CN102088159A - End-pumped laser - Google Patents
End-pumped laser Download PDFInfo
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- CN102088159A CN102088159A CN2010106054844A CN201010605484A CN102088159A CN 102088159 A CN102088159 A CN 102088159A CN 2010106054844 A CN2010106054844 A CN 2010106054844A CN 201010605484 A CN201010605484 A CN 201010605484A CN 102088159 A CN102088159 A CN 102088159A
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- limit die
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Abstract
The invention provides an end-pumped laser, which comprises a crystal heat conduction body device for carrying out oscillation on pumped laser and a limit die device with a slit, wherein the laser oscillated by the crystal heat conduction body device passes through the slit of the limit die device; the crystal heat conduction body device comprises a laser crystal and crystal cooling seats positioned at both ends of the laser crystal; and the thicknesses of the crystal cooling seats at both ends are more than the thickness of the laser crystal. The end-pumped laser has the beneficial effects that compared with the prior art, the crystal heat conduction body device is of a flat and wide shape and the heat gradients in the X and Y directions are more coincident, so that the elliptic spot effect when the laser is oscillated can be well delayed; and after being oscillated, the pumped laser passes through the slit, and thus, the slit of the limit die device can be additionally arranged near the crystal so as to make the radius of the spot of the output laser getting round.
Description
[technical field]
The present invention relates to a kind of end-pumped laser that solves output laser ovalizing deflection.
[background technology]
Fig. 1 is the schematic diagram of the structure of existing Nd:YVO4 laser (that is: end-pumped laser), the structure of existing Nd:YVO4 laser is: pump laser diode 11 output wavelengths are 808nm pumping laser 10, enter collimation focusing lens 13 via light-conductive optic fibre 12 focusing, enter the vibration of crystal heat conductor device by collimation focusing lens 13 again, because crystal heat conductor device is by laser crystal 16, and the crystal refrigerating seat 15 that is positioned at these laser crystal 16 two ends is formed, wavelength is that 808nm pumping laser 10 is via this crystal conductor vibration after by output eyeglass 17, at last at polarization direction output laser 18.
As Fig. 2 is the structural representation that crystal heat passes body, because laser crystal 16 is fixing by the crystal refrigerating seat 15 at two ends, and the thickness of laser crystal 16 is less than the thickness of the crystal refrigerating seat 15 that is positioned at two ends, make whole crystal heat pass the body crystal that is square, so the heating face of laser crystal 16 was the directions to the crystal refrigerating seat 15 at two ends when the internal structure of laser crystal 16 had determined laser generation, it is the direction of AB up and down shown in Fig. 2, also Here it is laser polarization direction is so existing crystals cooled all is the cooling upper and lower surface.
Existing Nd:YVO4 crystal is a square structure, and cooling is upper and lower surface, therefore the square heat distribution of crystals X, Y is inhomogeneous, the refractive index gradient that causes X, Y direction is inconsistent, and then make that the thermal focal of crystal directions X and Y direction is inconsistent, form oval hot spot 100, be unfavorable for the practical laser application.
[summary of the invention]
The present invention is by the type of cooling of improving crystal and a kind of end-pumped laser that utilizes slit limit die device solution laser ovalizing deflection problem in the chamber.
The embodiment of the invention is to realize like this, a kind of end-pumped laser, it comprises: the pump laser diode, light-conductive optic fibre, collimation focusing lens of input pumping laser, the crystal heat conductor device that pumping laser is vibrated and the limit die device with slit, via the slit of the laser after the described crystal heat conductor device vibration through described limit die device, wherein, the hot drive of described crystal comprises laser crystal and is positioned at the crystal refrigerating seat at these laser crystal two ends, and the thickness of the crystal refrigerating seat at two ends is greater than the thickness of laser crystal.
The invention has the beneficial effects as follows: crystal heat conductor device of the present invention is to be flattened elastic with respect to prior art, promptly by the length of distilled edition crystal heat conductor device in the Y direction, reduce crystal heat conduction distance, expand the length of this crystal heat conductor device at directions X, increase the crystal area of dissipation, make pumping laser in the laser generation zone of this crystal heat conductor device, the thermal gradient of X and Y direction is more consistent, the ellipse light spot effect in the time of can delaying laser generation well; Pass through slit again after the pumping laser vibration, because the ellipse light spot phenomenon of laser generally all is to produce when the crystal heating amount is big, this moment, thermal lensing effect was serious, also bring near the radius of the hot spot of crystal bigger, near the slit that utilizes this point can add a limit die device crystal makes the spot radius of output laser become round.
[description of drawings]
The invention will be further described in conjunction with example with reference to the accompanying drawings:
Fig. 1 is the structural representation of existing Nd:YVO4 laser;
Fig. 2 is the existing structural representation that passes body for crystal heat;
Fig. 3 is the structural representation of Nd:YVO4 laser of the present invention;
Fig. 4 is the structural representation that crystal heat of the present invention passes body.
[embodiment]
The present invention discloses a kind of method that solves end-pumped laser output laser ovalizing deflection, be respectively the structural representation of Nd:YVO4 laser (that is: end-pumped laser) and crystal thermal conductor as shown in Figure 3 and Figure 4, the structure of Nd:YVO4 laser of the present invention is: pump laser diode 21 output wavelengths are 808nm pumping laser 20, enter collimation focusing lens 23 via light-conductive optic fibre 22 focusing, enter the vibration of crystal heat conductor device by collimation focusing lens 23 again, after the vibration of crystal heat conductor device, pumping laser 20 is through the slit 291 of a limit die device 29, through slit 291 back wavelength is that 808nm pumping laser 20 is via this crystal conductor vibration after by output eyeglass 27, at last at polarization direction output laser 28.
Because crystal heat conductor device is by laser crystal 26, and the crystal refrigerating seat 25 that is positioned at these laser crystal 26 two ends is formed, and the thickness of the crystal refrigerating seat 25 at two ends is greater than the thickness of laser crystal 26, can make that crystal heat conductor device of the present invention is to be flattened elastic with respect to prior art, promptly by the length of distilled edition crystal heat conductor device in the Y direction, reduce crystal heat conduction distance, expand the length of this crystal heat conductor device at directions X, increase the crystal area of dissipation, make the laser generation zone of pumping laser 20 at this crystal heat conductor device, the thermal gradient of X and Y direction is more consistent, the ellipse light spot effect in the time of can delaying laser generation well.
By increase by a limit die device 29 at crystal heat conductor device, this limit die device 29 is provided with slit 291, pass through slit 291 after the pumping laser vibration again, because the ellipse light spot phenomenon of laser generally all is to produce when the crystal heating amount is big, this moment, thermal lensing effect was serious, also bring near the radius of the hot spot of crystal bigger, near the slit that utilizes this point can add a limit die device crystal makes the spot radius of output laser become round 200.
Certainly the present invention also can set up slit by other modes in resonant cavity, as long as the slit that laser is passed through all can become slit of the present invention, thereby can solve the problem of laser ovalizing deflection.
Claims (1)
1. end-pumped laser, it comprises: the pump laser diode, light-conductive optic fibre, collimation focusing lens of input pumping laser, the crystal heat conductor device that pumping laser is vibrated, it is characterized in that: also comprise, limit die device with slit, via the slit of the laser after the described crystal heat conductor device vibration through described limit die device, wherein, the hot drive of described crystal comprises laser crystal and is positioned at the crystal refrigerating seat at these laser crystal two ends, and the thickness of the crystal refrigerating seat at two ends is greater than the thickness of laser crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106054844A CN102088159A (en) | 2010-12-24 | 2010-12-24 | End-pumped laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106054844A CN102088159A (en) | 2010-12-24 | 2010-12-24 | End-pumped laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102088159A true CN102088159A (en) | 2011-06-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106054844A Pending CN102088159A (en) | 2010-12-24 | 2010-12-24 | End-pumped laser |
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| Country | Link |
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| CN (1) | CN102088159A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437288A (en) * | 2003-03-14 | 2003-08-20 | 清华大学 | End semiconductor pumping bidirectional solid ring laser |
| US20040091013A1 (en) * | 2001-03-30 | 2004-05-13 | Satoshi Yamaguchi | Semiconductor laser device and solid laser device using the same |
| CN2674719Y (en) * | 2004-01-16 | 2005-01-26 | 深圳市大族激光科技股份有限公司 | Whole cooled laser of laser diode and resonant cavity separator |
| CN1604406A (en) * | 2004-11-02 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Semiconductor laser side-pumped solid slab laser |
| CN1645691A (en) * | 2005-02-02 | 2005-07-27 | 中国科学院物理研究所 | Active and passive Q-adjusted single longitudinal mode laser |
| CN1848559A (en) * | 2005-04-12 | 2006-10-18 | 深圳市大族激光科技股份有限公司 | Semiconductor double-end pumping solid laser |
| CN101179176A (en) * | 2006-11-09 | 2008-05-14 | 深圳市大族激光科技股份有限公司 | Semiconductor dual-end pumped third harmonic ultraviolet laser |
-
2010
- 2010-12-24 CN CN2010106054844A patent/CN102088159A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040091013A1 (en) * | 2001-03-30 | 2004-05-13 | Satoshi Yamaguchi | Semiconductor laser device and solid laser device using the same |
| CN1437288A (en) * | 2003-03-14 | 2003-08-20 | 清华大学 | End semiconductor pumping bidirectional solid ring laser |
| CN2674719Y (en) * | 2004-01-16 | 2005-01-26 | 深圳市大族激光科技股份有限公司 | Whole cooled laser of laser diode and resonant cavity separator |
| CN1604406A (en) * | 2004-11-02 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Semiconductor laser side-pumped solid slab laser |
| CN1645691A (en) * | 2005-02-02 | 2005-07-27 | 中国科学院物理研究所 | Active and passive Q-adjusted single longitudinal mode laser |
| CN1848559A (en) * | 2005-04-12 | 2006-10-18 | 深圳市大族激光科技股份有限公司 | Semiconductor double-end pumping solid laser |
| CN101179176A (en) * | 2006-11-09 | 2008-05-14 | 深圳市大族激光科技股份有限公司 | Semiconductor dual-end pumped third harmonic ultraviolet laser |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110608 |