CN102064092A - Carrier separation method for semiconductor technology - Google Patents
Carrier separation method for semiconductor technology Download PDFInfo
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- CN102064092A CN102064092A CN 201010534928 CN201010534928A CN102064092A CN 102064092 A CN102064092 A CN 102064092A CN 201010534928 CN201010534928 CN 201010534928 CN 201010534928 A CN201010534928 A CN 201010534928A CN 102064092 A CN102064092 A CN 102064092A
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Abstract
The invention relates to a carrier separation method for semiconductor technology. The method comprises the following steps of: (a) arranging a first surface of a semiconductor wafer on a first carrier; (b) performing surface treatment on a second surface of the semiconductor wafer, wherein the second surface is opposite to the first surface; (c) arranging a second carrier on the second surface of the semiconductor wafer, (d) removing the first carrier; (e) arranging the first surface of the semiconductor wafer on a frame; and (f) removing the second carrier. In the carrier separation method, the semiconductor wafer is supported and protected by the second carrier and then the first carrier is removed so that the semiconductor wafer is not damaged and broken and then the yield rate of the technology can be improved. In addition, the method for removing the first carrier and the second carrier is simple, so the technical efficiency is improved.
Description
Technical field
The present invention is about a kind of carrier separation method, in detail, and about a kind of carrier separation method that is used for semiconductor technology.
Background technology
With reference to figure 1, it shows the structural representation of the carrier separation method of known semiconductor technology.A semiconductor wafer 10 and a carrier 11 are provided.Utilize a viscose 12, this first surface of this semiconductor crystal wafer 10 is arranged on this carrier 11.This semiconductor crystal wafer 10 has a first surface 101, a second surface 102, an active layers 103, several conductive holes 104 and several conductive components 105.This active layers 103 is arranged at this first surface 101, and these conductive components 105 are arranged at this active layers 103, and these conductive holes 104 are arranged at has an end points 1041 in this semiconductor crystal wafer 10.One protective layer 13 is formed at this second surface 102, and the end points 1041 of these conductive holes 104 protrudes in this protective layer 13.
This second surface 102 of one first chuck 15 and one second chuck, 16 difference these carriers 11 of clipping and this semiconductor crystal wafer 10 is set, and heating is decomposed viscose 12, again first chuck 15 and one second chuck 16 are moved (as the direction of arrow) in the opposite direction, to remove this carrier 11, as shown in Figure 2.
The carrier separation method of above-mentioned known semiconductor technology has following shortcoming.Because this second surface 102 of this semiconductor crystal wafer 10 of second chuck, 16 clippings may cause the damage of this semiconductor crystal wafer 10, and the laterally mobile power of second chuck 16 may cause the fragmentation of this semiconductor crystal wafer 10.
Therefore, be necessary to provide the carrier separation method that is used for semiconductor technology of a kind of innovation and tool progressive, to address the above problem.
Summary of the invention
The invention provides a kind of carrier separation method that is used for semiconductor technology, may further comprise the steps: the first surface that the semiconductor wafer (a) is set is on one first carrier; (b) second surface in this semiconductor crystal wafer carries out surface treatment, and this second surface is with respect to this first surface; (c) one second carrier this second surface in this semiconductor crystal wafer is set; (d) remove this first carrier; (e) this first surface of this semiconductor crystal wafer is set in a framework; Reach and (f) remove this second carrier.
Carrier separation method of the present invention utilizes this second carrier supported to protect this semiconductor crystal wafer, removes this first carrier again, so can not damage this semiconductor crystal wafer, also can not cause the fragmentation of this semiconductor crystal wafer, can improve the yield of technology.In addition, because the support of this second carrier is arranged, can be beneficial to the removing of cull.Moreover the method that removes this first carrier and this second carrier is simplified, and can improve process efficiency.
Description of drawings
Fig. 1 to 2 shows the structural representation of the carrier separation method of known semiconductor technology;
Fig. 3 to 15 shows that first embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology;
Figure 16 to 18 shows that second embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology;
Figure 19 to 21 shows that third embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology;
Figure 22 shows that fourth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology; And
Figure 23 shows that fifth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.
Figure 24 to 36 shows that sixth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.
Embodiment
With reference to figure 3 to 15, it shows that first embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.At first, provide semiconductor wafer 20 and one first carrier 21 with reference to figure 3.This semiconductor crystal wafer 20 has a first surface 201, a second surface 202, an active layers 203, several conductive holes 204 and several conductive components 205.This second surface 202 is with respect to this first surface 201.This active layers 203 is arranged at this first surface 201, and these conductive components 205 are arranged at this active layers 203, and these conductive holes 204 are arranged in this semiconductor crystal wafer 20.
With reference to figure 4, this first surface 201 that this semiconductor crystal wafer 20 is set utilizes this viscose 22 that this semiconductor crystal wafer 20 is attached on this first carrier 21 on this first carrier 21.
This second surface 202 in this semiconductor crystal wafer 20 carries out surface treatment.The surface treatment step of first embodiment of the invention below is described.With reference to figure 5, grind also this second surface 202 of this semiconductor crystal wafer 20 of etching, with the end points 2041 that appears these conductive holes 204.With reference to figure 6, form a protective layer 23 in this second surface 202, with the end points 2041 that covers these conductive holes 204.With reference to figure 7, remove partial protection layer 23, make the end points 2041 of these conductive holes 204 protrude in this protective layer 23.With reference to figure 8, electroplate formation one surface-treated layer (surface finish layer) 24 in the end points 2041 of these conductive holes 204.
With reference to figure 9 and 10, one second carrier 26 this second surface 202 in this semiconductor crystal wafer 20 is set.In the present embodiment, utilize a two-sided adhesive tape 25 second carrier 26 to be arranged at this second surface 202 of this semiconductor crystal wafer 20, wherein this two-sided tape 25 can have the characteristic that tackness reduces under UV-irradiation, for example is the SELFA film of ponding chemistry (SEKISUI CHEMICAL); This two-sided tape 25 also has the characteristic that viscosity reduces under hot environment, it for example is the hot stripping film (31950E) of Nitto Denko Corp (NITTO DENKO), this second carrier 26 is a supporter, this second carrier 26 can be a cap shape, cover this semiconductor crystal wafer 20, this second carrier 26 can be a transparent carrier, for example is: glass.
With reference to Figure 11, remove this first carrier 21.In the present embodiment, removing this first carrier 21 may further comprise the steps.Grind a second surface 212 of this first carrier 21, this second surface 212 is with respect to this first surface 211, to appear these grooves 213 of this first carrier 21.Again this first carrier 21 and viscose 22 are immersed in the solvent, for example be: γ-Ding Suan lactone (GBL, gamma-Butyrolactone) also or monomethyl ether propylene glycol acetic acid esters (PGMEA, Propylene Glycol Monomethyl Ether Acetate), viscose 22 is flowed out, to remove this first carrier 21 by these grooves that appear 213.
With reference to Figure 12, after separating this first carrier 21, because of having this first surface 201 that the part cull can remain in this semiconductor crystal wafer 20, thus can after removing this first carrier 21, remove the cull step again, in order to the cull of this first surface 201 of removing this semiconductor crystal wafer 20.And because the support of this second carrier 26 is arranged, can be inverted this semiconductor crystal wafer 20, be beneficial to the removing of cull.
With reference to Figure 13, this first surface 201 that this semiconductor crystal wafer 20 is set is in a framework (film frame) 27.With reference to Figure 14, remove this second carrier 26.In the present embodiment, remove the method for this second carrier 26, utilize irradiating ultraviolet light also or a thermal process makes the tackness of two-sided tape 25 reduce, so can remove this two-sided tape 25 and this second carrier 26 simultaneously.With reference to Figure 15, utilize this semiconductor crystal wafer 20 of laser cutting to form several semiconductor devices 28.
Carrier separation method of the present invention utilizes this semiconductor crystal wafer 20 of 26 overfill protections of this second carrier, removes this first carrier 21 again, so can not damage this semiconductor crystal wafer 20, also can not cause the fragmentation of this semiconductor crystal wafer 20, can improve the yield of technology.In addition, because the support of this second carrier 26 is arranged, can be beneficial to the removing of cull.Moreover, utilize these grooves that appear 213 of this first carrier 21, viscose 22 can be flowed out by these grooves that appears 213, can simplify the technology of separating first carrier 21, to improve process efficiency.
Referring to figures 16 to 18, it shows that second embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.Second embodiment of the invention is used for the carrier separation method of semiconductor technology, its first surface 201 that this semiconductor crystal wafer 20 is set is on first carrier 31 and carry out the surface-treated step in the second surface 202 of this semiconductor crystal wafer 20 roughly to be used for the carrier separation method of semiconductor technology identical with first embodiment of the invention, please refer to Fig. 9 to 14.The above-mentioned steps difference is that the carrier separation method that second embodiment of the invention is used for semiconductor technology does not form several grooves in this first carrier 31.But similarly be coated with viscose 32 this first surface 311, this semiconductor crystal wafer 20 is attached on this first carrier 31 in this first carrier 31.
With reference to Figure 16 and 17, one second carrier 36 this second surface 202 in this semiconductor crystal wafer 20 is set.In the present embodiment, utilize two-sided tape 35 second carrier 36 to be arranged at this second surface 202 of this semiconductor crystal wafer 20, wherein this second carrier 36 is a supporter, this two-sided tape 35 can have the characteristic that viscosity reduces under hot environment, for example be the hot stripping film (31950E) of Nitto Denko Corp (NITTO DENKO), this second carrier 36 can be the semiconductor wafer.
With reference to Figure 18, remove this first carrier 31.In the present embodiment, removing this first carrier 31 may further comprise the steps.Grind a second surface 312 of this first carrier 31, this second surface 312 makes the thickness attenuation of this first carrier 31 with respect to this first surface 311.This first carrier 31 of etching again is to remove this first carrier 31.
After separating this first carrier 31, can utilize a high-temperature technology to remove this two-sided tape 35 and this second carrier 36, yet, remove cull, be arranged at framework and cutting step identical with the carrier separation method that first embodiment of the invention is used for semiconductor technology, no longer narrate.
Referring to figures 19 through 21, it shows that third embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.Third embodiment of the invention be used for the carrier separation method of semiconductor technology and carrier separation method that second embodiment of the invention is used for semiconductor technology roughly the same.The carrier separation method that third embodiment of the invention is used for semiconductor technology is coated with first viscose 42 this first surface 411 in this first carrier 41, this semiconductor crystal wafer 20 is attached on this first carrier 41, and wherein this first viscose 42 for example is to use the X5000 of Sumitomo Chemical (SUMITOMO CHEMICAL).
In the present embodiment, utilize one second viscose 44 second carrier 43 to be arranged at this second surface 202 of this semiconductor crystal wafer 20, in the present embodiment, this second viscose 44 can be a two-sided adhesive tape and has the characteristic that tackness reduces under UV-irradiation, it for example is the SELFA film of ponding chemistry (SEKISUI CHEMICAL), this second carrier 43 is a transparent carrier, for example is glass.
With reference to Figure 20, remove this first carrier 41.In the present embodiment, removing this first carrier 41 may further comprise the steps.Grind a second surface 412 of this first carrier 41, this second surface 412 makes the thickness attenuation of this first carrier 41 with respect to this first surface 411.This first carrier 41 of etching again is to remove this first carrier 41.
After separating this first carrier 41, the step of removing cull is identical with the carrier separation method that second embodiment of the invention is used for semiconductor technology.With reference to Figure 21, this first surface 201 that this semiconductor crystal wafer 20 is set is in a framework (film frame) 47.Remove this second carrier 43 again.In the present embodiment, utilize this second carrier 43 of UV-irradiation, because this second carrier 43 be transparent carrier, and this second viscose 44 has the characteristic of tackness reduction under UV-irradiation, so removable this second viscose 44 and this second carrier 43.
In other embodiment uses, if this second viscose 44 has the characteristic that viscosity reduces under hot environment,, can heat and make its viscosity, to remove this second viscose 44 and this second carrier 43 with low.
With reference to Figure 22, it shows that fourth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.Fourth embodiment of the invention be used for the carrier separation method of semiconductor technology and carrier separation method that third embodiment of the invention is used for semiconductor technology roughly the same, difference is, removes this first carrier 41.In the present embodiment, removing this first carrier 41 may further comprise the steps.One first chuck (chuck) 45 and one second chuck 46 this first carrier 41 of clipping and this second carrier 43 respectively are set.Wherein, this first viscose 42 is a hot melt adhesive, for example is the X5000 of Sumitomo Chemical (SUMITOMO CHEMICAL), can heat to reduce its viscosity.
In a hot environment, first chuck 45 and one second chuck 46 are moved in the opposite direction removable this first viscose 42 and this first carrier 41.
After separating this first carrier 41, remove cull, be arranged at framework, to remove these second carrier, 43 steps identical with the carrier separation method that third embodiment of the invention is used for semiconductor technology, no longer narrate.
The carrier separation method that is used for semiconductor technology in fourth embodiment of the invention; though still utilize first chuck 45 and second chuck 46 to separate this first carrier 41; but because of this second surface 102 of 43 these semiconductor crystal wafers 10 of overfill protection of this second carrier is arranged, so can not cause the damage and the fragmentation of this semiconductor crystal wafer 20.
With reference to Figure 23, it shows that fifth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.Fifth embodiment of the invention be used for the carrier separation method of semiconductor technology and carrier separation method that second embodiment of the invention is used for semiconductor technology roughly the same, difference is, removes this first carrier 51.In the present embodiment, cut the some of this first carrier 51, this cutting part 511 runs through this first carrier 51.Again with this first carrier 51 and this first viscose 52, for example be: the X5000 of Sumitomo Chemical (SUMITOMO CHEMICAL), immerse in the solvent, for example be: γ-Ding Suan lactone (GBL, gamma-Butyrolactone) also or monomethyl ether propylene glycol acetic acid esters (PGMEA, Propylene Glycol Monomethyl Ether Acetate), first viscose 52 is flowed out, to remove this first carrier 51 by this cutting part 511.Preferably, in the present embodiment, the thickness of first viscose 52 can be thickeied, and to have an error tolerance, can be cut to part first viscose 52 when making cutting, and be unlikely to cutting and destroy this conductive component 205.
After separating this first carrier 51, remove cull, be arranged at framework, remove this second carrier 54 and cutting step identical with the carrier separation method that second embodiment of the invention is used for semiconductor technology, no longer narrate.
With reference to Figure 24 to 36, it shows that sixth embodiment of the invention is used for the structural representation of the carrier separation method of semiconductor technology.At first with reference to Figure 24, sixth embodiment of the invention is used for the carrier separation method of semiconductor technology and carrier separation method difference that first embodiment of the invention is used for semiconductor technology is, this first carrier 21 does not form several grooves 213 of Fig. 3, and viscose 61 is coated this semiconductor crystal wafer 20, this first surface 211 of first carrier 21 has a hydrophobic layer 62 (hydrophobic coating), and the area of this hydrophobic layer 62 is slightly less than the area of this viscose 61.
With reference to Figure 25, this first surface 201 that this semiconductor crystal wafer 20 is set utilizes this viscose 61 that this semiconductor crystal wafer 20 is attached on this first carrier 21 on this first carrier 21.
This second surface 202 in this semiconductor crystal wafer 20 carries out surface treatment.The surface treatment step of sixth embodiment of the invention below is described.With reference to Figure 26, grind also this second surface 202 of this semiconductor crystal wafer 20 of etching, with the end points 2041 that appears these conductive holes 204.With reference to Figure 27, form a protective layer 23 in this second surface 202, with the end points 2041 that covers these conductive holes 204.With reference to Figure 28, remove partial protection layer 23, make the end points 2041 of these conductive holes 204 protrude in this protective layer 23.With reference to Figure 29, electroplate formation one surface-treated layer (surface finish layer) 24 in the end points 2041 of these conductive holes 204.
With reference to Figure 30, be coated with one first primer (underfill) 63 on this protective layer 23.With reference to Figure 31, at least one chip (die) 64 is set on this semiconductor crystal wafer 20, and electrically connects with this surface-treated layer 24.
Please also refer to Figure 32 and 33, one framework (film frame) 65 is set in a side of this chip 64, remove this first carrier 21 of this hydrophobic layer 62 of tool, in the present embodiment, this first carrier 21 is immersed in a solvent, for example be: the γ-Ding Suan lactone (GBL, gamma-Butyrolactone) also or monomethyl ether propylene glycol acetic acid esters (PGMEA, Propylene Glycol Monomethyl Ether Acetate), to remove this viscose 61 and this first carrier 21.
With reference to Figure 34, utilize this semiconductor crystal wafer 20 of laser cutting to form several semiconductor devices 29.At least one chip 64 is set on each semiconductor device 29, in the present embodiment, a chip 64 is set on this semiconductor device 29; In other embodiments, on this semiconductor device 29 several chips 64 can be set.
With reference to Figure 35, remove this framework 65, and be inverted this semiconductor device 29, this semiconductor device 29 is set on a substrate 66, the conductive component 205 of this semiconductor device 29 electrically connects with this substrate 66.In the present embodiment, a first surface 661 coatings one second primer (underfill) 67 of this substrate 66 makes this semiconductor device 29 be connected to the first surface 661 of this substrate 66.With reference to Figure 36, the second surface 662 of several soldered balls (solder ball) 68 in this substrate 66 is set, electrically connect with assembly with the external world.
Carrier separation method of the present invention utilizes this second carrier supported to protect this semiconductor crystal wafer, removes this first carrier again, so can not damage this semiconductor crystal wafer, also can not cause the fragmentation of this semiconductor crystal wafer, can improve the yield of technology.In addition, because the support of this second carrier is arranged, can be beneficial to the removing of cull.Moreover the method that removes this first carrier and this second carrier is simplified, and can improve process efficiency.
The foregoing description only is explanation principle of the present invention and effect thereof, and unrestricted the present invention.Therefore practising makes amendment to the foregoing description and change in the personage of this technology does not still take off spirit of the present invention.Interest field of the present invention should be listed as claims.
Claims (12)
1. carrier separation method that is used for semiconductor technology may further comprise the steps:
(a) first surface of semiconductor wafer is set on one first carrier;
(b) second surface in this semiconductor crystal wafer carries out surface treatment, and this second surface is with respect to this first surface;
(c) one second carrier this second surface in this semiconductor crystal wafer is set;
(d) remove this first carrier;
(e) this first surface of this semiconductor crystal wafer is set in a framework; And
(f) remove this second carrier.
2. carrier separation method as claimed in claim 1, wherein in step (a), form several grooves in a first surface of this first carrier, these grooves do not run through this first carrier, and the coating viscose is attached on this first carrier this semiconductor crystal wafer in this first surface of this first carrier.
3. carrier separation method as claimed in claim 2 wherein in step (c), utilizes one to grind adhesive tape second carrier is arranged at this second surface of this semiconductor crystal wafer, and wherein this second carrier is a supporter.
4. carrier separation method as claimed in claim 3, wherein in step (d), other may further comprise the steps:
(d1) grind a second surface of this first carrier, this second surface is with respect to this first surface, to appear these grooves of this first carrier; And
(d2) this first carrier and viscose are immersed in the solution, viscose is flowed out, by these grooves that appear to remove this first carrier.
5. carrier separation method as claimed in claim 4, wherein in step (d) afterwards, other comprises that one removes the cull step, in order to the cull of this first surface of removing this semiconductor crystal wafer.
6. carrier separation method as claimed in claim 1, wherein in step (d), other may further comprise the steps:
(d1) grind a second surface of this first carrier, this second surface makes the thickness attenuation of this first carrier with respect to this first surface;
(d2) this first carrier of etching is to remove this first carrier.
7. carrier separation method as claimed in claim 1, wherein, in step (c), utilize one second viscose second carrier to be arranged at this second surface of this semiconductor crystal wafer, in step (f), utilize this second carrier of UV-irradiation, to remove this second viscose and this second carrier.
8. carrier separation method as claimed in claim 1 wherein in step (c), utilizes one second viscose that second carrier is arranged at this second surface of this semiconductor crystal wafer, and in step (f), heating is to remove this second viscose and this second carrier.
9. carrier separation method as claimed in claim 1 wherein in step (a), is coated with first viscose this first surface in this first carrier, and this semiconductor crystal wafer is attached on this first carrier, and in step (d), other may further comprise the steps:
(d1) one first chuck and one second chuck this first carrier of clipping and this second carrier respectively are set;
(d2) heat this first viscose; And
(d3) first chuck and one second chuck are moved in the opposite direction, to remove this first carrier and this first viscose.
10. carrier separation method as claimed in claim 9, wherein in step (c), utilize one second viscose that second carrier is arranged at this second surface of this semiconductor crystal wafer, in step (f), utilize this second carrier of UV-irradiation, to remove this second viscose and this second carrier.
11. carrier separation method as claimed in claim 1 wherein in step (a), is coated with first viscose this first surface in this first carrier, and this semiconductor crystal wafer is attached on this first carrier, in step (d), other may further comprise the steps:
(d1) cut the some of this first carrier, this cutting part runs through this first carrier; And
(d2) this first carrier and this first viscose are immersed in the solution, viscose is flowed out, by this cutting part to remove this first carrier.
12., wherein in step (d1), be cut to part first viscose as the carrier separation method of claim 11.
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| CN201010534928A CN102064092B (en) | 2010-10-26 | 2010-10-26 | Carrier separation method for semiconductor technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102244014A (en) * | 2011-06-08 | 2011-11-16 | 日月光半导体制造股份有限公司 | Manufacturing method of stackable package structure |
| CN103199070A (en) * | 2012-04-25 | 2013-07-10 | 日月光半导体制造股份有限公司 | Semiconductor element with passivation segment and manufacturing method thereof |
| CN105097431A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Wafer front protecting method |
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| CN101312161A (en) * | 2007-05-21 | 2008-11-26 | 国际商业机器公司 | Electronic structure and manufacturing method |
| JP2009260212A (en) * | 2008-03-26 | 2009-11-05 | Hitachi Chem Co Ltd | Dicing method for semiconductor wafer, and method of manufacturing semiconductor device using the same |
| US20100227454A1 (en) * | 2009-03-05 | 2010-09-09 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
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| CN101312161A (en) * | 2007-05-21 | 2008-11-26 | 国际商业机器公司 | Electronic structure and manufacturing method |
| JP2009260212A (en) * | 2008-03-26 | 2009-11-05 | Hitachi Chem Co Ltd | Dicing method for semiconductor wafer, and method of manufacturing semiconductor device using the same |
| US20100227454A1 (en) * | 2009-03-05 | 2010-09-09 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102244014A (en) * | 2011-06-08 | 2011-11-16 | 日月光半导体制造股份有限公司 | Manufacturing method of stackable package structure |
| CN102244014B (en) * | 2011-06-08 | 2013-11-20 | 日月光半导体制造股份有限公司 | Manufacturing method of stackable package structure |
| CN103199070A (en) * | 2012-04-25 | 2013-07-10 | 日月光半导体制造股份有限公司 | Semiconductor element with passivation segment and manufacturing method thereof |
| CN105097431A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Wafer front protecting method |
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