CN101957562B - Double-exposure method - Google Patents
Double-exposure method Download PDFInfo
- Publication number
- CN101957562B CN101957562B CN 201010265032 CN201010265032A CN101957562B CN 101957562 B CN101957562 B CN 101957562B CN 201010265032 CN201010265032 CN 201010265032 CN 201010265032 A CN201010265032 A CN 201010265032A CN 101957562 B CN101957562 B CN 101957562B
- Authority
- CN
- China
- Prior art keywords
- mask
- bed
- wafer
- silicon chip
- supporting platform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a double-exposure aligned scanning exposure method, which comprises the following steps of: (1) forming a primary optical axis through a projection lens by using a light source; (2) putting a first mask plate and a second mask plate on a plate bearing platform; (3) aligning the mask plates; (4) performing off-axis silicon chip alignment, and putting a silicon chip on a chip bearing platform; (5) moving the silicon chip to the position of the primary optical axis; (6) driving the first mask plate to move to the position of the primary optical axis by using the plate bearing platform, and exposing and imaging the figures of the first mask plate on the silicon chip; and (7) driving the second mask plate to move to the position of the primary optical axis by using the plate bearing platform, and exposing and imaging the figures of the second mask plate on the silicon chip. The two different mask plates are independently exposed on the same glued layer in turn by using the mask plate bearing platform, and the double-exposure technology can decompose a two-dimensional figure into two one-dimensional figures generated more easily and accurately.
Description
The application is that application number is 200910048281.7, and the applying date is 2009-3-26, and denomination of invention is divided an application for " mask-plate bearing bed and lithographic equipment thereof and double-exposure method ".
Technical field
The present invention relates to the manufacture of semiconductor field, particularly a kind of mask-plate bearing bed and lithographic equipment and double-exposure method that is used for double-exposure technology.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of IC or other microdevice.Through lithographic equipment, the multilayer mask with different mask patterns is imaged on the wafer that is coated with photoresist under accurately aiming at successively, for example semiconductor wafer or LCD plate.Lithographic equipment is divided into two types substantially; One type is the stepping lithographic equipment; The mask pattern single exposure is imaged on an exposure area of wafer, and wafer moves with respect to mask subsequently, and next exposure area is moved to mask pattern and projection objective below; Again mask pattern is made public in another exposure area of wafer, repeat the picture that this process all exposure areas on wafer all have mask pattern.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not single exposure imaging, but the scanning mobile imaging through the projection light field.In the mask pattern imaging process, mask and wafer move with respect to optical projection system and projected light beam simultaneously.
At present, lithographic equipment adopts the mode of changing a mask behind every batch of silicon wafer exposure mostly, promptly after corresponding a collection of silicon wafer exposure of mask pattern, changes another mask pattern again, one deck circuit on the corresponding integrated circuit of each mask pattern.But, the unusual difficulty of the preparation of mask under the big or great situation of density of the difference of pattern on one deck.See also Fig. 1, it is depicted as the figure that silicon wafer exposure forms in the prior art.The design lines of L type that on silicon chip, develop, if adopt the completion that makes public separately of a mask, then formed figure has fillet in L corner and produces, and influences the lines quality.
Summary of the invention
The present invention be intended to solve in the prior art owing to single exposure owing to the imaging that reason caused of the complexity of figure and density problem accurately not.
In view of this, the present invention provides a kind of method of double-exposure alignment scanning exposure, may further comprise the steps: (1) utilizes light source to pass through projection lens and forms primary optical axis; (2) first mask and second mask are placed on hold on the bed; (3) carrying out said mask aims at; (4) leave the axle silicon chip and aim at, silicon chip is placed on the wafer-supporting platform; (5) said silicon chip is moved to said primary optical axis position; (6) utilize the said bed that holds to drive said first mask and move to said primary optical axis position, the graph exposure of first mask is imaged on the said silicon chip; (7) utilize the said bed that holds to drive said second mask and move to said primary optical axis position, the graph exposure of second mask is imaged on the said silicon chip.
Further, said step (3) specifically comprises: hold fixed alignment mark on the bed said, said first mask and second mask are provided with mark, on said wafer-supporting platform, are fixed with reference mark; Said wafer-supporting platform is moved to design attitude in advance, move the said bed that holds, said alignment mark is aimed at said reference mark, and noted the said coordinate of bed and the primary importance coordinate of said wafer-supporting platform of holding along first direction of scanning; Set up said relation of holding between bed and the said reference mark; Move the said bed that holds along first direction of scanning, the said first mask mark is aimed at said reference mark; Move the said bed that holds along first direction of scanning, the said second mask mark is aimed at said reference mark; Set up said coordinate relation of holding between bed, said first mask and second mask, the said reference mark.
Further, said step (4) specifically comprises: said wafer-supporting platform is moved under the off-axis alignment system, the reference marker in the said off-axis alignment system is overlapped with the reference mark of said wafer-supporting platform; Write down the second place coordinate of said wafer-supporting platform; Set up the coordinate relation between said reference mark and the said reference marker; First and second position coordinates of the said wafer-supporting platform that passes through to be write down calculates the optical axis of said off-axis alignment system and the distance between the said primary optical axis; Described distance as baseline, is set up said wafer-supporting platform and said coordinate relation of holding between the bed.Utilize said wafer-supporting platform said silicon chip to be transported in the aligning scope of said off-axis alignment system; The reference marker of said off-axis alignment system is aimed at said silicon chip mark; Set up the relation between the reference mark of said silicon chip and said wafer-supporting platform.
In sum; The technology of the double-exposure that the present invention adopted; Utilize the mask-plate bearing bed that two different masks are independently made public respectively on same rubberised layer successively; Double exposure techniques can be decomposed into the pattern of two dimension two one dimension patterns that generate more easily, make the precision of minimum feature size of the mask graph that comprises various characteristics create reality, and this mask-plate bearing bed can be installed in the lithographic system.
Description of drawings
Shown in Figure 1 is the figure that silicon wafer exposure forms in the prior art;
Shown in Figure 2 is mask-plate bearing bed structural representation in one embodiment of the invention;
Shown in Figure 3 is mask-plate bearing bed position probing synoptic diagram in one embodiment of the invention;
Shown in Figure 4 is the drive controlling synoptic diagram of the mask-plate bearing bed in one embodiment of the invention;
The structural representation of the double-exposure lithographic equipment that provides for one embodiment of the invention shown in Figure 5;
The process flow diagram of the double-exposure method that provides for one embodiment of the invention shown in Figure 6.
Embodiment
For making the object of the invention, characteristic more obviously understandable, provide preferred embodiment and combine accompanying drawing, the present invention is described further.
One embodiment of the invention provides the mask-plate bearing bed that two masks can be installed simultaneously, sees also Fig. 2, and it is depicted as the structural representation of mask-plate bearing bed.This mask-plate bearing bed 200 comprises:
The first mask installation position 211 and the second mask installation position 212; Be arranged on the said mask retainer 210; Mask A (4) and mask B (5) can be installed on those mask installation positions simultaneously; The size structure of two installation positions is identical, and two the mask A (4) that therefore install simultaneously are also identical with the physical dimension of mask B (5).Two masks are unexpected in the course of the work to be bumped against or because of the slip that clamps not strongly solid generation even fly out, the mask installation position is two square grooves that are lower than mask retainer 210 upper surfaces in order to avoid.
Marked version installation position 240 is arranged at said mask retainer 210 centre positions, is used for adjustment notch version 250.
A plurality of mask vacuum suction grooves 230 are arranged at respectively in the said first mask installation position 211 and the second mask installation position 212, in order to absorption permanent mask version.In practical application, also can install mask fixing frame 220 additional, with the auxiliary fixing mask.
In order to guarantee the impermeability of vacuum suction groove 230, said mask-plate bearing bed also comprises pore plug 231, to seal the gas circuit fabrication hole 232 on the said mask retainer 210.Mask passes through vacuum suction on vacuum suction groove 230 through aiming at the back; There is complete gas circuit design mask-plate bearing bed 200 inside; In the process of processing gas circuit a lot of gas circuit fabrication holes 232 are arranged, the gas circuit fabrication hole is sealed, guarantee the impermeability of vacuum suction groove 230.
Prism of corner cube installation position 260 is arranged at a side of said mask retainer 210, is used for established angle cone prism 270, to measure the position of mask.
Catoptron plated film face 280 is positioned at a side of said mask retainer 210.
The 260 established angle cone prisms 270 in the prism of corner cube installation position of mask retainer, and provide prism of corner cube fixed head installation position 261.Mask retainer side plated film forms catoptron plated film face 280.Prism of corner cube 270 receives the light beam that laser interferometer is sent respectively with catoptron plated film face 280, realizes the position measurement to mask.The detailed measurements method sees also Fig. 3; The Y of mask-plate bearing bed 200 is following to displacement measurement; The light beam that light source sends is radiated on the prism of corner cube 270 through forming two- beam 301 and 302 behind the optical-mechanical system, the folded light beam of prism of corner cube 270, and Y is to the two-frequency laser interferometer measuring system for process; Calculate mask Y to displacement, precision can reach 1.2nm; Calculate mask Rz simultaneously to rotation.The X of mask-plate bearing bed 200 is following to displacement measurement; The light beam that light source sends is divided into 3 bundle light 303 through optical device and is radiated on the catoptron plated film face 280; 3 bundle light become isosceles triangle; Through the reflection of catoptron plated film face 280, calculate mask X to displacement by X to the laser interferometer reception, precision can reach 0.6nm; Calculate mask Ry simultaneously to rotation.Thereby realize accurate measurement to the position of mask.
Fine motion motor installation position 290 is arranged on the said mask retainer, is used to install motor.The motion of mask-plate bearing bed can form 6DOF motion or 3DOF motion according to the different motor type of drive.
Referring to Fig. 4, enumerating embodiment is example with the 3DOF, but is not limited in this structure.Mask-plate bearing bed 200 also can be in fine motion motor installation position 290 be installed the fine motion motors, in order to adjust the motion of said mask-plate bearing bed.Said fine motion motor comprises: linear electric motors, and voice coil motor.Mask-plate bearing bed X is realized by linear electric motors 410 (X_Motor) to driving.Linear motor rotor 411 (X_Motor_1) is connected on the mask retainer 210.Mask-plate bearing bed Y is to driving with Rz to driving by two voice coil motor 420,430 (Y_Motor_R; Y_Motor_L) realize.Voice coil motor mover 421,431 (Y_Motor_R_1; Y_Motor_L_1) be installed on the mask retainer 210.When two voice coil motors 420,430 (Y_Motor) when being synchronized with the movement, mask along Y to moving, when the asynchronous motion of two voice coil motors 420,430 (Y_Motor), mask along Rz to moving.Realized the motion of 3 degree of freedom of mask thus.
This mask-plate bearing bed can be applied to lithographic system, litho machine system for example, but be not limited in this system.
Referring to Fig. 6, one embodiment of the invention provides a kind of method of double-exposure, may further comprise the steps: S610 utilizes light source to pass through projection lens and forms primary optical axis; S620 is placed on first mask and second mask and holds on the bed; S630 carries out mask and aims at; S640 leaves the axle silicon chip and aims at, and silicon chip is placed on the wafer-supporting platform; S650 moves to said primary optical axis position with said silicon chip; S660 utilizes the said bed that holds to drive said first mask and move to said primary optical axis position, and the graph exposure of first mask is imaged on the said silicon chip; S670 utilizes the said bed that holds to drive said second mask and move to said primary optical axis position, and the graph exposure of second mask is imaged on the said silicon chip.
See also Fig. 5, it is depicted as the structural representation of the double-exposure lithographic equipment that one embodiment of the invention provides
This lithographic equipment comprises: the illuminator 500 that radiation beam is provided; Radiation laser beam is projected to the optical projection system 520 of substrate target location; The Workpiece platform structure that is used to support the mask-plate bearing bed 510 of mask equipment and is used for support base.It is identical that the detailed structure of said mask-plate bearing bed 510 and preceding text are described, and sees also Fig. 2 to Fig. 4.
It is following to utilize this lithographic equipment to carry out the concrete steps of double-exposure:
Utilize illuminator 500 that stable light source is provided, the light that illuminator 500 is sent forms primary optical axis 501 through throwing optical projection system 520.Pattern on the mask can dwindle certain proportion through optical projection system 520 and be imaged on the silicon chip 530, to realize exposure.
With mask 540, mask 550 is placed on simultaneously and holds on the bed 510.
Next carries out mask and aims at.Hold and be fixed with mask alignment mark 512 on the bed 510, all be designed with mark 541,551 on mask 540, the mask 550.The Workpiece platform structure of support base: be fixed with reference mark 570 on the wafer-supporting platform 590.
The light that illuminator 500 is sent forms primary optical axis 501 through throwing optical projection system 520.Earlier wafer-supporting platform 590 is moved to design attitude in advance; Y holds bed 510 to moving along the direction of scanning; Through alignment system, detect reference mark 570 and mask mark 512 in the laser interferometer system 511 above holding bed 510 simultaneously, mask mark 512 is aimed at reference mark 570.That notes that laser interferometer system measures holds bed 510, the position coordinates y1 of wafer-supporting platform 590.Set up the relation of holding between bed 510 and the reference mark 570.Y holds bed 510 to moving along the direction of scanning, through alignment system, the mark 541 of mask 540 is aimed at reference mark 570.Y holds bed 510 to moving along the direction of scanning, through alignment system, the mark 551 of mask 550 is aimed at reference mark 570.So just set up hold bed 510, mask 540, mask 550, and reference mark 570 between the coordinate relation.
Leaving the axle silicon chip then aims at.From axle silicon chip alignment system 580, be fixed on outside the projection lens, be designed with reference marker 581 in the off-axis alignment system.
Move wafer-supporting platform 590; Arrive off-axis alignment system 580 times; Adjustment wafer-supporting platform 590 positions make the reference marker 581 in the off-axis alignment system overlap the coordinate position y2 of the wafer-supporting platform 590 that the recording laser interferometer system is measured with reference mark 570 imagings; Set up reference mark 570, and the relation of the coordinate between the reference marker 581.The coordinate position y1 of the wafer-supporting platform 590 that passes through to be write down, the optical axis 582 that y2 can calculate off-axis alignment system 580, and between the primary optical axis 501 of projection lens apart from BL, BL is also referred to as baseline.Through baseline BL, can set up wafer-supporting platform 590 and hold the coordinate relation between the bed 510.
Utilize mechanical arm from film magazine, to take out silicon chip 530 then, be installed on the wafer-supporting platform 590 through transmission system.Wafer-supporting platform 590 is transported to silicon chip 530 in the aligning scope of off-axis alignment system 580, through off-axis alignment system 580, reference marker 581 is aimed at silicon chip mark 531, sets up the relation between silicon chip 530 and the reference mark 570.
Above alignment procedures through reference coordinate 570 indirect set up mask 540, mask 550, and silicon chip 530 between the coordinate relation.Y is to the primary optical axis that moves to projection lens 501 positions along the direction of scanning to hold bed 510 drive masks 540, and wafer-supporting platform 590 drives primary optical axis 501 positions that silicon chips 530 move to projection lens, makes public.With the figure on the mask 540, make public to silicon chip 530.The direction of scanning be Y to, step direction be X to.The graph exposure of mask 540 is accomplished.
Hold bed 510 and drive primary optical axis 501 positions that masks 550 move to projection lens, the graph exposure of mask 550 is imaged on the silicon chip 530.
In sum; The technology of the double-exposure that the present invention adopted; Utilize the mask-plate bearing bed that two different masks are independently made public respectively on same rubberised layer successively; Double exposure techniques can be decomposed into the pattern of two dimension two one dimension patterns that generate more easily, makes the precision of minimum feature size of the mask graph that comprises various characteristics create reality.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limiting the present invention, anyly is familiar with this operator, do not breaking away from the spirit and scope of the present invention; When can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (2)
1. a double-exposure method is characterized in that, may further comprise the steps:
(1) utilizes light source to pass through projection lens and form primary optical axis;
(2) first mask and second mask are placed on hold on the bed;
(3) carrying out said mask aims at;
(4) leave the axle silicon chip and aim at, silicon chip is placed on the wafer-supporting platform;
(5) said silicon chip is moved to said primary optical axis position;
(6) utilize the said bed that holds to drive said first mask and move to said primary optical axis position, the graph exposure of first mask is imaged on the said silicon chip; And
(7) utilize the said bed that holds to drive said second mask and move to said primary optical axis position, the graph exposure of second mask is imaged on the said silicon chip;
Said step (3) specifically may further comprise the steps:
Hold fixed alignment mark on the bed said, said first mask and second mask are provided with mark, on said wafer-supporting platform, are fixed with reference mark;
Said wafer-supporting platform is moved to design attitude in advance, move the said bed that holds, said alignment mark is aimed at said reference mark, and noted the said coordinate of bed and the primary importance coordinate of said wafer-supporting platform of holding along first direction of scanning;
Set up said relation of holding between bed and the said reference mark;
Move the said bed that holds along first direction of scanning, the said first mask mark is aimed at said reference mark;
Move the said bed that holds along first direction of scanning, the said second mask mark is aimed at said reference mark; And
Set up said coordinate relation of holding between bed, said first mask and second mask, the said reference mark.
2. double-exposure method according to claim 1 is characterized in that, said step (4) specifically may further comprise the steps:
Said wafer-supporting platform is moved under the off-axis alignment system, the reference marker in the said off-axis alignment system is overlapped with the reference mark of said wafer-supporting platform;
Write down the second place coordinate of said wafer-supporting platform;
Set up the coordinate relation between said reference mark and the said reference marker;
First and second position coordinates of the said wafer-supporting platform that passes through to be write down calculates the optical axis of said off-axis alignment system and the distance between the said primary optical axis;
Described distance as baseline, is set up said wafer-supporting platform and said coordinate relation of holding between the bed;
Utilize said wafer-supporting platform said silicon chip to be transported in the aligning scope of said off-axis alignment system;
The reference marker of said off-axis alignment system is aimed at said silicon chip mark; And
Set up the relation between the reference mark of said silicon chip and said wafer-supporting platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010265032 CN101957562B (en) | 2009-03-26 | 2009-03-26 | Double-exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010265032 CN101957562B (en) | 2009-03-26 | 2009-03-26 | Double-exposure method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100482817A Division CN101526754B (en) | 2009-03-26 | 2009-03-26 | Mask-plate bearing bed and photo-etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101957562A CN101957562A (en) | 2011-01-26 |
| CN101957562B true CN101957562B (en) | 2012-11-14 |
Family
ID=43484966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010265032 Active CN101957562B (en) | 2009-03-26 | 2009-03-26 | Double-exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101957562B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692820B (en) * | 2011-03-21 | 2014-12-17 | 上海微电子装备有限公司 | Device and method for measuring projection lens distortion |
| CN102799081A (en) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
| CN104597721B (en) * | 2015-01-20 | 2016-09-21 | 中国科学院上海光学精密机械研究所 | Ultraviolet photolithographic two-dimensional stage |
| CN110727169B (en) * | 2018-07-17 | 2021-04-06 | 上海微电子装备（集团）股份有限公司 | Mask device, exposure equipment and exposure method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474960A (en) * | 2001-05-18 | 2004-02-11 | �ʼҷ����ֵ�������˾ | Lithographic method of manufacturing device |
| US6934008B2 (en) * | 2002-01-28 | 2005-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple mask step and scan aligner |
-
2009
- 2009-03-26 CN CN 201010265032 patent/CN101957562B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474960A (en) * | 2001-05-18 | 2004-02-11 | �ʼҷ����ֵ�������˾ | Lithographic method of manufacturing device |
| US6934008B2 (en) * | 2002-01-28 | 2005-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple mask step and scan aligner |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101957562A (en) | 2011-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101526754B (en) | Mask-plate bearing bed and photo-etching device | |
| US10401733B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| US6894763B2 (en) | Exposure apparatus and methods utilizing plural mask and object stages movable in opposite directions, and methods of producing devices using the same | |
| JP5489068B2 (en) | POSITION MEASUREMENT SYSTEM, EXPOSURE APPARATUS, POSITION MEASUREMENT METHOD, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, TOOL AND MEASUREMENT METHOD | |
| US9821469B2 (en) | Carrier system, exposure apparatus, carrier method, exposure method, device manufacturing method, and suction device | |
| CN102017072A (en) | Stage apparatus, patterning apparatus, exposure apparatus, stage drive apparatus, exposure method, and device fabrication method | |
| US10678152B2 (en) | Layout method, mark detection method, exposure method, measurement device, exposure apparatus, and device manufacturing method | |
| US9915878B2 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP2004072076A (en) | Exposure device, stage unit and method for manufacturing device | |
| JP2006186377A (en) | Method and system for three-dimensional alignment for wafer scale integration | |
| CN104838469A (en) | Exposure device and exposure method, and device-manufacturing method | |
| JP2011238707A (en) | Exposure device, exposure method, and device manufacturing method | |
| KR101651447B1 (en) | Quantitative reticle distortion measurement system | |
| JP4164414B2 (en) | Stage equipment | |
| CN101957562B (en) | Double-exposure method | |
| WO2007097350A1 (en) | Position measuring device and position measuring method, mobile body driving system and mobile body driving method, pattern forming device and pattern forming method, exposure device and exposure method, and device manufacturing method | |
| JPH10223528A (en) | Projection aligner and aligning method | |
| JP3719965B2 (en) | Alignment apparatus and alignment method | |
| JP5692949B2 (en) | Exposure equipment | |
| JPH09223650A (en) | Aligner | |
| JP2006226719A (en) | Surface shape measuring method, attitude measuring method, and exposure method | |
| CN1577103A (en) | Lithographic apparatus and integrated circuit manufacturing method | |
| JP2011258922A (en) | Exposure equipment and exposure method, and method of manufacturing device | |
| JP2006203137A (en) | Positioning method, stage device and exposure device | |
| JP6102230B2 (en) | Exposure apparatus, exposure method, and device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 1525 Zhang Dong Road, Shanghai, No. 201203 Co-patentee after: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 1525 Zhang Dong Road, Shanghai, No. 201203 Co-patentee before: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |