal processing apparatus (20), and described signal processing apparatus is connected with described mid point (M) indirectly or directly.
3. plasma power feedway according to claim 2 is characterized in that, described signal processing apparatus (20) only has a lead section (30).
4. according to each described plasma power feedway in the above claim, it is characterized in that, described auxiliary circuit comprises a capacitor, and described capacitor is connected between described second switch element (S2) and the described mid point (M) or between the current potential (13) of described second switch element (S2) and described DC electric supply installation.
5. plasma power feedway according to claim 4, it is characterized in that, the size of the electric capacity of described capacitor is the twice at least of the size of the electric capacity between the power splicing ear of described first switch element (S1), especially at least 5 times, and preferably at least 10 times.
6. according to each described plasma power feedway in the above claim, it is characterized in that, described auxiliary circuit has a coil or a coil section (36,41), described coil or described coil section (36,41) a end is connected with described mid point (M) and the other end of described coil or described coil section (36,41) is connected with described signal processing apparatus (20).
7. plasma power feedway according to claim 6, it is characterized in that described coil section (36) is that the part and the described mid point (M) of the elementary winding (35) of an output transformer (16) is connected with a tap (37) of described elementary winding (35).
8. plasma power feedway according to claim 6, it is characterized in that, described coil section (41) is the part of a choke (23), described choke is in parallel with described second switch element (S2), wherein, described mid point (M) is connected (40) with a tap of described choke (23).
9. according to each described plasma power feedway in the above claim, it is characterized in that a choke (23) is provided with in parallel with described second switch element (S2).
10. plasma power feedway according to claim 9 is characterized in that, described choke (23) is so designed, and makes the electric current that flows through described choke (23) change less than 20% during the one-period of fundamental frequency.
11., it is characterized in that described signal processing apparatus (20) comprises a filter, especially high pass filter, low pass filter or band pass filter, perhaps a resonant tank according to each described plasma power feedway in the above claim 2 to 10.
12., it is characterized in that described signal processing apparatus (20) comprises a voltage divider and/or an attenuation units according to each described plasma power feedway in the above claim 2 to 11.
13., it is characterized in that described signal processing apparatus (20) comprises one or more amplifiers (48,49) according to each described plasma power feedway in the above claim 2 to 12.
14., it is characterized in that described signal processing apparatus (20) comprises a transformer (47) according to each described plasma power feedway in the above claim 2 to 13.
15., it is characterized in that described signal processing apparatus (20) connects with a plurality of elements (21,22,23) of described auxiliary circuit according to each described plasma power feedway in the above claim 2 to 14.
16. according to each described plasma power feedway in the above claim, it is characterized in that, with described first switch element (S1) capacitor in parallel (31).
17. according to each described plasma power feedway in the above claim, it is characterized in that, be provided with an output network (15), described output network is connected with described mid point (M), and a HF output signal can be intercepted on the output splicing ear of described output network.
18. plasma power feedway according to claim 17 is characterized in that, described output network (15) is tuned on the described fundamental frequency.
19. plasma power feedway according to claim 17 is characterized in that, described output network (15) is tuned on the frequency different with described fundamental frequency.
20., it is characterized in that described signal processing apparatus (20) is not connected with signal generator initiatively according to each described plasma power feedway in the above claim 2 to 19.
21. be used to move the method for a plasma power supply device, described plasma power feedway comprises a HF power amplifier apparatus (11), described HF power amplifier apparatus (11) has a DC electric supply installation and a switch bridge (12) that is connected with described DC electric supply installation, described switch bridge (12) comprises two switch in series (S1 at least indirectly, S2) and the mid point (M) of described switch bridge (12) form the switch bridge output, wherein, control-signals generator by an active is controlled first switch element (S1), it is characterized in that, produce a control signal that is used for second switch element (S2) owing to the operating state of described first switch element (S1) changes.
22. method according to claim 21 is characterized in that, as the control signal that is used for described second switch element (S2), produces the positive voltage of a reference potential with respect to described second switch element (S2) (splicing ear 25).
23. method according to claim 22 is characterized in that, produces described control signal under the situation that does not have signal generator initiatively.
24. according to each described method in the above claim 21 to 23, it is characterized in that, so control described second switch element (S2), make described second switch element at first allow the electric current of the electric charge on the first direction to pass through, and the part of charge that on first direction, flows through when flowing out in the opposite direction described second switch element just block electric current on the rightabout.
25. according to each described method in the above claim 21 to 24, it is characterized in that, so pass voltage change process and electric current change procedure on described first switch element each other, make voltage on described first switch element (S1) in moment of its connection the current potential (13 less than described DC electric supply installation, 14) 30% of the potential difference between is preferably less than 20% of described voltage difference.
26. according to each described method in the above claim 21 to 25, it is characterized in that, use a choke in parallel with described second switch element (S2), described choke is so determined size, makes the electric current that flows through described choke change less than 20% during the one-period of fundamental frequency.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2008/006993 WO2010022749A1 (en) | 2008-08-27 | 2008-08-27 | Plasma power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102132481A true CN102132481A (en) | 2011-07-20 |
| CN102132481B CN102132481B (en) | 2014-07-02 |
Family
ID=40599622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880130900.0A Expired - Fee Related CN102132481B (en) | 2008-08-27 | 2008-08-27 | Plasma power supply device |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2319167A1 (en) |
| CN (1) | CN102132481B (en) |
| WO (1) | WO2010022749A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111226394A (en) * | 2017-11-01 | 2020-06-02 | 艾思玛太阳能技术股份公司 | Circuit arrangement and power electronic converter circuit |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3400671C1 (en) * | 1984-01-11 | 1985-10-24 | Thomson Brandt Gmbh | Inverter for feeding a consumer with an inductive component |
| EP0652632B1 (en) * | 1993-10-08 | 2002-02-27 | Sawafuji Electric Co., Ltd. | Power supply for vibrating compressors |
| DE69903124T2 (en) * | 1999-01-19 | 2003-04-24 | Magnetek Spa | Operating circuit for an oscillating load |
| US7180758B2 (en) * | 1999-07-22 | 2007-02-20 | Mks Instruments, Inc. | Class E amplifier with inductive clamp |
| JP3233138B2 (en) * | 1999-09-27 | 2001-11-26 | 松下電器産業株式会社 | Inverter circuit |
| US7100532B2 (en) * | 2001-10-09 | 2006-09-05 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
| JP2006254540A (en) * | 2005-03-08 | 2006-09-21 | Sony Corp | Switching power supply circuit |
| CN101454863B (en) * | 2006-05-22 | 2012-01-04 | 安捷伦科技澳大利亚有限公司 | Power generator for spectrometry |
-
2008
- 2008-08-27 EP EP08801722A patent/EP2319167A1/en not_active Withdrawn
- 2008-08-27 WO PCT/EP2008/006993 patent/WO2010022749A1/en active Application Filing
- 2008-08-27 CN CN200880130900.0A patent/CN102132481B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111226394A (en) * | 2017-11-01 | 2020-06-02 | 艾思玛太阳能技术股份公司 | Circuit arrangement and power electronic converter circuit |
| CN111226394B (en) * | 2017-11-01 | 2024-03-22 | 艾思玛太阳能技术股份公司 | Circuit arrangement and power electronic converter circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010022749A1 (en) | 2010-03-04 |
| CN102132481B (en) | 2014-07-02 |
| EP2319167A1 (en) | 2011-05-11 |
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