CN101986175A - surface plasma excitation method for chip-integrated metal nanowire - Google Patents
surface plasma excitation method for chip-integrated metal nanowire Download PDFInfo
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- CN101986175A CN101986175A CN 201010523965 CN201010523965A CN101986175A CN 101986175 A CN101986175 A CN 101986175A CN 201010523965 CN201010523965 CN 201010523965 CN 201010523965 A CN201010523965 A CN 201010523965A CN 101986175 A CN101986175 A CN 101986175A
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- nanometer line
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002070 nanowire Substances 0.000 title abstract description 16
- 230000005284 excitation Effects 0.000 title abstract 5
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- 230000010287 polarization Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
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Abstract
The invention discloses a surface plasma excitation method for chip-integrated metal nanowire, which comprises the following steps: a metal nanowire is arranged on a light emitting surface of a diode chip, and the plasma on an excitation surface is transmitted in the metal nanowires. In the excitation method of the invention, a light source and a plasma waveguide are integrated on the chip directly, thus omitting lens, prismas and other coupling devices in the conventional excitation method of the surface plasma; and linearly polarized light is output by the metal nanowire in the structure, and light intensity output can be adjusted by adjusting direction of the nanowire.
Description
Technical field
The present invention relates to the exciting method of surface plasma, relate in particular to the chip integrated exciting method that a kind of light source and surface plasma wave are led.
Background technology
In the nanometer field, metal nanometer line has broad application prospects in making electronics, photonics, senser element.In recent years, along with metal nanometer line preparation technology's improvement, low-loss relatively metal nanometer line is produced out, and is applied to make based on the Fabry-Perot optical resonator of surface plasma and the research of surface enhancing Raman phenomenon.Yet, how to realize the effective coupling of light from the light source to the metal nanometer line, remain a realistic problem of being badly in need of solution.Traditional method comprises that the defective of these methods is to adopt the optical element (prism, object lens etc.) of large volume, can't realize that the chip of light source and surface plasma waveguide is integrated based on the prism total reflection coupling of Kretschmann device or object lens focusing coupling.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of surface plasma exciting method of chip integrated metal nanometer line is provided.
The technical scheme that the present invention solves its technical matters employing is: the exiting surface that an end of metal nanometer line is placed laser diode chip, at this end excitating surface plasma and transmit in metal nanometer line, the other end of metal nanometer line is as the output terminal of light signal.
The beneficial effect that the present invention has is: the present invention has realized as the laser diode chip of light source integrated with the direct chip of the metal nanometer line of leading as surface plasma wave, dispensed the coupling device of light source, thereby improved the integrated level of integral device to nano wire.
Description of drawings
Fig. 1 is an exciting method synoptic diagram of the present invention.
Fig. 2 be this structure surface plasma excite photo, wherein, (a) be the electron scanning micrograph that three nano silver wires are positioned over laser diode (centre wavelength is 650nm) exiting surface; Optical microscope photograph when (b) lighting for laser diode, white arrow has indicated optical position; (c) optical microscope photograph for using 780nm wavelength laser diode excitating surface plasma to transmit in nano silver wire, the placement location of Yin Nami is shown in illustration.All scales are 5 μ m among Fig. 2.
Fig. 3 is nano silver wire output polarisation of light characteristic, wherein, (a) indicates the placement location of nano silver wire for optical microscope photograph; (b-d) be the optical microscope photograph of nano wire output light under the different polarization angle, corresponding polarization angle is respectively-7.7 °, and-45.9 ° and-78.7 °, wherein the black four-headed arrow is represented the polarization direction; (e) be the variation relation of output intensity with polarization angle.All scales are 5 μ m among Fig. 3.
Fig. 4 is the variation relation of output intensity with the nano silver wire angle, wherein, (a) is the promotion method synoptic diagram of nano wire; (b-d) be in the adjusting angle process, intensity variations process under the different angles; (e) be the variation relation of light intensity with angle.All scales are 5 μ m among Fig. 4.
Fig. 5 is several supplementing structure of this invention, and wherein, (a b) is respectively the variation of introducing a nanometer rods front and back nano silver wire output intensity on this architecture basics, and wherein the illustration in the lower right corner and the upper right corner is respectively optical microscope photograph and electron micrograph; (c) for exciting from the nano silver wire middle part; (d) be that the nano silver wire of two overlapping placements successively is excited respectively; (c, d) illustration in is the electron micrograph of corresponding construction.The scale of Fig. 5 is 5 μ m.
Embodiment
The invention will be further described below in conjunction with accompanying drawing and example, and it is more obvious that purpose of the present invention and effect will become.
As shown in Figure 1, the present invention places an end of metal nanometer line the exiting surface of laser diode chip, the transmission of excitating surface plasma in metal nanometer line, at the other end of metal nanometer line, the light of surface plasma coupling becoming free space emits.
Described metal nano linear diameter is 50-1000nm.Described laser diode uses general commercial lasers diode, and wavelength can be 400-2000nm.As the laser diode that uses among Fig. 2 (b) DL-3147-065 type red laser diode (the about 650nm of centre wavelength), the RLD78NZH1 type infra-red laser diode (centre wavelength is about 785nm) of use Rohm company among Fig. 2 (c) for Japanese Sanyo company.Described structure can be many or single nano-wire structure, and Fig. 2 (b) is the photo that three nano silver wires excite in the coupling of 650nm wavelength place simultaneously, and Fig. 2 (c) excites for the coupling of single structure at 785nm wavelength place.
(1) use physics or chemical method prepare the metal nanometer line about diameter 50-1000nm, under optical microscope, utilize optical fiber probe on the laser diode end face, to promote nano silver wire, make one section place the laser diode exiting surface, thus excitating surface plasma.Fig. 3 (a) is the optical microscope photograph of this structure, between the object lens of optical microscope and camera, insert a polarizer, turn off the optical microscope illumination light then, open laser diode, select the polarization angle of the polarizer, can take the output intensity of nano wire under the different polarization states.Fig. 3 (b-d) is respectively-7.7 ° for polarization angle θ, the optical microscope photograph when-45.9 ° and-78.7 °.As can be seen, output intensity is with the polarization angle sinusoidal variations from Fig. 3 (e).
(2) by using optical fiber probe to promote an end of nano wire, can regulate the angle of nano wire, thereby obtain the variation of output intensity under the different angles.Promote nano wire with the synoptic diagram that changes angle shown in Fig. 4 (a).Fig. 4 (b-d) is an angle
Be respectively 38 °, the optical microscope photograph when 60 ° and 70 °.From Fig. 4 (e) as can be seen, along with angle
Increase, light intensity increases rapidly.
(3) Fig. 5 is the microphoto of several improvement structures.(a b) is respectively the photo of placing nanometer rods front and back to Fig. 5, and contrast draws: introduce nanometer rods, make output intensity strengthen about 53%.The photo that Fig. 5 (c) excites for the middle part from nano wire.Fig. 5 (d) represents two overlapping placements of nano silver wire, and nano silver wire is excited by the exiting surface of laser diode, is coupled in another root nano silver wire again.
It is directly integrated on chip that the surface plasma exciting method of the chip integrated metal nanometer line of the present invention makes light source and surface plasma wave lead, thereby saved coupling devices such as lens in the conventional surface plasma exciatiaon method, prism.Metal nanometer line is output as linearly polarized light in this structure, can regulate light intensity output by the direction of regulating nano wire.
Claims (6)
1. the surface plasma exciting method of a chip integrated metal nanometer line, it is characterized in that, this method is: an end of metal nanometer line is positioned over the exiting surface of laser diode chip, at this end excitating surface plasma and it is transmitted in metal nanometer line.The other end of metal nanometer line is as the output terminal of light signal.
2. the surface plasma exciting method of chip integrated metal nanometer line according to claim 1 is characterized in that, described metal nano linear diameter can be 50～1000nm.
3. the surface plasma exciting method of chip integrated metal nanometer line according to claim 1 is characterized in that, described laser diode chip is the general commercial laser diode, and centre wavelength can be 400nm～2000nm.
4. the surface plasma exciting method of chip integrated metal nanometer line according to claim 1 is characterized in that, this method with the end face of laser diode chip as substrate.
5. the surface plasma exciting method of chip integrated metal nanometer line according to claim 1 is characterized in that, the output terminal light signal strength of described metal nanometer line depends on the angle of metal nanometer line and laser diode output optical zone.
6. the surface plasma exciting method of chip integrated metal nanometer line according to claim 1 is characterized in that, described metal nanometer line can be single or many root architectures.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010523965 CN101986175A (en) | 2010-10-29 | 2010-10-29 | surface plasma excitation method for chip-integrated metal nanowire |
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| CN 201010523965 CN101986175A (en) | 2010-10-29 | 2010-10-29 | surface plasma excitation method for chip-integrated metal nanowire |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103022896A (en) * | 2012-12-17 | 2013-04-03 | 南京大学 | Miniature composite structure laser |
| CN103310866A (en) * | 2013-06-21 | 2013-09-18 | 江苏大学 | Method for trapping atoms on nanoscale by aid of coated probe |
| CN106785917A (en) * | 2016-12-23 | 2017-05-31 | 武汉工程大学 | The nano laser of the surface plasma excimer based on molybdenum bisuphide |
| CN112684539A (en) * | 2021-01-13 | 2021-04-20 | 上海理工大学 | Method for controlling movement of metal nanowire by using optical force effect and photonic integrated system |
-
2010
- 2010-10-29 CN CN 201010523965 patent/CN101986175A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| 《APPLIED PHYSICS LETTERS 》 20100204 Ma Zhe ETAL Surface plasmon excitation in silver nanowires directly deposited on a laser diode chip 051119-1-051119-3 1-6 第96卷, 第5期 2 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN102882125B (en) * | 2012-09-19 | 2014-04-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103022896A (en) * | 2012-12-17 | 2013-04-03 | 南京大学 | Miniature composite structure laser |
| CN103310866A (en) * | 2013-06-21 | 2013-09-18 | 江苏大学 | Method for trapping atoms on nanoscale by aid of coated probe |
| CN106785917A (en) * | 2016-12-23 | 2017-05-31 | 武汉工程大学 | The nano laser of the surface plasma excimer based on molybdenum bisuphide |
| CN106785917B (en) * | 2016-12-23 | 2018-12-14 | 武汉工程大学 | The nano laser of surface plasma excimer based on molybdenum disulfide |
| CN112684539A (en) * | 2021-01-13 | 2021-04-20 | 上海理工大学 | Method for controlling movement of metal nanowire by using optical force effect and photonic integrated system |
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Application publication date: 20110316 |