CN102033378A - Pixel array - Google Patents
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- CN102033378A CN102033378A CN 201010507440 CN201010507440A CN102033378A CN 102033378 A CN102033378 A CN 102033378A CN 201010507440 CN201010507440 CN 201010507440 CN 201010507440 A CN201010507440 A CN 201010507440A CN 102033378 A CN102033378 A CN 102033378A
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Abstract
The invention discloses a pixel array, comprising a plurality of pixel structure groups. Each pixel structure group comprises a first scanning line and a second scanning line which are arranged on a substrate in parallel, a data line arranged in unparallel with the first scanning line and the second scanning line, a first active component electrically connected with the first scanning line and the data line, a second active component electrically connected with the second scanning line and the data line, a first pixel electrode electrically connected with the first active component, a second pixel electrode electrically connected with the second active component, and an auxiliary electrode pattern, wherein the adjoining part of the first pixel electrode and the second pixel electrode is provided with a gap, and the auxiliary electrode pattern comprises an interconnecting piece, a first branch and a second branch; the interconnecting piece is arranged below the gap between the first pixel electrode and the second pixel electrode, and is overlapped with parts of the first pixel electrode and the second pixel electrode; and the first branch is connected with the interconnecting piece and is overlapped with part of the first pixel electrode, and the second branch is connected with the interconnecting piece and is overlapped with part of the second pixel electrode.
Description
Technical field
The present invention relates to a kind of pel array, and particularly relevant for a kind of pel array of display panel.
Background technology
Advantages such as LCD has that high image quality, volume are little, in light weight, low voltage drive, low consumpting power and applied range, (Cathode Ray Tube CRT) becomes the main flow of display of new generation therefore to have replaced cathode-ray tube (CRT).Generally speaking, display panels mainly is made of active component array base board, colored optical filtering substrates and liquid crystal layer.
In more detail, active component array base board is formed by the thin film transistor (TFT) of a plurality of arrayed and with the pixel electrode (pixel electrode) of the corresponding configuration of each thin film transistor (TFT), and wherein thin film transistor (TFT) is used as the on-off element of liquid crystal display.In addition, in order to control other dot structure, usually can be through scan wiring (scan line) and data wiring (date line) choosing specific dot structure, and by suitable operating voltage is provided, to show the video data of corresponding this dot structure.On the practice,, can in each dot structure, capacitance electrode line be set usually in order to keep the operating voltage of (holding) dot structure.The overlapping region that utilizes pixel electrode and capacitance electrode line is to form storage capacitors.
Yet being provided with of capacitance electrode line will make the aperture opening ratio of dot structure reduce.Therefore, the aperture opening ratio that how to increase dot structure also is one of emphasis of develop actively.
Summary of the invention
The invention provides a kind of pel array, the auxiliary electrode pattern in its dot structure has particular design, to increase the aperture opening ratio of dot structure.
The present invention proposes a kind of pel array, comprises a plurality of dot structure groups, and each dot structure group comprises first sweep trace and second sweep trace that is set in parallel on the substrate; Data line with first sweep trace and the not parallel setting of second sweep trace; First active member with first sweep trace and data line electric connection; Second active member with second sweep trace and data line electric connection; First pixel electrode with the electric connection of first active member; With second pixel electrode that second active member electrically connects, wherein first pixel electrode and second pixel electrode have the space in abutting connection with part; And auxiliary electrode pattern.Particularly, the auxiliary electrode pattern comprises connecting portion, first branching portion and second branching portion.Connecting portion is arranged on the below in the space between first pixel electrode and second pixel electrode, and it is overlapping with part first pixel electrode and part second pixel electrode, first branching portion is connected with connecting portion and is overlapping with part first pixel electrode, and second branching portion is connected with connecting portion and is overlapping with part second pixel electrode.
The present invention proposes a kind of pel array in addition, comprises a plurality of dot structure groups, and each dot structure group comprises first sweep trace and second sweep trace that is set in parallel on the substrate; The data line of itself and first sweep trace and the not parallel setting of second sweep trace; First active member with first sweep trace and data line electric connection; Second active member with second sweep trace and data line electric connection; First pixel electrode with the electric connection of first active member; Second pixel electrode with the electric connection of second active member; And auxiliary electrode pattern.Particularly, the auxiliary electrode pattern comprises connecting portion, first branching portion and second branching portion: connecting portion is arranged on the below in the space between first pixel electrode and second pixel electrode substantially.First branching portion is connected with connecting portion and is vertical with connecting portion substantially.Second branching portion is connected with connecting portion and is vertical with connecting portion substantially, and wherein connecting portion, first branching portion and second branching portion constitute H shape.
Based on above-mentioned, the connecting portion of auxiliary electrode pattern of the present invention is arranged on the below in the space between first pixel electrode and second pixel electrode.Therefore the connecting portion of auxiliary electrode pattern can cover the light leak of the gap between first pixel electrode and second pixel electrode.In addition, the auxiliary electrode pattern also can be further used as the electrode of capacitor, and its layout area compared to the traditional capacitance electrode pattern is little, thereby can increase the aperture opening ratio of dot structure.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram of pel array according to an embodiment of the invention;
Fig. 2 is the synoptic diagram of pel array according to another embodiment of the present invention;
Fig. 3 is the diagrammatic cross-section of Fig. 2 along profile line A-A '.
Wherein, Reference numeral
U, U1, U2: dot structure group PU1, PU2: dot structure
10: substrate 20: insulation course
SL1～SL4: sweep trace DL: data line
T1～T4: active member P1～P4: pixel electrode
G1～G4: grid C1～C4: passage
S1～S4: source electrode D1～D4: drain electrode
V1～V6: contact hole 102,202: auxiliary electrode pattern
102a, 202a: connecting portion 102b, 202b: first branching portion
102c, 202c: the second branching portion 102d, 202d: the 3rd branching portion
102e, 202e: the 4th branching portion 120: bridging structure
130: syndeton d1, d2, d3: width
Embodiment
Fig. 1 is the synoptic diagram of pel array according to an embodiment of the invention.Please refer to Fig. 1, the pel array of present embodiment comprises a plurality of dot structure group U.In order to describe in detail, the wherein one group of dot structure group U that only shows among Fig. 1 in the pel array is that example illustrates.In general, pel array is to arrange institute by a plurality of dot structure group U to constitute, and is to have comprised two dot structure PU1, PU2 among each dot structure group U of present embodiment.These those skilled in the art are in the one-piece construction that should be appreciated that pel array according to following explanation to dot structure group U.
Dot structure group U comprises the first sweep trace SL1, the second sweep trace SL2, data line DL, the first active member T1, the second active member T2, the first pixel electrode P1, the second pixel electrode P2 and the auxiliary electrode pattern 102 that is arranged on the substrate 10.
The first sweep trace SL1 and the second sweep trace SL2 are arranged on the substrate 10 in parallel with each other.Data line DL is arranged on the substrate 10 and is not parallel with the first sweep trace SL1 and the second sweep trace SL2 in addition.In the present embodiment, the first sweep trace SL1 and the second sweep trace SL2 and data line DL setting interlaced with each other.In other words, the bearing of trend of the bearing of trend of data line DL and the first sweep trace SL1 and the second sweep trace SL2 is not parallel, and preferably, the bearing of trend of data line DL is vertical with the bearing of trend of the first sweep trace SL1 and the second sweep trace SL2.In addition, the first sweep trace SL1 and the second sweep trace SL2 belong to different retes with data line DL.Based on the consideration of electric conductivity, the first sweep trace SL1 and the second sweep trace SL2 and data line DL generally are to use metal material.But, the invention is not restricted to this, according to other embodiment, the first sweep trace SL1 and the second sweep trace SL2 and data line DL also can use other conductive materials.For example: the oxides of nitrogen of the nitride of alloy, metal material, the oxide of metal material, metal material or other suitable material) or metal material and other lead the stack of layers of material.
The first active member T1 and the first sweep trace SL1 and data line DL electrically connect.In addition, the second active member T2 and the second sweep trace SL2 and data line DL electrically connect.More specifically, the first active member T1 comprises grid G 1, channel C 1, source S 1 and drain D 1.The grid G 1 and the first sweep trace SL1 electrically connect.Channel C 1 is positioned at the top of grid G 1.Source S 1 and drain D 1 are positioned at the top of channel C 1, and source S 1 electrically connects with data line DL.The second active member T2 comprises grid G 2, channel C 2, source S 2 and drain D 2.The grid G 2 and the second sweep trace SL2 electrically connect.Channel C 2 is positioned at the top of grid G 2.Source S 2 and drain D 2 are positioned at the top of channel C 2, and source S 2 electrically connects with data line DL.The first above-mentioned active member T1 and the second active member T2 are to be that example illustrates with the bottom grid film transistor, but the invention is not restricted to this.According to other embodiment, the above-mentioned first active member T1 and the second active member T2 are also with the top grid type thin film transistor (TFT).
The first pixel electrode P1 and the first active member T1 electrically connect.The second pixel electrode P2 and the second active member T2 electrically connect.According to present embodiment, the first pixel electrode P1 electrically connects by the drain D 1 of the contact hole V1 and the first active member T1.The second pixel electrode P2 electrically connects by the drain D 2 of the contact hole V2 and the second active member T2.The first pixel electrode P1 and the second pixel electrode P2 can be transparent conductive material or reflective conductive material.Described transparent conductive material comprises metal oxide, for example is indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide or other suitable oxide or the above-mentioned stack of layers of the two at least.Described reflective conductive material comprises metal.
In addition, the first pixel electrode P1 and the second pixel electrode P2 have space 110 in abutting connection with part.In other words, the first pixel electrode P1 and the second pixel electrode P2 independently electrode pattern of respectively doing for oneself, and be electrically insulated each other between the two.In addition, in the present embodiment, the first pixel electrode P1 and the second pixel electrode P2 are all between the first sweep trace SL1 and the second sweep trace SL2.In other words, the first sweep trace SL1 and the second sweep trace SL2 are positioned at the top of this dot structure group U and below.
The above-mentioned first sweep trace SL1, data line DL, the first active member T1 and the first pixel electrode P1 constitute dot structure PU1.The above-mentioned second sweep trace SL2, data line DL, the second active member T2 and the second pixel electrode P1 constitute dot structure PU2.
In addition, auxiliary electrode pattern 102 comprises connecting portion 102a, the first branching portion 102b, the second branching portion 102c, the 3rd branching portion 102d and the 4th branching portion 102e.According to present embodiment, auxiliary electrode pattern 102 comprises the shading conductive material, and it for example is the nitride of alloy, metal material, the oxide of metal material, oxides of nitrogen or other suitable material of metal material) or metal material and other lead the stack of layers of material.According to present embodiment, the auxiliary electrode pattern 102 and the first sweep trace SL1 and the second sweep trace SL2 belong to same rete.In addition, auxiliary electrode pattern 102 can adopt and the first/the second sweep trace SL1/SL2 identical materials.But, the invention is not restricted to this.
The connecting portion 102a of auxiliary electrode pattern 102 is arranged on the below in the space 110 between the first pixel electrode P1 and the second pixel electrode P2.Connecting portion 102a is further overlapping with part first pixel electrode P1 and the part second pixel electrode P2.According to present embodiment, connecting portion 102a is that the parallel first sweep trace SL1 and the second sweep trace SL2 are provided with.
The first branching portion 102b of auxiliary electrode pattern 102 is connected with connecting portion 102a and is overlapping with the left side of the first pixel electrode P1.In the present embodiment, the first branching portion 102b is connected with connecting portion 102a and is vertical with connecting portion 102a substantially.In addition, first branching portion 102b almost parallel data line DL and the adjacent setting.
The second branching portion 102c of auxiliary electrode pattern 102 is connected with connecting portion 102a and is overlapping with the left side of the second pixel electrode P2.In the present embodiment, the second branching portion 102c is connected with connecting portion 102a and is vertical with connecting portion 102a substantially.In addition, second branching portion 102c almost parallel data line DL and the adjacent setting.
The 3rd branching portion 102d of auxiliary electrode pattern 102 is connected with connecting portion 102a and is overlapping with the right side of the first pixel electrode P1.In the present embodiment, the 3rd branching portion 102d is connected with connecting portion 102a and is vertical with connecting portion 102a substantially.In addition, the 3rd branching portion 102d almost parallel data line DL is provided with.
The 4th branching portion 102e of auxiliary electrode pattern 102 is connected with connecting portion 102a and is overlapping with the right side of the second pixel electrode P2.In the present embodiment, the 4th branching portion 102e is connected with connecting portion 102a and is vertical with connecting portion 102a substantially.In addition, the 4th branching portion 102e almost parallel data line DL is provided with.
Therefore, the connecting portion 102a of present embodiment, the first branching portion 102b, the second branching portion 102c, the 3rd branching portion 102d and the 4th branching portion 102e roughly constitute H shape.
According to present embodiment, the connecting portion 102a of auxiliary electrode pattern 102 is arranged on the below in the space 110 between the first pixel electrode P1 and the second pixel electrode P2.Therefore the connecting portion 102a of auxiliary electrode pattern 102 can cover the light leak at 110 places, space between the first pixel electrode P1 and the second pixel electrode P2.
In addition, above-mentioned auxiliary electrode pattern 102 also can be used as capacitance electrode except the effect that can reach shading.Described capacitance electrode can be to be used for transmitting common voltage (common voltage), or does not transmit the floating electrode/shading electrode of any voltage.In more detail, the connecting portion 102a of above-mentioned first pixel electrode P1 and auxiliary electrode pattern 102 and the overlapping part of the first branching portion 102b can constitute first capacitor, and it can be used as the reservior capacitor of dot structure PU1.In other words, the first pixel electrode P1 is the top electrode as first capacitor, the part connecting portion 102a and the first branching portion 102b are the bottom electrodes as first capacitor, are positioned at dielectric layer (not illustrating) between the first pixel electrode P1 (top electrode) and connecting portion 102a and the first branching portion 102b (bottom electrode) and then are the capacitance dielectric layer as first capacitor.Similarly, the connecting portion 102a of the second pixel electrode P2 and auxiliary electrode pattern 102 and the overlapping part of the second branching portion 102c can constitute second capacitor, and it can be used as the reservior capacitor of dot structure PU2.In other words, the second pixel electrode P2 is the top electrode as second capacitor, the part connecting portion 102a and the second branching portion 102c are the bottom electrodes as second capacitor, are positioned at dielectric layer (not illustrating) between the second pixel electrode P2 (top electrode) and connecting portion 102a and the second branching portion 102c (bottom electrode) and then are the capacitance dielectric layer as second capacitor.
According to one embodiment of the invention, the width (d1) of the connecting portion 102a of above-mentioned auxiliary electrode pattern 102 is greater than the width (d2) of the first branching portion 102b/ the 3rd branching portion 102d, and the width of connecting portion 102a (d1) is also greater than the width (d3) of the second branching portion 102c/ the 4th branching portion 102e.In other words, connecting portion 102a has enough wide width thereby can be simultaneously overlapping with part first pixel electrode P1 and the part second pixel electrode P2.
Based on above-mentioned, because the first pixel electrode P1 of present embodiment and the second pixel electrode P2 are overlapping with the reservior capacitor of formation dot structure PU1 and the reservior capacitor of dot structure PU2 with the connecting portion 102a of auxiliary electrode pattern 102 separately.In other words, the reservior capacitor of the reservior capacitor of dot structure PU1 and dot structure PU2 uses the part of the connecting portion 102a of auxiliary electrode pattern 102 as its bottom electrode jointly.Therefore, the dot structure of present embodiment has high aperture opening ratio compared to the conventional pixel structure.With the dot structure of same size, use auxiliary electrode design of patterns of the present invention, can promote about 2.1% aperture opening ratio.
Fig. 2 is the synoptic diagram of pel array according to another embodiment of the present invention.Fig. 3 is the diagrammatic cross-section of Fig. 2 along profile line A-A '.The embodiment of Fig. 2 is similar to Fig. 1, so components identical or similar element represent with identical label, and no longer repeats to give unnecessary details.In this special instruction is that Fig. 2 is that wherein two dot structure group U1, U2 of showing in the pel array explain, and has two dot structures separately among dot structure group U1, the U2.Basically, the composition of dot structure group U2 is identical or similar to dot structure group U1 with structure, and dot structure group U2 dot structure group U1 adjacency.
Please refer to Fig. 2, dot structure group U1 comprises sweep trace SL1, SL2, data line DL, active member T1, T2, pixel electrode P1, P2 and auxiliary electrode pattern 102.Dot structure group U2 comprises sweep trace SL3, SL4, data line DL, active member T3, T4, pixel electrode P3, P4 and auxiliary electrode pattern 202.Sweep trace SL3, SL4 parallel scan lines SL1, SL2 are provided with, and the adjacent arrangement with SL3 of sweep trace SL2.Active member T3, T4 and active member T1, T2 have grid G 3, G4, channel C 3, C4, source S 3, S4 and drain D 3 equally, D4 pixel electrode P3 electrically connects by contact hole V3 and active member T3, and pixel electrode P4 electrically connects by contact hole V4 and active member T4.
Particularly, the auxiliary electrode pattern 102 of dot structure group U1 comprises connecting portion 102a, the first branching portion 102b, the second branching portion 102c, the 3rd branching portion 102d and the 4th branching portion 102e.The auxiliary electrode pattern 202 of dot structure group U2 comprises connecting portion 202a, the first branching portion 202b, the second branching portion 202c, the 3rd branching portion 202d and the 4th branching portion 202e.
In the present embodiment, this pel array more comprises syndeton 130, and it electrically connects the auxiliary electrode pattern 102 of dot structure group U1 and the auxiliary electrode pattern 202 among the dot structure group U2.More specifically, please be simultaneously with reference to Fig. 2 and Fig. 3, this syndeton 130 comprises bridging structure 120, contact hole V5 and contact hole V6.
According to present embodiment, bridging structure 120 is to stride across sweep trace SL2, SL3 and electrically connect with the auxiliary electrode pattern 202 of the auxiliary electrode pattern 102 of dot structure group U1 and dot structure group U2.Particularly, accompany insulation course 20 between bridging structure 120 and sweep trace SL2, the SL3, so that bridging structure 120 is electrically insulated with sweep trace SL2, SL3, as shown in Figure 3.Insulation course 20 can be the insulating material of single or multiple lift structure.In more detail, contact hole V5 is arranged in insulation course 20, and between the 4th branching portion 102c of the auxiliary electrode pattern 102 of bridging structure 120 and dot structure group U1.Contact hole V6 is arranged in insulation course 20, and between the 3rd branching portion 202b of the auxiliary electrode pattern 202 of bridging structure 120 and dot structure group U2.
Similarly, the first pixel electrode P1 of the dot structure group U1 of present embodiment and the second pixel electrode P2 are overlapping with the part of the connecting portion 102a of auxiliary electrode pattern 102 separately, to constitute the reservior capacitor of two dot structures among the dot structure group U1.The first pixel electrode P3 of dot structure group U2 and the second pixel electrode P4 are overlapping with the part of the connecting portion 202a of auxiliary electrode pattern 202 separately, to constitute the reservior capacitor of two dot structures among the dot structure group U2.Therefore, the pel array of present embodiment has high aperture opening ratio compared to the conventional pixel array.
In addition, present embodiment is design syndeton 130 between two adjacent dot structure group U1, U2 more, and this syndeton 130 can be stablized the voltage between the auxiliary electrode pattern 102,202.And because two dot structures in the dot structure group are shared auxiliary electrode pattern bottom electrodes as its reservior capacitor, therefore can between per two groups of dot structure groups (i.e. four dot structures), a syndeton 130 be set and get final product.In other words, in the present embodiment, the usage quantity of the syndeton 130 in pel array can also reduce, thereby helps increasing the aperture opening ratio of pel array equally.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (20)
1. a pel array is characterized in that, comprises a plurality of dot structure groups, and each dot structure group comprises:
One first sweep trace and one second sweep trace are set in parallel on the substrate;
One data line, itself and this first sweep trace and the not parallel setting of this second sweep trace;
One first active member, itself and this first sweep trace and this data line electrically connect;
One second active member, itself and this second sweep trace and this data line electrically connect;
One first pixel electrode, itself and this first active member electrically connects;
One second pixel electrode, itself and this second active member electrically connects, and wherein this first pixel electrode and this second pixel electrode have a space in abutting connection with part;
One auxiliary electrode pattern, it comprises a junction, one first branching portion, one second branching portion, one the 3rd branching portion and one the 4th branching portion; This connecting portion is arranged on the below in this space between this first pixel electrode and this second pixel electrode, and overlapping with this first pixel electrode of part and this second pixel electrode of part; This first branching portion is connected with this connecting portion and is overlapping with this first pixel electrode of part; This second branching portion is connected with this connecting portion and is overlapping with this second pixel electrode of part; The 3rd branching portion is connected with this connecting portion and is overlapping with this first pixel electrode of part; And the 4th branching portion be connected with this connecting portion and with the part this second pixel electrode overlapping.
2. pel array according to claim 1 is characterized in that, more comprises a syndeton, and it electrically connects this auxiliary electrode pattern in the two adjacent dot structure groups.
3. pel array according to claim 2 is characterized in that, this syndeton comprises:
One bridging structure is arranged between the two auxiliary electrode patterns in the two adjacent dot structure groups;
One first contact hole is arranged on this bridging structure and wherein in the overlapping region between this auxiliary electrode pattern in the dot structure group; And
One second contact hole is arranged in the overlapping region between this auxiliary electrode pattern in this bridging structure and this another dot structure group.
4. pel array according to claim 3 is characterized in that:
This first contact hole is at this bridging structure and wherein between the 3rd branching portion of this auxiliary electrode pattern in the dot structure group; And
Between the 4th branching portion of this auxiliary electrode pattern of this second contact hole in this bridging structure and another dot structure group.
5. pel array according to claim 1 is characterized in that, parallel this data line of this first branching portion of this auxiliary electrode pattern, this second branching portion, the 3rd branching portion and the 4th branching portion is provided with.
6. pel array according to claim 1 is characterized in that, parallel this first sweep trace of this connecting portion of this auxiliary electrode pattern and this second sweep trace setting.
7. pel array according to claim 1 is characterized in that, this auxiliary electrode pattern comprises the shading conductive material.
8. pel array according to claim 1, wherein those auxiliary electrode patterns in those dot structure groups are to be electrically connected to use voltage altogether.
9. pel array according to claim 1 is characterized in that, this auxiliary electrode pattern and this first sweep trace and this second sweep trace are to belong to same rete.
10. pel array according to claim 1 is characterized in that, the width of this connecting portion of this auxiliary electrode pattern is greater than the width of this first branching portion, this second branching portion, the 3rd branching portion and the 4th branching portion.
11. a pel array is characterized in that, comprises a plurality of dot structure groups, each dot structure group comprises:
One first sweep trace and one second sweep trace are set in parallel on the substrate;
One data line, itself and this first sweep trace and the not parallel setting of this second sweep trace;
One first active member, itself and this first sweep trace and this data line electrically connect;
One second active member, itself and this second sweep trace and this data line electrically connect;
One first pixel electrode, itself and this first active member electrically connects;
One second pixel electrode, itself and this second active member electrically connects;
One auxiliary electrode pattern, it comprises a junction, one first branching portion, one second branching portion, one the 3rd branching portion and one the 4th branching portion; This connecting portion is arranged on the below in this space between this first pixel electrode and this second pixel electrode; This first branching portion is connected with this connecting portion and is vertical with this connecting portion; This second branching portion is connected with this connecting portion and is vertical with this connecting portion; The 3rd branching portion its be connected with this connecting portion and with the part this first pixel electrode overlapping; And the 4th branching portion be connected with this connecting portion and overlapping with this second pixel electrode of part, wherein this connecting portion, this first branching portion, this second branching portion, the 3rd branching portion and the 4th branching portion constitute H shape.
12. pel array according to claim 11 is characterized in that, this first pixel electrode and this second pixel electrode are all between this first sweep trace and this second sweep trace.
13. pel array according to claim 11 is characterized in that, more comprises a syndeton, it electrically connects the auxiliary electrode pattern in the two adjacent dot structure groups.
14. pel array according to claim 13 is characterized in that, this syndeton comprises:
One bridging structure is arranged between the auxiliary electrode pattern in the two adjacent dot structure groups;
One first contact hole is arranged on this bridging structure and wherein in the overlapping region between this auxiliary electrode pattern in the dot structure group; And
One second contact hole is arranged in the overlapping region between this auxiliary electrode pattern in this bridging structure and this another dot structure group.
15. pel array according to claim 14 is characterized in that:
This first contact hole is at this bridging structure and wherein between the 3rd branching portion of this auxiliary electrode pattern in the dot structure group; And
Between the 4th branching portion of this auxiliary electrode pattern of this second contact hole in this bridging structure and another dot structure group.
16. pel array according to claim 11 is characterized in that, parallel this data line of this first branching portion of this auxiliary electrode pattern, this second branching portion, the 3rd branching portion and the 4th branching portion is provided with.
17. pel array according to claim 11 is characterized in that, this auxiliary electrode pattern comprises the shading conductive material.
18. pel array according to claim 11, wherein those auxiliary electrode patterns in those dot structure groups are to be electrically connected to use voltage altogether.
19. pel array according to claim 11 is characterized in that, this auxiliary electrode pattern and this first sweep trace and this second sweep trace are to belong to same rete.
20. pel array according to claim 11 is characterized in that, the width of this connecting portion of this auxiliary electrode pattern is greater than the width of this first branching portion, this second branching portion, the 3rd branching portion and the 4th branching portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010507440 CN102033378A (en) | 2010-09-27 | 2010-09-27 | Pixel array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010507440 CN102033378A (en) | 2010-09-27 | 2010-09-27 | Pixel array |
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| CN102033378A true CN102033378A (en) | 2011-04-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104636738A (en) * | 2015-01-21 | 2015-05-20 | 友达光电股份有限公司 | Sensing device |
| CN109240011A (en) * | 2018-11-16 | 2019-01-18 | 成都中电熊猫显示科技有限公司 | array substrate and liquid crystal display panel |
| CN110134289A (en) * | 2018-12-11 | 2019-08-16 | 友达光电股份有限公司 | Image element array substrates and its driving method |
| CN114371579A (en) * | 2021-12-30 | 2022-04-19 | 长沙惠科光电有限公司 | Array substrate and display panel |
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| US6040882A (en) * | 1996-10-16 | 2000-03-21 | Hyundai Electronics Industries Co., Ltd. | Liquid crystal display device having "H" character common electrode and method of fabricating thereof |
| US20080043161A1 (en) * | 2006-08-18 | 2008-02-21 | Chunghwa Picture Tubes, Ltd | Thin film transistor array substrate and liquid crystal display devices |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040882A (en) * | 1996-10-16 | 2000-03-21 | Hyundai Electronics Industries Co., Ltd. | Liquid crystal display device having "H" character common electrode and method of fabricating thereof |
| US20080043161A1 (en) * | 2006-08-18 | 2008-02-21 | Chunghwa Picture Tubes, Ltd | Thin film transistor array substrate and liquid crystal display devices |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104636738A (en) * | 2015-01-21 | 2015-05-20 | 友达光电股份有限公司 | Sensing device |
| CN104636738B (en) * | 2015-01-21 | 2017-11-14 | 友达光电股份有限公司 | Sensing device |
| CN109240011A (en) * | 2018-11-16 | 2019-01-18 | 成都中电熊猫显示科技有限公司 | array substrate and liquid crystal display panel |
| CN109240011B (en) * | 2018-11-16 | 2019-08-13 | 成都中电熊猫显示科技有限公司 | Array substrate and liquid crystal display panel |
| CN110134289A (en) * | 2018-12-11 | 2019-08-16 | 友达光电股份有限公司 | Image element array substrates and its driving method |
| CN114371579A (en) * | 2021-12-30 | 2022-04-19 | 长沙惠科光电有限公司 | Array substrate and display panel |
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Application publication date: 20110427 |