CN101895061A - Semiconductor laser realizing high-power coherent light emission by utilizing grating - Google Patents
Semiconductor laser realizing high-power coherent light emission by utilizing grating Download PDFInfo
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- CN101895061A CN101895061A CN 201010242494 CN201010242494A CN101895061A CN 101895061 A CN101895061 A CN 101895061A CN 201010242494 CN201010242494 CN 201010242494 CN 201010242494 A CN201010242494 A CN 201010242494A CN 101895061 A CN101895061 A CN 101895061A
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Abstract
The invention relates to a semiconductor laser device, in particular to a semiconductor laser realizing high-power coherent light emission by utilizing a grating, which comprises an n-planar electrode, a substrate, a buffer layer, a lower covering, a lower waveguide layer, an active layer, an upper waveguide layer, an upper covering, a contact layer and a p-planar electrode. A periodically changing grating is grown in the semiconductor laser, and has a periodic structure formed by combining the active layer partially carved with a groove and the upper waveguide layer, or combining the active layer partially carved with the groove and the lower waveguide layer, or combining the upper waveguide layer partially carved with the groove and the upper covering, or combining the lower waveguide layer partially carved with the groove and the lower covering; or, the grating has a metal grating structure consisting of the contact layer partially carved with the groove and the p-planar electrode plated on the contact layer. The semiconductor laser locks a lateral light field phase to achieve high spatial coherence, and locks a longitudinal mode to ensure high time coherence so as to fulfill the aim of high-power coherent light emission.
Description
Technical field
The present invention relates to semiconductor laser apparatus, particularly a kind of semiconductor laser that utilizes grating to realize high-power coherent light emission.
Background technology
The spatial model of the low power semiconductor laser of milliwatt level is generally basic mode, beam quality can reach diffraction limit, therefore spatial coherence is better, and single longitudinal mode operation, temporal coherence is also better, thereby can obtain the high laser of coherence, is widely used in relating to metering, laser hologram, fields such as optical communication.Yet this kind semiconductor laser can't satisfy laser radar, and fields such as satellite laser communications are to high power, high coherence's requirement.
Distributed feed-back (DFB) semiconductor laser relies on the feedback effect along the periodically variable optical grating construction of cavity length direction, realize single longitudinal mode operation, and it is wide narrower, can realize single spatial mode work, far field single-lobe, coherence's height.But the fillet tolerance has made it and has gone out luminous power, has influenced its application in the high power field.The phase-locking laser array can be realized higher-wattage, nearly diffraction limit bright dipping, by extensive studies, mainly contain at present that the coupling of anti-waveguide-coupled, Y junction type and X junction type, exocoel are phase-locked, injection locking etc., but to not modulation of longitudinal mode, cause temporal coherence relatively poor, in addition, the difficult control of complex structure, system, array element can not wait too much and all limit it and obtain higher power.Therefore, develop a kind of power height, coherence's semiconductor laser good, simple in structure, that be easy to control is imperative.
Summary of the invention
At above-mentioned situation, be to solve the defective of prior art, problem such as purpose of the present invention just is to provide a kind of semiconductor laser that utilizes grating to realize high-power coherent light emission, can effectively solve the prior art complex structure, and the coherence is poor, and power is low.
The technical scheme that technical solution problem of the present invention is adopted is, a kind of semiconductor laser that utilizes grating to realize high-power coherent light emission, comprise n face electrode, substrate, resilient coating, under-clad layer, lower waveguide layer, active layer, last ducting layer, top covering, contact layer and p face electrode, grow successively above the substrate resilient coating is arranged, under-clad layer, lower waveguide layer, active layer, last ducting layer, top covering and contact layer, be coated with n face electrode below the substrate, be coated with p face electrode on the contact layer, minister has periodically variable grating in this semiconductor laser, said grating agrees with the periodic structure of forming by the active layer and the last ducting layer of part cutting, or agree with the periodic structure of forming by the active layer and the lower waveguide layer of part cutting, or agree with the periodic structure of forming by the last ducting layer and the top covering of part cutting, or agree with the periodic structure of forming, or the metal grating structure of forming by the contact layer and the p face electrode of part cutting by the lower waveguide layer and the under-clad layer of part cutting.
The present invention utilizes the advantage that grating can modulating mode, makes the light field phase locking of side direction, reaches high spatial coherence, and the vertical pattern locking has guaranteed high temporal coherence, thereby realizes the purpose of high-power coherent light emission.
Description of drawings
Fig. 1 is the structure chart of semiconductor laser of the present invention.
Fig. 2 is a grating schematic diagram of the present invention.
Among the figure: 1, n face electrode, 2, substrate, 3, resilient coating, 4, under-clad layer, 5, grating, 6, lower waveguide layer, 7, active layer, 8, go up ducting layer, 9, top covering, 10, contact layer, 11, p face electrode.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.
By Fig. 1, shown in 2, a kind of semiconductor laser that utilizes grating to realize high-power coherent light emission of the present invention, comprise n face electrode 1, substrate 2, resilient coating 3, under-clad layer 4, lower waveguide layer 6, active layer 7, last ducting layer 8, top covering 9, contact layer 10 and p face electrode 11, grow successively above the substrate 2 resilient coating 3 is arranged, under-clad layer 4, lower waveguide layer 6, active layer 7, last ducting layer 8, top covering 9 and contact layer 10, be coated with n face electrode 1 below the substrate 2, be coated with p face electrode 11 on the contact layer 10, minister has periodically variable grating 5 in this semiconductor laser, said grating 5 agrees with the periodic structure of forming by the active layer 7 and the last ducting layer 8 of part cutting, or agree with the periodic structure of forming by the active layer 7 and the lower waveguide layer 6 of part cutting, or agree with the periodic structure of forming by the last ducting layer 8 and the top covering 9 of part cutting, or agree with the periodic structure of forming, or the metal grating structure of forming by the contact layer 10 and the p face electrode 11 of part cutting by the lower waveguide layer 6 and the under-clad layer 4 of part cutting.
Said grating 5 is periodically variable shaped form gratings or respectively along the combination of cavity length direction and the periodically variable orthogonal two kinds of linear pattern gratings of side direction, wherein cavity length direction is the x direction of principal axis, and side direction is the y direction of principal axis.
The part of said contact layer 10 and coupled top covering 9 forms ridge waveguide.
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated, should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Utilize the phase-locked semiconductor laser structure of grating realization to finish by the secondary material epitaxial growth.Said substrate and resilient coating adopt GaAs, and under-clad layer is n-Al
0.5Ga
0.5The As material, the hyperbolic-type grating of employing holographic exposure and reactive ion beam etching technique fabrication cycle variation on last ducting layer, secondary material growth lower waveguide layer n-Al then
0.1Ga
0.9As, active layer In
0.2Ga
0.8The multi-quantum pit structure of As and GaAs, last ducting layer p-Al
0.1Ga
0.6As, top covering p-Al
0.5Ga
0.5As, contact layer p-GaAs.Then, adopt photoetching and lithographic technique to make ridge waveguide, pass through substrate thinning again, with back side plated electrode, entire device completes on ridge waveguide.
In semiconductor laser, introduce the shaped form grating or respectively along the combination of cavity length direction (x axle) and the periodically variable orthogonal two kinds of linear pattern gratings of side direction (y axle), realization is to the modulation of light field both direction, not only longitudinal mode is modulated, can realize single longitudinal mode operation, and to the light field phase locking of side direction, realization single spatial mode work, the temporal coherence and the spatial coherence of raising laser.Simultaneously, without limits wide to the bar of laser, can make wide laser with strip geometry, realize high power.
The present invention utilizes the advantage that grating can modulating mode, makes the light field phase locking of side direction, reaches high spatial coherence, and the vertical pattern locking has guaranteed high temporal coherence, thereby realizes the purpose of high-power coherent light emission.
Claims (3)
1. semiconductor laser that utilizes grating to realize high-power coherent light emission, comprise n face electrode (1), substrate (2), resilient coating (3), under-clad layer (4), lower waveguide layer (6), active layer (7), last ducting layer (8), top covering (9), contact layer (10) and p face electrode (11), grow successively above the substrate (2) resilient coating (3) is arranged, under-clad layer (4), lower waveguide layer (6), active layer (7), last ducting layer (8), top covering (9) and contact layer (10), be coated with n face electrode (1) below the substrate (2), be coated with p face electrode (11) on the contact layer (10), it is characterized in that, minister has periodically variable grating (5) in this semiconductor laser, said grating (5) agrees with the periodic structure of forming by the active layer (7) and the last ducting layer (8) of part cutting, or agree with the periodic structure of forming by the active layer (7) and the lower waveguide layer (6) of part cutting, or agree with the periodic structure of forming by the last ducting layer (8) and the top covering (9) of part cutting, or agree with the periodic structure of forming, or the metal grating structure of forming by the contact layer (10) and the p face electrode (11) of part cutting by the lower waveguide layer (6) and the under-clad layer (4) of part cutting.
2. the semiconductor laser that utilizes grating to realize high-power coherent light emission according to claim 1, it is characterized in that, said grating (5) is a periodically variable shaped form grating or respectively along the combination of cavity length direction and the periodically variable orthogonal two kinds of linear pattern gratings of side direction, wherein cavity length direction is the x direction of principal axis, and side direction is the y direction of principal axis.
3. the semiconductor laser that utilizes grating to realize high-power coherent light emission according to claim 1 is characterized in that, the part formation ridge waveguide of said contact layer (10) and coupled top covering (9).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244368A (en) * | 2011-06-03 | 2011-11-16 | 苏辉 | Directly modulated semiconductor DFB laser with wide temperature and super speed and preparation method thereof |
| CN102593719A (en) * | 2012-03-09 | 2012-07-18 | 北京工业大学 | Edge-emission semiconductor laser for improving light field distribution of active area |
| CN104485403A (en) * | 2014-12-31 | 2015-04-01 | 中国科学院半导体研究所 | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof |
| CN108701963A (en) * | 2016-03-15 | 2018-10-23 | 株式会社东芝 | Distributed feedback laser diode |
| WO2024093873A1 (en) * | 2022-10-31 | 2024-05-10 | 华为技术有限公司 | Micro led chip, display module, and electronic device |
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| CN1747264A (en) * | 2004-09-06 | 2006-03-15 | 中国科学院半导体研究所 | The manufacture method of laser of distributed Blatt reflective semiconductor with tuning wavelength |
| CN200987037Y (en) * | 2006-05-12 | 2007-12-05 | 何建军 | Q-modulated semiconductor laser device with electroabsorption line structure |
| CN101222118A (en) * | 2007-12-10 | 2008-07-16 | 清华大学 | Integrated opto-electronic device for generating high-frequency microwave by light heterodyne method |
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2010
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| CN1747264A (en) * | 2004-09-06 | 2006-03-15 | 中国科学院半导体研究所 | The manufacture method of laser of distributed Blatt reflective semiconductor with tuning wavelength |
| CN200987037Y (en) * | 2006-05-12 | 2007-12-05 | 何建军 | Q-modulated semiconductor laser device with electroabsorption line structure |
| CN101222118A (en) * | 2007-12-10 | 2008-07-16 | 清华大学 | Integrated opto-electronic device for generating high-frequency microwave by light heterodyne method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244368A (en) * | 2011-06-03 | 2011-11-16 | 苏辉 | Directly modulated semiconductor DFB laser with wide temperature and super speed and preparation method thereof |
| CN102593719A (en) * | 2012-03-09 | 2012-07-18 | 北京工业大学 | Edge-emission semiconductor laser for improving light field distribution of active area |
| CN104485403A (en) * | 2014-12-31 | 2015-04-01 | 中国科学院半导体研究所 | Curved waveguide quantum dot super-luminescent diode with gradually-varied curvature and manufacturing method thereof |
| CN108701963A (en) * | 2016-03-15 | 2018-10-23 | 株式会社东芝 | Distributed feedback laser diode |
| WO2024093873A1 (en) * | 2022-10-31 | 2024-05-10 | 华为技术有限公司 | Micro led chip, display module, and electronic device |
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Open date: 20101124 |