CN102092717B - Polysilicon reduction furnace - Google Patents
Polysilicon reduction furnace Download PDFInfo
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- CN102092717B CN102092717B CN200910056676.1A CN200910056676A CN102092717B CN 102092717 B CN102092717 B CN 102092717B CN 200910056676 A CN200910056676 A CN 200910056676A CN 102092717 B CN102092717 B CN 102092717B
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- heater
- base
- mating part
- polycrystalline silicon
- reducing furnace
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Abstract
The invention relates to a polysilicon reduction furnace, which is used for producing polysilicon. The polysilicon reduction furnace comprises a base and a furnace body arranged on the base; and a heat-insulating device is arranged on the inner wall of the furnace body. By arranging the heat-insulating layer on the inner wall of the furnace body, the heat in the furnace body is utilized more effectively.
Description
Technical field
The present invention relates to a kind of production equipment of polysilicon, especially a kind of polycrystalline silicon reducing furnace for the production of polysilicon.
Background technology
Along with the development of science and technology, the development of solar photovoltaic industry and semi-conductor industry is also more and swifter and more violent.As the polysilicon of solar photovoltaic industry and the main raw material of semi-conductor industry, its industrial requirement is also increasing.
At present, industry produces the method for polysilicon to be had multiple, wherein comparatively commonly hydrogen reduction method.It is that be passed in reaction vessel, under high temperature, hyperbaric environment, both in reaction vessel, chemical reaction occur, formation polysilicon, and are deposited on the heater in reaction vessel using the trichlorosilane of having purified and the hydrogen that purify as raw material.Along with the continuation of chemical reaction, the polysilicon be deposited on heater gets more and more, all being covered by heater gradually, becomes the clava that an appearance is wrapped in polysilicon, is commonly called as silicon rod.Chemical reaction in reaction vessel will proceed, and polysilicon also can continue to be deposited on silicon rod, the diameter of silicon rod is strengthened gradually, to the last reaches predetermined diameter dimension, stop the chemical reaction in reaction vessel.
Industry uses polycrystalline silicon reducing furnace usually, as the reaction vessel implementing above-mentioned chemical reaction.The performance quality of himself, has great impact to the quality of the polysilicon that it is produced.Usually its body of heater including base and be connected with base.
Further, in order to protect body of heater, can not damage by the high temperature in the reaction condition in body of heater, and prevent react generate polysilicon deposition in inboard wall of furnace body surface.Body of heater is generally double-decker, can pass into the cooling water for cooling inboard wall of furnace body or cold oil in its intraformational bed.So, take away the amount of heat near inboard wall of furnace body region by cooling water or cold oil, make the temperature of inboard wall of furnace body relatively lower than polycrystalline reduction depositing temperature.Avoid the high temperature failure inboard wall of furnace body in body of heater.But simultaneously owing to having so temperature difference district in body of heater, this just makes the chemical reaction that can generate silicon tetrachloride as by-product and hydrogen chloride in this region, and then production capacity is declined, need to process the carrying out of silicon tetrachloride as by-product and hydrogen chloride simultaneously, also further increase production cost.
In addition, use cooling water or cold oil to cool inboard wall of furnace body, also make it ceaselessly take away heats a large amount of in stove, its heat taken away can only be lose in vain, and again can not utilize it, and a large amount of cooling waters is evaporated consumption, causes very big water waste.Meanwhile, owing to constantly there being the loss of amount of heat in body of heater, in order to maintain normal production of polysilicon in body of heater, just must constantly providing heat in it, with the heat energy of supplementary loss, this just consumes a large amount of electric energy again.Mode of operation like this clearly, is very huge to the demand of heat energy.That is, it is that the normal production of polysilicon maintained in reduction furnace will consume a large amount of energy, and this obviously violates the requirement of energy-conserving and environment-protective greatly, causes the waste of mass energy.
Therefore, industry is badly in need of a kind of solution of polycrystalline silicon reducing furnace, improves or solves the above problems.
Summary of the invention
In order to overcome the polycrystalline silicon reducing furnace that existing industry uses, cost is high, and energy input is huge, the problem yielded poorly, and the invention provides a kind of polycrystalline silicon reducing furnace, and its cost is low, and energy consumption is little and output is large.
The present invention solves the technical scheme that prior art problem adopts: a kind of polycrystalline silicon reducing furnace, its body of heater including base and it is arranged.Wherein inboard wall of furnace body is provided with heat insulating device, its constituent material includes silicon materials.This heat insulating device can play and cut off in body of heater high temperature to the contact of inboard wall of furnace body, can play again the effect of insulation, so with the more efficient heat energy utilized in body of heater to the heat in body of heater near it.
Further, the setting area of heat insulating device on inboard wall of furnace body, can determine with the need, and it might not need whole inboard wall of furnace body to cover.Such as, it can be only arrange on the inwall of body of heater.
Further, in different embodiments, wherein heat insulating device includes housing, is provided with a host cavity in it.The constituent material of its middle shell includes silicon materials.
Further, in different embodiments, heat preserving and insulating material is contained in the host cavity of wherein heat insulating device.And the heat preserving and insulating material relating to use includes rice-straw ash.
Further, in different embodiments, wherein base being provided with the first mating part, body of heater being also correspondingly provided with the second mating part for connecting with base first mating part, body of heater and base mutually connecting by both mating parts, connect together.
Further, in different embodiments, wherein body of heater is used for having extended outward extension with the bottom of base contacts, and the second mating part is arranged on extension.Further, in different embodiments, the distance that extension extends outward, the namely distance of its outer end distance inboard wall of furnace body, can be fixed with concrete needs, and indefinite.And then second the distance of mating part distance inboard wall of furnace body be also determine with the need, and indefinite.
Further, in different embodiments, wherein the first mating part of base is a ledge structure, and the second mating part of body of heater is a downward bulge-structure.
Further, in different embodiments, wherein a potted component is also provided with between the first mating part of base and the second mating part of body of heater.
Further, in different embodiments, be provided with a groove in the first mating part of wherein base, potted component is partially housed in this groove.
Further, in different embodiments, wherein on base and body of heater, also tightening member is provided with, such as.Trip bolt, to be fixed together both.
The invention has the beneficial effects as follows, by arranging the heat insulating device including silicon materials and form, owing to making it both can play partition heat, avoiding the infringement that stove intimate heat causes inboard wall of furnace body, insulation effect can be played to the heat energy near it again.Avoid water-cooled or oil injection type is taken away heat and causes the loss in vain of heat energy in body of heater, drastically increase the utilization rate of heat energy in body of heater.
In addition, due to the heat insulation effect of heat insulation and preservation device, in the temperature of its near zone and body of heater, temperature is much the same, therefore the chemical reaction of production of polysilicon also can occur in its vicinity, therefore it also can deposit polysilicon, therefore, substantially increase the output of polysilicon.
Accompanying drawing explanation
Fig. 1 is the structural representation of the polycrystalline silicon reducing furnace that the present invention relates to.
Detailed description of the invention
The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Refer to shown in Fig. 1, the present invention relates to a kind of for the production of polysilicon to crystal silicon reduction furnace 100, its body of heater 120 including base 110 and arrange thereon.Be fixed on two U-shaped electrode heaters 150 on base 110, base 110 be also provided with air inlet 113 and some gas outlets 115.The furnace wall of body of heater 120 is double-deck, spiralling cooling pipe or guiding gutter is provided with between double furnace wall, cooling water or cold oil 121 is led in cooling pipe or guiding gutter, the import 123 of cooling water or cold oil 121 is arranged on the bottom of body of heater 120, outlet 125 is arranged on the furnace roof of body of heater 120, by pump (not shown), cooling water or cold oil 121 are pressurizeed, make it continue flowing, thus body of heater 120 is cooled.
Further, be double-deck in the middle part of base 110, in its interlayer, be provided with cooling water or cold oil 111.The outer rim of base 110 is provided with the first mating part 112.Body of heater 120 extends radially outwardly in bottom and is provided with extension 122, is provided with the second mating part 124 for connecting with the first mating part 112 on extension 122.
Further, in different embodiments, the distance that extension 122 extends outward, the namely distance of its outer end distance inboard wall of furnace body, can be fixed with concrete needs, and indefinite.And then second mating part 124 be also determine with the need apart from the distance of inboard wall of furnace body, and indefinite.
Further, in the present embodiment, the first mating part 112 of base 110 is a ledge structure, and the second mating part 124 of body of heater 120 is a downward bulge-structure.By the second mating part 124 of the first mating part 112 of base 110 and body of heater 120 connecting between the two, realize base 110 be connected with body of heater 120 between sealing.Inherently will bear high temperature, the high pressure in body of heater due to base and body of heater, the reaction condition therefore in body of heater will cause anything to affect on it.Therefore, the sealing connected can be ensured between the two in certain limit.
Further, as can be seen from Figure, the contact surface between the mating part 112,124 of base 110 and body of heater 120, and between the contact surface between base 110 and body of heater 120, there is a difference in height.The other types couplings that those skilled in the art converts out according to this feature, all will be considered as the equivalent transformation to the couplings disclosed in the present embodiment.Such as, in other different embodiments, wherein the first mating part of base is a groove structure, and the second mating part of body of heater is a downward bulge-structure.Or the first mating part of base is a bulge-structure, and the second mating part of body of heater is a groove structure upwards caved in.
Further, in the present embodiment, in order to ensure further base 110 to be connected with body of heater 120 between sealing effectiveness.Wherein also be provided with a potted component 130 between the first mating part 112 of base 110 and the second mating part 124 of body of heater 120.Due to the interface sites of both the first mating part 112 and the second mating part 124, be positioned at the outside of cooling water or cold oil 111, therefore it is made can't directly to bear and the HTHP of spending up to more than 1000 in body of heater, and through the cooling of supercooled water or cold oil 111, the temperature of potted component 130 present position is relatively low at about 100 degree, therefore, on selection potted component, just need not select the potted component that the material that can bear HTHP is made, the potted component only material that can bear common 100-200 degree left and right temperature need being selected to make, and the volume of seal can do smaller, and its service life also can be longer, therefore, reduce production cost.
Further, be provided with a groove 114 in the first mating part 112 of base 110, potted component 130 is partially housed in this groove 114.
Further, on base 110 and body of heater 120, also tightening member is provided with, such as.Trip bolt 140, to be fixed together both.
Further, for preventing high temperature in body of heater 120, can cause damage to inboard wall of furnace body, and better utilize the heat in body of heater.Wherein body of heater 120 inwall 126 is provided with heat insulating device 151, in the present embodiment, its constituent material includes silicon materials.This heat insulating device 151 can play and cut off in body of heater high temperature to the contact of inboard wall of furnace body, can play again the effect of insulation to the heat in body of heater near it.
Further, in different embodiments, the setting area of heat insulating device on inboard wall of furnace body, can determine with the need, and it might not need whole inboard wall of furnace body to cover.In the present embodiment, it only on annular inboard wall of furnace body, is provided with heat insulating device.
Further, heat insulating device 151 includes housing 152, is provided with a host cavity 154 in it.In the present embodiment, the constituent material of housing 152 includes silicon materials, and the housing section branch be made up of silicon materials faces directly in body of heater, directly contacts with the high temperature in body of heater.
Further, also further heat preserving and insulating material can be filled, to strengthen the heat insulating effect of heat insulating device in the host cavity 154 arranged in housing 152.
Further, in different embodiments, the heat preserving and insulating material of the wherein interior collecting of the host cavity of heat insulating device includes rice-straw ash.These rice-straw ashes namely, the ash that harvested straw burns till.
Further, body of heater intercrystalline is deposited on the polysilicon outside silicon heat-insulation layer, and available hydraulic thick stick device takes off.Because rice-straw ash has certain elasticity, so hydraulic stem is resisted against outside it, a support, can break into pieces silicon heat-insulation layer and polysilicon deposited thereon thereof, and then it is come off, then collect stand-by.
The foregoing is only better embodiment of the present invention; protection scope of the present invention is not limited with above-mentioned embodiment; in every case those of ordinary skill in the art modify or change according to the equivalence that disclosed content is done, and all should include in the protection domain recorded in claims.
Claims (6)
1. a polycrystalline silicon reducing furnace, its body of heater including base and it is arranged, it is characterized in that: wherein said inboard wall of furnace body is provided with heat insulating device, its constituent material includes silicon materials, it is double-decker in the middle part of described base, be provided with cooling water or cold oil in interlayer, wherein said heat insulating device includes housing, is provided with a host cavity in it; The constituent material of wherein said housing includes silicon materials, contain heat preserving and insulating material, and the heat preserving and insulating material of described collecting includes rice-straw ash in the host cavity of wherein said heat insulating device.
2. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that: wherein said base is provided with the first mating part, described body of heater is also correspondingly provided with the second mating part for connecting with base first mating part, described body of heater and base mutually connecting by both mating parts, connect together.
3. polycrystalline silicon reducing furnace according to claim 2, is characterized in that: wherein said body of heater is used for having extended outward extension with the bottom of base contacts, and described second mating part is arranged on described extension.
4. polycrystalline silicon reducing furnace according to claim 3, is characterized in that: the first mating part of wherein said base is a ledge structure, and the bulge-structure that second match around the boundary line one of described body of heater is downward.
5. polycrystalline silicon reducing furnace according to claim 3, is characterized in that: be also provided with a potted component between the first mating part of wherein said base and the second mating part of body of heater.
6. polycrystalline silicon reducing furnace according to claim 5, is characterized in that: be provided with a groove in the first mating part of wherein said base, potted component is partially housed in this groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910056676.1A CN102092717B (en) | 2009-08-20 | 2009-08-20 | Polysilicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910056676.1A CN102092717B (en) | 2009-08-20 | 2009-08-20 | Polysilicon reduction furnace |
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| CN102092717A CN102092717A (en) | 2011-06-15 |
| CN102092717B true CN102092717B (en) | 2015-04-29 |
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| CN200910056676.1A Active CN102092717B (en) | 2009-08-20 | 2009-08-20 | Polysilicon reduction furnace |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102674361B (en) * | 2012-05-09 | 2014-04-02 | 天津大学 | Top structure of inner container of energy-saving type polysilicon reduction furnace and implementation method for top structure |
| CN106145118B (en) * | 2015-03-10 | 2018-07-20 | 周正平 | A kind of reduction furnace bell jar in production of polysilicon goes cooling water method |
| CN104913638A (en) * | 2015-07-07 | 2015-09-16 | 苏州热工研究院有限公司 | Small-size atmosphere constant temperature furnace for mechanics experimental machine |
| CN104949894A (en) * | 2015-07-07 | 2015-09-30 | 苏州热工研究院有限公司 | High-temperature environment fretting wear testing machine |
| CN108675304A (en) * | 2018-08-31 | 2018-10-19 | 四川永祥新能源有限公司 | A kind of polycrystalline silicon reducing furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0095757A1 (en) * | 1982-05-28 | 1983-12-07 | Siemens Aktiengesellschaft | Process for making polycrystalline silicon ingots suitable for subsequent zone melting |
| CN1884068A (en) * | 2005-06-24 | 2006-12-27 | 刘雅銘 | Reducing furnace for producing polysilicon |
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- 2009-08-20 CN CN200910056676.1A patent/CN102092717B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0095757A1 (en) * | 1982-05-28 | 1983-12-07 | Siemens Aktiengesellschaft | Process for making polycrystalline silicon ingots suitable for subsequent zone melting |
| CN1884068A (en) * | 2005-06-24 | 2006-12-27 | 刘雅銘 | Reducing furnace for producing polysilicon |
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| CN102092717A (en) | 2011-06-15 |
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Effective date of registration: 20221212 Address after: Room 1102, No. 36, Changjiang International Garden, New District, Wuxi City, Jiangsu Province, 214000 Patentee after: Wang Chenqian Address before: Room 102, No. 87 Chunjiang Garden, Xishan District, Wuxi City, Jiangsu Province Patentee before: Wang Chunlong |
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