CN102103104A - Method for detecting laser etching effect of amorphous solar cells - Google Patents
Method for detecting laser etching effect of amorphous solar cells Download PDFInfo
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- CN102103104A CN102103104A CN 201010587172 CN201010587172A CN102103104A CN 102103104 A CN102103104 A CN 102103104A CN 201010587172 CN201010587172 CN 201010587172 CN 201010587172 A CN201010587172 A CN 201010587172A CN 102103104 A CN102103104 A CN 102103104A
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Abstract
The invention relates to a method for detecting the laser etching effect of amorphous solar cells, comprising the following steps: (1) horizontally placing a cell panel on a test platform, and turning on a stable light source; (2) setting a universal meter into a direct-current voltage, respectively connecting two meter pens on each subcell, and testing from one side; (3) recording the tested voltage values; (4) testing from the other side, and recording the tested voltage values; and (5) comparing the test results, thus the subcells with smaller data are judged to have the problems of laser etching. A test method of an open-circuit voltage under illumination is adopted in the method provided by the invention. The instrument is simple; the test result is stable, and is easy to analyze; and the etching quality of the laser can be determined explicitly through testing, thus providing powerful evidences for analyzing the performance of the unqualified cells, effectively guiding the improvement direction of a laser process, and improving the quality of the cells.
Description
Technical field
The invention belongs to the solar-photovoltaic technology field, relate to amorphous silicon solar cell, especially a kind of amorphous silicon solar cell laser grooving and scribing effect detection method.
Background technology
Solar cell is a kind of semiconductor photoelectronic device, and its utilizes " photovoltaic effect " principle is electric energy with conversion of solar energy directly, is a kind of regenerative resource of desirable cleaning, is developed rapidly in the world in recent years scope.Amorphous silicon solar cell is a kind of hull cell, thereby in actual production technology, need to form inner series connection constituent components product through laser grooving and scribing and last metal electrode, article three, laser scoring is respectively 1TCO among Fig. 1,2Si and 3AL, wherein the 3rd AL delineation line plays the effect of cutting apart sub-battery, make each sub-battery become an independently integral body, in case delineation goes wrong and will directly have influence on the parallel resistance of entire cell, thereby has influence on the open-circuit voltage and the power of battery.Exactly this delineation line is easily affected by environment aborning and have quality problems, therefore comprehensively understands by detection means, just can better improve, utilize this technology, further improves the performance of battery.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of detection method of amorphous silicon solar cell laser grooving and scribing effect is provided.
The present invention solves its technical matters and takes following technical scheme to realize:
A kind of amorphous silicon solar cell laser grooving and scribing effect detection method, it is as follows to detect step:
(1) cell panel is flat on the test platform, opens stabilized light source;
(2) multimeter is placed shelves of direct voltage, two test pencils are connected on respectively on each sub-battery, test from a side;
(3) the record magnitude of voltage of surveying;
(4) test the record magnitude of voltage of surveying again from opposite side;
(5) compare test result, the obvious less sub-battery of data can be judged as laser grooving and scribing problem.
Advantage of the present invention and good effect are:
1, the present invention adopts the method for testing of open-circuit voltage under the illumination, instrument is simple, test result is stable easily to be analyzed, can clearly determine the delineation quality of laser by test, for the analysis of defective battery performance provides strong evidence, and then effectively instruct the laser technology improvement direction, improve battery quality.
2, the present invention is to carry out respectively in minor face A, B both sides to the test of open-circuit voltage under the illumination, because laser grooving and scribing has inconsistency to the influence of the sub-battery of whole piece, the open-circuit voltage values that shows as the sub-battery of whole piece is different, test from an end for conventional at present, some in-problem sub-battery may be covered, test data is inaccurate, and this method is measured the generation of just having avoided this situation from two ends, makes test more comprehensively, accurately.
3, the present invention in that the sub-battery open circuit voltage under its illumination of test on the platform of stabilized light source is housed, compares stepping according to test result, thereby determines problematic sub-battery with a kind of laser grooving and scribing quality of simple and effective means detection unacceptable product.The back battery open circuit voltage is subjected to ectocine less because illumination acquires a certain degree, so this method of testing is simple, and test result is stable.In addition, because the laser grooving and scribing poor quality often causes the inconsistency of the sub-battery of whole piece, therefore test needs to carry out respectively from the cell panel two ends, like this situation of the sub-battery of reflection whole piece that could be authentic and valid.
Description of drawings
Fig. 1 is a solar cell internal series-connection synoptic diagram of the present invention;
Fig. 2 is the detection platform front view;
Fig. 3 is the side view of Fig. 2.
Embodiment
The invention will be further described below by specific embodiment, and following examples are descriptive, is not determinate, can not limit protection scope of the present invention with this.
A kind of amorphous silicon solar cell laser grooving and scribing effect detection method, the internal series-connection structure of related amorphous silicon solar cell as shown in Figure 1, article three, laser scoring is respectively TCO delineation line 1, Si delineation line 2 and AL delineation line, wherein AL delineation line plays the effect of cutting apart sub-battery, make each sub-battery become an independently integral body, in case delineation goes wrong and will directly have influence on the parallel resistance of entire cell, thereby has influence on the open-circuit voltage and the power of battery.By this detection method, determine the effect of delineation line by means of the microscopic appearance test by measured magnitude of voltage.
Below in conjunction with Fig. 2, Fig. 3 detection method once is described, it is as follows to detect step:
(1) cell panel 7 is flat on the test platform 4, opens stabilized light source 5;
(2) multimeter 6 is placed shelves of direct voltage, two test pencils are connected on respectively on each sub-battery 8, test from the A side;
(3) the record magnitude of voltage of surveying;
(4) test the record magnitude of voltage of surveying again from the B side.
(5) relatively homonymy and heteropleural test result, data obviously less sub-battery can be judged as the AL laser grooving and scribing problem is arranged, and think that the words of further confirming can carry out pattern and test and judge.
This detection method adopts test light to shine the method for sub-battery open circuit voltage down, compares stepping according to test result, thereby determines problematic sub-battery.The back battery open circuit voltage is subjected to ectocine less because illumination acquires a certain degree, so this method of testing is simple, and test result is stable, can be widely used in production and the scientific research.
Claims (1)
1. amorphous silicon solar cell laser grooving and scribing effect detection method is characterized in that: it is as follows to detect step:
(1) cell panel is flat on the test platform, opens stabilized light source;
(2) multimeter is placed shelves of direct voltage, two test pencils are connected on respectively on each sub-battery, test from a side;
(3) the record magnitude of voltage of surveying;
(4) test the record magnitude of voltage of surveying again from opposite side;
(5) compare test result, the obvious less sub-battery of data can be judged as laser grooving and scribing problem.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010587172 CN102103104A (en) | 2010-12-14 | 2010-12-14 | Method for detecting laser etching effect of amorphous solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010587172 CN102103104A (en) | 2010-12-14 | 2010-12-14 | Method for detecting laser etching effect of amorphous solar cells |
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| CN102103104A true CN102103104A (en) | 2011-06-22 |
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| CN 201010587172 Pending CN102103104A (en) | 2010-12-14 | 2010-12-14 | Method for detecting laser etching effect of amorphous solar cells |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1140813C (en) * | 1997-06-30 | 2004-03-03 | 佳能株式会社 | Measuring apparatus and method for measuring characteristic of solar cell |
| KR100924491B1 (en) * | 2009-03-27 | 2009-11-03 | (주) 엠브이텍 | Device for inspecting a Solar Cell and Method of the Same |
| CN101718846A (en) * | 2009-12-08 | 2010-06-02 | 普乐新能源（蚌埠）有限公司 | Method for detecting electrical property of thin film solar panel and detection device thereof |
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2010
- 2010-12-14 CN CN 201010587172 patent/CN102103104A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1140813C (en) * | 1997-06-30 | 2004-03-03 | 佳能株式会社 | Measuring apparatus and method for measuring characteristic of solar cell |
| KR100924491B1 (en) * | 2009-03-27 | 2009-11-03 | (주) 엠브이텍 | Device for inspecting a Solar Cell and Method of the Same |
| CN101718846A (en) * | 2009-12-08 | 2010-06-02 | 普乐新能源（蚌埠）有限公司 | Method for detecting electrical property of thin film solar panel and detection device thereof |
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Application publication date: 20110622 |