CN101975384A - Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp - Google Patents
Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp Download PDFInfo
- Publication number
- CN101975384A CN101975384A CN2010105091329A CN201010509132A CN101975384A CN 101975384 A CN101975384 A CN 101975384A CN 2010105091329 A CN2010105091329 A CN 2010105091329A CN 201010509132 A CN201010509132 A CN 201010509132A CN 101975384 A CN101975384 A CN 101975384A
- Authority
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- China
- Prior art keywords
- led
- laminated film
- led wafer
- radiating
- heat radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 230000005855 radiation Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005496 tempering Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of LEDs (Light Emitting Diode), in particular to a manufacturing method of a radiating structure of an LED (Light Emitting Diode) lamp, comprising the following steps of: A, roasting an uncut LED wafer or a base plate to remove moisture; B, superficially processing plasma; C, plating a radiating laminated film on the backside of the LED wafer or the base plate by using a sputtering or vapor depositing mode; and D, carrying out tempering treatment. The radiating laminated film is plated on the backside of the LED wafer or the base plate, the radiating laminated film has higher coefficient of heat conductivity, and therefore, the LED wafer can quickly and effectively transfer heat on the base plate through the radiating laminated film to increase radiating efficiency and reduce the radiating cost of the LED lamp, has the simple radiating structure, simplifies a manufacturing technology and reduces the volume and the weight of the LED lamp.
Description
Technical field:
The present invention relates to the LED technical field, refer in particular to the preparation method of LED lamp cooling structure.
Background technology:
LED is a kind of light emitting semiconductor device, is used as indicator lamp, display screen etc. widely.White light LEDs be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.LED changed the incandescent lamp tungsten filament luminous with the luminous principle of fluorescent lamp tricolor powder, utilize electroluminescence, have that light efficiency height, radiationless, life-span are long, an advantage of low-power consumption and environmental protection.A kind of traditional approach that forms white light LEDs is that blue light or ultraviolet chip excite the fluorescent material that is covering on chip, and the light stimulus fluorescent material that chip sends under electricity drives produces the visible light of other wave band, and the each several part colour mixture forms white light.For the LED encapsulation, heat radiation is a key technical problem, and the quality of the effect of heat dissipation technology will directly have influence on the performance of LED.
At present, LED includes radiator, LED wafer, secondary optical lens module, power module and lamp housing etc.During encapsulation, wafer is placed in the reflector in the lamp housing, lamp housing is not only as the carrier of reflector but also as electrode and electrode pin use, wafer is connected with the radiator contact, make the heat of wafer can pass through radiator heat-dissipation, but this radiator structure is complicated, the processing technology complexity, make inconvenience, and radiating efficiency is not good.
Summary of the invention:
Purpose of the present invention is exactly to provide a kind of preparation method of utilizing the heat radiation laminated film to improve the LED lamp cooling structure of thermal conductivity factor, raising radiating efficiency, simplification manufacture craft at the deficiency of prior art existence.
To achieve these goals, the technical solution used in the present invention is:
The preparation method of LED lamp cooling structure, it may further comprise the steps:
A, uncut LED wafer or substrate toasted remove moisture;
B, carry out the surface treatment of electricity slurry;
C, in the mode of sputter or evaporation at LED wafer or substrate back plating one deck heat radiation laminated film;
D, carry out temper.
Wherein, step C is specially:
C1, load onto sputter or vapor deposition mask and location for LED wafer or substrate;
C2, LED wafer or substrate are placed the vacuum chamber of evaporator and bleed;
C3, carry out sputter or evaporation, form one deck heat radiation laminated film at LED wafer or substrate back.
Described heat radiation laminated film is copper aluminium laminated film or diamond-like carbon film.
The thickness of described heat radiation laminated film is 1～3 μ m.
Beneficial effect of the present invention is: the present invention includes step: A, uncut LED wafer or substrate toasted remove moisture; B, carry out the surface treatment of electricity slurry; C, in the mode of sputter or evaporation at LED wafer or substrate back plating one deck heat radiation laminated film; D, carry out temper; The present invention plates the processing of heat radiation laminated film at LED wafer or substrate back, the heat radiation laminated film has higher thermal conductivity factor, the LED wafer can rapidly, efficiently be delivered to heat on the substrate by the heat radiation laminated film, increase radiating efficiency and reduce the heat radiation cost of LED light fixture, and radiator structure is simple, simplify manufacture craft, reduced LED light fixture volume and weight.
The specific embodiment:
The preparation method of LED lamp cooling structure may further comprise the steps:
1, uncut LED wafer or substrate are toasted removes moisture;
2, carry out the surface treatment of electricity slurry;
3, be that LED wafer or substrate are loaded onto sputter or vapor deposition mask and location;
4, LED wafer or substrate are placed the vacuum chamber of evaporator and be pumped to vacuum;
5, carry out sputter or evaporation, form the heat radiation laminated film that a layer thickness is 1～3 μ m at LED wafer or substrate back, the heat radiation laminated film is the film of copper aluminium laminated film, diamond-like carbon film or other perfect heat-dissipating.
6, take out LED wafer or substrate and carry out temper;
7, on the LED wafer, paste blue patch;
8, the LED wafer is cut.
Wherein, thin more its radiating effect of heat radiation laminated film is relatively just poor more, and thick more its radiating effect is relatively just good more, and heat radiation laminated film thickness is that 1～3 μ m has preferable combination property, as being 1 μ m, 1.5 μ m, 2 μ m, 3 μ m etc., is preferably 2 μ m.
The present invention plates the processing of heat radiation laminated film at LED wafer or substrate back, reduce the thermal resistance between LED wafer bottom and the substrate, increase the thermal conductivity factor between them, the heat that inner node produces when making the LED wafer work can rapidly, efficiently be delivered on the substrate and derivation by the heat radiation laminated film, the life-span of the light efficiency of so real raising LED light fixture, prolongation LED light fixture, increase radiating efficiency and reduce the heat radiation cost of LED light fixture, and radiator structure is simple, simplify manufacture craft, reduced LED light fixture volume and weight.
Certainly, the above only is a better embodiment of the present invention, so all equivalences of doing according to the described structure of patent claim of the present invention, feature and principle change or modify, is included in the patent claim of the present invention.
Claims (4)
1.LED the preparation method of lamp cooling structure is characterized in that, may further comprise the steps:
A, uncut LED wafer or substrate toasted remove moisture;
B, carry out the surface treatment of electricity slurry;
C, in the mode of sputter or evaporation at LED wafer or substrate back plating one deck heat radiation laminated film;
D, carry out temper.
2. the preparation method of LED lamp cooling structure according to claim 1 is characterized in that, step C is specially:
C1, load onto sputter or vapor deposition mask and location for LED wafer or substrate;
C2, LED wafer or substrate are placed the vacuum chamber of evaporator and bleed;
C3, carry out sputter or evaporation, form one deck heat radiation laminated film at LED wafer or substrate back.
3. the preparation method of LED lamp cooling structure according to claim 1 is characterized in that: described heat radiation laminated film is copper aluminium laminated film or diamond-like carbon film.
4. according to the preparation method of any described LED lamp cooling structure of claim 1-3, it is characterized in that: the thickness of described heat radiation laminated film is 1～3 μ m.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105091329A CN101975384A (en) | 2010-10-15 | 2010-10-15 | Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp |
| CN2011103040350A CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105091329A CN101975384A (en) | 2010-10-15 | 2010-10-15 | Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101975384A true CN101975384A (en) | 2011-02-16 |
Family
ID=43575287
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105091329A Pending CN101975384A (en) | 2010-10-15 | 2010-10-15 | Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp |
| CN2011103040350A Pending CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103040350A Pending CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101975384A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103540902A (en) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method for improving quality of physical-sputtering film forming |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969436A (en) * | 2012-11-30 | 2013-03-13 | 绍兴上鼎智控电子科技有限公司 | Phase transition constant temperature heat radiation heat conduction LED (Light Emitting Diode) packaging module |
| TWI588405B (en) * | 2014-09-18 | 2017-06-21 | Wei-Jia Huang | LED cooling substrate process and its structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3869219B2 (en) * | 2000-02-08 | 2007-01-17 | 山洋電気株式会社 | Cooling device with heat sink |
| CN201068272Y (en) * | 2007-05-11 | 2008-06-04 | 讯凯国际股份有限公司 | Positioning and packing structure for radiator |
| CN101408302A (en) * | 2007-10-11 | 2009-04-15 | 富士迈半导体精密工业（上海）有限公司 | Light source module group with good heat radiating performance |
-
2010
- 2010-10-15 CN CN2010105091329A patent/CN101975384A/en active Pending
-
2011
- 2011-09-30 CN CN2011103040350A patent/CN102332511A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103540902A (en) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method for improving quality of physical-sputtering film forming |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102332511A (en) | 2012-01-25 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG REAL FAITH LIGHTING CO., LTD. Free format text: FORMER OWNER: CHEN LIN Effective date: 20111008 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 523000 DONGGUAN, GUANGDONG PROVINCE TO: 528251 FOSHAN, GUANGDONG PROVINCE |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20111008 Address after: 528251 Guangdong Province, Foshan City Nanhai Pingzhou Shawei Industrial District South Street No. 21 Applicant after: Guangdong Real Faith Lighting Co., Ltd. Address before: 523000 Guangdong Province, Dongguan City Wancheng District BBK District 8 Building No. 88 Applicant before: Chen Lin |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Open date: 20110216 |