CN102130271A - LED (light-emitting diode) chip packaging structure and white light LED light-emitting device - Google Patents
LED (light-emitting diode) chip packaging structure and white light LED light-emitting device Download PDFInfo
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- CN102130271A CN102130271A CN 201010503757 CN201010503757A CN102130271A CN 102130271 A CN102130271 A CN 102130271A CN 201010503757 CN201010503757 CN 201010503757 CN 201010503757 A CN201010503757 A CN 201010503757A CN 102130271 A CN102130271 A CN 102130271A
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Abstract
The invention relates to an LED (light-emitting diode) chip packaging structure and a white light LED light-emitting device. The LED chip packaging structure is used for packaging an LED chip and comprises a reflecting substrate, a base and a cap layer, wherein the reflecting substrate is used for bearing the LED chip, and a conical reflecting pit is formed at the side of the reflecting substrate for bearing the LED chip; the reflecting substrate is embedded in the base, and the surface of at least one side is exposed so as to bear the LED chip; and the cap layer covers the LED chip and the base, and one side positioned on the LED chip, of the cap layer is semispherical. In the LED chip packaging structure and the white light LED light-emitting device, the reflecting substrate containing the reflecting pit is embedded into the base, and the reflecting substrate and the conical reflecting pit lead the light which is emitted from the LED chip to the base can be reflected out, so that the light-emitting efficiency is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the invention provides a kind of led chip encapsulating structure, and a kind of White LED light-emitting device.
Background technology
Light-emitting diode (LED) thus be response current and be excited and produce the semiconductor device of versicolor light.This LED compares with traditional luminescent devices such as fluorescent lamps has plurality of advantages, such as longer useful life, lower driving voltage, the higher anti-switching capability of power supply repeatedly etc.Therefore, market increases just gradually to the demand of this LED.
Be only limited to basic colors such as red, blue, yellow and green owing to LED is luminous.For obtaining the LED lighting source of white, the technical scheme of multiple acquisition white light has been developed in this area, and notification number is to disclose a kind of White LED light-emitting device in the Chinese patent of CN100438026C.Described White LED light-emitting device includes three luminescence chip, cooling base and the packaging bodies of red-emitting, green glow, blue light respectively.After mixing, ruddiness, green glow and the blue light that described three luminescence chips send respectively can send white light in packaging body.
Industry is also developed the White LED light-emitting device of another type.Application number is that the United States Patent (USP) of US5998925 promptly discloses a kind of White LED light-emitting device by blue-light LED chip and yttrium-aluminium-garnet (YAG) are packaged together.As shown in Figure 1, described White LED light-emitting device comprises blue-light LED chip 102, cap layer 104 and pedestal 105a.Described blue-light LED chip 102 is installed on the pedestal 105a, and covered by cap layer 104, the two poles of the earth of described blue-light LED chip 102 are respectively by pedestal 105a and go between and 103 link to each other with first pin 106 and the second pin 105b, and its surface-coated towards cap layer 104 has the Ce of containing simultaneously
3+YAG fluorescent material.Described blue-light LED chip 102 emission blue lights, and the fluorescent material on the cap layer 104 sends sodium yellow after being subjected to this blue-light excited.The blue light part that blue-light LED chip 102 sends is absorbed by fluorescent material, and the yellow light mix that another part blue light and fluorescent material send can obtain white light.By chemical composition that changes YAG fluorescent material and the thickness of regulating phosphor powder layer, can obtain the of all kinds white light of colour temperature at 3500-10000K.
Yet because the reflection efficiency of base bottom is lower, the light extraction efficiency of this White LED light-emitting device is on the low side.
Summary of the invention
The problem that the present invention solves provides a kind of led chip encapsulating structure and White LED light-emitting device, improves the light extraction efficiency of led chip and light-emitting device.
For addressing the above problem, the invention provides a kind of led chip encapsulating structure, be used for packaging LED chips, comprise reflective, pedestal and cap layer, wherein,
Described reflective is used to carry led chip, and its side that is used to carry led chip is formed with taper reflection pit;
Described reflective is embedded in the pedestal, and the surface of exposing a side at least is with the carrying led chip;
Described cap layer covers led chip and pedestal, and its side towards described led chip is hemispherical.
Accordingly, the present invention also provides a kind of White LED light-emitting device, comprises led chip, reflective, pedestal and cap layer, wherein,
Described reflective is positioned at the led chip below, described reflective is formed with taper reflection pit towards a side of led chip, the open area of described taper reflection pit is positioned at the led chip below, described led chip is suspended on the described taper reflection pit, and described led chip is coated with fluorescent material away from the one side of reflective;
Described pedestal is used to carry reflective and led chip, and described reflective is embedded in the pedestal;
Described led chip, reflective and pedestal are the cap layer and cover, and described cap aspect is hemispherical to a side of led chip.
Optionally, described led chip is a blue-light LED chip, and described blue-light LED chip adopts gallium nitride material to form, and described gallium nitride material includes P type doped layer, mqw active layer and N type doped layer.
Optionally, described YAG material is for containing Ce
3+YAG fluorescent material.
Compared with prior art, the present invention has the following advantages: embedded the reflective that includes taper reflection pit in pedestal, described reflective and the reflection of taper wherein pit make and can reflect away to the light of pedestal from the led chip emission, thereby improved light extraction efficiency.
Description of drawings
Fig. 1 is the cross-sectional view of prior art White LED light-emitting device;
Fig. 2 is the cross-sectional view of an embodiment of led chip encapsulating structure of the present invention;
Fig. 3 is the schematic top plan view of an embodiment of led chip encapsulating structure of the present invention;
Fig. 4 is the cross-sectional view of an embodiment of White LED light-emitting device of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Just as described in the background section, in the led chip encapsulating structure of prior art, the reflection efficiency of base bottom is lower, and this causes adopting the light extraction efficiency of LED light-emitting device of described encapsulating structure on the low side.
The present inventor finds that for the substrate that forms described led chip, it adopts crystalline materials such as sapphire material, silicon usually, and described crystalline material has good reflecting properties.If the described crystalline material of employing is formed for the reflective of reflection ray between led chip and pedestal, then can effectively improve the light extraction efficiency of LED light-emitting device.Simultaneously, for described reflective, can on the direction of led chip taper reflection pit be set at it, described taper reflection pit also can improve the light reflection, and then makes the light extraction efficiency of whole LED light-emitting device further improve.
Based on above-mentioned discovery, the inventor provides a kind of encapsulating structure that is used for led chip, and a kind of White LED light-emitting device, and described led chip encapsulating structure and White LED light-emitting device make light extraction efficiency effectively improve by described reflective is set.
With reference to figure 2, show the cross-section structure of an embodiment of led chip encapsulating structure of the present invention.Be packaged with led chip in the described led chip encapsulating structure, comprised: led chip 201, reflective 203, pedestal 207, first pin 209, second pin 211 and cap layer 217, wherein,
Described led chip 201 is a light-emitting diode, and it includes first electrode 202 and second electrode 204.
Described reflective 203 is positioned at led chip 201 belows, described reflective 203 is formed with taper reflection pit 205 towards a side of led chip 201, and the open area of described taper reflection pit 205 is positioned at led chip 201 belows and occupies the subregion of reflective 203.The edge of described led chip 201 is equipped on the reflective 203, and most of zone of described led chip 201 then is suspended on the described taper reflection pit 205.In specific embodiment, described reflective 203 adopts materials such as sapphire material, silicon, carborundum to constitute.
Described pedestal 207 is used to carry reflective 203 and led chip 201, and described reflective 203 is embedded in the pedestal 207 and the surface of exposing a side; In specific embodiment, described pedestal 207 adopts metal materials such as copper, aluminium to constitute.
Described first pin 209 and second pin 211 are positioned at pedestal 207 both sides, wherein, described first pin 209 is electrically connected with first electrode 202 of led chip 201 by first lead-in wire 213, described second pin 211 directly links to each other with pedestal 207, and described pedestal 207 is electrically connected with second electrode 204 of led chip 201 by second lead-in wire 215.In specific embodiment, described first pin 209 and second pin 211 adopt the metal material identical with pedestal 207 to constitute, for example copper, aluminium etc.
Described led chip 201, reflective 203 and pedestal 207 are 217 covering of cap layer, and described cap layer 217 is hemispherical towards a side of led chip 201, and the cap layer 217 of described hemispherical structure is converging ray preferably; In specific embodiment, described cap layer 217 adopts resin material to constitute, and improves light and appear rate in protection led chip 201.
Fig. 3 is the schematic top plan view of an embodiment of led chip encapsulating structure of the present invention.As shown in Figure 3, described reflective 203 is arranged in pedestal 207, be formed with taper reflection pit 205 in the described reflective 203, described taper reflection pit 205 occupies the subregion that reflective 203 is exposed, and described taper reflection pit 205 outer reflective 203 are used to carry led chip 201.
According to the difference of specific embodiment, can include more than one taper reflection pit on the described reflective 203; Described taper reflection pit 205 is a del along the cross section of led chip 201 assembly directions, and (angle among Fig. 2 is that 35 degree are to 55 degree a) to the angle of the loading end of described taper reflection pit 205 inclined-planes and carrying led chip.
Next, in conjunction with Fig. 2 the operation principle of led chip encapsulating structure of the present invention is described.
As shown in Figure 2, the two end electrodes of led chip 201 is respectively by first pin 209 and second pin, 211 load driver voltages.Under the driving of described driving voltage, described led chip 201 operate as normal, emission light.
The light of described led chip 201 emissions is no particular orientation, promptly propagates to the space all directions.According to the direction with respect to reflective 203, the light of described led chip 201 emissions can be divided into both direction, promptly is respectively away from the direction of reflective 203 and the direction of directive reflective 203:
For to the light of propagating away from reflective 203 directions 220, it is launched after being assembled by the domed region of cap layer 217; And for the light of propagating to reflective 203 directions 221, because the reflection on described taper reflection pit 205 and reflective 203 surfaces, light can be propagated to the direction away from reflective 203 after reflection again.Simultaneously, because described led chip 201 is a transparent material, therefore, described light reflected still can see through led chip 201 and the continuation external communication to encapsulating structure.
As can be seen, led chip encapsulating structure compared to prior art, include taper reflection pit in the reflective that the present invention adopts, described taper reflection pit and reflective reflect back the light of directive pedestal, this part light is utilized again, thereby makes the light extraction efficiency of the led chip after encapsulating effectively improve.
For led chip and the reflective in the led chip encapsulating structure of the present invention, in actual applications, can adopt the bonding mode to realize the connection of these two parts.
Especially, for led chip, it adopts the method at semi-conducting materials such as Sapphire Substrate extension gallium nitride to form usually, and the described Sapphire Substrate that is used to form led chip can be used as reflective and uses.Accordingly, the manufacture method of the led chip of this structure and reflective structure can comprise:
On described Sapphire Substrate, form the LED tube core structure;
Described LED tube core structure is separated from Sapphire Substrate;
Adopt the method for anisotropic etch on described Sapphire Substrate, to form taper reflection pit;
With described LED tube core structure and Sapphire Substrate bonding;
With described Sapphire Substrate scribing, form led chip.
After scribing, each led chip all is connected with corresponding reflective, and described led chip and reflective can be packed in the pedestal simultaneously.
As can be seen, effectively utilized the Sapphire Substrate that forms the LED tube core structure, also improved the light extraction efficiency of led chip encapsulation back light-emitting device according to led chip and reflective that above-mentioned procedure of processing forms.
Based on led chip encapsulating structure of the present invention, the inventor also provides a kind of White LED light-emitting device, is provided with the reflective structure that comprises taper reflection pit in the described White LED light-emitting device, makes light extraction efficiency effectively improve.
Fig. 4 is the cross-sectional view of an embodiment of White LED light-emitting device of the present invention.
As shown in Figure 4, embodiment of described White LED light-emitting device comprises: led chip 401, reflective 403, pedestal 407, first pin 409, second pin 411 and cap layer 417, wherein,
Described led chip 401 adopts blue-light LED chip, and it includes first electrode 402 and second electrode 404; Wherein, described first electrode, 402 surface-coated have fluorescent material, for example YAG fluorescent material.Described blue-light LED chip 401 adopts epitaxial layer of gallium nitride to form, and described epitaxial layer of gallium nitride includes P type doped layer, mqw active layer and N type doped layer.
Described reflective 403 is positioned at led chip 401 belows, be connected with second electrode 404, described reflective 403 is formed with taper reflection pit 405 towards a side of led chip 401, the open area of described taper reflection pit 405 is positioned at led chip 401 belows, make the edge of described led chip 401 can be equipped on the reflective 403, most of zone of led chip 401 then is suspended on the described taper reflection pit 405.In specific embodiment, described reflective 403 adopts materials such as sapphire material, silicon, carborundum to constitute.
Described pedestal 407 is used to carry reflective 403 and led chip 401, and described reflective 403 is embedded in the pedestal 407; In specific embodiment, described pedestal 407 adopts metal materials such as copper, aluminium to constitute.
Described first pin 409 and second pin 411 are positioned at pedestal 407 both sides, wherein, described first pin 409 is electrically connected with first electrode 402 of led chip 401 by first lead-in wire 413, described second pin 411 directly links to each other with pedestal 407, and described pedestal 407 is electrically connected with second electrode 404 of led chip 401 by second lead-in wire 415; In specific embodiment, described first pin 409 and second pin 411 adopt the metal material identical with pedestal 407 to constitute, for example copper, aluminium etc.
Described led chip 401, reflective 403 and pedestal 407 are 417 covering of cap layer, and described cap layer 417 is hemispherical towards a side of led chip 401, and the cap layer 417 of described hemispherical structure is converging ray preferably; In specific embodiment, described cap layer 417 adopts resin material to form.
Load driver voltage on described led chip 401 two end electrodes and after launching blue light, after being subjected to this blue-light excited, sends by the YAG fluorescent material on led chip 401 first electrodes 402 surfaces the light of different colours, for example sodium yellow, ruddiness and green glow, gold-tinted and ruddiness, gold-tinted and green glow.The blue light part that described led chip 401 sends is absorbed by fluorescent material, and another part blue light mixes with the light that fluorescent material inspires, and can obtain white light.By chemical composition that changes YAG fluorescent material and the thickness of regulating phosphor powder layer, can obtain the of all kinds white light of colour temperature at 3500-10000K.
Simultaneously, for blue light by led chip 401 directive reflective 403, because the reflection of taper reflection pit 405 in the reflective 403, this part blue light can be propagated to the direction away from reflective 403 after reflection again, and further see through the external communication of led chip 401, cap layer 417, thereby make light extraction efficiency improve to encapsulating structure.
According to the difference of specific embodiment, the cross section of described taper reflection pit 405 is a del, and (angle among Fig. 4 is that 35 degree are to 55 degree a) to the angle of described taper reflection pit 405 inclined-planes and led chip 401 bottom surfaces (being loading end).
LED encapsulating structure of the present invention and white light emitting device have embedded the reflective that includes taper reflection pit in pedestal, described reflective and the reflection of taper wherein pit make and can reflect away to the light of pedestal from the led chip emission, thereby effectively improved light extraction efficiency.
Should be appreciated that example herein and embodiment only are exemplary, those skilled in the art can make various modifications and corrigendum under the situation of the spirit and scope of the present invention that do not deviate from the application and claims and limited.
Claims (13)
1. a led chip encapsulating structure is used for packaging LED chips, it is characterized in that, comprises reflective, pedestal and cap layer, wherein,
Described reflective is used to carry led chip, and its side that is used to carry led chip is formed with taper reflection pit;
Described reflective is embedded in the pedestal, and the surface of exposing a side at least is with the carrying led chip;
Described cap layer covers led chip and pedestal, and its side towards described led chip is hemispherical.
2. led chip encapsulating structure as claimed in claim 1 is characterized in that, described reflective adopts sapphire material, silicon, carborundum to form.
3. led chip encapsulating structure as claimed in claim 1 is characterized in that, is formed with more than one taper reflection pit in the described reflective.
4. led chip encapsulating structure as claimed in claim 1 is characterized in that, described taper reflection pit inclined-plane is that 35 degree are to 55 degree with the angle of the loading end of carrying led chip.
5. led chip encapsulating structure as claimed in claim 1 is characterized in that, the surface of described taper reflection pit is formed with anti-reflecting layer.
6. a White LED light-emitting device is characterized in that, comprises led chip, reflective, pedestal and cap layer, wherein,
Described reflective is positioned at the led chip below, described reflective is formed with taper reflection pit towards a side of led chip, the open area of described taper reflection pit is positioned at the led chip below, described led chip is suspended on the described taper reflection pit, and described led chip is coated with fluorescent material away from the one side of reflective;
Described pedestal is used to carry reflective and led chip, and described reflective is embedded in the pedestal;
Described led chip, reflective and pedestal are the cap layer and cover, and described cap aspect is hemispherical to a side of led chip.
7. White LED light-emitting device as claimed in claim 6, it is characterized in that, described led chip is a blue-light LED chip, and described blue-light LED chip adopts gallium nitride material to form, and described gallium nitride material includes P type doped layer, mqw active layer and N type doped layer.
8. White LED light-emitting device as claimed in claim 7 is characterized in that, described fluorescent material is for containing YAG fluorescent material.
9. White LED light-emitting device as claimed in claim 8 is characterized in that, described YAG fluorescent material is for containing Ce
3+Fluorescent material.
10. White LED light-emitting device as claimed in claim 6 is characterized in that, described reflective adopts sapphire material, silicon, carborundum to form.
11. White LED light-emitting device as claimed in claim 6 is characterized in that, the surface of described taper reflection pit is formed with anti-reflecting layer.
12. White LED light-emitting device as claimed in claim 6 is characterized in that, is formed with more than one taper reflection pit in the described reflective.
13. White LED light-emitting device as claimed in claim 6 is characterized in that, described taper reflection pit inclined-plane is that 35 degree are to 55 degree with the angle of the loading end of carrying led chip.
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| CN 201010503757 CN102130271A (en) | 2010-09-28 | 2010-09-28 | LED (light-emitting diode) chip packaging structure and white light LED light-emitting device |
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Cited By (1)
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| CN103545425A (en) * | 2013-10-29 | 2014-01-29 | 广西桂林宇川光电科技有限公司 | LED component and manufacturing method thereof |
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| US20070272930A1 (en) * | 2006-05-26 | 2007-11-29 | Huan-Che Tseng | Light-emitting diode package |
| CN101197410A (en) * | 2006-12-04 | 2008-06-11 | 三垦电气株式会社 | Semiconductor light-emitting device and manufacturing method thereof |
| US20080149959A1 (en) * | 2006-12-11 | 2008-06-26 | The Regents Of The University Of California | Transparent light emitting diodes |
| US20090186435A1 (en) * | 2008-01-22 | 2009-07-23 | Nien-Tze Yeh | Surface roughening method for light emitting diode substrate |
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Patent Citations (5)
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| CN1742381A (en) * | 2002-12-20 | 2006-03-01 | 昭和电工株式会社 | Light-emitting device, method of fabricating the device, and LED lamp using the device |
| US20070272930A1 (en) * | 2006-05-26 | 2007-11-29 | Huan-Che Tseng | Light-emitting diode package |
| CN101197410A (en) * | 2006-12-04 | 2008-06-11 | 三垦电气株式会社 | Semiconductor light-emitting device and manufacturing method thereof |
| US20080149959A1 (en) * | 2006-12-11 | 2008-06-26 | The Regents Of The University Of California | Transparent light emitting diodes |
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Application publication date: 20110720 |