CN102024736A - Mounting table structure and processing apparatus - Google Patents
Mounting table structure and processing apparatus Download PDFInfo
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- CN102024736A CN102024736A CN2010102867516A CN201010286751A CN102024736A CN 102024736 A CN102024736 A CN 102024736A CN 2010102867516 A CN2010102867516 A CN 2010102867516A CN 201010286751 A CN201010286751 A CN 201010286751A CN 102024736 A CN102024736 A CN 102024736A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a mounting table structure and a processing apparatus, which are capable of improving the durability of the heat dispersion plate of a directly-mounted body to be processed, which makes the body to be processed hard to be broken and a connecting terminal not to corrode. The mounting table structure is disposed in a treatment container (32) capable of air exhaust, and is used for mounting a body to be processed (W). The mounting table structure comprises a mounting table body (74) provided with a heating mechanism (72) used for heating the body to be processed, a heat dispersion plate (76) disposed on the mounting table body with the body to be processed being mounted on the upper surface of the heat dispersion plate, an electrode (78) disposed in the mounting table body, a cylindrical support (70) which stands up from the bottom of the treatment container and is used for supporting the mounting table body, a heater power supply component (110A-110) which is inserted in the support with the upper end part being connected to the heating mechanism, and an electrode power supply component (112) which is inserted in the support with the upper end part being connected to the electrode.
Description
Technical field
The present invention relates to the processing unit and the mounting base structure of the handled object of semiconductor wafer etc.
Background technology
General in the manufacture process of semiconductor integrated circuit, need implement various monolithics such as film forming processing, etch processes, heat treatment, upgrading processings, crystallization processing repeatedly to the handled object of semiconductor wafer etc. and handle, to form the integrated circuit of expecting.When carrying out above-mentioned various processing, kind according to its processing imports to necessary processing gas in the container handling respectively, for example carrying out importing to film forming gas and halogen gas in the container handling respectively when film forming is handled, ozone gas etc. is imported to respectively in the container handling when handling carrying out upgrading, carry out crystallization when handling with N
2Inertness gas and O such as gas
2Gas etc. import in the container handling respectively.
With the one chip processing unit that semiconductor wafer is heat-treated one by one is that example describes, in the container handling that can vacuumize, be provided with the mounting table that for example is built-in with resistance heater, surperficial thereon mounting semiconductor wafer, under temperature (for example 100 ℃～1000 ℃) heated state, flow into predetermined process gas, use plasma or do not use plasma and under the process conditions of regulation, semiconductor wafer is implemented various heat treatments (patent documentation 1～4) with regulation.Therefore, for the parts in the container handling, handle also not corrodible corrosion resistance in the gas even if require them to have the thermal endurance that they are heated and be exposed to.
Yet, in the processing unit that uses the processed wafer of plasma treatment, mounting base structure about the mounting semiconductor wafer, generally make it have the thermal endurance corrosion resistance and from preventing the necessity of metallic pollutions such as metal contamination, for example in ceramic materials such as AlN, imbed as the resistance heater of heater at high temperature one fire and make the mounting table main body and thereon the surface the hot dispersion plate of imbedding the motor that is used to form lower electrode etc. is set and forms mounting table.In addition, same firing ceramics material etc. forms pillar in other operation, for example utilizes thermal diffusion in conjunction with above-mentioned mounting table side and above-mentioned pillar are welded together and the integrated mounting table structure of making.This integrally formed mounting table structure erects the bottom that is arranged in the container handling.In addition, also can replace above-mentioned ceramic material sometimes but with having the heat-and corrosion-resistant flexible few quartz glass of heat in addition.
Herein, an example to existing mounting base structure describes.Fig. 6 is the sectional view of an example of existing mounting base structure.This mounting base structure is set at and can carries out in the container handling of vacuum exhaust, and as shown in Figure 6, this mounting base structure has discoideus mounting table 2.Particularly, above-mentioned mounting table 2 comprises: the mounting table main body 8 of for example imbedding the formation such as for example quartz or ceramic material etc. of heater blocks 6 such as having heaters; With the thin hot dispersion plate 12 that for example is made of ceramic material of imbedding electrode 10 in inside, the mounting semiconductor wafer W is to heat semiconductor wafer W on this hot dispersion plate 12.Central portion below this mounting table 2 for example utilizes thermal diffusion to engage and engages and the identical pillar cylindraceous 4 that for example is made of ceramic materials such as AlN is arranged and integrated.
Therefore, both utilize thermal diffusion junction surface 5 and engage airtightly.Wherein, also use bolt that mounting table 2 and pillar 4 are attached at sometimes.Herein, for the size of above-mentioned mounting table 2, for example when the size of semiconductor wafer during at 300mm, diameter is about 350mm.
The bottom of above-mentioned pillar 4 utilizes fixed block 15 and is fixed on container bottom 14, becomes the state of erecting thus.In above-mentioned pillar 4 cylindraceous, be provided with its upper end and be connected heating installation power supply parts 20 on the above-mentioned heating arrangements 6 via splicing ear 16, the bottom side of these heating installation power supply parts 20 connects container bottom downwards via insulating element 22 and protruding.In addition, above-mentioned electrode 10 is connected on the electrode power supply parts 26 via splicing ear 24, and these electrode power supply parts 26 are inserted and led in pillar 4, and its bottom connects insulating element 22 downwards and stretches out to the outside.
Then, in above-mentioned pillar 4, supply with for example N as inertness gas
2Gas.Thus, can prevent to handle gas etc. and invade situation in this pillar 4, prevent to corrode the situation of above-mentioned each power supply part 20,26 and splicing ear 16,24 etc. because of above-mentioned corrosive process gases.Wherein, can apply the direct voltage of checking usefulness and the High frequency power that bias voltage is used to above-mentioned electrode 10 as required.
[patent documentation 1]: Japanese kokai publication hei 07-078766 communique
[patent documentation 1]: TOHKEMY 2004-356624 communique
[patent documentation 1]: TOHKEMY 2006-295138 communique
[patent documentation 1]: TOHKEMY 2007-204855 communique
Yet, in above-mentioned existing mounting base structure, because be is being to imbed in the hot dispersion plate 12 that constitutes of the extremely thin ceramic material about 5mm as the metal electrode 10 of foreign matter and one is fired and formed by thickness, so being easy to produce because of thermal expansion difference etc., both cause that hot dispersion plate 12 itself takes place damaged, in addition, this manufacturing itself also becomes complicated and expensive.
In addition, in container handling, flow into the N of conduct inertness gas of supply in pillar 4 from the above-mentioned mounting table main body 8 and the gap, border 28 of the contact-making surface of hot dispersion plate 12
2Gas, but can not avoid the minorities such as processing gas in the container handling to invade gap, above-mentioned border 28, there is following problems in its result: the part in gap, above-mentioned border 28 is attached with unwanted film, and above-mentioned splicing ear 24 is corroded because of corrosive gas sometimes.
Summary of the invention
The present invention is conceived to the problems referred to above point, finishes in order to solve it effectively.The object of the present invention is to provide a kind of durability that can improve the hot dispersion plate of direct mounting handled object to make it be difficult to mounting base structure and processing unit that breakage and splicing ear can not be corroded.
First aspect present invention provides a kind of mounting base structure, this mounting base structure be set at can the container handling of exhaust in, be used for mounting handled object to be processed, this mounting base structure is characterised in that, comprise: the mounting table main body, this mounting table main body is provided with the heating arrangements that described handled object is heated; Hot dispersion plate, this hot dispersion plate is set on the described mounting table main body, and at the described handled object of upper surface mounting of this hot dispersion plate; Electrode, this electrode are set in the described mounting table main body; Cylinder-shaped pillar, this cylinder-shaped pillar erects from the bottom of described container handling, is used to support described mounting table main body; Heating installation power supply parts, these heating installation power supply parts are inserted and to be led in described pillar and the upper end is connected with described heating arrangements; With the electrode power supply parts, these electrode power supply parts are inserted and to be led in described pillar and the upper end is connected with described electrode.
Thus, be set at mounting base structure in can the container handling of exhaust, that be used for mounting handled object to be processed, because electrode is set in the mounting table main body that possesses heating arrangements, the hot dispersion plate of mounting handled object is set on this mounting table main body, therefore, the durability that can improve the hot dispersion plate of direct mounting handled object makes it be difficult to breakage, and can make splicing ear not perishable.
Second aspect present invention provides a kind of mounting base structure, this mounting base structure be set at can the container handling of exhaust in, be used for mounting handled object to be processed, this mounting base structure is characterised in that, comprise: the mounting table main body, this mounting table main body is provided with the heating arrangements that described handled object is heated; Hot dispersion plate, this hot dispersion plate is set on the described mounting table main body, and at the described handled object of upper surface mounting of this hot dispersion plate; Electrode, this electrode are set in the described mounting table main body; A plurality of protection tubes, described a plurality of protection tubes erect from the bottom side of described container handling, are used to support described mounting table main body; Heating installation power supply parts, these heating installation power supply parts are inserted and to be led in described protection tube and the upper end is connected with described heating arrangements; With the electrode power supply parts, these electrode power supply parts are inserted and to be led in described protection tube and the upper end is connected with described electrode.
Third aspect present invention provides a kind of processing unit, is used for handled object implement is handled, and this processing unit is characterised in that, comprising: container handling that can exhaust; Be used for the described handled object of mounting as each described mounting base structure of claim 1～9; Gas supply mechanism with supply gas in described container handling.
According to mounting base structure involved in the present invention and processing unit, can bring into play following good action effect
Be set at mounting base structure in can the container handling of exhaust, that be used for mounting handled object to be processed, because electrode is set in the mounting table main body that possesses heating arrangements, the hot dispersion plate of mounting handled object is set on this mounting table main body, therefore, the durability that can improve the hot dispersion plate of direct mounting handled object makes it be difficult to breakage, and can make splicing ear not perishable.
Description of drawings
Fig. 1 is the section constitution figure of processing unit that expression has first embodiment of mounting base structure involved in the present invention.
Fig. 2 is the amplification sectional view of first embodiment of expression mounting base structure.
Fig. 3 is the plane graph of the configuration status of modal representation heating arrangements.
Fig. 4 is the amplification sectional view of the pillar of expression mounting base structure.
Fig. 5 is the amplification sectional view of second embodiment of expression mounting base structure involved in the present invention.
Fig. 6 is the sectional view of an example of the mounting base structure of expression prior art.
Label declaration
30: processing unit
32: container handling
34: spray head (gas supply mechanism)
58: gas extraction system
66: mounting base structure
68: mounting table
70: pillar
72: heating arrangements
74: the mounting table main body
76: hot dispersion plate
78: electrode
80: heater line
110,110A～110D: heating installation power supply parts
111: feeder rod used therein
112: the electrode power supply parts
116: protection tube
124: feeder rod used therein
138: protection tube
142,144: intercommunicating pore
200: the inertness gas supply mechanism
202: inertness gas imports path
218: the electrostatic chuck DC power supply
220: the bias voltage high frequency electric source
W: semiconductor wafer (handled object)
Embodiment
Below, be elaborated with reference to the preferred implementation of accompanying drawing to mounting base structure involved in the present invention and processing unit.
＜the first embodiment 〉
Fig. 1 is the section constitution figure of processing unit that expression has first embodiment of mounting base structure involved in the present invention, Fig. 2 is the amplification sectional view of first embodiment of expression mounting base structure, Fig. 3 is the plane graph of the configuration status of modal representation heating arrangements, and Fig. 4 is the amplification sectional view of the pillar of expression mounting base structure.Herein, describe as example with the situation of using plasma to carry out the film forming processing.
As shown in the figure, this processing unit 30 has the container handling 32 of aluminum (comprising aluminium alloy), and for example the inside in cross section forms the circular shape.Top in this container handling 32 is provided with via insulating barrier 36 and is used to import for example spray head 34 as gas supply mechanism of film forming gas, and forming can be from a plurality of gas jetting hole 40A, 40B on the setting gas blowing face 38 in its lower section to handling space S inject process gas.This spray head 34 is also used as upper electrode when plasma treatment.
In this spray head 34, be formed with two the 42A of gas diffusion chamber, the 42B of being divided into of hollow form, import to herein processing gas after in-plane diffusion, from each gas jetting hole 40A, 40B injection that is communicated with each 42A of gas diffusion chamber, 42B respectively.That is, gas jetting hole 40A, 40B are configured to rectangular.All for example forming of this spray head 34 by nickel, HASTELLOY nickel alloy, aluminium or aluminium alloys such as (registered trade mark (Ha ス テ ロ イ)).Wherein, as spray head 34, according to employed gaseous species, also there is situation about being divided into more than or three sometimes in its gas diffusion chamber.
At the junction surface of this spray head 34 with the insulating barrier 36 of the upper end open portion of container handling 32, insert and for example be provided with the seal member 44 that constitutes by O type ring etc., make it possible to keep the air-tightness in the container handling 32.This spray head 34 is connected with the high frequency electric source 48 that the plasma of 13.56MHz is for example used via match circuit 46, can generate plasma where necessary.Wherein, this frequency there is no need to be limited at above-mentioned 13.56MHz.
In addition, be provided with at the sidewall of container handling 32 and take out of mouthfuls 50 to move into moving into of taking out of as the semiconductor wafer W of handled object in being used for respect to this container handling 32, and move at this and to take out of mouthfuls 50 be provided with can the airtight family of power and influence who opens and closes 52 (air seal).
Sidepiece in the bottom 54 of this container handling 32 is provided with exhaust outlet 56.This exhaust outlet 56 is connected with the gas extraction system 58 that for example is used to vacuumize that is used for carrying out exhaust in the container handling 32.This gas extraction system 58 has the exhaust channel 60 that is connected with above-mentioned exhaust outlet 56, assigns successively to be provided with pressure-regulating valve 62 and vacuum pump 64 on this exhaust channel 60, thereby container handling 32 can be maintained the pressure of expectation.Wherein, according to the difference of processing mode, also the pressure in the container handling 32 are set near the pressure the atmospheric pressure sometimes.
Above-mentioned mounting table 68 is provided with the mounting table main body 74 that is used for heating arrangements 72 that the semiconductor wafer W as handled object is heated by inside and the thin hot dispersion plate 76 of upper surface that is arranged on this mounting table main body 74 and the above-mentioned semiconductor wafer W of its upper surface mounting is constituted.In this mounting table main body 74, be provided with electrode 78.
Particularly, above-mentioned mounting table main body 74 its integral body are made of discoideus dielectric quartzy, the ceramic material uniform thickness, imbed in this mounting table main body 74 and are provided with above-mentioned heating arrangements 72 and electrode 78, and above-mentioned electrode 78 is positioned at the top of heating arrangements 72.This heating arrangements 72 has the heater line 80 that the roughly whole face that spreads all over mounting table main body 74 sets, and heater line 80 as shown in Figure 3 a plurality of is constituted by two interior all heater line 80A and periphery heater line 80B herein by being divided into concentric circles.The starting point of above-mentioned each heater line 80A, 80B and terminal point all concentrate on the central portion of mounting table main body 74, as described later, form and can carry out temperature control to each heater line 80A, 80B independently.
Thus, form interior all heating region 82A and periphery heating region 82B.Use carbon line as this heater line 80, but it is not limited to carbon line, it can use any material that is selected from carbon line, tungsten line, the molybdenum wire.
In addition, the electrode 78 that is configured in the top of above-mentioned heater line 80 is provided with in roughly whole the mode that spreads all over mounting table main body 74, and constitute by the conductor lines 84 that for example forms mesh-like (mesh, mesh),, for example can use carbon etc. as this conductor lines 84.This electrode 78 is also used as and carries out chuck that the static card ends with electrode be used for applying to the plasma that produces the bias voltage electrode of high-frequency bias voltage, and it constitutes lower electrode.
Formation for above-mentioned mounting table main body 74, can form in the following manner, this mounting table main body 74 is split into for example three discoideus dividing bodies of upper, middle and lower, between each dividing body of upper, middle and lower, insert respectively and be provided with above-mentioned heater line 80 and conductor lines 84, utilize thermal diffusion etc. to make each dividing body welding be one.As this mounting table main body 74, can use ceramic material, quartz, aluminium metals such as (comprising aluminium alloy) such as aluminium nitride.
Discoideus hot dispersion plate 76 as being arranged on this mounting table main body 74 can use opaque dielectric, and its thickness is extremely thin, for example is about 5～10mm.As this dielectric, for example can use aluminium nitride (AlN), contain the opaque quartz of a plurality of bubbles etc.In this hot dispersion plate 76, because different with the mounting table structure of prior art, it does not contain foreign matters such as electrode, therefore can improve its durability.
In addition, above-mentioned mounting table main body 74 and hot dispersion plate 76 can by identical materials for example aluminium nitride, quartz constitute, make its hot stroke identical thus, therefore,, also can be suppressed at it and produce bigger load between the two even if taken place hot flexiblely.In addition, the following and side of this mounting table main body 74 is covered (with reference to Fig. 2) by stable on heating cover 86.This cover 86 is formed by ceramic materials such as aluminium nitride.
In addition, above-mentioned pillar 70 forms the cylinder shape by ceramic materials such as aluminium nitride, quartz herein, its upper end is bonded on the central portion of the lower surface of above-mentioned mounting table main body 74 airtightly by thermal diffusion joint or thermal welding etc., for example be formed with thermal bonding portion 88 (with reference to Fig. 2) at this.Wherein, also can utilize screw to substitute above-mentioned thermal welding etc. links together mounting table main body 74 and pillar 70.
In addition, connect its above-below direction in above-mentioned mounting table 68 and be formed with a plurality of for example three pin inserting holes 90 (only illustrating in Fig. 1 and Fig. 2), these three pin inserting holes 90 are configured on the same circumference with the angle intervals of 120 degree as shown in Figure 3.Above-mentioned respectively sell to dispose in the inserting hole 90 with free chimeric (the free cooperation) (space chimeric (space cooperations), trip embedding) state can insert the lifting pin 92 that leads to up or down.Lower end at this lifting pin 92 disposes the enhancing ring 94 that the circular-arc pottery by for example being similar to aluminium oxide is made, and the lower end lodge of above-mentioned each lifting pin 92 is on this enhancing ring 94.The set moving rod in the arm 96 that prolongs from this enhancing ring 94 and the bottom that connects container handling 32 54 (bar that haunts, stretch out and return bar) 98 is connected, and this moving rod 98 can carry out lifting by actuator 100.
Thus, above-mentioned each promote pin 92 and form when carrying out the handing-over of semiconductor wafer W can haunt upward from each upper end of selling inserting hole 90 (advance and retreat).In addition, be provided with the bellows 102 that can stretch at the breakthrough part in the bottom 54 of container handling 32 of above-mentioned moving rod 98, above-mentioned moving rod 98 form can be in keeping container handling 32 bubble-tightly carry out lifting simultaneously.
Herein, as shown in Figure 2, above-mentioned pin inserting hole 90 is to be formed by the through hole 106 that forms along its length direction on as the bolt 104 of the connecting piece that links above-mentioned mounting table main body 74 and above-mentioned hot dispersion plate 76 and cover 86.Particularly, on above-mentioned mounting table main body 74, hot dispersion plate 76 and cover 86, be formed with the bolt hole (scheming not shown) that above-mentioned bolt 104 passes through, at the logical bolt 104 that is formed with above-mentioned through hole 106 of this bolt hole interpolation, fastening by utilizing nut 108 that it is carried out, and above-mentioned mounting table main body 74 and hot dispersion plate 76 and cover 86 are combined as a whole.
Wherein, 86 need of cover are provided with it as required and get final product, and also it can be omitted.These bolts 104 and nut 108 are for example by ceramic materials such as aluminium nitride, aluminium oxide or bring the less metal material of metallic pollution for example nickel, nickel alloy etc. form.At this moment, the contact-making surface generation at above-mentioned mounting table main body 74 and hot dispersion plate 76 has small gap, border 109.
Form elongated heating installation power supply parts 110 logical being provided with of above-mentioned pillar 70 interpolations, the upper end of these heating installation power supply parts 110 is connected with above-mentioned heating arrangements 72.In addition, form elongated electrode power supply parts 112 logical being provided with of above-mentioned pillar 70 interpolations, the upper end of these electrode power supply parts 112 is connected with above-mentioned electrode 78.
Particularly, above-mentioned heating installation power supply parts 110 have for example feeder rod used therein 111 of carbon system, for example form rectangular bar-shapedly, the upper end of each feeder rod used therein 111 is connected with the two ends of interior all heater line 80A of above-mentioned heating arrangements 72 and the two ends of periphery heater line 80B respectively.In Fig. 3 and Fig. 4, express two heating installation power supply parts 110A, the 110B at the two ends that are connected above-mentioned interior all heater line 80A, and express two heating installation power supply parts 110C, the 110D at the two ends that are connected periphery heater line 80B, in Fig. 1, only express heating installation power supply parts 110 as representative.The structure of all heating installation power supply parts 110A～110D is identical with installment state.When carrying out above-mentioned connection, the starting point of all heater line 80A and periphery heater line 80B and terminal point form connecting hole 114 (with reference to Fig. 2) in above-mentioned below mounting table main body 74, insert the upper end of each feeder rod used therein 111 of heating installation power supply parts 110A～110D at this, wait by welding to connect.
Above-mentioned each heating installation power supply parts 110 (110A～110D) inserts respectively and leads in the independently elongated protection tube 116 that is made of dielectric, the upper end of this protection tube 116 by thermal welding, thermal diffusion etc. airtightly with the lower surface engages of above-mentioned mounting table main body 74.As above-mentioned dielectric, can use the ceramic material or the quartz of aluminium nitride etc.In addition, for example be connected with first metal bar 118 of the conductivity of the weak point that constitutes by molybdenum etc. in the bottom of this feeder rod used therein 111, above-mentioned protection tube 116 envelopes ended by the part of this first metal bar 118.In this protection tube 116, enclose rare gas, N that He etc. is arranged
2The inertness gas that constitutes, thus can prevent that for example the feeder rod used therein 111 of carbon system is corroded.Further be connected with the conductor wire 120 of the weak point that constitutes by twisted wire (stranded wire) in turn and wait second metal bar 122 of conductivity of the weak point of formation by molybdenum (molybdenum) to the below of above-mentioned first metal bar 118.
Above-mentioned electrode supply part 112 also has for example feeder rod used therein 124 of carbon system, form for example rectangular bar-shaped, the upper end of this feeder rod used therein 124 to be formed on mounting table main body 74 below connecting hole 126 in insert, it utilizes welding to wait via splicing ear 128 to be connected with above-mentioned electrode 78.Electrical first metal bar 132 of the short-range missile that is connected with first conductor wire 130 that constitutes by twisted wire in the bottom of this feeder rod used therein 124 in turn, constitutes by molybdenum etc., second conductor wire 134 that twisted wire constitutes is arranged and second metal bar 136 of the conductivity of the weak point that for example constitutes by molybdenum etc.
These electrode power supply parts 112 are inserted and are led in the protection tube 138 that is made of elongated dielectric, and the upper end of this protection tube 138 is bonded on the lower surface of above-mentioned mounting table main body 74 airtightly by thermal welding, thermal diffusion etc.As above-mentioned dielectric, can use ceramic material or quartz such as aluminium nitride.In addition, this protection tube 138 is sealed by the part of above-mentioned first metal bar 132 and ends.In this protection tube 138, enclose rare gas, N such as He is arranged
2The inertness gas that constitutes can prevent that thus for example the feeder rod used therein 124 of carbon system corrodes.
Herein, above-mentioned feeder rod used therein 111,124 is not limited to carbon, also can use nickel alloy, tungsten alloy, molybdenum alloy etc.In addition, above-mentioned pillar 70 interpolations be connected with the corresponding number of heating region number of above-mentioned heating arrangements 72 be two thermocouple 140A, 140B herein.The top of a thermocouple 140A in it is inserted and is led in the intercommunicating pore 142 that forms connecting mounting phosphor bodies 74, leading section as measuring junction contacts with the zone of interior all heating region 82A (with reference to Fig. 3) of hot dispersion plate 76, can measure the temperature of this part.
In addition, is communicated with in the intercommunicating pore 144 that another thermocouple forms along connecting mounting table main body 74 top of 140B and with this intercommunicating pore 144 along the radial direction of mounting table main body 74 and extends and dispose in the slot part 146 that forms, be installed in the zone of the periphery heating region 82B (with reference to Fig. 3) of hot dispersion plate 76 as the leading section of its measuring junction via attachment 148, can measure the temperature of this part.Above-mentioned each intercommunicating pore 142,144 by above-mentioned thermocouple 140A, 140B are inserted logical in, also have the function that gap, border 109 that the inertness gases that import in the pillar 70 described later are formed imports on the contact-making surface of mounting table main body 74 and hot dispersion plate 76.
In addition, the bottom 54 of container handling 32 for example is made of stainless steel, as depicted in figs. 1 and 2, portion is formed with conductor outlet 150 in the central, in the inboard of this conductor outlet 150, be mounted with airtightly via seal members 154 such as O type rings and form the circular mounting base 152 that for example constitutes by aluminium alloy etc.
Be equipped with in the bottom of above-mentioned pillar 70 by the flange part (flange portion) 160 that constitutes with pillar 70 same materials, this flange part 160 is set on the above-mentioned mounting base 152.Flange part 160 embeddings at this pillar 70 are equipped with the fixed part 162 that the cross section that for example is made of aluminium alloy is the ring-type of L font, and this fixed part 162 and above-mentioned mounting base 152 are fixed together by bolt 164, fix above-mentioned pillar 70 thus.At this moment, insert between mounting base 152 and flange part 160 and be provided with the seal member 165 that is made of O type ring etc., this part is kept airtightly.
In addition, be provided with the installation portion 166 of the ring-type that for example aluminium alloy that is integrally formed therewith makes in the bottom of above-mentioned mounting base 152.The internal diameter of the installation portion 166 of this ring-type is set to bigger a little than the internal diameter of above-mentioned mounting base 152, makes it possible to dispose in the gap that each power supply part 110A～110D, 112 sets more than the predetermined distance each other.Bottom at the installation portion 166 of this ring-type utilizes bolt 172 to be mounted with the sealed plate 168 that for example is made of aluminium alloy etc. airtightly via seal members 170 such as O type rings.Thus, make and become air seal (airtight) in the above-mentioned pillar cylindraceous 79.
Above-mentioned each heating installation power supply parts 110 (each second metal bar 122 (in Fig. 2, only expressing one) of 110A～10D) around the insulating sleeve (sleeve) 174 that constitutes by ceramic materials such as aluminium oxide of part utilization and be capped, the part of this insulating sleeve 174 connects above-mentioned sealed plate 168, airtightly with each heating installation power supply parts 110 (110A～110D) draw to the outside.Utilize bolt 180 to be mounted with the mounting panel 176 that for example constitutes airtightly at the breakthrough part of this insulating sleeve 174 via the seal member 178 of formations such as O type ring by aluminium alloy etc.
In addition, part around second metal bar 136 of above-mentioned electrode power supply parts 112 is same as described above to be capped by the insulating sleeve 182 that for example is made of ceramic materials such as aluminium oxide, the part of this insulating sleeve 182 connects above-mentioned sealed plate 168, airtightly to outside extraction electrode power supply part 112.Utilize bolt 188 to be mounted with the mounting panel 184 that for example constitutes airtightly at the breakthrough part of this insulating sleeve 182 via the seal member 186 of formations such as O type ring by aluminium alloy etc.And above-mentioned each thermocouple 140A, 140B connect above-mentioned sealed plate 168 airtightly and are drawn to the outside, utilize bolt 194 to be mounted with mounting panel 192 at this breakthrough part via the seal member 190 of formations such as O type ring.
Herein, an example of size is described at various piece, the diameter of mounting table 68 is about 340mm under the situation of corresponding 300mm (12 inches) semiconductor wafer, under the situation of corresponding 200mm (8 inches) semiconductor wafer is about 230mm, is about 460mm under the situation of corresponding 400mm (16 inches) semiconductor wafer.In addition, the diameter of each protection tube 116,138 is about 8～16mm, and the diameter of each feeder rod used therein 111,124 is about 4～6mm.
Below above-mentioned pillar 70, be provided with the inertness gas supply mechanism 200 of in above-mentioned pillar 70, supplying with inertness gas.Particularly, above-mentioned inertness gas supply mechanism 200 has the inertness gas that imports inertness gas in above-mentioned pillar 70 and imports path 202, as shown in Figure 1, this inertness gas import path 202 be disposed with such flow controller 204 of mass flow controller (mass flow controller) for example and supply gas midway the time become the open and close valve 206 of open mode, can be as required to as inertness gas N for example
2When carrying out flow control, gas supplies with.
Wherein, as inertness gas, use rare gas such as Ar, He to replace N
2Gas also can.As shown in Figure 2, import the part of path 202 as this inertness gas, the bottom 54 of above-mentioned container handling 32 and above-mentioned mounting base 152 for example utilizes bore a hole be formed with above-mentioned pillar 70 in the gas passage 208 that is communicated with.In addition, on the composition surface of above-mentioned bottom 54 and mounting base 152, be provided with the seal member 210 that for example constitutes to surround the mode of above-mentioned gas path 208, to insert, the feasible sealing of keeping this part by O type ring.
Herein, turn back to Fig. 1, with each heating installation power supply parts 110 of heating arrangements 72 (each distribution 212 (in Fig. 1, only illustrating) of 110A～110D) be connected, be connected with above-mentioned heater power source control part 214, come to make it possible to maintain desired temperatures according to the temperature of utilizing each thermocouple 140A, 140B (with reference to Fig. 2) to measure at the amount of power supply of each heating region 82A, 82B (with reference to Fig. 3) control to above-mentioned heating arrangements 72.
In addition, with distribution 216 that above-mentioned electrode power supply parts 112 are connected on be connected with the DC power supply 218 that electrostatic chuck uses respectively side by side and be used to apply the high frequency electric source 220 of the High frequency power that bias voltage uses, make it possible in the semiconductor wafer W of Electrostatic Absorption mounting table 68, the mounting table 68 that becomes lower electrode when handling applies the High frequency power as bias voltage.As the frequency of this High frequency power, can use 13.56MHz, but also can use 400kHz etc. in addition, to this frequency without any qualification.
The molar behavior of this processing unit 30 for example control, the mounting table 68 of processing pressure temperature control, handle gas supply, supply with the supply that stops, utilizing the inertness gas that inertness gas supply mechanism 200 carries out, supply with and stop etc., all undertaken by the apparatus control portion 222 that for example constitutes by computer etc.This apparatus control portion 222 has the storage medium 224 of the needed computer program of the above-mentioned action of storage.This storage medium 224 is by formations such as floppy disk, CD (Compact Disc), hard disk, flash memories.
Then, the action to the processing unit 30 of use plasma with said structure describes.At first, untreated semiconductor wafer W remains on the unshowned carrying arm of figure, via the family of power and influence 52 who becomes open mode, move into and take out of mouthfuls 50 and moved into and handle in the container 32, be handed off on the lifting pin (lifter pin) 92 of rising in this semiconductor wafer W after, this lifting pin 92 is descended, thus, semiconductor wafer W is positioned in the upper surface of the hot dispersion plate 76 of the mounting table 68 that the pillar 70 by mounting base structure 66 supported.At this moment, electrostatic chuck is played a role, semiconductor wafer W absorption is remained on the mounting table 68 by applying direct voltage from the electrode 78 of DC power supply 218 on the mounting table main body 74 that is arranged on mounting table 68.Wherein, also can use the clamp mechanism of the periphery of pushing semiconductor wafer W to substitute electrostatic chuck sometimes.
Then, various processing gases are carried out flow control respectively and supply with to spray head 34, this gas is injected and be directed to the processing space S from gas jetting hole 40A, 40B.The driving of the vacuum pump 64 by continuing gas extraction system 58 vacuumizes the atmosphere gases in the container handling 32, and then, the atmosphere gas that the valve opening of adjusting pressure-regulating valve 62 will be handled space S maintains predetermined process pressure.At this moment, the temperature of semiconductor wafer W is maintained at the predetermined process temperature.That is, make its heating by applying voltage to the heater line 80 of the heating arrangements 72 that constitutes mounting table 68 from heater line power control part 214.
Its result utilizes the heat that comes from heater line 80 that semiconductor wafer W is heated up and heats.At this moment, corresponding with heating region 82A, 82B and be respectively arranged with thermocouple 140A, 140B at hot dispersion plate 76, according to this measured value, heater power source control part 214 carries out temperature control by feeding back at the heater line 80A corresponding with each heating region 82A, 82B, 80B.Therefore, the temperature of semiconductor wafer W is carried out temperature control, can control for carrying out temperature under the very high state at the inner evenness of semiconductor wafer W all the time at each heating region 82A, 82B.At this moment, also relevant with the kind of operation, the temperature of mounting table 68 for example reaches about 700 ℃.
In addition, when carrying out plasma treatment, by driving high frequency electric source 48, between as the spray head 34 of upper electrode and mounting table 68, apply high frequency, produce plasma and carry out the regulation plasma treatment handling space S as lower electrode.In addition, apply High frequency power from bias voltage with the electrode 68 of high frequency electric source 220 on the mounting table main body 74 that is arranged on mounting table 68 this moment, can carry out the introducing of plasma ion thus.
Herein, the function to above-mentioned mounting base structure 66 is elaborated.At first, as mentioned above, respectively via two heating installation power supply parts 110A～110D at each heating region 82A, 82B each heater line 80A, 80B supply capability to heating arrangements 72.Based on the thermocouple 140A that is provided with according to each heating region 82A, 82B, the measured value of 140B, control supply capability by FEEDBACK CONTROL.And, apply the High frequency power that direct voltage that electrostatic chuck uses and bias voltage are used via electrode power supply parts 112 to electrode 78.
And, when the processing of semiconductor wafer, utilize inertness gas supply mechanism 200 to import path 202 imports the process flow control in pillar 70 for example N as inertness gas via inertness gas
2Gas purges (cleaning).The N that in this pillar 70, imports
2Gas rises in pillar 70, enter in the contact-making surface formed trickle border gap 109 (with reference to Fig. 2) of this mounting table main body 74 by the intercommunicating pore 142,144 that is arranged on the mounting table main body 74 with hot dispersion plate 76, because just little by little be released to the periphery of mounting table 68, so the corrosive gass such as processing gas, clean air that can prevent supply to container handling 32 in basically are via the situation of these gap, border 109 adverse currents to the pillar 70 from this gap, border 109.
Yet, because above-mentioned processing gas, clean air have very large extension, so though in gap, above-mentioned border 109, adverse current takes place sometimes by long-time use is small.At this moment, in existing mounting base structure, because electrode 10 is set in hot dispersion plate 12 (with reference to Fig. 6) side, so the splicing ear 24 of this hot dispersion plate 12 can be attached with unwanted film, splicing ear 24 can be corroded, but in mounting base structure 66 of the present invention, because electrode 78 is set at mounting table main body 74 sides, so prevent that unwanted film is attached to oneself needless to say can also prevent that this splicing ear 128 is corroded on this splicing ear 128.In addition, as mentioned above, because be not set to the electrode 78 of foreign matter on extremely thin hot dispersion plate 76, so should make relatively easily, and durability is improved, and therefore, also is difficult to breakage even if use repeatedly.
In addition, even if because in gap, above-mentioned border 109, handle gas and adverse current has taken place clean air, adverse current also can take place hardly to pillar 70, therefore, (situation of corrosion takes place in 110A～110D), electrode power supply parts 112 can to prevent to be configured in heating installation power supply parts 110 in this pillar 70.At this moment; even if the situation of adverse current to pillar 70 just in case taken place in above-mentioned processing gas, clean air; above-mentioned heating installation power supply parts 110 (also protected by airtight protection tube 116 by the feeder rod used therein 111 that is made of for example carbon of 110A～110D); in addition; the feeder rod used therein 124 that is made of for example carbon of above-mentioned electrode power supply parts 112 is also protected by airtight protection tube 138; therefore, can prevent reliably basically that these each feeder rod used thereins 111,112 from the situation of corrosion taking place.In addition, by protection tube 116,118 is set as mentioned above, can also prevent between power supply part, to take place paradoxical discharge.
Like this, according to the present invention, be arranged in can the container handling 32 of exhaust, be used for for example mounting base structure of semiconductor wafer W of mounting handled object to be processed, because in being provided with the mounting table main body 74 of heating arrangements 72, electrode 78 is set, the hot dispersion plate 76 of mounting handled object is set on this mounting table main body, make it be difficult to breakage so can improve the durability of the hot dispersion plate of direct mounting handled object, and splicing ear can not corroded.
＜the second embodiment 〉
Then, second embodiment to mounting base structure of the present invention describes.Among first embodiment that formerly illustrated, the pillar 70 bigger by diameter supports mounting table 68, but is not limited thereto, and also can replace above-mentioned pillar 70, utilizes the set less protection tube of a plurality of diameters to support mounting table 68.Fig. 5 is the amplification sectional view of second embodiment of expression mounting base structure of the present invention.Wherein, in Fig. 5, for same with reference to label and omit its explanation at the identical component part of Fig. 1～component part illustrated in fig. 4 mark.In addition, the content that in first embodiment, illustrates, except the formation of mounting base structure this different with second embodiment on the one hand, other all can be applicable to this second embodiment.
As shown in Figure 5; in this second embodiment; be not arranged on used pillar 70 among above-mentioned first embodiment, (110A～110D) inserts logical each protection tube 116, electrode power supply parts 112 and inserts the protection tube 138 that leads to and support mounting table 68 but utilize heating installation power supply parts 110.In addition, be provided with a new protection tube 250 that is made of dielectric in order to insert logical two thermocouple 140A, 140B herein, this protection tube 250 forms and supports above-mentioned mounting table 68.
Particularly, above-mentioned each protection tube 116,138,250 for example utilizes thermal welding to become one below above-mentioned mounting table main body 74 airtightly.Therefore, be formed with thermal welding junction surface 252 respectively in the upper end of each protection tube 116,138,250.
In addition, the inboard of the conductor outlet 150 that forms in the bottom 54 of container handling 32 for example is mounted with the tabular mounting base 152 that is made of stainless steel etc. airtightly via seal members 154 such as O type rings.
On this mounting base 152, be provided with the pipe fixed station 254 of fixing above-mentioned each protection tube 116,138,250.Aforementioned tube fixed station 254 is a same material with above-mentioned each protection tube 116,138,250, is promptly formed by quartz herein, forms through hole 256 accordingly with each protection tube 116,138,250.The bottom side of above-mentioned each protection tube 116,138,250 utilizes thermal welding etc. to be fastened on the upper surface side of aforementioned tube fixed station 254.Therefore, be formed with thermal welding portion 258 herein respectively.
At this moment, insert each protection tube 116 that is connected with each heating installation power supply parts 110A～110D and insert downwards in the through hole 256 that leads on being formed at aforementioned tube fixed station 254, its bottom is sealed ends, and N is enclosed in inside under decompression atmosphere environment
2, inertness gas such as Ar.
Like this, for example be provided with the fixed part 162 that is made of stainless steel etc. at the periphery of the pipe fixed station 254 of the bottom of fixing each protection tube 116,138,250 in the mode that surrounds them, this fixed part 162 utilizes bolt 64 to fix to mounting base 152 sides.
In addition, each through hole 256 at above-mentioned mounting base 152 corresponding aforementioned tube fixed stations 254 forms same through hole 260.Herein, (110A～110D) is made of first metal bar 118 of for example molybdenum system that above-below direction extends above-mentioned heating installation power supply parts 110, and in addition, first metal bar 132 that for example molybdenum of electrode power supply parts 112 constitutes also extends downwards.Above-mentioned metal bar 118,132 and thermocouple 140A, 140B lead to and extension downwards to above-mentioned each through hole 260 interpolation.On the composition surface of the upper surface of the lower surface of aforementioned tube fixed station 254 and mounting base 152, with surround above-mentioned each through hole 260 around mode be provided with the seal member 262 of O type ring etc., to improve the sealing of this part.
In addition, in the bottoms that above-mentioned electrode power supply parts 112 and two thermocouple 140A, 140B insert each logical through hole 260, utilize bolt 272,274 and be mounted with sealed plate (sealing plate) 268,270 via the seal member 264,266 that constitutes by O type ring etc. respectively.The metal bar 132 of above-mentioned electrode power supply parts 112 and thermocouple 140A, 140B connect above-mentioned sealed plate 268,270 airtightly and are provided with.These sealed plates 268,270 for example are made of stainless steel etc., and are corresponding with the breakthrough part with respect to the above-mentioned metal bar 132 of this sealed plate 268, are provided with insulating element 276 around metal bar 132.
In addition, bottom 54 at above-mentioned mounting base 152 and connected container handling 32, be formed with and insert with the metal bar 132 of above-mentioned electrode power supply parts 112 that logical inserting holes 260 and thermocouple 140A, 140B insert that logical through hole 260 is communicated with and, can supply with N as the gas passage 208 of the part of inertness gas supply mechanism 200
2Deng inertness gas.
For the situation of second embodiment of such formation, can bring into play the action effect identical with the first previous embodiment.Because in above-mentioned protection tube 116, enclose inertness gas arranged; supply with inertness gases in this export-oriented other protection tube 138,250, so also can prevent that (110A～110D), electrode power supply parts 112 and thermocouple 140A, 140B corrode each heating installation power supply parts 110 this moment.In addition, the volume in each protection tube 138,250 is compared very little with the volume in the pillar 70 of first embodiment, so this part can also reduce the N as inertness gas
2The use amount of gas.
Wherein, in the above-described embodiments, each heating region heating installation power supply parts 110A～110D separately independently is set respectively, but, when being divided into a plurality of heating regions interval in the thermal treatment zone, as earthy heating installation power supply parts and in the heating installation power supply parts of shared each heating interval is also passable.
In addition, in the present embodiment, be illustrated as example with the processing unit that uses plasma to carry out the film forming processing, but be not limited thereto, use whole processing unit of mounting base structure involved in the present invention for example to use the utilize film formation device that plasma CVD handles, the Etaching device that uses plasma etc. of plasma also can be suitable for.
And, being not limited to spray head 34 as gas supply mechanism, for example also can utilize to constitute gas supply mechanism to the logical gas nozzle of container handling 32 interpolations.In addition, be that example is illustrated with the semiconductor wafer as handled object herein, but be not limited thereto that glass substrate, LCD substrate, ceramic substrate etc. also can be applicable to the present invention.
Claims (10)
1. mounting base structure, this mounting base structure be set at can the container handling of exhaust in, be used for mounting handled object to be processed, this mounting base structure is characterised in that, comprising:
The mounting table main body, this mounting table main body is provided with the heating arrangements that described handled object is heated;
Hot dispersion plate, this hot dispersion plate is set on the described mounting table main body, and at the described handled object of upper surface mounting of this hot dispersion plate;
Electrode, this electrode are set in the described mounting table main body;
Cylinder-shaped pillar, this cylinder-shaped pillar erects from the bottom of described container handling, is used to support described mounting table main body;
Heating installation power supply parts, these heating installation power supply parts are inserted and to be led in described pillar and the upper end is connected with described heating arrangements; With
Electrode power supply parts, these electrode power supply parts are inserted and to be led in described pillar and the upper end is connected with described electrode.
2. mounting base structure as claimed in claim 1 is characterized in that:
In described pillar, be provided with the inertness gas supply mechanism of supplying with inertness gas.
3. mounting base structure as claimed in claim 2 is characterized in that:
Be formed with the intercommunicating pore that is used for supplying with described inertness gas to the space, border of the contact-making surface of described mounting table main body and described hot dispersion plate in described mounting table main body.
4. as each described mounting base structure in the claim 1～3, it is characterized in that:
Described heating installation power supply parts are inserted under sealing state and are led in the protection tube that is made of dielectric.
5. as each described mounting base structure in the claim 1～3, it is characterized in that:
Described electrode power supply parts are inserted under sealing state and are led in the protection tube that is made of dielectric.
6. mounting base structure, this mounting base structure be set at can the container handling of exhaust in, be used for mounting handled object to be processed, this mounting base structure is characterised in that, comprising:
The mounting table main body, this mounting table main body is provided with the heating arrangements that described handled object is heated;
Hot dispersion plate, this hot dispersion plate is set on the described mounting table main body, and at the described handled object of upper surface mounting of this hot dispersion plate;
Electrode, this electrode are set in the described mounting table main body;
A plurality of protection tubes, described a plurality of protection tubes erect from the bottom side of described container handling, are used to support described mounting table main body;
Heating installation power supply parts, these heating installation power supply parts are inserted and to be led in described protection tube and the upper end is connected with described heating arrangements; With
Electrode power supply parts, these electrode power supply parts are inserted and to be led in described protection tube and the upper end is connected with described electrode.
7. mounting base structure as claimed in claim 6 is characterized in that:
Be formed with the intercommunicating pore that is used for supplying with described inertness gas to the space, border of the contact-making surface of described mounting table main body and described hot dispersion plate in described mounting table main body.
8. as claim 6 or 7 described mounting base structures, it is characterized in that:
Described heating installation power supply parts are inserted under sealing state and are led in the protection tube that is made of dielectric.
9. as claim 6 or 7 described mounting base structures, it is characterized in that, also comprise:
Described electrode power supply parts are inserted under sealing state and are led in the protection tube that is made of dielectric.
10. a processing unit is used for handled object is implemented to handle, and this processing unit is characterised in that, comprising:
Container handling that can exhaust;
Be used for the described handled object of mounting as claim 1～3,6,7 each described mounting base structures; With
The gas supply mechanism of supply gas in described container handling.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009209689A JP2011061040A (en) | 2009-09-10 | 2009-09-10 | Stage structure and processing apparatus |
| JP2009-209689 | 2009-09-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102024736A true CN102024736A (en) | 2011-04-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102867516A Pending CN102024736A (en) | 2009-09-10 | 2010-09-10 | Mounting table structure and processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2011061040A (en) |
| KR (1) | KR20110027621A (en) |
| CN (1) | CN102024736A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103681185A (en) * | 2012-08-30 | 2014-03-26 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and plasma treatment device |
| CN109564870A (en) * | 2016-08-04 | 2019-04-02 | 日本新工芯技株式会社 | Electrode plate |
| CN110767596A (en) * | 2014-03-27 | 2020-02-07 | Toto株式会社 | Electrostatic chuck |
| CN111446145A (en) * | 2015-05-19 | 2020-07-24 | 应用材料公司 | Electrostatic puck assembly with metal bonded back plate for high temperature processing |
| CN113178375A (en) * | 2017-08-09 | 2021-07-27 | 东京毅力科创株式会社 | Mounting table and plasma processing apparatus |
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| US9398642B2 (en) | 2012-10-22 | 2016-07-19 | Thales Canada Inc | Removable heater for communication antenna |
| JP6530333B2 (en) * | 2016-02-29 | 2019-06-12 | 日本特殊陶業株式会社 | Heating member and electrostatic chuck |
| JP6886128B2 (en) * | 2016-11-29 | 2021-06-16 | 住友電気工業株式会社 | Wafer holder |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| WO2019036525A2 (en) * | 2017-08-14 | 2019-02-21 | Component Re-Engineering Company, Inc. | Method for joining quartz pieces and quartz electrodes and other devices of joined quartz |
| CN111670491A (en) * | 2018-01-31 | 2020-09-15 | 朗姆研究公司 | Electrostatic chuck (ESC) pedestal voltage isolation |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| JP7083262B2 (en) * | 2018-03-26 | 2022-06-10 | 日本特殊陶業株式会社 | Heating device |
| WO2021111771A1 (en) * | 2019-12-04 | 2021-06-10 | 日本碍子株式会社 | Ceramic heater |
| JP7146108B2 (en) * | 2020-01-15 | 2022-10-03 | 日本特殊陶業株式会社 | holding device |
| JP7430617B2 (en) * | 2020-10-16 | 2024-02-13 | 日本碍子株式会社 | Wafer mounting table |
| JP7483121B2 (en) * | 2022-02-09 | 2024-05-14 | 日本碍子株式会社 | Semiconductor manufacturing equipment parts |
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| US20040194710A1 (en) * | 2002-10-29 | 2004-10-07 | Nhk Spring Co., Ltd. | Apparatus for vapor deposition |
| CN1833312A (en) * | 2003-04-07 | 2006-09-13 | 东京毅力科创株式会社 | Loading table and heat treating apparatus having the loading table |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681185A (en) * | 2012-08-30 | 2014-03-26 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and plasma treatment device |
| CN103681185B (en) * | 2012-08-30 | 2016-05-04 | 中微半导体设备(上海)有限公司 | A kind of electrostatic chuck and plasma processing apparatus |
| CN110767596A (en) * | 2014-03-27 | 2020-02-07 | Toto株式会社 | Electrostatic chuck |
| CN110767596B (en) * | 2014-03-27 | 2023-07-25 | Toto株式会社 | Electrostatic chuck |
| CN111446145A (en) * | 2015-05-19 | 2020-07-24 | 应用材料公司 | Electrostatic puck assembly with metal bonded back plate for high temperature processing |
| CN111446145B (en) * | 2015-05-19 | 2023-08-08 | 应用材料公司 | Electrostatic puck assembly with metal bonded backing plate for high temperature processing |
| US11742225B2 (en) | 2015-05-19 | 2023-08-29 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate |
| CN109564870A (en) * | 2016-08-04 | 2019-04-02 | 日本新工芯技株式会社 | Electrode plate |
| CN109564870B (en) * | 2016-08-04 | 2023-05-02 | 日本新工芯技株式会社 | Electrode plate |
| CN113178375A (en) * | 2017-08-09 | 2021-07-27 | 东京毅力科创株式会社 | Mounting table and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011061040A (en) | 2011-03-24 |
| KR20110027621A (en) | 2011-03-16 |
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Application publication date: 20110420 |