CN102064172A - Light-emitting diode packaging structure - Google Patents
Light-emitting diode packaging structure Download PDFInfo
- Publication number
- CN102064172A CN102064172A CN2010105387027A CN201010538702A CN102064172A CN 102064172 A CN102064172 A CN 102064172A CN 2010105387027 A CN2010105387027 A CN 2010105387027A CN 201010538702 A CN201010538702 A CN 201010538702A CN 102064172 A CN102064172 A CN 102064172A
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- emittingdiode
- light
- packaging structure
- reflector
- substrate
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000004224 protection Effects 0.000 claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 description 14
- 230000006872 improvement Effects 0.000 description 10
- 241000219739 Lens Species 0.000 description 8
- 210000000695 crystalline len Anatomy 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The invention provides a light-emitting diode (LED) packaging structure, which comprises a substrate, an LED chip and a circuit protection module. The substrate comprises a groove; and the circuit protection module is accommodated in the groove and is electrically connected with the LED chip. The LED packaging structure has the advantages of uniform light intensity distribution, high light utilization rate, high product reliability, thinner package and the like.
Description
Technical field
The present invention relates to a kind of electro-optical device, relate in particular to a kind of packaging structure of light-emittingdiode.
Background technology
Along with the raising of perfect, the luminous flux and the light extraction efficiency of semi-conducting material and packaging technology, the power light-emitting diode is applied at the special dimensions such as back light system, automotive lighting and billboard of landscape design, traffic sign, liquid crystal display product.
Seeing also Fig. 1, is a kind of light-emittingdiode packaging structure of prior art planar structure schematic diagram.Described light-emittingdiode packaging structure 1 is the light-emittingdiode packaging structure that utilizes the ceramet substrate package, and it comprises a ceramet substrate 11, a connection electrode 13, a light-emittingdiode chip 15, a reflector 17, an epoxy resin layer 19.
Described ceramet substrate 11 comprises that an accepting hole 111 is one metal-cored 113 to accommodate, and forms the thermal dissipating path of described light-emittingdiode packaging structure 1.
Described light-emittingdiode chip 15 is welded in a wherein side surface of described ceramet substrate 11, and 111 contacts of contiguous described accepting hole are provided with.
Described connection electrode 13 and described light-emittingdiode chip 15 corresponding electrical connections, and run through described ceramet substrate 11 and extend to another opposite flank.
Described reflector 17 is hollow cup-like structure, and its cross section is isosceles trapezoid.The surface of the described ceramet substrate 11 of one end butt of described reflector 17, and make described light-emittingdiode chip 15 be contained in the center of described reflector 17.
Described epoxy resin layer 19 is filled the hollow region of described reflector 17.The inner surface of described reflector 17 is provided with reflecting material, in order to folded light beam to direction initialization.
When 1 work of described light-emittingdiode packaging structure: described connection electrode 13 applies the signal of telecommunication to described light-emittingdiode chip 15, and drives described light-emittingdiode chip 15 electric energy is converted into luminous energy to produce light beam; The light beam that described light-emittingdiode chip 15 produces partly passes described epoxy resin layer 19 direct outgoing, and segment beam is then via outgoing after the inner surface reflection of described reflector 17, and then formation light source luminescent system.
In described light-emittingdiode packaging structure 1, the described light-emittingdiode chip 15 of described ceramet substrate 11 direct butts forms thermal dissipating path, the heat that is produced in described light-emittingdiode packaging structure 1 course of work conducts to the external world via described thermal dissipating path, to guarantee described light-emittingdiode packaging structure 1 operate as normal.
Yet along with improving constantly of light-emittingdiode chip 15 input powers, the big caloric value that big wasted work rate is brought and the light extraction efficiency of high request propose higher requirement for the encapsulation of light-emittingdiode.In above-mentioned light-emittingdiode packaging structure 1, often exist because the too high driving voltage that causes of temperature is influenced, and owing to exist to spark behind the static focus and cause reducing the problem of production reliability.
Summary of the invention
At prior art light-emittingdiode light distribution inequality, the problem that light utilization is not high and production reliability is low, it is even to the invention provides a kind of light distribution, and the packaging structure of the light-emittingdiode that light utilization height and production reliability are high is real to be necessary.
A kind of light-emittingdiode packaging structure; it comprises a substrate, a light-emittingdiode chip and a circuit protection module; described substrate comprises a groove, and described circuit protection module is contained in described groove, and described circuit protection module is electrically connected with described light-emittingdiode chip.
As the further improvement of above-mentioned light-emittingdiode packaging structure, the integral thickness of described circuit protection module is less than or equal to the degree of depth of described groove.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described substrate is that employing has high-insulativity and thermally conductive materials makes.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described substrate comprises a heat conduction through hole, and described light-emittingdiode packaging structure comprises that also one is metal-cored, described metal-cored being contained in the described heat conduction through hole.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described metal-cored and described light-emittingdiode chip is affixed by elargol.
Further improvement as above-mentioned light-emittingdiode packaging structure, described light-emittingdiode packaging structure also comprises a reflector, described reflector is arranged on a wherein surface of described substrate, and cooperates described substrate to surround receiving space to accommodate described light-emittingdiode chip and described groove.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described reflector inner surface is provided with the reflector.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described reflector is to adopt silver or aluminum to make.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described reflector and described substrate are integrative-structures.
As the further improvement of above-mentioned light-emittingdiode packaging structure, described reflector and described substrate are to adopt ceramic material to make.
Compared to prior art; in light-emittingdiode packaging structure of the present invention; increase a circuit protection module is set; and it is contained in the groove of described substrate; by described circuit protection module described light-emittingdiode chip is carried out electrostatic protection, overvoltage protection etc.; to improve the reliability of light-emittingdiode, effectively protect product.
In addition; described groove is set to accommodate described circuit protection module; the height that guarantees described circuit protection module is surperficial consistent with described substrate; so make the light beam that produces in the described light-emittingdiode chip operation process directly be incident upon described reflector; avoid because of the interference of circuit protection module causes light distribution inhomogeneous, it is thinner to reduce the encapsulation of fiber-loss and light-emittingdiode packaging structure simultaneously.
Description of drawings
Fig. 1 is a kind of light-emittingdiode packaging structure of prior art planar structure schematic diagram.
Fig. 2 is the perspective view of a kind of better embodiment of light-emittingdiode packaging structure of the present invention.
Fig. 3 is the cross-sectional view along the II-II line among Fig. 2.
Embodiment
Below in conjunction with accompanying drawing light-emittingdiode packaging structure of the present invention is described.
Please consult Fig. 2 to Fig. 3 simultaneously, wherein Fig. 2 is the perspective view of a kind of better embodiment of light-emittingdiode packaging structure of the present invention, and Fig. 3 is the cross-sectional view along the II-II line among Fig. 2.
Described light-emittingdiode packaging structure 2 is to adopt the light-emittingdiode packaging structure of ceramic substrate as heat sink material.Described light-emittingdiode packaging structure 2 comprises a ceramic substrate 21, a reflector 23, a light-emittingdiode chip 25, a circuit protection module 27 and a lens jacket 29.
Described ceramic substrate 21 is bulk ceramic material, and it has high-insulativity, has the close coefficient of expansion with described light-emittingdiode chip 25 and described circuit protection module 27, than high chemical stability and high coefficient of thermal conductivity.Described ceramic substrate 21 comprises a heat conduction through hole 211, metal-cored 213 and two surface 215,217 and one groove 219 relatively.Described heat conduction through hole 211 run through described ceramic substrate 21 two relatively the surface 215,217.Described metal-cored 213 are contained in the described heat conduction through hole 211, and the inner surface of its outline and described heat conduction through hole 211 connects.Described groove 219 is provided with at interval with described heat conduction through hole 211.Certainly, in the present embodiment, it is ceramic substrate that described ceramic substrate 21 is not restricted to, and it can also be metal substrate, Metal Substrate composite base plate etc.
Described reflector 23 is cup-shaped frameworks that an inner surface is provided with the reflection material, a wherein side surface 215 of the described ceramic substrate 21 of one end butt, and its integral body is the hollow cup-like structure.Described light-emittingdiode chip 25 and described groove 219 are accommodated in described hollow cup-shaped zone.Described hollow cup-shaped zone comprises one first receiving space 231, one second receiving space 233 and one the 3rd receiving space 235 that runs through connection successively.The diameter of described first receiving space 231 is greater than the diameter of described the 3rd receiving space 235.Described second receiving space 233 two ends connect described first receiving space 231 and described the 3rd receiving space 235 respectively.Described receiving space 231,233 and 235 surrounds a global sections and is isosceles trapezoidal structure.Inner surface at described reflector 23 is provided with a reflector 237, and described reflector 237 is to adopt ag material to form by technologies such as deposition, printings.Certainly, in the present embodiment, described reflector 237 is reflector that ag material makes, and it can also be the reflector that aluminium makes certainly, and it is intended to reach reflex, the control beam transmission direction.
Described light-emittingdiode chip 25 comprises light-emittingdiode crystal (figure does not show) and plain conductor 251, and the surface 253 of described light-emittingdiode chip 25 is fixed in described metal-cored 213 surfaces by elargol (not indicating) pressing.In the present embodiment, described elargol can also adopt the compacting of signal bronze material to be fixed together.By the conduction of heat of described jointing material, effectively the heat that is produced in described light-emittingdiode chip 25 courses of work is passed to described metal-coredly 213 rapidly, and then transfer to the external world, avoid heat accumulation.Described lead 251 is the high conduction performance metal material, and it to described light-emittingdiode chip 25, drives its work in order to the transmit outer signal of telecommunication.
Described circuit protection module 27 is housed in the groove 219 of described ceramic substrate 21.Described circuit protection module 27 is electrostatic discharge protective circuits, to avoid when described light-emittingdiode chip 25 is worked, causes the destruction of causing to described light-emittingdiode chip 25 because of static focus.Certainly; in the present embodiment; it is electrostatic discharge protective circuit that described circuit protection module 27 is not restricted to; it can also be that voltage suppresses diode pipe (TVS diode), high pressure resistant protective circuit etc., and every can effectively to protect other protection devices of described light-emittingdiode chip 25 normal operation in the power bracket of setting all be aim of the present invention.The whole height of described circuit protection module 27 equals the degree of depth of described groove 219; when so making in described circuit protection module 27 is contained in described groove 219; a wherein surface of described circuit protection module 27 is the bottom surface of the described groove 219 of butt directly; the opposite side apparent surface is surperficial consistent with described ceramic substrate 21 then; that is, the two is located in the same horizontal plane.Because the top of described circuit protection module 27 does not exceed the surface of described ceramic substrate 21; Gu the encapsulation of described light-emittingdiode packaging structure 2 is thinner; when described light-emittingdiode chip 25 is worked; its light beam that sends is propagated along peripheral direction; the direct described reflector of directive 23 surfaces; described circuit protection module 27 can not produce transmitting beam interferes, Gu the light beam that described light-emittingdiode chip 25 sends is more even.
Described lens jacket 29 is glass lenss, and it has high light transmittance, high temperature tolerance.Described lens jacket 29 joins with described reflector 23.Certainly, in the present embodiment, it is glass lens that described lens jacket 29 is not limited only to, and it can also be silica-gel lens, plexiglass lens etc.
When described light-emittingdiode packaging structure 2 was assembled, described light-emittingdiode chip 25 was fixed in described metal-cored 213 surfaces by the elargol pressing, and described metal-cored 213 are contained in the described heat conduction through hole 211.Described circuit protection module 27 is housed in the groove 219 of described ceramic substrate 21, and a wherein surface of described circuit protection module 27 is the bottom surface of the described groove 219 of butt directly.The top of described circuit protection module 27 does not exceed the surface of described ceramic substrate 21, Gu the encapsulation of described light-emittingdiode packaging structure 2 is thinner.So far, described light-emittingdiode packaging structure 2 complete package.
When described light-emittingdiode 2 packaging structures were worked, the signal of telecommunication transferred to circuit protection module 27 and described light-emittingdiode chip 25 by described lead 251, drives its work, 27 pairs of described light-emittingdiode chip 25 electrostatic protections of described circuit protection module.The heat that is produced in described light-emittingdiode chip 25 courses of work is passed to described metal-cored 213 rapidly, and then is transferred to the external world, avoids heat accumulation.The top of described circuit protection module 27 does not exceed the surface of described ceramic substrate 21, and described light-emittingdiode chip 25 sends light beam and do not produce interference, Gu the light beam that described light-emittingdiode chip 25 sends is more even.
It should be noted that in other execution mode of the present invention, described substrate 21 and described reflector 23 can be same structure, also can be two absolute construction bodies and form by assembling.
Advantages such as in sum, it is even that light-emittingdiode packaging structure of the present invention has light distribution, and light utilization height, production reliability height and encapsulation are thinner.
Only be preferred case study on implementation of the present invention below, be not limited to the present invention, for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. light-emittingdiode packaging structure; it comprises a substrate and a light-emittingdiode chip; it is characterized in that: described light-emittingdiode packaging structure also comprises a circuit protection module; described substrate comprises a groove; described circuit protection module is contained in described groove, and described circuit protection module is electrically connected with described light-emittingdiode chip.
2. according to the described light-emittingdiode packaging structure of claim 1, it is characterized in that the integral thickness of described circuit protection module is less than or equal to the degree of depth of described groove.
3. according to the described light-emittingdiode packaging structure of claim 1, it is characterized in that described substrate is that employing has high-insulativity and thermally conductive materials makes.
4. according to the described light-emittingdiode packaging structure of claim 1, it is characterized in that described substrate comprises a heat conduction through hole, described light-emittingdiode packaging structure comprises that also one is metal-cored, described metal-cored being contained in the described heat conduction through hole.
5. according to the described light-emittingdiode packaging structure of claim 4, it is characterized in that described metal-cored and described light-emittingdiode chip is affixed by elargol.
6. according to the described light-emittingdiode packaging structure of claim 1, it is characterized in that, described light-emittingdiode packaging structure also comprises a reflector, described reflector is arranged on a wherein side surface of described substrate, and cooperates described substrate to surround receiving space to accommodate described light-emittingdiode chip and described groove.
7. according to the described light-emittingdiode packaging structure of claim 6, it is characterized in that described reflector inner surface is provided with the reflector.
8. according to the described light-emittingdiode packaging structure of claim 7, it is characterized in that described reflector is to adopt silver or aluminum to make.
9. according to the described light-emittingdiode packaging structure of claim 6, it is characterized in that described reflector and described substrate are integrative-structures.
10. according to the described light-emittingdiode packaging structure of claim 9, it is characterized in that described reflector and described substrate are to adopt ceramic material to make.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105387027A CN102064172A (en) | 2010-11-10 | 2010-11-10 | Light-emitting diode packaging structure |
| US13/190,200 US8507933B2 (en) | 2010-11-10 | 2011-07-25 | LED lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105387027A CN102064172A (en) | 2010-11-10 | 2010-11-10 | Light-emitting diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102064172A true CN102064172A (en) | 2011-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105387027A Pending CN102064172A (en) | 2010-11-10 | 2010-11-10 | Light-emitting diode packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8507933B2 (en) |
| CN (1) | CN102064172A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664231A (en) * | 2012-05-28 | 2012-09-12 | 歌尔声学股份有限公司 | Light emitting diode device |
| CN104241372A (en) * | 2014-08-04 | 2014-12-24 | 台州市一能科技有限公司 | Wide bandgap semiconductor device and manufacturing method thereof |
| CN104485407A (en) * | 2014-10-23 | 2015-04-01 | 浙江寰龙电子技术有限公司 | LED lamp with control chip |
| CN104638093A (en) * | 2015-02-09 | 2015-05-20 | 深圳市晶台股份有限公司 | Novel LED (Light Emitting Diode) structure encapsulation method |
| EP2820685A4 (en) * | 2012-02-27 | 2015-09-30 | Lg Innotek Co Ltd | Light emitting device package |
| CN107830876A (en) * | 2017-10-16 | 2018-03-23 | 厦门乃尔电子有限公司 | A kind of preparation method of piezoelectric sensing device assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100759015B1 (en) * | 2006-05-30 | 2007-09-17 | 서울반도체 주식회사 | Heat radiating substrate and light-emitting diode having the same |
| CN100352066C (en) * | 2002-07-25 | 2007-11-28 | 松下电工株式会社 | Photoelectric element assembly |
| CN201556617U (en) * | 2009-10-29 | 2010-08-18 | 东贝光电科技股份有限公司 | LED structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7391153B2 (en) * | 2003-07-17 | 2008-06-24 | Toyoda Gosei Co., Ltd. | Light emitting device provided with a submount assembly for improved thermal dissipation |
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2010
- 2010-11-10 CN CN2010105387027A patent/CN102064172A/en active Pending
-
2011
- 2011-07-25 US US13/190,200 patent/US8507933B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352066C (en) * | 2002-07-25 | 2007-11-28 | 松下电工株式会社 | Photoelectric element assembly |
| KR100759015B1 (en) * | 2006-05-30 | 2007-09-17 | 서울반도체 주식회사 | Heat radiating substrate and light-emitting diode having the same |
| CN201556617U (en) * | 2009-10-29 | 2010-08-18 | 东贝光电科技股份有限公司 | LED structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2820685A4 (en) * | 2012-02-27 | 2015-09-30 | Lg Innotek Co Ltd | Light emitting device package |
| US9293672B2 (en) | 2012-02-27 | 2016-03-22 | Lg Innotek Co., Ltd. | Light emitting device package |
| CN102664231A (en) * | 2012-05-28 | 2012-09-12 | 歌尔声学股份有限公司 | Light emitting diode device |
| CN104241372A (en) * | 2014-08-04 | 2014-12-24 | 台州市一能科技有限公司 | Wide bandgap semiconductor device and manufacturing method thereof |
| CN104241372B (en) * | 2014-08-04 | 2020-05-26 | 台州市一能科技有限公司 | Wide bandgap semiconductor device and method of manufacturing the same |
| CN104485407A (en) * | 2014-10-23 | 2015-04-01 | 浙江寰龙电子技术有限公司 | LED lamp with control chip |
| CN104485407B (en) * | 2014-10-23 | 2017-05-24 | 贵州省兴豪华电子科技有限公司 | LED lamp with control chip |
| CN104638093A (en) * | 2015-02-09 | 2015-05-20 | 深圳市晶台股份有限公司 | Novel LED (Light Emitting Diode) structure encapsulation method |
| CN107830876A (en) * | 2017-10-16 | 2018-03-23 | 厦门乃尔电子有限公司 | A kind of preparation method of piezoelectric sensing device assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120112222A1 (en) | 2012-05-10 |
| US8507933B2 (en) | 2013-08-13 |
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Application publication date: 20110518 |