CN102074464A - Boron-aluminum process for high-power transistor chip - Google Patents
Boron-aluminum process for high-power transistor chip Download PDFInfo
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- CN102074464A CN102074464A CN 201010580992 CN201010580992A CN102074464A CN 102074464 A CN102074464 A CN 102074464A CN 201010580992 CN201010580992 CN 201010580992 CN 201010580992 A CN201010580992 A CN 201010580992A CN 102074464 A CN102074464 A CN 102074464A
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Abstract
The invention relates to a boron-aluminum diffusion process for a high-power transistor chip. The process comprises the following steps of: 1) preparing source solution, namely dissolving a grams of pure aluminum nitrate, b grams of diboron trioxide into c ml of ethanol; 2) washing a silicon chip; 3) drying the silicon chip; and 4) uniformly coating the source solution prepared in step 1) on the surface of the silicon chip dried in the step 3), placing the silicon chip into a diffusion furnace, rising the temperature to 1,260+/-1 DEG C and keeping the constant temperature for 8 to 10 hours, wherein a:b:c=40:(1.5-2.5):500. In the boron-aluminum diffusion process for the high-power transistor chip, a process method for simultaneously diffusing the boron and the aluminum is adopted; the diffusion depth of the boron can reach 100 to 110 mu m by utilizing high diffusion rate of the aluminum and high surface concentration of the boron at a high temperature, so that the burnback resistance of a product is improved greatly; an amplification factor is more stable; and the product is used in special fields with harsh environment and high reliability requirement.
Description
[technical field]
The present invention relates to the semiconductor element preparing technical field, relate in particular to a kind of processing technology of high-power crystal die.
[background technology]
Transistor is a kind of widely important semiconductor components and devices of application.As transistorized core component, the mode that the processing of transistor chip adopts silicon chip to mix usually forms PN junction, promptly at high temperature boron element is diffused into and forms PN junction in the silicon chip.This diffusion technology has following shortcoming: 1, diffusion rate is slow; 2, the limited common 40um～50um of diffusion depth, limited diffusion depth makes that the PN junction space that forms is little, the performance of product also is affected.
[summary of the invention]
The purpose of this invention is to provide a kind of high-power crystal die boron aluminum extension day labor skill, the diffusion depth of the transistor chip boron of this prepared is darker, makes the PN junction space increase.
To achieve these goals, the present invention adopts following technical scheme:
A kind of high-power crystal die boron aluminum extension day labor skill may further comprise the steps:
1), source solution preparation: pure aluminum nitrate a gram, diboron trioxide b gram are dissolved in cml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 5-10 minute, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 8-10 hours;
A: b: c=40: (1.5-2.5) wherein: 500.
Ethanol described in the step 1) is the pure absolute ethyl alcohol of electronics.
Described No. 1 standard cleaning liquid is NH
4OH/H
2O
2/ H
2O is according to 1: (1-2): the solution that volume ratio (5-7) is mixed.
To achieve these goals, the present invention can also adopt following technical scheme:
A kind of high-power crystal die boron aluminum extension day labor skill may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 1.5 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 5 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 8 hours.
To achieve these goals, the present invention can also adopt following technical scheme:
A kind of high-power crystal die boron aluminum extension day labor skill may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 8 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 9 hours.
To achieve these goals, the present invention can also adopt following technical scheme:
A kind of high-power crystal die boron aluminum extension day labor skill may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2.5 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 10 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 10 hours.
Compared with prior art, a kind of high-power crystal die of the present invention boron aluminum extension day labor skill, the process that has adopted boron aluminium to spread simultaneously, utilize that aluminium has diffusion rate faster under the high temperature, boron has higher surface concentration, can make the diffusion depth of boron reach 100um～110um, the burnback resistance of product is improved greatly, multiplication factor is more stable, and this product is used for work under bad environment, the special dimension that reliability requirement is high.
[description of drawings]
Fig. 1 is high-power crystal die boron aluminum extension day labor process flow figure of the present invention.
[embodiment]
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail.
Embodiment 1
See also shown in Figure 1ly, technology of the present invention may further comprise the steps:
1, source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 1.5 grams are dissolved in ultrasonic 4 hours of 500ml ethanol (electronics is pure) to guarantee abundant dissolving;
2, silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, till ionized water is clear; Then the silicon chip of shakeout is put into quartz beaker, add standard cleaning liquid (NH No. 1
4OH/H
2O
2/ H
2O mixes according to 1: 1: 5 to 1: 2: 7 proportioning), be heated to boiling, 5 minutes retention times, remove then and use the deionized water wash clean;
3, silicon chip oven dry: the silicon chip that step 2 cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens and dries;
4, the source solution that the silicon chip surface coating step 1 after step 3 oven dry is prepared; Inhale the source with dropper, evenly be applied to abradant surface, it is involutory in twos after source solution is slightly done silicon chip to be coated with the source face, to guarantee that concentration is even; The silicon chip that will apply source solution is put into quartz boat then; The quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 8 hours, the concrete time can be according to the product requirement adjustment.The chip that diffusion is good just can enter subsequent processing through check.
Embodiment 2
Present embodiment technology may further comprise the steps:
1, source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2 grams are dissolved in ultrasonic 4 hours of 500ml ethanol (electronics is pure) to guarantee abundant dissolving;
2, silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, till ionized water is clear; Then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, 8 minutes retention times, remove then and use the deionized water wash clean;
3, silicon chip oven dry: the silicon chip that step 2 cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens and dries;
4, the source solution that the silicon chip surface coating step 1 after step 3 oven dry is prepared; Inhale the source with dropper, evenly be applied to abradant surface, it is involutory in twos after source solution is slightly done silicon chip to be coated with the source face, to guarantee that concentration is even; The silicon chip that will apply source solution is put into quartz boat then; The quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 9 hours, the concrete time can be according to the product requirement adjustment.
Embodiment 3
Present embodiment technology may further comprise the steps:
1, source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2.5 grams are dissolved in ultrasonic 4 hours of 500ml ethanol (electronics is pure) to guarantee abundant dissolving;
2, silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, till ionized water is clear; Then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, 10 minutes retention times, remove then and use the deionized water wash clean;
3, silicon chip oven dry: the silicon chip that step 2 cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens and dries;
4, the source solution that the silicon chip surface coating step 1 after step 3 oven dry is prepared; Inhale the source with dropper, evenly be applied to abradant surface, it is involutory in twos after source solution is slightly done silicon chip to be coated with the source face, to guarantee that concentration is even; The silicon chip that will apply source solution is put into quartz boat then; The quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 10 hours, the concrete time can be according to the product requirement adjustment.
The present invention has adopted process that boron aluminium spreads simultaneously to utilize that aluminium has faster diffusion rate under the high temperature, and boron has higher surface concentration. Compare with the method for traditional boron diffusion, do in the same time sample, the chip that the embodiment of the invention 1 is prepared adopts the method for abrasive disc, dyeing to observe diffusion depth under measuring microscope, the diffusion depth that can find out the inventive method boron can reach 100um～110um, thereby the burnback resistance of product is improved greatly, and multiplication factor is more stable. This product is applicable to work under bad environment, the special dimension that reliability requirement is high.
Claims (6)
1. a high-power crystal die boron aluminum extension day labor skill is characterized in that, may further comprise the steps:
1), source solution preparation: pure aluminum nitrate a gram, diboron trioxide b gram are dissolved in cml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 5-10 minute, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 8-10 hours;
A: b: c=40: (1.5-2.5) wherein: 500.
2. a kind of according to claim 1 high-power crystal die boron aluminum extension day labor skill is characterized in that ethanol described in the step 1) is the pure absolute ethyl alcohol of electronics.
3. a kind of according to claim 1 high-power crystal die boron aluminum extension day labor skill is characterized in that described No. 1 standard cleaning liquid is NH
4OH/H
2O
2/ H
2O is according to 1: (1-2): the solution that volume ratio (5-7) is mixed.
4. as a kind of high-power crystal die boron aluminum extension day labor skill as described in each in the claim 1 to 3, it is characterized in that, may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 1.5 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 5 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 8 hours.
5. as a kind of high-power crystal die boron aluminum extension day labor skill as described in each in the claim 1 to 3, it is characterized in that, may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 8 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 9 hours.
6. as a kind of high-power crystal die boron aluminum extension day labor skill as described in each in the claim 1 to 3, it is characterized in that, may further comprise the steps:
1), source solution preparation: pure aluminum nitrate 40 grams, diboron trioxide 2.5 grams are dissolved in 500ml ethanol;
2), silicon chip cleans: silicon chip is put into the deionized water for ultrasonic shakeout, then the silicon chip of shakeout is put into quartz beaker, add No. 1 standard cleaning liquid, be heated to boiling, kept 10 minutes, take out then and use the deionized water wash clean;
3), silicon chip oven dry: with step 2) silicon chip that cleans up dewaters with absolute ethyl alcohol, puts into 120 ± 3 ℃ of baking ovens then and dry;
4), with the even coating step 1 of silicon chip surface after the step 3) oven dry) the source solution for preparing, put into quartz boat then, the quartz boat that is loaded with silicon chip is put into diffusion furnace, be warming up to 1260 ± 1 ℃ of constant temperature 10 hours.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269398A (en) * | 2014-10-08 | 2015-01-07 | 黄山硅鼎电子有限公司 | GPP rectification chip based on reverse grooving technology |
| CN104299901A (en) * | 2014-09-22 | 2015-01-21 | 鞍山市良溪电力科技有限公司 | Method for manufacturing low-power dissipation avalanche thyristor chip through open pipe daubing resource perfect diffusion |
| CN111370303A (en) * | 2018-12-25 | 2020-07-03 | 天津环鑫科技发展有限公司 | Boron-aluminum source for diffusion and configuration method thereof |
| CN111816553A (en) * | 2020-05-29 | 2020-10-23 | 济宁东方芯电子科技有限公司 | Production method of silicon-controlled chip with punch-through structure |
| CN113161230A (en) * | 2020-12-14 | 2021-07-23 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
| CN114606573A (en) * | 2022-01-21 | 2022-06-10 | 济南晶硕电子有限公司 | Environment-friendly boron diffusion source formula |
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| CN1988114A (en) * | 2006-12-20 | 2007-06-27 | 鞍山市华辰电力器件有限公司 | Process for producing rectifier tube chip by one time coating source full spreading |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
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2010
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1988114A (en) * | 2006-12-20 | 2007-06-27 | 鞍山市华辰电力器件有限公司 | Process for producing rectifier tube chip by one time coating source full spreading |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104299901A (en) * | 2014-09-22 | 2015-01-21 | 鞍山市良溪电力科技有限公司 | Method for manufacturing low-power dissipation avalanche thyristor chip through open pipe daubing resource perfect diffusion |
| CN104299901B (en) * | 2014-09-22 | 2017-06-16 | 鞍山市良溪电力科技有限公司 | Open pipe applies the method that source perfect diffusion manufactures low-power consumption snowslide thyristor chip |
| CN104269398A (en) * | 2014-10-08 | 2015-01-07 | 黄山硅鼎电子有限公司 | GPP rectification chip based on reverse grooving technology |
| CN111370303A (en) * | 2018-12-25 | 2020-07-03 | 天津环鑫科技发展有限公司 | Boron-aluminum source for diffusion and configuration method thereof |
| CN111370303B (en) * | 2018-12-25 | 2023-03-28 | 天津环鑫科技发展有限公司 | Boron-aluminum source for diffusion and configuration method thereof |
| CN111816553A (en) * | 2020-05-29 | 2020-10-23 | 济宁东方芯电子科技有限公司 | Production method of silicon-controlled chip with punch-through structure |
| CN113161230A (en) * | 2020-12-14 | 2021-07-23 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
| CN113161230B (en) * | 2020-12-14 | 2022-05-17 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
| CN114606573A (en) * | 2022-01-21 | 2022-06-10 | 济南晶硕电子有限公司 | Environment-friendly boron diffusion source formula |
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