CN101945527A - Slab-type full-sealing low-temperature plasma excitation source based on DBD (Dielectric Barrier Discharge) technology - Google Patents

Slab-type full-sealing low-temperature plasma excitation source based on DBD (Dielectric Barrier Discharge) technology Download PDF

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Publication number
CN101945527A
CN101945527A CN201010288991XA CN201010288991A CN101945527A CN 101945527 A CN101945527 A CN 101945527A CN 201010288991X A CN201010288991X A CN 201010288991XA CN 201010288991 A CN201010288991 A CN 201010288991A CN 101945527 A CN101945527 A CN 101945527A
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slab
temperature plasma
excitation source
dbd
dielectric barrier
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CN201010288991XA
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Chinese (zh)
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武中臣
张鹏彦
陶琳
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Priority to CN201010288991XA priority Critical patent/CN101945527A/en
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Abstract

The invention relates to the technical field of a DBD (Dielectric Barrier Discharge) technology, in particular to a slab-type full-sealing low-temperature plasma excitation source based on the DBD technology. the slab-type full-sealing low-temperature plasma excitation source is characterized by being provided with two ceramic sheets which are adhered in parallel together to form a hollow discharge chamber, silver paper is respectively pasted to the ceramic sheets at the other sides of the hollow discharge chamber, and quartz window plates, air inlets and air outlets are respectively arranged on the periphery of the two pasted ceramic sheets. The invention improves the excitation efficiency by adopting a slab-type design and improves the thermal stability and the high-voltage-resistant characteristic of a device by adopting a high-pure Al2O3 ceramic slab as a dielectric material; the quartz window plates are used by the device to fully close the discharge chamber and isolate the atmosphere and used as the excitation source of an optical emission spectrometry system so that a target component is excited to generate characteristic spectral lines without being interfered by air background signals, therefore, the spectral information of the target component is enhanced, the detection sensitivity of the target component as well as the thermal stability and the high voltage-resistant characteristic of the device are improved, and the device works more stably.

Description

Dull and stereotyped hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology
Technical field
The present invention relates to dielectric barrier discharge (Dielectric-Barrier Discharge, DBD) technical field, specifically a kind of plate hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology.
Background technology
Based on the low temperature plasma excitaton source of dielectric barrier discharge technology, advantage such as have that working temperature is low, less energy consumption, volume are little very helps the miniaturization of instrument.The device of the type has become the analysis of environment trace contaminant as the excitaton source of atomic emission spectrum system, particularly the research focus of heavy metal analysis.But when working under the atmosphere condition, the DBD excitaton source has also excited airborne N when exciting target components 2And O 2(N particularly 2), the The atmospheric background signal of generation covers or has disturbed the feature exciting line of target substance, thereby has had influence on mechanism research and detection sensitivity to target components.N in the atmosphere that is ionized in addition 2And O 2Also can produce a large amount of high mars free radicals, cause and target components generation plasma chemical reaction, also be unfavorable for qualitative, quantitative analysis target components.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, provide a kind of and not only can eliminate the air ambient interferences, and can improve the plate hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology of target components detection sensitivity.
The present invention can reach by following measure.
A kind of dull and stereotyped hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology, it is characterized in that by two parallel hollow arc chambers that are bonded together and form of rectangle potsherd, be pasted with masking foil respectively as sparking electrode on the potsherd lateral surface of composition hollow arc chamber, the front end of hollow arc chamber seals with quartzy window, and air inlet is left in the rear end, exhaust outlet is left in the side.
Hollow arc chamber of the present invention is cuboid, quartzy window sticks on the front end of arc chamber, play printing opacity and isolated atmosphere, air inlet is located at the arc chamber rear end relative with quartzy window, can import carrier gas and target components easily, exhaust outlet is located on the side that is close to quartzy window, and the working gas after analyzing is discharged the DBD excitation chamber.
The present invention adopts high-purity Al 2O 3Earthenware slab has improved the thermal stability of device as dielectric material, has strengthened the high voltage withstanding ability of device, and plate design has also increased machining area, has improved launching efficiency; This device uses quartzy window complete closed arc chamber, completely cut off the atmosphere in the external environment, excitaton source as the optical emission spectroscopy system, hermetic DBD excitaton source excites target components to produce the interference that the feature exciting line no longer is subjected to the air background signal, strengthened the spectral information of target components, improved the detection sensitivity of target components, and the device more stable work.
Description of drawings.
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is that the A of Fig. 1 is to view.
Fig. 3 is that the B of Fig. 1 is to view.
Embodiment.
Below in conjunction with accompanying drawing the present invention is further described:
As shown in the figure, a kind of plate hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology, paste the long 40mm of masking foil 2(by two outsides, wide 10mm) potsherd 1 (long 50mm, wide 20mm, thick 1mm) parallel being bonded together forms hollow arc chamber (the long 40mm that thickness is 1mm, wide 10mm), wherein the minor face of front end is the light transmitting terminal, paste the long 20mm of quartzy window 3(at the light transmitting terminal, wide 3mm, thick 1mm) the hollow arc chamber and the ambient atmosphere that form is isolated, prevent that the low temperature plasma that arc chamber produces from exciting airborne N when applying the high-frequency and high-voltage ac signal 2And O 2Thereby the generation of interference signal and the chemical reaction of newly-generated nitrogen, oxygen radical and target components have been avoided, on the lateral surface of corresponding rear end face of transmitting terminal and contiguous transmitting terminal, leave air inlet and exhaust outlet 4 respectively, carrier gas (as Ar or He) is carried target components and is entered hollow arc chamber (excitation chamber) by air inlet, discharges arc chamber by the gas outlet again after finishing the exciting of target components.Spectrometer can be coupled into spectrometer with the signal of light transmitting terminal by means of fibre-optical probe, realizes that target excites the record and the analysis of characteristic spectrum.The edge spacing 5mm of the edge of masking foil electrode and potsherd is in order to prevent that two electrodes from directly puncturing atmosphere in the arc chamber side, can't finish exciting carrier gas in the arc chamber and component.
It is as follows that this invention is different from existing characteristic feature of an invention: (1) adopts plate design to increase machining area, has improved launching efficiency; (2) adopt high-purity Al2O 3Earthenware slab is dielectric material, has improved heat endurance and the high voltage withstanding characteristic of device, the instrument more stable work; (3) this device uses quartzy window complete closed arc chamber, has completely cut off ambient atmosphere, as the excitaton source of optical emission spectroscopy system, excites target components to produce the feature exciting line and disturbed by the air background signal, has improved the detection sensitivity of target components.
Advantage of the present invention is: the present invention adopts quartzy window, with DBD excitation chamber complete closed, has stoped the low temperature plasma of carrier gas (Ar or He) generation and contacting of ambient atmosphere. This invention has not only overcome airborne N2And O2Exciting line has improved the detection sensitivity of target components to the covering of target components feature exciting line, and has eliminated and excite N2And O2The living radical that produces and the reaction of the ion chemistry between target components; In addition, adopt high-purity Al2O 3Earthenware slab is dielectric material, has improved heat endurance and the high voltage withstanding characteristic of device, makes the device more stable work.

Claims (2)

1. dull and stereotyped hermetically sealed low temperature plasma excitaton source based on the dielectric barrier discharge technology, it is characterized in that forming a hollow arc chamber by two parallel being bonded together of potsherd, be pasted with masking foil respectively as sparking electrode on the potsherd in the composition hollow arc chamber outside, the periphery of two bonding potsherds is respectively equipped with quartzy window, air inlet and exhaust outlet.
2. a kind of dull and stereotyped hermetically sealed low temperature plasma excitaton source according to claim 1 based on the dielectric barrier discharge technology, it is characterized in that using the hollow arc chamber of the bonding formation of potsherd to be cuboid, quartzy window sticks on the front end minor face of ceramic wafer, air inlet is located on the rear end minor face relative with quartzy window, and exhaust outlet is located at front end and excites on the long limit of the contiguous outside ceramic wafer of end.
CN201010288991XA 2010-08-13 2010-09-21 Slab-type full-sealing low-temperature plasma excitation source based on DBD (Dielectric Barrier Discharge) technology Withdrawn CN101945527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010288991XA CN101945527A (en) 2010-08-13 2010-09-21 Slab-type full-sealing low-temperature plasma excitation source based on DBD (Dielectric Barrier Discharge) technology

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201010252940 2010-08-13
CN201010252940.1 2010-08-13
CN201010288991XA CN101945527A (en) 2010-08-13 2010-09-21 Slab-type full-sealing low-temperature plasma excitation source based on DBD (Dielectric Barrier Discharge) technology

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CN101945527A true CN101945527A (en) 2011-01-12

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102226764A (en) * 2011-04-02 2011-10-26 西安工业大学 Discrimination method for laser damage on the surface of a film or an optical element and determination device thereof
CN102325422A (en) * 2011-09-13 2012-01-18 青岛佳明测控仪器有限公司 Flat plate type totally-sealed low-temperature plasma excitation source
CN102448239A (en) * 2012-01-10 2012-05-09 中国科学院西安光学精密机械研究所 Dielectric barrier discharge enhanced-type low-temperature plasma brush generation device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102226764A (en) * 2011-04-02 2011-10-26 西安工业大学 Discrimination method for laser damage on the surface of a film or an optical element and determination device thereof
CN102325422A (en) * 2011-09-13 2012-01-18 青岛佳明测控仪器有限公司 Flat plate type totally-sealed low-temperature plasma excitation source
CN102448239A (en) * 2012-01-10 2012-05-09 中国科学院西安光学精密机械研究所 Dielectric barrier discharge enhanced-type low-temperature plasma brush generation device
CN102448239B (en) * 2012-01-10 2013-06-05 中国科学院西安光学精密机械研究所 Dielectric barrier discharge enhanced-type low-temperature plasma brush generation device

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Open date: 20110126