CN102097521A - Silicon drift detector with curved surface structure - Google Patents
Silicon drift detector with curved surface structure Download PDFInfo
- Publication number
- CN102097521A CN102097521A CN201010523325XA CN201010523325A CN102097521A CN 102097521 A CN102097521 A CN 102097521A CN 201010523325X A CN201010523325X A CN 201010523325XA CN 201010523325 A CN201010523325 A CN 201010523325A CN 102097521 A CN102097521 A CN 102097521A
- Authority
- CN
- China
- Prior art keywords
- silicon
- type
- curved surface
- detector
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a silicon drift detector with a curved surface structure. The silicon drift detector of the invention comprises an N-type silicon wafer, a P-type drift electrode positioned on an incident face of the N-type silicon wafer, a reverse bias voltage applied to the incident face and an anode positioned on the back face of the N-type silicon wafer, and the silicon drift detector is characterized by further comprising a P-type curved surface drift electrode positioned on the back face of the N-type silicon wafer, and the curved surface is recessed towards the periphery at the position which is away from the anode by a set distance. The invention further discloses a manufacturing method of the silicon drift detector, in which the desired curved surface is obtained by corroding substrate surface with a corrosive agent. The silicon drift detection disclosed by the invention can be applied to X-ray spectral analysis and can also be applied to space exploration and other technical fields.
Description
Technical field
The present invention relates to the semiconductor nuclear radiation detector that uses in the X fluorescence spectrophotometer, the modified model silicon drifting detector that has higher requirements for performance that especially in space exploration, uses.
Background technology
The present invention is primarily aimed at the key core part semiconductor nuclear radiation detector in the analysis of energy dispersion X-ray energy spectrum.
X-ray spectral analysis is after utilizing the x-ray bombardment sample, it contains element and is excited, the fluorescent X-ray that produces has the characteristics of different-energy, energy resolution ability by detector and direct ratio operating characteristic with it separately and detect, thereby calculate the instrument of elemental constituent content in the sample.Detector is the core in the Xray fluorescence spectrometer, and the quality of its performance directly influences the operating efficiency of system.Good detector performance comprises the following aspects:
1) excellent energy resolution and energy linearity;
2) the detection energy range is wide;
3) the dead time weak point has good high counting properties;
4) good can spectral property;
5) easy to use, reliable, firm.
From the sixties in last century, semiconductor detector comes out and is applied to examine X-ray detection X, up to the present developed several generations, performance improves constantly, semiconductor detector commonly used comprises: Au Si surface barrier detector, lithium drifted detector Si (Li), Si-PIN photodiode detector, silicon drifting detector SDD.
The operation principle of silicon drifting detector SDD as shown in Figure 1, with N type high resistance silicon chip is that substrate is made, the plane of incidence (end face) and the back side (bottom surface) at N type silicon chip (substrate) are injected P+ type sheath respectively, form the P-N knot, when applying reverse bias voltage 8, form the complete depletion type semiconductor regions, this is that incident X-rays 1 produces the hole that can be detected and the intrinsic region 2 of duplet.Many sons (electronics) that X ray produces arrive anode 5 through drift potential paddy 10, thereby find out X ray.
When two times of outermost on the bottom surface and innermost voltage ratios exhaust voltage when low slightly, can obtain maximum drift field, and the electromotive force of large tracts of land end face diode is greatly about median.Such condition is supplied with each electrode voltage by the outside and is obtained.This just needs an integrated resistor voltage divider.
The anode of such silicon drifting detector is very little thereby electric capacity is very little, and and detector area irrelevant, its leakage current is also very little simultaneously, so but with the charge sensitive preamplifier low noise, read electronic signal apace.Using liquid nitrogen refrigerating, just can reach very high resolution, equally also is that volume is little in light weight, uses very convenient.
Although the silicon drifting detector replaces lithium drifted detector and Si-PIN photodiode detector, become the ideal detector of High Performance X-ray spectroanalysis instrument.
But there is following defective in above-mentioned silicon drifting detector:
1) as shown in Figure 1, because the realization of drift potential paddy need provide the continuous tilt passive electrode, inevitably can produce extra heating, thereby influence detector use at low temperatures: along with detector operating time lengthening, heating will influence the temperature of detector, thereby make the stability decreases of detector, detection efficient reduces.
2) between the P type drift electrode, for fear of break-through, need add guard ring usually, this has just improved technology difficulty and design complexity, also makes the reliability decrease of device simultaneously
Above-mentioned problem is for high performance X-ray spectrometer, particularly for needing the long-time spectroanalysis instrument that uses to seem particularly important in space exploration.
Summary of the invention
The purpose of this invention is to provide a kind of high-resolution modified model silicon drift semiconductor detector that has, this detector is on the basis of present silicon drifting detector SDD, some structural improvement have been done, both kept existing SDD resolution height, it is big to be suitable for range of count rates, the little lightweight characteristic of volume has overcome the shortcoming of existing SDD again, thereby has improved the performance performance of SDD.
Above-mentioned purpose realizes by following technical proposal:
A kind of silicon drifting detector, it comprises N type silicon chip (being substrate), be positioned at the P type drift electrode of the plane of incidence of described N type silicon chip, put on the reverse bias voltage of the described plane of incidence, anode with being positioned at described N type silicon chip back is characterized in that, described silicon drifting detector also comprises the P type curved surface drift electrode that is positioned at described N type silicon chip back, the distance that described curved surface is set from the described anode of distance caves in to the periphery, shown in Fig. 2 a.
Preferably, described curved surface reduces gradually from the amplitude that described anode caves in to the periphery.
Generally, described N type silicon chip is circular; Anode is positioned at the middle part at the back side, such as just in time being positioned at the center; Described curved surface is around anode, and the inward flange of curved surface and anode are at a distance of certain distance, shown in Fig. 2 b.
Another object of the present invention provides the manufacture method of the silicon drifting detector of described curved-surface structure.This method comprises the steps:
A) on the first surface of N type silicon chip, form silicon dioxide layer and silicon nitride layer successively;
B) obtain the bare silicon surfaces of circular pattern by photoetching;
C) exposed sides of the described silicon dioxide layer of corrosion obtains being positioned at the groove of described silicon nitride layer below;
D) bare silicon surfaces that obtains is corroded, on described first surface, form the curved surface of depression;
E) remove described silicon dioxide layer and silicon nitride layer;
F) the N type silicon chip that obtains is carried out the size cutting, obtain required curved surface size;
G) carry out the ion injection to described curved surface and with the corresponding second surface of described first surface, obtain P type curved surface drift electrode and P type drift electrode respectively; At described first surface sputtering sedimentation metal electrode, obtain anode.
Said method relates to common technology means such as more burn into photoetching, deposition, and they are known to those skilled in the art.Said method concrete parameter in the specific implementation can be as the case may be and the disclosed example of the application difference to some extent.
In a concrete example, step a) forms described silicon dioxide layer by oxidation, and forms described silicon nitride layer by chemical vapour deposition (CVD).
In a concrete example, step c) is corroded described silicon dioxide layer by hydrofluoric acid cushioning liquid, but does not wish the corroding silicon nitride layer this moment, the therefore described hydrofluoric acid cushioning liquid described silicon nitride layer contact of getting along well.
In a concrete example, step d) is 4: 1: 1 40 weight % hydrofluoric acid by volume ratio, and the mixed solution of 69-71 weight % nitric acid and acetic acid corrodes described exposed silicon face.
In a concrete example, step e) is removed described silicon dioxide layer and silicon nitride layer by hydrofluoric acid cushioning liquid, the hydrofluoric acid that herein relates to can with above-mentioned steps c) hydrofluoric acid used is identical or different.
Beneficial effect of the present invention is: the curved-surface structure design of uniqueness of the present invention and the corrective measure of being correlated with, on the basis of silicon drifting detector SDD, produced and had high-resolution modified model silicon drift semiconductor detector, this detector has whole advantages of SDD, and has overcome the shortcoming of SDD.Specific performance is improved part and is comprised:
1) unique curved-surface structure designs, the continuous tilt electrode design that SDD is original becomes the curved surface on similar inclined-plane, thereby has avoided the use of integrated resistor voltage divider, has reduced caloric value, improve the stability of device, make that device can be in continuous operation under the low temperature environment.
2) use of P type curved surface drift electrode can be avoided the punchthrough effect between the traditional continuous tilt passive electrode, thereby improves the stability of device, and the too much application of guard ring in avoiding designing reduces the difficulty of design.
Description of drawings
Fig. 1 is the sectional view of existing silicon drifting detector SDD;
Fig. 2 is the schematic diagram of curved surface silicon drifting detector of the present invention, and wherein Fig. 2 a is a sectional view, and Fig. 2 b is a upward view;
Fig. 3 is the schematic diagram of manufacture method of the silicon drifting detector of embodiment;
Wherein, 1-incident X-rays; The detection intrinsic region of 2-N type silicon chip; The drift path in the hole that the 3-incident X-rays produces; The Electron drift path that the 4-incident X-rays produces; The 5-anode; 6-P type drift electrode; The 7-P+ ion injects the ring dress P type drift electrode that forms; The 8-reverse bias voltage; The 9-preamplifier; 10-drift potential paddy; 11-P type curved surface drift electrode; The 12-silicon dioxide layer; The 13-silicon nitride layer; 14-ring dress opening; Raceway groove behind the 15-silicon dioxide etching; Curved-surface structure behind the 16-silicon slice corrosion.
Embodiment
Further specify the present invention in conjunction with the accompanying drawings below by specific embodiment.
Following embodiment is intended to make by a concrete manufacture method silicon drifting detector of curved-surface structure shown in Figure 2.
Concrete manufacture method comprises the following steps:
1. shown in Fig. 3-1, on as the first surface of the high resistant N type silicon chip of substrate (being the upper surface among Fig. 3-1, also is the back side of the silicon drifting detector finally made), carry out oxidation, form a silicon dioxide layer 12 that thickness is 1 μ m; Thickness of chemical vapour deposition (CVD) (LPCVD) is on this silicon dioxide layer 12 then
Silicon nitride layer 13;
2. shown in Fig. 3-2, carry out photoetching on the surface of silicon nitride layer 13, etch mask, thus obtain encircling the bare silicon surfaces of adorning pattern, form a circular opening 14;
3. shown in Fig. 3-3, on exposed silicon face, add hydrofluoric acid cushioning liquid (BHF) a period of time, exposed side with the corrode silicon dioxide layer, thereby remove the part silicon dioxide layer under the silicon nitride layer, form silicon dioxide groove 15, in this process, silicon nitride layer is not corroded by hydrofluoric acid cushioning liquid;
4. as shown in Figure 3-4, behind the cleaning silicon chip, putting in silicon dioxide groove 15 by percentage by weight is 40% hydrofluoric acid, and percentage by weight is the red fuming nitric acid (RFNA) (MOS level) of 69%-71% and the mixed solution that acetic acid is formed, and three's volume ratio is 4: 1: 1; The exposed surface of this mixed solution corrosion of silicon, forming the cross section after a period of time is half elliptic ring-type erosion grooves, obtains needed curved surface 16; Be appreciated that difference along with corrosive liquid, the difference of etching time, the corrosion number of times what etc., can obtain different curved surface size and shape according to the actual requirements;
5. shown in Fig. 3-5, silicon chip is put into BHF, remove silicon dioxide and silicon nitride layer, promptly obtain having the substrate of required curved surface;
6. shown in Fig. 3-6, the substrate that obtains is carried out the size cutting, obtain required curved surface size;
7. shown in Fig. 3-7, the substrate that obtains is carried out ion to be injected, go up formation P type curved surface drift electrode and P type drift electrode at first surface (lower surface among Fig. 3-7) and second surface (upper surface among Fig. 3-7) respectively, sputtering sedimentation metal electrode on first surface obtains anode simultaneously.
Through after the above-mentioned steps, heat-treat post-processing steps such as (activating the ion that on substrate, injects) and encapsulation again, promptly obtain silicon drifting detector according to curved-surface structure of the present invention.
Claims (7)
1. silicon drifting detector, it comprises N type silicon chip, be positioned at the P type drift electrode of the plane of incidence of described N type silicon chip, put on the reverse bias voltage of the described plane of incidence, with the anode that is positioned at described N type silicon chip back, it is characterized in that described silicon drifting detector also comprises the P type curved surface drift electrode that is positioned at described N type silicon chip back, the distance that described curved surface is set from the described anode of distance caves in to the periphery.
2. silicon drifting detector as claimed in claim 1 is characterized in that described curved surface reduces gradually from the amplitude that described anode caves in to the periphery.
3. the manufacture method of a silicon drifting detector, it comprises the following steps:
A) on the first surface of N type silicon chip, form silicon dioxide layer and silicon nitride layer successively;
B) obtain the bare silicon surfaces of circular pattern by photoetching;
C) exposed sides of the described silicon dioxide layer of corrosion obtains being positioned at the groove of described silicon nitride layer below;
D) bare silicon surfaces that obtains is corroded, on described first surface, form the curved surface of depression;
E) remove described silicon dioxide layer and silicon nitride layer;
F) the N type silicon chip that obtains is carried out the size cutting, obtain required curved surface size;
G) carry out the ion injection to described curved surface and with the corresponding second surface of described first surface, obtain P type curved surface drift electrode and P type drift electrode respectively; At described first surface sputtering sedimentation metal electrode, obtain anode.
4. the manufacture method of silicon drifting detector as claimed in claim 3 is characterized in that, step a) forms described silicon dioxide layer by oxidation, and forms described silicon nitride layer by chemical vapour deposition (CVD).
5. the manufacture method of silicon drifting detector as claimed in claim 3 is characterized in that, step c) is corroded described silicon dioxide layer by hydrofluoric acid cushioning liquid, the described silicon nitride layer contact of getting along well of described hydrofluoric acid cushioning liquid.
6. the manufacture method of silicon drifting detector as claimed in claim 3 is characterized in that, step d) is 4: 1: 1 40 weight % hydrofluoric acid by volume ratio, and the mixed solution of 69-71 weight % nitric acid and acetic acid corrodes described exposed silicon face.
7. the manufacture method of silicon drifting detector as claimed in claim 3 is characterized in that, step e) is removed described silicon dioxide layer and silicon nitride layer by hydrofluoric acid cushioning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010523325XA CN102097521B (en) | 2010-10-22 | 2010-10-22 | Silicon drift detector with curved surface structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010523325XA CN102097521B (en) | 2010-10-22 | 2010-10-22 | Silicon drift detector with curved surface structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102097521A true CN102097521A (en) | 2011-06-15 |
| CN102097521B CN102097521B (en) | 2013-03-06 |
Family
ID=44130488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010523325XA Expired - Fee Related CN102097521B (en) | 2010-10-22 | 2010-10-22 | Silicon drift detector with curved surface structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102097521B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544186A (en) * | 2012-01-17 | 2012-07-04 | 北京大学 | Silicon PIN neutron dose detector and manufacture method thereof |
| CN102569487A (en) * | 2012-01-17 | 2012-07-11 | 北京大学 | Silicon PIN neutron dose detector and manufacturing method thereof |
| CN105940502A (en) * | 2013-12-04 | 2016-09-14 | 射线科学有限公司 | X-ray detector, x-ray imaging device using same, and driving method therefor |
| CN108920758A (en) * | 2018-05-30 | 2018-11-30 | 李正 | The cylindrical two-sided silicon drifting detector (SDD) of large area concentric circles and its design method |
| CN110265511A (en) * | 2019-05-22 | 2019-09-20 | 李正 | The processing technology of large area two-side silicon drifting detector (SDD) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030085358A1 (en) * | 2001-10-03 | 2003-05-08 | Imarad Imaging Systems Ltd. | Two-dimensional radiation detector |
| CN101281148A (en) * | 2007-07-27 | 2008-10-08 | 江苏天瑞信息技术有限公司 | Semiconductor radiation detector with high resolution |
| US20100096674A1 (en) * | 2008-10-17 | 2010-04-22 | Marc Christophersen | Methods and systems of thick semiconductor drift detector fabrication |
-
2010
- 2010-10-22 CN CN201010523325XA patent/CN102097521B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030085358A1 (en) * | 2001-10-03 | 2003-05-08 | Imarad Imaging Systems Ltd. | Two-dimensional radiation detector |
| US20050242292A1 (en) * | 2001-10-03 | 2005-11-03 | Orbotech Medical Solutions Ltd. | Two-dimensional radiation detector |
| CN101281148A (en) * | 2007-07-27 | 2008-10-08 | 江苏天瑞信息技术有限公司 | Semiconductor radiation detector with high resolution |
| US20100096674A1 (en) * | 2008-10-17 | 2010-04-22 | Marc Christophersen | Methods and systems of thick semiconductor drift detector fabrication |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544186A (en) * | 2012-01-17 | 2012-07-04 | 北京大学 | Silicon PIN neutron dose detector and manufacture method thereof |
| CN102569487A (en) * | 2012-01-17 | 2012-07-11 | 北京大学 | Silicon PIN neutron dose detector and manufacturing method thereof |
| CN102544186B (en) * | 2012-01-17 | 2014-04-16 | 北京大学 | Silicon PIN neutron dose detector and manufacture method thereof |
| CN102569487B (en) * | 2012-01-17 | 2014-05-28 | 北京大学 | Silicon PIN neutron dose detector and manufacturing method thereof |
| CN105940502A (en) * | 2013-12-04 | 2016-09-14 | 射线科学有限公司 | X-ray detector, x-ray imaging device using same, and driving method therefor |
| CN105940502B (en) * | 2013-12-04 | 2017-10-20 | 射线科学有限公司 | X-ray detector, x-ray imaging equipment and its driving method using the X-ray detector |
| US10222487B2 (en) | 2013-12-04 | 2019-03-05 | Rayence Co., Ltd. | X-ray detector, X-ray imaging device using same, and driving method therefor |
| CN108920758A (en) * | 2018-05-30 | 2018-11-30 | 李正 | The cylindrical two-sided silicon drifting detector (SDD) of large area concentric circles and its design method |
| CN110265511A (en) * | 2019-05-22 | 2019-09-20 | 李正 | The processing technology of large area two-side silicon drifting detector (SDD) |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102097521B (en) | 2013-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102097521B (en) | Silicon drift detector with curved surface structure | |
| CN108281506B (en) | Silicon drifting detector (SDD) | |
| Zheng et al. | Vacuum-ultraviolet photon detections | |
| CN100463232C (en) | 4H-SiC avalanche photodetector and its preparing method | |
| CN101714591B (en) | Method for manufacturing silicon photoelectric diode | |
| US6838741B2 (en) | Avalanche photodiode for use in harsh environments | |
| AU600573B2 (en) | Solar cell | |
| CN101281148B (en) | Semiconductor radiation detector with high resolution | |
| EP2908351A1 (en) | Photodiode array | |
| US9978802B2 (en) | Multiband optoelectronic device for colorimetric applications and related manufacturing process | |
| CN104221157B (en) | There is the solid-state radiation detector of the gamma radiation sensitivity of enhancing | |
| CN201000897Y (en) | 4H-SiC avalanche photodetector | |
| CN109116209A (en) | A kind of test method of silica-interface state density and capture interface | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| JP2003101059A (en) | Thin-film solar cell | |
| CN102005486B (en) | Beta ray detector based on silicon carbide triode | |
| Evensen et al. | Thin detectors for the CHICSi/spl Delta/EE telescope | |
| CN104685631A (en) | Photodiode array | |
| CN110429156B (en) | Si-APD photoelectric detector based on fractal nanowire surface structure and preparation method | |
| Chong et al. | Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodes | |
| Su et al. | Avalanche mechanism analysis of 4H-SiC nip and pin avalanche photodiodes working in Geiger mode | |
| CN109920877A (en) | The preparation method for dividing furnace extension type silicon substrate to stop impurity band terahertz detector | |
| CN115224150A (en) | Silicon photomultiplier and preparation method thereof | |
| CN109085486A (en) | A kind of test method of the semiconductor-insulator interface density of states and capture cross-section | |
| Redus et al. | Enhanced energy range thermoelectrically cooled silicon X-ray detectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20151022 |
|
| EXPY | Termination of patent right or utility model |