CN102104112A - Method for preparing organic field-effect transistor in top-contact structure - Google Patents
Method for preparing organic field-effect transistor in top-contact structure Download PDFInfo
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- CN102104112A CN102104112A CN2009103118470A CN200910311847A CN102104112A CN 102104112 A CN102104112 A CN 102104112A CN 2009103118470 A CN2009103118470 A CN 2009103118470A CN 200910311847 A CN200910311847 A CN 200910311847A CN 102104112 A CN102104112 A CN 102104112A
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Abstract
The invention discloses a method for preparing an organic field-effect transistor in a top-contact structure, which belongs to the technical field of microelectronics. The method comprises the following steps of: preparing an insulated dielectric layer on a conductive substrate; depositing and growing an organic semiconductor film on the surface of the insulated dielectric layer; depositing and growing an insulated protective layer on the surface of the organic semiconductor film; spin-coating a photoresist and forming source and drain patterns of the organic field-effect transistor by exposing on the surface of the protective layer; etching the protective layer by taking the photoresist as a mask; and depositing and growing metal and peeling to form a source and a drain. In the method, an organic semiconductor material is deposited and grown on the surface of the insulated dielectric layer; then the organic insulated dielectric layer is spin-coated; an organic semiconductor layer is covered by the organic insulating layer; subsequent processes do not influence the organic semiconductor layer; in addition, the method has a simple process, high repeatability and high stability.
Description
Technical field
The present invention relates to the microelectronics technical field, particularly relate to a kind of preparation method of top contact structure organic field effect tube.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work.People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life.Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic integration circuit engineering based on semi-conducting materials such as organic polymer, organic molecules that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.Improve performance, stability and the rate of finished products of organic semiconductor device, be the target that pursue in this field always.
In the process of research organic field effect tube performance, it is found that top contact has more performance than the field-effect transistor of end contact structures, but because the sensitiveness of organic semiconducting materials, the electrode of top contact structure is generally by the hollow mask electrode growth, and is incompatible with integrated circuit technology.
Summary of the invention
In order to improve the stability of preparation organic field effect tube, the invention provides a kind of preparation method of top contact structure organic field effect tube.
Described technical scheme is as follows:
The preparation method of top contact structure organic field effect tube of the present invention comprises the following steps:
Steps A: deposition growing dielectric film on conductive substrates;
Step B: deposition growing organic semiconductor thin-film on described dielectric film surface;
Step C: deposition growing one deck dielectric protective layer on described organic semiconductor thin-film;
Step D:, obtain the figure of source-drain electrode by photoetching at described dielectric protective layer surface spin coating photoresist protective layer;
Step e: with the photoresist is protective layer, and etching graph area dielectric protective layer forms the source-drain electrode figure;
Step F:, form source-drain electrode at leakage graphic district, described source deposition growing metal level.
The preparation method of top contact structure organic field effect tube of the present invention,, in described steps A, described conductive substrates adopts the gate electrode of the electric conducting material of low-resistivity as organic field effect tube.
The preparation method of top contact structure organic field effect tube of the present invention, described steps A is specially: adopt thermal oxide growth method, chemical gaseous phase depositing process or spin-coating film method, deposition growing dielectric film on conductive substrates.
The preparation method of top contact structure organic field effect tube of the present invention, described step B is specially: adopt the method for vacuum thermal evaporation, deposition growing organic semiconductor thin-film on described dielectric film surface.
The preparation method of top contact structure organic field effect tube of the present invention, described step C is specially: adopt the method for spin-coating film, deposition growing one deck dielectric protective layer on described organic semiconductor thin-film.
The preparation method of top contact structure organic field effect tube of the present invention, the step that obtains the source-drain electrode figure by photoetching among the described step D is specially: adopt optical lithography or electronic beam photetching process, obtain the figure of source-drain electrode.
The preparation method of top contact structure organic field effect tube of the present invention, the step of etching graph area dielectric protective layer is specially in the described step e: adopt dry etching figure district dielectric protective layer.
The preparation method of top contact structure organic field effect tube of the present invention, described step F is specially: adopt the method for metal vaporizing technique or magnetron sputtering, at leakage graphic district, described source deposition growing metal level, form source-drain electrode.
The beneficial effect of technical scheme provided by the invention is: the invention provides that a kind of technology is simple, good reproducibility, the method for preparing the top contact structure organic field effect tube that stability is high; The present invention is by the organic semiconducting materials of growing at the insulating medium layer surface deposition, and spin coating growth organic insulating medium layer makes organic semiconductor layer be covered by organic insulator again, and subsequent technique can not exert an influence to organic semiconductor layer.
Description of drawings
Fig. 1 is preparation method's flow chart of the top contact structure organic field effect tube that provides of the embodiment of the invention;
Fig. 2-Fig. 9 is the preparation principle schematic diagram of the top contact structure organic field effect tube that provides of the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
The embodiment of the invention adopts photoetching process to prepare the top contact structure organic field effect tube, obtains the top contact structure organic field effect tube through twice insulating medium layer deposition growing, an organic semiconductor thin-film deposition growing, a photoetching, a dry etching and an evaporation of metal.
Referring to Fig. 1-Fig. 9, the embodiment of the invention provides a kind of preparation method of top contact structure organic field effect tube, may further comprise the steps:
Step 10: deposition growing dielectric film 2 on conductive substrates 1;
The method of deposition growing dielectric film 2 can adopt the technology of thermal oxide growth or the method growth inorganic insulation dielectric film of chemical vapour deposition (CVD), also can adopt the method growth organic insulation dielectric film of spin-coating film; Conductive substrates 1 can adopt the gate electrode of the electric conducting material of low-resistivity as organic field effect tube; Adopt the thick silicon dioxide insulator dielectric film 2 of technology growth 300nm of thermal oxide growth in the present embodiment on conductive substrates 1 surface;
Step 20: deposition growing organic semiconductor thin-film 3 on dielectric film 2 surfaces;
The method that adopts vacuum thermal evaporation in the present embodiment is at silicon dioxide insulator dielectric film 2 surface vacuums deposition CuPc organic semiconductor thin-film 3;
Step 30: deposition growing one deck dielectric protective layer 4 on organic semiconductor thin-film 3;
At the surperficial spin coatings growth of CuPc organic semiconductor thin-film 3 PVP dielectric protective layers 4, and in baking oven, anneal in the present embodiment;
Step 40: at dielectric protective layer 4 surperficial spin coating photoresist protective layers 5;
At PVP dielectric protective layer 4 surperficial spin coating AZ9918 photoresists, and carry out preceding baking in the present embodiment with hot plate or baking oven;
Step 50: the figure that obtains source-drain electrode by photoetching;
This step can adopt optical lithography or electronic beam photetching process, obtains the figure of source-drain electrode on photoresist protective layer 5, and obtains the photoresist figure of source-drain electrode by the optical exposure and the back of developing;
Step 60: with the photoresist protective layer 5 after developing is the masking protection layer, and the method for employing plasma etching etches away the PVP dielectric protective layer 4 of graph area, forms the source-drain electrode figure;
Step 70: with the photoresist protective layer 5 after developing for sheltering, at graph area deposition growing source metal layer drain electrode 6;
Deposition growing source metal layer drain electrode 6 can adopt the method for metal vaporizing technique or magnetron sputtering;
Step 80: adopt organic solvent, remove remaining photoresist as acetone or alcohol.
Promptly can prepare the organic field effect tube of top contact structure by said method.The embodiment of the invention is at insulating medium layer surface deposition growth organic semiconducting materials, and spin coating growth organic insulating medium layer makes organic semiconductor layer be covered by organic insulator again, and subsequent technique can not exert an influence to organic semiconductor layer.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the preparation method of a top contact structure organic field effect tube is characterized in that, described method comprises the following steps:
Steps A: deposition growing dielectric film on conductive substrates;
Step B: deposition growing organic semiconductor thin-film on described dielectric film surface;
Step C: deposition growing one deck dielectric protective layer on described organic semiconductor thin-film;
Step D:, obtain the figure of source-drain electrode by photoetching at described dielectric protective layer surface spin coating photoresist protective layer;
Step e: with the photoresist is protective layer, and etching graph area dielectric protective layer forms the source-drain electrode figure;
Step F:, form source-drain electrode at leakage graphic district, described source deposition growing metal level.
2. the preparation method of top contact structure organic field effect tube according to claim 1 is characterized in that, in described steps A, described conductive substrates adopts the gate electrode of the electric conducting material of low-resistivity as organic field effect tube.
3. the preparation method of top contact structure organic field effect tube according to claim 1, it is characterized in that, described steps A is specially: adopt thermal oxide growth method, chemical gaseous phase depositing process or spin-coating film method, deposition growing dielectric film on conductive substrates.
4. the preparation method of top contact structure organic field effect tube according to claim 1 is characterized in that, described step B is specially: adopt the method for vacuum thermal evaporation, deposition growing organic semiconductor thin-film on described dielectric film surface.
5. the preparation method of top contact structure organic field effect tube according to claim 1 is characterized in that, described step C is specially: adopt the method for spin-coating film, deposition growing one deck dielectric protective layer on described organic semiconductor thin-film.
6. the preparation method of top contact structure organic field effect tube according to claim 1, it is characterized in that, the step that obtains the source-drain electrode figure by photoetching among the described step D is specially: adopt optical lithography or electronic beam photetching process, obtain the figure of source-drain electrode.
7. the preparation method of top contact structure organic field effect tube according to claim 1 is characterized in that, the step of etching graph area dielectric protective layer is specially in the described step e: adopt dry etching figure district dielectric protective layer.
8. the preparation method of top contact structure organic field effect tube according to claim 1, it is characterized in that, described step F is specially: adopt the method for metal vaporizing technique or magnetron sputtering, at leakage graphic district, described source deposition growing metal level, form source-drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009103118470A CN102104112A (en) | 2009-12-18 | 2009-12-18 | Method for preparing organic field-effect transistor in top-contact structure |
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| CN2009103118470A CN102104112A (en) | 2009-12-18 | 2009-12-18 | Method for preparing organic field-effect transistor in top-contact structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655215A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Organic field effect transistor structure and preparation method thereof |
| CN114334617A (en) * | 2022-01-11 | 2022-04-12 | 南京邮电大学 | Method for photoetching patterning of organic layer on substrate |
-
2009
- 2009-12-18 CN CN2009103118470A patent/CN102104112A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102655215A (en) * | 2011-03-02 | 2012-09-05 | 中国科学院微电子研究所 | Organic field effect transistor structure and preparation method thereof |
| CN114334617A (en) * | 2022-01-11 | 2022-04-12 | 南京邮电大学 | Method for photoetching patterning of organic layer on substrate |
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Application publication date: 20110622 |