CN102082181B - Thin film transistor structure of pixel circuit for organic light emitting device - Google Patents
Thin film transistor structure of pixel circuit for organic light emitting device Download PDFInfo
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- CN102082181B CN102082181B CN201010590047XA CN201010590047A CN102082181B CN 102082181 B CN102082181 B CN 102082181B CN 201010590047X A CN201010590047X A CN 201010590047XA CN 201010590047 A CN201010590047 A CN 201010590047A CN 102082181 B CN102082181 B CN 102082181B
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Abstract
The invention relates to a thin film transistor structure of a pixel circuit for an organic light emitting device. The thin film transistor structure comprises an active layer, a grid insulating layer and a grid electrode layer, wherein the active layer is positioned on the lowest layer; the grid insulating layer is positioned on the active layer; the grid electrode layer is positioned on the grid insulating layer; and both ends of the active layer are respectively connected with a source electrode and a drain electrode. The thin film transistor structure is characterized in that a metal thin film belt for forming the grid electrode layer above the active layer and the active layer form at least two cross points in the middle position of the active layer. The thin film transistor structure has the beneficial effect of better inhibiting the generation of current leakage so that a better display effect can be acquired.
Description
Technical field
The present invention relates to the plane Display Technique, relate in particular to organic luminescent device (OLED) image element circuit.
Background technology
Usually, organic light emitting display is to be combined according to matrix structure by N * M light emitting pixel unit, and each light emitting pixel unit comprises the image element circuit of an Organic Light Emitting Diode and a correspondence.As shown in Figure 1, existing image element circuit mainly is comprised of two transistors and an electric capacity, wherein, the grid of switching transistor T1 be connected with source electrode be connected scanning with scan line SCAN and select signal SCAN) be connected data-signal DATA with data wire DATA) connect, the grid connection is connected in the drain electrode of switching transistor T1 with driving transistors T2; Power supply signal VDD is connected in the drain electrode of driving transistors T2 with power line VDD) connect, thus source electrode is connected with organic electroluminescent LED D1 and is provided for the luminous electric current of D1; Capacitor C1 is connected to and is used for keeping in the given time the voltage that driving transistors T2 is applied between the source electrode of driving transistors T2 and the grid.The running of the image element circuit of said structure is: when switching transistor T1 selects signal SCAN to be switched on according to the scanning that puts on its grid, data-signal DATA is applied on the grid and capacitor C1 of driving transistors T2, the electric current that is complementary with data-signal DATA is stored among the capacitor C1, when driving transistors T2 is switched on, is stored in electric current among the capacitor C1 and is released the organic electroluminescent LED D1 and make it luminous of flowing through.
Fig. 2 and Fig. 3 are manufacture method and the structures corresponding to the panel of the switching transistor T1 of image element circuit shown in Figure 1, form resilient coating at substrate, then utilize conventional method, by on resilient coating, in succession forming active layer 1, gate insulation layer 2 and gate electrode layer 3 and insulating barrier 7, then perforate in the upper strata at active layer 1 two ends, be respectively in the hole and active layer 1 two ends contacted source electrode 4 and drain electrode 5, thereby form the switching transistor T1 of image element circuit, in order to increase the conductive effect of contact position, also be provided with connection metal film 6 at source electrode 4 and drain electrode 5.
Under the perfect condition, when switching transistor T1 was cut off, the electric current that flows to drain electrode (Drain) from the source electrode (Source) of switching transistor T1 should be zero; But, but can there be very small electric current under the virtual condition, this electric current is called as leakage current, and leakage current is less, on the just impact minimum of luminescent properties of pixel current.
Summary of the invention
The objective of the invention is the leakage current for the switching transistor that reduces organic light emitting device pixel circuit, a kind of thin-film transistor structure of organic light emitting device pixel circuit is provided.
Technical scheme of the present invention: a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer, be positioned at gate insulation layer and the gate electrode layer that is positioned on the gate insulation layer on the active layer, the two ends of described active layer are connected with drain electrode with the source electrode respectively, it is characterized in that, described active layer top forms at least twice crosspoint in order to metallic film band and the active layer that forms gate electrode layer in the centre position of active layer.
Above-mentioned active layer is meander-like usefulness so that form at least twice crosspoint in the centre position of fixing size metal membrane band and active layer.
The centre position of above-mentioned active layer has at least one contact hole, and described contact hole is embedded in metal material in order to reduce the impedance of the active layer after prolonging.
The invention has the beneficial effects as follows: because after the size of organic light emitting display and the resolution decision, the size of pixel itself has also just been decided, the size of image element circuit in panel that forms so pixel also just is fixed, under the size that limits, to design the length of the increase active layer that the thin-film transistor of the image element circuit of wanting can not be random, in order in fixed dimension, to increase the length of active layer in order to can arrange the crosspoint of more metallic film band and active layer, therefore so that active layer is meander-like, the crosspoint of only having a metallic film band and active layer with respect to the top of switching transistor T1 in the prior art, after having increased the crosspoint of metallic film band and active layer, so that the switch better effects if of switching transistor T1, the generation of leakage current can be better suppressed, therefore better display effect can be obtained.But, although increased length and be convenient to arrange more metallic film band because active layer is meander-like, but itself has impedance active layer, but increased the impedance of active layer, affect the performance of image element circuit from another angle, just can avoid active layer length to increase the increase of rear impedance by beating contact hole in the centre position of active layer and being embedded in metal material at contact hole.
Description of drawings
The circuit theory diagrams of organic light emitting display image element circuit in Fig. 1 prior art.
Fig. 2 is the planar structure schematic diagram of thin-film transistor in panel among Fig. 1.
Fig. 3 is the cross section structure schematic diagram of thin-film transistor in panel among Fig. 1.
Fig. 4 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 1.
Fig. 5 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 2.
Fig. 6 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 3.
Fig. 7 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 4.
Fig. 8 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 5.
Fig. 9 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 6.
Figure 10 is the planar structure schematic diagram of thin-film transistor in panel of the embodiment of the invention 7.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
Embodiment 1: as shown in Figure 4, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is " one " font, gate electrode layer 3 on the active layer 1 is comprised of two parallel metallic film bands, described metallic film band forms crosspoint, two places in the centre position of active layer 1, two strip metal film strips connect by the top-cross remittance at active layer 1 behind the top of active layer 1.
Embodiment 2: as shown in Figure 5, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is
Shape, the gate electrode layer 3 on the active layer 1 is comprised of two metallic film bands that vertically connect into down " T " font, and described metallic film band passes the active layer centre position and forms crosspoint, two places in the centre position of active layer 1.With respect to embodiment 1, the present embodiment can increase in identical active layer length the crosspoint of metallic film band and active layer 1, further promoted the effect that suppresses leakage current, but, the present embodiment has but caused the increase of active layer length, thereby caused the increase of active layer impedance, from another angle image element circuit has been produced harmful effect.
Embodiment 3: as shown in Figure 6, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is
Shape, gate electrode layer 3 on the active layer 1 is comprised of two metallic film bands that vertically connect into down " T " font, described metallic film band passes the active layer centre position and forms crosspoint, two places in the centre position of active layer 1, simultaneously, a contact hole is made a call in the centre position of active layer such as the place of turning after and as described in contact hole be embedded in metal material in order to the impedance of the active layer after reduce prolonging.In order further to strengthen electric conductivity, can also connection metal film 6 be set on the top of the active layer 1 that is equipped with contact hole.
Embodiment 4: as shown in Figure 7, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is
Font, gate electrode layer 3 on the active layer 1 is comprised of a strip metal film strip, the metallic film band forms crosspoint, two places by the parallel both sides of active layer 1 and in the centre position of active layer 1, has contact hole on vertical one side of described active layer 1 and is embedded in metal material in order to reduce the impedance of the active layer after prolonging at described contact hole.In order further to strengthen electric conductivity, can also connection metal film 6 be set on the top of the active layer 1 that is equipped with contact hole.
Embodiment 5: as shown in Figure 8, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is " one " font, gate electrode layer 3 on the active layer 1 is comprised of two parallel metallic film bands, described metallic film band forms crosspoint, two places in the centre position of active layer 1, the metallic film band is by connecting in top-cross remittance behind the top of active layer 1.The centre position of described active layer has contact hole, and is embedded in metal material in order to reduce the impedance of the active layer after prolonging at described contact hole.In order further to strengthen electric conductivity, can also connection metal film 6 be set on the top of the active layer 1 that is equipped with contact hole.
Embodiment 6: as shown in Figure 9, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is " ㄈ " font, gate electrode layer 3 on the active layer 1 is comprised of the metallic film band of " ten " font, described metallic film band forms three infalls with vertical one side with active layer 1 by the parallel both sides of active layer 1 respectively, have contact hole in two corners of described active layer, and be embedded in metal material in order to reduce the impedance of the active layer after prolonging at described contact hole.In order further to strengthen electric conductivity, can also connection metal film 6 be set on the top of the active layer 1 that is equipped with contact hole.
Embodiment 7: as shown in figure 10, a kind of thin-film transistor structure of organic light emitting device pixel circuit, comprise and be positioned at undermost active layer 1, be positioned at gate insulation layer (not shown) and the gate electrode layer 3 that is positioned on the gate insulation layer on the active layer 1, are connected with the source electrode respectively and are connected connection with drain electrode in the two ends, the left and right sides of active layer 1, active layer 1 is
Font, the gate electrode layer 3 on the active layer 1 is comprised of the metallic film band of two " ten " font, and described metallic film band is respectively by active layer 1
Every one side of font also forms five infalls with active layer 1, all has contact hole in each corner of described active layer 1, and metal material is installed in order to reduce the impedance of the active layer after prolonging in described contact hole.In order further to strengthen electric conductivity, can also connection metal film 6 be set on the top of the active layer 1 that is equipped with contact hole.
Metal material in the contact hole in the source electrode 4 of above-described embodiment 1 to embodiment 7, drain electrode 5 and active layer 1 centre position can adopt the tungsten molybdenum, aluminium, the good metal or alloy material of copper etc. (MoW, AL, Cu, etc) electric conductivity.The material of above-mentioned active layer is semiconductor, after being embedded in the fabulous metal of electric conductivity, contact hole can significantly reduce its impedance, offset because the increase of active layer length, the increase of the impedance that brings is to the harmful effect of image element circuit, because the corresponding operation of contact hole is intrinsic in the transistor manufacturing, so do not need increase equipment or operation.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should to be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not break away from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (1)
1. the thin-film transistor structure of an organic light emitting device pixel circuit, comprise and be positioned at undermost active layer, be positioned at gate insulation layer and the gate electrode layer that is positioned on the gate insulation layer on the active layer, the two ends of described active layer are connected with drain electrode with the source electrode respectively, it is characterized in that, described active layer top forms at least twice crosspoint in order to metallic film band and the active layer that forms gate electrode layer in the centre position of active layer; Described active layer is meander-like usefulness so that form at least twice crosspoint in the centre position of fixing size metal membrane band and active layer; The centre position of described active layer has at least one contact hole, and described contact hole is embedded in metal material in order to reduce the impedance of the active layer after prolonging.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010590047XA CN102082181B (en) | 2010-12-15 | 2010-12-15 | Thin film transistor structure of pixel circuit for organic light emitting device |
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| CN201010590047XA CN102082181B (en) | 2010-12-15 | 2010-12-15 | Thin film transistor structure of pixel circuit for organic light emitting device |
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| CN102082181A CN102082181A (en) | 2011-06-01 |
| CN102082181B true CN102082181B (en) | 2013-01-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2495107A (en) * | 2011-09-28 | 2013-04-03 | Cambridge Display Tech Ltd | Organic light emitting diode display device with further small-area sacrificial diodes |
| CN108062932B (en) | 2017-12-20 | 2020-05-26 | 北京航空航天大学 | Pixel circuit with organic thin film transistor structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1198596A (en) * | 1997-04-08 | 1998-11-11 | 松下电器产业株式会社 | Film transistor and making method thereof and LCD device using it |
| CN1409417A (en) * | 2002-09-23 | 2003-04-09 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
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- 2010-12-15 CN CN201010590047XA patent/CN102082181B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1198596A (en) * | 1997-04-08 | 1998-11-11 | 松下电器产业株式会社 | Film transistor and making method thereof and LCD device using it |
| CN1409417A (en) * | 2002-09-23 | 2003-04-09 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
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| CN102082181A (en) | 2011-06-01 |
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Granted publication date: 20130102 Termination date: 20211215 |