CN101901744B - Circular ring-shaped member for plasma process and plasma processing apparatus - Google Patents
Circular ring-shaped member for plasma process and plasma processing apparatus Download PDFInfo
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- CN101901744B CN101901744B CN2010101780500A CN201010178050A CN101901744B CN 101901744 B CN101901744 B CN 101901744B CN 2010101780500 A CN2010101780500 A CN 2010101780500A CN 201010178050 A CN201010178050 A CN 201010178050A CN 101901744 B CN101901744 B CN 101901744B
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- shaped member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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Abstract
A plasma processing apparatus includes a processing chamber the inside of which is maintained in a vacuum; a mounting table configured to mount a target substrate and serve as a lower electrode in the processing chamber; a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate; an upper electrode arranged to face the lower electrode thereabove; and a power feed unit for supplying a high frequency power to the mounting table. The apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber. The circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.
Description
Technical field
The present invention relates at the circular ring-shaped member for plasma process of the periphery of the indoor processed substrate around being implemented plasma treatment of plasma treatment and have the plasma treatment appts of this plasma treatment circular ring-shaped member.
Background technology
As the device of the etching in the manufacturing process of semiconductor device, FPD (Flat Panel Display, flat-panel screens), accumulation, oxidation, sputter etc., extensive use plasma treatment appts.Plasma etching apparatus as one of plasma treatment appts, in container handling or reative cell, dispose abreast upper electrode and lower electrode, processed substrate (semiconductor crystal wafer, glass substrate etc.) is positioned on the lower electrode, is to apply the high frequency voltage that plasma generates usefulness by adaptation to upper electrode or to lower electrode or to upper electrode and lower electrode basically.
Usually, be provided with a plurality of gas squit holes at upper electrode, to the etching gas that whole substrate has sprayed by plasma, simultaneously the whole face of processed substrate carried out etching from these gas squit holes.
Usually, with upper electrode and the lower electrode configured in parallel of the plasma etching apparatus of parallel plate-type, apply the high frequency voltage that plasma generates usefulness by adaptation to upper electrode or to lower electrode.Between two electrodes, the electronics that has been accelerated by high-frequency electric field, the secondary electron of emitting from electrode or the electronics and the molecule generation ionizing collision of processing gas that have been heated produce the plasma of processing gas.Utilize for example etching and processing of retrofit that free radical in the plasma, ion pair substrate surface implement expectation.
At this, along with becoming more meticulous of semiconductor integrated circuit, in plasma treatment, more and more pursue the high-density plasma under the low pressure.For example, in the plasma treatment appts of capacitive coupling type, pursue more high efficiency, the plasma treatment of high density, lower bias voltage more.In addition, along with the large tracts of land of die size, the large scale of processed substrate, pursue larger sized plasma, the more and more large-scale change of chamber (container handling).
But, form in large-sized plasma treatment appts in the large scale of following processed substrate, the high tendency of electric field strength of electric field ratio edge part of the central part of electrode (upper electrode or lower electrode) is arranged.As a result, exist the density of the plasma that generates in electrode centers section side and the different such problems of electrode edge section side.Therefore, there is such problem: concentrate on the higher part of this plasma density at the resistivity step-down of the higher part plasma of plasma density, also having electric current on the relative electrode, thereby the inhomogeneities of plasma density is more serious.
In addition, the maximization of the chamber that causes along with the large scale by processed substrate, in etched actual process, under the impact of the mobile generation of the processing gas that causes because of reasons such as Temperature Distribution, also exist plasma density in the central part of processed substrate such problems different from circumference.
The inhomogeneities of plasma density causes making the etching speed of processed substrate to produce difference, particularly cause the rate of finished products variation of the device that obtains owing to the circumference of processed substrate is bad.
For the problems referred to above, up to now electrode structure various designs have been attempted.For example, in order to address this problem, known have a technical scheme (patent documentation 1) that is made of the interarea central part of high-frequency electrode the high resistance member.This technology is: the central portion of interarea (plasma contact-making surface) that is made of the side that is connected with high frequency electric source of electrode the high resistance member, make the electric field strength relative reduce of electric field ratio electrode peripheral part on the electrode interarea, electrode centers section, thereby proofread and correct the inhomogeneities of Electric Field Distribution.
In addition, in patent documentation 2 disclosed plasma treatment appts, in the interarea of the electrode relative with processing the space, imbed dielectric, make the impedance that emits to the High frequency power of processing the space with respect to the self-electrode interarea relatively become large, relatively diminish in electrode edge section in electrode centers section, thereby improve the uniformity of Electric Field Distribution.
On the other hand, uniformity for the plasma density distribution of the edge part that improves processed substrate, plasma treatment appts arranges for example conflux ring of circular part in its process chamber, this circular part sets the periphery that is positioned in the wafer on the mounting table for centering on.The conflux ring has by the interior conflux ring element that is configured in inboard ring-type according to its kind difference and is configured to the dual round structure that the outer conflux ring element of ring-type of the periphery of conflux ring element in this consists of.Usually, interior conflux ring element is made of conductive materials such as silicon, and outer conflux ring element is made of insulating properties materials such as quartz.
Interior conflux ring element plays and makes plasma concentrate on effect on the wafer, and outer conflux ring element plays the effect that plasma is enclosed in the insulator on the wafer.
In plasma treatment, owing to making the temperature of outer conflux ring element, the heat input from plasma rises, but when temperature was unstable, near the free radical density the outer conflux ring element became inhomogeneous, and it is inhomogeneous that the plasma density of the outer edge of wafer also becomes.As a result, the difference central portion and the outer edge of wafer produce the plasma treatment effect is difficult to wafer is implemented uniform plasma treatment.
Therefore, in patent documentation 3, be formed with outside the groove of ring-type on the conflux ring, by reducing its thermal capacity, can be used to heat input from plasma rises rapidly the temperature of outer conflux ring and can easily keep high temperature, can guarantee thus the uniformity of the plasma density of wafer circumference, can remove the deposit that is attached on the conflux ring in stage initial stage of batch production.
Patent documentation 1: TOHKEMY 2000-323456 communique
Patent documentation 2: TOHKEMY 2004-363552 communique
Patent documentation 3: TOHKEMY 2007-67353 communique
But in the plasma treatment appts of above-mentioned patent documentation 1,2 such high-frequency discharge modes, the interarea central part that is made of high-frequency electrode the high resistance member exists expend (energy loss) of the High frequency power that causes because of Joule heat to become how such problem.
In addition, as patent documentation 1,2, imbedding in dielectric technology at the interarea of electrode, distribution of impedance characteristic on the electrode interarea is fixed by dielectric material and pattern curve, exists for the change of diversified technique or process conditions corresponding such problem neatly.
In addition, in patent documentation 3, reduce thermal capacity by on the conflux ring outside groove being set.Thus, guarantee the uniformity of the plasma density distribution of wafer circumference by the stabilisation that makes at short notice temperature rising and temperature.
But the uniformity of the plasma density distribution of wafer circumference not only needs to guarantee the stability of temperature, also needs the Electric Field Distribution of wafer circumference is adjusted into Electric Field Distribution, the electric field strength of expectation.
In patent documentation 3, thereby reduce the stability that thermal capacity is guaranteed temperature by on the conflux ring outside groove being set.But the uniformity of the plasma density distribution during guaranteeing before the temperature stabilization by the uniformity of the stable plasma density distribution of bringing of this temperature is not that Electric Field Distribution is adjusted into desired Electric Field Distribution, electric field strength.Therefore, in patent documentation 3, can not solve Electric Field Distribution is adjusted into the such problem of desired Electric Field Distribution.
In addition, in patent documentation 3, reduce its thermal capacity by on the conflux ring outside groove being set, thereby guarantee the uniformity of plasma density distribution.But, for etching speed, the deposition velocity that makes the wafer end forms desired value, the Electric Field Distribution of the peripheral upper surface of wafer end need to be adjusted into desired value, but patent documentation 3 can not address this problem.
Summary of the invention
The present invention makes in view of the problem points of above-mentioned conventional art, its purpose is to provide a kind of circular ring-shaped member for plasma process and plasma treatment appts, and it is adjusted to desired distribution by the Electric Field Distribution with the wafer circumference and can realizes improving uniformity and the rate of finished products of plasma treatment.
The technical scheme 1 described invention that is used for addressing the above problem is a kind of circular ring-shaped member for plasma process, it is configured to around the periphery of the processed substrate that is implemented plasma treatment, it is characterized in that, forming the groove of at least one ring-type with the face of the opposite side of plasma span side that generates plasma, the groove of this ring-type is used for the Electric Field Distribution of the above-mentioned plasma span is adjusted into the Electric Field Distribution of expectation.This be because: by form the groove of ring-type at the circular ring-shaped member around the periphery of the processed substrate that is implemented plasma treatment, can change the Electric Field Distribution of processed substrate circumference.
Technical scheme 7 described inventions each described circular ring-shaped member for plasma process in the technical scheme 1～6 is the basis, it is characterized in that, this circular ring-shaped member for plasma process is formed by any of quartz, carbon, silicon, carborundum and ceramic material at least.
Technical scheme 11 described inventions each described plasma treatment appts in the technical scheme 8～10 is the basis, it is characterized in that, from above-mentioned circular ring-shaped member, apart from the radially inner side end be this circular ring-shaped member width 30% with interior position, form above-mentioned groove with Rack.This be because: if begin to form groove from 30% the position that the distance of circular ring-shaped member and the contacted medial end of processed substrate surpass the circular ring-shaped member width, then be difficult to adjust the Electric Field Distribution of processed substrate circumference.
Technical scheme 12 described inventions each described plasma treatment appts in the technical scheme 8～11 is the basis, it is characterized in that, above-mentioned circular ring-shaped member apart from the radially inner side end be this circular ring-shaped member width 80% with interior zone, form above-mentioned groove with Rack.This be because: if form groove in 80% the zone that the distance of circular ring-shaped member and the contacted medial end in processed substrate end surpass the circular ring-shaped member width, then less on the impact of the Electric Field Distribution of processed substrate circumference.
Technical scheme 13 described inventions each described plasma treatment appts in the technical scheme 8～12 is characterized in that as the basis, and the degree of depth of above-mentioned groove is at least below 70% of thickness of above-mentioned circular ring-shaped member.This be because: when forming groove in the inside of circular ring-shaped member, if its degree of depth (length of the vertical direction when the circular ring-shaped member along continuous straight runs is arranged) surpass circular ring-shaped member thickness 70%, then the life-span of circular ring-shaped member can shorten because plasma impacts the wearing and tearing that produce.
Technical scheme 14 described inventions each described plasma treatment appts in the technical scheme 8～13 is characterized in that as the basis, and above-mentioned circular ring-shaped member is formed by any of quartz, carbon, silicon, carborundum and ceramic material at least.
Adopt plasma treatment appts of the present invention, by regulating the Electric Field Distribution of wafer circumference, can be easily and etching speed or the deposition velocity of freely regulating the wafer periphery, can improve uniformity, the rate of finished products of plasma treatment.
Description of drawings
Fig. 1 is the longitudinal section of structure of the plasma treatment appts of expression one embodiment of the invention.
Fig. 2 is the cutaway view of type conflux ring and flute profile moulding conflux ring in the past.
Fig. 3 the has been illustration figure of groove shape.
Fig. 4 is the curve chart of the etching speed of expression oxide-film.
Fig. 5 is the curve chart of the etching speed of expression nitriding (nitride) thing.
Fig. 6 is the curve chart of the characteristic of expression sputtering rate.
Fig. 7 is the curve chart of the characteristic of expression deposition velocity.
Embodiment
Below, detailed description will be applicable to based on plasma treatment appts of the present invention an execution mode of Etaching device with reference to accompanying drawing.But the present invention is not limited to this execution mode.
Fig. 1 represents the schematic configuration of integral body of the plasma treatment appts 1 of one embodiment of the present invention.This plasma treatment device comprises the columnar chamber with process chamber, and this process chamber is such as being made of aluminium, stainless steel etc. and its within is sealed airtightly.At this, this plasma treatment device constitutes the capacity coupled mode plasma treatment appts that the bottom double frequency applies mode, but the present invention is not limited thereto, and can apply the plasma treatment appts that mode or single-frequency apply mode for double frequency up and down.
In process chamber, flatly dispose for the pedestal 2 of supporting as for example semiconductor crystal wafer (hereinafter referred to as wafer) 15 of processed substrate.Pedestal 2 is made of conductive materials such as aluminium, doubles as the electrode into RF.In order to utilize Electrostatic Absorption force retaining wafer 15, be provided with the electrostatic chuck 16 that is consisted of by dielectrics such as potteries at the upper surface of pedestal 2.Imbed the internal electrode 17 that is consisted of by conducting films such as copper, tungsten of electric conductor in the inside of electrostatic chuck 16.Pedestal 2 is supported on the tubular maintaining part 3 of the insulating properties such as pottery.Tubular maintaining part 3 is supported on the tubular support 4 of process chamber, disposes with the conflux ring 5 of ring-type around the upper surface of pedestal 2 at the upper surface of tubular maintaining part 3.Dispose circular shroud ring 25 in the outside of conflux ring 5.
Between the sidewall of process chamber and tubular support 4, be formed with the exhaust line 6 of ring-type, at the entrance of this exhaust line 6 or the baffle plate 7 of ring-type is installed midway.The bottom of exhaust line 6 is connected with exhaust apparatus 9 by blast pipe 8.Exhaust apparatus 9 has turbomolecular pump equal vacuum pump, and desired vacuum degree can reduce pressure the plasma treatment space in the process chamber to.Be equipped with for opening and closing moving into of wafer 15 at the sidewall outer surface of process chamber and take out of mouthfuls 10 gate valve 11.
At the back side of pedestal 2 (lower surface) and upper electrode 21 connecting from the upper end of the extended cylindrical or columnar feeder rod used therein 14 of the lead-out terminal of adaptation 13 (13a, 13b) (14a, 14b).Applying the 1st and the 2nd high frequency electric source 12a, the 12b that use in the mode at double frequency is electrically connected with pedestal 2 and upper electrode 21 by adaptation 13 and feeder rod used therein 14.Feeder rod used therein 14 is such as being made of conductors such as copper or aluminium.
The 1st high frequency electric source 12a output is mainly used in generating the 1st High frequency power of for example 60MHz plasma, that frequency ratio is higher above pedestal 2.On the other hand, the 2nd high frequency electric source 12b output is mainly used in ion is incorporated into the 2nd High frequency power of for example 2MHz wafer 15, that frequency ratio is lower on the pedestal 2.That mate between the impedance of the impedance of the 1st high frequency electric source 12a side and load (mainly being electrode, plasma, chamber) side is adaptation 13a, and that mate between the impedance of the impedance of the 2nd high frequency electric source 12b side and load-side is adaptation 13b.
Be provided with the upper electrode 21 of facing mutually abreast with pedestal 2 at the top of process chamber.Upper electrode 21 forms inner discoideus for hollow structure, is provided with a plurality of gas squit holes 22 in the lower face side of upper electrode 21, thereby forms the shower head.And, utilize gas introduction tube 23 to supply with the etching gas that comes and import to hollow space in the upper electrode 21 from processing gas supply part, etching gas evenly and is dispersedly supplied in the process chamber by gas vent 22 from this hollow space.In addition, upper electrode 21 is such as being made of materials such as Si, SiC.
Supply with heat-conducting gas, for example He gas that has from heat-conducting gas supply unit (not shown) by gas supply pipe 24 between the back side of electrostatic chuck 16 and wafer 15, this heat-conducting gas is used for promoting electrostatic chuck 16, is the heat conduction between pedestal 2 and the wafer 15.
The principal character of this plasma treatment device is: for the characteristic that obtains wafer 15 and can form the impedance operator of the electric field strength that is suitable for various plasma treatment process most and Electric Field Distribution and use the conflux ring 5 that is formed with circular groove.
Fig. 2 represents the in the past figure of the cross sectional shape of the flute profile moulding conflux ring (Fig. 2 (b)) of the employed in the past type of plasma treatment conflux ring (Fig. 2 (a)) and one embodiment of the present invention.Conflux ring shown in Figure 2 all is the conflux ring of unicity (being also referred to as one-piece type).But the present invention is not limited to single type, also goes for for example being split into any ring or two rings in the Splittable conflux ring of interior conflux ring and outer these two rings of conflux ring.As the material of conflux ring, for example can be formed by the material (Si) identical with wafer 15, or by quartz, carbon, carborundum, ceramic material (yittrium oxide (Y
2O
3), silicon dioxide) etc. any formation.Conflux ring 5 is positioned on the electrostatic chuck 16 for the peripheral ends that supports wafer 15.
Utilize Fig. 2 (b) that the flute profile moulding conflux ring of one embodiment of the present invention is described.Flute profile moulding conflux ring shown in Fig. 2 (b) is being formed with groove 51 with 16 contacted of electrostatic chucks (back side of conflux ring) side.Preferred this groove is formed on the rear side of conflux ring.This be because: when making the one side side that is formed with groove be exposed in the plasma, groove can wear and tear because of the impact of plasma, and groove shape is changed gradually.Also because: in the situation that form groove by cut etc., compare with another side, because the impact of plasma may make the generation rate of dust uprise.
The degree of depth of the shape of the groove 51 shown in Fig. 2 (b) (length of the vertical direction when conflux ring 5 is horizontally disposed with) be preferably the conflux ring thickness about 70%, more preferably below 50%.This be because: when the degree of depth of groove 51 surpass the conflux ring thickness 70% the time, the wearing and tearing of the conflux ring 5 that causes because of the impact of plasma can make the lifetime of conflux ring 5.In addition, aspect the rigidity of guaranteeing the conflux ring, also the degree of depth of preferred groove 51 is below 70% of thickness of conflux ring.In addition, the degree of depth of the groove 51 of the flute profile moulding conflux ring shown in Fig. 2 (b) forms about 0.4mm.At this, the degree of depth of groove 51 be the thickness conflux ring 5 that is approximately 3.6mm thickness about 1/9.
In addition, the width radially of the shape of groove 51 is preferably below 80% of width radially of conflux ring.For example, the width of the groove 51 of the flute profile moulding conflux ring shown in Fig. 2 (b) forms about 40mm.At this, the width of groove 51 be equivalent to width be 100mm conflux ring 5 width 2/5 (40%).
In addition, groove 51 preferably begins to form from the end of close wafer 15 1 sides of conflux ring or 30% the forming to radial outside with interior position of the radial width from the end of close wafer 15 1 sides of this conflux ring.This be because: by in the scope that is not subjected to bombardment by ions, the end from close wafer 15 1 sides of conflux ring begins to form groove 51 as much as possible, can more easily adjust the lip-deep Electric Field Distribution of wafer 15.
In sum, in order to make wafer 15 lip-deep Electric Field Distribution for best, preferably the shape of groove 51 is formed the shape of expectation.Fig. 3 the has been illustration figure of groove shape of the present invention.Near the figure of the groove shape that (a) of Fig. 3 is expression when forming the groove 51 of half elliptic shape the medial end of conflux ring 5.Fig. 3 (b) is illustrated in the figure that medial end forms trapezoidal groove 51 and the groove shape when the radial outside of trapezoidal groove 51 forms tetragonal groove 51.(c) of Fig. 3 is the inside that is illustrated in conflux ring 5 figure when forming the hollow groove 51 of 3 circles.Because the present invention forms groove for the Electric Field Distribution that obtains to expect at the conflux ring, therefore, preferably forms optimal groove according to desired Electric Field Distribution.
Embodiment
Then, prepare respectively 3 groups of diameters that formed oxide-film on the surface be 300mm without figure wafer (hereinafter referred to as wafer Ox) and the diameter that formed from the teeth outwards the nitriding thing be 300mm without figure wafer (hereinafter referred to as wafer Ni).Then, supply with by C
4F
6/ Ar/O
2(18/225/10) the processing gas that consists of, form conflux ring 1W type at above-mentioned conflux ring, the groove that type in the past is set without figure wafer (wafer Ox, wafer Ni), groove forms conflux ring 17W type, to wafer Ox and wafer Ni implement respectively 60 second plasma treatment.In addition, the bottom surface temperature of the wall surface temperature/electrostatic chuck of the temperature/process chamber of the upper electrode of this moment is 60 ℃/60 ℃/45 ℃.
Fig. 4 is illustrated under the above-mentioned plasma treatment condition, and the curve chart of the etching speed of wafer Ox, Fig. 5 are to be illustrated under the above-mentioned plasma treatment condition curve chart of the etching speed of wafer Ni.In addition, " 0 " of the transverse axis of Fig. 4 and curve chart shown in Figure 5 some expression crystal circle center point is that unit representation is played radially right side 150mm from this " 0 " point with millimeter, with millimeter being 150mm on the left of unit representation is played radially from this " 0 " point.In addition, the longitudinal axis is the etching speed (nm/ minute) of oxide-film or the etching speed (nm/ minute) of nitriding thing.
As shown in Figure 4, the etching speed of the oxide-film when wafer Ox arranges type conflux ring in the past and implements plasma treatment, etching speed in crystal circle center's part is approximately 187nm/ minute, and along with going its etching speed to become gradually large toward the wafer end, in distance wafer end be the position of about 30mm for maximum, approximately be 195nm/ minute.And, be roughly the same etching speed from this to end.
Relative therewith, the wafer Ox that groove forms conflux ring 1W type and implemented plasma treatment is set, the etching speed of section of crystal circle center (being approximately 187nm/ minute) is for roughly the same with the etching speed of type in the past, and along with going its etching speed to become gradually large toward the wafer end, the position that in distance wafer end is about 30mm is 197nm/ minute, and, from this to end, etching speed sharply rises, and the etching speed of end is approximately 218nm/ minute.
In addition, as shown in Figure 4, it is roughly the same that the characteristic of the etching speed of groove formation conflux ring 17W type and groove form conflux ring 1W type.
Fig. 5 is the curve chart that is illustrated in the etching speed that the nitriding thing when type conflux ring was also implemented plasma treatment under these conditions in the past is set on the wafer Ni.As shown in Figure 5, the etching speed of crystal circle center part is approximately-2nm/ minute, and this is illustrated in section of crystal circle center and piles up CxFy is arranged.In addition, along with the absolute value that removes the negative of etching speed toward the wafer end becomes large (it is large that the stackeding speed of CxFy becomes), become greatly from the position of the distance wafer about 50mm in end to end deposition (accumulations) speed.
Relative therewith, the wafer Ni that groove forms conflux ring 1W type and implemented plasma treatment is set, has at the etching speed of section of crystal circle center for more in the past than the type absolute value was slightly large negative (be approximately-4nm/ minute) but along with the characteristic of removing to become from negative positive number toward the wafer end.That is, demonstrate the position accumulation and the etching that are approximately 25mm in distance wafer end and offset, along with continuing to go toward the wafer end, the characteristic that etching speed further rises.
Although the etching speed characteristic of the wafer Ni of groove formation conflux ring 17W type is compared in the etching speed value with groove formation conflux ring 1W type and be there are differences, its characteristic itself is roughly the same with groove formation conflux ring 1W type.
From the above, according to the difference of the thermal conductivity that is embedded in the conducting strip in the groove 51, etching characteristic can not produce larger difference.This be because: forming impact that grooves 51 produce at conflux ring 5 is not that variation by thermal capacity causes, but owing to the variation of the impedance of conflux ring 5 changes its peripheral Electric Field Distribution.As a result, cause that plasma (electric charge) changes to the impact strength of wafer 15.Therefore, for the Electric Field Distribution that obtains to expect, change the shape of groove 51 according to the material that applies plasma treatment, just can form in the position of expectation the Electric Field Distribution of expectation.Thus, can make the plasma treatment homogenizing that wafer 15 is applied.
Then, investigated the characteristic of sputtering rate, prepare similarly to Example 1 that groove forms conflux ring 1W type and groove forms these two kinds of conflux rings of conflux ring 17W type as the conflux ring 5 that is assembled into plasma treatment appts 1, and, the conflux ring of type in the past prepared as the comparative example of above-mentioned two conflux rings.
Prepare similarly to Example 13 diameter 300mm without the figure wafer.Then, the indoor decompression of plasma treatment to 35 millitorrs, is supplied with by Ar/O
2(1225/15) the processing gas that consists of, conflux ring, the groove of type form conflux ring 1W type, groove forms conflux ring 17W type arranging in the past without the figure wafer, implement 60 second plasma treatment.In addition, the bottom surface temperature of the wall surface temperature/electrostatic chuck of the temperature/process chamber of the upper electrode of this moment is 60 ℃/60 ℃/45 ℃.
Fig. 6 is illustrated under the above-mentioned plasma treatment condition, the curve chart of the characteristic of the sputtering rate that above-mentioned 3 kinds of conflux rings produce.In addition, " 0 " of the transverse axis of curve chart shown in Figure 6 some expression crystal circle center point is that unit representation is played radially right side 150mm from this " 0 " point with millimeter, is that unit representation is played radially left side 150mm from this " 0 " point with millimeter.In addition, the unit of the sputtering rate of the longitudinal axis is nm/ minute.
Shown in Fig. 6 (a), the sputtering rate without the figure wafer when the conflux ring of type in the past being set and implementing plasma treatment is approximately 15nm/ minute at the sputtering rate of crystal circle center's part.Along with going its sputtering rate to diminish gradually toward the wafer end, the position that is approximately 40mm from distance wafer end begins to reduce sharp, and the sputtering rate of end is approximately 13nm/ minute.
Relative therewith, arrange groove form conflux ring 1W type and implemented plasma treatment without the figure wafer, be approximately 17nm/ minute at the sputtering rate of its section of crystal circle center.Beginning sputtering rate from the position of the distance wafer about 40mm in end reduces gradually, but the position that is approximately 10mm from distance wafer end is to increase gradually to end conversion, the sputtering rate of end is approximately 19nm/ minute, demonstrates and the diametical characteristic of type conflux ring in the past.
It is roughly the same that the characteristic of the sputtering rate of groove formation conflux ring 17W type and groove form conflux ring 1W type.
(b) of Fig. 6 is the standardized chart of sputtering rate that expression makes 3 kinds of conflux rings shown in (a) of Fig. 6.Shown in Fig. 6 (b), the sputter characteristic does not almost have to produce difference because of the difference of the thermal conductivity that is embedded to the conducting strip in the groove 51.Hence one can see that, forms groove 51 at conflux ring 5, be by changing thermal capacity its Electric Field Distribution on every side to be changed, not equal to be by the impedance that changes conflux ring 5 its Electric Field Distribution on every side to be changed.As a result, think that the impact strength of plasma changes, variation has also occured in sputtering rate.
Then, investigated the characteristic of deposition velocity, prepare similarly with embodiment 1,2 that groove forms conflux ring 1W type and groove forms these two kinds of conflux rings of conflux ring 17W type as the conflux ring 5 that is assembled into plasma treatment appts 1, prepare the conflux ring of type in the past as the comparative example of above-mentioned two conflux rings.
Prepare 3 diameter 300mm without the figure wafer.The indoor decompression of plasma treatment to 35 millitorrs, is supplied with by C
4F
6The processing gas that/Ar (18/1225) consists of, conflux ring, the groove of type form conflux ring 1W type, groove forms conflux ring 17W type arranging in the past without the figure wafer, implement 60 second plasma treatment.In addition, the bottom surface temperature of the wall surface temperature/electrostatic chuck of the temperature/process chamber of the upper electrode of this moment is 60 ℃/60 ℃/45 ℃.
Fig. 7 is illustrated under the above-mentioned plasma treatment condition, forms 1W type, the curve chart of characteristic of deposition velocity when groove forms this 3 kinds of conflux rings of 17W type type in the past, groove are set without the figure wafer.In addition, " 0 " of the transverse axis of curve chart shown in Figure 7 some expression crystal circle center point is that unit representation is played radially right side 150mm from this " 0 " point with millimeter, is that unit representation is played radially left side 150mm from this " 0 " point with millimeter.In addition, the unit of the deposition velocity of the longitudinal axis is nm/ minute.
Shown in Fig. 7 (a), the deposition velocity without the figure wafer when the conflux ring of type in the past being set and implementing plasma treatment is approximately 80nm/ minute in the deposition velocity of crystal circle center's part.Along with going its deposition velocity to become gradually greatly toward the wafer end, the position that is approximately 50mm from distance wafer end begins to increase sharp, and deposition velocity is approximately 105nm/ minute in end.
Relative therewith, when the periphery without the figure wafer arranges groove formation conflux ring 1W type and implements plasma treatment, be approximately 80nm/ minute in the deposition velocity of section of crystal circle center with type is roughly the same in the past, begin from the position of the distance wafer about 50mm in end to begin to reduce with the opposite deposition velocity of type in the past, the deposition velocity in its end is approximately 70nm/ minute.
Shown in Fig. 7 (a), it is roughly the same that the characteristic of the deposition velocity of groove formation conflux ring 17W type and groove form conflux ring 1W type.
(b) of Fig. 7 is the standardized curve chart of deposition velocity that expression makes 3 kinds of conflux rings shown in (a) of Fig. 7.Shown in Fig. 7 (b), with embodiment 1, embodiment 2 similarly, deposition characteristics does not have to produce difference because of the difference of the thermal conductivity that is embedded to the conducting strip in the groove 51.Hence one can see that, forms groove 15 at conflux ring 5, be by changing thermal capacity its Electric Field Distribution on every side to be changed, not equal to be that the Electric Field Distribution around it changes by the impedance that changes conflux ring 5.As a result, think that the impact strength of plasma changes, variation has also occured in deposition velocity.
By above opinion as can be known, by forming groove at the conflux ring, and change this groove shape, can form in the position of expectation the Electric Field Distribution of expectation.Hence one can see that, etching speed, deposition velocity can be adjusted into desired value at desired locations.
The present invention is not limited to plasma etching apparatus, also can be applicable to other plasma treatment appts such as plasma CVD, plasma oxidation, pecvd nitride, sputter.In addition, processed substrate of the present invention is not limited to semiconductor crystal wafer, also can be the various substrates used of flat panel display, photomask, CD substrate, printed base plate etc.
Claims (14)
1. circular ring-shaped member for plasma process, it is configured to it is characterized in that around the periphery of the processed substrate that is implemented plasma treatment,
This circular ring-shaped member for plasma process is forming the groove of at least one ring-type with the face of the opposite side of plasma span side that generates plasma, and the groove of this ring-type is used for the Electric Field Distribution of the above-mentioned plasma span is adjusted into the Electric Field Distribution of expectation.
2. circular ring-shaped member for plasma process according to claim 1 is characterized in that, above-mentioned groove is formed on inboard circumference.
3. circular ring-shaped member for plasma process according to claim 1 and 2 is characterized in that, utilizes the shape of above-mentioned groove impedance to be adjusted into the value of expectation.
4. circular ring-shaped member for plasma process according to claim 1 and 2, it is characterized in that, from this circular ring-shaped member for plasma process, apart from the radially inner side end be this circular ring-shaped member for plasma process width 30% with interior position to radial outside, form above-mentioned groove with Rack.
5. circular ring-shaped member for plasma process according to claim 1 and 2, it is characterized in that, this circular ring-shaped member for plasma process, apart from the radially inner side end be this circular ring-shaped member for plasma process width 80% with interior zone, form above-mentioned groove with Rack.
6. circular ring-shaped member for plasma process according to claim 1 and 2 is characterized in that, the degree of depth of above-mentioned groove is at least below 70% of thickness of this circular ring-shaped member for plasma process.
7. circular ring-shaped member for plasma process according to claim 1 and 2 is characterized in that, this circular ring-shaped member for plasma process is formed by any of quartz, carbon, silicon, carborundum and ceramic material at least.
8. plasma treatment appts comprises: process chamber, and its within remains vacuum; Mounting table, it is lower electrode for loading processed substrate and double as in this process chamber; Circular ring-shaped member, it is configured at the periphery of this mounting table around above-mentioned processed substrate; Upper electrode, itself and above-mentioned lower electrode relatively are configured in the top of above-mentioned lower electrode; The power supply body, it is used for to above-mentioned mounting table supply high frequency electric power; The plasma that utilization produces in above-mentioned process chamber is implemented plasma treatment to above-mentioned processed substrate, it is characterized in that,
Above-mentioned circular ring-shaped member, form the groove of at least one ring-type with the face of the opposite side of plasma span side that generates plasma, the groove of this ring-type is used for the Electric Field Distribution of the above-mentioned plasma span is adjusted into the Electric Field Distribution of expectation.
9. plasma treatment appts according to claim 8 is characterized in that, above-mentioned groove is formed on the inboard circumference of above-mentioned circular ring-shaped member.
10. according to claim 8 or 9 described plasma treatment appts, it is characterized in that, utilize the shape of above-mentioned groove the impedance of above-mentioned circular ring-shaped member to be adjusted into the value of expectation.
11. according to claim 8 or 9 described plasma treatment appts, it is characterized in that, from above-mentioned circular ring-shaped member, apart from the radially inner side end be this circular ring-shaped member width 30% with interior position to radial outside, form above-mentioned groove with Rack.
12. according to claim 8 or 9 described plasma treatment appts, it is characterized in that, above-mentioned circular ring-shaped member, apart from the radially inner side end be this circular ring-shaped member width 80% with interior zone, form above-mentioned groove with Rack.
13. according to claim 8 or 9 described plasma treatment appts, it is characterized in that, the degree of depth of above-mentioned groove is at least below 70% of thickness of above-mentioned circular ring-shaped member.
14. according to claim 8 or 9 described plasma treatment appts, it is characterized in that, above-mentioned circular ring-shaped member is formed by any of quartz, carbon, silicon, carborundum and ceramic material at least.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009128355A JP2010278166A (en) | 2009-05-27 | 2009-05-27 | Annular component for plasma treatment, and plasma treatment device |
| JP2009-128355 | 2009-05-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101901744A CN101901744A (en) | 2010-12-01 |
| CN101901744B true CN101901744B (en) | 2013-01-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101780500A Expired - Fee Related CN101901744B (en) | 2009-05-27 | 2010-05-18 | Circular ring-shaped member for plasma process and plasma processing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20100300622A1 (en) |
| JP (1) | JP2010278166A (en) |
| KR (1) | KR20100128238A (en) |
| CN (1) | CN101901744B (en) |
| TW (1) | TW201130395A (en) |
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| JP5973731B2 (en) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
| US8486798B1 (en) | 2012-02-05 | 2013-07-16 | Tokyo Electron Limited | Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof |
| US8721833B2 (en) | 2012-02-05 | 2014-05-13 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| CN103887138B (en) * | 2014-03-31 | 2017-01-18 | 上海华力微电子有限公司 | Edge ring of etching device |
| CN105336561B (en) * | 2014-07-18 | 2017-07-21 | 中微半导体设备(上海)有限公司 | Plasma etching apparatus |
| CN106548967B (en) * | 2015-09-18 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
| JP3210105U (en) * | 2016-03-04 | 2017-04-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Universal process kit |
| US10655224B2 (en) * | 2016-12-20 | 2020-05-19 | Lam Research Corporation | Conical wafer centering and holding device for semiconductor processing |
| KR102215873B1 (en) * | 2017-10-17 | 2021-02-16 | 가부시키가이샤 아루박 | Processing device of target object |
| JP7018331B2 (en) * | 2018-02-23 | 2022-02-10 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
| JP7204350B2 (en) * | 2018-06-12 | 2023-01-16 | 東京エレクトロン株式会社 | Mounting table, substrate processing device and edge ring |
| JP6705550B1 (en) | 2019-03-22 | 2020-06-03 | Toto株式会社 | Electrostatic chuck |
| JP7204564B2 (en) * | 2019-03-29 | 2023-01-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US11450545B2 (en) * | 2019-04-17 | 2022-09-20 | Samsung Electronics Co., Ltd. | Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
| JP7454976B2 (en) * | 2020-03-24 | 2024-03-25 | 東京エレクトロン株式会社 | Substrate support stand, plasma processing system, and edge ring replacement method |
| JP7442365B2 (en) * | 2020-03-27 | 2024-03-04 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing system, control method for substrate processing apparatus, and control method for substrate processing system |
| JP2021180283A (en) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | Mounting base assembly, substrate processing apparatus and substrate processing method |
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Also Published As
| Publication number | Publication date |
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| KR20100128238A (en) | 2010-12-07 |
| JP2010278166A (en) | 2010-12-09 |
| CN101901744A (en) | 2010-12-01 |
| TW201130395A (en) | 2011-09-01 |
| US20100300622A1 (en) | 2010-12-02 |
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