CN101958297A - Array flexible welding stud-connected and evaporation-cooled semiconductor device package - Google Patents
Array flexible welding stud-connected and evaporation-cooled semiconductor device package Download PDFInfo
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- CN101958297A CN101958297A CN2009101580094A CN200910158009A CN101958297A CN 101958297 A CN101958297 A CN 101958297A CN 2009101580094 A CN2009101580094 A CN 2009101580094A CN 200910158009 A CN200910158009 A CN 200910158009A CN 101958297 A CN101958297 A CN 101958297A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses an array flexible welding stud-connected and evaporation-cooled semiconductor device package, which is characterized in that: the array type welding stud connecting a semiconductor chip and a lead is metal wire bundle with two end faces connected by fusion welding; thermal stress is well eliminated; a gravity circular evaporation cooling mode ensures high heat exchange efficiency; a semiconductor tube core is vertically arranged for promoting coolant circulation; the package comprises the vertically assembled semiconductor tube core and power and control leads; the production is convenient; the packaging density of the device is high; the machine assembly is easy; and the replacement and repair of the device may be more convenient if a secondary heat exchange method is adopted.
Description
Technical field
The invention belongs to the semiconductor packages field, be specifically related to a kind of array flexible welding column and connected the evaporation cooling semiconductor device package
Background technology
Modern power electronics technology based on semiconductor power device, microelectronics and computer technology is the core and the key of energy-saving and emission-reduction, exploitation green energy resource.And the electrical characteristics of semiconductor power device and thermal characteristics are the core of core, crucial key.On the one hand the mankind that are applied as of semiconductor power device have saved a large amount of energy, in addition unavoidable thermal effect and to cause losing efficacy be the main cause that each quasi-converter damages in its course of work of aspect.The working temperature of most of semiconductor power device optimization is below 100 ℃, and a lot of devices just were easy to lose efficacy in time more than 100 ℃.Therefore, will reduce the loss of device on the one hand, for example technology such as conduction voltage drop device, soft switch are hanged down in development at a high speed, will improve the heat dispersion of device simultaneously, and are indispensable.
The semiconductor packages pattern is varied, mainly be all kinds of lead-in wire technologies in early days, there are many defectives in technology itself, shows: many lead-in wires and joint conference produce proximity effects, cause between the bonding line of same silicon chip or CURRENT DISTRIBUTION inequality between the bonding line of the different silicon chips in the same module; Because the big electric current of high frequency generates an electromagnetic field by lead-in wire parallel to each other, the electromagnetic force of Xing Chenging causes lead-in wire aging easily thus; The stray inductance of lead key closing process is very big, can bring higher switch overvoltage to device, forms switch stress; Lead-in wire itself is very thin, generally adopts the planar package structure again, and heat transfer property is good inadequately; The lead-in wire with silicon chip as different materials, the difference of the two thermal coefficient of expansion can produce thermal stress or the like.All kinds of salient point array ball bonding technologies of development in recent years are greatly improved situation.But the large-power semiconductor power device of commercial Application such as controllable silicon, GTO have very big area; each tube core diameter is often greater than 50mm; important is not, and to drive various functional intellectualities such as protection integrated; but the stray inductance of the input and output of power device lead-in wire itself; the thermal resistance of device, inner thermal stress.The interconnection process that the conventional electric power electronic device adopts mainly contains bonding and crimping dual mode.The former is applicable to that current capacity is the device of 50～600A, because technical maturity, cost are low, uses comparatively extensive; The latter is applicable to that electric current surpasses the device of 500～3000A.Yet these two kinds of interconnection modes all have very big defective, and the dead resistance of thermal resistance, thermal stress, power lead and inductance are key points in design, also are maximum problem places.The bonding mode is the influence that reduces thermal stress, is everlasting to add molybdenum sheet between silicon chip and conductive substrates, has increased thermal resistance, resistance, and cost, thermal stress does not have thoroughly yet to be eliminated.The defective of crimping mode is mainly reflected in the requirement of part evenness such as tube core, briquetting, base plate very high, otherwise the contact heat resistance of module is increased, and can damage chip, makes chip cracked when serious; Guarantee to apply suitable pressure, pressure is excessive, can damage chip; Pressure is too small, not only makes peak forward drop, thermal resistance increase, and can make this two parameter instabilities; Because thermal stress can make the bigger plastic deformations of securing member generation such as spring leaf, and the pressure that is added on the chip is changed, and causes peak forward drop and thermal resistance instability; Complex process equipment, cost, the more chip that easily causes of part stains in the height, shell.Therefore, low parasitic parameter, high-performance, can effectively conduct heat, the novel package structure and the interconnection mode of high reliability become the subject matter of studying in the technology.
The heat radiation of power device mainly contains air cooling, three kinds of modes of water cooling and evaporative cooling.Along with the increase of power density, dynamical evaporative cooling more and more causes people's attention in recent years, has carried out a large amount of research.Disclose gravity circulating and evaporating cooling technology scheme as Chinese patent 200910157264.7,200910009142.3, made the encapsulation of semiconductor power device not only have better thermal conduction characteristic, and be suitable for the printed board assembling.But do not connect certainly this major issue of thermal stress of device.
Summary of the invention
The object of the present invention is to provide a technical scheme that overcomes the above problems.
In order to solve these problems of the prior art, technical scheme provided by the invention is as follows:
A kind of gravity circulation evaporation cooling semiconductor device package, comprise the shell that constitutes the evaporation chamber, the sealing resin of component pipe core in the chamber and periphery, component pipe core in the chamber comprises semiconductor chip, tabular lead-out wire is characterized in that described semiconductor chip is connected by the array flexible welding column with tabular lead-out wire, described flexible welding column is combined by fine wire, cross section circle or rounded square are preferred, two end faces form metal-cured thin layer by fusion or welding, thickness serves as preferred with 0.2 to 0.6 millimeter, metal by conduction and good heat conductivity is made preferably copper or copper alloy.When area of chip excessive, for example diameter is greater than 20 millimeters, can make two parallel end faces of flexible welding column and cylinder out of plumb, make welding column and semiconductor chip, tabular lead-out wire weld the back out of plumb, deviation angle serves as preferred with the 5-15 degree, the direction that departs from at the center of semiconductor chip vertical line be in the face of cylinder of center line along the same direction of circumference, two are preferred in the face of being called, so just can make the flexible little rotation that changes chip into of heat, further reduce thermal stress.
The semiconductor power device tube core that the flat board that is welded goes between is preferred with the vertical direction, helps the up of steam bubble, and its dull and stereotyped lead-in wire is drawn by seal chamber vaporization chamber side, by compressing and resin-sealed whole cooling system.
Beneficial effect of the present invention
Technical solution of the present invention adopts the array flexible welding column to connect, the semiconductor packages that gravity circulating and evaporating cooling principle dispels the heat, structurally, the semiconductor element of technical scheme of the present invention is upright to directly being contained in the vaporization chamber, not only realized best heat transmission, and assembling is compact, has more reduced the thermal and mechanical stress in the device, has improved the life-span.The further miniaturization of device, the printed board that is more conducive to product on the structure is assembled.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is that embodiment of the invention array flexible welding column connects evaporation cooling semiconductor device encapsulation structure schematic diagram;
Fig. 2 is the flexible welding column schematic diagram of the embodiment of the invention;
Fig. 3 is the flexible welding column schematic diagram of two end faces of the embodiment of the invention and cylinder out of plumb;
Fig. 4 is two end faces of the present invention and the flexible welding column of cylinder out of plumb and semiconductor chip and the local schematic diagram that amplifies of tabular lead assembling mechanism;
Fig. 5 is two end faces of the present invention and the flexible welding column of cylinder out of plumb and semiconductor chip and tabular lead assembling mechanism side perspective schematic diagram.
Wherein, among Fig. 1,1 is packed semiconductor power device tube core, and 2 is tabular lead-out wire, and 3 is the vaporization chamber side plate, 4 is insulating material, and 5 are the control lead-out wire, and 6 is encapsulating resin, and 7 is the liquid coolant import, 8 is refrigerant passage, and 9 seal for chip passivation, and 10 is the refrigerant through hole, and 11 is flexible welding column.Among Fig. 2, the sealing metal layer that 1 is flexible welding column end face is formed by welding or welding, 2 for cross section be the wire bundle of circle or round.Among Fig. 3, the sealing metal layer that 1 is flexible welding column end face is formed by welding or welding, 2 for cross section be the wire bundle of circle or round.Among Fig. 4,1 is packed semiconductor device die, and 2 is tabular lead-out wire, and 3 is flexible welding column, and 4 seal for chip passivation, and 5 are the control lead-out wire.Among Fig. 5,1 is packed semiconductor device die, and 2 is tabular lead-out wire, and 3 is flexible welding column, and 4 is the central point of packed semiconductor device chip.
Embodiment
For the technical scheme of more detailed statement foregoing invention, the following inventor lists specific embodiment and comes the explanation technology; It is emphasized that these embodiment are used to the present invention is described and do not limit the scope of the invention.
Embodiment array flexible welding column connects the evaporation cooling semiconductor device package.
As shown in Figure 1, this gravity circulation evaporation cooling semiconductor device package comprises packed semiconductor device die 1, lead-out wire 2, vaporization chamber side plate 3, insulating material 4, control lead-out wire 5, encapsulating resin 6, liquid coolant import 7, refrigerant passage 8, chip passivation seals 9, refrigerant through hole 10, flexible welding column 11.An end face of flexible welding column 11 be welded in semiconductor device die 1 by evaporation or the low-priced metal ohmic contact that technology forms or the metal surface of Schottky joint such as penetrate, other end and tabular lead-out wire 2 weld.A plurality of tube cores can be assemblied in the same vaporization chamber, and can shared tabular lead-out wire.The sidewall that tabular lead-out wire 2 passes vaporization chamber is drawn, and high-power device can be beneficial to sealing by complete the drawing of 4 peripheries, also can all be drawn by the bottom surface, is beneficial to the circuit board assembling.Control lead-in wire 5 can directly be drawn by the outer surface of semiconductor power device tube core 1, and outer encapsulating resin 6 is fixed, or draws with the metal polar plate that wire bonding is fixed in the vaporization chamber to insulation.The peak of sealing vaporization chamber is furnished with refrigerant passage 8, when the caloric value of device when not being very big, article one, refrigerant passage can be done refrigerant steam bubble data feedback channel and refrigerant liquid down going channel simultaneously, when the caloric value of device is very big, at the bottom of vaporization chamber special configuration refrigerant fluid passage 7.
As shown in Figure 2, thin wire diameter serves as preferred with the 0.05-0.2 millimeter, being combined into cross section is that circle or rounded square are preferred, length is preferred for the 1-5 millimeter, it serves as preferred that two end faces form complete thin metal layer with plasma or laser welding, thickness serves as preferred with the 0.2-0.6 millimeter, also can be formed by welding.
Excessive when area of chip, for example diameter is greater than 20 millimeters, can make two parallel end faces of flexible welding column and cylinder out of plumb, as shown in Figure 3, makes welding column and semiconductor chip, tabular lead-out wire welding back out of plumb, and deviation angle serves as preferred with the 5-15 degree.As shown in Figure 4, the direction that departs from is preferred in the face of being called with two.As shown in Figure 5, in the center of semiconductor chip vertical line is the face of cylinder of center line along the same direction of circumference, so just can make the flexible little rotation that changes chip into of heat, further reduce thermal stress.
In the welding process of flexible welding column and chip and lead-in wire, avoid weld metal liquid to immerse the mid portion of flexible welding column, can utilize solder resist in case of necessity.Although the gap between flexible welding column is very little, should be fully enough to the circulation of evaporative cooling medium liquid and steam bubble, the heat of chip generation sees through passivating film heating refrigerant like this, by flexible welding column conduction heating refrigerant, be transmitted to the leading wire heating refrigerant, thermal resistance is minimum, and the temperature rise meeting of chip is very low.
Realize the welding of semiconductor chip and lead-in wire by using flexible welding column, well eliminate the influence of thermal stress, transpiration-cooled method, adopt gravity circulation theory advantages of simplicity and high efficiency that the heat of various high power semi-conductor power devices is directly derived, vertical encapsulating structure has increased packaging density, is convenient to the refrigerant circulation, has not only solved the technical barrier of heat radiation, and reduced volume, weight, made it to be adapted to the printed board assembling.Those of ordinary skills are according to content of the present invention; and the embodiment that provides above; select decision according to the demand of reality, in every case based on the combination of several modes in the rights protection scope of the present invention and do not break away from that claim aim of the present invention changes all should be within protection scope of the present invention.
Claims (3)
1. evaporation cooling semiconductor device package, especially a kind of array welding column connects the encapsulation of evaporative cooling discrete semiconductor power device, comprise the shell that constitutes the evaporation chamber, the sealing resin of component pipe core in the chamber and periphery, component pipe core in the chamber comprises semiconductor chip, tabular lead-out wire is characterized in that described semiconductor chip is connected by the array flexible welding column with tabular lead-out wire, described flexible welding column is combined by fine wire, cross section circle or rounded square are preferred, two end faces form the curing metal thin layer by fusion or welding, and thickness serves as preferred with 0.2 to 0.6 millimeter;
2. array flexible welding column according to claim 1 connects the evaporation cooling semiconductor device package, it is characterized in that described flexible welding column makes preferably copper or copper alloy by conduction and heat conductivility good metal;
3. array flexible welding column according to claim 1 connects the encapsulation of evaporative cooling discrete semiconductor power device, it is characterized in that two end faces and cylinder out of plumb that described flexible welding column is parallel, make welding column and semiconductor chip, tabular lead-out wire weld the back out of plumb, deviation angle serves as preferred with the 5-15 degree, the direction that departs from at the center of semiconductor chip vertical line be in the face of cylinder of center line along the same direction of circumference, two are preferred in the face of being called.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101580094A CN101958297A (en) | 2009-07-16 | 2009-07-16 | Array flexible welding stud-connected and evaporation-cooled semiconductor device package |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101580094A CN101958297A (en) | 2009-07-16 | 2009-07-16 | Array flexible welding stud-connected and evaporation-cooled semiconductor device package |
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| CN101958297A true CN101958297A (en) | 2011-01-26 |
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| CN2009101580094A Pending CN101958297A (en) | 2009-07-16 | 2009-07-16 | Array flexible welding stud-connected and evaporation-cooled semiconductor device package |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068142A2 (en) * | 1981-06-30 | 1983-01-05 | International Business Machines Corporation | Gas cooled modules for electrical components |
| CN1391703A (en) * | 1999-09-20 | 2003-01-15 | 艾利森电话股份有限公司 | Semiconductor chip having bond pad located on active device |
| CN1502130A (en) * | 2000-12-19 | 2004-06-02 | ���﹫˾ | Electronic device using evaporative micro-cooling and associated methods |
| CN1851908A (en) * | 2006-05-22 | 2006-10-25 | 中国科学院电工研究所 | Power semi-conductor device evaporation cooling apparatus |
| CN101055858A (en) * | 2006-04-10 | 2007-10-17 | 联华电子股份有限公司 | Semiconductor encapsulation structure |
-
2009
- 2009-07-16 CN CN2009101580094A patent/CN101958297A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068142A2 (en) * | 1981-06-30 | 1983-01-05 | International Business Machines Corporation | Gas cooled modules for electrical components |
| CN1391703A (en) * | 1999-09-20 | 2003-01-15 | 艾利森电话股份有限公司 | Semiconductor chip having bond pad located on active device |
| CN1502130A (en) * | 2000-12-19 | 2004-06-02 | ���﹫˾ | Electronic device using evaporative micro-cooling and associated methods |
| CN101055858A (en) * | 2006-04-10 | 2007-10-17 | 联华电子股份有限公司 | Semiconductor encapsulation structure |
| CN1851908A (en) * | 2006-05-22 | 2006-10-25 | 中国科学院电工研究所 | Power semi-conductor device evaporation cooling apparatus |
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Application publication date: 20110126 |