CN102047346A - Methods using compositions containing submicron particles used in conductors for photovoltaic cells - Google Patents

Methods using compositions containing submicron particles used in conductors for photovoltaic cells Download PDF

Info

Publication number
CN102047346A
CN102047346A CN200980119901XA CN200980119901A CN102047346A CN 102047346 A CN102047346 A CN 102047346A CN 200980119901X A CN200980119901X A CN 200980119901XA CN 200980119901 A CN200980119901 A CN 200980119901A CN 102047346 A CN102047346 A CN 102047346A
Authority
CN
China
Prior art keywords
composition
submicron particles
thick film
silver
roasting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980119901XA
Other languages
Chinese (zh)
Inventor
H·杨
R·伊瑞扎瑞
P·J·奥利维耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102047346A publication Critical patent/CN102047346A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Embodiments of the invention relate to a silicon semiconductor device, and a conductive thick film composition for use in a solar cell device.

Description

The using method that comprises the composition of used submicron particles in the photovoltaic cell conductor
Invention field
Embodiment of the present invention relate to the Si semiconductor device, and the conductive thick film compositions that is used for solar battery apparatus.
The invention technical background
Conventional solar battery structure with p type substrate has negative pole that can be positioned at battery front side (being also referred to as plane of illumination and sensitive surface) and the positive pole that can be positioned at opposite side.The extra power that produces hole-duplet in this semiconductor is served as in radiation at the suitable wavelength of incident on the semi-conductive p-n junction.Because there is electrical potential difference in the p-n junction place, so hole and electronics stride across this knot with opposite direction and move, thus the electric current that generation can transmit electric power to external circuit.Most of solar cell is metallized silicon chip form,, has the hard contact of conduction that is.
Composition, structure (for example semiconductor, solar cell or photoelectric diode structure) and the semiconductor device (for example semiconductor, solar cell or photoelectric diode device) that need have the electric property and the preparation method of improvement.
Summary of the invention
One embodiment of the invention relate to composition, and described composition comprises: (a) one or more electric conducting materials; (b) one or more inorganic bonds; And (c) organic carrier, wherein 1% to 15% inorganic component is a submicron particles.In one embodiment, 85% to 99% inorganic component can have 1.5 to 10 microns d50.In one embodiment, one or more electric conducting materials can comprise silver.In one embodiment, a part of silver comprises submicron particles.In one embodiment, submicron particles has 0.1 to 1 micron d50.In one embodiment, submicron particles has 0.1 to 0.6 micron d50.In one embodiment, this particle has bimodal size distribution.
Composition can comprise one or more additives, and described additive is selected from: (a) metal, and wherein said metal is selected from zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (b) metal oxide of one or more metals, described one or more metals are selected from zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (c) when roasting, can generate any compound of the metal oxide of (b); And (d) their mixture.In one embodiment, additive can comprise ZnO or form the compound of ZnO when roasting.In one embodiment, ZnO and/or inorganic bond can comprise submicron particles.ZnO can account for 2 to 10 weight % of total composition.Frit can account for 1 to 6 weight % of total composition.Electric conducting material can comprise silver.Silver can account for 90 to 99 weight % of solid in the composition.In one embodiment, inorganic component can account for 70 to 95 weight % of total composition.
Another embodiment relates to a kind of method of making semiconductor device, said method comprising the steps of: semiconductor substrate, one or more dielectric film and thick film combination as herein described (a) are provided; (b) dielectric film is applied on the semiconductor substrate; (c) thick film combination is applied on the dielectric film of semiconductor substrate, and (d) roasting semiconductor, dielectric film and thick film combination.In one aspect, dielectric film can comprise one or more components, and described component is selected from: titanium oxide, silicon nitride, SiNx:H, silica and silica/titanium oxide.
Another embodiment relates to the semiconductor device made from methods described herein.An aspect relates to the semiconductor device that comprises electrode, and wherein electrode comprised composition described herein before roasting.An embodiment relates to the solar cell that comprises semiconductor device.
An embodiment relates to the semiconductor device that comprises semiconductor substrate, dielectric film and front electrode, and wherein front electrode comprises one or more components, and described component is selected from zinc silicate, willemite and bismuth silicate.
The accompanying drawing summary
Fig. 1 is the process chart that semiconductor device fabrication is shown.
Drawing reference numeral shown in Fig. 1 is described as follows.
10:p type silicon substrate
20:n type diffusion layer
30: silicon nitride film, oxidation titanium film or silicon oxide film
The 40:p+ layer (back of the body surface field, BSF)
60: the aluminium paste that forms on the back side
61: aluminium backplate (obtaining) by firing back side aluminium paste
70: the silver slurry or the silver/aluminium paste that form on the back side
71: silver-colored backplate or silver/aluminium backplate (obtaining) by firing the back silver slurry
500: the silver slurry that on the front, forms according to the present invention
501: according to silver-colored front electrode of the present invention (obtaining) by the roasting front side silver paste
Detailed Description Of The Invention
The solar cell that need to have more high efficiency improvement. Need to be suitable for forming and have the more electrically conductive composition of the narrow lead of high altitude. One aspect of the present invention relates to the composition that comprises submicron particles. These compositions can be thick film combination. These compositions can be used for forming the electrode of solar cell. This electrode can be positioned at solar battery front side. In one embodiment, electrode cable can be narrow and has higher height.
As used herein, " thick film combination " refers to have the composition of 1 to 100 micron thickness after roasting is to substrate. Thick film combination can comprise conductive material, glass composition and organic carrier. Thick film combination can comprise annexing ingredient. As used herein, annexing ingredient is called " additive ".
Composition described herein comprises one or more Electricity Functional materials and one or more frits that are dispersed in the organic media. These compositions can be thick film combination. These compositions also can comprise one or more additives. Exemplary additives can comprise metal, metal oxide or any compound that can generate these metal oxides when roasting.
In one embodiment, the Electricity Functional powder can be conducting powder. In one embodiment, composition for example conductive composition can in semiconductor device, use. Aspect of this embodiment, semiconductor device can be solar cell or photodiode. Aspect another of this embodiment, semiconductor device can be a kind of in the multiple semiconductor device. In one embodiment, semiconductor device can be solar cell.
In one embodiment, thick film combination described herein can be used in the solar cell. Aspect of this embodiment, the efficient of the comparable benchmark solar cell of the efficient of solar cell is high by 70%. In another embodiment, the efficient of the comparable benchmark solar cell of the efficient of solar cell is high by 80%. The comparable benchmark solar cell of the efficient of solar cell high by 90%.
In one embodiment, the organic media in the thick film combination and the ratio of the inorganic component in the dispersion can depend on the method that applies slurry and the type of used organic media, are specifically determined by those skilled in the art.In one embodiment, good wetting for obtaining, dispersion can comprise the inorganic component of 70 to 95 weight % and the organic media (carrier) of 5 to 30 weight %.
In one embodiment, the part of inorganic component can be submicron particles.Aspect of this embodiment, submicron particles can have 0.1 to 1 micron d50.In yet another aspect, submicron particles can have 0.1 to 0.8 micron d50.In yet another aspect, submicron particles can have 0.2 to 0.6 micron d50.
In one embodiment, submicron particles can account for 1 to 15 weight % of composition.In another embodiment, submicron particles can account for 2 to 10 weight % of composition.In another embodiment, submicron particles can account for 3 to 6 weight % of composition.
In one embodiment, submicron particles can comprise a part of electric conducting material.In one aspect, the electric conducting material of 1 to 15 weight % can be submicron particles.In yet another aspect, the electric conducting material of 2 to 10 weight % can be submicron particles.In yet another aspect, the electrically conductive composition of 3 to 6 weight % can be submicron particles.
In one embodiment, the part of composition can have 1.5 to 10 microns d50.Aspect of this embodiment, the inorganic component of 85 to 99 weight % of composition can have 1.5 to 10 microns d50.Aspect of this embodiment, the part of composition can have 2.0 to 7.0 microns d50.Aspect of this embodiment, the part of composition can have 2.5 to 5.0 microns d50.
In yet another aspect, electric conducting material can comprise silver.In one aspect, the electric conducting material of 50 to 100 weight % can be silver.In yet another aspect, the electric conducting material of 70 to 99 weight %, 70 to 98 weight % or 80 to 95 weight % can be silver.
Frit
In one aspect of the invention, composition comprises glass frit compositions.Can be used for glass frit compositions of the present invention is that those skilled in the art is easy to discern.For example, can use in the available glass frit compositions of composition that is used for preparing the front electrode of solar battery.Exemplary frit compositions comprises lead borosilicate glass.In one embodiment, can be used for glass frit compositions of the present invention and can comprise 20 to 24 weight %SiO 2, 0.2 to 0.8 weight %Al 2O 3, 40 to 60 weight %PbO and 5 to 8 weight %B 2O 3In one embodiment, glass frit compositions also can randomly comprise 3 to 7 weight %TiO 2In one embodiment, glass frit compositions also can randomly comprise one or more fluorine component, includes but not limited to: the salt of fluorine, fluoride, metal oxyfluoride compound etc.This type of fluorine component includes but not limited to PbF 2, BiF 3, AlF 3, NaF, LiF, KF, CsF, ZrF 4, TiF 4And/or ZnF 2In one embodiment, glass frit compositions can comprise 8 to 13 weight %PbF 2
Aspect another of this embodiment, thick film combination can comprise the electric work that is dispersed in the organic media can powder and glass ceramics material.In one embodiment, these thick film conductor compositions can be used in the semiconductor device.Aspect of this embodiment, semiconductor device can be solar cell or photodiode.
Electric conducting material
In one embodiment, thick film combination can comprise the function phase of giving the suitable electric work energy of composition character.In one embodiment, electric work can be conducting powder by powder.In one embodiment, electric work can comprise electric conducting material (this paper also is referred to as conductive particle) mutually.For example, conductive particle can comprise conducting powder, conductive foil or their mixture.
In one embodiment, conductive particle can comprise silver.In another embodiment, conductive particle can comprise silver (Ag) and aluminium (Al).In another embodiment, conductive particle can comprise for example following one or more: copper, gold, silver, palladium, platinum, aluminium, silver-palladium, platinum-Jin etc.In one embodiment, conductive particle can comprise following one or more: (1) aluminium, copper, gold, silver, palladium and platinum; (2) alloy of aluminium, copper, gold, silver, palladium and platinum; And (3) their mixture.
In one embodiment, the function of composition can comprise conductive silver particle coating or uncoated mutually.In an embodiment that applies silver particles, they are coated with surfactant at least in part.In one embodiment, surfactant can comprise following one or more non-limiting surfactants: stearic acid, palmitic acid, stearate, palmitate, laurate, palmitic acid, oleic acid, stearic acid, capric acid, myristic acid and linoleic acid and their mixture.Counter ion counterionsl gegenions can be but are not limited to hydrogen ion, ammonium ion, sodium ion, potassium ion and their mixture.
In one embodiment, silver can account for 60 to 90 weight % of paste compound.In another embodiment, silver can account for 70 to 85 weight % of paste compound.In another embodiment, silver can account for 75 to 85 weight % of paste compound.In another embodiment, silver can account for 78 to 82 weight % of paste compound.
In one embodiment, silver can account for 90 to the 99 weight % of (that is, not comprising organic carrier) of solid in the composition.In another embodiment, silver can account for 92 to 97 weight % of solid in the composition.In another embodiment, silver can account for 93 to 95 weight % of solid in the composition.
As used herein, " granularity " is intended to expression " particle mean size ", and " particle mean size " is meant 50% volume distributed median granularity.The volume distributed median granularity can be determined by many methods that those skilled in the art understands, include but not limited to use the laser diffraction and the process for dispersing of Microtrac Particle Size Analyzer.
In one embodiment, the part of electric conducting material can be submicron particles.Aspect of this embodiment, submicron particles can have 0.1 to 1 micron d50.In yet another aspect, submicron particles can have 0.1 to 0.8 micron d50.In yet another aspect, submicron particles can have 0.2 to 0.6 micron d50.
In one embodiment, the electric conducting material of 1 to 15 weight % can be submicron particles.In yet another aspect, the electric conducting material of 2 to 10 weight % can be submicron particles.In yet another aspect, the electrically conductive composition of 3 to 6 weight % can be submicron particles.
In one embodiment, the part of electric conducting material can have 1.5 to 10 microns d50.Aspect of this embodiment, the electric conducting material of 85 to 99 weight % can have 1.5 to 10 microns d50.Aspect of this embodiment, the part of electric conducting material can have 2.0 to 7.0 microns d50.Aspect of this embodiment, the part of electric conducting material can have 2.5 to 5.0 microns d50.
Additive
In one embodiment, thick film combination can comprise one or more additives.In one embodiment, additive can be selected from following one or more: (a) metal, wherein said metal is selected from zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (b) metal oxide of one or more metals, described one or more metals are selected from zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (c) when roasting, can generate any compound of the metal oxide of (b); And (d) their mixture.
In one embodiment, additive can comprise and contains zinc additive.Contain zinc additive can comprise following one or more: (a) zinc, (b) metal oxide of zinc (c) can generate any compound of the metal oxide of zinc when roasting, and (d) their mixture.In one embodiment, contain zinc additive and can comprise zinc resinate.
In one embodiment, contain zinc additive and can comprise ZnO.In one embodiment, the part of ZnO can comprise submicron particles.
In one embodiment, the scope of 2 to the 10 weight % that ZnO can total composition is present in the composition.In one embodiment, the scope of 3 to the 7 weight % that ZnO can total composition exists.In one embodiment, the scope of 4 to the 6 weight % that ZnO can total composition exists.
Organic media
In one embodiment, thick film combination described herein can comprise organic media.Inorganic component can mix with organic media to form slurry by for example mechanical agitation.Can be with multiple inert viscous materials as organic media.In one embodiment, organic media can make inorganic component to disperse therein with suitable stability.In one embodiment, the rheological properties of medium can give composition some application characteristic, comprising: the suitable wettability of the stable dispersion of solid matter, the viscosity that is suitable for silk screen printing and thixotropy, substrate and slurry solids material, good rate of drying and good roasting performance.In one embodiment, used organic carrier can be non-aqueous inert fluid in the thick film combination.Can expect using multiple organic carrier, described carrier can comprise or not comprise thickener, stabilizer and/or other typical additives.Organic media can be the solution of one or more polymer in one or more solvents.In one embodiment, organic media also can comprise one or more components, for example surfactant.In one embodiment, polymer can be ethyl cellulose.Other illustrative polymers are drawn together the mixture of ethylhydroxyethylcellulose, wood rosin, ethyl cellulose and phenolic resins, polymethacrylates and the single-butyl ether of ethylene glycol acetate or their mixture of lower alcohol.In one embodiment, available solvent comprises alcohol ester and terpenes in the thick film combination as herein described, for example α or β terpineol or they and other solvents mixture of kerosene, dibutyl phthalate, butyl carbitol, butyl carbitol acetate, hexylene glycol and high-boiling point alcohol and alcohol ester for example.In another embodiment, organic media can comprise volatile liquid, and this liquid helps quick-hardening after being applied on the substrate.
In one embodiment, the ratio of polymer in can for example 8 weight % to the 11 weight % scopes of total composition is present in the organic media.Can use organic media that the thick film silver composition is adjusted into viscosity predetermined, that can carry out silk screen printing.
The thick film combination of roasting
In one embodiment, can in dry and roasting semiconductor device process, remove organic media.In one aspect, can be in roasting process with frit, silver and additive sintering to form electrode.The roasting electrode can comprise component that roasting and sintering process produce, composition etc.
Aspect of this embodiment, semiconductor device can be solar cell or photodiode.
The preparation method of semiconductor device
An embodiment relates to the preparation method of semiconductor device.In one embodiment, semiconductor device can be used in the solar battery apparatus.Semiconductor device can comprise front electrode, and wherein positive (sensitive surface) electrode can comprise composition as herein described before roasting.
In one embodiment, the method for preparing semiconductor device may further comprise the steps: semiconductor substrate (a) is provided; (b) dielectric film is applied on the semiconductor substrate; (c) composition described herein is applied on the dielectric film; And (d) this device of roasting.
The exemplary semiconductor substrate that can be used in methods described herein and the device is that those skilled in the art are familiar with, and includes but not limited to: monocrystalline silicon, polysilicon, banded silicon etc.Semiconductor substrate can be the carrying node.Semiconductor substrate can be mixed with phosphorus and boron, to form the p/n knot.The doping method of semiconductor substrate is that those skilled in the art understand.
As is known to the person skilled in the art, size of semiconductor substrate (length x width) and thickness can change.In a limiting examples, the thickness of semiconductor substrate can be 50 to 500 microns, 100 to 300 microns or 140 to 200 microns.In a limiting examples, the length of semiconductor substrate and width all can be 100 to 250mm, 125 to 200mm or 125 to 156mm.
The exemplary insulated film that can be used in methods described herein and the device is that those skilled in the art are familiar with and includes but not limited to: silicon nitride, silica, titanium oxide, SiN x: H, hydrogenated amorphous silicon nitride and silica/oxidation titanium film.Dielectric film can pass through plasma enhanced chemical vapor deposition, chemical vapour deposition (CVD) and/or other technologies well known by persons skilled in the art and form.At dielectric film is in the embodiment of silicon nitride, and silicon nitride film can pass through plasma enhanced chemical vapor deposition (PECVD), thermal chemical vapor deposition or physical vapor deposition (PVD) technology and form.At dielectric film is in the embodiment of silica, and silicon oxide film can form by thermal oxidation, thermal chemical vapor deposition, PCVD or physical vapour deposition (PVD).Dielectric film (or layer) also can be called antireflection coatings (ARC).
Composition described herein can be applied on the semiconductor substrate that applies ARC by several different methods well known by persons skilled in the art, and described method includes but not limited to that silk screen printing, ink-jet, coextrusion, syringe distribute, directly describe and the aerosol ink-jet.In one embodiment, can use the method and apparatus of describing in the U.S. Patent Application Publication 2003/0100824 that composition is applied on the substrate, this patent is incorporated herein with way of reference in view of the above.Composition can be applied to pattern.Composition can be applied to reservation shape in the precalculated position.In one embodiment, can form the conductive fingers and the bus of front electrode with composition.In one embodiment, the conductor width of conductive fingers can be 10 to 200 microns, 40 to 150 microns or 60 to 100 microns.In one embodiment, the conductor width of conductive fingers can be 10 to 100 microns, 15 to 80 microns or 20 to 75 microns.In one embodiment, the conductor thickness of conductive fingers can be 5 to 50 microns, 10 to 35 microns or 15 to 30 microns.In another embodiment, can form conductivity silicon contact finger piece with composition.
As is known to the person skilled in the art, can will apply the composition dries that applies on the semiconductor substrate of ARC for example 0.5 to 10 minute, and then roasting.In one embodiment, can in dry run, remove volatile solvent and organic substance.Roasting condition is what those skilled in the art understood.In the non-limiting roasting condition of example, the silicon chip substrate is heated to the maximum temperature between 600 and 900 ℃, and the duration is 1 second to 2 minutes.In one embodiment, in the scope of the silicon chip maximum temperature that reaches in the roasting process between 650 to 800 ℃, the duration is 1 to 10 second.In another embodiment, carry out roasting in the atmosphere that the electrode that is formed by conductive thick film compositions can constitute at the mist by oxygen and nitrogen.This method of roasting removes the frit that contains silver powder in organic media and the sintering conductive thick film compositions.In another embodiment, the electrode that is formed by conductive thick film compositions can remove roasting in the inert atmosphere of oxygen-free gas more than the temperature at organic media.Base metal electric conducting material in this method of roasting sintering or the fusion thick film combination, for example copper.
In one embodiment, in the roasting process, can and be penetrated dielectric film with the dielectric film reaction, thereby and form between the silicon substrate and electrically contact by the electrode of roasting (preferred finger piece).
In another embodiment, before the roasting, other conductive means reinforcing materials are applied to the opposite-type region of semiconductor device, and with composition roasting described herein or roasting successively.The opposite-type region of semiconductor device is positioned at the opposite side of this device.This material serve as electrically contact, passivation layer and solderable fixed area.
In one embodiment, opposite-type region can be positioned at the non-sensitive surface (back side) of this device.Aspect of this embodiment, back side electric conducting material can comprise aluminium.The exemplary back side contains aluminum composition and applying method is for example being described among the US 2006/0272700 to some extent, and this patent is incorporated herein with way of reference in view of the above.
In yet another aspect, the solderable immobilization material can comprise aluminium and silver.The example fixation composition that contains aluminium and silver is for example being described among the US 2006/0231803 to some extent, and this patent is incorporated herein with way of reference in view of the above.
In another embodiment, because p district and n district are shaped side by side, be applied to the contiguous material described herein of material of device opposite-type region.This device all is arranged on the non-sensitive surface (back side) of device with the Metal Contact material, to increase the incident light in sensitive surface (front) to greatest extent.
Semiconductor device can be by the following method by the structural detail manufacturing, and described structural detail is made of the semiconductor substrate of carrying node and the silicon nitride insulating film that forms on its first type surface.The method of making semiconductor device may further comprise the steps: the conductive thick film compositions that can penetrate dielectric film applies (for example apply and print) to dielectric film with predetermined shape and in the precalculated position, carry out roasting then so that make the conductive thick film compositions fusion and penetrate dielectric film, thereby form and the electrically contacting of silicon substrate.Conductive thick film compositions is a thick-film paste composition, as described herein, described composition is by being dispersed in silver powder in the organic carrier, containing zinc additive, having 300 to 600 ℃ the glass of softening point or glass dust mixture and randomly additional metal/metal oxide additive and make.
One embodiment of the invention relate to the semiconductor device of making by methods described herein.The device that contains composition described herein can comprise zinc silicate, as mentioned above.
One embodiment of the invention relate to the semiconductor device of making as stated above.
Can use other substrates, device, manufacture method etc. of thick film combination described herein to describe to some extent in U.S. Patent Application Publication No. US 2006/0231801, US 2006/0231804 and US 2006/0231800, these patents are incorporated herein in full with way of reference in view of the above.
Embodiment
Polymer is dissolved in organic solvent with the preparation organic media under about 100 ℃.In organic media, add other compositions, comprise silver powder, frit, zinc oxide and other additives.Disperse the gained mixture by the three-roll rolling method that the thick film ink manufacturing industry is known.Form composition I, II and III shown in the table 1.
To before printing, filter from the slurry of composition I and II by Roki 40L-SHP-200XS bag type filter.Composition I II does not filter when using.
Under the room temperature, the 3D-450 Smart Pump that uses nScrypt Inc to make TMPrinter and reusable ID/OD 50/75 μ m pottery nib assessment slurry.Pump pressure is between 10psi and 100psi.Print speed is between 200mm/s and 300mm/s.Gap between nib and the substrate surface is 150 μ m.
Print 10 groups of 4 inches long lines, 150 ℃ baking oven inner dryings 20 minutes, roasting 2 minutes in the band oven of 850 ℃ of peak temperatures then.
Table I: silver-colored paste composition gathers
Composition Composition I Composition I I Composition I II
Silver powder I ?81.05
Silver powder II 81.05
Silver powder III ?81.05
Frit I ?2.5
Frit II 2.5
Frit III ?2.5
Zinc oxide ?5.5 5.5 ?5.5
Organic media ?10.95 10.95 ?10.95
*Weight % by total composition
Silver powder I is spherical and thin slice shape mixture, its granularity D10=0.88 micron, D50=4.60 micron, D95=10.73 micron.
Silver powder II is a spherical powder, its granularity D10=1.0 micron, and the D50=1.71 micron, D95=4.41 micron, surface area are 0.44m2/g.
Silver powder III is a spherical powder, its granularity D10=0.26 micron, and the D50=0.45 micron, the D95=1.67 micron, solids content is 99.5%.Its surface area is 1.0m2/g.
Frit I comprises SiO by the weight % of glass composition 223.0%, Al 2O 30.4%, PbO58.8% and B 2O 37.8%, its granularity D10=0.36 micron, D50=0.61 micron, D95=1.44 micron.
Frit II comprises SiO by the weight % of glass composition 222.08%, Al 2O 30.38%, PbO 46.68%, B 2O 36.79%, TiO 25.86%, PbF 210.72%, its granularity D10=0.42 micron, D50=0.77 micron, D90=1.96 micron.
Frit III comprises SiO by the weight of glass composition 222.08%, Al 2O 30.38%, PbO 46.68%, B 2O 36.79%, TiO 25.86%, PbF 210.72%, its granularity D10=0.34 micron, D50=0.50 micron, D95=0.89 micron.
Zinc oxide is available from Aldrich Chemicals.
Example I: under the situation of pump pressure less than 50psi, composition I can be passed through from 50/75 micron nib, stops up at the time inner pen tip less than 5 minutes.83 microns of the best roasting live widths of gained are high 13 microns.
Example II: under the situation of pump pressure less than 60psi, composition I can be passed through from 75/125 micron nib, stops up at the time inner pen tip less than 30 minutes.100 microns of the best roasting live widths of gained are high 12 microns.
EXAMPLE III: under the situation of pump pressure in 10psi to 100psi scope, composition I I can pass through from 50/75 micron nib, just stops through printing in 30 minutes at least.89 microns of the best roasting live widths of gained are high 19 microns.
EXAMPLE IV: under the situation of pump pressure in 10psi to 80psi scope, the percentage by weight ratio is that 95.5 to 4.5 composition I I and the blend of composition I II can pass through from 50/75 micron nib, just stops through printing in 3 hours at least.67 microns of the best roasting live widths of gained are high 25 microns.
EXAMPLE V: under the pump pressure greater than 30psi, composition I II can't pass 50/75 micron nib and print.Under 30psi, printing continues just to occur stopping up less than 5 seconds nibs.
Example VI: under the pump pressure greater than 60psi, composition I II can't pass 75/125 micron nib and print.Under 60psi, printing continues just to occur stopping up less than 5 minutes nibs.
Example VII A: the preparation composition I I of percentage by weight ratio in 90 to 10 to 10 to 90 scope and a series of blends of composition I II, and print.When composition I II greater than 30% the time, 50/75 micron nib stopped up in 1 minute.
Example VII A I: the efficient to above-mentioned printed base plate is analyzed.Exemplary efficiency test is provided below.It is predicted that the efficient of the solar cell of EXAMPLE IV is higher than the efficient of the solar cell of other embodiment.
Test program-efficient
Test is according to the conversion efficiency of the solar cell of methods described herein formation.Exemplary efficiency test method is provided below.
In one embodiment, will put into the commercial I-V tester (ST-1000) of efficiency of measurement according to the solar cell that methods described herein form.With the xenon arc lamp solar simulated of known strength in the I-V tester, and the irradiation battery front side.
Tester utilize the multiple spot contact method measure about 400 load resistances under being provided with electric current (I) and voltage (V) to determine the current-voltage curve of battery.Fill factor (FF) and efficient (Eff) are calculated by i-v curve.

Claims (14)

1. method of making semiconductor device said method comprising the steps of:
(a) provide semiconductor substrate, one or more dielectric film and thick film combination;
(b) described dielectric film is applied on the described semiconductor substrate,
(c) described thick film combination is applied on the dielectric film on the described semiconductor substrate, and
(d) the described semiconductor of roasting, dielectric film and thick film combination, wherein, described thick film combination comprises:
(a) one or more electric conducting materials;
(b) one or more inorganic bonds; With
(c) organic carrier,
Wherein, 1% to 15% described inorganic component is a submicron particles.
2. the method for claim 1, wherein described dielectric film comprises one or more components that are selected from down group: titanium oxide, silicon nitride, SiNx:H, silica and silica/titanium oxide.
3. the method for claim 1, wherein 85% to 99% described inorganic component has 1.5 to 10 microns d50.
4. the method for claim 1, wherein described one or more electric conducting materials comprise silver.
5. method as claimed in claim 4, wherein, described submicron particles comprises silver.
6. the method for claim 1, wherein described submicron particles has 0.1 to 1 micron d50.
7. the method for claim 1, wherein described submicron particles has 0.1 to 0.6 micron d50.
8. the method for claim 1, wherein described inorganic component has bimodal size distribution.
9. the method for claim 1, wherein described thick film combination also comprises one or more additives.
10. method as claimed in claim 9, wherein, described one or more additives comprise the component that is selected from down group: (a) metal, wherein said metal is selected from: zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (b) metal oxide of one or more metals, described one or more metals are selected from: zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, cobalt, iron, copper and chromium; (c) any compound of the metal oxide of generation (b) when roasting; And (d) their mixture.
11. method as claimed in claim 10, wherein, described one or more inorganic additives comprise ZnO.
12. method as claimed in claim 5, wherein, described submicron particles also comprises ZnO and inorganic bond.
13. the method for claim 1, wherein described one or more inorganic bonds comprise frit.
14. the method for claim 1, wherein described inorganic component accounts for 70 to 95 weight % of described total composition.
CN200980119901XA 2008-05-28 2009-05-28 Methods using compositions containing submicron particles used in conductors for photovoltaic cells Pending CN102047346A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5659708P 2008-05-28 2008-05-28
US61/056,597 2008-05-28
PCT/US2009/045405 WO2009146354A1 (en) 2008-05-28 2009-05-28 Methods using compositions containing submicron particles used in conductors for photovoltaic cells

Publications (1)

Publication Number Publication Date
CN102047346A true CN102047346A (en) 2011-05-04

Family

ID=40929538

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980119901XA Pending CN102047346A (en) 2008-05-28 2009-05-28 Methods using compositions containing submicron particles used in conductors for photovoltaic cells

Country Status (6)

Country Link
EP (1) EP2294585A1 (en)
JP (1) JP2011525700A (en)
KR (1) KR20110014674A (en)
CN (1) CN102047346A (en)
TW (1) TW201013700A (en)
WO (1) WO2009146354A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103146248A (en) * 2011-12-06 2013-06-12 太阳世界创新有限公司 Solar cell screen-printing composition, solar cell and method for manufacturing a metallization structure
CN103204632A (en) * 2012-01-14 2013-07-17 比亚迪股份有限公司 Conductive glass powder and its preparation method, crystalline silicon solar battery aluminum conductive paste and preparation method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2824672B1 (en) * 2013-07-09 2017-08-30 Heraeus Deutschland GmbH & Co. KG An electro-conductive paste comprising Ag particles with a multimodal diameter distribution in the preparation of electrodes in MWT solar cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
US7435361B2 (en) * 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103146248A (en) * 2011-12-06 2013-06-12 太阳世界创新有限公司 Solar cell screen-printing composition, solar cell and method for manufacturing a metallization structure
CN103146248B (en) * 2011-12-06 2015-09-30 太阳世界创新有限公司 The method of solar cell silk screen printing composition, solar cell and manufacture metallization structure
US9385259B2 (en) 2011-12-06 2016-07-05 Solarworld Innovations Gmbh Method for manufacturing a metallization structure comprising aluminum and silicon
CN103204632A (en) * 2012-01-14 2013-07-17 比亚迪股份有限公司 Conductive glass powder and its preparation method, crystalline silicon solar battery aluminum conductive paste and preparation method
CN103204632B (en) * 2012-01-14 2015-09-02 比亚迪股份有限公司 Conductive glass powder and preparation method thereof, crystal silicon solar energy battery aluminum conductive electric slurry and preparation method

Also Published As

Publication number Publication date
KR20110014674A (en) 2011-02-11
TW201013700A (en) 2010-04-01
EP2294585A1 (en) 2011-03-16
JP2011525700A (en) 2011-09-22
WO2009146354A1 (en) 2009-12-03

Similar Documents

Publication Publication Date Title
KR100837994B1 (en) Conductive compositions and processes for use in the manufacture of semiconductor devices
US8123985B2 (en) Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
KR101086183B1 (en) Thick film conductive composition and processes for use in the manufacture of semiconductor device
US8748304B2 (en) Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
CN102348657A (en) Glass compositions used in conductors for photovoltaic cells
CN102369168A (en) Glass compositions used in conductors for photovoltaic cells
CN102652118A (en) Glass compositions used in conductors for photovoltaic cells
CN102348656A (en) Glass compositions used in conductors for photovoltaic cells
CN102803167A (en) Glass compositions used in conductors for photovoltaic cells
US20130130435A1 (en) Thick film conductive composition and use thereof
CN102017014A (en) Compositions containing submicron particles used in conductors for photovoltaic cells
EP2750141B1 (en) An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in MWT solar cells
CN102047346A (en) Methods using compositions containing submicron particles used in conductors for photovoltaic cells
US20110278507A1 (en) Thick film silver pastes containing iodonium and/or sulfonium salts and their use in photovoltaic cells
US8008179B2 (en) Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers
US20110057314A1 (en) Conductors for photovoltaic cells
EP2750139B1 (en) An electro-conductive paste comprising a vanadium containing compound in the preparation of electrodes in MWT solar cells
CN102017013A (en) Conductors for photovoltaic cells: compositions containing submicron particles
US20150349148A1 (en) An electro-conductive paste comprising a vanadium containing compound and a phosphorous containing material in the preparation of electrodes in mwt solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110504