CN102080256B - Quartz crucible - Google Patents
Quartz crucible Download PDFInfo
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- CN102080256B CN102080256B CN 201110050316 CN201110050316A CN102080256B CN 102080256 B CN102080256 B CN 102080256B CN 201110050316 CN201110050316 CN 201110050316 CN 201110050316 A CN201110050316 A CN 201110050316A CN 102080256 B CN102080256 B CN 102080256B
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Abstract
The invention relates to a quartz crucible for holding a silicon solution, wherein the wall of the quartz crucible is divided into an inner layer and an outer layer; the sum of the thickness of the inner layer and the thickness of the outer layer, namely the wall thickness of the quartz crucible, is essentially constant; the inner layer and the outer layer are made of quartz sand; the purity of quartz sand in the inner layer is higher than that of quartz sand in the outer layer; and the thickness of the inner layer in an expected stopping position of the liquid level of the silicon solution is increased, and the thickness of the outer layer in the expected stopping position of the liquid level of the silicon solution is correspondingly reduced. The invention solves the problems of low single crystal yield when the traditional quartz crucible is applied to generate silicon single crystals, and low production efficiency and higher cost due to the short service life of the traditional quartz crucible, and provides a quartz crucible with high silicon single crystal yield, high productivity and low production cost.
Description
Technical field
The present invention relates to a kind of single crystal production equipment.Be specially a kind of quartz crucible that contains melted silicon.
Background technology
In electronic-grade and solar energy level silicon single crystal body vertical pulling method production process, loading the used quartz crucible of melted silicon is crucial consumptive material.In the production process of single crystal, if enter the quartz sand particle of low-purity in the melted silicon, when these quartz sand particles move to the solid-liquid interface of melted silicon, make most probably single crystal become polycrystal.Therefore, loading the used quartz crucible of melted silicon need to be made by glass sand.Present highly purified quartz sand raw material only has the offshore company monopolization of only a few to produce, and is not only expensive, and it is rare to the rich situation that also is hard to buy even.In order to reduce the use of highly purified quartz sand, reduce production costs, quartz crucible commonly used adopts double-layer structure at present, and as shown in Figure 1, wherein internal layer 1 is highly purified quartz sand, and outer 2 is the quartz sand of low-purity.This structure has greatly reduced the consumption of glass sand, thereby has reduced production cost.But the quartz crucible of this structure can not satisfy the requirement of continuous charging; in order to realize that thereby continuous charging improves the efficient of producing; need quartz crucible to bear the high temperature of long period; the quartz crucible of double-layer structure still can produce inwall by melted silicon 3 " erosion " phenomenon after bearing high temperature at present; behind the high temperature that bears certain hour; " erosion " becomes serious; outer field low-purity quartz sand particle can enter melted silicon; may make single crystal become polycrystal; this quartz crucible can not re-use; need to replace with new quartz crucible, this production efficiency that has not only reduced silicon single crystal also makes the production cost of silicon single crystal still higher.Therefore, use present quartz crucible to load silicon melt, not only the monocrystalline yield rate is low and owing to present quartz crucible work-ing life shortly cause that silicon single crystal production efficiency is low, production cost is still higher.
Summary of the invention
The technical problem that the present invention solves be to overcome monocrystalline yield rate when adopting existing quartz crucible to generate silicon single crystal low and since existing quartz crucible with the life-span shortly cause that silicon single crystal production efficiency is low, cost higher shortcoming still, a kind of silicon single crystal monocrystalline yield rate height of generation and high productivity, quartz crucible that production cost is low are provided.
Quartz crucible of the present invention, be used for loading melted silicon, the pot wall of described quartz crucible is divided into internal layer and skin, described internal layer and outer field thickness sum are the wall thickness substantially constant of described pot wall, described internal layer and skin are made by quartz sand, and the purity of described internal layer quartz sand is higher than the purity of described outer quartz sand, and described internal layer estimates that at the melted silicon liquid level thickness of stops increases, and described skin is estimated corresponding the reducing of thickness of stops at described melted silicon liquid level.
As preferably, described internal layer estimates that at the melted silicon liquid level thickness of stops increases to the wall thickness of described pot wall, and described skin estimates that at the melted silicon liquid level thickness of stops is reduced to 0.
As preferably, described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops is greater than the purity of the quartz sand of other position of described internal layer.
As further preferred, described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops is greater than 99.9999%.
As preferably, described internal layer estimates that at the melted silicon liquid level height of stops is 100mm-500mm.
Quartz crucible of the present invention is compared with existing technology, and has following beneficial effect:
1, the internal layer of quartz crucible of the present invention estimates that at the melted silicon liquid level thickness of stops is greater than the thickness of described internal layer, even through the high temperature of long period such as 150 hours, internal layer is estimating that serious " erosion " occured the melted silicon liquid level everywhere, also can not produce the situation generation that outer field quartz sand enters melted silicon, and the internal layer at other position is because difficult generation " erosion " or " erosion " is lighter, can not produce the situation that outer quartz sand enters melted silicon yet, thereby improved the yield rate of silicon single crystal, simultaneously the highest can be extended to 250 hours the work-ing life of quartz crucible, make its requirement of satisfying continuous charging, also reduced the silicon single crystal production cost thereby not only improved production efficiency.
2, the internal layer of quartz crucible of the present invention estimates that at the melted silicon liquid level quartz sand purity of stops is higher than described internal layer quartz sand purity, has further improved the yield rate of silicon single crystal.
Description of drawings
Fig. 1 is the structural representation of existing quartz crucible;
Fig. 2 is the structural representation of the quartz crucible of one embodiment of the invention.
Embodiment
Fig. 2 is the structural representation of the quartz crucible of one embodiment of the invention.As shown in Figure 2, quartz crucible provided by the invention, for loading melted silicon 13, be divided into internal layer 11 and skin 12, the thickness sum of described internal layer 11 and skin 12 is the wall thickness substantially constant of described pot wall, the purity of described internal layer 11 quartz sands is higher than the purity of described outer 12 quartz sands, internal layer 11 is made by highly purified quartz sand, and in the present embodiment, the purity of described internal layer 11 quartz sands is 99.9999%, do not have bubble, its material cost and manufacturing cost will be higher than outer 12 far away; The purity of outer 12 quartz sand is lower than the purity of internal layer 11 quartz sands, and air bubble content is high.Outer 12 quartz sand enters melted silicon 13 and is easy to cause silicon single crystal to become polycrystal, reduces the yield rate of silicon single crystal.In silicon single crystal vertical pulling method production process, in discontinuous charging technology, in stable, seeding and shouldering flow process, the melted silicon liquid level is in stable state of long period, in continuous charging technique, when laser heating, the melted silicon liquid level is in stable state of long period.The applicant notices, the melted silicon liquid level stops of quartz crucible at first and the easiest of described melted silicon 13 " erosion ", for these characteristics, quartz crucible provided by the invention increases described internal layer is estimated stops 14 at the melted silicon liquid level thickness, simultaneously correspondingly reduce described skin is estimated stops at the melted silicon liquid level thickness, keep the wall thickness of quartz crucible constant, the wall thickness of quartz crucible is 10mm in the present embodiment, and described internal layer is made by the quartz sand that purity is equal to or higher than described internal layer 11 quartz sands in melted silicon liquid level expectation stops 14.Wherein " the melted silicon liquid level is estimated stops " is the position that the melted silicon liquid level is in the long period steady state.In the present embodiment, described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops 14 is greater than 99.9999%, identical in the quartz sand purity of other position with described internal layer, described internal layer estimates that at the melted silicon liquid level stops 14 thickness increase most 5mm from existing 2mm, its height H is 250mm, as shown in the figure.Described skin estimates that at the melted silicon liquid level thickness of stops 14 is decreased to 5mm from existing 8mm, and namely described internal layer estimates that at the melted silicon liquid level thickness of stops 14 and described skin are 1: 1 at the ratio of the thickness of melted silicon liquid level expectation stops 14.Because internal layer estimates that at the melted silicon liquid level thickness of stops 14 increases, even through the high temperature of long period such as 150 hours, internal layer estimates that at the melted silicon liquid level serious " erosion " occured at stops 14 places, the quartz sand that also can not produce skin 12 enters the situation generation of melted silicon 13, and internal layer 11 is lighter owing to being difficult for that " erosion " or " erosion " occurs in other position, can not produce the situation that outer 12 quartz sands enter melted silicon 13 yet, thereby improved the yield rate of silicon single crystal, simultaneously the highest from present 80 hours can be extended to 250 hours the work-ing life of quartz crucible, make its requirement of satisfying continuous charging, also reduced the silicon single crystal production cost thereby not only improved production efficiency.
In a second embodiment, described internal layer estimates that at the melted silicon liquid level thickness of stops is 10mm, and described skin estimates that at the melted silicon liquid level thickness of stops is 0mm, namely estimates that at the melted silicon liquid level stops only has high-purity internal layer and is not provided with skin.Described internal layer estimates that at the melted silicon liquid level stops made greater than 99.9999% quartz sand by purity, and its purity is higher than described internal layer in the quartz sand purity of other position, has further improved the yield rate of silicon single crystal and has improved the quality of product.
In above-mentioned two embodiment, described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops 14 can also or be any other numeral between the 99.9999%-100% for 99.99995%, the height of described internal layer on the above-below direction of melted silicon liquid level expectation stops 14 can be 250mm, perhaps any other numeral between the 100mm-500mm.
Above embodiment is exemplary embodiment of the present invention only, is not used in restriction the present invention, and protection scope of the present invention is defined by the claims.Those skilled in the art can make various modifications or be equal to replacement the present invention in essence of the present invention and protection domain, this modification or be equal to replacement and also should be considered as dropping in protection scope of the present invention.
Claims (5)
1. quartz crucible, be used for loading melted silicon, the pot wall of described quartz crucible is divided into internal layer and skin, described internal layer and outer field thickness sum are the wall thickness substantially constant of described pot wall, described internal layer and skin are made by quartz sand, and the purity of described internal layer quartz sand is higher than the purity of described outer quartz sand, it is characterized in that: described internal layer estimates that at the melted silicon liquid level thickness of stops increases, and described skin is estimated corresponding the reducing of thickness of stops at described melted silicon liquid level.
2. quartz crucible according to claim 1 is characterized in that: described internal layer estimates that at the melted silicon liquid level thickness of stops increases to the wall thickness of described pot wall, and described skin estimates that at the melted silicon liquid level thickness of stops is reduced to 0.
3. each described quartz crucible according to claim 1-2 is characterized in that: described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops is greater than the purity of the quartz sand of other position of described internal layer.
4. quartz crucible according to claim 3 is characterized in that: described internal layer estimates that at the melted silicon liquid level quartz sand purity of stops is greater than 99.9999%.
5. it is characterized in that according to claim 1-2 and each the described quartz crucible in the claim 4: described internal layer estimates that at the melted silicon liquid level height of stops is 100mm-500mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110050316 CN102080256B (en) | 2011-03-02 | 2011-03-02 | Quartz crucible |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110050316 CN102080256B (en) | 2011-03-02 | 2011-03-02 | Quartz crucible |
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| CN102080256A CN102080256A (en) | 2011-06-01 |
| CN102080256B true CN102080256B (en) | 2013-03-27 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102363899A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Quartz crucible used for continuous material charging |
| CN103484935A (en) * | 2013-09-16 | 2014-01-01 | 镇江荣德新能源科技有限公司 | Quartz crucible and manufacturing method thereof |
| CN108660506A (en) * | 2017-03-31 | 2018-10-16 | 上海新昇半导体科技有限公司 | A kind of crucible and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6015461A (en) * | 1997-09-12 | 2000-01-18 | Sumitomo Sitix Corporation | Seed crystal holders, for pulling a single crystal |
| CN101624721A (en) * | 2008-07-10 | 2010-01-13 | 日本超精石英株式会社 | Quartz glass crucible and silicon single crystal pulling method using same |
| CN101857969A (en) * | 2009-04-02 | 2010-10-13 | 日本超精石英株式会社 | Vitreous silica crucible for pulling silicon single crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000169285A (en) * | 1998-12-10 | 2000-06-20 | Sumitomo Metal Ind Ltd | Crucible for receiving melted liquid |
| JP2002170780A (en) * | 2000-12-01 | 2002-06-14 | Sharp Corp | Crucible and method for growing polycrystal silicon using it |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6015461A (en) * | 1997-09-12 | 2000-01-18 | Sumitomo Sitix Corporation | Seed crystal holders, for pulling a single crystal |
| CN101624721A (en) * | 2008-07-10 | 2010-01-13 | 日本超精石英株式会社 | Quartz glass crucible and silicon single crystal pulling method using same |
| CN101857969A (en) * | 2009-04-02 | 2010-10-13 | 日本超精石英株式会社 | Vitreous silica crucible for pulling silicon single crystal |
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Effective date of registration: 20170410 Address after: Yangzhong City Economic Development Zone in Jiangsu city of Zhenjiang Province Hong Kong Road 212200 Patentee after: Zhenjiang Rende New Energy Technology Co., Ltd. Address before: Yangzhong City Economic Development Zone Jiangsu city Zhenjiang province 212200 Hong Kong Road No. 998 Patentee before: Zhenjiang Rietech New Energy Technology Co., Ltd. |