CN102009944A - Destressing construction technique for non-substrate molding package - Google Patents
Destressing construction technique for non-substrate molding package Download PDFInfo
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- CN102009944A CN102009944A CN2010102739397A CN201010273939A CN102009944A CN 102009944 A CN102009944 A CN 102009944A CN 2010102739397 A CN2010102739397 A CN 2010102739397A CN 201010273939 A CN201010273939 A CN 201010273939A CN 102009944 A CN102009944 A CN 102009944A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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Abstract
The present invention relates to a destressing construction technique for a non-substrate molding package. A method for manufacturing a component including a microstructured or nanostructured components comprises the following steps: providing a substrate (1); coating at least one microstructured or nanostructured component (4,4') on the substrate (1); packaging the coated microstructured or nanostructured component (4,4') with thermal decomposable polymer; and heating the obtained device to a temperature above a temperature, namely, the thermal decomposable polymer (7) is thermally decomposed in the method and is partially converted to gas component at least in the temperature, and additionally the temperature is selected so that other material of the obtained device is not converted to the gas component.
Description
Technical field
The present invention relates to a kind of method that is used to make member, described member comprises (mikro-oder nanostrukturiert) element of little/micro-nano structure.This method comprises the step of the element that encapsulates little/micro-nano structure.The invention still further relates to a kind of member and application thereof that obtains by this method.
Background technology
Sensor is encapsulated in sealing in the shell (molded plastic shell) based on punching press grizzly bar or substrate usually.On the substrate based on copper-plastic casing (copper lead frame), they can be used as embodiment, comprise the shell (shell that does not have lead-in wire) of being with pin (leaded shell) or not having pin.At this, next each sensor or ASIC (special IC) or be encapsulated into overlappingly on the substrate side by side or up and down carry out embedding on substrate.But the shell of novel no substrate also is developed more and morely.A modification of chip encapsulation is called as eWLP (in bury wafer-level packaging).
Under temperature effect, the different heat expansion coefficient by material produces thermal mismatching (mispairing) in molded plastic shell, has therefore caused the distortion (bending), stress induction of whole device (encapsulation) and thereby to the negative influence of sensor signal.At first, the following starting point that is used as mechanical stress of the interface of material composite.In addition, also attempt to overcome this hot mechanical mismatches by the flexible glue of the destressing between the composite surface.In the past, particularly in the inertial sensor of stress sensitive, this just stress characteristics has caused unstressed but the use of expensive so-called preformed shell the most.The preformed shell relates to the prefabricated shell of the spray to cast with closing cap, and at silicones with seal and do not have direct contact between the material.
Therefore, the possible scheme of another kind of mechanical type destressing is, does not have the mechanical connection with molded plastic shell.Yet be not well known that as yet so far how this can construct the free space of member.
DE 10 2,005 041 539 A1 disclose a kind of adhesive film, are used for when the plastic material of semiconductor chip being inserted on the support, for support is equipped with semiconductor chip.For this reason, film has core film and the coating that has adhesive on the outfit side of film at least.Coating has pressure-sensitive and/or temperature sensitive material at its end face, and described material is decomposed under pressure effect and/or heat effect, and isolates the catabolite of gaseous state.
But this relates to the compound solution of substrate when working pressure sensitivity and/or temperature sensitive material.Cavity in the potting compound can not constructed.What therefore be worth expectation is the method that another kind is used to make the member of the element that comprises little/micro-nano structure, in the method, can obtain these cavitys in the potting compound.
Summary of the invention
According to the present invention, advise a kind of method that is used to make the member that comprises little/micro-nano structure element, this method comprises the following steps:
-substrate is provided;
-element of at least one little/micro-nano structure is covered on the substrate;
The element of little/micro-nano structure that the polymeric encapsulate that-usefulness can be thermal decomposited has covered;
-seal the element of little/micro-nano structure of using the polymeric encapsulate that can be thermal decomposited at least in part with sealing material;
-the device that will obtain is heated on such temperature, promptly, for this temperature, the described polymer that can be thermal decomposited be thermal decomposited in the method and small part change into the gaseous state composition, select described temperature in addition like this, so that other material of the device of described acquisition is not converted to the gaseous state composition.
Providing of substrate is provided the first step by the inventive method.The material of substrate can for example be chosen from pottery, metal or high molten plastics group.Metal is for example chosen from 1.4034 and/or 1.4310 stainless steel group at this.
Glued membrane or glue-line can be covered on the substrate.Bed thickness this can be positioned at 〉=0.2 μ m is to the scope of≤200 μ m, preferably at 〉=1 μ m to the scope of≤100 μ m, particularly preferably in 〉=2 μ m to the scope of≤10 μ m.This glue-line or glued membrane can be fixed to the element of little/micro-nano structure to be covered on the substrate and make substrate connect the portion (Moldverbund) from mould behind molding.
In next step, the element of at least one little/micro-nano structure is covered on the substrate.The element of little/micro-nano structure according to the present invention especially inner structure size at the 〉=1nm element to≤100 mu m ranges.Inner structure size referred to herein as the size of the structure in the element, for example groove, contact pin or guide rail.These element application are in microsystems technology or MEMS.
The element of little/micro-nano structure can comprise such zone, and this zone is provided for electrically contacting with the element of other little/micro-nano structure.This zone also can be called as brace (Anschlusspad) or connect contact.In addition, the element of little/micro-nano structure can comprise integrated circuit, sensor element, passive element (passive Bauelemente), ceramic capacitor, resistance or actuator.Described element produces a system then, and described system has independently encapsulation after cutting.
When covering, the subregion at least of the element of little/micro-nano structure and the end face of substrate or be in other layer on the substrate or the end face of film contacts.The element of little/micro-nano structure spacing to each other meets the requirement of member to be made.Can implement the covering of element of little/micro-nano structure with automatic assembler.At this, be used for element with little/micro-nano structure to cover power to be covered on the substrate, depend on the type of thickness and fitting temperature, duration and the element to be assembled of the superiors.In addition, covering also of the element of little/micro-nano structure can obtain simplifying by heated substrates.
As next step, the element of little/micro-nano structure that the polymeric encapsulate that usefulness can be thermal decomposited has covered.At this, the bed thickness of the polymer that can be thermal decomposited can be in 〉=100nm to the scope of≤200 μ m, preferably at 〉=500nm to the scope of≤50 μ m, particularly preferably in 〉=900nm to the scope of≤10 μ m.Described layer can cover as flooding, put glue, impression, centrifugal coating, strong spray (Jetten) or spraying (Spr ü hbelacken) by technology with low cost.And then be tempering process advantageously, wherein for example heating 10 to 30 minutes under 100 ℃ temperature.
Can use serigraphy or mould printing as typography.Equally, the polymer that can be thermal decomposited can be used as fixedly that resist covers.At this, by described method cover the layer can or structured being covered, or covering the back by structuring.Structuring can realize at this in photoetching.
The employed polymer that can be thermal decomposited can have not resolvent temperature stability before temperature reaches 140 ℃.When temperature surpassed 200 ℃, polymer can be for example resolve into CO to small part with having residue
2, CO and H
2
Afterwards, will be sealed with sealing material package at least partly by the element of the little/micro-nano structure of the polymeric encapsulate of energy thermal decomposition.Other title that is used to seal material also can be potting compound, plastic packaging material, casting material, pressure injection-moulded material, pressure injection-moulded material, moulding compound and/or the molding compound sealed.In addition, seal material and can also have filler.These fillers are used for being complementary with material behavior.At this, seal the element that material can be sealed the little/micro-nano structure that gets up with the polymeric encapsulate that can be thermal decomposited on the one hand.Seal material and can also directly seal the element of little/micro-nano structure.Sealing material can for example choose from epoxy resin, polyacrylate, polyformaldehyde and/or silicones group.
Advantageously, the employed material of sealing has low creepage characteristic, high homogeneity, low-refraction, low-shrinkage and/or low thermal conductivity.In addition, the employed material of sealing also has such thermal coefficient of expansion, and it can be distinguished to factor 10 with the value of the thermal coefficient of expansion of silicones, and the employed material of sealing can have high elastic modulus and Gao Bo alternating temperature degree equally especially.
In framework of the present invention, notion " seal " comprise at this plastic injection-mouldedly seal, pressure injection-mouldedly seal, embedding and make molding (method of molding), the transfermolding (transfer moudling) of technical term in English and the technology of injection molding (jet moulding), liquid molding (liquid molding method), compression molding (compression molding) and (sheet molding method).
With sealing after the material package envelope, then the device that obtains is heated.At this, the device of acquisition refers to the element of having sealed that obtains from method step before.This step is also referred to as the back and solidifies (PMC) step.In the present invention, use the required PMC step of moulding compound, so that decompose the polymer that can be thermal decomposited that is covered.Duration and temperature depend on the bed thickness of the polymer that is covered at this.Therefore during heating realize the sclerosis of moulding compound and finally crosslinked, realized the connection that takes off between the interface in addition.
Be heated to that a polymer that enables to be thermal decomposited is thermal decomposited and change into the temperature of gaseous state composition to small part in described method, and wherein also described temperature is chosen as, make other material of the device of acquisition can not change into the gaseous state composition.
Under this temperature, polymer appears in the part does not at least have remaining decomposition, and other material can be not impaired.Other material is positioned at the assembly of member at this, and the polymer that can be thermal decomposited is not formed or comprised to described assembly by the polymer that can be thermal decomposited.At this, other assembly for example can not be out of shape under decomposition temperature.Under selected temperature, the sclerosis of material and finally crosslinked has preferably also taken place to seal.
If there is a kind of member, it has the system that comprises little/micro-nano structure element with a plurality of, and these systems can be separated by sawing so.
By by method of the present invention, the element of little/micro-nano structure can with surround sealing material and separating of they, and in another step, come off from support.If element connects up on their bottom surface, they can be bearing on the flexible new route to damping so.In addition, can realize producing the dwindling of mechanical boundaries face of voltage.Thermal mismatching is reduced, thereby the thing followed is the signal drift of related sensor.
Be that by one of the inventive method extra advantage the eWLP technology that this method and being used to of being about to emerge do not have the substrate molded packages is consistent, it need not to change whole technology and just can use.
By in a kind of form of implementation of the inventive method, the temperature during heating is positioned at 〉=140 ℃ to≤280 ℃ scope, preferably in 〉=180 ℃ to≤250 ℃ scope and particularly preferably in 〉=200 ℃ to≤240 ℃ the scope.Described temperature range had proved advantageous particularly already, because this can cause sealing the enough fast reinforcing of material simultaneously and cause being thermal decomposited the enough fast decomposition of polymer.
By in the another kind of form of implementation of the inventive method, cover at element before the end face of substrate little/micro-nano structure, the film that will comprise conductive region is applied to described the covering on the set side that be of substrate.After possible structuring, this film can be with their conductive region as the basis of rewiring.Can set up and contact with the metallization operation by the laser drill operation.
In addition, can set up by the laser drill operation and pass the film that comprises conductive region and connect point (Durchkontakt) to the element of little/micro-nano structure.For example, with interim support after separating, the copper film of resinizing (RCC film) can be connected with each other the element of little/micro-nano structure.This connection still can be electroplated ground and be strengthened.According to the present invention, film is made from a variety of materials at this, and in these materials, wherein a kind of component is placed in the another kind of component.At this, at least a component comprises a kind of conductive material.
After finishing rewiring, the element of little/micro-nano structure can be supported by no substrate ground.Can reach the effect of system's damping thus.
The film that the comprises conductive region copper film (RCC film) of preferably resinizing.Rewiring can adapt with damping and flexible characteristic for this reason, and element can be optimized with regard to required vibration material.An advantage is that system vibration can take off coupling with the installation site of member, and therefore causes the fixing of sensor capacitance zone.
In pressing the another kind of form of implementation of the inventive method, the polymer that can be thermal decomposited is a kind of thermoplastic.Use the advantage of thermoplastic to be, in another method step, should thermoplastic is softening once more.At this, thermoplastic polymer can be selected from polycyclic olefin, acrylonitrile-butadiene-styrene copolymer, polyamide, poly-lactic acid ester, polymethyl methacrylate, Merlon, PETG (PET), polyethylene, polypropylene, polystyrene, polyether-ketone and/or Corvic (PVC).
The polymer that can enable to be thermal decomposited also can be by chemical breakdown in addition.
In pressing the another kind of form of implementation of the inventive method, the element of at least one little/micro-nano structure hides with covering cover earlier with before the polymeric encapsulate that can be thermal decomposited.By this covering, at the element of little/micro-nano structure with next with the contact of the element that does not have little/micro-nano structure between the sealing of the polymeric encapsulate that can be thermal decomposited and the polymer that can be thermal decomposited.Cover cover as used herein and can comprise a kind of net of scraping of covering cover that is used to comprise serigraphy and/or profiling printing.The advantage of this form of implementation is, does not need can reserve recess with the element of the polymeric encapsulate that can be thermal decomposited, thereby can save material.
In pressing the another kind of form of implementation of the inventive method, the element of little/micro-nano structure is chosen from MEMS (MEMS), application-specific IC (ASIC) and/or set of sensor elements.In pressing method of the present invention, described element especially is benefited from sealing taking off the coupling (Entkopplung) of material, because under the influence of mechanical stress, they are subject to the change of their functions especially, for example the influence of the change of their sensor signal.At this, sensor element can be the part of acceleration sensor, rotational-rate sensor (Drehratensensoren), pressure sensor, Magnetic Sensor, Hall element, mass flow sensor, gas sensor, optical pickocff and/or multi-chip modules.
In pressing the another kind of form of implementation of the inventive method, the element of little/micro-nano structure is a semiconductor element.At this, described semiconductor element can be from MEMS, ASIC, active pixel sensor, ccd image (CCD) sensor, contact-type image sensor, Diac (bidirectional trigger diode), digital image sensor, electron multiplication CCD, photo thyristor, gate array, gate level turn-off thyristor, semiconductor relay, semiconductor memory, integrated level (Integrationsgrad), microprocessor, the neuromorphic chip, photoelectrical coupler, position sensitive detector, solar cell, operating amplifier with current feedback, IGCT, the IGCT adjuster, four utmost point IGCTs, IGCT tower (Thyristorturm), laser distance sensor, pressure sensor, acceleration sensor, temperature sensor, rotational-rate sensor, mass flow sensor, Magnetic Sensor, gas sensor, Hall element, humidity sensor, select in trench technique (Trench-Technik) and/or the video RAM.What also be suitable at this is that the stability of element function improves by hot decoupling.
Possible in addition is, with seal material finish seal after, by drilling operating or special mould, for example die produces cavity.At this, described cavity can extend to the polymer that can be thermal decomposited always, and described polymeric encapsulate is little/element of micro-nano structure.Possible in addition is could produce cavity after the polymer unwinds that can be thermal decomposited.At this, cavity boring is passed and is sealed material in the gap of leading to the element that surrounds little/micro-nano structure.
Another technical theme of the present invention relates to a kind of member, and it is by the element of sealing little/micro-nano structure that material package encloses that obtains by method of the present invention, comprise to be hardened, wherein, and in the local at least gap that forms between the material of sealing of the element of little/micro-nano structure and sclerosis.Advantage, especially hot decoupling was illustrated in by method of the present invention already.Therefore repeat to be quoted for avoiding.
Should be mentioned that already, realized the element of little/micro-nano structure that interface connects and the local decoupling of sealing material.According to the present invention, sealing material especially can be potting compound and/or molding compound.Therefore, the element of little/micro-nano structure can be connected with new route damping, flexible on damping supporting ground, thereby the system vibration of destruction can be compensated on the installation site of member.
Element and sclerosis seal spacing between the material, that is the width in gap, can be in 〉=100nm to the scope of≤200 μ m, preferably at 〉=500nm to the scope of≤50 μ m, particularly preferably in 〉=900nm to the scope of≤10 μ m.
In a kind of form of implementation, also comprise cavity in outside to the gap by member of the present invention.Cavity is preferably by sealing material until arriving the gap.Optionally, cavity additionally extends by the film that comprises conductive region.Can obtain to be used for the element of unstressed encapsulation thus, as the medium channel of sensor.At this, sensor can be pressure sensor, fluid sensor and/or chemical sensor.Advantageously, can carry out the UNICOM between gap and the external agency thus, wherein this preferably can realize by fluid communication.
The invention still further relates to the purposes by member of the present invention, it is used to pressure sensor, acceleration sensor, temperature sensor, rotational-rate sensor, mass flow sensor, Magnetic Sensor, gas sensor, Hall element and/or humidity sensor.
Description of drawings
Describe the present invention in detail by the specific embodiment of described method and with reference to following accompanying drawing, but be not limited thereto.In the accompanying drawing:
Providing of the substrate that has the copper film of resinizing is provided Fig. 1;
Fig. 2 shows covering of the polymer that can be thermal decomposited;
Fig. 3 shows the polymer situation afterwards that can be thermal decomposited that covers;
Fig. 4 shows to utilize and seals sealing that material carries out;
Fig. 5 shows the situation after the polymer unwinds that can be thermal decomposited;
Fig. 6 shows the member that has made;
Fig. 7 shows a kind of form of implementation by member of the present invention.
The specific embodiment
Fig. 1 shows the substrate 1 that has adhesive film 2, scribbles the copper film 3 of resinizing on the adhesive film 2.Shown in enlarged drawing, the copper film 3 of resinizing comprises epoxy layer 3a and copper layer 3b at this.The epoxy layer 3a that is included in the copper film 3 of resinizing is positioned on the copper layer 3b, and forms the set side of covering of element in this case.
Fig. 2 shows the step that covers the polymer 7 that can be thermal decomposited.On the substrate 1 that has the copper film 3 of resinizing, with the element 4,4 of little/micro-nano structure ' cover on the epoxy layer 3a of the copper film 3 of resinizing.Element 4,4 ' have attaches troops to a unit in their contact site 5,5 ', these contacts site are positioned at epoxy layer 3a inside.In this embodiment, element 4 is MEMS chips, element 4 ' and be asic chip.Asic chip 4 ' quilt is covered cover 6 and is hidden.The polymer 7 that can be thermal decomposited covers on the component arrangement by scraper 8.At this, polymer 7 lining is set to MEMS chip 4 and covers on the cover 6 and be covered in MEMS chip 4 and cover in the gap between the cover 6.Cover cover 6 prevent polymer 7 seal asic chip 4 ', thereby only realized sealing of the MEMS chip 4 that exposes.
Remove cover the cover 6 after, the device as shown in Figure 3.Can see that at this layer of the polymer 7 that can be thermal decomposited evenly distributes around MEMS chip 4.Otherwise, asic chip 4 ' be not aggregated thing 7 to seal.
Embedding device shown in Figure 3 in next step.Fig. 4 show seal material 9 how directly to contact asic chip 4 ', otherwise, at MEMS chip 4 with seal the polymer 7 that material has one deck to be thermal decomposited between 9.And then can be heated on the temperature that polymer 7 can be thermal decomposited.
Fig. 5 shows the state after the heating.A consequence of heating is exactly the reinforcing or the sclerosis of sealing material 9.In addition, the decomposition by the polymer that can be thermal decomposited produces gap 10, does not therefore have contact at MEMS chip 4 and sealing between the material 9 of having hardened.
As final step, carry out rewiring.At this, a member after the rewiring has been shown among Fig. 6.For carrying out rewiring, at first substrate 1 and the adhesive film 2 that belongs to substrate must be removed, thereby the copper film 3 of resinizing of covering element 4,4 ' bottom surface is come out.And then the laser drill operation of the epoxy layer 3a and the copper layer 3b of the copper film 3 of resinizing is passed in enforcement.At this, obtain with connecting terminal 5,5 ' connect point (Durchkontakt).And then a little provide metallization to connecting.At this, realize the enhancing (galvanische of the electric aspect of copper layer 3b
).In addition, copper layer 3b can be equipped with solder mask 11, and wherein, this solder mask can also be extraly by structuring.After rewiring, can come member is carried out scribing by sawing, described sawing is shown in broken lines in the accompanying drawings.
Fig. 7 shows the another kind of form of implementation by member of the present invention.At this, exist one to pass the cavity 12 of sealing material 9.Cavity 12 arrives gap 10, described gap encircles MEMS chip 4 at this.
Claims (10)
1. a method that is used to make the member of the element (4,4 ') that comprises little/micro-nano structure comprises the following steps:
-substrate (1) is provided;
-element (4,4 ') of at least one little/micro-nano structure is covered on the described substrate (1);
-use the polymer (7) that can be thermal decomposited to seal the element (4,4 ') of the little/micro-nano structure that has covered;
-seal the element (4,4 ') of little/micro-nano structure of using the polymeric encapsulate that can be thermal decomposited at least in part with sealing material (9);
-the device that will obtain is heated on such temperature, promptly, for this temperature, the described polymer that can be thermal decomposited (7) is thermal decomposited and changes at least in part the gaseous state composition in the method, select described temperature in addition like this, so that other material of the device of described acquisition is not converted to the gaseous state composition.
2. by the described method of claim 1, wherein, during heating temperature be in 〉=140 ℃ to≤280 ℃ scope in.
3. by the described method of claim 1, wherein, with described little/film (3) that the element (4,4 ') of micro-nano structure will comprise conductive region (3b) before covering on the end face of described substrate (1) is applied to described the covering on the set side that be of described substrate (1).
4. by the described method of claim 1, wherein, the described polymer that can be thermal decomposited (7) is a thermoplastic.
5. by the described method of claim 1, wherein, the element of at least one little/micro-nano structure (4,4 ') hid with covering cover (6) before sealing with the described polymer that can be thermal decomposited (7).
6. by the described method of claim 1, wherein, described little/element (4,4 ') of micro-nano structure chooses from MEMS, application-specific IC and/or set of sensor elements.
7. by the described method of claim 1, wherein, described little/element (4,4 ') of micro-nano structure is a semiconductor element.
8. one kind is passed through to press the member that the described method of claim 1 obtains, the element (4 that comprises the little/micro-nano structure of sealing material (9) encirclement that has been hardened, 4 '), wherein, described little/element (4,4 ') of micro-nano structure and described hardened seal the local at least gap (10) that forms between the material (9).
9. by the described member of claim 8, also comprise the cavity (12) that stretches to from the outside in the described gap (10).
10. by the purposes of the described member of claim 8, it is used for pressure sensor, acceleration sensor, temperature sensor, rotational-rate sensor, mass flow sensor, Magnetic Sensor, gas sensor, Hall element and/or humidity sensor.
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DE102009029199.7 | 2009-09-04 | ||
DE102009029199A DE102009029199A1 (en) | 2009-09-04 | 2009-09-04 | Component parts manufacturing method for e.g. pressure sensors, involves selecting temperature for heating microstructured or nanostructured components such that materials of components are not converted into gaseous component parts |
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Cited By (1)
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CN109346415A (en) * | 2018-09-20 | 2019-02-15 | 江苏长电科技股份有限公司 | The packaging method and sealed in unit that encapsulating structure is selectively encapsulated |
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DE102011108981B4 (en) | 2011-08-01 | 2016-02-18 | Gottfried Wilhelm Leibniz Universität Hannover | Structural device with a component, device for application of the device, method for producing the structural device and method for application of the device |
DE102017203381A1 (en) * | 2017-03-02 | 2018-04-05 | Robert Bosch Gmbh | Microelectronic component arrangement and corresponding manufacturing method |
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CN101094804A (en) * | 2004-03-15 | 2007-12-26 | 佐治亚技术研究公司 | Packaging for micro electro-mechanical systems and methods of fabricating thereof |
DE102005041539B4 (en) * | 2005-08-31 | 2008-04-10 | Infineon Technologies Ag | Process for producing a disc-shaped and / or plate-shaped composite body |
US20080083957A1 (en) * | 2006-10-05 | 2008-04-10 | Wen-Chieh Wei | Micro-electromechanical system package |
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US20050194685A1 (en) * | 2004-03-04 | 2005-09-08 | Kurt Weiblen | Method for mounting semiconductor chips and corresponding semiconductor chip system |
CN101094804A (en) * | 2004-03-15 | 2007-12-26 | 佐治亚技术研究公司 | Packaging for micro electro-mechanical systems and methods of fabricating thereof |
DE102005041539B4 (en) * | 2005-08-31 | 2008-04-10 | Infineon Technologies Ag | Process for producing a disc-shaped and / or plate-shaped composite body |
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