CN102034426B - Organic light emitting display and driving method - Google Patents
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Abstract
An organic light emitting display and a driving method. The organic light emitting display includes a plurality of scan lines, a plurality of data lines, and a power line, the scan lines and the data lines are arranged in a cross manner, the scan lines and the data lines define a plurality of pixel units, and the pixel units include: the driving MOS tube, the first switch MOS tube, the storage capacitor, the organic light emitting diode and the threshold value compensation circuit are used for compensating threshold value drift of the driving MOS tube, so that current flowing through the driving MOS tube is not influenced by the threshold value drift of the driving MOS tube. The organic light emitting display improves the light emitting quality, and does not need to perform threshold value compensation by an external compensation circuit, thereby correspondingly simplifying the design complexity of a peripheral driving circuit and reducing the research and development and manufacturing cost.
Description
Technical field
The present invention relates to the display technique field, particularly OLED and driving method.
Background technology
OLED (OLED) is compared present main flow display technique Thin Film Transistor-LCD (TFT-LCD), has advantages such as wide viewing angle, high brightness, high-contrast, low energy consumption, volume be more frivolous, is the focus that present flat panel display is paid close attention to.
The driving method of OLED is divided into two kinds of passive matrix type (PM) and active-matrix formulas (AM).Compare passive matrix type and drive, the active-matrix formula drives has that display message is big, low in energy consumption, device lifetime long, the picture contrast advantages of higher.
With reference to shown in Figure 1, the equivalent electrical circuit of the pixel cell of a kind of active-matrix formula OLED of prior art comprises: switch transistor T 1, driving tube T2, MM CAP Cst and Organic Light Emitting Diode D1.Wherein, switch transistor T 1 is opened during by sweep signal Vsel gating at grid, introduces data-signal Vdata.Driving tube T2 is generally operational in the saturation region, and its gate source voltage Vgs has determined to flow through the size of its electric current, and then provides OLED D1 stable electric current.Vdd is voltage stabilizing or stabilized current supply, provides OLED D1 the energy of luminous needs.The effect of MM CAP Cst is in a frame time, keep driving tube T2 gate voltage stable.
Sweep signal Vsel and the portion waveshape simple and easy synoptic diagram of driving data signal Vdata of Fig. 2 when the OLED with pixel cell shown in Figure 1 driven.In conjunction with illustrated in figures 1 and 2; When first high level of sweep signal Vsel begins; Suppose that the capable pixel cell of n is by gating; Switch transistor T 1 in this row pixel cell is opened (grid of the switch transistor T 1 in the one-row pixels unit all receives same sweep signal Vsel usually), introduced data-signal and drive Vdata.Through the high level of driving data signal Vdata, the voltage charging that the pixel cell of this row is required is to grid and the MM CAP Cst of driving tube T2.After this row pixel cell charging is accomplished, close the switch transistor T 1 of this row pixel cell through first low level of sweep signal Vsel.At this moment, MM CAP Cst keeps the voltage in when charging, keeps the stable electric current of driving tube T2 output of this row pixel cell, makes that the Organic Light Emitting Diode D1 of this row pixel cell continues luminously to finish up to a frame time.It is double by the time interval of sweep signal gating with delegation's pixel cell that a said frame time is generally, and also is the complete cycle (a continuous high level+low level) of sweep signal Vsel among Fig. 2.
After the charging of the capable pixel cell of n is accomplished; The capable pixel cell of sweep signal gating n+1; The switch transistor T 1 of the capable pixel cell of n+1 is opened, introduced the driving data signal and carry out same charging process, charging is accomplished the back and is kept the voltage when charging through the MM CAP Cst in the pixel cell; Keep driving tube output steady current, make that the Organic Light Emitting Diode D1 of the capable pixel cell of n+1 continues luminously to finish up to a frame time.So go down in regular turn, after charging is accomplished for last column pixel cell, just charge again by row since the first row pixel cell again.When the capable pixel cell of n is charged again, second of sweep signal Vsel time that high level begins among Fig. 2 just.
The shortcoming of above-mentioned prior art pixel cell is; Driving tube T2 is sometimes owing to reasons such as for example threshold drift cause that electric current is unstable; Thereby can not provide sufficiently stable electric current like this to Organic Light Emitting Diode D1, with the luminous mass of the whole OLED of influence.
Summary of the invention
The problem that the present invention solves is in the pixel cell of prior art OLED, and driving tube can not provide steady current owing to threshold drift.
For addressing the above problem; The present invention provides a kind of OLED, comprises multi-strip scanning line, many data lines and power lead, said sweep trace and data line cross arrangement; Said sweep trace and data line define a plurality of pixel cells; Said pixel cell comprises: driven MOS pipe, the first switch MOS pipe, MM CAP Organic Light Emitting Diode and threshold compensation circuitry, wherein
The first switch MOS pipe according to the sweep trace sweep signal that pixel cell is expert at, is introduced the driving data signal of the data line of pixel cell place row;
MM CAP, the driving data signal that storage is introduced by this first switch MOS pipe;
The driven MOS pipe is stored in the driving data signal in the MM CAP according to this, controls this power lead and drives this light emitting diode;
Threshold compensation circuitry is used to compensate the threshold drift of driven MOS pipe.
Correspondingly; The present invention also provides a kind of driving method of above-mentioned OLED; Comprise: on power lead, apply voltage stabilizing or stabilized current supply, through sweep signal gating pixel cell line by line, wherein; During opening the first switch MOS pipe in the pixel cell through sweep signal and keeping gating; According to the demonstration needs of this row pixel cell, import corresponding driving data signal via the first switch MOS pipe in this row pixel cell to this row pixel cell, the time that said driving data signal begins to decay is later than the corresponding sweep signal gating concluding time of this row pixel cell.
Compared with prior art, such scheme OLED and driving method have the following advantages: the threshold compensation circuitry of above-mentioned OLED links to each other with the grid of driven MOS pipe.When said OLED is driven; The threshold drift of said threshold compensation circuitry compensation driven MOS pipe; Make the electric current that flows through the driven MOS pipe not receive the influence of the threshold drift of driven MOS pipe, keep stable thereby the driven MOS pipe offers the electric current of Organic Light Emitting Diode.Correspondingly, the luminous mass of whole OLED is improved.
And above-mentioned OLED is owing to need not to carry out valve value compensation by the external compensation circuit, thereby the also corresponding design complexities of simplifying peripheral drive circuit, has reduced research and development and manufacturing cost.
Description of drawings
Fig. 1 is the schematic equivalent circuit of pixel cell of a kind of active-matrix formula OLED of prior art;
Fig. 2 is sweep signal and the waveform synoptic diagram of driving data signal the when OLED with pixel cell shown in Figure 1 is driven;
Fig. 3 is the schematic equivalent circuit of a kind of embodiment of pixel cell in the OLED of the present invention;
Fig. 4 is sweep signal and the waveform synoptic diagram of data-signal the when OLED with pixel cell shown in Figure 3 is driven.
Embodiment
A kind of embodiment of OLED of the present invention comprises multi-strip scanning line, many data lines and power lead; Said sweep trace and data line cross arrangement; Said sweep trace and data line define a plurality of pixel cells; Said pixel cell comprises: driven MOS pipe, the first switch MOS pipe, MM CAP Organic Light Emitting Diode and threshold compensation circuitry, wherein
The first switch MOS pipe according to the sweep trace sweep signal that pixel cell is expert at, is introduced the driving data signal of the data line of pixel cell place row;
MM CAP, the driving data signal that storage is introduced by this first switch MOS pipe;
The driven MOS pipe is stored in the driving data signal in the MM CAP according to this, controls this power lead and drives this light emitting diode;
Threshold compensation circuitry is used to compensate the threshold drift of driven MOS pipe.
In the embodiment of above-mentioned OLED; Through being arranged at the threshold drift of the threshold compensation circuitry compensation driven MOS pipe in the pixel cell; Make the electric current that flows through the driven MOS pipe not receive the influence of the threshold drift of driven MOS pipe, keep stable thereby the driven MOS pipe offers the electric current of Organic Light Emitting Diode.
Below further specify through the structure and the course of work of instantiation above-mentioned OLED.
A kind of embodiment of OLED of the present invention comprises: sweep signal control module and the M bar sweep trace that is electrically connected with it, data-signal control module and the N bar data line and 1 or the N bar power lead that are electrically connected with it; Said sweep trace and data line cross arrangement; Said sweep trace and data line define a plurality of pixel cells, and said a plurality of pixel cells form M (M=1,2; 3 ...) row N (N=1; 2,3 ...) row pixel unit array, wherein first the row pixel cell be the redundant sub-pixels unit.With reference to shown in Figure 3; The equivalent electrical circuit of the pixel cell that the 2nd～M is capable comprises: driven MOS pipe T11, the first switch MOS pipe T12, mirror image metal-oxide-semiconductor T13, second switch metal-oxide-semiconductor T14, MM CAP C11, coupling capacitance C12 and Organic Light Emitting Diode D11; Wherein
The first switch MOS pipe T12, its grid links to each other with the sweep trace that pixel cell is expert at, and receives the corresponding sweep signal V of said capable pixel cell
n(n>=2), drain electrode links to each other with the data line of pixel cell place row, receives the driving data signal Vdata of said row, and at said capable pixel cell by sweep signal V
nOpen during gating, introduce driving data signal Vdata;
MM CAP C11, its two ends are connected to the drain electrode of source electrode and the driven MOS pipe T11 of the first switch MOS pipe T12;
Coupling capacitance C12, its two ends are connected to the source electrode of the first switch MOS pipe T12 and the grid of driven MOS pipe T11;
Mirror image metal-oxide-semiconductor T13, its grid is connected in the grid of driven MOS pipe T11 jointly with draining, and source electrode is connected in the source electrode of the first switch MOS pipe T12, and it has the threshold drift characteristic identical with driven MOS pipe T11;
Second switch metal-oxide-semiconductor T14, its grid links to each other with the lastrow sweep trace that pixel cell is expert at, and receives the sweep signal V of said lastrow
N-1, drain electrode is connected to the source electrode of the first switch MOS pipe T12, source electrode is connected to public electrode voltages, and at said lastrow pixel cell by sweep signal V
N-1During gating, form the path of mirror image metal-oxide-semiconductor T13 to public electrode voltages;
Driven MOS pipe T11, its drain electrode is connected to power lead Vdd, and source electrode is connected to the positive pole of Organic Light Emitting Diode D11;
Organic Light Emitting Diode D11, its negative pole is connected to public electrode voltages.
In the equivalent electrical circuit of the capable pixel cell of above-mentioned the 2nd～M, public electrode voltages is generally ground voltage, the low-voltage that perhaps requirement is provided with according to circuit working.Voltage stabilizing or stabilized current supply line Vdd are used for providing OLED D11 the luminous required energy through driven MOS pipe T11.
The equivalent electrical circuit of the first row pixel cell and the equivalent electrical circuit of the capable pixel cell of the 2nd～M are basic identical, and difference only is that the grid of the first switch MOS pipe T12 is vacant with drain electrode, and the grid of second switch metal-oxide-semiconductor T14 is vacant.Because said vacant setting, the first row pixel cell does not have any outer signal except voltage stabilizing or stabilized current supply, therefore form the redundant sub-pixels unit.
Preferably, said driven MOS pipe T11, the first switch MOS pipe T12, mirror image metal-oxide-semiconductor T13 and second switch metal-oxide-semiconductor T14 are the NMOS pipe.
Preferably, said power lead is configured to apply voltage stabilizing or stabilized current supply.
Preferably, said data-signal control module comprises latch, is used to latch the driving data signal, and during by gating, imports corresponding driving data signal to this row pixel cell in the one-row pixels unit.
Be illustrated below in conjunction with the course of work of accompanying drawing above-mentioned equivalent electrical circuit.Need to prove, below related high level and low level be merely the gating on the presentation logic exemplarily and close, be not in order to limit the height of corresponding voltage.And, below the scanning of each row pixel cell is still undertaken by capable as prior art.Be convenient explanation in addition, define each metal-oxide-semiconductor and be the NMOS pipe that said public electrode voltages is a ground voltage.
In conjunction with Fig. 3 and shown in Figure 4, when the capable pixel cell of sweep signal gating n-1, the corresponding sweep signal V of the capable pixel cell of n-1
N-1Be high level, second switch metal-oxide-semiconductor T14 is held open, and the corresponding sweep signal V of the capable pixel cell of n
nBe low level, the first switch MOS pipe T12 closes.
At this moment, the voltage of the A of grid place of driven MOS pipe T11, and the voltage of the B of source electrode place of the first switch MOS pipe T12 all begins to descend, the voltage at coupling capacitance C12 two ends is also along with variation.The A point voltage drops to the threshold voltage V of mirror image metal-oxide-semiconductor T13
Th-T13, perhaps can be described as V
T0-T13+ Δ V
Th-T13(V
T0-T13The threshold value initial value of mirror image metal-oxide-semiconductor T13 when not considering changes of threshold, Δ V
Th-T13Threshold voltage variation value for mirror image metal-oxide-semiconductor T13), thereby mirror image metal-oxide-semiconductor T13 closes, and the size of the voltage at coupling capacitance C12 two ends also is changed to the threshold voltage V of mirror image metal-oxide-semiconductor T13
Th-T13And the B point voltage drops to ground voltage.
When the capable pixel cell of sweep signal gating n, the corresponding sweep signal V of the capable pixel cell of n-1
N-1Be low level, second switch metal-oxide-semiconductor T14 closes.And the corresponding sweep signal V of the capable pixel cell of n
nBe high level, the first switch MOS pipe T12 opens, and introduces the driving data signal Vdata on the data line, and this MM CAP C11 is charged to store this driving data signal Vdata.
Subsequently, data-signal Vdara makes the B point voltage be lifted to Vdata, because the effect of coupling capacitance C12, the A point voltage is lifting Vdata also.At this moment, the A point voltage becomes Vdara+V
T0-T13+ Δ V
Th-T13
At this moment, if the A point voltage is greater than the threshold voltage of driven MOS pipe T11, driven MOS pipe T11 opens, power lead through driven MOS pipe T11 to this light emitting diode output current to drive this lumination of light emitting diode.The electric current that flows through said driven MOS pipe T11 can following equation expression:
I＝k(V
gs-V
th)
2 (1)
Here, k is a constant, and the gate source voltage V of driven MOS pipe T11
Gs=V
g-V
sThe grid voltage V of driven MOS pipe T11
gBe exactly the A point voltage, and the source voltage V of driven MOS pipe T11
sCut-in voltage V for Organic Light Emitting Diode D11
D11Therefore, the gate source voltage V of driven MOS pipe T11
GsFor:
V
gs＝Vdata+V
T0-T13+ΔV
th-T13-V
D11 (2)
And the threshold voltage V of driven MOS pipe T11
Th-T11Can be expressed as:
V
th-T11＝V
T0-T11+ΔV
th-T11 (3)
V wherein
T0-T11The threshold value initial value of driven MOS pipe T11 when not considering changes of threshold, Δ V
Th-T11Threshold voltage variation value for driven MOS pipe T11.
Formula (2), (3) substitution (1) are got,
I＝k(V
gs-V
th)
2＝k(Vdata+V
T0-T13+ΔV
th-T13-V
D11-V
T0-T1-ΔV
th-T1)
2 (4)
Because the grid of driven MOS pipe T11 and the grid of mirror image metal-oxide-semiconductor T13 link together, therefore can think that driven MOS pipe T11 is identical all the time with the gate voltage of mirror image metal-oxide-semiconductor T13.Because the threshold drift of metal-oxide-semiconductor is influenced by its gate voltage, and because driven MOS pipe T11 is identical with the threshold drift characteristic of mirror image metal-oxide-semiconductor T13, therefore under identical gate voltage; Driven MOS pipe T11 and mirror image metal-oxide-semiconductor T13 threshold drift situation; Be that variations in threshold voltage is consistent, promptly
ΔV
th-T13＝ΔV
th-T11 (5)
Formula (5) substitution formula (4) can be got,
I＝k(Vdata+V
T0-T3-V
D11-V
T0-T1)
2 (6)
Can see that from formula (6) electric current and the variations in threshold voltage that flow through driven MOS pipe T11 are irrelevant.That is to say that when driven MOS pipe T11 threshold of appearance value drift, when promptly threshold voltage changed, the electric current that flows through driven MOS pipe T11 can not receive the influence of threshold drift yet, therefore realized the valve value compensation effect.Because the electric current that flows through driven MOS pipe T11 can not receive the influence of threshold drift, it is just more stable that said driven MOS pipe T11 offers the electric current of Organic Light Emitting Diode D11, also guaranteed the luminous mass of Organic Light Emitting Diode D11.Correspondingly, because the luminous mass of light emitting diode D11 is guaranteed in the single pixel cell, the luminous mass of whole OLED has also obtained raising.
Can see from above-mentioned explanation; For the capable pixel cell of n; It constitutes the valve value compensation structure through coupling capacitance C12, mirror image metal-oxide-semiconductor T13, second switch metal-oxide-semiconductor T14 in fact; Utilized the corresponding sweep signal of the capable pixel cell of n-1, the threshold value of mirror image metal-oxide-semiconductor T13 has been write driven MOS pipe T11, to assist to realize final valve value compensation.Because the embodiment of above-mentioned pixel cell need not to carry out valve value compensation by the external compensation circuit, thereby the also corresponding design complexities of simplifying peripheral drive circuit, has reduced research and development and manufacturing cost.
Correspondingly, the present invention also provides a kind of driving method of OLED.A kind of embodiment according to said driving method; It comprises: the drain electrode to the driven MOS pipe provides voltage stabilizing or stabilized current supply; Through sweep signal gating pixel cell line by line; Wherein, during opening the first switch MOS pipe in the pixel cell through sweep signal and keeping gating, according to the demonstration needs of this row pixel cell; The first switch MOS pipe via in this row pixel cell is imported corresponding driving data signal to this row pixel cell, and the time that said driving data signal begins to decay is later than the corresponding sweep signal gating concluding time of this row pixel cell.
Have in the driving process of OLED of pixel cell shown in Figure 3 in correspondence, the threshold voltage of said driving data signal corresponding voltage value and mirror image metal-oxide-semiconductor and greater than the threshold voltage of driven MOS pipe.
In the above-mentioned driving method, the time of the one-period of the sweep signal that each row pixel cell is corresponding is all identical, a promptly aforesaid frame time.
In the above-mentioned driving method, the data-signal of corresponding one-row pixels unit is latched in advance, and during by gating, said data-signal is simultaneously via this row pixel cell of first switch MOS pipe input at this row pixel cell.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (9)
1. OLED; Comprise multi-strip scanning line, many data lines and power lead; Said sweep trace and data line cross arrangement, said sweep trace and data line define a plurality of pixel cells, and said pixel cell comprises: driven MOS pipe, the first switch MOS pipe, MM CAP, Organic Light Emitting Diode and threshold compensation circuitry; Wherein
The first switch MOS pipe according to the sweep trace sweep signal that pixel cell is expert at, is introduced the driving data signal of the data line of pixel cell place row;
MM CAP, the driving data signal that storage is introduced by this first switch MOS pipe;
The driven MOS pipe is stored in the driving data signal in the MM CAP according to this, controls this power lead and drives this light emitting diode;
Threshold compensation circuitry is used to compensate the threshold drift of driven MOS pipe;
Said threshold compensation circuitry comprises a coupling capacitance and a mirror image metal-oxide-semiconductor; Said mirror image metal-oxide-semiconductor has the threshold drift characteristic identical with said driven MOS pipe; The threshold value of this mirror image metal-oxide-semiconductor of said coupling capacitance storage, and said threshold value is coupled the driving data signal of said MM CAP with the threshold drift of compensation driven MOS pipe;
Said coupling capacitance, its two ends are connected to the drain electrode of the said first switch MOS pipe and the grid of said driven MOS pipe;
Said mirror image metal-oxide-semiconductor, its grid is connected in the grid of said driven MOS pipe jointly with draining, and source electrode is connected in the drain electrode of the said first switch MOS pipe;
The threshold compensation circuitry of the 1st row pixel cell also comprises: the second switch metal-oxide-semiconductor; Its grid is vacant, and drain electrode is connected to the drain electrode of the first switch MOS pipe, and source electrode is connected to public electrode voltages; And the grid of the first switch MOS pipe of said the 1st row pixel cell is vacant with drain electrode;
The threshold compensation circuitry of n (n >=2) row pixel cell also comprises: the second switch metal-oxide-semiconductor; Its grid links to each other with the sweep trace that the capable pixel cell of n-1 is expert at; Receive the corresponding sweep signal of the capable pixel cell of said n-1, drain electrode is connected to the drain electrode of the first switch MOS pipe, and source electrode is connected to public electrode voltages; And open during by the sweep signal gating at the capable pixel cell of said n-1, form the path of mirror image metal-oxide-semiconductor to public electrode voltages.
2. OLED as claimed in claim 1 is characterized in that,
The said first switch MOS pipe, its grid links to each other with the sweep trace that pixel cell is expert at, and source electrode links to each other with the data line of pixel cell place row;
Said MM CAP, its two ends are connected to the drain electrode of the said first switch MOS pipe and the drain electrode of said driven MOS pipe;
Said driven MOS pipe, its drain electrode is connected to power lead, and source electrode is connected to the positive pole of said Organic Light Emitting Diode;
Said Organic Light Emitting Diode, its negative pole is connected to public electrode voltages.
3. according to claim 1 or claim 2 OLED is characterized in that, said driven MOS pipe, the first switch MOS pipe, mirror image metal-oxide-semiconductor and second switch metal-oxide-semiconductor are the NMOS pipe.
4. according to claim 1 or claim 2 OLED is characterized in that said power lead is configured to apply voltage stabilizing or stabilized current supply.
5. according to claim 1 or claim 2 OLED is characterized in that, also comprises:
The sweep signal control module is electrically connected with said multi-strip scanning line, and control puts on sweep signal on the sweep trace with gating pixel cell line by line;
And the data-signal control module, be electrically connected with said many data lines, during the one-row pixels unit is by gating, import corresponding driving data signal to this row pixel cell.
6. OLED as claimed in claim 5 is characterized in that, said data-signal control module comprises latch, is used to latch the driving data signal, and during by gating, imports corresponding driving data signal to this row pixel cell in the one-row pixels unit.
7. the driving method of an OLED as claimed in claim 1; Comprise: on power lead, apply voltage stabilizing or stabilized current supply; Through sweep signal gating pixel cell line by line; Wherein, During opening the first switch MOS pipe in the capable pixel cell of n through sweep signal and keeping gating,, import corresponding driving data signal to this row pixel cell via the first switch MOS pipe in this row pixel cell according to the demonstration needs of this row pixel cell; The threshold voltage of said driving data signal corresponding voltage value and mirror image metal-oxide-semiconductor and greater than the threshold voltage of driven MOS pipe, the time that said driving data signal begins to decay is later than the corresponding sweep signal gating concluding time of this row pixel cell.
8. the driving method of OLED as claimed in claim 7; It is characterized in that; The data-signal of corresponding one-row pixels unit is latched in advance, and during by gating, said data-signal is simultaneously via this row pixel cell of first switch MOS pipe input at this row pixel cell.
9. the driving method of OLED as claimed in claim 7 is characterized in that, the time of the one-period of the sweep signal that each row pixel cell is corresponding is all identical, is the time of a frame.
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| CN102708819B (en) | 2012-05-10 | 2014-08-13 | 北京京东方光电科技有限公司 | Pixel drive circuit and drive method, array substrate and display unit thereof |
| CN103093721B (en) * | 2013-01-30 | 2015-09-30 | 四川虹视显示技术有限公司 | A kind of AMOLED pixel-driving circuit and method |
| CN103309507B (en) | 2013-05-30 | 2016-05-11 | 京东方科技集团股份有限公司 | A kind of display driver circuit, method and display unit of touching |
| CN104167177A (en) | 2014-08-15 | 2014-11-26 | 合肥鑫晟光电科技有限公司 | Pixel circuit, organic electroluminescence display panel and display device |
| CN106531074B (en) * | 2017-01-10 | 2019-02-05 | 上海天马有机发光显示技术有限公司 | Organic light emissive pixels driving circuit, driving method and organic light emitting display panel |
| CN110379365B (en) * | 2019-07-22 | 2021-03-16 | 高创(苏州)电子有限公司 | Organic light-emitting display panel, display device and driving method |
| CN110767191A (en) * | 2019-10-24 | 2020-02-07 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit structure of liquid crystal display panel |
| CN113971936B (en) | 2020-07-23 | 2023-09-29 | 京东方科技集团股份有限公司 | Display panel and driving method thereof |
| CN111883048B (en) * | 2020-08-11 | 2021-07-30 | 上海天马微电子有限公司 | Light emitting diode array substrate driving circuit, method, module, panel and device |
| CN114822415A (en) * | 2022-05-27 | 2022-07-29 | 云谷（固安）科技有限公司 | Pixel driving circuit, driving method of pixel driving circuit and display panel |
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