CN101964366A - Photoelectric conversion element - Google Patents

Photoelectric conversion element Download PDF

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Publication number
CN101964366A
CN101964366A CN 201010253232 CN201010253232A CN101964366A CN 101964366 A CN101964366 A CN 101964366A CN 201010253232 CN201010253232 CN 201010253232 CN 201010253232 A CN201010253232 A CN 201010253232A CN 101964366 A CN101964366 A CN 101964366A
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layer
photo
conversion element
electric conversion
light
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侯智元
陈建宏
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AU Optronics Corp
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AU Optronics Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

The invention relates to a photoelectric conversion element which is applicable to converting a light ray into a light current. The photoelectric conversion element comprises a light converting layer, a top conducting layer and a bottom conducting layer. The light converting layer is provided with a bottom plane, a top flat face relative to the bottom flat face and a light incident side face connected between the bottom flat face and the top flat face, wherein the included angle between the bottom flat face and the light incident side face is theta, and theta is not less than 64 DEG and not more than 79 DEG. The top conducting layer is arranged above the top flat face of the light converting layer, and the bottom conducting layer is arranged below the bottom flat face of the light converting layer.

Description

Photo-electric conversion element
Technical field
The invention relates to a kind of photo-electric conversion element, and particularly relevant for the photo-electric conversion element of a kind of rectilinear (vertical type).
Background technology
In recent years, photo-electric conversion element such as solar cell, OPTICAL SENSORS has been applied in the human living environment in large quantities.Be accompanied by the environmental protection and energy saving subject under discussion, solar cell becomes the green alternative energy source of tool potentiality, and OPTICAL SENSORS then is applied in the flat-panel screens.By OPTICAL SENSORS, flat-panel screens can be detected the ambient light line strength to adjust the brightness that shows.In addition, OPTICAL SENSORS makes flat-panel screens possess touch controllable function and/or scan function, makes flat-panel screens more multi-functional.
On the substrate, photo-electric conversion element can be divided into two major types roughly according to its structure: one is the horizontal electro conversion element, and another is rectilinear photo-electric conversion element.Compare with rectilinear photo-electric conversion element, the technology of horizontal electro conversion element is comparatively complicated, but because light is easier to shine the light conversion layer of horizontal electro conversion element, so the horizontal electro conversion element has preferable sensitivity and photoelectric conversion efficiency.The technology of rectilinear photo-electric conversion element is simple relatively, but because light is not easy to shine the light conversion layer of rectilinear photo-electric conversion element, so the sensitivity of rectilinear photo-electric conversion element and photoelectric conversion efficiency are relatively poor.Therefore, how to improve the sensitivity and the photoelectric conversion efficiency of rectilinear photo-electric conversion element, one of real problem of desiring most ardently solution for those skilled in the art.
Summary of the invention
The invention provides a kind of photo-electric conversion element, its light conversion layer has a light incident side face that tilts, with effective enhancement sensitivity (sensitivity) and photoelectric conversion efficiency.
The invention provides a kind of photo-electric conversion element, be suitable for a light is converted to a photoelectric current.Aforesaid photo-electric conversion element comprises a light conversion layer, a top conductive layer and an end conductive layer.Light conversion layer has a baseplane, with respect to a plane, top of baseplane and be connected in the baseplane and a light incident side face that pushes up between the plane, wherein the angle of baseplane and light incident side face is θ, and 64 °≤θ≤79 °.The top conductive layer is disposed on the plane, top of light conversion layer, and end conductive layer then is disposed under the baseplane of light conversion layer.
In one embodiment of this invention, the incidence angle of the aforesaid light incident side face of light incident is θ i, and θ equals θ i
In one embodiment of this invention, aforesaid light conversion layer for example is an intrinsic semiconductor layer.
In one embodiment of this invention, aforesaid light conversion layer for example is an amorphous silicon layer, a microcrystal silicon layer, a polysilicon layer, a silicon epitaxial layers, a silica-rich material layer, a germanium-silicon layer, a gallium arsenic layer or its lamination.
In one embodiment of this invention, aforesaid photo-electric conversion element can further comprise one first type doping semiconductor layer and one second type doping semiconductor layer, wherein the first type doping semiconductor layer is disposed between end conductive layer and the light conversion layer, and the second type doping semiconductor layer then is disposed between top conductive layer and the light conversion layer.
In one embodiment of this invention, when the first type doping semiconductor layer was N type doping semiconductor layer, the second type doping semiconductor layer was a P type doping semiconductor layer.Otherwise when the first type doping semiconductor layer was P type doping semiconductor layer, the second type doping semiconductor layer was a N type doping semiconductor layer.
In one embodiment of this invention, aforesaid photo-electric conversion element can further comprise a reflector, and this reflector is disposed between the first type doping semiconductor layer and the end conductive layer.
In one embodiment of this invention, aforesaid top conductive layer has a matsurface, and matsurface not with the top plane contact of light conversion layer.
In one embodiment of this invention, 75 °≤θ≤79 °.
In one embodiment of this invention, aforesaid photo-electric conversion element can further comprise a protective layer, to cover on the light incident side face.
In one embodiment of this invention, the material of aforesaid protective layer for example is nitrogen silicide or oxygen silicide.In addition, when being coated with protective layer on the light incident side face, 64 °≤θ≤69 °.
In one embodiment of this invention, aforesaid baseplane and plane, top is shaped as polygon, circle or oval.
In one embodiment of this invention, aforesaid top conductive layer is a transparency conducting layer, and end conductive layer is a reflective conductive layer.
Because the light conversion layer in the photo-electric conversion element of the present invention has a light incident side face that tilts, therefore photo-electric conversion element of the present invention has good sensitivity and photoelectric conversion efficiency.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing to be described in detail below.
Description of drawings
For above-mentioned and other purposes of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Fig. 1 is the schematic perspective view of the photo-electric conversion element of one embodiment of the invention;
Fig. 2 A to Fig. 5 A and Fig. 2 B to Fig. 5 B are the generalized section of the photo-electric conversion element of different embodiments of the invention.
Wherein, Reference numeral
100,100a～100f: photo-electric conversion element 110: light conversion layer
110a: baseplane 110b: plane, top
110c: light incident side face 120: end conductive layer
130: top conductive layer 130a: matsurface
150: the second type doping semiconductor layers of 140: the first type doping semiconductor layers
160: protective layer 170: reflector
θ i: incidence angle θ r: the refraction angle
θ: angle L: light
R: reverberation
Embodiment
Fig. 1 is the schematic perspective view of the photo-electric conversion element of one embodiment of the invention, and Fig. 2 A to Fig. 5 A and Fig. 2 B to Fig. 5 B are the generalized section of the photo-electric conversion element of different embodiments of the invention.
Please refer to Fig. 1 and Fig. 2 A, the photo-electric conversion element 100 of present embodiment is suitable for a light L is converted to a photoelectric current.The photo-electric conversion element 100 of present embodiment comprises a light conversion layer 110, an end conductive layer 120 and a top conductive layer 130.Light conversion layer 110 has a baseplane 110a, with respect to the top plane 110b of baseplane 110a and be connected in baseplane 110a and a light incident side face 110c who pushes up between the 110b of plane, wherein the angle of baseplane 110a and light incident side face 110c is θ, and 64 °≤θ≤79 °.End conductive layer 120 is disposed on the baseplane 110a of light conversion layer 110, and top conductive layer 130 then is disposed under plane, the top 110b of light conversion layer 110.
In the present embodiment, baseplane 110a and the shape rectangle that pushes up plane 110b.Certainly, in other feasible embodiment.Baseplane 110a and top plane 110b can be polygon (as triangle, pentagon, hexagon etc.), circle, ellipse, annular or concentrically ringed multi-ringed.In addition, the top conductive layer 130 of present embodiment for example is a transparency conducting layer in order to light L by shining on light conversion layer 110, and end conductive layer 120 for example is a reflective conductive layer with light L reflected light conversion layer 110.
In the present embodiment, light conversion layer 110 is an intrinsic semiconductor layer for example, and light conversion layer 110 for example is an amorphous silicon layer, a microcrystal silicon layer, a polysilicon layer, a silicon epitaxial layers, a silica-rich material layer, a germanium-silicon layer, a gallium arsenic layer or its lamination.When light conversion layer 110 was made of an intrinsic semiconductor layer, photo-electric conversion element 100 can be in order to as OPTICAL SENSORS.Certainly, present embodiment does not limit the material and the kenel of light conversion layer 110, and light conversion layer 110 can be other materials or have other kenels.
In other feasible embodiment, in order further to promote the photoelectric conversion efficiency of photo-electric conversion element 100, photo-electric conversion element 100 can further comprise one first type doping semiconductor layer 140 and one second type doping semiconductor layer 150, wherein the first type doping semiconductor layer 140 is disposed between top conductive layer 130 and the light conversion layer 110, and the second type doping semiconductor layer 150 then is disposed between end conductive layer 120 and the light conversion layer 110.For example, when the first type doping semiconductor layer 140 was N type doping semiconductor layer, the second type doping semiconductor layer 150 was a P type doping semiconductor layer.Otherwise when the first type doping semiconductor layer 140 was P type doping semiconductor layer, the second type doping semiconductor layer 150 was a N type doping semiconductor layer.When photo-electric conversion element 100 included the first type doping semiconductor layer 140 and the second type doping semiconductor layer 150, photo-electric conversion element 100 can be in order to as solar cell.It should be noted that, the first type doping semiconductor layer 140 and the second type doping semiconductor layer 150 are the selectivity member in the photo-electric conversion element 100, and these those skilled in the art can be according to the product design demand and the selectively fabricated first type doping semiconductor layer 140 and the second type doping semiconductor layer 150.
For light L can be incident in the light conversion layer 110 smoothly, it is angle theta that present embodiment makes baseplane 110a and light incident side face 110c, and is preferably 64 °≤θ≤79 °.Wherein, angle theta equals the incidence angle θ of light L incident light incident side 110c iIn detail, angle theta is better to be the definition that meets Brewster angle (Brewster ' s angle), as the incidence angle θ of light L iWith refraction angle θ rSummation be that pi/2 (is θ i+ θ r=pi/2) time, the ratio of reverberation R is near 0, and light L is incident to ratio the light conversion layer 110 near 100% from light incident side face 110c.Suppose that light is that the medium of n1 is incident to the light conversion layer 110 that refractive index is n2 by refractive index, as incidence angle θ iThe condition that satisfies Brewster angle (is θ i+ θ r=pi/2) time, can push away to such an extent that angle theta equals incidence angle θ by following formula i
n1·sinθ i＝n2·sinθ r
→n1·sinθ i＝n2·sin(π/2-θ i)
→n1·sinθ i＝n2·cosθ i
→θ i＝tan -1(n2/n1)＝θ
Generally speaking, as light L during by the direct incident of air light conversion layer 110, angle theta is between 75 ° to 79 °.Because angle theta meets the condition of Brewster angle, therefore better light incident ratio can be arranged.Below will be with wavelength, the material of light conversion layer 110 and the relativeness of refractive index and angle theta thereof of table 1 record light L.
Figure BSA00000229500700051
Table 1
Then please refer to Fig. 2 B, photo-electric conversion element 100a and the photo-electric conversion element 100 among Fig. 2 A among Fig. 2 B are similar, but the two main difference is: photo-electric conversion element 100a further comprises a protective layer 160, to cover on the light incident side face 110c.In the present embodiment, the material of protective layer 160 for example is nitrogen silicide or oxygen silicide.When being coated with protective layer 160 on the light incident side face 110c, and light L is when protective layer 160 incident light conversion layers 110, and angle theta is preferable between 64 ° to 69 °.Below will be with the wavelength of table 2 record light L, material (nitrogen silicide) and refractive index, the material of light conversion layer 110 and the relativeness of refractive index and angle theta thereof of protective layer 170.
Figure BSA00000229500700052
Figure BSA00000229500700061
Table 2
Then please refer to Fig. 3 A, photo-electric conversion element 100b and the photo-electric conversion element 100 among Fig. 2 A among Fig. 3 A are similar, but the two main difference is: photo-electric conversion element 100b further comprises a reflector 170, and this reflector 170 is disposed between the first type doping semiconductor layer 150 and the end conductive layer 120.When end conductive layer 120 is provided with reflector 170, it will be more flexible that the material of end conductive layer 120 is selected, and in detail, end conductive layer 120 can be selected electrically conducting transparent material or reflection conductive material.
Then please refer to Fig. 3 B, photo-electric conversion element 100c and the photo-electric conversion element 100b among Fig. 3 A among Fig. 3 B are similar, but the two main difference is: photo-electric conversion element 100c further comprises a protective layer 160, to cover on the light incident side face 110c.
Please refer to Fig. 4 A, Fig. 4 B, Fig. 5 A and Fig. 5 B at last, from Fig. 4 A, Fig. 4 B, Fig. 5 A and Fig. 5 B as can be known, photo- electric conversion element 100d, 100e, 100f, 100g are similar with photo-electric conversion element 100,100a, 100b, 100c respectively, but main difference is: the top conductive layer 130 among photo- electric conversion element 100d, 100e, 100f, the 100g has a matsurface 130a, and this matsurface 130a does not contact with plane, the top 110b of light conversion layer 110.In alternate embodiment, protective layer also can cover top conductive layer 130, makes matsurface on its surface, can reduce reflection of light.
Because the light conversion layer in the photo-electric conversion element of the present invention has a light incident side face that tilts, the incidence angle that makes light be incident to light conversion layer satisfies the condition of Brewster angle, and therefore photo-electric conversion element of the present invention has good sensitivity and photoelectric conversion efficiency.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (16)

1. a photo-electric conversion element is characterized in that, is suitable for a light is converted to a photoelectric current, and this photo-electric conversion element comprises:
One light conversion layer, have a baseplane, with respect to a plane, top of this baseplane and be connected in this baseplane and this plane, top between a light incident side face, wherein the angle of this baseplane and this light incident side face is θ, and 64 °≤θ≤79 °;
One top conductive layer is disposed on this plane, top of this light conversion layer; And
One end conductive layer is disposed under this baseplane of this light conversion layer.
2. photo-electric conversion element according to claim 1 is characterized in that, the incidence angle of this this light incident side face of light incident is θ i, and θ equals θ i
3. photo-electric conversion element according to claim 1 is characterized in that this light conversion layer comprises an intrinsic semiconductor layer.
4. photo-electric conversion element according to claim 1 is characterized in that, this light conversion layer comprises that an amorphous silicon layer, a microcrystal silicon layer, a polysilicon layer, a silicon epitaxial layers, a silica-rich material layer, a germanium-silicon layer, a gallium arsenic layer or its are laminated.
5. photo-electric conversion element according to claim 1 is characterized in that, more comprises:
One first type doping semiconductor layer is disposed between this end conductive layer and this light conversion layer; And
One second type doping semiconductor layer is disposed between this top conductive layer and this light conversion layer.
6. photo-electric conversion element according to claim 5 is characterized in that, this first type doping semiconductor layer is a N type doping semiconductor layer, and this second type doping semiconductor layer is a P type doping semiconductor layer.
7. photo-electric conversion element according to claim 5 is characterized in that, this first type doping semiconductor layer is a P type doping semiconductor layer, and this second type doping semiconductor layer is a N type doping semiconductor layer.
8. photo-electric conversion element according to claim 5 is characterized in that, more comprises a reflector, is disposed between this first type doping semiconductor layer and this end conductive layer.
9. photo-electric conversion element according to claim 1 is characterized in that, more comprises a reflector, is disposed between this first type doping semiconductor layer and this end conductive layer.
10. photo-electric conversion element according to claim 1 is characterized in that, this top conductive layer has a matsurface, and this matsurface not with this top plane contact of this light conversion layer.
11. photo-electric conversion element according to claim 1 is characterized in that, 75 °≤θ≤79 °.
12. photo-electric conversion element according to claim 1 is characterized in that, more comprises a protective layer, covers on this light incident side face.
13. photo-electric conversion element according to claim 12 is characterized in that, the material of this protective layer comprises nitrogen silicide or oxygen silicide.
14. photo-electric conversion element according to claim 12 is characterized in that, 64 °≤θ≤69 °.
15. photo-electric conversion element according to claim 1 is characterized in that, this baseplane and this plane, top be shaped as polygon, circle or oval.
16. photo-electric conversion element according to claim 1 is characterized in that, this top conductive layer is a transparency conducting layer, and should end conductive layer be a reflective conductive layer.
CN 201010253232 2010-08-11 2010-08-11 Photoelectric conversion element Pending CN101964366A (en)

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN109716535A (en) * 2016-04-01 2019-05-03 太阳能公司 Three-layer semiconductor for patterned features on the solar cell stacks
CN109830562A (en) * 2019-01-11 2019-05-31 惠科股份有限公司 The manufacturing method and display device of a kind of detector, detector
JPWO2019043864A1 (en) * 2017-08-31 2020-09-24 株式会社京都セミコンダクター End face incident type light receiving element
CN114122184A (en) * 2021-11-23 2022-03-01 京东方科技集团股份有限公司 Photoelectric conversion structure, manufacturing method thereof, image sensor and electronic device

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CN114122184A (en) * 2021-11-23 2022-03-01 京东方科技集团股份有限公司 Photoelectric conversion structure, manufacturing method thereof, image sensor and electronic device

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