CN102019754A - 液体喷射头、液体喷射装置和压电元件 - Google Patents
液体喷射头、液体喷射装置和压电元件 Download PDFInfo
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- CN102019754A CN102019754A CN2010102871102A CN201010287110A CN102019754A CN 102019754 A CN102019754 A CN 102019754A CN 2010102871102 A CN2010102871102 A CN 2010102871102A CN 201010287110 A CN201010287110 A CN 201010287110A CN 102019754 A CN102019754 A CN 102019754A
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- body layer
- piezoelectric body
- piezoelectric element
- substrate
- piezoelectric
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- 239000007788 liquid Substances 0.000 title claims abstract description 49
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 24
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims abstract description 24
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Abstract
本发明提供具有对环境影响小且变位特性高的压电元件的液体喷射头,采用它的液体喷射装置和压电元件。液体喷射头I具备与喷射液滴的喷嘴连通的压力发生室12和具有压电体层70和在该压电体层70的两面设置的一对电极的压电元件300,上述压电体层70包括包含钛酸钡、钛酸钙和氧化铕的钙钛矿型氧化物。液体喷射装置具有该液体喷射头。
Description
技术领域
本发明涉及液体喷射头及采用它的液体喷射装置和压电元件。
背景技术
作为液体喷射头的代表例,例如,有由振动板构成与排出墨滴的喷嘴开口连通的压力发生室的一部分,通过压电元件使该振动板变形对压力发生室的墨加压而从喷嘴开口排出墨滴的喷墨式记录头。作为喷墨式记录头中采用的压电元件,由2个电极夹持包括呈电气机械变换功能的压电材料例如压电陶瓷的压电体层而构成。这样的压电元件作为弯曲振动模式的执行器装置在液体喷射头搭载。
作为压电陶瓷,已知有采用具有高变位特性的锆钛酸铅(PZT)的液体喷射头(参照专利文献1)。但是,从环境污染的观点,寻求采用抑制了有害物质铅的含有量的压电陶瓷的液体喷射头。这里,作为不含有铅的压电陶瓷,已知具有例如ABO3表示的钙钛矿构造的BaTiO3(例如,参照专利文献2)。
但是,将包括BaTiO3的压电陶瓷用作液体喷射头的压电元件时,BaTiO3的压电特性不充分,期望进一步提高。因而,例如,提出了通过在钛酸钡(BaTiO3)中添加钛酸钙(CaTiO3)而提高耐电压性的提案(例如,参照专利文献3)。
专利文献1:日本特开2001-223404号公报。
专利文献2:日本特开2000-72539号公报。
专利文献3:日本特开平6-279110号公报。
但是,即使在压电元件采用向BaTiO3添加了CaTiO3的压电陶瓷的场合,变位特性也不充分,因此存在无法充分获得喷墨式记录头的喷射特性的问题。
发明内容
本发明针对这样的问题,以提供对环境影响小且具有变位特性高的压电元件的液体喷射头及采用它的液体喷射装置及压电元件为目的。
本发明的液体喷射头,其特征在于,具备:与喷射液滴的喷嘴连通的压力发生室;和具有压电体层和在该压电体层的两面设置的一对电极的压电元件,上述压电体层包括包含钛酸钡、钛酸钙和氧化铕的钙钛矿型氧化物。本发明的液体喷射头的压电体层具有钛酸钡、钛酸钙和氧化铕,从而对环境影响小,且变位特性高。因而,可以充分获得作为液体喷射头的喷射特性。
另外,上述压电体层优选还包含钾或者还包含硅。通过包含K或者Si,可以降低晶化温度,因此可以在更低温形成压电体层。
上述压电体层优选还包括氧化锆。从而,变位特性更好。
另外,优选上述压电体层包括下式(1)表示的钙钛矿型氧化物。从而,可以可靠地提高变位特性。
x[BaTiO3]-(1-x)[CaTiO3]-y[Eu2O3]-z[ZrO2](1)
(0.93≤x≤0.95,0.005≤y≤0.01,0.005≤z≤0.01)
本发明的液体喷射装置,其特征在于具有上述液体喷射头。通过具备具有对环境影响小、变位特性高的压电元件的液体喷射头,可以形成对环境影响小且液体喷射性能高的液体喷射装置。
另外,本发明的压电元件,其特征在于具有压电体层和在该压电体层的两面设置的一对电极,上述压电体层包括包含钛酸钡、钛酸钙和氧化铕的钙钛矿型氧化物。从而,压电体层通过具有钛酸钡、钛酸钙和氧化铕,对环境影响小,且变位特性高。
附图说明
图1是实施例1的记录头的分解立体图。
图2是实施例1的记录头的平面图及剖面图。
图3是实施例1的记录头的制造步骤的示意要部剖面图。
图4是实施例1的记录头的制造步骤的示意要部剖面图。
图5是实施例1的记录头的制造步骤的示意要部剖面图。
图6是实施例1的记录头的制造步骤的示意要部剖面图。
图7是实施例2的记录头的分解立体图。
图8是实施例2的记录头的剖面图。
图9是样品1的介电常数-温度的测定结果的示图。
图10是样品3的介电常数-温度的测定结果的示图。
图11是样品6的介电常数-温度的测定结果的示图。
图12是样品1的X线衍射图案的示图。
图13是样品6的X线衍射图案的示图。
图14是其他实施例的液体喷射装置的立体图。
符号说明:
1喷墨式记录头(液体喷射头),II喷墨式记录装置(液体喷射装置),10流路形成基板,12压力发生室,13连通部,14墨供给路径,20喷嘴板,21喷嘴开口,30保护基板,31储存器部,32压电元件保持部,40柔性基板(compliance substrate),60第1电极,61粘合层,70压电体层,80第2电极,90引线电极,100储存器,120驱动电路,121连接布线,300压电元件,510喷墨式记录头(液体喷射头),521压力发生室,522流路形成基板,523振动板,524压力发生室底板,530流路单元,531墨供给口形成基板,532储存器,533储存器形成基板,534喷嘴开口,535喷嘴板,536喷嘴连通孔,540压电元件,543第1电极(电极层),544压电体层,545第2电极(电极层),550布线基板,551布线层,552基底膜,553绝缘材料。
具体实施方式
(实施例1)
图1是本发明实施例1的液体喷射头的一例的喷墨式记录头的概略构成的分解立体图,图2是图1的平面图及其A-A′剖面图。
如图1及图2所示,在本实施例的流路形成基板10的一个面形成弹性膜50。流路形成基板10包括例如一个面的结晶面方位在(111)面优先取向的硅单晶基板。另外,本发明中,「在(111)面优先取向」包括全部晶体在(111)面取向的情况和大部分晶体(例如,90%以上)在(111)面取向的情况。弹性膜50包括例如氧化硅。另外,本实施例中,硅单晶基板在(111)面优先取向,但是不限于此。
流路形成基板10中,多个压力发生室12在其宽度方向排列。另外,在流路形成基板10的压力发生室12的长度方向外侧的区域形成连通部13,连通部13和各压力发生室12经由按各压力发生室12设置的墨供给路径14和连通路径15连通。连通部13与后述的保护基板的储存器部31连通,构成成为各压力发生室12的共用的墨室的储存器100的一部分。墨供给路径14以比压力发生室12窄的宽度形成,将从连通部13流入压力发生室12的墨的流路阻抗(阻力)保持一定。另外,本实施例中,通过从单侧缩小流路的宽度而形成墨供给路径14,但是也可以从两侧缩小流路的宽度而形成墨供给路径。另外,也可以不缩小流路的宽度,而是通过从厚度度方向缩小而形成墨供给路径。
另外,在流路形成基板10的开口面侧,被与各压力发生室12的墨供给路径14相反侧的端部附近连通的喷嘴开口21贯穿的喷嘴板20,通过粘接剂或热熔接膜等固定。另外,喷嘴板20包括例如玻璃陶瓷、硅单晶基板、不锈钢等。
另一个面,在这样的流路形成基板10的开口面的相反侧,形成如上所述的弹性膜50。在该弹性膜50上,层叠形成第1电极60和厚度10μm以下最好0.3~1.5μm的薄膜的压电体层70、第2电极80,构成压电元件300。第1电极60及第2电极80包括例如铂(Pt),第1电极60及第2电极80在(111)面优先取向。另外,第1电极60和弹性膜50之间形成粘合层61。作为粘合层61,只要可以提高下电极膜60和弹性膜50的粘合力就没有特别限定,例如,可以从厚度10~50nm的钛(Ti)、铬(Cr)、钽(Ta)、锆(Zr)及钨(W)组成的群选择的至少一个元素为主成分。通过这样在第1电极60和弹性膜50之间设置粘合层61,可以提高弹性膜50和第1电极60的粘合力。
这里,压电元件300是包含第1电极60、压电体层70及第2电极80的部分。一般地说,构成为以压电元件300的任一方的电极作为共用电极,对另一方的电极及压电体层70按压力发生室12进行图案化(构图)。本实施例中,以第1电极60作为压电元件300的共用电极,第2电极80作为压电元件300的个别电极,也可以根据驱动电路和布线的情况而颠倒。另外,这里,设置为可变位的压电元件300称为执行器装置。
第1电极60上形成的压电体层70是包含钛酸钡(例如BaTiO3)、钛酸钙(例如CaTiO3)、氧化铕(例如Eu2O3)的钙钛矿型氧化物。具体地,压电体层70以钛酸钡为主成分(例如为压电体层70全体的90%以上),而且含有钛酸钙、氧化铕(分别为例如压电体层70全体的2~10%,0.1~5%)。
这样,本实施例中,压电体层70通过含有钛酸钡、钛酸钙及氧化铕,压电元件300的耐电压特性高且变位特性高。结果,喷墨式记录头I成为耐用且很实用。以下,详细地说明。
传统,作为非铅系压电陶瓷已知的在钛酸钡添加了钛酸钙的物质,耐电压性高而变位特性低,无法用作喷墨式记录头I搭载的压电元件300的压电体层70。因而,本实施例中,在钛酸钡中,作为添加物不仅含有钛酸钙,而且含有氧化铕。通过这样还含有氧化铕,可以提高变位特性。另外,温度特性和耐久性也良好。该点在后述实验例中详细说明。
另外,压电体层70优选还含有氧化锆(例如ZrO2)。这样,若还含有氧化锆,可以进一步提高变位特性。
压电体层70优选为例如钛酸钡∶钛酸钙∶氧化铕∶氧化锆=0.93~0.95∶0.05~0.07∶0.005~0.01∶0.005~0.01(重量比),例如,由下式(1)表示。当然,不含有氧化锆的场合,下式(1)中z=0。
x[BaTiO3]-(1-x)[CaTiO3]-y[Eu2O3]-z[ZrO2](1)
(0.93≤x≤0.95,0.005≤y≤0.01,0.005≤z≤0.01)
另外,钙钛矿型氧化物是具有钙钛矿构造的化合物。该钙钛矿构造,即,ABO3型构造的A位配位12个氧,另外,B位配位6个氧,形成8面体。然后,Ba、Ca、Eu位于A位,Ti和根据需要含有的Zr位于B位。
本发明中,通过对主成分的钛酸钡少量添加氧化铕或氧化锆,Eu进入Ba存在的A位,Zr进入Ti存在的B位。这里,Ba的离子半径是149pm,Eu的离子半径是95pm,因此,Ba和Eu中,离子半径显著不同。另外,Ti的离子半径是75pm,Zr的离子半径是86pm,因此,Ti和Zr中,离子半径显著不同。从而,推测Eu或Zr进入晶格的A位或B位而导致晶格变形,从而,畴的旋转变得容易,因此压电特性(变位特性)改善。
这样的压电元件300的个别电极即各第2电极80,与从墨供给路径14侧的端部附近引出而延伸到弹性膜50上的例如包括金(Au)等的引线电极90连接。
在形成了这样的压电元件300的流路形成基板10上,即,第1电极60、弹性膜50及引线电极90上,经由粘接剂35接合具有构成储存器100的至少一部分的储存器部31的保护基板30。该储存器部31在本实施例中,在厚度方向贯通保护基板30并横跨压力发生室12的宽度方向形成,如上述,与流路形成基板10的连通部13连通,构成成为各压力发生室12的共用的墨室的储存器100。另外,也可以将流路形成基板10的连通部13按压力发生室12分割为多个,仅仅将储存器部31作为储存器100。而且,例如,也可以在流路形成基板10仅仅设置压力发生室12,在介于流路形成基板10和保护基板30之间的部件(例如,弹性膜50)设置将储存器100和各压力发生室12连通的墨供给路径14。
另外,在与保护基板30的压电元件300相对的区域,设置具有不阻碍压电元件300的运动的程度的空间的压电元件保持部32。压电元件保持部32只要具有不阻碍压电元件300的运动的程度的空间即可,该空间可以密封,也可以不密封。
这样的保护基板30优选采用与流路形成基板10的热膨胀率近似同一的材料,例如,玻璃、陶瓷材料等,本实施例中,用与流路形成基板10同一材料的硅单晶基板形成。
另外,在保护基板30,设置了在厚度方向贯通保护基板30的贯通孔33。然后,从各压电元件300引出的引线电极90的端部附近,设置为使贯通孔33露出。
另外,保护基板30上,固定了用于驱动并设的压电元件300的驱动电路120。该驱动电路120可以采用例如电路基板、半导体集成电路(IC)等。进而,驱动电路120和引线电极90经由包括接合引线等的导电线的连接布线121电气连接。
另外,在这样的保护基板30上,接合有包括密封膜41及固定板42的柔性基板40。这里,密封膜41包括刚性低的可挠性材料,由该密封膜41密封储存器部31的一个面。另外,固定板42由比较硬质的材料形成。该固定板42的与储存器100相对的区域成为在厚度方向被完全除去的开口部43,因此储存器100的一个面仅仅由可挠性密封膜41密封。
这样的本实施例的喷墨式记录头中,从与未图示外部的墨供给单元连接的墨导入口取入墨,在从储存器100到喷嘴开口21为止的内部充满墨后,根据来自驱动电路120的记录信号,在与压力发生室12对应的各第1电极60和第2电极80之间施加电压,使弹性膜50、第1电极60及压电体层70弯曲变形,从而各压力发生室12内的压力升高,从喷嘴开口21排出墨滴。
用图3~图5说明本实施例的喷墨式记录头的制造方法。图3~图5是本实施例的喷墨式记录头的制造方法的剖面图。
首先,如图3(a)所示,在多个一体地形成了流路形成基板10的硅晶片即流路形成基板用晶片110的表面,形成构成弹性膜50的氧化膜51。该氧化膜51的形成方法没有特别限定,本实施例中,使流路形成基板用晶片110热氧化,在其表面形成成为弹性膜50的二氧化硅膜51。
然后,如图3(b)所示,在氧化膜51上形成粘合层61。粘合层61的形成方法没有特别限定,可以采用溅射法、CVD法等形成。
然后,如图3(c)所示,在粘合层61上形成包括铂(Pt)的厚度50~500nm的第1电极60,将该第1电极60及粘合层61按规定形状图案化。第1电极60的形成方法没有特别限定,可以采用溅射法、CVD法等形成。本实施例中,通过溅射法形成。图案化例如可以采用反应性离子蚀刻或离子研磨等的干蚀刻。
然后,如图4(a)所示,形成以钛酸钡为主成分且还含有钛酸钙、氧化铕及根据需要的氧化锆的压电体层70。压电体层70的制造方法可以采用例如溶胶-凝胶法、MOD(Metal-Organic Decomposition,金属有机分解)法、溅射法等,本实施例采用溶胶-凝胶法形成压电体层70。这是因为,采用后述本实施例的溶胶通过溶胶-凝胶法形成压电体层70,可以抑制在压电体层70发生裂纹且可以降低成本。
以下说明一例本实施例的溶胶-凝胶法中采用的溶胶(溶液)。本实施例的溶胶是在添加了CaTiO3溶胶、Eu2O3溶胶及根据需要含有的ZrO2溶胶的BaTiO3溶胶中,进一步添加包括平均粒径10~100nm的BaTiO3的微粉而成。这样,通过在包含用于形成通常压电体层70的金属有机化合物的溶胶中添加粉末状的BaTiO3,可以提高溶胶中的BaTiO3浓度。从而,可以使固形量增加而形成厚膜的同时,使溶胶烧结时难以收缩,结果应力变小,可以抑制裂纹的发生。即,以前BaTiO3系薄膜存在容易发生裂纹的问题,而本实施例中,通过这样在溶胶中添加粉末,可以有效抑制裂纹的发生。这样的BaTiO3粉末可以采用例如堺(Sakai)化学社制BT01。
而且,优选在本实施例采用的溶胶中,添加适于使晶化温度降低的选自钾(K)及硅(Si)的至少一方。即,以前在钛酸钡系薄膜形成时,存在晶化温度高的问题,而本实施例中,通过这样在溶胶中添加选自K及Si的至少一方,可以降低晶化温度。该场合,K及Si都能以溶胶状态添加。
以下说明具体的方法。在形成了第1电极60的流路形成基板10上涂布(涂敷)前述溶胶(溶液),形成压电体前驱体膜(涂布步骤)。这里,压电体前驱体膜若是通常的PZT膜,则各自厚度形成为0.5~1.0μm,而本实施例中为1.0~2.0μm,最好为1.5~2.0μm。这是因为如上述,用本实施例的溶胶形成时,固溶量多,且在压电体层70难以发生裂纹,因此可以较厚地形成。然后,加热到规定温度并干燥一定时间(干燥步骤)。例如,本实施例中,在150~180℃保持2~10分钟进行干燥。
接着,将干燥的压电体前驱体膜加热到规定温度保持一定时间,进行脱脂(脱脂步骤)。例如,本实施例中,将压电体前驱体膜加热到300~450℃程度的温度,保持约2~10分钟进行脱脂。另外,这里的脱脂是指将压电体前驱体膜所包含的有机成分例如NO2,CO2,H2O等脱离。接着,将压电体前驱体膜通过红外线加热装置加热到规定温度并保持一定时间而进行晶化(结晶化),形成压电体膜(烧结步骤)。
通过多次反复包括这些涂布步骤、干燥步骤、脱脂步骤及烧结步骤的压电体膜形成步骤,形成复数层的压电体膜组成的压电体层70。这里,本实施例中,采用了上述溶胶,因此难以发生裂纹,可以形成厚压电体前驱体膜。从而,可以使压电体膜形成步骤的反复次数减少,成本降低。
接着,如图4(a)所示,在压电体层70上全面地形成第2电极80。然后,如图4(b)所示,将压电体层70及第2电极80在与各压力发生室12相对的区域图案化,形成压电元件300。压电体层70及第2电极80的图案化可以采用例如反应性离子蚀刻、离子研磨等的干蚀刻。
接着,形成引线电极90。具体如图4(c)所示,在流路形成基板用晶片110的全面形成例如包括金(Au)等的引线电极90后,例如,通过光刻胶等组成的掩模图案(未图示)按各压电元件300进行图案化而形成。
接着,如图5(a)所示,将硅晶片即成为多个保护基板30的保护基板用晶片130经由粘接剂35接合到流路形成基板用晶片110的压电元件300侧。
接着,如图5(b)所示,使流路形成基板用晶片110薄到规定的厚度。然后,如图5(c)所示,在流路形成基板用晶片110重新形成掩模膜52,按规定形状图案化。然后,经由掩模膜52对图6所示的流路形成基板用晶片110进行采用了KOH等的碱溶液的各向异性蚀刻(湿蚀刻),形成与压电元件300对应的压力发生室12、连通部13、墨供给路径14及连通路径15等。
然后,流路形成基板用晶片110及保护基板用晶片130的外周缘部的不要部分例如通过划片(dicing)等切断而除去。然后,将贯穿设置了喷嘴开口21的喷嘴板20接合到流路形成基板用晶片110的保护基板用晶片130的相反侧的面,并将柔性基板40接合到保护基板用晶片130,将流路形成基板用晶片110等分割为图1所示的一个芯片尺寸的流路形成基板10等,作为图1所示本实施例的喷墨式记录头I。
(实施例2)
图7是本发明的实施例2的液体喷射头的一例的喷墨式记录头的概略构成的分解立体图,图8是喷墨式记录头的剖面图。
如图示,喷墨式记录头510包括执行器单元520、固定了执行器单元520的一个流路单元530、与执行器单元520连接的布线基板550。
执行器单元520是具备压电元件540的执行器装置,具有:形成了压力发生室521的流路形成基板522;在流路形成基板522的一个面侧设置的振动板523;在流路形成基板522的另一个面侧设置的压力发生室底板524。
流路形成基板522例如包括150μm程度厚度的氧化铝(Al2O3)、氧化锆(ZrO2)等的陶瓷板,本实施例中,多个压力发生室521沿其宽度方向并设的列形成为2列。另外,在该流路形成基板522的一个面,例如,固定厚度10μm的氧化锆的薄板组成的振动板523,在压力发生室521的一个面由该振动板523密封。
压力发生室底板524在流路形成基板522的另一个面侧固定,密封压力发生室521的另一个面,并具有:设置在压力发生室521的长度方向的一个端部附近,将压力发生室521和后述储存器连通的供给连通孔525;设置在压力发生室521的长度方向的另一个端部附近,与后述喷嘴开口534连通的喷嘴连通孔526。
压电元件540设置在振动板523上的与各压力发生室521相对的各个区域,例如,本实施例中,压力发生室521的列设为2列,因此压电元件540的列也设置2列。
这里,各压电元件540由振动板523上设置的第1电极(电极层)543、按各压力发生室521独立设置的压电体层(压电陶瓷层)544以及各压电体层544上设置的第2电极(电极层)545构成。另外,本实施例中,压电体层544是一般认为膜厚较厚的(例如10~1000μm)压电材料,例如,是将金属氧化物、金属碳酸盐的粉末采用在物理混合、粉碎、成形后进行烧结等的固相法等制作的所谓块状的压电体层544。另外,第1电极543设置成横跨并设的压电体层544,成为各压电元件540的共用电极,起到振动板的一部分的功能。当然,也可以将第1电极543按各压电体层544设置。
另外,执行器单元520的各层即流路形成基板522、振动板523及压力发生室底板524是将粘土状的陶瓷材料、所谓生片以规定的厚度成形并在贯穿设置了例如压力发生室521等后,通过层叠烧结而无需粘接剂地一体化。然后,在振动板523上形成压电元件540。
第1电极543上形成的压电体层544是与实施例1同样的组成,是包括钛酸钡、钛酸钙、氧化铕的钙钛矿型氧化物。具体地,压电体层544以钛酸钡为主成分(例如为压电体层544全体的90%以上),而且含有钛酸钙、氧化铕(分别为例如压电体层544全体的2~10%,0.1~5%)。这样,本实施例中也与实施例1同样,压电体层544通过含有钛酸钡,钛酸钙及氧化铕,压电元件300的耐电压特性高,且,变位特性高。结果,喷墨式记录头510成为耐用。以下,详细地说明。
传统,作为非铅系压电陶瓷已知的在钛酸钡添加了钛酸钙的物质,耐电压性高而变位特性低,无法用作喷墨式记录头搭载的压电元件的压电体层。因而,本实施例中,在钛酸钡中,作为添加物不仅含有钛酸钙,而且含有氧化铕。通过这样还含有氧化铕,可以提高变位特性。另外,温度特性和耐久性也良好。该点在后述实验例中详细说明。
压电体层544与实施例1同样,优选还含有氧化锆。这样,若还含有氧化锆,可以进一步提高变位特性。
压电体层544优选为钛酸钡∶钛酸钙∶氧化铕∶氧化锆=0.93~0.95∶0.05~0.07∶0.005~0.01∶0.005~0.01(重量比),例如,由下式(1)表示。当然,不含有氧化锆的场合,下式(1)中z=0。
x[BaTiO3]-(1-x)[CaTiO3]-y[Eu2O3]-z[ZrO2](1)
(0.93≤x≤0.95,0.005≤y≤0.01,0.005≤z≤0.01)
另外,钙钛矿型氧化物是具有钙钛矿构造的化合物。该钙钛矿构造,即,ABO3型构造的A位配位12个氧,另外,B位配位6个氧,形成8面体。然后,Ba、Ca、Eu位于A位,Ti和根据需要含有的Zr位于B位。
本发明中,通过对主成分的钛酸钡少量添加氧化铕或氧化锆,Eu进入Ba存在的A位,Zr进入Ti存在的B位。这里,Ba的离子半径是149pm,Eu的离子半径是95pm,因此,Ba和Eu中,离子半径显著不同。另外,Ti的离子半径是75pm,Zr的离子半径是86pm,因此,Ti和Zr中,离子半径显著不同。从而,推测Eu或Zr进入晶格的A位或B位而导致晶格变形,从而,畴的旋转变得容易,因此压电特性(变位特性)改善。
另外,具有这样的压电体层544的压电元件540的制造方法在后段详述。
另一个面,流路单元530包括:与执行器单元520的压力发生室底板524接合的墨供给口形成基板531;形成了成为多个压力发生室521的共用墨室的储存器532的储存器形成基板533;形成了喷嘴开口534的喷嘴板535。
墨供给口形成基板531包括厚度150μm的氧化锆的薄板,贯穿设置了将喷嘴开口534和压力发生室521连接的喷嘴连通孔536,和与前述的供给连通孔525共同将储存器532和压力发生室521连接的墨供给口537,另外,设置了与各储存器532连通,供给来自外部的墨箱(tank)的墨的墨导入口538。
储存器形成基板533在适于构成墨流路的例如150μm的不锈钢等的耐腐蚀性板材上,具有:从外部的墨箱(未图示)接受墨的供给并向压力发生室521供给墨的储存器532;将压力发生室521和喷嘴开口534连通的喷嘴连通孔539。
喷嘴板535在例如不锈钢组成的薄板以与压力发生室521同一的排列间距贯穿设置喷嘴开口534而形成。例如,本实施例中,流路单元530中压力发生室521的列设置了2列,因此,在喷嘴板535中喷嘴开口534的列也形成2列。另外,该喷嘴板535与储存器形成基板533的流路形成基板522的相反面接合,密封储存器532的一个面。
这样的流路单元530通过将这些墨供给口形成基板531、储存器形成基板533及喷嘴板535通过粘接剂、热熔接膜等固定而形成。另外,本实施例中,储存器形成基板533及喷嘴板535通过不锈钢形成,但是例如也可以用陶瓷形成,与执行器单元520同样,一体地形成流路单元530。
这样的流路单元530和执行器单元520经由粘接剂、热熔接膜接合而固定。
另外,如图8所示,在与各压电元件540的长度方向的一端部的压力发生室521的周壁相对的区域,设置与压电元件540导通的端子部546。端子部546针对每个压电元件540设置,与压电元件540的第2电极545导通的端子部546和与压电元件的并设方向两端部侧引出的第1电极543导通的端子部(未图示)在压电元件540的并设方向上并设。本实施例中,在并设的压电元件540的列和列间并设的端子部546的列设为2列。
这样的端子部546离流路形成基板522(振动板523)的高度即上端面以比压电元件540离流路形成基板522(振动板523)的高度高的方式形成。这是因为,将端子部546和布线基板550的布线层551连接时,布线基板550与压电元件540触接,防止了压电元件540的变位降低。本实施例中,端子部546离流路形成基板522(振动板523)的高度形成为20μm。
另外,这样的端子部546可以采用例如银(Ag)等导电性高的金属材料通过丝网印刷形成。
与压电元件540的各第2电极545及第1电极543导通的端子部与在布线基板550设置的布线层551电气连接,经由该布线基板550,来自未图示驱动电路的驱动信号供给各压电元件540。另外,驱动电路虽然没有特别图示,但是可以在布线基板550上安装,另外,也可以在布线基板550以外安装。
布线基板550包括横跨2列的压电元件540设置一个的例如柔性印刷电路板(FPC)或带载封装(TCP)等。详细地说,布线基板550是例如在聚酰亚胺等的基底膜552的表面形成以铜箔为基底实施了锡镀等的规定图案的布线层551并将与布线层551的端子部546连接的端部以外的区域用光刻胶等的绝缘材料553覆盖而成的。
另外,在布线基板550的与并设的压电元件540的列和列间相对的区域设置贯通孔554,布线层551在贯通孔554侧的端部与端子部546连接。另外,在未设置贯通孔554的基底膜552的表面连续形成与一列的压电元件540连接的布线层551和与另一列的压电元件540连接的布线层551后,以切断与2列的压电元件540连接的布线层551的方式,在基底膜552设置形成布线基板550的贯通孔554。
布线基板550的布线层551和与压电元件540导通的端子部经由各向异性导电材组成的连接层555被电气及机械连接。
这样构成的喷墨式记录头510中,从墨盒(贮留单元)经由墨导入口538从储存器532内取入墨,使从储存器532到喷嘴开口534为止的液体流路内充满墨后,通过将来自未图示驱动电路的记录信号经由布线基板550供给压电元件540,对与各压力发生室521对应的各压电元件540施加电压,使压电元件540以及振动板523弯曲变形,从而各压力发生室521内的压力升高,从各喷嘴开口534喷射墨滴。
这里,说明本实施例的喷墨式记录头的制造方法的一例。另外,压电元件的制造方法以外的部分与实施例1同样或如上所述,因此省略。
首先,作为用于获得压电体层544的主成分的出发原料,例如,准备BaCO3、TiO2、Eu2O3以及根据需要含有的ZrO2的粉末,使这些粉末在干燥状态以规定比率称量后,例如,添加纯水、乙醇等,用球磨机混合、粉碎,作为原料混合物。而且,使该原料混合物干燥后,例如,在采用BaCO3,TiO2,Eu2O3的粉末的场合以900~1100℃,另外,在采用BaCO3,TiO2,Eu2O3,ZrO2的粉末的场合以1000~1200℃,进行合成(假烧结),从而形成含有BaTiO3、Eu2O3、ZrO2的粉末。
接着,在该粉末添加CaTiO3液(溶胶)用球磨机等混合,使混合物干燥后,在采用BaCO3,TiO2,Eu2O3的粉末的场合以400~600℃程度的温度,另外,在采用BaCO3,TiO2,Eu2O3,ZrO2的粉末的场合以600~700℃程度的温度,进行脱脂。然后,在脱脂物粉碎后的粉末添加规定量的粘结剂进行造粒,通过模具冲压等在规定压力(例如1000~2000kg/cm2)下成形。然后将成形物以1000~1400℃程度的温度烧结,从而形成包括BaTiO3-CaTiO3-Eu2O3或BaTiO3-CaTiO3-Eu2O3-ZrO2的所谓块状的压电材料。
然后,研磨该压电材料,在其两面分别形成第1电极543及第2电极545,而且进行测试(polling)、各种测定,形成上述的压电元件540。将形成的压电元件540在流路形成基板522搭载,作为本实施例的喷墨式记录头。即,通过由这样的方法形成压电元件540,如上所述,可以实现环境友好且与温度变化无关地良好喷射墨滴的喷墨式记录头。
特别地,本实施例中,在包含钛酸钡、氧化铕以及根据需要含有的ZrO2的粉末中添加钛酸钙液。即,兼用固相法和液相法,在压电材料的制造途中添加钛酸钙液。从而,可以更可靠地改善压电体层544的耐电压特性和压电特性。当然,钛酸钙可以粉末的状态添加,也可以作为出发原料添加。
通过以下的实验例更详细说明通过这样的制造方法获得的压电体层544的变位特性等。
(样品1)
在BaTiO3粉末添加7重量%的聚乙烯醇(PVA)水溶液进行造粒后,通过模具冲压以压力1500kg/cm2成形,在1350℃烧结4小时,制作出样品(样本或试料)1。获得的样品1是表1所示x,y及z的上述式(1)表示的压电体层。
(样品2)
将BaCO3及TiO2的粉末在干燥状态称量后,添加乙醇等兼用球磨机混合、粉碎,作为原料混合物。而且,将该原料混合物干燥后,在1000℃进行假烧结,形成BaTiO3的粉末。
然后,以BaTiO3和CaTiO3的混合比率为重量比95∶5的方式,在获得的BaTiO3粉末添加CaTiO3液(溶胶)进行混合,在650℃脱脂1小时。然后,在脱脂物粉碎后的粉末中与样品1同样添加7重量%的PVA水溶液进行造粒,通过模具冲压以1500kg/cm2成形。然后将成形物在1350℃烧结4小时,制作样品2。获得的样品2是如表1所示x,y及z的上述式(1)表示的压电体层。
(样品3)
取代使BaTiO3和CaTiO3的混合比率为重量比95∶5,而采用重量比93∶7以外,进行与样品2同样的操作。
(样品4)
将BaCO3、TiO2及Eu2O3粉末在干燥状态,以Eu2O3对BaTiO3和CaTiO3的总量为重量比0.5%的方式称量后,添加乙醇等兼用球磨机混合、粉碎后作为原料混合物,另外,烧结温度为1300℃,除此以外,进行与样品3同样的操作。
(样品5)
除Eu2O3对BaTiO3和CaTiO3的总量为重量比1%以外,进行与样品4同样的操作。
(样品6)
将BaCO3、TiO2、Eu2O3及ZrO2粉末在干燥状态,相对于BaTiO3和CaTiO3的总量,以Eu2O3为重量比0.5%及ZrO2为重量比0.5%的方式称量后,添加乙醇等兼用球磨机混合、粉碎后作为原料混合物,另外,烧结温度为1350℃,除此以外,进行与样品4同样的操作。
(样品7)
以ZrO2对BaTiO3和CaTiO3的总量为重量比1%的方式,另外,烧结温度为1400℃,除此以外,进行与样品6同样的操作。
(样品8)
将BaCO3、TiO2、Eu2O3及ZrO2粉末在干燥状态,相对于BaTiO3和CaTiO3的总量,以Eu2O3为重量比1%及ZrO2为重量比0.5%的方式称量后,添加乙醇等兼用球磨机混合、粉碎后作为原料混合物,另外,烧结温度为1400℃,除此以外,进行与样品5同样的操作。
(试验例)
测定这样形成的样品1~8的分极方向的压电常数d33(变位特性)、介质损耗(tanδ)、密度、晶体构造的相移温度(To-t)及居里温度Tc。结果如表1等所示。另外,d33用UK PIEZOTEST制压电d33测量仪测定,tanδ用惠普制HP4294A测定,密度用ARCHIMIDES法测定。另外,用自动记录式介电常数测定***(LCR meter)使温度变化,测定介电常数εr,求出相移温度。介电常数-温度的测定结果的一例如图9(样品1)、图10(样品3)、图11(样品6)所示。
其结果,在BaTiO3添加了CaTiO3的样品2及样品3与仅仅BaTiO3的样品1相比,d33显著小,进一步添加Eu2O3的样品4为209pC/N,样品5为182pC/N。从而,通过进一步添加Eu2O3,可以提高变位特性。
通过进一步添加ZrO2,含有BaTiO3、CaTiO3、Eu2O3及ZrO2的样品6~8与不含有ZrO2的样品4及样品5相比,变位特性进一步提高。具体地,含有ZrO2的样品6与除了不含有ZrO2以外同一组成比的样品4相比,d33提高了10%程度。另外,含有ZrO2的样品8与除了不含有ZrO2以外同一组成比的样品5相比,d33提高了10%程度。另外,发现样品7及样品8的d33稍小,这是因为密度与其他样品1~6比较小1成左右,如果延长烧结时间使密度与其他样品1~6同程度,则成为与样品6同程度以上的d33。
另外,也提高了温度特性。具体如图9~11所示,居里温度Tc在BaTiO3和在其中添加了CaTiO3、Eu2O3及ZrO2的系列中,几乎不变。另一个面,如表1、图9~11所示,晶体构造的相移温度(To-t),具体为从斜方晶向正方晶相转移的温度,通过介电常数测定观察到峰值,样品1(图9)中,在室温(19℃附近)观察到To-t的峰值,而在其他样品2~7中,即使在-30℃附近也观察不到,因此可以明白在样品2~7中To-t不足-30℃。这里,在Tc和To-t间的温度中,如图9~11所示,介电常数等的特性几乎不随温度变化。从而,可以明白,在Tc大致同等的样品1~7中,To-t低的样品2~7的特性几乎不随温度变化,是温度特性良好的压电体层。
因此可以明白,介质损耗(tanδ)在样品2~7中足够低,耐久性良好。
另外,采用Bruker AXS社制的「D8 Discover」,X线源使用CuKα线,在室温下也求出样品1~8的粉末的X线衍射图案。结果的一例如图12(样品1)及图13(样品6)所示。其结果,全部的样品1~7中,形成ABO3型构造,观测到由其他异相引起的峰值。
【表1】
(其他实施例)
以上,说明了本发明的实施例,但是本发明的基本构成不限于上述情况。例如,实施例1中,作为压电体层70,示例了采用溶胶-凝胶法、MOD法等将涂布压电体前驱体溶液而形成的压电体前驱体膜加热并晶化的化学溶液法或采用溅射法等的气相法制作的实例,也可以是如实施例2的压电体层544那样采用固相法等制作的所谓块状的压电体层。另外,作为实施例2的压电体层544,也可以是如实施例1的压电体层70那样采用化学溶液法、气相法制作的压电体层。
另外,上述实施例中,作为流路形成基板10,示例了硅单晶基板、陶瓷板,但是没有特别限定,例如,也可以采用SOI基板、玻璃等的材料。
而且,上述实施例中,示例了在基板上依次层叠第1电极、压电体层及第2电极的压电元件,但是没有特别限定,例如,本发明也可适用于使压电材料和电极形成材料交互层叠并在轴方向伸缩的纵振动型的压电元件。
另外,这些实施例的喷墨式记录头构成具备与墨盒等连通的墨流路的记录头单元的一部分,搭载到喷墨式记录装置。图14是该喷墨式记录装置的一例的概略图。
图14所示喷墨式记录装置II中,具有喷墨式记录头I的记录头单元1A及1B以可拆卸的方式设置了构成墨供给单元的墨盒2A及2B,搭载了该记录头单元1A及1B的托架3设置为可在装置本体4上安装的托架轴5沿着轴方向自由移动。该记录头单元1A及1B,例如,分别排出黑色墨组成物及彩色墨组成物。
驱动电动机6的驱动力经由未图示多个齿轮及同步带7传达到托架3,从而,搭载记录头单元1A及1B的托架3沿托架轴5移动。另一个面,在装置本体4沿托架轴5设置了压板(platen)8,由未图示给纸辊等供给的纸等的记录媒体即记录片S卷绕到压板8进行传送。
另外,上述各实施例中,作为液体喷射头的一例,说明了喷墨式记录头,但是本发明以广义的液体喷射头为对象,当然也适用于喷射墨以外的液体的液体喷射头。作为其他液体喷射头,例如有,打印机等的图像记录装置中采用的各种的记录头、液晶显示器等的滤色镜的制造中采用的色材喷射头、有机EL显示器、FED(场致发光显示器)等的电极形成中采用的电极材料喷射头、生物芯片制造中采用的生体有机物喷射头等。
另外,本发明不限于以喷墨式记录头为代表的液体喷射头中采用的压电执行器,在超音波发信机等的超音波装置、压力传感器、超音波电动机等其他压电元件中也适用。
Claims (7)
1.一种液体喷射头,其特征在于,具备:
压力发生室,其与喷射液滴的喷嘴连通;和
压电元件,其具有压电体层和在该压电体层的两面设置的一对电极;
上述压电体层包括包含钛酸钡、钛酸钙和氧化铕的钙钛矿型氧化物。
2.根据权利要求1所述的液体喷射头,其特征在于,
上述压电体层还包含钾。
3.根据权利要求1或2所述的液体喷射头,其特征在于,
上述压电体层还包含硅。
4.根据权利要求1~3的任一项所述的液体喷射头,其特征在于,
上述压电体层还包含氧化锆。
5.根据权利要求4所述的液体喷射头,其特征在于,
上述压电体层包括由下式(1)表示的钙钛矿型氧化物,
x[BaTiO3]-(1-x)[CaTiO3]-y[Eu2O3]-z[ZrO2](1)
(0.93≤x≤0.95,0.005≤y≤0.01,0.005≤z≤0.01)。
6.一种液体喷射装置,其特征在于,
具有根据权利要求1~5的任一项所述的液体喷射头。
7.一种压电元件,其特征在于,
具有压电体层和在该压电体层的两面设置的一对电极,
上述压电体层包括包含钛酸钡、钛酸钙和氧化铕的钙钛矿型氧化物。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103373070A (zh) * | 2012-04-12 | 2013-10-30 | 精工电子打印科技有限公司 | 液体喷射头的制造方法、液体喷射头及液体喷射装置 |
TWI576249B (zh) * | 2012-09-10 | 2017-04-01 | 松下知識產權經營股份有限公司 | 線狀噴頭及噴墨裝置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013218259A (ja) * | 2012-03-16 | 2013-10-24 | Canon Inc | 塵埃除去装置および撮像装置 |
TWI786907B (zh) * | 2021-10-28 | 2022-12-11 | 國立中央大學 | 振盪器頻率調變的方法及振盪器壓電結構 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1708211A2 (en) * | 2005-04-01 | 2006-10-04 | TDK Corporation | Multilayer ceramic capacitor based on barium titanate or barium calcium titanate |
CN1848317A (zh) * | 2005-04-01 | 2006-10-18 | Tdk株式会社 | 电子部件 |
CN101049758A (zh) * | 2006-04-03 | 2007-10-10 | 精工爱普生株式会社 | 促动器装置及液体喷射头和液体喷射装置 |
CN101104558A (zh) * | 2006-06-12 | 2008-01-16 | Tdk株式会社 | 电子部件、电介质陶瓷组合物及其制造方法 |
JP4039029B2 (ja) * | 2001-10-23 | 2008-01-30 | 株式会社村田製作所 | 圧電セラミックス、圧電素子、および積層型圧電素子 |
WO2009037922A1 (ja) * | 2007-09-19 | 2009-03-26 | Murata Manufacturing Co., Ltd. | 誘電体セラミック、及び積層セラミックコンデンサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2885599B2 (ja) | 1993-03-24 | 1999-04-26 | セントラル硝子株式会社 | チタン酸バリウム系粉体組成物及びこれを用いた半導体磁器組成物の製造法 |
JP2000072539A (ja) | 1998-08-31 | 2000-03-07 | Kyocera Corp | 圧電体 |
JP4051654B2 (ja) | 2000-02-08 | 2008-02-27 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ |
JP4859333B2 (ja) * | 2002-03-25 | 2012-01-25 | セイコーエプソン株式会社 | 電子デバイス用基板の製造方法 |
DE102006015330B4 (de) | 2006-04-03 | 2009-09-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bleifreier piezokeramischer Werkstoff aus dem Mischsystem Erdalkali-Perowskit und Bismut-Metall-Oxid und Verfahren zum Herstellen des Werkstoffs |
-
2010
- 2010-03-12 JP JP2010056802A patent/JP2011086903A/ja active Pending
- 2010-09-10 US US12/879,597 patent/US8506058B2/en active Active
- 2010-09-13 EP EP10176366A patent/EP2296200A1/en not_active Withdrawn
- 2010-09-15 CN CN2010102871102A patent/CN102019754A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4039029B2 (ja) * | 2001-10-23 | 2008-01-30 | 株式会社村田製作所 | 圧電セラミックス、圧電素子、および積層型圧電素子 |
EP1708211A2 (en) * | 2005-04-01 | 2006-10-04 | TDK Corporation | Multilayer ceramic capacitor based on barium titanate or barium calcium titanate |
CN1848317A (zh) * | 2005-04-01 | 2006-10-18 | Tdk株式会社 | 电子部件 |
CN101049758A (zh) * | 2006-04-03 | 2007-10-10 | 精工爱普生株式会社 | 促动器装置及液体喷射头和液体喷射装置 |
CN101104558A (zh) * | 2006-06-12 | 2008-01-16 | Tdk株式会社 | 电子部件、电介质陶瓷组合物及其制造方法 |
WO2009037922A1 (ja) * | 2007-09-19 | 2009-03-26 | Murata Manufacturing Co., Ltd. | 誘電体セラミック、及び積層セラミックコンデンサ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103373070A (zh) * | 2012-04-12 | 2013-10-30 | 精工电子打印科技有限公司 | 液体喷射头的制造方法、液体喷射头及液体喷射装置 |
CN103373070B (zh) * | 2012-04-12 | 2016-12-28 | 精工电子打印科技有限公司 | 液体喷射头的制造方法、液体喷射头及液体喷射装置 |
TWI576249B (zh) * | 2012-09-10 | 2017-04-01 | 松下知識產權經營股份有限公司 | 線狀噴頭及噴墨裝置 |
Also Published As
Publication number | Publication date |
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US8506058B2 (en) | 2013-08-13 |
JP2011086903A (ja) | 2011-04-28 |
US20110063379A1 (en) | 2011-03-17 |
EP2296200A1 (en) | 2011-03-16 |
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