CN101996869A - Preparation method and preparation device for poly-silicon thin film - Google Patents
Preparation method and preparation device for poly-silicon thin film Download PDFInfo
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- CN101996869A CN101996869A CN2009100918703A CN200910091870A CN101996869A CN 101996869 A CN101996869 A CN 101996869A CN 2009100918703 A CN2009100918703 A CN 2009100918703A CN 200910091870 A CN200910091870 A CN 200910091870A CN 101996869 A CN101996869 A CN 101996869A
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Abstract
The invention discloses a preparation method and a preparation device for a poly-silicon thin film, which are used for controlling the stress generated by the poly-silicon thin film into the range of not influencing the base material structure, wherein the method of the invention comprises the following steps: according to the preset thickness of the poly-silicon thin film prepared as required, determining the depositing time; introducing silane into a container in which the base materials are placed, wherein the temperature is not higher than 575DEG C; heating the silane to generate amorphous silicon, wherein the heating time of the silane is consistent with the determined deposited time; and heating the amorphous silicon to higher than 575DEG C to generate polycrystalline silicon.
Description
Technical field
The present invention relates to the semiconductor device processing technology field, relate in particular to a kind of manufacture method and device of polysilicon membrane.
Background technology
Polysilicon is a kind of pure silicon of being made up of the little monocrystalline silicon crystal grain of multiple different crystallization directions, itself is the good insulation performance body, can be used as resistance in components and parts uses, and follow-uply after overdoping and heat treatment, can make it have good electric conductivity to polysilicon, using thereby can be used as electric conducting material, is exactly polysilicon after overdoping and heat treatment such as the electric conducting material of gate surface.
In the prior art, general using low pressure chemical vapor phase deposition (LPCVD) equipment generates the polysilicon membrane of device surface, particularly, the schematic diagram that generates polysilicon membrane at device surface as shown in Figure 1, the picture in left side is not for generating the device surface schematic diagram of polysilicon membrane as yet among this Fig. 1, and the picture on right side is the device surface schematic diagram that has generated polysilicon membrane among this Fig. 1, wherein, the dash area that is decorated with oblique line in the Image to right is a polysilicon membrane, the part that is not decorated with oblique line then is the device top layer, and this process shown in Figure 1 is based on as shown in the formula the silane (SiH shown in (1)
4) mode of decomposes:
In the generative process of polysilicon membrane, LPCVD equipment is at heating SiH
4The time employed temperature (during this heating use temperature also can be described as depositing temperature) difference can cause the crystal structure of the polysilicon membrane that generates to produce very big-difference, such as, if depositing temperature is lower than 575 ℃, what then obtain according to above-mentioned chemical formula is not polysilicon just, but amorphous silicon, even this amorphous silicon also can not have the material of electric conductivity for it is mixed, if and depositing temperature is higher than 575 ℃, be only polysilicon commonly used in the electronics industry according to what above-mentioned chemical formula generated so, therefore, in the prior art, thus generally adopt pyrolysis silane more than 600 ℃ to generate the mode of polysilicon membrane.
Shown in Fig. 1 Image to right, the polysilicon that is positioned at device surface is a thin film, (device that polysilicon membrane covered also can be described as ground for the coefficient of expansion of polysilicon and device because the polysilicon membrane that forms under higher temperature is understood after cooling, this ground generally is a wafer) the coefficient of expansion inconsistent, thereby the shrinkage degree that can produce film and wafer is inconsistent, the deformation extent of film and wafer is inconsistent, this just makes and can form bigger stress between film and the wafer, the existence meeting of this stress causes bigger influence to wafer, especially the wafer that those is had epitaxial loayer, because epitaxial loayer itself also is a kind of film, stress is bigger, if also further deposit the bigger polysilicon membrane of stress in the above, then might destroy the surface texture of wafer, form defective (dislocation and slight crackle etc.), even can cause wafer cracked.
In sum, may be based on the stress that polysilicon membrane produces after cooling to the harmful effect of wafer generation, press for the manufacturing process that a kind of polysilicon membrane is provided in the prior art, can not influence in the scope of ground structure with the Stress Control that polysilicon membrane is produced.
Summary of the invention
The embodiment of the invention provides a kind of manufacture method and device of polysilicon membrane, can not influence in the scope of ground structure in order to the Stress Control that polysilicon membrane is produced.
For this reason, the embodiment of the invention is by the following technical solutions:
A kind of manufacture method of polysilicon membrane comprises: the preset thickness of the polysilicon membrane of Zhi Zaoing as required, determine sedimentation time; Feed silane in being placed with the container of ground, and adopting and not to be higher than 575 ℃ temperature, described silane is heated the generation amorphous silicon, wherein, the time span that described silane is heated is consistent with described definite sedimentation time; Described amorphous silicon is heated to more than 575 ℃, generates polysilicon.
Preferably, the heating rate according to default is heated to described amorphous silicon more than 575 ℃, generates polysilicon.
Preferably, described amorphous silicon is heated to more than 575 ℃, generate polysilicon after, also comprise: the ground that will be attached with the polysilicon of described generation takes out from described container, and the ground that will be attached with the polysilicon of described generation at room temperature cools off.
Preferably, before the ground that is attached with the polysilicon of described generation taken out from described container, also comprise:, the polysilicon of described generation is cooled to 560 ℃ according to default rate of temperature fall, and in default stabilization time section, the temperature that keeps described polysilicon is 560 ℃.
Preferably, said method can also comprise: described amorphous silicon is being heated to more than 575 ℃, when generating polysilicon, is feeding the gas that can not produce chemical reaction under the temperature conditions more than 575 ℃ with silicon in described container.
A kind of manufacturing installation of polysilicon membrane comprises: determining unit, and the preset thickness of the polysilicon membrane that is used for making is as required determined sedimentation time; The amorphous silicon generation unit, be used for feeding silane, and adopt and not to be higher than 575 ℃ temperature, described silane is heated the generation amorphous silicon at the container that is placed with ground, wherein, the sedimentation time determined of the time span that described silane is heated and determining unit is consistent; The polysilicon generation unit is used for the amorphous silicon that the amorphous silicon generation unit generates is heated to more than 575 ℃, generates polysilicon.
Preferably, described polysilicon generation unit is heated to described amorphous silicon more than 575 ℃ according to default heating rate, generates polysilicon.
Preferably, this device can also comprise the air cooling unit, the ground that is attached with the polysilicon that the polysilicon generation unit generates is taken out from described container, and the ground that will be attached with the polysilicon of described generation at room temperature cools off.
Preferably, this device can also comprise the temperature holding unit, be used for before the ground that the air cooling unit will be attached with the polysilicon of described generation takes out from described container, according to default rate of temperature fall, the polysilicon of described generation is cooled to 560 ℃, and in default stabilization time section, the temperature that keeps described polysilicon is 560 ℃.
Preferably, this device can also comprise that gas feeds the unit, is used for when the polysilicon generation unit generates polysilicon, feeds the gas that can not produce chemical reaction under the temperature conditions more than 575 ℃ with silicon in described container.
The embodiment of the invention is not higher than 575 ℃ depositing temperature by at first adopting, silane is heated the generation amorphous silicon, and then the amorphous silicon that generates is heated to more than 575 ℃, make it to change into polysilicon, because this scheme that the embodiment of the invention provides is carried out heating and decomposition to silane earlier under lower temperature, and then the amorphous silicon that decomposition obtains is heated to higher temperature makes it to change into polysilicon, thereby make the lattice of polysilicon of generation less, because the crystal silicon of polysilicon size is relevant with stress intensity, the big more stress of lattice is big more, therefore, the scheme that adopts the embodiment of the invention to provide can make polysilicon membrane also corresponding less with respect to the stress of ground.
Description of drawings
Fig. 1 is the process schematic diagram that generates polysilicon membrane in the prior art at device surface;
The specific implementation flow chart of a kind of method for manufacturing polycrystalline silicon thin film that Fig. 2 a provides for the embodiment of the invention;
Fig. 2 b feeds silane gas in the embodiment of the invention in the boiler tube that is placed with wafer, and the schematic diagram that silane gas is heated;
Fig. 2 c is the concrete schematic diagram of wafer;
The method for manufacturing polycrystalline silicon thin film application flow schematic diagram in practice that Fig. 3 a provides for the embodiment of the invention;
Fig. 3 b is the schematic diagram of the manufacture process institute serviceability temperature of polysilicon membrane in the embodiment of the invention;
The concrete structure schematic diagram of a kind of polysilicon membrane manufacturing installation that Fig. 4 provides for the embodiment of the invention.
Embodiment
The method for manufacturing polycrystalline silicon thin film that the embodiment of the invention provides generates polysilicon by adopting two-step method, that is: at first adopt not to be higher than 575 ℃ depositing temperature, and silane is heated the generation amorphous silicon; Then, again the amorphous silicon that generates is heated to more than 575 ℃, make it to change into polysilicon, thereby in the prior art silane being heated to higher temperature relatively makes it decompose the scheme that generates polysilicon, this scheme that adopts the embodiment of the invention to provide can form amorphous silicon membrane earlier under lower temperature, and then amorphous silicon membrane heated make it to be converted to polysilicon membrane, make that the lattice of the polysilicon that generates is less, thereby polysilicon membrane is also corresponding less for the stress of ground.
Be explained in detail to the main realization principle of embodiment of the invention technical scheme, embodiment and to the beneficial effect that should be able to reach below in conjunction with each accompanying drawing.
Shown in Fig. 2 a, the idiographic flow schematic diagram of the manufacture method of a kind of polysilicon membrane that provides for the embodiment of the invention, this method mainly may further comprise the steps:
Need to prove, after process above-mentioned steps 21～23, polysilicon membrane in the still hot environment that generates, in order to make the polysilicon membrane cool to room temperature, in embodiments of the present invention, above-mentioned steps 23 can also further be taken out the ground that is attached with polysilicon membrane later from container, and the step cooled off of the ground that will be attached with polysilicon membrane at room temperature, because in actual applications, this container is generally boiler tube, and ground is generally wafer, therefore, this step also can abbreviate as the wafer that the is attached with polysilicon membrane air cooling of coming out of the stove, particularly, can be in the embodiment of the invention according to default rate of temperature fall, the polysilicon that generates is cooled to a certain higher temperature below 575 ℃, and after keeping the temperature of polysilicon to be in this higher temperature in the section default stabilization time, the ground that just will the be attached with polysilicon membrane air cooling of coming out of the stove, such treatment process can cool off the polysilicon that generates with less rate of temperature fall, and make the polysilicon that cools to uniform temperature that be arranged one period stabilization time, thereby can avoid the polysilicon under the high temperature is directly cooled to room temperature and causes its internal temperature inhomogeneous, and further produce the inhomogeneous problems such as damage that cause of internal stress.
In addition, amorphous silicon is being continued to be heated to more than 575 ℃, when making it change polysilicon into, can also in the boiler tube shown in Fig. 2 b, feed the gas that under the temperature conditions more than 575 ℃, can not produce chemical reaction with silicon, such as, can feed nitrogen N
2Deng inert gas, feed this gas and can the pipeline that feed silane be cooled off on the one hand, overheated to avoid pipeline; On the other hand, can impel outside other gas amount discharge containers in the container, in order to avoid other gases and polysilicon produce reaction by feeding this gas.
Particularly, below this method process in actual applications of providing by the embodiment of the invention be example, this method is elaborated, the schematic diagram of this process please refer to Fig. 3 a, mainly may further comprise the steps:
Step 31, the preset thickness of the polysilicon membrane of Zhi Zaoing is as required determined sedimentation time that silane is heated, such as, according to preset thickness, determine and need heat 30 minutes silane;
Step 32 shown in Fig. 2 b, feeds silane gas in the boiler tube of having placed wafer under 560 ℃ temperature, and the silane gas of feeding was heated 30 minutes, decomposes to generate amorphous silicon;
Step 33 according to the heating rate of 3 ℃/min, heats the amorphous silicon that generates, and makes its temperature rise to 625 ℃, thereby makes amorphous silicon change polysilicon into, and in temperature-rise period, feed N in boiler tube
2, need to prove that be heated evenly in order to make amorphous silicon, the heating rate that uses in this step 33 is difficult for too high, generally can establish this speed in the scope of 2 ℃/min～5 ℃/min;
Step 34, rate of temperature fall according to 3 ℃/min, the polysilicon that generates is lowered the temperature, make its temperature reduce to 560 ℃, and after its temperature is reduced to 560 ℃, in 20 minutes, keep the temperature of polysilicon to be 560 ℃ always, in embodiments of the present invention, at the schematic diagram of the manufacture process institute serviceability temperature of polysilicon membrane shown in Fig. 3 b, as can be seen from the figure corresponding different products that generate under the condition of different temperatures, similarly, in order to make polysilicon keep the temperature contrast of each several part not too large in temperature-fall period, the rate of temperature fall that uses in this step 34 is difficult for too high, generally can establish this speed also in the scope of 2 ℃/min～5 ℃/min;
Step 35 is sent the wafer that is attached with polysilicon membrane from boiler tube, carry out air cooling.
Evidence, the method for manufacturing polycrystalline silicon thin film that adopts the embodiment of the invention to provide is not higher than 575 ℃ depositing temperature by at first adopting, and silane is heated the generation amorphous silicon; Then, again the amorphous silicon that generates is heated to more than 575 ℃, make it to change into polysilicon, thereby can make the lattice of polysilicon of generation less, so just make polysilicon membrane also corresponding less for the stress of ground, in addition, the such scheme that the embodiment of the invention provides is by feeding under the hot conditions not the gas with the polysilicon reaction in heating process, can be so that the polysilicon membrane that generates be purer, further, the embodiment of the invention heats amorphous silicon by adopting predetermined heating rate, and the polysilicon that generates is lowered the temperature by predetermined rate of temperature fall, can make the variations in temperature of using in the polysilicon manufacture process slow, thereby make the polysilicon structure of generation more firm, thereby can not produce the uneven fault of construction that causes of internal stress because being heated inequality.
Correspondingly, the embodiment of the invention also provides a kind of polysilicon membrane manufacturing installation, its concrete structure schematic diagram as shown in Figure 4, this device comprises following functional unit:
Determining unit 41, the preset thickness of the polysilicon membrane that is used for making is as required determined sedimentation time;
Amorphous silicon generation unit 42, be used for feeding silane, and adopt and not to be higher than 575 ℃ depositing temperature, described silane is heated the generation amorphous silicon at the container that is placed with ground, wherein, the sedimentation time determined of the time span that described silane is heated and determining unit 41 is consistent;
In addition, this device that the embodiment of the invention provides can also comprise air cooling unit 44, the ground that is used for being attached with the polysilicon that the polysilicon generation unit generates takes out from described container, and the ground that will be attached with the polysilicon of described generation at room temperature cools off, thus make polysilicon membrane and attached to the greenhouse cooling of ground to consistent with room temperature.
Further, cause its internal temperature inhomogeneous and produce problems such as internal flaw even damage for fear of the polysilicon under the high temperature directly being cooled to room temperature, this device that the embodiment of the invention provides can further include temperature holding unit 45, be used for before the ground that air cooling unit 44 will be attached with the polysilicon of described generation is come out of the stove air cooling, according to default rate of temperature fall, the polysilicon that generates is cooled to 560 ℃, and in default stabilization time section, keeping the temperature of polysilicon is 560 ℃.
Preferably, the embodiment of the invention can also comprise that gas feeds unit 46, be used for when polysilicon generation unit 43 generates polysilicon, in container, feed the gas that under the temperature conditions more than 575 ℃, can not produce chemical reaction with silicon, can the pipeline that feed silane be cooled off so on the one hand, overheated to avoid pipeline; On the other hand, can also impel outside other gas amount discharge containers in the container, in order to avoid other gases and polysilicon produce reaction.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the manufacture method of a polysilicon membrane is characterized in that, comprising:
The preset thickness of the polysilicon membrane of Zhi Zaoing is determined sedimentation time as required;
Feed silane in being placed with the container of ground, and adopting and not to be higher than 575 ℃ temperature, described silane is heated the generation amorphous silicon, wherein, the time span that described silane is heated is consistent with described definite sedimentation time;
Described amorphous silicon is heated to more than 575 ℃, generates polysilicon.
2. the method for claim 1 is characterized in that, the heating rate according to default is heated to described amorphous silicon more than 575 ℃, generates polysilicon.
3. the method for claim 1 is characterized in that, described amorphous silicon is heated to more than 575 ℃, behind the generation polysilicon, also comprises:
The ground that is attached with the polysilicon of described generation is taken out from described container, and the ground that will be attached with the polysilicon of described generation at room temperature cools off.
4. method as claimed in claim 3 is characterized in that, before the ground that is attached with the polysilicon of described generation is taken out from described container, also comprises:
According to default rate of temperature fall, the polysilicon of described generation is cooled to 560 ℃, and in default stabilization time section, the temperature that keeps described polysilicon is 560 ℃.
5. as the described method of 1～4 arbitrary claim, it is characterized in that, also comprise:
Described amorphous silicon is being heated to more than 575 ℃, when generating polysilicon, in described container, is feeding the gas that under the temperature conditions more than 575 ℃, can not produce chemical reaction with silicon.
6. the manufacturing installation of a polysilicon membrane is characterized in that, comprising:
Determining unit, the preset thickness of the polysilicon membrane that is used for making is as required determined sedimentation time;
The amorphous silicon generation unit, be used for feeding silane, and adopt and not to be higher than 575 ℃ temperature, described silane is heated the generation amorphous silicon at the container that is placed with ground, wherein, the sedimentation time determined of the time span that described silane is heated and determining unit is consistent;
The polysilicon generation unit is used for the amorphous silicon that the amorphous silicon generation unit generates is heated to more than 575 ℃, generates polysilicon.
7. device as claimed in claim 6 is characterized in that, described polysilicon generation unit is heated to described amorphous silicon more than 575 ℃ according to default heating rate, generates polysilicon.
8. device as claimed in claim 6 is characterized in that, also comprises:
The air cooling unit takes out the ground that is attached with the polysilicon that the polysilicon generation unit generates from described container, and the ground that will be attached with the polysilicon of described generation at room temperature cools off.
9. device as claimed in claim 8 is characterized in that, also comprises:
The temperature holding unit, be used for before the ground that the air cooling unit will be attached with the polysilicon of described generation takes out from described container,, the polysilicon of described generation cooled to 560 ℃ according to default rate of temperature fall, and in default stabilization time section, the temperature that keeps described polysilicon is 560 ℃.
10. as the described device of 6～9 arbitrary claims, it is characterized in that, also comprise:
Gas feeds the unit, is used for when the polysilicon generation unit generates polysilicon, feeds the gas that can not produce chemical reaction under the temperature conditions more than 575 ℃ with silicon in described container.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102345166A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Method for reducing warp of polycrystalline silicon wafer |
| CN103779192A (en) * | 2012-10-23 | 2014-05-07 | 联胜（中国）科技有限公司 | Method for forming polycrystalline silicon thin film and method for forming thin film transistor |
| WO2015070464A1 (en) * | 2013-11-12 | 2015-05-21 | 深圳市华星光电技术有限公司 | Polysilicon fabrication method for improving uniformity of polysilicon layer |
| CN105612603A (en) * | 2013-10-21 | 2016-05-25 | 株式会社Eugene科技 | Method and apparatus for depositing amorphous silicon film |
| CN108281350A (en) * | 2018-01-23 | 2018-07-13 | 武汉华星光电半导体显示技术有限公司 | The production method of solid-phase crystallization method and low temperature polycrystalline silicon TFT substrate |
| CN110767774A (en) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Method for manufacturing TOPCon solar cell and method and equipment for crystallizing amorphous silicon of TOPCon solar cell |
| CN111628047A (en) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102345166A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Method for reducing warp of polycrystalline silicon wafer |
| CN103779192A (en) * | 2012-10-23 | 2014-05-07 | 联胜（中国）科技有限公司 | Method for forming polycrystalline silicon thin film and method for forming thin film transistor |
| CN105612603B (en) * | 2013-10-21 | 2019-05-03 | 株式会社Eugene科技 | The evaporation coating method and evaporation coating device of amorphous silicon film |
| CN105612603A (en) * | 2013-10-21 | 2016-05-25 | 株式会社Eugene科技 | Method and apparatus for depositing amorphous silicon film |
| US9530644B2 (en) | 2013-11-12 | 2016-12-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Polysilicon manufacturing method that enhances homogeneity of polysilicon layer |
| WO2015070464A1 (en) * | 2013-11-12 | 2015-05-21 | 深圳市华星光电技术有限公司 | Polysilicon fabrication method for improving uniformity of polysilicon layer |
| CN108281350A (en) * | 2018-01-23 | 2018-07-13 | 武汉华星光电半导体显示技术有限公司 | The production method of solid-phase crystallization method and low temperature polycrystalline silicon TFT substrate |
| CN108281350B (en) * | 2018-01-23 | 2020-09-01 | 武汉华星光电半导体显示技术有限公司 | Solid-phase crystallization method and manufacturing method of low-temperature polycrystalline silicon TFT substrate |
| CN110767774A (en) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Method for manufacturing TOPCon solar cell and method and equipment for crystallizing amorphous silicon of TOPCon solar cell |
| CN111628047A (en) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
| CN111628047B (en) * | 2020-06-01 | 2023-02-28 | 常州顺风太阳能科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
| CN113623529A (en) * | 2020-08-19 | 2021-11-09 | 赵永刚 | Sampling tank for storing ambient air sample |
| CN113529046A (en) * | 2021-08-09 | 2021-10-22 | 梁存军 | High-temperature vapor phase coating machine for sampling tank of Suma tank |
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Application publication date: 20110330 |