CN102054882B - Conductive silver paste with grid electrode front of crystalline silicon solar cell and preparation method - Google Patents
Conductive silver paste with grid electrode front of crystalline silicon solar cell and preparation method Download PDFInfo
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- CN102054882B CN102054882B CN2009101979189A CN200910197918A CN102054882B CN 102054882 B CN102054882 B CN 102054882B CN 2009101979189 A CN2009101979189 A CN 2009101979189A CN 200910197918 A CN200910197918 A CN 200910197918A CN 102054882 B CN102054882 B CN 102054882B
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- silicon solar
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- 239000011521 glass Substances 0.000 claims abstract description 29
- 229910052709 silver Inorganic materials 0.000 claims abstract description 27
- 239000004332 silver Substances 0.000 claims abstract description 27
- 239000002904 solvent Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims description 32
- 229920005989 resin Polymers 0.000 claims description 32
- 239000002002 slurry Substances 0.000 claims description 27
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 17
- 239000000428 dust Substances 0.000 claims description 17
- 150000002902 organometallic compounds Chemical class 0.000 claims description 17
- 229920002521 macromolecule Polymers 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 12
- 238000005303 weighing Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000001856 Ethyl cellulose Substances 0.000 claims description 11
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 11
- 150000002148 esters Chemical class 0.000 claims description 11
- 229920001249 ethyl cellulose Polymers 0.000 claims description 11
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229940120693 copper naphthenate Drugs 0.000 claims description 7
- SEVNKWFHTNVOLD-UHFFFAOYSA-L copper;3-(4-ethylcyclohexyl)propanoate;3-(3-ethylcyclopentyl)propanoate Chemical compound [Cu+2].CCC1CCC(CCC([O-])=O)C1.CCC1CCC(CCC([O-])=O)CC1 SEVNKWFHTNVOLD-UHFFFAOYSA-L 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007983 Tris buffer Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002952 polymeric resin Substances 0.000 abstract 1
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000010307 cell transformation Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 241000287828 Gallus gallus Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a conductive silver paste with grid electrode front of a crystalline silicon solar cell and a preparation method, wherein the conductive silver paste comprises the following components and contents (wt %): 50 to 70 wt % of metal sliver powder, 1 to 3 wt % of glass powder, 0.5 to 5 wt % of polymer resin, 1 to 10 wt % of a metal oxide and 10 to 20 wt % of a solvent; and the preparation method of the conductive silver paste with grid electrode front of a crystalline silicon solar cell comprises preparing materials, preparing a carrier, preparing sliver paste and producing silver paste materials. Compared with the prior art, the conductive silver paste with grid electrode front of a crystalline silicon solar cell and a preparation method provided by the invention have the advantages that the conversion efficiency of crystalline silicon cell is high, the volume resistance of the conductive silver paste material is low, the surface oxidation stability of sliver layer is improved well, the bonding strength between the sliver layer and the silicon is relatively high and the sliver paste has relatively good fine wire printability and relatively wide scope of sintering temperature.
Description
Technical field
The present invention relates to a kind of used for solar batteries conductive silver paste, especially relate to a kind of crystal silicon solar energy battery with front grid conductive silver paste and preparation method thereof.
Background technology
Solar energy is human inexhaustible regenerative resource. also is clean energy resource, do not produce any environmental pollution.In the middle of effective utilization of solar energy; Big sun can solar photovoltaic utilization be a research field with fastest developing speed in the last few years, most active, is one of project that wherein attracts most attention.Large-scale development with utilize photovoltaic solar generating; The photoelectric conversion efficiency that improves battery is its core place with reducing production costs; Since nearly ten years people to the solar cell theoretic knowledge further deeply, the improvement of production technology, the infiltration of IC technology and the appearance of new battery structure, the conversion efficiency of battery is greatly improved.
Along with solar power generation is more and more paid attention to by people, countries in the world are one after another at the exploitation solar module, and the production of 10 years photovoltaic modulies from now on will be with 20-30% even higher increasing velocity development.Fast-developing roof plan, various tax reduction and exemption policy and subsidy policy and ripe gradually green electric power supply price are that the development in photovoltaic market provides solid foundation.Market will be progressively by the alternative energy source transition of the additional energy in outlying district and rural area to the whole society.In prediction next century, photovoltaic generation becomes one of human basic energy resource.
The future prospect of photovoltaic is familiar with by more and more many national government and financial quarters (like the World Bank).Particularly many developed countries and the numerous and confused photovoltaic development plan of formulating in area since 97 years install 4.6GW (USDOE's planning contains 1,000,000 roof plans) like the U.S. to planning accumulative total in 2010; European Union's accumulative total is installed 6.7GW (regenerative resource white paper), and wherein 3.7GW is installed in inside, Europe, the 3GW outlet; Japan's accumulative total is installed 5GW (the new sunlight program of NEDO Japan), estimates the 1.8GW of other developing countries (estimating about 10%), and world's accumulative total is installed 18GW.Be more than 200 times in 1998, world's photovoltaic module price when the time comes: 1-1.5 dollar/Wp, installation cost be below 2 dollars, cost of electricity-generating 6-8 cent part/KWh.
This patent relates to used for solar batteries proprietary material-electrode slurry.Solar cell is to utilize to receive that solar light irradiation evokes electronics and the potential difference that produces and obtain electric energy.Because of the surface (phototropic face) of Si sheet makes P diffuse to form the n N-type semiconductor N as coexisting substances, the aluminium that utilizes at the back side diffuses to form P shape semiconductor, has so just formed the form that P-n engages.On the N type semiconductor front as output current can electrode uses is exactly conductive paste for solar cell.
The silver paste that generally uses at present is The foreign chicken products such as Dupont and FERRO; Mainly have following problem: the crystal silicon cell transformation efficiency is not high enough; The volume resistance of conductive silver paste is bigger; The silver layer surface non-oxidizability is relatively poor, and silver layer and silicon bond strength are general, and silver slurry sintering range is narrower.
Summary of the invention
The object of the invention be exactly provide in order to overcome the defective that above-mentioned prior art exists that a kind of crystal silicon cell conversion ratio is high, volume resistance is low, the fine rule printing preferably crystal silicon solar energy battery with front grid conductive silver paste and preparation method thereof.
The object of the invention can be realized through following technical scheme:
A kind of crystal silicon solar energy battery is characterized in that with front grid conductive silver paste this conductive silver paste comprises following component and content (wt%):
Silver powder 75-80;
Glass dust 1-3;
Macromolecule resin 0.5-5;
Organo-metallic compound 0.5-3;
Metal oxide 1-10;
Solvent 10-20.
Described silver powder is spherical silver powder, and the grain diameter of this silver powder is 0.4-1 μ m, and tap density is 3.5-5.0g/ml.
Described glass dust is lead-free glass powder, and sintering temperature is 680-780 ℃.
Described macromolecule resin comprises ethyl cellulose resin.
Described organo-metallic compound comprises Indium Tris acetylacetonate, acetylacetone,2,4-pentanedione gallium or copper naphthenate.
Described metal oxide is selected from one or more in zinc oxide, tin oxide or the titanium oxide.
Described solvent comprises 12 esters alcohol.
A kind of crystal silicon solar energy battery is characterized in that with the preparation method of front grid conductive silver paste this method may further comprise the steps:
(1) get the raw materials ready, get the raw materials ready according to following component and content (wt%):
Silver powder 75-80
Glass dust 1-3
Macromolecule resin 0.5-5
Organo-metallic compound 0.5-3
Metal oxide 1-10
Solvent 10-20;
(2) preparation of carrier: take by weighing macromolecule resin and solvent, be heated to 80 ℃ and constant temperature then, be dissolved to viscosity at the 15000-35000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, glass dust, organo-metallic compound and metal oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 800-1200PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
Compared with prior art, the present invention solves electric conductivity, non-oxidizability through spherical silver powder; Solve sintering range and bond strength through glass dust; Solve cell conversion efficiency through organo-metallic compound and metal oxide; Solve fine rule silk screen printing performance through resin and solvent; Thereby improve the crystal silicon cell transformation efficiency, reduce the volume resistance of conductive silver paste, improve the silver layer surface non-oxidizability; Silver layer and silicon bond strength are than higher; And silver slurry has the sintering range of fine rule printing and broad preferably, as monocrystalline silicon, polysilicon solar cell front grid conductive silver paste, import substitution product.
Description of drawings
Fig. 1 is the structural representation of solar components.
1 is that front grid conductive silver paste, 2 is that antireflection layer, 3 is that N type semiconductor, 4 is that P type semiconductor, 5 is backplate among the figure.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is elaborated.
Embodiment 1
A kind of crystal silicon solar energy battery is with the preparation method of front grid conductive silver paste, and this method may further comprise the steps:
(1) gets the raw materials ready, get the raw materials ready: silver powder 72kg, glass dust 2kg, macromolecule resin 3kg, organo-metallic compound 1kg, metal oxide 7kg, solvent 11kg according to following component.Used silver powder is spherical silver powder, and grain diameter is 0.4 μ m, tap density 4.0g/ml; Used glass dust is lead-free glass powder, and sintering temperature is 750 ℃; Used macromolecule resin is an ethyl cellulose, and viscosity grade is 4; Used organo-metallic compound is an Indium Tris acetylacetonate; Used metal oxide is a zinc oxide, average grain diameter 0.2 μ m; Used solvent is 12 esters alcohol;
(2) preparation of carrier: take by weighing ethyl cellulose and 12 esters alcohol, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at the 15000-25000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, lead-free glass powder, Indium Tris acetylacetonate and zinc oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 10 μ m, and viscosity is 800-1200PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
Above-mentioned silver slurry is sprayed on the solar components, and as shown in Figure 1, solar components comprises front grid conductive silver paste 1, antireflection layer 2, N type semiconductor 3, P type semiconductor 4 and backplate 5.Front grid conductive silver paste 1 is located at the top of antireflection layer 2, and the bottom of antireflection layer 2 is followed successively by N type semiconductor 3, P type semiconductor 4 and backplate 5, arranges in order.
Embodiment 2
(1) gets the raw materials ready, get the raw materials ready: silver powder 76kg, glass dust 2kg, macromolecule resin 3kg, organo-metallic compound 1kg, metal oxide 7kg, solvent 11kg according to following component.Used silver powder is spherical silver powder, and grain diameter is 0.6 μ m, tap density 4.4g/ml; Used glass dust is lead-free glass powder, and sintering temperature is 720 ℃; Used macromolecule resin is an ethyl cellulose, and viscosity grade is 7; Used organo-metallic compound is a copper naphthenate; Used metal oxide is a tin oxide, average grain diameter 0.2 μ m; Used solvent is 12 esters alcohol;
(2) preparation of carrier: take by weighing ethyl cellulose and 12 esters alcohol, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at the 25000-35000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, lead-free glass powder, copper naphthenate and tin oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 800-1200PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
Embodiment 3
(1) gets the raw materials ready, get the raw materials ready: silver powder 75kg, glass dust 3kg, macromolecule resin 0.5kg, organo-metallic compound 0.5kg, metal oxide 1kg, solvent 10kg according to following component.Used silver powder is spherical silver powder, and grain diameter is 0.4 μ m, tap density 3.5g/ml; Used glass dust is lead-free glass powder, and sintering temperature is 680 ℃; Used macromolecule resin is an ethyl cellulose, and viscosity grade is 5; Used organo-metallic compound is the acetylacetone,2,4-pentanedione gallium; Used metal oxide is a titanium oxide, average grain diameter 0.5 μ m; Used solvent is 12 esters alcohol;
(2) preparation of carrier: take by weighing ethyl cellulose and 12 esters alcohol, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at 15000 centipoises, with resin filtering and impurity removing on 300 purpose screen cloths, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, lead-free glass powder, acetylacetone,2,4-pentanedione gallium and titanium oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 8 μ m, and viscosity is 800PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
Embodiment 4
(1) gets the raw materials ready, get the raw materials ready: silver powder 80kg, glass dust 1kg, macromolecule resin 5kg, organo-metallic compound 3kg, metal oxide 10kg, solvent 20kg according to following component.Used silver powder is spherical silver powder, and grain diameter is 1 μ m, tap density 5.0g/ml; Used glass dust is lead-free glass powder, and sintering temperature is 780 ℃; Used macromolecule resin is an ethyl cellulose, and viscosity grade is 6; Used organo-metallic compound is a copper naphthenate; Used metal oxide is a zinc oxide, average grain diameter 0.3 μ m; Used solvent is 12 esters alcohol;
(2) preparation of carrier: take by weighing ethyl cellulose and 12 esters alcohol, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at 35000 centipoises, with resin filtering and impurity removing on 400 purpose screen cloths, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, lead-free glass powder, copper naphthenate and zinc oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 10 μ m, and viscosity is 1200PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
Claims (2)
1. a crystal silicon solar energy battery is characterized in that with front grid conductive silver paste, and this conductive silver paste comprises following component and content (wt%):
Silver powder 75-80;
Glass dust 1-3;
Macromolecule resin 0.5-5;
Organo-metallic compound 0.5-3;
Metal oxide 1-10;
Solvent 10-20;
Described silver powder is spherical silver powder, and the grain diameter of this silver powder is 0.4-1 μ m, and tap density is 3.5-5.0g/ml;
Described glass dust is lead-free glass powder, and sintering temperature is 680-780 ℃;
Described macromolecule resin comprises ethyl cellulose resin;
Described organo-metallic compound comprises Indium Tris acetylacetonate, acetylacetone,2,4-pentanedione gallium or copper naphthenate;
Described metal oxide is selected from one or more in zinc oxide, tin oxide or the titanium oxide;
Described solvent comprises 12 esters alcohol.
2. a crystal silicon solar energy battery is characterized in that with the preparation method of front grid conductive silver paste this method may further comprise the steps:
(1) get the raw materials ready, get the raw materials ready according to following component and content (wt%):
Described silver powder is spherical silver powder, and the grain diameter of this silver powder is 0.4-1 μ m, and tap density is 3.5-5.0g/ml; Described glass dust is lead-free glass powder; Sintering temperature is 680-780 ℃, and described macromolecule resin comprises ethyl cellulose resin, and described organo-metallic compound comprises Indium Tris acetylacetonate, acetylacetone,2,4-pentanedione gallium or copper naphthenate; Described metal oxide is selected from one or more in zinc oxide, tin oxide or the titanium oxide, and described solvent comprises 12 esters alcohol;
(2) preparation of carrier: take by weighing macromolecule resin and solvent, be heated to 80 ℃ and constant temperature then, be dissolved to viscosity at the 15000-35000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder, glass dust, organo-metallic compound and metal oxide, it is fully mixed in batch mixer with carrier, re-use high speed dispersor and disperse, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 800-1200PaS, makes crystal silicon solar energy battery with front grid conductive silver paste.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101979189A CN102054882B (en) | 2009-10-29 | 2009-10-29 | Conductive silver paste with grid electrode front of crystalline silicon solar cell and preparation method |
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| CN2009101979189A CN102054882B (en) | 2009-10-29 | 2009-10-29 | Conductive silver paste with grid electrode front of crystalline silicon solar cell and preparation method |
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| CN102054882B true CN102054882B (en) | 2012-07-18 |
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| CN102262916A (en) * | 2011-07-19 | 2011-11-30 | 彩虹集团公司 | Front silver paste for crystalline silicon solar cell and preparation method |
| CN102568648B (en) * | 2011-12-29 | 2014-06-18 | 广东爱康太阳能科技有限公司 | Conductive silver paste and preparation method thereof |
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| CN103093861A (en) * | 2013-02-17 | 2013-05-08 | 上海大洲电子材料有限公司 | Low-cost unleaded environmental protection silver paste for back electrode of silicon solar cell and application thereof |
| CN103440898B (en) * | 2013-08-06 | 2017-06-06 | 浙江光达电子科技有限公司 | A kind of front electrode of solar battery silver paste of low silver content and preparation method thereof |
| CN103578604B (en) * | 2013-09-22 | 2016-05-11 | 杭州正银电子材料有限公司 | A kind of silica-based solar cell main grid front electrode slurry of low silver content and preparation method thereof |
| CN103915248B (en) * | 2014-03-27 | 2016-09-28 | 深圳振华富电子有限公司 | The preparation method of base metal termination electrode inducer |
| JP6029720B2 (en) * | 2014-07-31 | 2016-11-24 | Ｄｏｗａエレクトロニクス株式会社 | Silver powder, method for producing the same, and conductive paste |
| JP6029719B2 (en) | 2014-07-31 | 2016-11-24 | Ｄｏｗａエレクトロニクス株式会社 | Silver powder, method for producing the same, and conductive paste |
| CN105761775B (en) * | 2014-12-18 | 2017-07-21 | 上海宝银电子材料有限公司 | A kind of chip inductor external electrode conductive silver paste and preparation method thereof |
| CN105590663B (en) * | 2016-01-07 | 2017-09-22 | 清华大学 | It is unleaded without bismuth conductive silver paste, the preparation method of silver grating line and silicon solar cell |
| CN107274962A (en) * | 2017-05-18 | 2017-10-20 | 江苏东昇光伏科技有限公司 | A kind of slurry used for solar batteries and preparation method thereof |
| CN109192396A (en) * | 2018-09-28 | 2019-01-11 | 王敏 | A kind of preparation method of anti-oxidative conductive silver paste thick-film material |
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| CN1540679A (en) * | 2003-04-21 | 2004-10-27 | 上海宝银电子材料有限公司 | Dedicated silve paste of stannum indium oxide and manufacturing method |
| CN101436442A (en) * | 2008-12-09 | 2009-05-20 | 彩虹集团公司 | Low-temperature conductive slurry |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540679A (en) * | 2003-04-21 | 2004-10-27 | 上海宝银电子材料有限公司 | Dedicated silve paste of stannum indium oxide and manufacturing method |
| CN101436442A (en) * | 2008-12-09 | 2009-05-20 | 彩虹集团公司 | Low-temperature conductive slurry |
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