CN101966688A - 超大规模集成电路铜布线表面低压化学机械抛光方法 - Google Patents
超大规模集成电路铜布线表面低压化学机械抛光方法 Download PDFInfo
- Publication number
- CN101966688A CN101966688A CN 201010231553 CN201010231553A CN101966688A CN 101966688 A CN101966688 A CN 101966688A CN 201010231553 CN201010231553 CN 201010231553 CN 201010231553 A CN201010231553 A CN 201010231553A CN 101966688 A CN101966688 A CN 101966688A
- Authority
- CN
- China
- Prior art keywords
- polishing
- copper
- mechanical polishing
- low pressure
- connects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 40
- 239000010949 copper Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000002738 chelating agent Substances 0.000 claims abstract description 16
- 239000007800 oxidant agent Substances 0.000 claims abstract description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000003082 abrasive agent Substances 0.000 claims abstract description 10
- 230000003213 activating effect Effects 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims description 15
- 230000010354 integration Effects 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 4
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229960001484 edetic acid Drugs 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 230000009471 action Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 4
- 239000013522 chelant Substances 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010231553 CN101966688B (zh) | 2010-07-21 | 2010-07-21 | 超大规模集成电路铜布线表面低压化学机械抛光方法 |
PCT/CN2010/080468 WO2012009937A1 (zh) | 2010-07-21 | 2010-12-30 | 超大规模集成电路铜布线表面低压化学机械抛光方法 |
US13/592,326 US8921229B2 (en) | 2010-07-21 | 2012-08-22 | Method of polishing copper wiring surfaces in ultra large scale integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010231553 CN101966688B (zh) | 2010-07-21 | 2010-07-21 | 超大规模集成电路铜布线表面低压化学机械抛光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101966688A true CN101966688A (zh) | 2011-02-09 |
CN101966688B CN101966688B (zh) | 2011-12-14 |
Family
ID=43545944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010231553 Expired - Fee Related CN101966688B (zh) | 2010-07-21 | 2010-07-21 | 超大规模集成电路铜布线表面低压化学机械抛光方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8921229B2 (zh) |
CN (1) | CN101966688B (zh) |
WO (1) | WO2012009937A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105506632A (zh) * | 2015-12-24 | 2016-04-20 | 天津晶岭微电子材料有限公司 | 碱性抛光液在低压力下提高glsi铜布线铜膜去除速率的应用 |
CN105598825A (zh) * | 2015-12-24 | 2016-05-25 | 天津晶岭微电子材料有限公司 | 提高glsi硅通孔碱性cmp中铜膜厚度一致性的方法 |
CN105619235A (zh) * | 2015-12-24 | 2016-06-01 | 天津晶岭微电子材料有限公司 | 控制glsi多层铜布线精抛碟形坑延伸的碱性抛光液应用 |
CN106695567A (zh) * | 2015-07-17 | 2017-05-24 | 盛美半导体设备(上海)有限公司 | 流量补偿方法 |
CN115058198A (zh) * | 2022-03-21 | 2022-09-16 | 康劲 | 一种新型抛光液及其制备方法和应用 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103286672B (zh) * | 2012-02-29 | 2015-11-04 | 上海硅酸盐研究所中试基地 | 快速获得具有原子台阶表面的SiC晶片抛光方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1858130A (zh) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | 用于大规模集成电路多层布线中钨插塞的抛光液 |
CN1864924A (zh) * | 2006-06-09 | 2006-11-22 | 天津晶岭微电子材料有限公司 | 计算机硬盘基片粗糙度的控制方法 |
CN1864926A (zh) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | 硅单晶衬底材料表面粗糙度的控制方法 |
CN100491072C (zh) * | 2006-06-09 | 2009-05-27 | 河北工业大学 | Ulsi多层铜布线化学机械抛光中碟形坑的控制方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3556883A (en) * | 1967-07-21 | 1971-01-19 | Mitsubishi Edogawa Kagaku Kk | Method for chemically polishing copper or copper alloy |
CN1137230C (zh) * | 2002-05-10 | 2004-02-04 | 河北工业大学 | 超大规模集成电路多层铜布线中铜与钽的化学机械全局平面化抛光液 |
CN1140599C (zh) * | 2002-05-10 | 2004-03-03 | 河北工业大学 | 超大规模集成电路多层铜布线用化学机械全局平面化抛光液 |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | COPPER WIRING POLISHING COMPOSITION AND SEMICONDUCTOR INTEGRATED CIRCUIT SURFACE POLISHING METHOD |
CN100462203C (zh) * | 2006-06-09 | 2009-02-18 | 河北工业大学 | Ulsi多层铜布线化学机械抛光中粗糙度的控制方法 |
CN1861723A (zh) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | 硅单晶衬底材料抛光液及其制备方法 |
CN1887997A (zh) * | 2006-06-09 | 2007-01-03 | 河北工业大学 | 超大规模集成电路多层布线SiO2介质的纳米SiO2磨料抛光液 |
JP5277640B2 (ja) * | 2007-10-17 | 2013-08-28 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
-
2010
- 2010-07-21 CN CN 201010231553 patent/CN101966688B/zh not_active Expired - Fee Related
- 2010-12-30 WO PCT/CN2010/080468 patent/WO2012009937A1/zh active Application Filing
-
2012
- 2012-08-22 US US13/592,326 patent/US8921229B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1858130A (zh) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | 用于大规模集成电路多层布线中钨插塞的抛光液 |
CN1864924A (zh) * | 2006-06-09 | 2006-11-22 | 天津晶岭微电子材料有限公司 | 计算机硬盘基片粗糙度的控制方法 |
CN1864926A (zh) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | 硅单晶衬底材料表面粗糙度的控制方法 |
CN100491072C (zh) * | 2006-06-09 | 2009-05-27 | 河北工业大学 | Ulsi多层铜布线化学机械抛光中碟形坑的控制方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106695567A (zh) * | 2015-07-17 | 2017-05-24 | 盛美半导体设备(上海)有限公司 | 流量补偿方法 |
CN105506632A (zh) * | 2015-12-24 | 2016-04-20 | 天津晶岭微电子材料有限公司 | 碱性抛光液在低压力下提高glsi铜布线铜膜去除速率的应用 |
CN105598825A (zh) * | 2015-12-24 | 2016-05-25 | 天津晶岭微电子材料有限公司 | 提高glsi硅通孔碱性cmp中铜膜厚度一致性的方法 |
CN105619235A (zh) * | 2015-12-24 | 2016-06-01 | 天津晶岭微电子材料有限公司 | 控制glsi多层铜布线精抛碟形坑延伸的碱性抛光液应用 |
CN115058198A (zh) * | 2022-03-21 | 2022-09-16 | 康劲 | 一种新型抛光液及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
US8921229B2 (en) | 2014-12-30 |
US20120315764A1 (en) | 2012-12-13 |
WO2012009937A1 (zh) | 2012-01-26 |
CN101966688B (zh) | 2011-12-14 |
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Free format text: CORRECT: ADDRESS; FROM: 300130 HONGQIAO, TIANJIN TO: 300000 HONGQIAO, TIANJIN |
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Effective date of registration: 20140416 Address after: 300000 T-shaped road, Hongqiao District, Tianjin Patentee after: Tianjin, Hebei University of Technology Asset Management Co., Ltd. Address before: 300130 Tianjin Road, Hongqiao District, No. 8 Patentee before: Hebei University of Technology |
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