CN101898327B - System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks - Google Patents
System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks Download PDFInfo
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- CN101898327B CN101898327B CN201010169032.6A CN201010169032A CN101898327B CN 101898327 B CN101898327 B CN 101898327B CN 201010169032 A CN201010169032 A CN 201010169032A CN 101898327 B CN101898327 B CN 101898327B
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- 238000005498 polishing Methods 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims description 23
- 230000003750 conditioning effect Effects 0.000 title abstract description 6
- 239000000126 substance Substances 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000001105 regulatory effect Effects 0.000 claims description 26
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 230000011218 segmentation Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/003—Devices or means for dressing or conditioning abrasive surfaces using at least two conditioning tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
A chemical mechanical polishing (CMP) apparatus provides for polishing semiconductor wafers and for conditioning the polishing pad of the CMP apparatus using multiple conditioning disks at the same time. The conditioning disks may be moved together or independently along the surface of polishing pad to condition the entire surface of the rotating polishing pad.
Description
Technical field
Relate generally to equipment for making semiconductor device of the present invention.More specifically, the present invention relates to the cmp method of chemically mechanical polishing (CMP) equipment and semiconductor wafer and the method for regulating CMP equipment.
Background technology
In at present fast progressive semiconductor manufacturing industry, chemically mechanical polishing (CMP) is that planarization and polishing semiconductor substrate are to remove the advanced person of excess material and favourable method on the surface of Semiconductor substrate.By this way, embedding technique can be used for forming the conduction configuration in the opening that is formed at insulating barrier such as groove, through hole or contact hole, then uses chemically mechanical polishing to remove on the top surface of insulating barrier.After the top removal of insulating barrier, the structure of formation comprises the different opening of conductor material filling at excessive conductive material, and extends up to the top surface of insulating barrier.
Chemically mechanical polishing relates to polishing pad, and comprises machinery and chemical assembly.The polishing pad rotation needs the wafer surface of polishing to contact with the polishing pad of rotation in the wafer polishing position.Wafer such as substrate, preferably rotates to promote polishing.Dispensing head is dispensed into polishing fluid on the polishing pad.Polishing pad is made by polyurethane usually, and the polishing fluid that comprises sub-micron abrasive material and chemicals is permeated on the pad surface usually.The quality of pad interface and uniformity are critical for providing uniform polishing to polished wafer.Especially, during to several wafer continuous polishing, the surface roughness of polishing pad must be kept identical state at use equipment.
Adjusting process is used for regulating pad interface and is in needed and uniform state to keep it.Regulate and restore pad interface, remove chip from polishing pad, and keep stable clearance.Adjustment means is generally the dish with diamond surface, is pressed at the counterrotating polishing pad of conditioning period.When Adjustment operation can occur in the wafer polishing operation, or before or after the wafer polishing operation.
Because polishing pad is generally greater than traditional adjustment disk, so adjustment disk generally slides along pad interface when polishing pad rotates, whole like this pad interface can be regulated by traditional adjustment disk of less, and the diameter of the adjustment disk that this is traditional can be about 4 inches or less.Usually, be desirably in and determine to pass the concrete scanning radially of polishing pad or the number that skims in the given time range, so that needed adjusting rank to be provided.Because the size of polishing pad has increased, the sweep speed that the adjustment disk of pad interface is passed in scanning must increase to keep given per minute scanning number.Yet along with the speed of the adjustment disk that passes surface sliding has increased, the quality of Adjustment operation has reduced.
Along with the increase of semiconductor wafer sizes, regulate whole pad interface and become and more be added with challenge.The increase of semiconductor wafer sizes has caused the corresponding increase of the size of polishing pad.For example, the present diameter of wafer size reaches 450 millimeters, and the polishing pad that such wafer uses diameter may reach 1 meter to 45 inches polishes.During adjusting process, as mentioned above, the size of this increase need to cover larger surface area.Owing to make the difficulty of the diamond surface of large-sized adjustment disk, it is especially challenging to regulate whole pad interface.Keeping diameter is difficult greater than uniformity and the quality of about four inches diamond adjustment disk, because such dish must be smooth substantially fully, any deviation of flatness will cause diamond to break away from the surface, cause pollution and cut on polishing pad and the wafer surface.
Therefore, along with the size increase of polishing pad, the system and method that a kind of CMP of adjusting polishing pad is provided is important.The invention solves these shortcomings and a difficult problem.
Summary of the invention
In order to solve these and other demand, and for its purpose, in one aspect, the invention provides a kind of method for carry out chemically mechanical polishing (CMP) at substrate.The method is included on the polishing pad of CMP equipment polished substrate simultaneously or is formed on material on the substrate, use more than one independently the controllable adjustment member push down polishing pad by the diamond surface that impels each adjustment means and regulate polishing pad.
According to another aspect, the invention provides a kind of method of the polishing pad for regulating CMP equipment, comprise impel simultaneously more than one independently the adjusting surface of controlled adjustment means arrive on the polishing pad of rotation of CMP equipment.
According to another aspect, the invention provides a kind of chemical-mechanical polisher.This equipment comprises the polishing pad that is fixedly installed on the rotatable platen.This equipment also comprises carrier, and the semiconductor wafer that it is fixed polished is pressed onto on the polishing pad.Chemical-mechanical polisher also comprises more than a separation, controllable adjustment device independently, and each comprises and the contacted adjustment disk of polishing pad.
Description of drawings
The present invention reads by reference to the accompanying drawings and can be better understood by the following detailed description.It is emphasized that according to conventional actual practice the different characteristic of accompanying drawing does not need to draw in proportion.Antithesis, for clear, the size of different characteristic can increase arbitrarily or reduce.The identical identical feature of numeral indication in specification and the accompanying drawing.
Fig. 1 is the perspective view according to the aspect of chemical-mechanical polisher of the present invention;
Fig. 2 is the perspective view according to another aspect of many adjustment disks CMP equipment of the present invention;
Fig. 3 is the top view of the exemplary configuration of a plurality of adjustment means according to an aspect of the present invention; And
Fig. 4 is the top view of another exemplary configuration of a plurality of adjustment means according to an aspect of the present invention.
The specific embodiment
The invention provides and use a plurality of adjustment disks to regulate simultaneously polishing pad in the CMP equipment.Adjusting can occur in original position, as with carry out wafer polishing operation time, or it can betide before or after semiconductor wafer carries out the wafer polishing operation.The invention discloses for the polishing pad of different size and be used for the application of the semiconductor wafer of polishing different size.The setting of a plurality of adjustment disks and method can be in conjunction with different directions and the setup and uses of CMP equipment.Adjustment disk can be independent controlled.
Fig. 1 is the perspective view with rotatable platen 1 of polishing pad 3, and described polishing pad 3 comprises surface 7 and is fixed on the platen 1.Platen 1 rotates along direction of rotation 5 with any different speed that is fit to.Chip carrier 9 places on the polishing position of wafer 11 (illustrating separately) polishing pad 3.Power F applies along force direction 15, impels chip carrier 9 towards also polishing pad 3 is downward relatively.Although do not have shown in Figure 1ly, wafer 11 will place under the chip carrier 9 at interface 13 places between chip carrier 9 and the polishing pad 3.Chip carrier 9 is advantageously along direction 29 rotations.When this rotation can occur in platen 1 along direction 5 rotation.Liquid distributor 19 is at distribution locations 21 dispensing liquids 19.Because rotation, new liquid 23 spreads under chip carrier 9, thereby wafer 11 and waste liquid 25 withdraw from the polishing position.
Fig. 1 also shows two adjustment means 31.Do not place on the polishing pad 3 although illustrate in the illustrated embodiment, be to be understood that and also what will illustrate subsequently is that adjustment means 31 can place the different position on the surface 7 of polishing pad 3 simultaneously, and different distances is set each other.Additional adjustment means 31, as, unnecessary two, also can place simultaneously on the surface 7 of polishing pad 3.Each comprises adjustment disk 33 adjustment means 31, and it forms the bottom of the adjustment means shown in Fig. 1.The adjusting surface 35 of the exposure of adjustment disk 33 is preferably formed by known diamond, is advantageously used in to regulate polishing pad 3.In other exemplary embodiments, regulating surface 35 can be formed as washing away (scouring) material by other materials that is fit to, or it can comprise bristle such as brush.In an exemplary embodiment, adjustment disk 33 can have the diameter of about 4 inches or 100mm, but also can use other sizes in other exemplary embodiments.In the time of on being pressed onto polishing pad 3, adjustment disk 33 and adjustment means 31 can 39 rotations around axle 37 along direction of rotation.In some exemplary embodiments, adjustment disk 33 can not rotate.Can use different conventional methods to impel adjustment disk 33 and regulate surface 35 to arrive to the surface 7 of polishing pad 3, and cause rotation.
When adjustment disk 33 places when offseting with polishing pad 3, relevant adjustment means 31 can move along polishing pad 3, is preferably slip, like this whole surperficial 7 of the polishing pad of rotation can be adjusted.Adjustment disk 33 and adjustment means 31 can be independent controlled, can with identical or different speed rotation, can independently or as one man move along the surface 7 of polishing pad 3.
Fig. 2 shows the perspective view according to another aspect of the of the present invention a plurality of adjustment disk CMP equipment that show many (two) the individual adjustment disk 33 on the polishing pad 3.Each adjustment disk 33 keeps by the adjustment means 31 of unshowned association among Fig. 2.According to an exemplary embodiment, during along direction 5 rotation, whole surperficial 7 of polishing pad 3 can be regulated as mobile by sliding at platen 1 and polishing pad 3, and any or all in the adjustment disk 33 is along the direction of exemplary radius 47.In the adjustment disk 33 one or all can be close to towards with central point 43 away from polishing pad 3, for example, come and go along the radius of polishing pad 3.According to an exemplary embodiment, each adjustment disk 33 can be along moving along the scanning direction of radius 47.According to a concrete exemplary embodiment, adjustment disk 33 can be along the segmentation 46 of radius 47 forward and backward, or backward with to front slide, the second adjustment disk 33 can slide forward and backward along the segmentation 48 of radius 47.By this way, a whole radius that will scan polishing pad 3 in the adjustment disk 33, thereby whole circumference of scanning polishing pad 3.Adjustment disk 33 can as one man or related to each other move.When the sweep speed of 7 adjustment disks 33 that slide along the surface increased, quality of regulation descended.Like this, according to the configuration of a plurality of adjustment disks, can reach the number of the adjusting scanning of needed per minute, be half of sweep speed, because when using two adjustment disks 33, each adjustment disk 33 only covers the only about half of scanning distance along radius 47 substantially.When the size of polishing pad 3 increases to 45 inches or when larger, this is especially favourable.According to different exemplary embodiments, adjustment disk 33 separately can be along identical or different, and the radius of angle intervals moves, to cover whole polishing pad 3.According to other exemplary embodiment, adjustment disk 33 can move to scan in other directions the polishing pad 3 of whole rotation.
Forward now Fig. 3 to, place the adjustment means 31 on the polishing pad 3 to be connected to each other by mechanical couplings 55, and be connected with regulating arm 53.Adjustment means 31 can the different distance that is fit in interval.Mechanical couplings 55 can be rotated around regulating arm 53, or it can be fixed with respect to regulating arm 53.Mechanical couplings 55 can be rigidity or dynamically extensible recoverable, allows the relative motion between the adjustment means 31.Use traditional method to apply downward power, impel the adjustment disk that places under the adjustment means 31 to arrive to the surface 7 of polishing pad 3.When adjustment means 31 was set to offset with polishing pad 3, regulating arm 53 can be finished adjustment means 31 along the movement of any direction on the x-y plane on the surface 7 of polishing pad 3, or the indicated rotation of arrow 59.Can use traditional mechanical means.According to this exemplary embodiment, the rotary speed of adjustment means 31 can be independent controlled.
Fig. 4 shows another kind of exemplary configuration, and wherein adjustment means 31 can independently move.Each adjustment means 31 is connected to corresponding regulating arm 61, and each regulating arm 61 can be connected to independently mechanical mobile device, and it is along any direction of polishing pad 3 independently mobile regulating arm 61 and corresponding adjustment means 31, to realize Adjustment operation.In Fig. 3 and 4, should be understood that each adjustment means 31 can be rotatable around its axle, this rotation can occur in mobile during, this period adjustment means 31 slide along the surface 7 of polishing pad 3.
The size of configuration characteristic can change according to different exemplary embodiments.According to an exemplary embodiment, the diameter of adjustment disk 33 can be approximately four inches or less, advantageously to keep substantially flat and to lose free diamond or other polished surface 35.In different exemplary embodiments, the different-diameter in wafer 11 can comprise from 100mm to the 450mm scope, polishing pad 3 can have greatly the diameter to 1 meter or 45 inches.
According to exemplary method of the present invention, regulate polishing pad 3 and can occur in wafer polishing operating period, before, or afterwards, in this wafer polishing operation, wafer remains within the chip carrier 9 and is polished.Adjusting can comprise rotates one or more adjustment means 31 simultaneously, along polishing pad 3 in any direction, and the mobile adjustment means 31 in straight line or curve ground.
According to an exemplary embodiment, regulating arm 53 or regulating arm 61 can be connected to Programmable Logic Controller, the action of its control and regulation arm, thereby the relevant adjustment means 31 of control, position and the translational speed of the adjustment means 31 of sliding such as the rotary speed of adjustment means 31 with along polishing pad 31.According to an exemplary embodiment, such controller can be programmed so that the first adjustment means 31 is slided along the first radius section of polishing pad 3, also so that the second adjustment means 31 slide along another radius section of polishing pad 3, each adjustment means 31 moves in or out radially like this, but each scanning only is approximately radius distance half, simultaneously, the whole radius of polishing pad is scanned, thereby whole rotating polishing pad is conditioned.According to another exemplary embodiment, can use simultaneously the adjustment means more than two, they can be positioned at the diverse location with respect to the wafer polishing position on the polishing pad, for example, approach or away from the polishing position.Programmable Logic Controller can be independently or is jointly controlled to adjust member.
Above-mentionedly only show principle of the present invention.Thereby be understandable that although do not have clear and definite description herein or illustrate, those skilled in the art can design different configurations principle of the present invention is specialized, it comprises within the spirit and scope of the present invention.In addition, all example described herein and regulate the purpose that language is mainly used in only instructing is in order to understand concept that principle of the present invention and inventor propose to promote this technology, should to be interpreted as not being subjected to the restriction of specifically described example and condition.In addition, all descriptions have herein illustrated principle of the present invention, aspect and embodiment, and the example that it is concrete also has been described, are used for comprising the equivalent on its 26S Proteasome Structure and Function.In addition, such equivalent comprises equivalent known today and the following equivalent of developing, and for example, realizes identical function, does not consider any element of developing of its structure.
The description of exemplary embodiment is used for reading by reference to the accompanying drawings, and accompanying drawing is considered as the part of whole specifications.In specification, relational terms as " lower ", " higher ", " level ", " vertically ", " on ", " under ", " making progress ", " downwards ", " top " and " bottom " and derivative thereof (as, " flatly ", " down ", " up " etc.) should be interpreted as describing and/or accompanying drawing shown in direction.These relational terms are for convenience, do not need equipment with concrete directional structure vectorical structure or operation.About the term of fixing, connecting etc., such as " connection ", " interconnection ", refer to annexation, wherein structure directly or indirectly is connected to each other by intermediate structure or is fixing, movably or be rigidly connected or concern like this too, unless clearly describe in addition.
Although the present invention is described according to exemplary embodiment, the present invention is not restricted to this.Simultaneously, additional claim should be explained in a wide range, with other variants of the present invention and the embodiment that comprises that those skilled in the art can make in the situation that does not depart from scope of the present invention and equivalency range.
Claims (11)
1. method that is used for carrying out at substrate chemically mechanical polishing (CMP) comprises:
Polishing pad at CMP equipment polishes described substrate to remove excess material on the surface of described substrate, use is more than a controllable adjustable member independently, each adjustment means comprises adjustment disk, is pressed onto by the diamond surface that impels each described adjustment disk and regulates described polishing pad on the described polishing pad; Wherein, adjustment means moves along the surface of polishing pad independently, and the rotary speed of adjustment means is independent controlled, and each adjustment means is connected to corresponding regulating arm, and each regulating arm is connected to independently mechanical mobile device;
Wherein, described polishing pad places on the platen, and fixes with respect to described platen, and described polishing comprises the described platen of rotation,
Described method also comprises each the described adjustment means of radially sliding simultaneously along described polishing pad, only comprise along the first segmentation of the radius of described polishing pad first described adjustment means of sliding, and along the another segmentation of the described radius of the described polishing pad second described adjustment means of sliding, regulate like this all positions of described polishing pad.
2. method according to claim 1 also comprises the described diamond surface of each adjustment disk that rotates each described adjustment means,
Wherein, described diamond surface forms the surface of described adjustment disk.
3. method according to claim 1 is wherein used and is regulated described polishing pad more than a controllable adjustment means of independence and comprise mobile described adjustment means, arrives to the surface of described polishing pad.
4. method of be used for regulating the polishing pad of chemically mechanical polishing (CMP) equipment, comprise: impel simultaneously the polishing pad that arrives to the rotation of described CMP equipment more than a controllable adjustment means of independence, each described adjustment means comprises adjustment disk, and adjustment disk has the adjusting surface of the polishing pad of the described rotation of contact;
The method also comprises simultaneously along the first segmentation of the radius of the polishing pad of described rotation first described adjusting of sliding surperficial, slide independently and second describedly regulate the another segmentation of described radius that the surface arrives to the polishing pad of described rotation, regulated so whole described polishing pad, wherein, adjustment means moves along the surface of polishing pad independently, the rotary speed of adjustment means is independent controlled, and each adjustment means is connected to corresponding regulating arm, and each regulating arm is connected to independently mechanical mobile device.
5. method according to claim 4, each described adjusting surface is moved on the wherein said surface that comprises independently along the polishing pad of described rotation of impelling simultaneously.
6. method according to claim 4 also comprises: described when impelling simultaneously, remove excess material on the surface of substrate at the polishing pad of described rotation simultaneously.
7. a chemically mechanical polishing (CMP) equipment comprises:
Be fixedly installed on the polishing pad on the rotatable platen;
Carrier, it keeps polished semiconductor wafer, arrives to described polishing pad; And
Adjusting fixture more than a separation, each is independent controlled, comprise and the contacted adjustment disk of described polishing pad, wherein, the described adjustment disk of each of described equipment radially slides simultaneously along described polishing pad, only comprise along the first segmentation of the radius of described polishing pad first described adjustment disk that slides, and along the another segmentation of the described radius of the described polishing pad second described adjustment disk that slides, regulate like this all positions of described polishing pad, wherein, regulating fixture moves along the surface of polishing pad independently, the adjusting fixture of each separation is rotatable and rotary speed is independent controlled, each is regulated fixture and is connected to corresponding regulating arm, and each regulating arm is connected to independently mechanical mobile device.
8. CMP equipment according to claim 7, wherein each described adjustment disk has diamond surface, and the adjusting fixture of each described separation comprises for so that each described relevant adjustment disk slides through the mechanical mobile device of described polishing pad.
9. CMP equipment according to claim 7 also comprises for the device that applies power to each the described adjustment disk that arrives to described polishing pad.
10. CMP equipment according to claim 7, wherein each described adjustment disk comprises one of bristle and diamond surface.
11. CMP equipment according to claim 7, wherein said semiconductor wafer comprises the diameter that is approximately 450mm, and each described adjustment disk is the surface with dish of the about 100mm of diameter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/464,223 US20100291840A1 (en) | 2009-05-12 | 2009-05-12 | System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks |
| US12/464,223 | 2009-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101898327A CN101898327A (en) | 2010-12-01 |
| CN101898327B true CN101898327B (en) | 2013-05-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010169032.6A Active CN101898327B (en) | 2009-05-12 | 2010-05-11 | System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100291840A1 (en) |
| CN (1) | CN101898327B (en) |
| TW (1) | TWI393182B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8920214B2 (en) * | 2011-07-12 | 2014-12-30 | Chien-Min Sung | Dual dressing system for CMP pads and associated methods |
| US9149906B2 (en) * | 2011-09-07 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for CMP pad conditioning |
| CN106323152B (en) * | 2016-09-05 | 2018-10-02 | 清华大学 | The offline segment processing method and processing system of CMP metal film thickness measurement data |
| US10857651B2 (en) * | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
| CN113263436B (en) * | 2020-05-29 | 2022-08-30 | 台湾积体电路制造股份有限公司 | Chemical mechanical polishing system and method of use |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834377A (en) * | 1997-04-07 | 1998-11-10 | Industrial Technology Research Institute | In situ method for CMP endpoint detection |
| US6390902B1 (en) * | 2001-06-06 | 2002-05-21 | United Microelectronics Corp. | Multi-conditioner arrangement of a CMP system |
| CN1362907A (en) * | 1999-04-01 | 2002-08-07 | 皇家菲利浦电子有限公司 | Dual CMP pad conditioner |
| CN1735479A (en) * | 2003-01-10 | 2006-02-15 | 英特尔公司 | Polishing pad conditioning |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3111892B2 (en) * | 1996-03-19 | 2000-11-27 | ヤマハ株式会社 | Polishing equipment |
| US6135868A (en) * | 1998-02-11 | 2000-10-24 | Applied Materials, Inc. | Groove cleaning device for chemical-mechanical polishing |
| DE10261465B4 (en) * | 2002-12-31 | 2013-03-21 | Advanced Micro Devices, Inc. | Arrangement for chemical mechanical polishing with an improved conditioning tool |
| US6935938B1 (en) * | 2004-03-31 | 2005-08-30 | Lam Research Corporation | Multiple-conditioning member device for chemical mechanical planarization conditioning |
| US7404757B2 (en) * | 2004-06-22 | 2008-07-29 | Samsung Austin Semiconductor, L.P. | Apparatus and method for breaking in multiple pad conditioning disks for use in a chemical mechanical polishing system |
| JP5390750B2 (en) * | 2007-03-30 | 2014-01-15 | ラムバス・インコーポレーテッド | Polishing apparatus and polishing pad regeneration processing method |
| CN102007577B (en) * | 2008-04-16 | 2012-08-29 | 日立化成工业株式会社 | Polishing liquid for cmp and polishing method |
| TWM365218U (en) * | 2009-04-08 | 2009-09-21 | Qing-Chang Chen | A semiconductor device for cleaning a surface of a wafer |
-
2009
- 2009-05-12 US US12/464,223 patent/US20100291840A1/en not_active Abandoned
- 2009-12-18 TW TW098143610A patent/TWI393182B/en active
-
2010
- 2010-05-11 CN CN201010169032.6A patent/CN101898327B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834377A (en) * | 1997-04-07 | 1998-11-10 | Industrial Technology Research Institute | In situ method for CMP endpoint detection |
| CN1362907A (en) * | 1999-04-01 | 2002-08-07 | 皇家菲利浦电子有限公司 | Dual CMP pad conditioner |
| US6390902B1 (en) * | 2001-06-06 | 2002-05-21 | United Microelectronics Corp. | Multi-conditioner arrangement of a CMP system |
| CN1735479A (en) * | 2003-01-10 | 2006-02-15 | 英特尔公司 | Polishing pad conditioning |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100291840A1 (en) | 2010-11-18 |
| CN101898327A (en) | 2010-12-01 |
| TWI393182B (en) | 2013-04-11 |
| TW201041023A (en) | 2010-11-16 |
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