CN102064822A - Generator and method for providing reference signal with adaptive temperature coefficient - Google Patents
Generator and method for providing reference signal with adaptive temperature coefficient Download PDFInfo
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- CN102064822A CN102064822A CN2009102209260A CN200910220926A CN102064822A CN 102064822 A CN102064822 A CN 102064822A CN 2009102209260 A CN2009102209260 A CN 2009102209260A CN 200910220926 A CN200910220926 A CN 200910220926A CN 102064822 A CN102064822 A CN 102064822A
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Abstract
The invention provides a generator and a method for providing a reference signal with an adaptive temperature coefficient. The generator is characterized by comprising a voltage source and a voltage drop circuit, wherein the voltage source provides a first variable voltage which is unrelated to temperature variation; the voltage drop circuit is connected with the voltage source and provides a second voltage with a first temperature coefficient; the second voltage is subtracted from the first voltage to generate the reference signal with a second temperature coefficient; and the second temperature coefficient varies along with the first voltage. The generator and the method have the advantages of providing the reference signal with the adaptive temperature coefficient.
Description
Technical field
The present invention relates to a kind of reference signal generator, specifically, is a kind of reference signal generator and method with adaptability temperature coefficient that provide.
Background technology
Fig. 1 is traditional buck voltage regulator, it comprises that bridge transistor M1 connects bridge transistor M2 down through phase node 12, control chip 10 provides control signal UG and LG to switch upward bridge transistor M1 and bridge transistor M2 down respectively, capacitor C o is charged and generation output voltage V out with control inductive current IL.For fear of the voltage regulator damage, so in the voltage regulator some protective circuits can be set.With the overcurrent protection is example, and traditional method is to judge whether overcurrent by the electric current that descends bridge transistor M2, generally all is that the phase voltage VPH that detects phase node 12 confirms by descending the electric current of bridge transistor M2.In order to judge whether to take place overcurrent, need the reference signal generator to provide reference signal and phase voltage VPH to compare, as phase voltage VPH during greater than described reference signal, i.e. overcurrent takes place in expression.As can be seen from Figure 1, phase voltage
VPH=IL * RDS, formula 1
Wherein RDS is the conducting resistance of following bridge transistor M2.Following bridge transistor M2 itself has temperature coefficient, so conducting resistance RDS can vary with temperature, the difference to some extent so the inductive current IL when in fact overcurrent protection takes place usually is subjected to Temperature Influence.Though also can be at reference signal design temperature coefficient; but circuit overcurrent protection is in control chip 10; and bridge transistor M2 is in the outside of control chip 10 down, so thermal gradient (heat gradient) is unequal, this makes that the temperature coefficient of reference signal is difficult to set.Traditional method is utilized usually and is offset the temperature coefficient that compensates down bridge transistor M2, yet complicated calculations of offset will increase additional workload and unknown system design.
Therefore known device and calculations of offset method at reference signal design temperature coefficient exists above-mentioned all inconvenience and problem.
Summary of the invention
Purpose of the present invention is to propose a kind of reference signal generator that reference signal with adaptability temperature coefficient is provided.
Another object of the present invention is to propose a kind of method that reference signal with adaptability temperature coefficient is provided.
For achieving the above object, technical solution of the present invention is:
A kind of reference signal generator that reference signal with adaptability temperature coefficient is provided is characterized in that comprising:
Voltage source provides an irrelevant variations in temperature and first a variable voltage; And
The pressure drop circuit connects described voltage source, provides second voltage and described first voltage with first temperature coefficient to subtract each other the reference signal that has second temperature coefficient with generation, and described second temperature coefficient changes with described first voltage.
Reference signal generator of the present invention can also be further achieved by the following technical measures.
Aforesaid reference signal generator, wherein said voltage source comprises:
The first variable resistance; And
Second resistance, the tertiary voltage with the irrelevant variations in temperature of dividing potential drop of connecting with described first resistance is to produce described first voltage.
Aforesaid reference signal generator, wherein said pressure drop circuit comprises BJT, described BJT has that base stage connects described voltage source and emitter-base bandgap grading provides described reference signal, has described second voltage between the base stage of described BJT and emitter-base bandgap grading.
Aforesaid reference signal generator, wherein said pressure drop circuit comprises MOS, and described MOS has that gate connects described voltage source and source electrode provides described reference signal, and the critical voltage of described MOS is described second voltage.
Aforesaid reference signal generator, wherein said pressure drop circuit comprises diode, described diode has that anode connects described voltage source and negative electrode provides described reference signal, has described second voltage between the anode of described diode and negative electrode.
A kind of method that reference signal with adaptability temperature coefficient is provided is characterized in that comprising the following steps:
First step: an irrelevant variations in temperature and first a variable voltage is provided;
Second step: second voltage with first temperature coefficient is provided; And
Third step: described first voltage is deducted described second voltage generation have the reference signal of second temperature coefficient, described second temperature coefficient changes with described first voltage.
After adopting technique scheme, the reference signal generator of the reference signal with adaptability temperature coefficient and the method for providing of the present invention has the advantage that the reference signal with adaptability temperature coefficient is provided.
Description of drawings
Fig. 1 is known buck voltage regulator;
Fig. 2 is the embodiments of the invention schematic diagram;
Fig. 3 is the second embodiment schematic diagram of reference signal generator; And
Fig. 4 is the 3rd an embodiment schematic diagram of reference signal generator.
Among the figure, 10, control chip 12, phase node 20, reference signal generator 22, voltage source 24, operational amplifier 26, pressure drop circuit 28, BJT transistor 30, voltage be to electric pressure converter 32, voltage current adapter 34, current mirror 36, comparator 38, MOS transistor 40, diode.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof the present invention is illustrated further.
Now see also Fig. 2, Fig. 2 is the embodiments of the invention schematic diagram.As shown in the figure, described reference signal generator 20 comprises voltage source 22 and pressure drop circuit 26.In voltage source 22, operational amplifier 24 is connected into will the have nothing to do voltage Vref of variations in temperature of voltage follower device and is applied to the end of variable resistor R1, and variable resistor R1 and resistance R 2 branch pressure voltage Vref produce the voltage VIOT of irrelevant variations in temperature.When the change in resistance of variable resistor R1, voltage VIOT also will change.The resistance of variable resistor R1 can the mat fuse or outside fine setting change.Pressure drop circuit 26 comprises bipolarity junction transistor (BJT) 28, it has, and the collection utmost point connects power voltage terminal Vcc, base stage connects voltage source 22 and emitter-base bandgap grading coupling earth terminal GND, provide to the voltage VIOT of the base stage of BJT 28 and after the base stage of BJT 28 and the voltage VBE between the emitter-base bandgap grading subtract each other, on the emitter-base bandgap grading of BJT 28, produce reference signal VTC.Voltage VBE has temperature coefficient TC1, so reference signal VTC also has temperature coefficient TC2.Can be in the hope of temperature coefficient according to reference signal VTC at the value VTC of two different temperatures T1 and T2 (T1) and VTC (T2)
TC2＝[VTC(T2)-VTC(T1)]/VTC(T1)
＝{VIOT-VBE(T2)-[VIOT-VBE(T1)]}/VIOT-VBE(T1)
=[VBE (T2)-VBE (T1)]/VIOT-VBE (T1), formula 2
Wherein VBE (T1) and each representative voltage VBE of VBE (T2) are in the value of temperature T 1 and T2.In formula 2, VBE (T1) and VBE (T2) are definite value, so temperature coefficient TC2 will change with voltage VIOT, in other words, by the resistance that changes variable resistor R1 can regulation voltage VTC temperature coefficient TC2.Voltage amplifies generation signal VOC to electric pressure converter 30 with reference signal VTC.Comparator 36 comparison signal VOC and phase voltage VPH are to produce overcurrent protection signal OCP.Voltage to electric pressure converter 30 in, voltage current adapter 32 is converted to electric current I a with reference signal VTC, current mirror 34 mirror electric current I a produce current Ib=N * Ia and give resistance R b to produce signal VOC.As shown in Figure 2
VOC＝Ib×Rb＝N×Ia×Rb
＝N×(VTC/Ra)×Rb
＝N×VTC×Rb/Ra。Formula 3
Set resistance R a and Rb and have identical temperature coefficient TC3, so signal VOC has identical temperature coefficient TC2 with reference signal VTC.
Fig. 3 is another embodiment of reference signal generator 20, and it is to change the BJT in the pressure drop circuit 26 28 into MOS 38.In this embodiment, MOS 38 has drain and connects power voltage terminal Vcc, gate connection voltage source 22 and source electrode coupling earth terminal GND, provide voltage VIOT to the gate of MOS38 after the critical voltage VT with MOS 38 subtracts each other, on the source electrode of MOS 38, produce reference signal VTC, the critical voltage VT of MOS 38 has temperature coefficient TC1 again, so reference signal VTC also has temperature coefficient TC2.Can be in the hope of temperature coefficient according to reference signal VTC at the value VTC of two different temperatures T1 and T2 (T1) and VTC (T2)
TC2＝[VTC(T2)-VTC(T1)]/VTC(T1)
＝{VIOT-VT(T2)-[VIOT-VT(T1)]}/VIOT-VT(T1)
=[VT (T2)-VT (T1)]/VIOT-VT (T1), formula 4
Wherein VT (T1) and VT (T2) respectively represent the value of critical voltage VT at temperature T 1 and T2.In formula 4, VT (T1) and VT (T2) are definite value, so temperature coefficient TC2 will change with voltage VIOT, in other words, by the resistance that changes variable resistor R1 can regulation voltage VTC temperature coefficient TC2.
Fig. 4 shows the 3rd embodiment of reference signal generator 20, and it is to change the BJT in the pressure drop circuit 26 28 into diode 40.In this embodiment, the anode of diode 40 and negative electrode connect voltage source 22 and ground end GND respectively, between the two ends of diode 40, has forward voltage VD, provide voltage VIOT to the anode of diode 40 after the forward voltage VD with diode 40 subtracts each other, on the negative electrode of diode, produce reference signal VTC, because the forward voltage VD of diode 40 has temperature coefficient TC1, so reference signal VTC also has temperature coefficient TC2.As aforementioned, temperature coefficient TC2 changes with voltage VIOT, by the resistance that changes variable resistor R1 can regulation voltage VTC temperature coefficient TC2.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, person skilled in the relevant technique under the situation that does not break away from the spirit and scope of the present invention, can also be made various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
Claims (6)
1. reference signal generator that tool adaptability temperature coefficient is provided is characterized in that comprising:
Voltage source provides an irrelevant variations in temperature and first a variable voltage; And
The pressure drop circuit connects described voltage source, provides second voltage and described first voltage with first temperature coefficient to subtract each other the reference signal that has second temperature coefficient with generation, and described second temperature coefficient changes with described first voltage.
2. reference signal generator as claimed in claim 1 is characterized in that, described voltage source comprises:
The first variable resistance; And
Second resistance, the tertiary voltage with the irrelevant variations in temperature of dividing potential drop of connecting with described first resistance is to produce described first voltage.
3. reference signal generator as claimed in claim 1, it is characterized in that, described pressure drop circuit comprises BJT, and described BJT has that base stage connects described voltage source and emitter-base bandgap grading provides described reference signal, has described second voltage between the base stage of described BJT and emitter-base bandgap grading.
4. reference signal generator as claimed in claim 1 is characterized in that, described pressure drop circuit comprises MOS, and described MOS has that gate connects described voltage source and source electrode provides described reference signal, and the critical voltage of described MOS is described second voltage.
5. reference signal generator as claimed in claim 1, it is characterized in that, described pressure drop circuit comprises diode, and described diode has that anode connects described voltage source and negative electrode provides described reference signal, has described second voltage between the anode of described diode and negative electrode.
6. the method that tool adaptability temperature coefficient reference signal is provided is characterized in that comprising the following steps:
First step: an irrelevant variations in temperature and first a variable voltage is provided;
Second step: second voltage with first temperature coefficient is provided; And
Third step: described first voltage is deducted described second voltage generation have the reference signal of second temperature coefficient, described second temperature coefficient changes with described first voltage.
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| US6600302B2 (en) * | 2001-10-31 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Voltage stabilization circuit |
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| CN1898620A (en) * | 2003-12-24 | 2007-01-17 | 株式会社瑞萨科技 | Voltage generating circuit and semiconductor integrated circuit device |
| CN1967428A (en) * | 2005-11-16 | 2007-05-23 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN101105414A (en) * | 2006-07-11 | 2008-01-16 | 联发科技股份有限公司 | Temperature sensing apparatus for producing sensing signal and its method |
| US20080192536A1 (en) * | 2007-02-14 | 2008-08-14 | Hynix Semiconductor Inc. | Bit line select voltage generator and nonvolatile memory device using the same |
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2009
- 2009-11-11 CN CN2009102209260A patent/CN102064822A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600302B2 (en) * | 2001-10-31 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Voltage stabilization circuit |
| CN1898620A (en) * | 2003-12-24 | 2007-01-17 | 株式会社瑞萨科技 | Voltage generating circuit and semiconductor integrated circuit device |
| TWI228347B (en) * | 2004-04-23 | 2005-02-21 | Faraday Tech Corp | Bandgap reference circuit |
| CN1967428A (en) * | 2005-11-16 | 2007-05-23 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN101105414A (en) * | 2006-07-11 | 2008-01-16 | 联发科技股份有限公司 | Temperature sensing apparatus for producing sensing signal and its method |
| US20080192536A1 (en) * | 2007-02-14 | 2008-08-14 | Hynix Semiconductor Inc. | Bit line select voltage generator and nonvolatile memory device using the same |
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| 习江艳等: ""温度系数可调的基准电压产生电路研究与设计"", 《液晶与显示》 * |
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Application publication date: 20110518 |