CN102117767A

CN102117767A - Fully transparent TFT (Thin Film Transistor) active matrix manufacturing method based on colloidal sol mode

Info

Publication number: CN102117767A
Application number: CN2010106106406A
Authority: CN
Inventors: 陈龙龙; 李喜峰; 张建华; 王赛
Original assignee: University of Shanghai for Science and Technology
Current assignee: University of Shanghai for Science and Technology
Priority date: 2010-12-29
Filing date: 2010-12-29
Publication date: 2011-07-06

Abstract

The invention relates to a fully transparent TFT (Thin Film Transistor) active matrix manufacturing method based on colloidal sol mode. In the active matrix manufacturing method, colloidal sol is transferred to a glass substrate by adopting the method of colloidal sol spin coating; and a gate electrode layer, an insulating layer, an active layer, a source draining electrode layer and a protective layer of a TFT active matrix are directly and graphically transferred by photo-etching. The active matrix manufacturing method has simple manufacturing process, reduces the technical procedures of wet etching and the like, saves the technical procedures of dry etching and the like, does not need investment of large-size film forming equipments for CVD (chemical vapor deposition), PVD (physical vapor deposition) and the like, and greatly saves the investment of technical equipments and technical manufacturing cost; and the manufactured TFT active array are fully transparent, and the aperture opening ratio is increased.

Description

Based on the bright tft active matrix manufacture method of colloidal sol formula full impregnated

Technical field

The present invention relates to a kind of panel display screen and make the manufacture method in field, a kind of specifically manufacture method based on the bright TFT of colloidal sol formula full impregnated (thin-film transistor) active matrix adopts the making of the bright tft active matrix of manufacture method realization full impregnated of colloidal sol spin coating.

Background technology

The English full name of TFT is Thin Film Transistor, and looking like is thin-film transistor.Existing tft active matrix adopts following manufacturing process flow (see figure 1): at first cleaning sputter bottom gate metal level on the clean TFT glass substrate, by photoetching process the bottom gate metallic layer graphic is handled, obtained the figure of bottom gate thin film; Next deposition insulating layer, active layer and ohmic contact layer successively on the bottom gate metal level after graphical; Again ohmic contact layer is made graphical treatment, the ohmic contact layer at TFT raceway groove place is etched away, but the ohmic contact layer at reservation source, drain electrode place; The electrode layer of sputter layer of metal more at last obtains source, the drain electrode of tft active matrix after the graphical treatment.The film growth of the tft active matrix of this kind technology need have the input of process equipments such as PVD, CVD on glass substrate, manufacturing process complexity, technological requirement are very high, and the part manufacture craft needs to make under the high temperature, processing, and the technology beat is low, the manufacturing cost height.

The present invention adopts the manufacturing materials of colloidal sol formula reagent as tft active matrix; mode by spin coating is transferred to colloidal sol on the glass substrate; utilize the mode of photoetching directly to realize the grid electrode layer of tft active matrix; insulating barrier; active layer; the graphical transfer of source-drain electrode layer and protective layer; adopt the tft active matrix manufacturing process of this method simple; processing steps such as wet quarter have been reduced; processing steps such as dried quarter have been saved; and the input that does not need large-scale film-forming apparatus such as CVD and PVD; significantly saved process equipment; the input of technology manufacturing cost; and the tft active matrix of making is the full impregnated Ming Dynasty style, and aperture opening ratio increases.

Summary of the invention

The objective of the invention is provides a kind of based on the bright tft active matrix manufacture method of colloidal sol formula full impregnated at the defective that oneself has technology to exist, this method adopts the mode of colloidal sol spin coating, photoetching, development, directly realize grid, insulating barrier, the source electrode of tft active matrix, the graphic making of drain electrode, processing technology is simple, and can significantly improve the aperture opening ratio of device.

For achieving the above object, the present invention adopts following technical scheme:

A kind ofly it is characterized in that adopt the mode of colloidal sol spin coating to realize the making of grid electrode layer, active layer, source-drain electrode layer and the protective layer of tft active matrix, its manufacturing technology steps is as follows based on the bright tft active matrix manufacture method of colloidal sol formula full impregnated:

1) utilizes spin coater cleaning spin coating grid sol material on the clean glass substrate, the grid sol material is evenly distributed on the glass substrate; Baking was solidified before sol material all carried out, and carried out exposure photo-etching afterwards and handled, and developed, the back baking, obtained gate patterns;

2) spin coating one deck organic insulating film dries by the fire before the heating as insulating barrier, exposure, development, back baking, thereby the transfer of realization insulating barrier figure;

3) spin coating constitutes the sol material of active layer, carries out preceding baking, exposure, development, back baking afterwards, the wet etching active layer, thus realize the preparation of active layer material and the transfer of active layer figure;

4) spin coating constitutes the sol material of source-drain electrode layer, and baking, exposure before doing, develop, the back baking, with the figure transfer of source electrode, drain electrode on substrate;

5) spin coating constitutes the sol material of protective layer, after preceding baking, exposure, development, back baking, produces contact hole, thereby contact hole graph is transferred on the substrate.

So far, the bright tft active matrix manufacturing process of colloidal sol formula full impregnated of the present invention is finished.

The present invention has following conspicuous outstanding substantive distinguishing features and remarkable advantage compared with prior art:

The tft active matrix of manufacturing of the present invention be full impregnated bright, the manufacturing of colloidal sol formula method, manufacture craft is simple, and the input of equipment is required low, the tft active matrix aperture opening ratio of manufacturing increases.

Description of drawings

Fig. 1 tradition tft active matrix manufacture process flow diagram;

Fig. 2 the present invention is based on the bright tft active matrix manufacturing approach craft of colloidal sol formula full impregnated FB(flow block);

The structural representation of tft active matrix in Fig. 3-bright tft active matrix manufacturing process flow of Figure 12 colloidal sol formula full impregnated.

Embodiment

Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described:

Embodiment 1: referring to Fig. 2, the present invention is based on the bright tft active matrix manufacture method of colloidal sol formula full impregnated, adopts the mode of spin coater spin coating that colloidal sol evenly is applied on the substrate, and directly realize the graphic making of each tunic by the mode of photoetching, development,

Thereby realize the manufacturing of tft active matrix.

At first cleaning even coating one deck ITO dissolved glue film 21 on the clean glass substrate 10, wherein ITO dissolved glue film 21 is a light-sensitive material; With ITO dissolved glue film 21 be placed on hot plate go forward the baking after, to its exposure, development, warm baking-curing on the plate after being placed on, grid electrode layer 20 completes; Next step evenly is coated with a layer insulating organic membrane 31, do exposure, development after the preceding baking, and back baking curing is made into insulating barrier 30; Evenly coating one deck IGZO dissolved glue film 41, through after the technologies such as preceding baking, exposure, development, back baking, realize the transfer of active layer 40 figures equally; At last, be coated with source-drain electrode layer 50 on active layer 40, adopt ITO dissolved glue film 51, technologies such as preceding once more baking, exposure, development, back baking are made into source electrode 52 and drain electrode 53; Be coated with a layer insulating organic membrane 61 once more as protective layer 60, after preceding baking, photoetching, development, the back baking, form contact hole 62.

Of the present invention based on colloidal sol formula full impregnated bright tft active matrix manufacturing finish.

Embodiment 2: present embodiment is substantially the same manner as Example 1, and special feature is: referring to Fig. 2, choose the glass substrate 10 of the glass substrate of 200mm ' 200mm as the bright tft active matrix manufacturing of colloidal sol formula full impregnated; The preparation material composition of ITO dissolved glue film 21 comprises: trimethoxy butyl acetate, 1-Methoxy-2-propyl acetate, viscosity are 13 ~ 15cP; IGZO dissolved glue film 41 is to be dissolved in the ammoniacal liquor zinc acetate dihydrate, gallium nitrate hydrate, indium nitrate hydrate formulated.

Referring to Fig. 3 and Fig. 4, at first even coating thickness is the ITO dissolved glue film 21 of 300nm on glass substrate 10, and ITO dissolved glue film 21 is a photosensitive material, and directly photoetching development is made; ITO dissolved glue film 21 is placed on the hot plate, and baking is 12 minutes under 120 ℃ of situations, exposes under the gate electrode mask plate afterwards, and exposure dose is 250mJ/cm ^-2, be positioned in the developer solution develop, clean, dry up after, again under 220 ℃ the baking 60 minutes, make ITO dissolved glue film 21 full solidification, grid electrode layer 20 completes.

Referring to Fig. 5 and Fig. 6, the insulating barrier organic membrane 31 that even coating one layer thickness is 200nm on the grid electrode layer 20 is as insulating barrier, and the material of selecting for use among the present invention is JSR PC405G, and it is a photosensitive material; 90 ℃ of preliminary dryings 60 seconds, photoetching treatment afterwards, exposure dose is 100 mJ/cm ^-2, develop again, clean, dry up, be positioned under 220 ℃ and toasted 60 minutes, make insulating barrier organic membrane 31 full solidification, insulating barrier 30 completes.

Referring to Fig. 7 and Fig. 8, evenly being coated with a layer thickness on the insulating barrier 30 is the IGZO dissolved glue film 41 of 300nm, and heated baking is 60 minutes under 180 ℃ of temperature, and active layer completes; Afterwards at its surface coated photoresist, through preceding baking, exposure, development, clean, dry up, after the processing step such as back baking, it carried out wet etching, utilize IGZO etching liquid etching, obtain active layer 40 figures, carry out demoulding afterwards again, clean, dry up, active layer 40 completes.

Referring to Fig. 9 and Figure 10, be coated with ITO dissolved glue film 51 once more, coating thickness is 200nm, ITO dissolved glue film 51 is placed on the hot plate, and baking is 12 minutes under 120 ℃ of situations, after overexposure, development, cleaning, dry up, under 220 ℃, toasted 60 minutes again, make ITO dissolved glue film 51 full solidification; Obtain source electrode 52 and drain electrode 53 figures after the photoetching; Source-drain electrode layer 50 completes.

Referring to Figure 11 and Figure 12; being coated with a layer thickness is the insulating barrier organic membrane 61 of 300nm; adopt with insulating barrier 30 identical materials and process conditions and make; mask plate adopts the contact hole mask plate to make; through expose, develop, clean, dry up, after the baking after; form contact hole 62 figures, protective layer 60 completes.

So far, finish based on the manufacturing process of the bright tft active matrix of colloidal sol formula full impregnated.

Claims

1. one kind based on the bright tft active matrix manufacture method of colloidal sol formula full impregnated, it is characterized in that adopting the mode of colloidal sol spin coating to realize the making of grid electrode layer (20), insulating barrier (30), active layer (40), source-drain electrode layer (50) and the protective layer (60) of tft active matrix, its manufacturing process steps is as follows: 1) utilize spin coater cleaning upward spin coating grid sol material of clean glass substrate (10), the grid sol material is evenly distributed on the glass substrate (10); Baking was solidified before sol material all carried out, and carried out exposure photo-etching afterwards and handled, and developed, the back baking, obtained grid electrode layer (20) figure; 2) spin coating one deck insulate organic membrane (31) as insulating barrier (30), dries by the fire exposure, development, back baking, thereby the transfer of realization insulating barrier (30) figure before the heating; 3) spin coating constitutes active layer (40) sol material, carries out preceding baking, exposure, development, back baking afterwards, wet etching active layer (40), thus realize the preparation of active layer material and the transfer of active layer (40) figure; 4) spin coating constitutes source-drain electrode layer (50) sol material, and baking, exposure before doing, develop, the back baking, with the figure transfer of source electrode, drain electrode on substrate; 5) organic material of spin coating protective layer (60) after preceding baking, exposure, development, back baking, is produced contact hole (62), thereby contact hole graph is transferred on the substrate.