CN102044457B - Method for manufacturing metal bonding pad and corresponding metal bonding pad structure - Google Patents
Method for manufacturing metal bonding pad and corresponding metal bonding pad structure Download PDFInfo
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- CN102044457B CN102044457B CN2010101023252A CN201010102325A CN102044457B CN 102044457 B CN102044457 B CN 102044457B CN 2010101023252 A CN2010101023252 A CN 2010101023252A CN 201010102325 A CN201010102325 A CN 201010102325A CN 102044457 B CN102044457 B CN 102044457B
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/45001—Core members of the connector
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
The invention discloses a method for manufacturing a metal bonding pad and a corresponding metal bonding pad structure. A metal layer is additionally arranged on the original integrated circuit level, so the thickness of a metal layer on which wire bonding is to be performed is entirely increased to contribute to copper wire bonding and prevent punching phenomena; and the wire bonding can be finished by using the original bonding pad photomask, so a new photomask is not needed, or a design rule is not required to be changed. The structure comprises a semiconductor substrate, an insulating layer, a first window, a passivation layer and a second window, wherein an uppermost metal layer is arranged on the semiconductor substrate; the insulating layer covers the uppermost metal layer; the first window penetrates through the insulating layer and bonding pad metal is deposited in the first window; the passivation layer covers the insulating layer; the second window penetrates through the passivation layer and is communicated with the first window; and the bonding pad metal is deposited in the second window.
Description
Technical field
The present invention relates to the semiconductor packaging field, particularly relate to a kind of manufacturing approach and corresponding metal welding pad structure of metal pad.
Background technology
In the conventional semiconductor packages technology, use gold thread (Au wire) that chip is electrically connected on the chip bearing member like lead frame or substrate usually.Though gold thread conductivity is good, ductility good, its fancy price is inappropriate for commercial production for pursuing cheaply.For this reason, industry is devoted to the new material of research and utilization always and is replaced gold thread, realizes encapsulation.And copper cash has low price and hardness is high and newly-generated growth speed waits advantage slowly, for semiconductor industry has been brought new developing direction.
Yet, in copper cash Development of Packaging Technology process, also expose the problem that many needs overcome gradually.For example, gold thread is softer than copper cash material, and with identical technology routing on IC, gold thread can be littler than copper cash to the impulsive force of IC bed course, so the copper cash routing is bigger than normal than gold thread routing power, causes easily and punches phenomenon.
Specifically please refer to Fig. 1 to Fig. 3, it is the schematic flow sheet of the manufacture process of metal pad in the prior art.As shown in the figure, in existing technology, the thickness of topmost metal layer (LM) 10 is generally about 8KA, for example 7KA～9KA; Then, form a passivation layer 20 on it, then utilize photoresist layer 30 definition metal pad windows 22; Etching passivation layer 20 forms metal pad window 22; Then just can in this weld-padded window 22, form metal pad 40.
Because the copper cash routing is bigger than normal than gold thread, and the thickness of topmost metal layer (LM) 10 is generally about 8KA, causes punching the appearance of phenomenon easily.Be head it off, need thicken topmost metal layer 10, on existing copper cash technology basis, topmost metal layer 10 need be increased to 16KA and just be beneficial to routing.And topmost metal layer 10 is increased to 16KA, and design rule (design rule) just need relax, and in support large chip area, also need make mask again and just can overcome the above problems.
Summary of the invention
The object of the present invention is to provide a kind of manufacturing approach and corresponding metal welding pad structure of metal pad,, solve the problem that the copper cash routing is punched easily with not changing original design rule and not increasing newly under the situation of mask.
For solving above technical problem, the present invention provides a kind of metal pad structure, and it comprises: the semiconductor-based end, have a topmost metal layer on it; Insulating barrier is covered on the said topmost metal layer; First window runs through said insulating barrier, and deposits welding backing metal in this first window; Passivation layer is covered on the said insulating barrier; Second window through said passivation layer, is connected with first window, and deposits welding backing metal in this second window.
Further, the thickness of said insulating barrier is more than or equal to 7KA.
Further, said welding backing metal is an aluminum metal.
Further, said welding backing metal is an aluminium copper.
The present invention also provides a kind of manufacturing approach of metal pad, and it comprises: the semiconductor substrate is provided, has a topmost metal layer on it; On said topmost metal layer, form an insulating barrier; The said insulating barrier of etching is offered at least one first window above that; In said first window, deposit welding backing metal; On said insulating barrier, form a passivation layer; The said passivation layer of etching is offered at least one second window corresponding to said first position of window on said passivation layer; In said second window, deposit welding backing metal.
Further, the thickness of said insulating barrier is more than or equal to 7KA.
Further, said welding backing metal is an aluminum metal.
Further, said welding backing metal is an aluminium copper.
Further, the said insulating barrier of above etching, the process of offering at least one first window above that comprises: on said insulating barrier, form a photoresist layer; Utilize a weld pad mask on photoresist layer, to define first window; Exposure imaging, and the said insulating barrier of etching form first window through insulating barrier; Remove photoresist layer.
Further, the said insulating barrier of above etching, the process of offering at least one first window above that comprises: on said insulating barrier He in first window, deposit welding backing metal; Keep the welding backing metal in first window, utilize cmp to remove other welding backing metal.
Further, the said passivation layer of above etching comprises in the process of offering at least one second window corresponding to said first position of window on the said passivation layer: on said passivation layer, form a photoresist layer; Utilize a weld pad mask on photoresist layer, to define second window, and this second position of window is corresponding with said first position of window; Exposure imaging, and the said passivation layer of etching form second window through passivation layer; Remove photoresist layer.
It is thus clear that the manufacturing approach of above metal pad is to utilize original weld pad mask, increases by one time the photoetching level; Come to increase on the whole to desire routing metal layer thickness on it; Thereby help the copper cash routing, avoid punching the appearance of phenomenon, so; Promptly need not to increase new mask, also need not to change design rule.And the metal pad structure that utilizes this method to manufacture, with respect to the welding pad structure of prior art, thickness increases, and when utilizing the copper cash routing, has avoided punching the appearance of phenomenon.
Description of drawings
Fig. 1 to Fig. 3 is the schematic flow sheet of the manufacture process of metal pad in the prior art;
Fig. 4 is the flow chart of the manufacture process of the metal pad that one embodiment of the invention provided;
Fig. 5 to Figure 17 is the schematic flow sheet of the manufacture process of the metal pad that one embodiment of the invention provided.
Embodiment
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts exemplary embodiment, and conjunction with figs., elaborates as follows.
In order not change original design rule (design rule); And do not increase new mask, the present invention increases one metal level newly on original integrated circuit level; Desire routing metal layer thickness on it thereby increase on the whole, protect topmost metal layer (LM).Specifically please refer to Fig. 4 to Figure 17, describe the manufacturing approach of the metal pad that one embodiment of the invention provides in detail, wherein Fig. 4 is the flow chart of the manufacture process of the metal pad that one embodiment of the invention provided; Fig. 5 to Figure 17 is the detailed maps of above flow process.
As shown in Figure 4.This metal pad manufacture process comprises the steps:
S1: semiconductor substrate 100 is provided, has a topmost metal layer 110 on it;
S2: on topmost metal layer 110, form an insulating barrier 120;
S3: the said insulating barrier of etching, offer at least one first window above that;
S4: in said first window, deposit welding backing metal;
S5: on said insulating barrier, form a passivation layer;
S6: the said passivation layer of etching, on said passivation layer, offer at least one second window corresponding to said first position of window;
S7: in said second window, deposit welding backing metal.
Below in conjunction with Fig. 5 to Figure 17, describe above step in detail:
At first, as shown in Figure 5, semiconductor substrate 100 is provided, have a topmost metal layer 110 on it.Usually about the thickness 8KA of this topmost metal layer, 7KA to 9KA for example.
Then, as shown in Figure 6, on topmost metal layer 110, form an insulating barrier (IMD) 120.
Then carry out step S3, etching insulating barrier 120, to offer at least one first window 122 above that, specifically extremely shown in Figure 10: as on insulating barrier 120, to form a photoresist layer (photo resister) 130 like Fig. 7; Then, utilize a weld pad mask 140 on photoresist layer 130, to define first window; Exposure imaging, and etching insulating barrier 120 form first window 122 through insulating barrier 120; At last, remove photoresist layer 130.
Then, carry out step S4, deposition welding backing metal in first window 122; Specifically like Figure 11, shown in 12: at first, on insulating barrier 120 with in first window 122, deposit welding backing metal 150; Then, keep the welding backing metal 150 ' in first window 122, utilize cmp to remove other welding backing metal.Usually the thickness of insulating barrier 120 is at least 7KA, thereby makes the gross thickness of welding backing metal 150 ' and topmost metal layer 110 in the window 122 of winning reach 16KA, is beneficial to the copper cash routing in the follow-up encapsulation process.
Next, like Figure 13, on insulating barrier 120, form a passivation layer 160.And carry out step S6: this passivation layer 160 of etching, on passivation layer 160, offer at least one second window 162 corresponding to the position of first window 122.The forming process of this second window 162 is with the forming process of first window 122, and is specifically extremely shown in Figure 16 like Figure 14: on passivation layer 160, form a photoresist layer 170; And utilize weld pad mask 140 on photoresist layer, to define second window, and this second position of window is corresponding with first position of window; Then, exposure imaging, and etching passivation layer 160 form second window 162 through passivation layer 160; Then remove photoresist layer 170.
At last, shown in figure 17, deposition welding backing metal 180 in second window 162, and can realize the welding pad structure that metal level thickens.
Usually, welding backing metal 150 and 180 is an aluminum metal.Preferable, the welding backing metal material is an aluminium copper, promptly in aluminum material, adds the copper (being generally 1% to 2%) of certain ratio, to improve mobility.
It is thus clear that the manufacturing of above metal pad on the basis of original photoetching level, only increases the photoetching level one, increase on the whole and desire routing metal layer thickness on it, thereby help the copper cash routing, avoid punching the appearance of phenomenon.And it uses original weld pad mask to accomplish, and need not to increase new mask, also need not to change design rule.
Comparison diagram 3 and Figure 17, the metal pad structure that promptly more existing metal pad structure and present embodiment disclosed.Can find out the metal pad structure that present embodiment disclosed: on topmost metal layer 110, increased layer of metal, desired routing metal layer thickness on it, helped the copper cash routing thereby increase on the whole.Specifically describe the metal pad structure that above embodiment discloses below in conjunction with Figure 17.Concrete this metal pad structure comprises the semiconductor-based end 100, has a topmost metal layer 110 on it; Be coated with insulating barrier 120 on the topmost metal layer 110, be formed with first window 122 in this insulating barrier, it is through insulating barrier 120, to expose topmost metal layer 110; Deposit welding backing metal 150 in this first window 122.Be coated with passivation layer 160 on the insulating barrier 120; And be formed with second window 162 in this passivation layer 160 corresponding to first window 122; This second window 162 is through passivation layer 160, and is connected with first window 122, to expose the welding backing metal 150 in first window; Deposit welding backing metal 180 in this second window 162.
Usually, the thickness of topmost metal layer is 7～9KA, so the thickness of insulating barrier is at least 7KA, thereby makes the integral thickness of topmost metal layer and insulating barrier reach 16KA, is beneficial to the copper cash routing.
In addition, welding backing metal 150 and 180 is an aluminum metal.Preferable, the welding backing metal material is an aluminium copper, promptly in aluminum material, adds the copper (being generally 1% to 2%) of certain ratio, to improve mobility.
More than being merely for example, is not that protection scope of the present invention should be as the criterion with the scope that claims are contained in order to qualification the present invention.
Claims (11)
1. a metal pad structure is characterized in that, comprising:
The semiconductor-based end, has a topmost metal layer on it;
Insulating barrier is covered on the said topmost metal layer;
First window runs through said insulating barrier, and deposits welding backing metal in this first window;
Passivation layer is covered on the said insulating barrier;
Second window through said passivation layer, is connected with first window, and deposits welding backing metal in this second window.
2. metal pad structure according to claim 1 is characterized in that the thickness of said insulating barrier is more than or equal to 7KA.
3. metal pad structure according to claim 1 is characterized in that, said welding backing metal is an aluminum metal.
4. metal pad structure according to claim 1 is characterized in that, said welding backing metal is an aluminium copper.
5. the manufacturing approach of a metal pad is characterized in that, comprising:
The semiconductor substrate is provided, has a topmost metal layer on it;
On said topmost metal layer, form an insulating barrier;
The said insulating barrier of etching is offered at least one first window above that;
In said first window, deposit welding backing metal;
On said insulating barrier, form a passivation layer;
The said passivation layer of etching is offered at least one second window corresponding to said first position of window on said passivation layer;
In said second window, deposit welding backing metal.
6. the manufacturing approach of metal pad according to claim 5 is characterized in that, the thickness of said insulating barrier is more than or equal to 7KA.
7. the manufacturing approach of metal pad according to claim 5 is characterized in that, said welding backing metal is an aluminum metal.
8. the manufacturing approach of metal pad according to claim 5 is characterized in that, said welding backing metal is an aluminium copper.
9. the manufacturing approach of metal pad according to claim 5 is characterized in that, the said insulating barrier of above etching, and the process of offering at least one first window above that comprises:
On said insulating barrier, form a photoresist layer;
Utilize a weld pad mask on photoresist layer, to define first window;
Exposure imaging, and the said insulating barrier of etching form first window through insulating barrier;
Remove photoresist layer.
10. the manufacturing approach of metal pad according to claim 5 is characterized in that, the said insulating barrier of above etching, and the process of offering at least one first window above that comprises:
On said insulating barrier He in first window, deposit welding backing metal;
Keep the welding backing metal in first window, utilize cmp to remove other welding backing metal.
11. the manufacturing approach of metal pad according to claim 5 is characterized in that, the said passivation layer of above etching, and the process of on said passivation layer, offering at least one second window corresponding to said first position of window comprises:
On said passivation layer, form a photoresist layer;
Utilize a weld pad mask on photoresist layer, to define second window, and this second position of window is corresponding with said first position of window;
Exposure imaging, and the said passivation layer of etching form second window through passivation layer;
Remove photoresist layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101023252A CN102044457B (en) | 2010-01-28 | 2010-01-28 | Method for manufacturing metal bonding pad and corresponding metal bonding pad structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101023252A CN102044457B (en) | 2010-01-28 | 2010-01-28 | Method for manufacturing metal bonding pad and corresponding metal bonding pad structure |
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| CN102044457A CN102044457A (en) | 2011-05-04 |
| CN102044457B true CN102044457B (en) | 2012-03-28 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237327A (en) * | 2010-05-05 | 2011-11-09 | 北大方正集团有限公司 | Chip with thickened metal layer of press welding block and manufacturing method for chip |
| CN103050418B (en) * | 2011-10-13 | 2015-05-27 | 北大方正集团有限公司 | Pad manufacturing method and pad |
| CN104659024A (en) * | 2015-02-15 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Integrated circuit packaging method |
| CN113130335A (en) * | 2019-12-31 | 2021-07-16 | 盛合晶微半导体(江阴)有限公司 | Method for improving identification degree of bottom metal and welding pad |
| CN114783975B (en) * | 2022-06-21 | 2022-09-23 | 北京智芯微电子科技有限公司 | Buffer welding pad and manufacturing method thereof, and chip and manufacturing method thereof |
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| US6069066A (en) * | 1998-12-09 | 2000-05-30 | United Microelectronics Corp. | Method of forming bonding pad |
| US6709965B1 (en) * | 2002-10-02 | 2004-03-23 | Taiwan Semiconductor Manufacturing Company | Aluminum-copper bond pad design and method of fabrication |
| CN101465303A (en) * | 2007-12-21 | 2009-06-24 | 华邦电子股份有限公司 | Method for forming welding pad opening |
| CN101459087B (en) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Redistribution metal wire and manufacturing method for redistribution convex point |
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|---|---|---|---|---|
| US6069066A (en) * | 1998-12-09 | 2000-05-30 | United Microelectronics Corp. | Method of forming bonding pad |
| US6709965B1 (en) * | 2002-10-02 | 2004-03-23 | Taiwan Semiconductor Manufacturing Company | Aluminum-copper bond pad design and method of fabrication |
| CN101459087B (en) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Redistribution metal wire and manufacturing method for redistribution convex point |
| CN101465303A (en) * | 2007-12-21 | 2009-06-24 | 华邦电子股份有限公司 | Method for forming welding pad opening |
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