CN101906622A - Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system - Google Patents
Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system Download PDFInfo
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- CN101906622A CN101906622A CN2010102633551A CN201010263355A CN101906622A CN 101906622 A CN101906622 A CN 101906622A CN 2010102633551 A CN2010102633551 A CN 2010102633551A CN 201010263355 A CN201010263355 A CN 201010263355A CN 101906622 A CN101906622 A CN 101906622A
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Abstract
The invention discloses a device for controlling temperature and uniformity of epitaxial wafers in an MOCVD system. A group of non-contact light compensating optical thermometers is arranged above a tray along the radial direction to feed back the temperature of single or a plurality of epitaxial wafers in a plurality of annular areas. A temperature controller independently controls the power output of a plurality of heating elements below the tray by using difference minimization of a statistical average value of the temperatures of the epitaxial wafers and an epitaxial process specified temperature as a target. The plurality of epitaxial wafers in each annular area are correspondingly heated by using one or more lower adjacent heating elements which are arranged annularly and have small radial coverage area so as to effectively balance the radial heat loss of the epitaxial wafers and the tray under the process condition of different temperatures and realize accurate and stable control of the temperature and the uniformly between the single epitaxial wafers and the adjacent epitaxial wafers. The device is also provided with a contact thermocouple thermometer for measuring a heater temperature serving as a reference point of the epitaxial process specified temperature and meanwhile monitoring whether the heater works normally.
Description
Technical field
The present invention relates to a kind of MOCVD (metal organic chemical vapor deposition) system and control method thereof that is used for production compound semiconductor photoelectric device, particularly wherein be used to control epitaxial wafer temperature and inhomogeneity apparatus and method.
Background technology
Metal organic chemical vapor deposition (hereinafter to be referred as MOCVD) is by deposition one deck or lasting deposit multilayer extension crystalline network film, to form the process as photodiode semiconducter device such as (LED) on epitaxial wafer.The performance and the good article rate of the normal distribution of described device such as wavelength (color), brightness and forward voltage, directly the homogeneity decision of forming by quality, thickness and the material of last each layer epitaxial film of epitaxial wafer (or claiming substrate base); And the homogeneity of this epitaxial film, again by the evenly mixed and distribution direct correlation of reactant gases on the temperature homogeneity of epitaxial wafer and the epitaxial wafer surface.For example, when the luminous lattice film of extension key, greater than 3 ℃, the good article rate of this device just may reduce by 15%～20% as the temperature difference of epitaxial wafer.
In addition,, reduce the production cost of substrate extension, in the MOCVD reaction chamber, carry out epitaxially grown epitaxial wafer quantity simultaneously, wherein be no lack of large-sized epitaxial wafer in continuous increase for improving the production capacity of system.Therefore, when the extension lattice film, how to control between the epitaxial wafer, and the homogeneity of temperature on the single large size epitaxial wafer, most important for obtaining high-quality epitaxial film and improving the device good article rate.
Temperature and the homogeneity of control epitaxial wafer when metal organic chemical vapor deposition extension lattice film, at first, need its well heater directly or by placing the pallet of epitaxial wafer,, can both carry out uniform heating epitaxial wafer in same epitaxy technique temperature or under different epitaxy technique temperature.
This requirement is particularly important during to the lattice film of extension such as light emitting diode (LED), its multilayer film all continue to finish in same reaction chamber, and several layer films of its key are very high to the uniformity requirement of temperature, and temperature differs greatly between the different epitaxy techniques.For example, the epitaxy technique temperature of luminescent layer film is 700 ℃～900 ℃, and P-knot film is 900 ℃～1050 ℃, and N-knot film is 1020 ℃～1050 ℃.
Because under different epitaxy technique temperature condition, thermal equilibrium condition difference in the epitaxial reaction chamber, each epitaxial wafer, especially be placed on the pallet Different Diameter to locational epitaxial wafer, the heat of its reception and the heat of loss have very big-difference, therefore, the epitaxial wafer well heater must have the controllability of very big even heating.
In the extension technological process, need to measure the temperature of epitaxial wafer, the homogeneity of single epitaxial wafer temperature, and the temperature homogeneity between the epitaxial wafer, the measuring method of this temperature not only needs accurately and fast, and measured data can be controlled temperature and homogeneity, the especially epitaxial wafer of epitaxial wafer and the temperature homogeneity between the epitaxial wafer effectively, in time by temperature-control device.
Described temperature-control device, generally according to the temperature and the designed function of epitaxial wafer well heater of the thermometric feedback data of epitaxial wafer, epitaxy technique regulation, each regional power of control heater is to realize temperature and the inhomogeneity control to epitaxial wafer.
And temperature and the performance index that homogeneity has two keys, accuracy and the stability of control epitaxial wafer.Wherein, accuracy is meant the actual temperature controlled and the levels of precision of specified temperature; Stability is meant that the actual temperature of being controlled reaches the time of specified temperature scope and the intensity of variation of actual temperature in whole control process.Therefore, the accuracy and the stability of the control of epitaxial wafer temperature and homogeneity are by the measuring method of the function of epitaxial wafer well heater, temperature, and temperature controlling method decision.
The apparatus and method of existing a kind of epitaxial wafer temperature homogeneity control, as depicted in figs. 1 and 2, in the reaction chamber of MOCVD system, a plurality of epitaxial wafers 400 radially, evenly are placed in the some recessed dish that pallet 100 upper surfaces 101 correspondences offer.Pallet 100 belows radially independently are provided with the resistive heating elements 301,302,303 of three annular spread, respectively endocyclic area, territory, Central District and the outer region of corresponding heated tray 100.Wherein, heating unit 302 areas are bigger, are the main devices that the some epitaxial wafers 400 that are placed on the territory, pallet 100 Central District are heated; Do not place epitaxial wafer 400 on the interior ring of described pallet 100 and the outer region.Described pallet 100 along its central shaft by rotating mechanism 600 driven rotary, to advance a temperature homogeneity of improving between epitaxial wafer 400 and the epitaxial wafer 400.
The optical temperature meter (Pyrometer) of some groups of noncontacts-luminous compensation is set respectively above pallet 100, wherein, non-contact optical thermometer 501 is arranged on top, territory, pallet 100 Central District, upwards each encloses some epitaxial wafer temperature 204 in corresponding measurement footpath, and feed back to temperature regulator 503, control power output device 504 changes the power of heating unit 302, realizes the temperature control to epitaxial wafer 400.
Because the homogeneity of epitaxial wafer 400 temperature is indirectly by ring temperature 201,202 decisions of pallet outer shroud temperature in pallet temperature between the epitaxial wafer 400 202 and the pallet.Therefore one group of non-contact optical thermometer 502 also is set, detect and will encircle in the pallet pallet temperature 202 combination back feedbacks between temperature 201 or pallet outer shroud temperature 203 and the epitaxial wafer 400 respectively, by independent two temperature regulators 503 that are provided with, control the power that power output device 504 changes heating unit 301,303 under interior ring and the outer region respectively, realize control epitaxial wafer 400 temperature homogeneities.
Yet there are following problem in this device and temperature controlled method.At first, non-contact optical thermometer 501 generally is installed in the reaction chamber top, directly measures the temperature on epitaxial wafer 400 surfaces, and this is the temperature of extension reaction needed control just.But be full of reactant gases between non-contact optical thermometer 501 and the epitaxial wafer 400, gas aggradation easily reacts on the solid surface, in the life-time service, eyeglass on the light path of non-contact optical thermometer 501 can be because the influence of plated film gas aggradation, cause the skew in the temperature survey, change the temperature survey accuracy.
Secondly, the heating unit 302 under the territory, Central District, under the different operating temperature of adjacent epitaxy technique, particularly the high temperature and the temperature difference differ under the bigger different epitaxy techniques, can not regulate the temperature homogeneity between single epitaxial wafer 400 and the epitaxial wafer 400 effectively.Although this temperature homogeneity can be improved to a certain extent by the heating unit 301,303 of endocyclic area and outer region, but because the heating unit 302 in territory, Central District, the zone that covers is very big, and the power of regulating this heating unit 302 can not uniform balance pallet 100 and epitaxial wafer 400 heat loss radially.Under the situation that quantity increases and size increases of epitaxial wafer 400, this problem is with even more serious.Therefore, there is the controllability problem in above-mentioned well heater, makes between single epitaxial wafer 400 and the some epitaxial wafers 400, and accurate and stable temperature homogeneity control is difficult to be realized.
In addition, since the heat of epitaxial wafer 400 run off with and with the different temperature difference that cause of pallet 100 contact positions, especially on large size epitaxial wafers 400 such as 4 inches of diameters, even according to ring temperature 201, pallet outer shroud temperature 203 in pallet temperature between the epitaxial wafer of being surveyed 400 202 and the pallet, control the temperature homogeneity of pallet 100, also can't guarantee the temperature homogeneity of epitaxial wafer 400.And because the thermal capacity of pallet 100 and epitaxial wafer 400 differs bigger, and both temperature differ more than 20 ℃ at least, and maximum can be above 50 ℃.Therefore, even pallet 100 temperature homogeneities obtain stable control, the stability of epitaxial wafer 400 temperature homogeneities also is difficult to guarantee.
At last, the associated temperature 201,202,203 of above-mentioned pallet 100 is fed back, and is independent mutually with the feedback of epitaxial wafer temperature 204, carries out some heating units 301,302,303 of power regulation respectively, temperature to epitaxial wafer 400 can influence each other, and also causes the instability of its temperature and homogeneity control.
Summary of the invention
The purpose of this invention is to provide a kind of when metal organic chemical vapor deposition (MOCVD) extension lattice film, control epitaxial wafer temperature and inhomogeneity apparatus and method, can be when lasting extension different crystalline lattice film, control the temperature and the homogeneity of single epitaxial wafer effectively in the large-temperature range very much, and can control temperature and homogeneity between the epitaxial wafer effectively.
In order to achieve the above object, technical scheme of the present invention provides a kind of MOCVD of being used for system's control epitaxial wafer temperature and inhomogeneity device, comprise that some recessed dish by the upper surface setting is corresponding to be placed with the pallet of some epitaxial wafers, the one group of noncontact that is arranged on described pallet top, the optical temperature meter of luminous compensation, and the well heater that is arranged on the pallet below.
Described pallet is disposed radially some concentrics but annular section that radius increases progressively, and described some epitaxial wafers are arranged evenly in these some annular sections;
Described one group of non-contact optical thermometer radially is arranged in described pallet top, each or adjacent several non-contact optical thermometers, the corresponding temperature that detects the some epitaxial wafers in the same annular section on the described pallet;
But described well heater comprises the heating unit of one group of circular permutation independent power input of concentric setting, make each or adjacent several described cyclic heating units by heated tray, be arranged in the some epitaxial wafers on the same annular section on the main corresponding heated tray.
Described MOCVD system control epitaxial wafer temperature and the inhomogeneity device of being used for also comprises and the temperature gauge linked temperature regulator of described some non-contact opticals; Described some non-contact optical thermometers feed back to described temperature regulator with the epitaxial wafer temperature data that records respectively.
Described MOCVD system control epitaxial wafer temperature and the inhomogeneity device of being used for also comprises the some power output devices that are connected and are subjected to its control with described temperature regulator; Described some power output devices also with the corresponding connection of several described heating units, and the power of each heating unit of independent regulation is realized the temperature control to pallet and epitaxial wafer.
When placing 3 inches or following some epitaxial wafer on the described pallet, some epitaxial wafers in the same annular section, the top is by at least one described non-contact optical thermometer detected temperatures, and the below is heated by at least one described heating unit of independently controlling.
When placing 4 inches or above some epitaxial wafer on the described pallet, some epitaxial wafers in the same annular section, the top is by at least two described non-contact optical thermometer detected temperatures, and the below is by the described heating units heating of at least two independent controls.
The well heater of described pallet below is provided with at least one contact thermocouple thermometer, it is directly measured the temperature of the described well heater that obtains, as the monitoring point and the temperature controlled reference point of epitaxial wafer of well heater working order.
Described MOCVD system control epitaxial wafer temperature and the inhomogeneity device of being used for is characterized in that, also comprises swivel arrangement; Described tray bottom is provided with central shaft, and it is passed down through described well heater, is connected with described swivel arrangement, drives the pallet rotation by swivel arrangement.
A kind of MOCVD system control epitaxial wafer temperature and inhomogeneity method of being used for is characterized in that, comprises following steps:
Step 1, by one in the one group of non-contact optical thermometer that radially is provided with or adjacent several, correspondingly measure on the pallet temperature of a plurality of epitaxial wafers in the same annular section, and feed back to temperature regulator and carry out statistical treatment;
Step 2, by temperature regulator according to the epitaxy technique temperature of setting and the temperature of actual measurement, the driving power take-off equipment independently changes the power of each heating unit;
Step 3, each or the adjacent heating unit that several can independently be controlled are by heated tray, and the epitaxial wafer that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
Demarcate the primary data of setting up in the described temperature regulator, comprise: the temperature parameter that described pallet and epitaxial wafer heat run off;
The temperature parameter of the output rating of the described heating unit of corresponding each annular section, and power regulation is to other annular section epitaxial wafer Temperature Influence parameter;
And the thermometric heater temperature of described contact thermocouple, with the Relation Parameters of the thermometric epitaxial wafer temperature of described non-contact optical.
Described temperature regulator records described non-contact optical thermometer respectively, and statistical average value is handled and calculated to the Temperature Feedback data of same epitaxial wafer or a plurality of epitaxial wafers;
Afterwards, described temperature regulator is compared described statistical average value respectively with the temperature of epitaxy technique regulation, according to the temperature contrast of some epitaxial wafers on each annular section that obtains;
With described temperature contrast minimum is target, and temperature regulator driving power take-off equipment changes the output rating of each heating unit, realizes temperature between single epitaxial wafer on the pallet and the adjacent epitaxial wafer and inhomogeneity control.
Compared with prior art, the invention has the advantages that: one group noncontact, the luminous compensate for optical thermometer of the present invention by radially being provided with, directly measure the feedback signal of the temperature of epitaxial wafer as the power change of respective regions heating unit.The heater temperature of directly measuring by contact thermocouple thermometer also to monitor whether works better and as the reference point of epitaxy technique specified temperature of well heater, guarantees thermometric accuracy.At large-sized epitaxial wafer, also can make the different radial positions of one group of a plurality of epitaxial wafer in the same annular section of pallet, corresponding adjacent respectively a plurality of non-contact optical thermometers, it is accurate to guarantee that each epitaxial wafer is measured.
Temperature regulator of the present invention is a target with the statistical average value of each zone epitaxial wafer temperature of being surveyed and the difference minimum of epitaxy technique specified temperature, temperature according to different epitaxy technique regulations, on temperature controlled method, at least be provided with the temperature parameter that pallet and epitaxial wafer heat run off, or the temperature parameter of each regional heating unit output rating, with the power regulation of each regional heating unit to other regional epitaxial wafer Temperature Influence parameter, by the requirement of epitaxial wafer temperature and inhomogeneity control accuracy and stability, determine the power output of each regional heating unit.
The present invention is also by each or every several adjacent heating units, its top of main corresponding heating, one group of a plurality of epitaxial wafer in the same annular section of pallet.Because the area that each cyclic heating unit radially covers is little, under the processing condition of differing temps, the power energy active balance epitaxial wafer and the pallet of independent each heating unit of control run off at the radial heat, can realize adjustability and controllability, can realize effectively temperature between single epitaxial wafer and the adjacent epitaxial wafer and inhomogeneity accurate and stable control to the epitaxial wafer even heating.
Description of drawings
Fig. 1 is the synoptic diagram of epitaxial wafer in the radial array of pallet upper edge;
Fig. 2 is the structural representation of the device of existing a kind of epitaxial wafer temperature homogeneity control;
To be the present invention carry out the structural representation of pallet in the device of temperature and homogeneity control at embodiment 1 to Fig. 3 at 2 inches epitaxial wafers;
Fig. 4 is the present invention's schematic top plan view that a plurality of 2 inches epitaxial wafers are arranged in pallet upper edge annular radial in the device of embodiment 1 described epitaxial wafer temperature and homogeneity control;
To be the present invention carry out the structure schematic top plan view of the heating unit that concentric annular is provided with in the device of temperature and homogeneity control at embodiment 1 to Fig. 5 at 2 inches epitaxial wafers;
Fig. 6 is the present invention carries out the device of temperature and homogeneity control at 2 inches epitaxial wafers at embodiment 1 an overall structure schematic side view;
Fig. 7 is that adjacent heating unit carries out the heating principle synoptic diagram to epitaxial wafer among the present invention;
To be the present invention carry out the structural representation of pallet in the device of temperature and homogeneity control at embodiment 2 to Fig. 8 at 4 inches epitaxial wafers;
Fig. 9 is the present invention's schematic top plan view that a plurality of 4 inches epitaxial wafers are arranged in pallet upper edge annular radial in the device of embodiment 2 described epitaxial wafer temperature and homogeneity control;
To be the present invention carry out the structure schematic top plan view of the heating unit that concentric annular is provided with in the device of temperature and homogeneity control at embodiment 2 to Figure 10 at 4 inches epitaxial wafers;
Figure 11 is the present invention carries out the device of temperature and homogeneity control at 4 inches epitaxial wafers at embodiment 2 an overall structure schematic side view.
Embodiment
Below in conjunction with accompanying drawing, concrete enforcement structure of the present invention is described.
Embodiment 1
Control epitaxial wafer 40 temperature and inhomogeneity device are particularly useful for 3 inches of diameters or following reduced size epitaxial wafer 40 described in the present embodiment.With 2 inches is example, cooperation is referring to Fig. 3, shown in Figure 4, this device comprises the round tray 10 (Fig. 3) that a upper surface offers some recessed dishes 11, the corresponding epitaxial wafer 40 of placing 2 inches in these some recessed dishes 11, make them but in 4 annular sections that radius increases progressively (Fig. 4) arranged evenly, thereby can carry out the MOCVD coating film treatment of multilayer epitaxial crystalline network film 54 epitaxial wafers 40 of placing simultaneously on the pallet 10 at pallet 10 upper surface concentrics.
Cooperation is extremely shown in Figure 6 referring to Fig. 4, these pallet 10 belows are provided with well heater 30, comprise 4 cyclic resistive heating elements 31 (Fig. 5) that concentric is provided with, each ring-type heating unit 31 is arranged in a plurality of epitaxial wafers 40 (Fig. 6) on the same annular section by heated tray 10 on the corresponding heated tray 10.
The optical temperature meter of one group of 4 noncontact-luminous compensation (hereinafter to be referred as non-contact optical thermometer 21), be disposed radially above pallet 10, detect the optical radiation of a plurality of epitaxial wafers 40 in the above-mentioned same annular section respectively, and, feed back to a temperature regulator 51 jointly with epitaxial wafer 40 temperature datas that correspondence measures.
This temperature regulator 51 is also by being connected with 4 independent power output devices 52 that are provided with, according to the epitaxy technique temperature of setting and the temperature of actual measurement, control the power of the heating unit 31 of above-mentioned 4 resistance-types respectively, and then 4 epitaxial wafer 40 temperature that annular section is interior on the independent control pallet 10.
On non-contact optical thermometer 21, deposit the temperature survey deviation that causes for fear of reactant gases, also the well heater 30 below the pallet 10 is provided with at least one contact thermocouple thermometer 22, the temperature of direct HEATER FOR MEASURING 30 is as a temperature controlled reference point.
Described pallet 10 bottoms are provided with central shaft 12, and it is passed down through described well heater 30, are connected with swivel arrangement 60, drive pallet 10 rotations by swivel arrangement 60, further improve the homogeneity of heating.
Referring to shown in Figure 6, said apparatus comprises for the method for epitaxial wafer 40 temperature and homogeneity control:
Step 1, by the one group of non-contact optical thermometer 21 that radially is provided with, correspondingly measure on the pallet 10 temperature of a plurality of epitaxial wafers 40 in the same annular section, and feed back to temperature regulator 51 and carry out statistical treatment;
Step 2, by temperature regulator 51 according to the epitaxy technique temperature of setting and the temperature of actual measurement, the driving power take-off equipment 52 independent power that are input to each heating unit 31 that change;
Step 3, the heating unit 31 that each is independently controlled pass through heated tray 10, and the epitaxial wafer 40 that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
Wherein, also need to consider various factors during temperature survey: during pallet 10 rotations, top non-contact optical thermometer 21 obtains the temperature of the epitaxial wafer 40 on same arrangement radius, when the temperature sampling frequency is identical, sampling point near each epitaxial wafer 40 on the annular section in pallet 10 centers of circle is many, sampling point away from each epitaxial wafer 40 on the annular section in the center of circle is few, and this difference can reach several times.In addition, the temperature sampling during pallet 10 rotations, the temperature that records may be on the epitaxial wafer 40, may be on the pallet 10, also may be pallet 10 and epitaxial wafer 40 intersections.The temperature sampling frequency need be mated with the rotating speed of pallet 10, and when sample frequency became very high with pallet 10 rotating speeds, temperature regulator 51 needed enough data-handling capacities, and real-time Temperature Feedback control is provided.
When initial, in temperature regulator 51, well heater 30 temperature that at least one contact thermocouple thermometer 22 is directly measured have been set up, the relation of epitaxial wafer 40 temperature that measure with non-contact optical thermometer 21 by demarcation.Be in operation, measure when taking place to be offset and to correct with this observed temperature, guarantee thermometric accuracy when optical temperature.In addition, this contact thermocouple thermometer 22 can directly be monitored whether works better of well heater 30, the problem that the equipment that detects sooner is in operation and occurs.
Afterwards, temperature regulator 51 is compared statistical average value respectively with the temperature of epitaxy technique regulation, and according to the temperature contrast of each the annular section epitaxial wafer 40 that obtains, with this temperature contrast minimum is target, determine the output rating that each heating unit 31 is required, realize temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity control.
Because everywhere temperature is a dynamic thermally equilibrated result all the time on the pallet 10, by heating unit 31 heating of below, is that the heat on surface runs off on the one hand on the one hand.Heat runs off relevant with surrounding environment (being the internal structure of reaction chamber); Also in the different radial positions of pallet 10 difference is arranged, the power of the temperature compensation that needs is exactly a function about radial position; It also is different under different temperature that heat runs off, the power of the temperature compensation that needs is exactly a function about temperature, these relations can be found out by initial demarcation, put into the database of temperature regulator 51, are used for the parameter setting of real time temperature control.
In addition, because heat conduction is simultaneous on pallet 10 all directions, the temperature of epitaxial wafer 40 is mainly by its directly heating unit 31 decisions of below, be subjected to simultaneously adjacent below heating unit 31 influence (see figure 7).Therefore, if change the power of a heating unit 31, the not only corresponding change of epitaxial wafer 40 temperature of its top meeting, epitaxial wafer 40 temperature that are adjacent also have thereupon and change.The size of influence is relevant with many factors between the adjacent heating unit 31, and as the shape of heating unit 31, heating unit 31 is to the distance of pallet 10, the thickness of pallet 10, the material of pallet 10 etc.Can find out rule by initial demarcation in the practical application, put into database, when carrying out the real time temperature feedback control, by temperature regulator 51 by calculating the temperature control parameter that needs.
Therefore, temperature parameter except above-mentioned each regional internal heating element 31 output rating, in temperature regulator 51, at least also need to be set with the temperature parameter of pallet 10 and the loss of epitaxial wafer 40 heats, and the power regulation of each regional internal heating element 31 is to other regional epitaxial wafer 40 Temperature Influence parameters.
Embodiment 2
To shown in Figure 11, pallet 10 belows are provided with well heater 30, and are connected with at least one contact thermocouple thermometer 22 referring to Fig. 9 in cooperation, directly HEATER FOR MEASURING 30 temperature.This well heater 30 comprises 4 cyclic resistive heating elements 31 (Figure 10) that concentric is provided with.Pallet 10 tops have been disposed radially 4 non-contact optical thermometers 21, are used to detect the temperature of epitaxial wafer 40, and Temperature Feedback is sent to same temperature regulator 51.By the power output device 52 of temperature regulator 51 controls,, control the Heating temperature of heating unit 31 to the epitaxial wafer 40 on its top pallet 10 by changing power with each heating unit 31 corresponding connection.Described pallet 10 by with being connected of swivel arrangement 60, around its central shaft 12 rotations, further improve the homogeneity that heats.
With different in the foregoing description, as shown in figure 11, because epitaxial wafer 40 sizes increase, be arranged on the pallet 10 in a plurality of epitaxial wafers 40 on the same annular section, each epitaxial wafer 40 along pallet 10 radially, be crossed on its below, adjacent two the ring-type heating units 31, heat together by these two the independent heating units of controlling 31.And a plurality of epitaxial wafers 40 on the same annular section also detect optical radiation together by adjacent two the non-contact optical thermometers 21 in top, obtain the feedback of epitaxial wafer 40 temperature.Therefore, not only can regulate the temperature homogeneity between the adjacent epitaxial wafer 40, can also regulate the temperature homogeneity in the single epitaxial wafer 40, this heating for large size epitaxial wafer 40 is particularly important.
As shown in figure 11, at the method for the described device of present embodiment, comprise for epitaxial wafer 40 temperature and homogeneity control:
Step 1, by the one group of non-contact optical thermometer 21 that radially is provided with, correspondingly measure on the pallets 10 temperature of a plurality of epitaxial wafers 40 in the same annular section for per two, and feed back to temperature regulator 51 and carry out statistical treatment;
Step 2, by temperature regulator 51 according to the epitaxy technique temperature of setting and the temperature of actual measurement, the driving power take-off equipment 52 independent power that are input to each heating unit 31 that change;
Per two heating units 31 of step 3, independent control are by heated tray 10, and one group of epitaxial wafer 40 that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
Wherein, be with maximum difference in the foregoing description, because the size of epitaxial wafer 40 increases, the temperature of a plurality of epitaxial wafers 40 on the pallet 10 in the same annular section, two adjacent non-contact optical thermometers 21 by the top radial array are measured, and can obtain two different Temperature Feedback data of radial position on the same epitaxial wafer 40.By one group of non-contact optical thermometer 21, obtain each epitaxial wafer 40 and a plurality of epitaxial wafer 40 Temperature Feedback, be delivered to temperature regulator 51 and calculate statistical average value; And be target with the actual temperature of epitaxial wafer 40 with requiring the difference minimum of temperature, determine the output rating that each heating unit 31 is required; By one group of epitaxial wafer 40 of the independent same annular section of controlling in per two heating units 31 corresponding heated tray 10 tops, realize temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity control.
In the present embodiment, the deviation-correcting function of the problem that will solve in temperature control principle, the temperature survey, contact thermocouple thermometer 22 etc., with basically identical in the foregoing description, only need the database of temperature regulator 51 the inside initial alignments, temperature controlled algorithm etc. are done respective change, to adapt to the situation of 4 inches of diameters or above large size epitaxial wafer 40.
In the present embodiment, described one group of epitaxial wafer 40 arranging at same annular section, carry out temperature detection non-contact optical thermometer 21, be used for thermoregulator heating unit 31, be not limited to above-mentioned 2, can specifically consider according to the factors such as size of pallet 10 and epitaxial wafer 40, some quantity are set respectively.
Comprehensive embodiment 1,2 is described, and the one group non-contact optical thermometer 21 of the present invention by radially being provided with directly measured the feedback signal of the temperature of epitaxial wafer 40 as the power change of respective regions heating unit 31.Also by contact thermocouple thermometer 22 direct HEATER FOR MEASURING 30 temperature,, guarantee thermometric accuracy to monitor whether works better and of well heater 30 as the reference point of epitaxy technique specified temperature.At large-sized epitaxial wafer 40, also can make the different radial positions of one group of a plurality of epitaxial wafer 40 in the pallet 10 same annular sections, corresponding adjacent respectively a plurality of non-contact optical thermometers 21, it is accurate to guarantee that each epitaxial wafer 40 is measured.
The present invention is also by each or every several adjacent heating units 31, its top of corresponding heating, one group of a plurality of epitaxial wafer 40 in the pallet 10 same annular sections.Because the area that each cyclic heating unit 31 radially covers is little, under the processing condition of differing temps, the power energy active balance epitaxial wafer 40 and the pallet 10 of independent each heating unit 31 of control run off at the radial heat, can realize adjustability and controllability, can realize effectively temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity accurate and stable control to epitaxial wafer 40 even heating.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. one kind is used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, comprise by some recessed dish (11) correspondence of upper surface setting and be placed with the pallet (10) of some epitaxial wafers (40), the one group of noncontact that is arranged on described pallet (10) top, the optical temperature meter (21) of luminous compensation, and the well heater (30) that is arranged on pallet (10) below, it is characterized in that
Described pallet (10) is disposed radially some concentrics but annular section that radius increases progressively, and described some epitaxial wafers (40) are arranged evenly in these some annular sections;
Described one group of non-contact optical thermometer (21) radially is arranged in described pallet (10) top, each or adjacent several non-contact optical thermometers (21), the corresponding described pallet (10) that detects is gone up at least one or the temperature of a plurality of epitaxial wafer (40) in the same annular section;
Described well heater (30) comprises one group of circular permutation of concentric setting, the heating unit (31) of independent power input, each or adjacent several described heating units (31) are arranged in the some epitaxial wafers (40) on the same annular section by heated tray (10) on the main corresponding heated tray (10).
2. be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device according to claim 1, it is characterized in that, also comprise the temperature regulator (51) that is connected with described some non-contact optical thermometers (21); Described some non-contact optical thermometers (21) feed back to described temperature regulator (51) with epitaxial wafer (40) temperature data that records respectively.
3. as described in claim 2, be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, also comprise the some power output devices (52) that are connected and are subjected to its control with described temperature regulator (51); Described some power output devices (52) respectively with the corresponding connection of described several described heating units (31), by the power of each heating unit of independent regulation (31), realize the temperature control of epitaxial wafer (40).
4. as described in claim 3, be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, when described pallet (10) go up to be placed 3 inches or following some epitaxial wafers (40), some epitaxial wafers (40) in the same annular section, the top is by at least one described non-contact optical thermometer (21) detected temperatures, and the below is mainly by at least one the described heating unit of independently controlling (31) heating.
5. as described in claim 3, be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, when described pallet (10) go up to be placed 4 inches or above some epitaxial wafers (40), some epitaxial wafers (40) in the same annular section, the top is by at least two described non-contact optical thermometers (21) detected temperatures, and the below is mainly heated by the described heating unit (31) of two independent controls at least.
6. be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device according to claim 1, it is characterized in that, the well heater (30) of described pallet (10) below is provided with at least one contact thermocouple thermometer (22), it is directly measured the temperature of the described well heater (30) that obtains, as the monitoring point and the temperature controlled reference point of epitaxial wafer (40) of well heater (30) working order.
7. be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device according to claim 1, it is characterized in that, also comprise swivel arrangement (60); Described pallet (10) bottom is provided with central shaft (12), and it is passed down through described well heater (30), is connected with described swivel arrangement (60), drives pallet (10) rotation by swivel arrangement (60).
8. one kind is used for MOCVD system control epitaxial wafer temperature and inhomogeneity method, it is characterized in that, comprises following steps:
Step 1, by one in the one group of non-contact optical thermometer (21) that radially is provided with or adjacent several, correspondingly measure the temperature that pallet (10) is gone up a plurality of epitaxial wafers (40) in the same annular section, and feed back to temperature regulator (51) and carry out statistical treatment;
Step 2, by temperature regulator (51) according to the epitaxy technique temperature of setting and the temperature of actual measurement, the independent power that changes each heating unit (31) of driving power take-off equipment (52);
Step 3, each or the adjacent heating unit that several can independently be controlled (31) are by heated tray (10), and the epitaxial wafer (40) that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
9. as described in claim 8, be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, demarcate the primary data of setting up in the described temperature regulator (51), comprise: the temperature parameter that described pallet (10) and epitaxial wafer (40) heat run off;
The temperature parameter of the output rating of the described heating unit (31) of corresponding each annular section, and power regulation is to other annular section epitaxial wafer (40) Temperature Influence parameter;
And well heater (30) temperature that records of described contact thermocouple thermometer (22), the Relation Parameters of epitaxial wafer (40) temperature that records with described non-contact optical thermometer (21).
10. as described in claim 9, be used for MOCVD system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, described temperature regulator (51) records described non-contact optical thermometer (21) respectively, the Temperature Feedback data of same epitaxial wafer (40) or a plurality of epitaxial wafer (40) calculate statistical average value;
Afterwards, described temperature regulator (51) is compared described statistical average value respectively with the temperature of epitaxy technique regulation, according to the temperature contrast of some epitaxial wafers (40) on each annular section that obtains; With described temperature contrast minimum is target, temperature regulator (51) driving power take-off equipment (52) changes the output rating of each heating unit (31), realizes temperature and inhomogeneity control between last single epitaxial wafer (40) of pallet (10) and the adjacent epitaxial wafer (40).
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Free format text: CORRECT: ADDRESS; FROM: ROOM 1701, 17/F, YUGANG BUILDING, NO. 90, JAFFE ROAD, WANCHAI, HONG KONG, CHINA TO: 213200 NO. 318, HUACHENG ROAD, JINTAN ECONOMIC DEVELOPMENT ZONE, JINTAN CITY, CHANGZHOU CITY, JIANGSU PROVINCE Free format text: CORRECT: INVENTOR; FROM: CHEN AIHUA JIN XIAOLIANG TO: CHEN AIHUA JIN XIAOLIANG ZHANG WEI SHI JIANXIN |
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Effective date of registration: 20110707 Address after: 213200, No. 318, Hua Cheng Road, Jintan Economic Development Zone, Changzhou, Jiangsu, Jintan Applicant after: Jiangsu Zhongcheng Semi-conductor Equipment Co., Ltd. Address before: Hongkong Chinese Chai Jaffe Road No. 90 building 17 floor, room 1701, Hongkong Applicant before: Huacheng Photoelectric Equipment (Hong Kong) Co., Ltd. |
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