CN102117882B - Method for reducing operation power consumption of phase change memory unit - Google Patents
Method for reducing operation power consumption of phase change memory unit Download PDFInfo
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- CN102117882B CN102117882B CN 201010022441 CN201010022441A CN102117882B CN 102117882 B CN102117882 B CN 102117882B CN 201010022441 CN201010022441 CN 201010022441 CN 201010022441 A CN201010022441 A CN 201010022441A CN 102117882 B CN102117882 B CN 102117882B
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Abstract
The invention relates to a method for reducing unit operation power consumption of a phase change memory, comprising the following steps of: (1) coating a BaTiO3 or SrTiO3 dielectric thin film on a SiO2/Si substrate; (2) annealing the SiO2/Si substrate coated with the dielectric thin film in the step (1) to obtain a SiO2/Si substrate with a buffer layer; and (3) coating GST phase change material on the SiO2/Si substrate which is provided with the buffer layer and prepared in step (2)and packaging into a phase change memory device. In the invention, the dielectric substance with a perovskite structure serves as the buffer layer and the unit operation voltage of the phase change memory can be effectively reduced, and therefore, the power consumption can be reduced.
Description
Technical field
The invention belongs to electronic functional material and devices field, be specifically related to a kind of dielectric that adopts and operate the method for power consumption as resilient coating to reduce phase-changing memory unit, this method satisfies the specification requirement of silicon integrated technique fully.
Background technology
Phase transition storage (PCM) mainly is to utilize some material can have quick and reversible phase change effect under the particular current pulse, and then cause the stable change Come of material on some characteristic to reach the storage effect, its final state can't change along with the disappearance of external energy in addition, therefore has nonvolatile characteristics.The PCM technology relies on that it reads in reading speed, reliability, non-destructive, the advantage aspect non-volatile, size microminiaturization and the cost, and being acknowledged as the traditional DRAM technology of the most potential replacement and Flash flash memory technology becomes one of memory technology of main flow.The most ripe phase-change material that adopts at present is Ge
2Sb
2Te
5(GST) alloy, the most common phase-changing memory unit (PCM cell) structure is for being the T type structure of heating electrode with W.But in traditional T type structure, the W electrode directly contacts with phase-change material, and W has very high thermal conductivity (174W/mK), so high thermal conductivity causes heat in a large number to diffusion all around on the one hand, the heat energy utilization rate is not high, people's such as S.M.Sadeghipour calculating finds that the real energy that is used for phase transformation only accounts for 0.2～1.4% (S.M.Sadeghipour of gross energy, L.Pileggi, and M.Asheghi, Phase Change Random Access Memory, Thermal Analysis, The TenthIntersociety Conference on ITHERM (IEEE), New York, 2006,660-665); Can't well assemble heat at the interface between electrode and the phase-change material on the other hand, causing the zone that temperature is the highest in the phase-change material is not to concentrate at the interface, but be in the upper end of electrode, this mode of heating will cause the appearance in " crystallization corridor ", for eliminating " crystallization corridor " to the influence of entire device RESET attitude resistance, extra power consumption certainly will to be consumed.
Along with the day by day increase of IT industry to the phase transition storage product demand, realization PCM cell and existing CMOS technology are integrated to be very crucial, therefore, also just is badly in need of further reducing the operation power consumption of PCM cell.At present, the main method that reduces operating current/voltage of PCM cell has: (1) improvement device architecture reduces the contact area between phase-change material and the electrode; (2) size of optimization phase-change thin film layer and electrode; (3) phase-change material exploitation and doping vario-property, thus improve from heating efficiency reduction operating current as reducing the phase-change material fusing point or increasing resistance; (4) implant the auxiliary device heats efficient that improves of other material heating medium, reduce power consumption.Wherein, implanting very thin one deck zone of heating between end W electrode and phase-change material, to have a processing procedure with the method for temperature in the rising phase-change material layers easy, workable and do not need to change the characteristics of traditional T type structure.And concentrate in a large number on some metal oxides or the nitrogen oxide for the research of zone of heating material at present, as document M.H.Jang et al.StructuralStability and Phase-Change Characteristics of Ge
2Sb
2Te
5/ SiO
2Nano-Multilayered Films, Electrochemical and Solid-State Letters, 2009,12 (4), the disclosed SiO of H151-H154
2Document C.Xu, Z.Song, B.Liu, S.Feng, and B.Chen, Lower current operation of phase change memory cell with a thinTiO
2Layer, Appl.Phys.Lett.2008,92,062103 disclosed TiO
2Document Y. Matsui et al.Ta2O5 InterfacialLayer between GST and W Plug enabling Low Power Operation of Phase Change Memories, Tech.Dig.Int.Electron Devices Meet.2006, the disclosed Ta of 769-772
2O
5Document P.K.Wong, J.E.Evetts, and M.G. Blamire, High conductance magnetoresistive tunnel junctions with multiply oxidized barrier, J.Appl.Phys.1998, the disclosed Al of 83,6697-6699
2O
3Document D.H.Kang et al.Voltage Operation of a PhaseChange Memory Device with a ighly Resistive TiON Layer, Jpn.J.Appl.Phys.2004, Part 2 (43), the disclosed TiON of 5243-5244 etc., these materials have low thermal conductivity (1-2W/mK magnitude) and higher resistivity (0.01-1 Ω cm magnitude), can reduce the thermal diffusion phenomenon effectively and improve heat production efficient, but these zone of heating material require better controlled thickness cause interfacial effect to lose efficacy to prevent breakdown.Therefore further seeking new zone of heating material system is very necessary with the operation power consumption that reduces PCM cell.
By selecting suitable zone of heating material to optimize the importance that PCM cell operation power consumption is present phase transition storage research, existing in a large number about adopting the research report of metal oxide and oxymtride material at present.Yet, adopt the dielectric substance with perovskite structure, as BaTiO
3, SrTiO
3Deng research do not appear in the newspapers as yet.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, provide a kind of dielectric that adopts to reduce the method that phase-changing memory unit is operated power consumption as resilient coating, can enough in phase-change memory device, obtain practical application.
The present inventor finds to select for use the dielectric substance (BaTiO with perovskite structure through a large amount of experimental studies
3, SrTiO
3) as cushioning layer material, make phase-change memory device and obviously reduce than the device operation voltage that does not adopt cushioning layer material, reduced the operation power consumption of entire device effectively, be applicable to the development and use of phase-change memory device.
The present invention is achieved through the following technical solutions:
A kind of method that reduces phase-changing memory unit operation power consumption comprises the steps:
(1) at SiO
2Apply BaTiO on the/Si substrate
3Or SrTiO
3Thin dielectric film;
(2) with the SiO that is coated with thin dielectric film for preparing in the step (1)
2/ Si substrate annealing in process makes the SiO with resilient coating
2/ Si substrate;
(3) SiO with resilient coating of preparation in step (2)
2On/Si the substrate, apply the GST phase-change material, and be packaged into phase-change memory device.
The thickness of thin dielectric film is 5～15nm described in the step (1), is preferably 10nm.
Described SiO
2The SiO of/Si substrate for handling through photoetching process
2/ Si substrate, the method that applies thin dielectric film is magnetron sputtering method, sputtering power is made as 15～30W during coating, is preferably 20W.
Aerating oxygen and argon gas when adopting described magnetron sputtering method to apply thin dielectric film, and oxygen partial pressure is 0.1～1: 1～3 with the partial pressure of ar gas ratio, is preferably 1: 3.
Described SiO
2/ Si substrate carries out annealing in process after applying thin dielectric film in oxygen atmosphere, annealing time is 5～15min, is preferably 10min, and annealing temperature is 350～500 ℃, is preferably 400 ℃.
The GST phase-change material thickness that applies in the step (3) is 100～200nm, is preferably 150nm.
Beneficial effect of the present invention: utilization of the present invention has the dielectric substance (BaTiO of perovskite structure
3, SrTiO
3) as resilient coating, can effectively reduce the phase-changing memory unit operating voltage, thus the operation power consumption of entire device reduced, be applicable to the development and use of phase-change memory device.
Description of drawings
Fig. 1 is the T type PCMcell structural representation that contains resilient coating.
Fig. 2 is that the resistive memory cell of Reset operation of phase-change memory device is with the change curve of operating voltage.
Fig. 3 be in the phase-change memory device electric current with the change curve of voltage.
Embodiment
Embodiment 1
Adopt BaTiO in the phase-change memory device
3As resilient coating.
A, the SiO of employing magnetron sputtering method after handling through photoetching process
2Preparation thickness is the BaTiO of 10nm on the/Si substrate
3Film, sputtering power is 20W, aerating oxygen and argon gas during sputter, and oxygen partial pressure is 1: 3 with the partial pressure of ar gas ratio.
B, with the BaTiO for preparing
3Film is annealing in process 10min in oxygen atmosphere, and annealing temperature is 400 ℃, obtains final cushioning layer material.
C, be coated with the SiO of cushioning layer material
2On/Si the substrate, adopting magnetron sputtering method to prepare thickness is the GST phase-change material of 150nm, and is packaged into phase-change memory device.
Embodiment 2
Adopt SrTiO in the phase-change memory device
3As resilient coating.
A, the SiO of employing magnetron sputtering method after handling through photoetching process
2Preparation thickness is the SrTiO of 10nm on the/Si substrate
3Film, sputtering power is 20W, aerating oxygen and argon gas during sputter, and oxygen partial pressure is 1: 3 with the partial pressure of ar gas ratio.
B, with the SrTiO for preparing
3Film is annealing in process 10min in oxygen atmosphere, and annealing temperature is 400 ℃, obtains final cushioning layer material.
C, be coated with the SiO of cushioning layer material
2On/Si the substrate, adopting magnetron sputtering method to prepare thickness is the GST phase-change material of 150nm, and is packaged into phase-change memory device.
The test of current-voltage performance is to adopt the Agilent-81104A pulse signal generator to export specific potential pulse in resistance-voltage in the phase-change memory device reset process and the set process, and use the numerical value of Keithley-2400 digital source table record resistance or electric current, obtain resistance respectively with the change curve of voltage and the electric current change curve with voltage.The pulsewidth of Fig. 2 and potential pulse employed in figure 3 is 50ns.Because in phase transition storage, needed potential pulse and needs to eliminate the influence in " crystallization corridor " than the height of set process in the reset process in the reset process, and therefore we mainly pay close attention to the reduction of voltage in the reset operation aspect reducing power consumption.Fig. 2 represents be the resistance of device in the reset operating process with the change curve of voltage, clearly, do not add the reset voltage of device of resilient coating greatly about 3.5V, with SrTiO
3With BaTiO
3Reset voltage as the device of resilient coating has had obvious reduction, is about 2.5V and 2.2V respectively.And the electric current of set process is with in the change in voltage curve from Fig. 3, and we find with SrTiO
3With BaTiO
3Threshold voltage as the set operation of the device of resilient coating also has bigger reduction than the device that does not add resilient coating.The data of comprehensive two aspects, we judge that utilization has the dielectric substance (BaTiO of perovskite structure
3, SrTiO
3) as resilient coating, can effectively reduce the phase-changing memory unit operating voltage, thus the operation power consumption of entire device reduced.
Claims (4)
1. a method that reduces phase-changing memory unit operation power consumption is characterized in that, comprises the steps:
(1) at SiO
2Apply BaTiO on the/Si substrate
3Or SrTiO
3Thin dielectric film;
(2) with the SiO that is coated with thin dielectric film for preparing in the step (1)
2/ Si substrate annealing in process makes the SiO with resilient coating
2/ Si substrate;
(3) SiO with resilient coating of preparation in step (2)
2On/Si the substrate, apply the GST phase-change material, and be packaged into phase-change memory device;
The thickness of thin dielectric film is 5～15nm described in the step (1);
Described SiO
2The SiO of/Si substrate for handling through photoetching process
2/ Si substrate, the method that applies thin dielectric film is magnetron sputtering method, sputtering power is made as 15～30W during coating.
2. the method for reduction phase-changing memory unit operation power consumption according to claim 1 is characterized in that, aerating oxygen and argon gas when adopting described magnetron sputtering method to apply thin dielectric film, and oxygen partial pressure is 0.1～1:1～3 with the partial pressure of ar gas ratio.
3. the method for reduction phase-changing memory unit operation power consumption according to claim 1 is characterized in that described SiO
2/ Si substrate carries out annealing in process after applying thin dielectric film in oxygen atmosphere, annealing time is 5～15min, and annealing temperature is 350～500 ℃.
4. the method for reduction phase-changing memory unit operation power consumption according to claim 1 is characterized in that the GST phase-change material thickness that applies in the step (3) is 100～200nm.
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| CN101110464A (en) * | 2007-08-01 | 2008-01-23 | 中国科学院上海微***与信息技术研究所 | Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method |
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Patent Citations (5)
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| CN101226990A (en) * | 2008-02-04 | 2008-07-23 | 中国科学院上海微***与信息技术研究所 | Oxide heat insulation layer for reducing phase-change memory cell power consumption and implementation method thereof |
| CN101267016A (en) * | 2008-02-15 | 2008-09-17 | 中国科学院上海微***与信息技术研究所 | Improved phase change memory unit component structure |
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