CN102010195B - Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof - Google Patents
Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof Download PDFInfo
- Publication number
- CN102010195B CN102010195B CN 201010271191 CN201010271191A CN102010195B CN 102010195 B CN102010195 B CN 102010195B CN 201010271191 CN201010271191 CN 201010271191 CN 201010271191 A CN201010271191 A CN 201010271191A CN 102010195 B CN102010195 B CN 102010195B
- Authority
- CN
- China
- Prior art keywords
- srbi
- molybdenum
- preparation
- piezoelectric ceramic
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention relates to a zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and a preparation method thereof, belonging to the field of piezoelectric ceramic materials. The novel piezoelectric ceramic material can be prepared by doping Zr and Mo at Ta position in a certain mol ratio according to a preparation method of a solid-phase process, with a SrBi2Ta2O9 system leadless piezoelectric ceramic material as a matrix. The formula of the leadless piezoelectric ceramic material is SrBi2(Zr0.5Mo0.5)xTa2-xO9, wherein x is not less than 0 and not more than 2. On the basis of SrBi2Ta2O9, the material improves the piezoelectric constant and reduces the dielectric constant. Meanwhile, the layer-shaped leadless piezoelectric ceramic material has the advantages of low electromechanical coupling coefficient, high mechanical quality factor and the like, can be used for preparing various piezoelectric ceramic elements, can be assembled into various piezoelectric sensors and has excellent performance.
Description
Technical field
The present invention relates to bismuth stratiform lead-free piezoceramic material of a kind of mix zirconium and molybdenum and preparation method thereof, belong to the piezoelectric ceramic preparing technical field.
Background technology
In the piezoelectric ceramic field, occupied an leading position by lead zirconate titanate (PZT) for a long time.Yet lead zirconate titanate ceramic is leaded pottery, and wherein lead oxide (or lead orthoplumbate) accounts for about 70% of raw material gross mass.Leaded piezoelectricity ferro pottery brings harm all can for environment and the mankind in processing, sintering process and use procedure.Therefore, exploitation without the environment compatibility piezoceramic material of lead base be one urgent and have a problem of important scientific meaning.
At present, both at home and abroad the leadless piezoelectric ceramics system of research mainly contains: barium phthalate base, bismuth laminated, bismuth sodium titanate based, base metal niobate system and tungsten bronze structure leadless piezoelectric ceramics.Wherein, the bismuth laminated leadless piezoelectric ceramic material has the characteristics such as photoelectric effect, nonlinear optical effect, unusual photovoltaic effect, photorefractive effect as a kind of ferroelectric material; Also has simultaneously high Curie temperature, the advantage such as good fatigue resistance and leakage current are little and be subject to researcher's attention.But the piezoelectric property of bismuth laminated leadless piezoelectric ceramic is also not ideal, and polarization intensity is higher, and existing angle from process modification and prescription improvement is studied it, greatly improves the piezoelectric property of bismuth laminated leadless piezoelectric ceramic material.
In the bismuth oxide-based layered perovskite lead-free piezoceramic material, SrBi
2Ta
2O
9Be one of material of most study, its dielectric and piezoelectric properties is more stable, but also has the shortcomings such as polarization intensity is higher, sintering temperature is higher.In practice, Zr
4+And Mo
6+With Ta
5+Ionic radius is close, also so that its electricity price is consistent, therefore when composite permutation Ta, can make SrBi by compound
2Ta
2O
9The slippage of dislocation motion and crystal boundary appears in crystal grain inside, realizes that it is to SrBi
2Ta
2O
9The complex phase substitution of piezoceramic material when reducing polarization intensity, improves its piezoelectric property and dielectric property as much as possible.
Up to now, yet there are no with zirconium and molybdenum atom replacement SrBi
2Ta
2O
9Leadless piezoelectric ceramics and the report that its piezoelectric property is affected.
Summary of the invention
The object of the invention is to utilize metallic element zirconium and molybdenum to SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9In the Ta ion carry out substituting modification, reduce its polarization intensity, improve its piezoelectric property, prepare a kind of novel, environmentally friendly bismuth laminated piezoelectric ceramic material.
The composition formula of material of the present invention is SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9, wherein in 0≤x≤2.
Material preparation method of the present invention is as follows:
(1) be to prepare burden by above-mentioned stoicheiometry, raw material choose strontium carbonate (SrCO
3), bismuth oxide (Bi
2O
3), tantalum pentoxide (Ta
2O
5), zirconia (ZrO
2) and molybdenum oxide (MoO
3), its final structure is SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9Solid solution structure.
(2) take by weighing an amount of SrCO according to above-mentioned chemical formula proportioning
3, Bi
2O
3, ZrO
2, MoO
3, Ta
2O
5Deng raw material, with alcohol as dispersant, utilize the planetary ball mill ball mill mixing after 12~24 hours, the discharging oven dry, mixed material is ground, the dry-pressing under the pressure condition of 20~30MPa of gained powder is in blocks, then open wide sintering 800 ℃-1300 ℃ lower insulations, temperature retention time is 0.1-6 hour, and heating rate is 1~20 ℃/min.
Effect of the present invention is: pass through Zr
4+And Mo
6+To SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9In Ta
5+Carry out substituting modification, by analyzing the different doping proportionings of contrast and firing temperature to the impact of its piezoelectric property, obtain a kind of low relative dielectric constant ε, low-dielectric loss value tan δ, high piezoelectric constant d
33Novel dominance can lead-free piezoceramic material, to satisfy the needs of productive life.
The implementation step
Below in conjunction with example characteristics of the present invention are described further book, but are not only to be confined to following embodiment.
Embodiment 1:
The present invention is with SrCO
3(analyzing pure), Bi
2O
3(analyzing pure), ZrO
2(analyzing pure), MoO
3(analyzing pure) and Ta
2O
5(analyzing pure) is raw material, gets x=0.1 according to stoichiometric equation, a=0.05.Then calculate the quality of each raw material and prepare burden, with alcohol as ball-milling medium, utilized the planetary ball mill ball mill mixing 12 hours, the discharging oven dry, mixed material is ground, the dry-pressing under the pressure condition of 30MPa of gained powder is in blocks, then at 1000 ℃ of lower unlimited sintering, be incubated 3 hours and become porcelain, heating rate is 5 ℃/min.Be about 0.5mm with the two-sided parallel polished of the ceramic disks of burning till to thickness, clean with ultrasonic cleaning after, the two-sided silver electrode that is coated with, making alive polarizes in silicone oil.Polarization condition is in 40 ℃ of silicone oil, adds 4kV/mm voltage and keeps 5 minutes.
SrBi
2(Zr
0.5Mo
0.5)
0.1Ta
1.9O
9The measured performance of leadless piezoelectric ceramics sample is: piezoelectric constant d
33=20pC/N, DIELECTRIC CONSTANT ε=185, electromechanical coupling factor K
p=5.2%, mechanical quality factor Q
m=2960.
Embodiment 2:
The present invention is with SrCO
3(analyzing pure), Bi
2O
3(analyzing pure), ZrO
2(analyzing pure), MoO
3(analyzing pure) and Ta
2O
5(analyzing pure) is raw material, gets x=0.1 according to stoichiometric equation, a=0.05.Then calculate the quality of each raw material and prepare burden, with alcohol as ball-milling medium, utilized the planetary ball mill ball mill mixing 12 hours, the discharging oven dry, mixed material is ground, the dry-pressing under the pressure condition of 30MPa of gained powder is in blocks, then at 1050 ℃ of lower unlimited sintering, be incubated 3 hours and become porcelain, heating rate is 5 ℃/min.Be about 0.5mm with the two-sided parallel polished of the ceramic disks of burning till to thickness, clean with ultrasonic cleaning after, the two-sided silver electrode that is coated with, making alive polarizes in silicone oil.Polarization condition is in 40 ℃ of silicone oil, adds 4kV/mm voltage and keeps 5 minutes.
Under this condition, SrBi
2(Zr
0.5Mo
0.5)
0.1Ta
1.9O
9The measured performance of leadless piezoelectric ceramics sample is: piezoelectric constant d
33=17pC/N, DIELECTRIC CONSTANT ε=180, electromechanical coupling factor K
p=5.4%, mechanical quality factor Q
m=2610.
Embodiment 3:
The present invention is with SrCO
3(analyzing pure), Bi
2O
3(analyzing pure), ZrO
2(analyzing pure), MoO
3(analyzing pure) and Ta
2O
5(analyzing pure) is raw material, gets x=0.1 according to stoichiometric equation, a=0.05.Then calculate the quality of each raw material and prepare burden, with alcohol as ball-milling medium, utilized the planetary ball mill ball mill mixing 12 hours, the discharging oven dry, mixed material is ground, the dry-pressing under the pressure condition of 30MPa of gained powder is in blocks, then at 1100 ℃ of lower unlimited sintering, be incubated 3 hours and become porcelain, heating rate is 5 ℃/min.Be about 0.5mm with the two-sided parallel polished of the ceramic disks of burning till to thickness, clean with ultrasonic cleaning after, the two-sided silver electrode that is coated with, making alive polarizes in silicone oil.Polarization condition is in 40 ℃ of silicone oil, adds 4kV/mm voltage and keeps 5 minutes.
Under this condition, SrBi
2(Zr
0.5Mo
0.5)
0.1Ta
1.9O
9The measured performance of leadless piezoelectric ceramics sample is: piezoelectric constant d
33=18pC/N, DIELECTRIC CONSTANT ε=183, electromechanical coupling factor K
p=6.0%, mechanical quality factor Q
m=2390.
Claims (7)
1. the SrBi of doping zirconium and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9System bismuth stratiform leadless piezoelectric ceramics is characterized in that:
Chemical formula is: SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9, 0<x≤2 wherein.
2. SrBi by doping zirconium claimed in claim 1 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9The preparation method of (wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material, key step comprise that batching, batch mixing, drying, grinding, dry-pressing formed, sintering, polishing, electric polarization process, and it is characterized in that:
(1) according to chemical formula SrBi
2(Zr
0.5Mo
0.5)
xTa
2-xO
9Join and get raw material;
(2) sintering temperature is 800 ℃-1300 ℃, and temperature retention time is 0.1-6 hour.
3. according to the SrBi of doping zirconium claimed in claim 2 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9The preparation method of (wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material is characterized in that adopting SrCO
3, Bi
2O
3, ZrO
2, MoO
3, Ta
2O
5Be raw material.
4. according to the SrBi of doping zirconium claimed in claim 2 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9The preparation method of (wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material is characterized in that batch mixing adopts planetary ball mill technique, take alcohol as ball-milling medium.
5. according to the SrBi of doping zirconium claimed in claim 2 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9The preparation method of (wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material is characterized in that dry-pressing formed pressure is 0.1~100MPa.
6. according to the SrBi of doping zirconium claimed in claim 2 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9The preparation method of (wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material is characterized in that adopting and opens wide the synthetic method of calcining, and its sintering temperature is 800 ℃-1300 ℃, and temperature retention time is 0.1-6 hour.
7. according to the SrBi of doping zirconium claimed in claim 1 and molybdenum
2(Zr
0.5Mo
0.5)
xTa
2-xO
9(wherein 0<x≤2) system bismuth stratiform lead-free piezoceramic material, it is mainly used in the piezo ceramic element of the various shapes of preparation or is assembled into all kinds of piezoelectric transducers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010271191 CN102010195B (en) | 2010-09-03 | 2010-09-03 | Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010271191 CN102010195B (en) | 2010-09-03 | 2010-09-03 | Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102010195A CN102010195A (en) | 2011-04-13 |
CN102010195B true CN102010195B (en) | 2013-04-03 |
Family
ID=43840552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010271191 Active CN102010195B (en) | 2010-09-03 | 2010-09-03 | Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102010195B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106946563B (en) * | 2017-04-20 | 2019-05-03 | 成都新柯力化工科技有限公司 | A kind of low cost leadless piezoelectric ceramics and preparation method |
US10319426B2 (en) | 2017-05-09 | 2019-06-11 | Micron Technology, Inc. | Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods |
CN109704761B (en) * | 2019-01-25 | 2022-03-01 | 杭州电子科技大学 | Nb-position Cr/Mo co-doped bismuth calcium niobate high-temperature piezoelectric ceramic material and preparation method thereof |
CN112979311B (en) * | 2021-04-30 | 2022-10-14 | 昆明理工大学 | Nanocrystalline A4B2O9 type tantalate ceramic prepared by ultralow temperature sintering and method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4423872B2 (en) * | 2003-03-28 | 2010-03-03 | Tdk株式会社 | Piezoelectric ceramics and manufacturing method thereof |
JP4849338B2 (en) * | 2007-03-26 | 2012-01-11 | Tdk株式会社 | Piezoelectric ceramic composition |
JP5214373B2 (en) * | 2008-08-29 | 2013-06-19 | 太陽誘電株式会社 | Piezoelectric ceramics, manufacturing method thereof, and piezoelectric device |
-
2010
- 2010-09-03 CN CN 201010271191 patent/CN102010195B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102010195A (en) | 2011-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101235434B1 (en) | Piezoelectric ceramic composition and piezoelectric element made by using the same | |
CN103172374B (en) | Piezoelectric ceramics and piezoelectric element | |
CN102757220B (en) | Bi0.5, Na0.5 and TiO3 based ternary-system lead-free piezoelectric ceramic and preparation thereof | |
CN102910902B (en) | BNT-BT-BKT-based perovskite system multielement lead-free piezoelectric ceramic and production method thereof | |
CN109796205B (en) | Bismuth-layer-structured bismuth titanium tantalate high-temperature piezoelectric ceramic material and preparation method thereof | |
CN102531578A (en) | BCT-BZT-BST (Barium calcium titanate-barium zirconate titanate-barium stannate titanate) ternary system lead-free piezoelectric ceramic | |
US20160340255A1 (en) | Oxygen conducting bismuth perovskite material | |
CN102010195B (en) | Zirconium and molybdenum-doped bismuth layer-shaped leadless piezoelectric ceramic material and preparation method thereof | |
CN103102154A (en) | Bi0.5Na0.5TiO3-BaTiO3-BiMg0.5Ti0.5O3 lead-free piezoelectric ceramic material | |
CN101891472B (en) | Perovskite structure high curie temperature leadless piezoelectric ceramal and production method thereof | |
CN102167585B (en) | Multielement-doped bismuth titanate group lead-free piezoceramic material and preparation method thereof | |
CN106220169A (en) | Modified lead nickle niobate lead titanate piezoelectric ceramics and preparation method thereof | |
Li et al. | Middle-low temperature sintering and piezoelectric properties of CuO and Bi2O3 doped PMS-PZT based ceramics for ultrasonic motors | |
CN105198417A (en) | Preparation method of zirconic acid sodium bismuthide lithium cerium doped potassium-sodium niobate based ceramic material | |
CN101302106A (en) | Potassium-sodium niobate-based leadless piezoelectric material and preparation thereof | |
CN102910905A (en) | Low-temperature sintered zirconate-titanate barium calcium based leadless piezoelectric ceramic and preparation method thereof | |
CN103833354A (en) | Solid solution-modified sodium bismuth titanate leadless piezoelectric ceramics and preparation method thereof | |
CN104529447B (en) | Bismuth layered composite structure piezoceramic material and preparation method thereof | |
CN101337814B (en) | Low temperature sintering lithium antimonite doped quinary system piezoelectric ceramics material and method for preparing same | |
CN114455944B (en) | Bismuth layer-structured piezoelectric ceramic material and preparation method thereof | |
CN102180670A (en) | Potassium sodium lithium niobate-potassium sodium bismuth titanate lead-free piezoelectric ceramic and preparation method thereof | |
CN105669193A (en) | K-Na-Li niobate barium titanate-based lead-free piezoelectric ceramic and low-temperature sintering preparation method thereof | |
CN101982441A (en) | Ca2+ doped bismuth laminated piezoceramic material and preparation method thereof | |
KR20210111525A (en) | Lead-free piezoceramics with good mechanical quality factor and high curie temperature and manufacturing method thereof | |
CN103613379A (en) | High performance leadless piezoelectric ceramics and preparation technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |