CN101957528A - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN101957528A CN101957528A CN2009100889255A CN200910088925A CN101957528A CN 101957528 A CN101957528 A CN 101957528A CN 2009100889255 A CN2009100889255 A CN 2009100889255A CN 200910088925 A CN200910088925 A CN 200910088925A CN 101957528 A CN101957528 A CN 101957528A
- Authority
- CN
- China
- Prior art keywords
- tft
- photoresist
- grid line
- data line
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 4
- 238000002955 isolation Methods 0.000 claims abstract description 87
- 239000000203 mixture Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 76
- 238000005516 engineering process Methods 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 67
- 238000002161 passivation Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000002207 thermal evaporation Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 239000007792 gaseous phase Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 10
- 238000010276 construction Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910088925 CN101957528B (zh) | 2009-07-14 | 2009-07-14 | Tft-lcd阵列基板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910088925 CN101957528B (zh) | 2009-07-14 | 2009-07-14 | Tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101957528A true CN101957528A (zh) | 2011-01-26 |
CN101957528B CN101957528B (zh) | 2013-02-13 |
Family
ID=43484945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910088925 Expired - Fee Related CN101957528B (zh) | 2009-07-14 | 2009-07-14 | Tft-lcd阵列基板及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101957528B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629573A (zh) * | 2011-07-11 | 2012-08-08 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器阵列基板及制作方法 |
CN110265410A (zh) * | 2019-06-21 | 2019-09-20 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法,以及显示面板和显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1854848A (zh) * | 2005-04-25 | 2006-11-01 | 三星电子株式会社 | 滤色器屏板及其制造方法和透射反射型液晶显示器 |
US20060285029A1 (en) * | 2005-06-17 | 2006-12-21 | Lg.Philips Lcd Co., Ltd. | Array substrate for liquid crystal display device, method of fabricating the same, and repairing method thereof |
CN101060100A (zh) * | 2006-04-21 | 2007-10-24 | 群康科技(深圳)有限公司 | 薄膜晶体管基板制造方法 |
CN101359108A (zh) * | 2007-07-31 | 2009-02-04 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器面板结构 |
CN101566770A (zh) * | 2008-04-24 | 2009-10-28 | 乐金显示有限公司 | 液晶显示设备的阵列基板及其制造方法 |
-
2009
- 2009-07-14 CN CN 200910088925 patent/CN101957528B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1854848A (zh) * | 2005-04-25 | 2006-11-01 | 三星电子株式会社 | 滤色器屏板及其制造方法和透射反射型液晶显示器 |
US20060285029A1 (en) * | 2005-06-17 | 2006-12-21 | Lg.Philips Lcd Co., Ltd. | Array substrate for liquid crystal display device, method of fabricating the same, and repairing method thereof |
CN101060100A (zh) * | 2006-04-21 | 2007-10-24 | 群康科技(深圳)有限公司 | 薄膜晶体管基板制造方法 |
CN101359108A (zh) * | 2007-07-31 | 2009-02-04 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器面板结构 |
CN101566770A (zh) * | 2008-04-24 | 2009-10-28 | 乐金显示有限公司 | 液晶显示设备的阵列基板及其制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629573A (zh) * | 2011-07-11 | 2012-08-08 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器阵列基板及制作方法 |
CN102629573B (zh) * | 2011-07-11 | 2014-03-12 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器阵列基板及制作方法 |
CN110265410A (zh) * | 2019-06-21 | 2019-09-20 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法,以及显示面板和显示装置 |
CN110265410B (zh) * | 2019-06-21 | 2021-12-14 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法,以及显示面板和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101957528B (zh) | 2013-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101957529B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN101957526B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102236179B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102156368A (zh) | 薄膜晶体管液晶显示阵列基板及其制造方法 | |
CN102023433B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN101630640B (zh) | 光刻胶毛刺边缘形成方法和tft-lcd阵列基板制造方法 | |
CN101685229B (zh) | 液晶显示器阵列基板的制造方法 | |
CN103439840B (zh) | 一种阵列基板、显示装置及阵列基板的制造方法 | |
CN101957527B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN102830560A (zh) | 一种阵列基板及其制作方法 | |
CN102148195A (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102945846B (zh) | 阵列基板及其制造方法、显示装置 | |
CN102629573B (zh) | 一种薄膜晶体管液晶显示器阵列基板及制作方法 | |
CN102637636A (zh) | 有机薄膜晶体管阵列基板及其制作方法和显示装置 | |
CN105097832B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN102012590A (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN101840117B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102054833B (zh) | 薄膜晶体管基板及其制造方法 | |
CN204028524U (zh) | 显示基板及显示装置 | |
CN101963726A (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN103700663B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN105390507A (zh) | Tft阵列基板的制备方法、阵列基板及显示装置 | |
CN101846857A (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN105575977B (zh) | 显示基板、制备方法及显示装置 | |
CN101957528B (zh) | Tft-lcd阵列基板及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150623 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20150623 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150623 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: K-TRONICS (SUZHOU) TECHNOLOGY Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130213 |