CN102043355A - Method for removing photoresist - Google Patents
Method for removing photoresist Download PDFInfo
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- CN102043355A CN102043355A CN2009102070084A CN200910207008A CN102043355A CN 102043355 A CN102043355 A CN 102043355A CN 2009102070084 A CN2009102070084 A CN 2009102070084A CN 200910207008 A CN200910207008 A CN 200910207008A CN 102043355 A CN102043355 A CN 102043355A
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Abstract
The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.
Description
Technical field
The present invention relates to a kind of method that removes photoresist.Particular words it, the present invention relates to a kind of elder generation base material carried out non-oxidizable pre-treatment destroying photoresist, and then make the method that photoresist is removed easily.
Background technology
In the manufacture process of semiconductor element, often use photoetching technique, predetermined pattern is transferred on the base material or to base material optionally handles.In this process, can on base material, form the uniform photo anti-corrosion agent material layer of a layer thickness earlier usually.Then, utilize exposure and the technology of developing again, patterning photo anti-corrosion agent material layer defines needed semiconductor element layout patterns.
The photoresist removal then is last step during Patternized technique or selectivity are handled, and it requires photoresist must remove fully totally, to guarantee the cleanliness factor of subsequent technique.Known mode all is to carry out the dry type photoresist with oxygen containing ashing (Ashing) technology to divest method (dry PR strip) mostly, this promptly utilizes oxygen containing plasma (oxygen plasma) to come and the photo anti-corrosion agent material reaction that is made of hydrocarbon, and then removed, but the problem of residual soot particle (ash) after need avoiding photo anti-corrosion agent material and containing the oxygen plasma precursor reactant, and this method consumes the silicon raw material in the base material easily.
Therefore, existing mode has sulfuric acid mixing hydrogen peroxide (the sulfuric-peroxide mix that utilizes high temperature again, SPM), come the photo anti-corrosion agent material of complete oxidation with its formed Caro's acid (Caro ' s acid), be called the wet type photoresist and divest method (wet PR strip) based on organic compound; So photo anti-corrosion agent material is removed, can avoid simultaneously silicon consumption of raw materials in each thin layer that the photo anti-corrosion agent material layer covered or the base material again.
Yet the making step of some semiconductor element may change the character of patterning photo anti-corrosion agent material layer, makes the sulfuric acid of high temperature and hydrogen peroxide potpourri can't meet expection the photo anti-corrosion agent material layer is removed on base material fully.In order to remove the photo anti-corrosion agent material layer smoothly, certainly will need a kind of novel method that removes photoresist, reach this purpose.
Summary of the invention
The present invention promptly is to propose a kind of novel method that removes photoresist, can either remove the photo anti-corrosion agent material layer smoothly, can take into account the integrality of polysilicon circuit on the base material again simultaneously.The present invention removes the novel method of photoresist, has the advantage that breaks through the conventional art obstacle, and is applicable in the manufacture process of semiconductor element.
So the present invention proposes a kind of method that removes photoresist.At first, provide base material, it comprises the patterning photoresist.Secondly, base material is carried out the ion implantation step.Then, base material is carried out non-oxidizable pre-treatment.Wherein non-oxidizable pre-treatment provides the treatment conditions that comprise hydrogen, carrier gas and plasma.Non-oxidizable pre-treatment can be carried out under interim temperature.The concentration of hydrogen can be between 4%-40%.In addition, can use nitrogen as carrier gas.The treatment conditions of plasma can be identical with the treatment conditions of plasma ashing step.Continue, base material is carried out the photoresist strip step, to remove photoresist fully.For example, can use the hydrogen peroxide solution of sulfuric acid to remove photoresist.Or, also can use the hydrogen peroxide solution of ammonia to remove photoresist.
The feature of the inventive method promptly is, base material is carried out non-oxidizable pre-treatment earlier, can destroy photoresist, can not cause the further oxidation of silicon substrate again, and then make photoresist be removed easily.The inventive method can also be taken into account the integrality of polysilicon circuit simultaneously.
Description of drawings
The present invention of Fig. 1-4 illustration removes the preferred implementation of photoresist agent method.
Description of reference numerals
101: base material
102: the polysilicon circuit
110: the patterning photoresist
120: admixture
130: hydrogen
Embodiment
The invention provides a kind of method that removes photoresist.The present invention of Fig. 1-4 illustration removes the preferred implementation of photoresist agent method, and it has can destroy photoresist, can not cause the further oxidation of silicon substrate again, and then takes into account the advantage of the integrality of polysilicon circuit simultaneously.At first, as shown in Figure 1, provide base material 101.Base material 101 is generally semiconductor substrate, for example silicon substrate.Base material 101 comprises patterning photoresist 110, is positioned at the end face of base material 101, or includes the material layer or the polysilicon circuit 102 of desiring to carry out patterning, for example grid structure, word line, bit line, resistance or fuse-wires structure etc. in addition.
According to different conditions of exposures, the photo anti-corrosion agent material layer can be positive light anti-etching agent or negative type photoresist.In addition, according to different exposure wavelength, the photo anti-corrosion agent material layer can comprise multiple different organic material, for example acrylate (acrylate), ketenes (vinyl ketone), tygon phenol (polyhydroxystyrene, PHS) or the like.Persons skilled in the art can be selected suitable photo anti-corrosion agent material according to different demands.
Secondly, as shown in Figure 2, base material 101 is carried out the making step of semiconductor element, for example ion injection, Cement Composite Treated by Plasma, etching step etc.With the ion implantation step is example, and this ion implantation step can be any ion implantation step that admixture 120 is imported the base material 101 that is not patterned the photoresist covering.Such as but not limited to, light drain electrode is mixed, and (LDD) ion injects, drain ion is injected or the source electrode ion injects or the like.This ion implantation step is to be used for base material 101 or the thin layer on it are mixed, but can influence the character of photoresist 110, for example becomes have the duricrust shape surface of (hard shell), and changes the character of photoresist 110 in fact.
For example, after some ion doping step, the character of patterning photo anti-corrosion agent material layer can change in fact to some extent because of the employed admixture of ion doping step, becomes have the duricrust shape surface of (hard shell).This surface has the photo anti-corrosion agent material layer of duricrust because become very hard, is difficult to divest fully with the sulfuric acid of high temperature and the potpourri of hydrogen peroxide again.Therefore, in order to divest the photo anti-corrosion agent material layer fully, just need the effect of longer time.Thus, though can remove the photo anti-corrosion agent material layer reluctantly, but also can hurt the quality of each thin layer that has been patterned on the base material simultaneously by way of parenthesis, especially polysilicon circuit, high temperature sulfuric acid and hydrogen peroxide strip process can seriously corrode polycrystalline silicon material for a long time, even cause the fracture of polysilicon circuit, so therefore semiconductor element lost efficacy.
Next, as shown in Figure 3, base material 101 is carried out non-oxidizable pre-treatment.This non-oxidizable pre-treatment meeting provides the treatment conditions that comprise hydrogen 130, carrier gas and plasma, to destroy photoresist 110.As previously mentioned, after the ion doping step, the character of patterning photo anti-corrosion agent material layer can change in fact to some extent because of the employed admixture of ion doping step, becomes have the duricrust shape surface of (hard shell).This surface has the photo anti-corrosion agent material layer of duricrust, is difficult to divest fully at short notice with the sulfuric acid of high temperature and the potpourri of hydrogen peroxide again.Therefore the present invention utilizes to carry out this non-oxidizable pre-treatment, makes the photo anti-corrosion agent material layer be easier to be subjected to the effect of the sulfuric acid and the hydrogen peroxide potpourri of high temperature.
Non-oxidizable pre-treatment meeting provides the treatment conditions that comprise hydrogen, carrier gas and plasma.The concentration of hydrogen for example can be between 4%-40%.In addition, can also use inert gas such as nitrogen as carrier gas.When carrying out non-oxidizable pre-treatment, preferably can under interim temperature, carry out.For example, heating source is positioned at the below of base material 101, and when temperature was controlled at 250 ℃, base material 101 is heat-treated 300 seconds under away from the low temperature of heating source earlier, and base material 101 positions shift near heating source more then, at high temperature continue to handle 150 seconds.The treatment conditions of plasma can be identical with the treatment conditions of plasma ashing step, changes the duricrust shape surface of photoresist 110, especially photoresist 110 with part.Should be appreciated that, at different semiconductor technology steps such as etching or injection, the etching of different photoresist types such as DUV photoresist or IR photoresist, photoresist process or inject employed different plant species or different energy or gas with various atmosphere or the like injected, can adjust above-mentioned non-oxidizable pre-treatment parameter such as temperature, time, upper/lower electrode energy or the like.
Non-oxidizable pre-treatment is a kind of non-oxidizing effect.Oxygen is not used in this non-oxidizable pre-treatment, or other known oxygenants, fluorine for example, and use non-oxidizing gas such as hydrogen, nitrogen, make the possible damage of base material and the element on it reduce to minimum.
Then, as shown in Figure 4, just can carry out the photoresist strip step to base material 101.The photoresist strip step preferably can remove patterning photoresist 110 fully.Can use known photoresist to divest mode, for example the wet-cleaning step is carried out the photoresist strip step.For example, use the hydrogen peroxide solution of sulfuric acid to remove patterning photoresist 110.Or, use the hydrogen peroxide solution of ammonia to remove patterning photoresist 110.Become and divest easily owing to patterning photoresist 110 has lived through non-oxidizable pre-treatment, so follow-up photoresist strip step can either remove patterning photoresist 110 fully, can not injure base material 101 in fact yet, for example be positioned at the polysilicon circuit 102 on the base material 101, and make polysilicon circuit 102 be maintained its integrality.
In the methods of the invention,, can make that photoresist is removed easily, can not cause the further oxidation of silicon substrate again, and then make the polysilicon lines rood to keep its integrality because base material was carried out non-oxidizable pre-treatment earlier.Therefore, the present invention removes the method for photoresist, has the advantage that breaks through the conventional art obstacle,
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
Claims (11)
1. method that removes photoresist comprises:
Base material is provided, and it comprises the patterning photoresist;
This base material is carried out the ion implantation step;
This base material is carried out non-oxidizable pre-treatment, and wherein this non-oxidizable pre-treatment provides the treatment conditions that comprise hydrogen, carrier gas and plasma; And
This base material is carried out the photoresist strip step, to remove this patterning photoresist fully.
2. method as claimed in claim 1, wherein this base material comprises silicon.
3. method as claimed in claim 1, wherein this ion implantation step is that light drain electrode is mixed.
4. method as claimed in claim 1, wherein this non-oxidizable pre-treatment comprises the plasma ashing step, to destroy this photoresist.
5. method as claimed in claim 1, wherein this carrier gas comprises inert gas.
6. method as claimed in claim 1 is wherein carried out this non-oxidizable pre-treatment under interim temperature.
7. method as claimed in claim 6 was wherein carried out this stage temperature between 150 seconds to 300 seconds.
8. method as claimed in claim 1, wherein this photoresist strip step comprises the hydrogen peroxide solution that uses sulfuric acid.
9. method as claimed in claim 1, wherein this photoresist strip step comprises the hydrogen peroxide solution that uses ammonia.
10. method as claimed in claim 1, wherein this photoresist strip step does not injure this base material in fact.
11. method as claimed in claim 1, wherein this photoresist strip step is the wet-cleaning step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102070084A CN102043355A (en) | 2009-10-23 | 2009-10-23 | Method for removing photoresist |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102070084A CN102043355A (en) | 2009-10-23 | 2009-10-23 | Method for removing photoresist |
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| CN102043355A true CN102043355A (en) | 2011-05-04 |
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| CN2009102070084A Pending CN102043355A (en) | 2009-10-23 | 2009-10-23 | Method for removing photoresist |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103163745A (en) * | 2011-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Removal method for photoresist layer and formation method for transistor |
| CN116259533A (en) * | 2023-05-12 | 2023-06-13 | 粤芯半导体技术股份有限公司 | Method for cleaning phosphoric acid etching residues, silicon wafer, processing method thereof and chip |
| CN116759348A (en) * | 2023-08-18 | 2023-09-15 | 合肥晶合集成电路股份有限公司 | Make up H 2 O 2 Liquid control method, control device thereof and control system thereof |
Citations (6)
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| CN1701414A (en) * | 2003-05-30 | 2005-11-23 | Psk有限公司 | Method for removing photoresist in semiconductor manufacturing process |
| JP2007134689A (en) * | 2005-10-14 | 2007-05-31 | Dainippon Screen Mfg Co Ltd | Substrate processing method and its device |
| JP2008004879A (en) * | 2006-06-26 | 2008-01-10 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
| US20080293252A1 (en) * | 2005-08-26 | 2008-11-27 | Dainippon Screen Mfg. Co., Ltd. | Resist removing method and resist removing apparatus |
| CN101354542A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist |
| US20090053901A1 (en) * | 2004-12-13 | 2009-02-26 | Novellus Systems Inc. | High dose implantation strip (hdis) in h2 base chemistry |
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2009
- 2009-10-23 CN CN2009102070084A patent/CN102043355A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1701414A (en) * | 2003-05-30 | 2005-11-23 | Psk有限公司 | Method for removing photoresist in semiconductor manufacturing process |
| US20090053901A1 (en) * | 2004-12-13 | 2009-02-26 | Novellus Systems Inc. | High dose implantation strip (hdis) in h2 base chemistry |
| US20080293252A1 (en) * | 2005-08-26 | 2008-11-27 | Dainippon Screen Mfg. Co., Ltd. | Resist removing method and resist removing apparatus |
| JP2007134689A (en) * | 2005-10-14 | 2007-05-31 | Dainippon Screen Mfg Co Ltd | Substrate processing method and its device |
| JP2008004879A (en) * | 2006-06-26 | 2008-01-10 | Dainippon Screen Mfg Co Ltd | Substrate processing method and substrate processing apparatus |
| CN101354542A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103163745A (en) * | 2011-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Removal method for photoresist layer and formation method for transistor |
| CN103163745B (en) * | 2011-12-15 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | The minimizing technology of photoresist layer, the formation method of transistor |
| CN116259533A (en) * | 2023-05-12 | 2023-06-13 | 粤芯半导体技术股份有限公司 | Method for cleaning phosphoric acid etching residues, silicon wafer, processing method thereof and chip |
| CN116759348A (en) * | 2023-08-18 | 2023-09-15 | 合肥晶合集成电路股份有限公司 | Make up H 2 O 2 Liquid control method, control device thereof and control system thereof |
| CN116759348B (en) * | 2023-08-18 | 2023-11-14 | 合肥晶合集成电路股份有限公司 | Make up H 2 O 2 Liquid control method, control device thereof and control system thereof |
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Application publication date: 20110504 |