CN101935826A - Plasma-enhanced chemical gas-phase deposition furnace - Google Patents
Plasma-enhanced chemical gas-phase deposition furnace Download PDFInfo
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- CN101935826A CN101935826A CN 201010279719 CN201010279719A CN101935826A CN 101935826 A CN101935826 A CN 101935826A CN 201010279719 CN201010279719 CN 201010279719 CN 201010279719 A CN201010279719 A CN 201010279719A CN 101935826 A CN101935826 A CN 101935826A
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Abstract
The invention discloses a plasma-enhanced chemical gas-phase deposition furnace which comprises a sedimentation cavity body and a cavity door. The inner side of the cavity door is connected with carbonized silicon paste on which a plurality of carrier boats are arranged, a front flow uniformizing homogenizing plate and a rear flow uniformizing homogenizing plate for evenly permeatinguniformizing gases are respectively arranged at both ends of the carbonized silicon paste. The invention has the advantages that the hollow cavity of the sedimentation cavity body is divided into a front buffer cavity, a main cavity and a rear buffer cavity by the front flow uniformizinghomogenizing plate and the rear flow uniformizinghomogenizing plate when the cavity door is closed. When the invention is in use, reaction gases are input through an intake pipe, firstly enter the front buffer cavity, then evenly flow into the main cavity through the front flow uniformizinghomogenizing plate and react to coat a silicon slice in the main cavity. The gases evenly flow into the main cavity and are extracted through an exhaust pipe when coating the silicon slice, and extracted resultant substances are evenly dischargedemitted through the rear flow uniformizinghomogenizing plate so that the gases in the main cavity have favorable concentration evenness and stability, not only can favorably be used for finishing coating, but also enable the silicon slice to have even coating thickness and good compactness.
Description
Technical field
The present invention relates to a kind of chemical vapor depsotition equipment, especially relate to a kind of plasma enhanced chemical vapor deposition stove that is used for the tubular structure of manufacture of solar cells process.
Background technology
Sun power is abundant to originate, pollution-free and freely take these exclusive advantages to become the human common recognition that renewable energy source is utilized.At present, solar energy power generating has obtained national governments and has paid attention to, and solar energy power generating has been classified as important power source of 21 century.
In the manufacture of solar cells process, after making herbs into wool, diffusion, etch step, need utilize plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) method is at the surface preparation antireflective coating (also claiming the plasma enhanced chemical vapor deposition film) of silicon chip, the main effect of antireflective coating is to reduce luminous reflectance, with the generating efficiency of raising solar cell, so the preparation of antireflective coating is particularly important in the manufacture of solar cells process.The equipment that the preparation antireflective coating is used is the plasma enhanced chemical vapor deposition stove, because the preparation of antireflective coating is to react to carry out in airtight cvd furnace, and the homogeneity of antireflective coating is particularly important to the quality of solar cell, therefore in order to guarantee the homogeneity of antireflective coating, just require the homogeneity and the stability of all gases that participates in reacting to want high, if participate in the homogeneity and the less stable of all gases of reaction, then will cause the compactness of antireflective coating poor, problems such as uneven thickness, will cause the surface of solar cell to produce aberration, thereby will cause Solar cell performance to reduce.
The plasma enhanced chemical vapor deposition stove of existing tubular structure, as shown in Figure 4, it comprises deposition chamber 1 with an opening end and the chamber door 2 that matches with the opening end 11 of deposition chamber 1, the inboard of chamber door 2 is connected with silicon carbide slurry 3, be placed with a plurality of slide glass boats 4 that are used to load silicon chip 7 on the silicon carbide slurry 3, run through on the chamber door 2 and be provided with inlet pipe 5, inlet pipe 5 is connected with the cavity 12 of deposition chamber 1, the bottom of deposition chamber 1 is run through and is provided with offgas duct 6, and offgas duct 6 is connected with the cavity 12 of deposition chamber 1.When using this PECVD cvd furnace, the silicon chip that need is prepared antireflective coating is loaded on the slide glass boat according to the order of sequence, and the push chamber door enters in the cavity of deposition chamber the silicon carbide slurry fully, closes the chamber door, feeds N
2Make the cavity of deposition chamber become a confined chamber with excluding air, feed nitrogen, silane, ammonia by inlet pipe again, utilize air extractor by offgas duct the cavity of deposition chamber to be bled simultaneously, simultaneously this PEVCD cvd furnace is heated so that silicon chip is carried out plated film, reaction formula is:
XNH
3+SiH
4=SiN
x+（（3X+4）／2）H
2
The ventilating mode of this input and output, the reacted resultant of all gases in the cavity that is input to deposition chamber can be rejected to outside the deposition chamber in time, new reactant gases can in time enter in the cavity of deposition chamber again, guaranteed that chemical reaction equilibrium continues forward and carries out, thereby guaranteed to obtain silicon nitride film in the silicon chip surface deposition.But also there is weak point in this ventilating mode of this PECVD cvd furnace: because the relative deposition chamber with offgas duct of inlet pipe is less, and inlet pipe and offgas duct are distributed in two of deposition chamber respectively, therefore the distribution of the reactant gases in the cavity of (being in the gas transmission exhaust process) deposition chamber is that the actual banana shape that is of gas stream (is near the concentration homogeneity of reactant gases inlet pipe and the offgas duct in reaction process, less stable, the concentration homogeneity of the reactant gases of the cavity middle part of deposition chamber, stability better), as shown in Figure 5, it is poor that this gas stream will cause being positioned at the silicon chip film-coated uneven thickness and the compactness at two of cavity of deposition chamber, thereby will cause the surface of solar cell to have obvious aberration.
Summary of the invention
Technical problem to be solved by this invention provides a kind ofly can prepare that compactness is good, the plasma enhanced chemical vapor deposition stove of good uniformity, antireflective coating that sticking power is good.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of plasma enhanced chemical vapor deposition stove, comprise deposition chamber with an opening end and the chamber door that matches with the opening end of described deposition chamber, the inboard of described chamber door is connected with the silicon carbide slurry, described silicon carbide slurry was positioned at the cavity of described deposition chamber fully when described deposition chamber was connected with described chamber door, be placed with a plurality of slide glass boats that are used to load silicon chip on the described silicon carbide slurry, the two ends that it is characterized in that described silicon carbide slurry are respectively arranged with preceding even flow plate and the back even flow plate that all is used for evenly passing through gas, it is preceding cushion chamber that described preceding even flow plate and described back even flow plate divide the cavity of described deposition chamber, main chamber and back cushion chamber, all described slide glass boats are positioned at described main chamber, gas before described in the cushion chamber flows in the described main chamber equably by even flow plate before described, and the gas in the described main chamber flows in the cushion chamber of described back equably by described back even flow plate.
Even flow plate is arranged at the end of described silicon carbide slurry near described chamber door before described, described back even flow plate is arranged at the end of described silicon carbide slurry near the bottom of described deposition chamber, cushion chamber is the space between described chamber door and the described preceding even flow plate before described, described main chamber be described before space between even flow plate and the described back even flow plate, described back cushion chamber is the space between the bottom of described back even flow plate and described deposition chamber.
Even flow plate and described back even flow plate are quartz disc before described, evenly are provided with a plurality of ventilating pits on the described quartz disc.
The diameter of the diameter of even flow plate and described back even flow plate is all smaller or equal to the internal diameter of the chamber wall of described deposition chamber before described.
Run through on the door of described chamber and be provided with inlet pipe, the bottom of described deposition chamber is run through and is provided with offgas duct, reactant gases by described inlet pipe input enters described preceding cushion chamber, the reactant gases that is positioned at described preceding cushion chamber enters described main chamber by the described ventilating pit that evenly is arranged on the described preceding even flow plate, reaction gases reaction pair silicon chip carries out plated film in described main chamber, the reacted resultant of reactant gases entered described back cushion chamber by the described ventilating pit that evenly is arranged on the even flow plate of described back when described offgas duct was bled, and the resultant that is positioned at described back cushion chamber is discharged outside the described deposition chamber by described offgas duct.
Compared with prior art, the invention has the advantages that be provided with respectively by two ends at silicon carbide slurry before even flow plate and back even flow plate, like this when the chamber door is closed, preceding even flow plate and back even flow plate are separated into preceding cushion chamber with the cavity of deposition chamber, main chamber and back cushion chamber, import reactant gases by inlet pipe during use, reactant gases is introduced in the preceding cushion chamber, reactant gases flows in the main chamber by preceding even flow plate uniformly then, the silicon chip that the reactant gases reaction pair is positioned at main chamber carries out plated film, because reactant gases flows in the main chamber equably by preceding even flow plate, and bleed by offgas duct in the time of silicon chip film-coated, the resultant of extracting out is discharged equably by the back even flow plate, therefore the concentration homogeneity and the stability that enter the reactant gases in the main chamber are all good, all silicon chips all are in the uniform main chamber of reactant gases internal reaction, not only can finish plated film preferably, and can make the coating film thickness of silicon chip even and compactness is better, thereby avoid the surface of solar cell to produce aberration.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of cvd furnace of the present invention;
Fig. 2 is the cross-sectional schematic of cvd furnace of the present invention;
Fig. 3 is the synoptic diagram that flows to of the gas stream of reactant gases in cvd furnace of the present invention;
Fig. 4 is the one-piece construction synoptic diagram of existing cvd furnace;
Fig. 5 is the synoptic diagram that flows to of the gas stream of reactant gases in existing cvd furnace.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
The plasma enhanced chemical vapor deposition stove of a kind of tubular structure that the present invention proposes, as depicted in figs. 1 and 2, it comprises deposition chamber 1 with an opening end 11 and the chamber door 2 that matches with the opening end 11 of deposition chamber 1, the inboard of chamber door 2 is connected with silicon carbide slurry 3, silicon carbide slurry 3 was positioned at the cavity 12 of deposition chamber 1 fully when deposition chamber 1 was connected with chamber door 2, be placed with a plurality of slide glass boats 4 that are used to load silicon chip 7 on the silicon carbide slurry 2, the two ends of silicon carbide slurry 3 are respectively arranged with preceding even flow plate 8 and the back even flow plate 9 that all is used for evenly passing through gas, the cavity 12 of even flow plate 8 and 9 fens deposition chamber 1 of back even flow plate is preceding cushion chamber 14 before when deposition chamber 1 is connected with chamber door 2, main chamber 15 and back cushion chamber 16, all slide glass boats 4 are positioned at main chamber 15, run through on the chamber door 2 and be provided with inlet pipe 5, inlet pipe 5 is connected with preceding cushion chamber 14, the bottom of deposition chamber 1 is run through and is provided with offgas duct 6, offgas duct 6 is connected with back cushion chamber 16, reactant gases by inlet pipe 5 inputs enters preceding cushion chamber 14, the reactant gases of cushion chamber 14 enters main chamber 15 equably by preceding even flow plate 8 before being positioned at, 15 reaction gases reaction pair silicon chips 7 carry out plated film in main chamber, the reacted resultant of reactant gases enters back cushion chamber 16 equably by back even flow plate 9 when bleeding by 6 pairs of deposition chamber 1 of offgas duct, and the resultant that is positioned at back cushion chamber 16 is discharged outside the deposition chamber 1 by offgas duct 6.Because even flow plate 8 and back even flow plate 9 before this cvd furnace is provided with respectively by the two ends at silicon carbide slurry 3, and preceding even flow plate 8 and back even flow plate 9 are separated into preceding cushion chamber 14 with the cavity 12 of deposition chamber 1, main chamber 15 and back cushion chamber 16, therefore be before being introduced in the cushion chamber 14 during the cavity 12 of reactant gases input deposition chamber 1, flow to equably in the main chamber 15 by preceding even flow plate 8 again, and the resultant that the reaction of the reactant gases when bleeding in the master chamber 15 generates is to flow to equably in the cushion chamber 16 of back by back even flow plate 9, make that like this reactant gases in main chamber 15 is equally distributed, the concentration homogeneity and the stability of the reactant gases in the promptly main chamber 15 are all better, as shown in Figure 3, thereby make all silicon chip 7 coating film thicknesses that are positioned at main chamber 15 even and compactness is good, the surface that efficiently solves solar cell produces the problem of aberration.
In this specific embodiment, preceding even flow plate 8 is arranged at silicon carbide slurry 3 ends near chamber doors 2, back even flow plate 9 is arranged at the end of silicon carbide slurry 3 near the bottom of deposition chamber 1, preceding cushion chamber 14 is the space between chamber door 2 and the preceding even flow plate 8, main chamber 15 is preceding even flow plate 8 and the back space between the even flow plate 9, and back cushion chamber 16 is the space between the bottom of afterwards even flow plate 9 and deposition chamber 1.
In this specific embodiment, preceding even flow plate 8 and back even flow plate 9 all can adopt high pressure resistant and can not make with the material of reactant gases reaction, as quartz disc, before a plurality of ventilating pits 81 evenly are set on quartz disc constitute even flow plate 8 and after even flow plate 9.
In this specific embodiment, before the design when even flow plate 8 and back even flow plate 9, the diameter of the diameter of preceding even flow plate 8 and back even flow plate 9 can be designed to be slightly less than or equal the internal diameter of the chamber wall 13 of deposition chamber 1.
Claims (5)
1. plasma enhanced chemical vapor deposition stove, comprise deposition chamber with an opening end and the chamber door that matches with the opening end of described deposition chamber, the inboard of described chamber door is connected with the silicon carbide slurry, described silicon carbide slurry was positioned at the cavity of described deposition chamber fully when described deposition chamber was connected with described chamber door, be placed with a plurality of slide glass boats that are used to load silicon chip on the described silicon carbide slurry, the two ends that it is characterized in that described silicon carbide slurry are respectively arranged with preceding even flow plate and the back even flow plate that all is used for evenly passing through gas, it is preceding cushion chamber that described preceding even flow plate and described back even flow plate divide the cavity of described deposition chamber, main chamber and back cushion chamber, all described slide glass boats are positioned at described main chamber, gas before described in the cushion chamber flows in the described main chamber equably by even flow plate before described, and the gas in the described main chamber flows in the cushion chamber of described back equably by described back even flow plate.
2. a kind of plasma enhanced chemical vapor deposition stove according to claim 1, it is characterized in that described preceding even flow plate is arranged at the end of described silicon carbide slurry near described chamber door, described back even flow plate is arranged at the end of described silicon carbide slurry near the bottom of described deposition chamber, cushion chamber is the space between described chamber door and the described preceding even flow plate before described, described main chamber be described before space between even flow plate and the described back even flow plate, described back cushion chamber is the space between the bottom of described back even flow plate and described deposition chamber.
3. a kind of plasma enhanced chemical vapor deposition stove according to claim 1 and 2 is characterized in that described preceding even flow plate and described back even flow plate are quartz disc, evenly are provided with a plurality of ventilating pits on the described quartz disc.
4. a kind of plasma enhanced chemical vapor deposition stove according to claim 3, it is characterized in that described before the diameter of the diameter of even flow plate and described back even flow plate all smaller or equal to the internal diameter of the chamber wall of described deposition chamber.
5. a kind of plasma enhanced chemical vapor deposition stove according to claim 4, it is characterized in that running through on the door of described chamber and be provided with inlet pipe, the bottom of described deposition chamber is run through and is provided with offgas duct, reactant gases by described inlet pipe input enters described preceding cushion chamber, the reactant gases that is positioned at described preceding cushion chamber enters described main chamber by the described ventilating pit that evenly is arranged on the described preceding even flow plate, reaction gases reaction pair silicon chip carries out plated film in described main chamber, the reacted resultant of reactant gases entered described back cushion chamber by the described ventilating pit that evenly is arranged on the even flow plate of described back when described offgas duct was bled, and the resultant that is positioned at described back cushion chamber is discharged outside the described deposition chamber by described offgas duct.
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| CN 201010279719 CN101935826A (en) | 2010-09-13 | 2010-09-13 | Plasma-enhanced chemical gas-phase deposition furnace |
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| CN 201010279719 CN101935826A (en) | 2010-09-13 | 2010-09-13 | Plasma-enhanced chemical gas-phase deposition furnace |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104419909A (en) * | 2013-08-27 | 2015-03-18 | 茂迪(苏州)新能源有限公司 | Film-coated furnace tube |
| CN110042370A (en) * | 2019-05-22 | 2019-07-23 | 湖南红太阳光电科技有限公司 | A kind of reaction chamber structure of Tubular PECVD device |
| WO2019148520A1 (en) * | 2018-02-02 | 2019-08-08 | 深圳丰盛装备股份有限公司 | Tubular pecvd reaction chamber-mouth-door structure |
| CN110440595A (en) * | 2019-09-05 | 2019-11-12 | 杨鸿苍 | Gas phase process furnace |
| CN111118478A (en) * | 2019-12-31 | 2020-05-08 | 湖南红太阳光电科技有限公司 | PECVD equipment for preparing heterojunction battery thin film |
| CN112853326A (en) * | 2021-01-06 | 2021-05-28 | 长江存储科技有限责任公司 | Film layer deposition method |
| CN114959647A (en) * | 2022-04-07 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Thin film deposition device and air inlet mechanism thereof |
| CN116516317A (en) * | 2023-04-12 | 2023-08-01 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5629666A (en) * | 1979-08-17 | 1981-03-25 | Sumitomo Electric Ind Ltd | Chemical deposition apparatus |
| JPS58206119A (en) * | 1982-05-27 | 1983-12-01 | Agency Of Ind Science & Technol | Thin-film producing apparatus |
| DE3739528A1 (en) * | 1987-11-21 | 1989-06-01 | Bbc Brown Boveri & Cie | CVD-tubular furnace reactor |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104419909A (en) * | 2013-08-27 | 2015-03-18 | 茂迪(苏州)新能源有限公司 | Film-coated furnace tube |
| CN104419909B (en) * | 2013-08-27 | 2016-12-28 | 茂迪(苏州)新能源有限公司 | A kind of plated film boiler tube |
| WO2019148520A1 (en) * | 2018-02-02 | 2019-08-08 | 深圳丰盛装备股份有限公司 | Tubular pecvd reaction chamber-mouth-door structure |
| CN110042370A (en) * | 2019-05-22 | 2019-07-23 | 湖南红太阳光电科技有限公司 | A kind of reaction chamber structure of Tubular PECVD device |
| CN110042370B (en) * | 2019-05-22 | 2021-05-14 | 湖南红太阳光电科技有限公司 | Reaction chamber structure of tubular PECVD equipment |
| CN110440595A (en) * | 2019-09-05 | 2019-11-12 | 杨鸿苍 | Gas phase process furnace |
| CN111118478A (en) * | 2019-12-31 | 2020-05-08 | 湖南红太阳光电科技有限公司 | PECVD equipment for preparing heterojunction battery thin film |
| CN112853326A (en) * | 2021-01-06 | 2021-05-28 | 长江存储科技有限责任公司 | Film layer deposition method |
| CN112853326B (en) * | 2021-01-06 | 2022-09-02 | 长江存储科技有限责任公司 | Film layer deposition method |
| CN114959647A (en) * | 2022-04-07 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Thin film deposition device and air inlet mechanism thereof |
| CN116516317A (en) * | 2023-04-12 | 2023-08-01 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
| CN116516317B (en) * | 2023-04-12 | 2023-12-15 | 江苏微导纳米科技股份有限公司 | Carrier boat, treatment equipment and method for controlling pressure drop in carrier boat |
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Application publication date: 20110105 |