CN101894773B - Preparation method of carbon nano tube salient points - Google Patents
Preparation method of carbon nano tube salient points Download PDFInfo
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- CN101894773B CN101894773B CN2010102198907A CN201010219890A CN101894773B CN 101894773 B CN101894773 B CN 101894773B CN 2010102198907 A CN2010102198907 A CN 2010102198907A CN 201010219890 A CN201010219890 A CN 201010219890A CN 101894773 B CN101894773 B CN 101894773B
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Abstract
The invention discloses a preparation method of micro-meso carbon nano tube salient points for micro-electronic encapsulation. Due to the high temperature growing environment of carbon nano tubes, the carbon nano tubes can not directly grow in a semiconductor device to form salient points. Thus, under proper gas ingredients, gas flow and temperature, firstly a carbon nano tube array grows on a catalyst layer composed of aluminium oxide and iron; and then the carbon nano tubes are transferred in the semiconductor device with a circuit graph through a carbon nano tube array transfer technology and forms the carbon nano tube salient points. The transfer technology is achieved by using silicon wafers of isotropic conductive adhesive to press the silicon waters the surface of which the carbon nano tubes grow on under a certain temperature and pressure. Through the preparation method disclosed by the invention, the carbon nano tube salient point array with less than 20-micrometer gaps can be obtained so as so meet the requirements of intensity and miniaturization of electronic components in future.
Description
Technical field
The present invention relates to a kind of little interconnection technique that is used for microelectronics Packaging, adopt the method for made of carbon nanotubes ultra fine-pitch salient point specifically.
Background technology
Upside-down mounting welding Bumping Technology is a kind of high density integrated circuit encapsulation technology, is the basis of novel encapsulated technology, can improve integrated circuit encapsulation technology integral level, satisfies the needs of IC industry development.Upside-down mounting welding Bumping Technology is meant that the chip front side with the band salient point directly is attached on the substrate, realizes electricity, heat and the mechanical connection of chip and substrate down.Compare with the Wire Bonding Technology of routine, Bumping Technology can make interconnection length shorter, and interconnection resistance, inductance value are littler, and the electrical property and the high frequency performance of encapsulation are improved.In recent years, the Bumping Technology development solder bump successively occurred, indium salient point, au bump and copper bump rapidly.The spacing of these salient points can't satisfy the demand for development that electronic devices and components continue densification and miniaturization generally greater than 100 microns.
Iijima Cheng Nan in 1991 has suffered multi-walled carbon nano-tubes at cathode deposit in the process of preparation fullerene.Because carbon nano-tube has particular structure, physics and chemical property, therefore, has become the most promising one-dimensional material of 21 century.Carbon nano-tube is the seamless tubular shaped structure of being curled and being formed by graphite linings, can be divided into multi-walled carbon nano-tubes and Single Walled Carbon Nanotube.Carbon nano-tube has very big draw ratio, very little radius of curvature, the mechanical strength of superelevation, good conduction and heat conductivility, also has stable chemical property etc.Its electric property shows as following five aspects: the energy gap of transistor (energy gap) changes along with helical structure and diameter variation, electronics can form the ballistic transport of scattering, weak localization and Aharonov-Bohm effect in pipe (being called for short the A-B effect), have coulomb blocking effect and adsorbed gas under the low temperature to the influence of band structure etc.These characteristics make carbon nano-tube be fit to very much be applied in field emmision material and the inner material that connects of electronic device.And because the nanoscale yardstick of carbon nano-tube therefore as little connection material, can satisfy the requirement of following electronic devices and components densification and miniaturization.
Summary of the invention
The purpose of this invention is to provide a kind of preparation method who is used for the carbon nano tube salient points of microelectronics Packaging.Because the high growth temperature environment of carbon nano-tube causes the carbon nano tube salient points can not direct growth and take shape on the semiconductor device, therefore need the carbon nano pipe array that growth is good transfer on the required semiconductor device by transfer techniques and form carbon nano tube salient points.Carbon nano tube salient points can significantly improve electricity, heat and the mechanical performance of package interconnect and satisfy the electronic devices and components densification and the miniaturization development trend.Its bump pitch can reach 20 microns even littler.Salient point resistance is similar to copper bump, can reach 6 Ω.
The objective of the invention is to be achieved through the following technical solutions.
A kind of preparation method of carbon nano tube salient points is characterized in that this method has following technical process and step:
1. use the electron beam evaporation plating method on silicon chip, to deposit the Catalytic Layer that one deck is made up of alundum (Al and iron.Wherein, the thickness of alundum (Al is 6～12 nanometers, and the thickness of iron is 1～3 nanometer.
2. the silicon chip that will be loaded with Catalytic Layer is put into reactor and is heated to 500 ℃ and kept 2～6 minutes at the hydrogen stream of 400～700sccm with 150～400 ℃/minute speed, makes Catalytic Layer become the independently catalyst particle of nanoscale.
3. the acetylene air-flow that in reactor, adds 100～250sccm, and silicon chip is heated to 700 ℃ rapidly, carry out the growth of carbon nano-tube.Growth time does not wait from tens seconds to dozens of minutes, depends on the length that needs carbon nanotubes grown.
4. when carbon nano tube growth arrives Len req, stop heating and close hydrogen and acetylene gas, make silicon chip in the nitrogen current of 600～1200sccm, be cooled to room temperature, obtain the long silicon chip that carbon nano pipe array is arranged in surface at this point.
5. in the carbon nano pipe array shifting process, at first,, obtain an isotropic conductive adhesive silicon chip that has circuitous pattern with a silicon chip and a silicon chip mutual extrusion that has isotropic conductive adhesive that has the metallic circuit figure.
6. then, with the silicon chip of surface length silicon chip that carbon nano pipe array arranged and the isotropic conductive adhesive that has circuitous pattern at 150～210 ℃, the temperature and pressure of 25～40N separates the extruding back down, just on the silicon chip of the isotropic conductive adhesive that has circuitous pattern, formed the carbon nano tube salient points array, as Fig. 1.
7. form the titanium that thickness is 10 nanometers/gold metallization coating on the carbon nano tube salient points surface by sputtering method, finish the metallization of carbon nano tube salient points.
Characteristics of the present invention are: use made of carbon nanotubes ultra fine-pitch salient point.The spacing of carbon nano tube salient points can reach 20 microns, therefore, can reduce package dimension, satisfies the needs of high-density packages.
Description of drawings
Fig. 1 carbon nano pipe array forms the carbon nano tube salient points flow chart
SEM photo before and after the column jump of Fig. 2 carbon nano-pipe array
Wherein (a) has the isotropic conductive adhesive silicon chip of circuitous pattern
(b) have the carbon nano tube salient points array of circuitous pattern
(c) shift the silicon chip that the rear surface has carbon nano pipe array
The test result of Fig. 3 carbon nano tube salient points
Embodiment
Describe the present invention below in conjunction with embodiment.
Embodiment 1
In the present embodiment, adopted the preparation method of above-mentioned carbon nano tube salient points, concrete steps are as follows:
1. at first, use the electron beam evaporation plating method on silicon chip, to deposit the Catalytic Layer that one deck is made up of alundum (Al and iron.Wherein, the thickness of alundum (Al is 10 nanometers, and the thickness of iron is 1 nanometer.
2. then, the silicon chip that is loaded with Catalytic Layer is put into reactor be heated to 500 ℃ and kept 3 minutes with 300 ℃/minute speed, make catalyst layer become the independently catalyst particle of nanoscale at the hydrogen stream of 692sccm.
3. the acetylene air-flow that in reactor, adds 200sccm, and silicon chip is heated to 700 ℃ rapidly, carry out the growth of carbon nano-tube.Growth time is 10 minutes.
4.10 after minute, stop heating and close hydrogen and acetylene gas, make silicon chip in the nitrogen current of 1000sccm, be cooled to room temperature, obtain carbon nano pipe array at this point.
5. silicon chip that will have a metallic circuit figure and the silicon chip mutual extrusion that has isotropic conductive adhesive obtain having the isotropic conducting resinl silicon chip of circuitous pattern, as Fig. 2 (a).
6. the silicon chip of the silicon chip that surface length is had a carbon nano pipe array and the isotropic conductive adhesive that has circuitous pattern is at 180 ℃, the temperature and pressure of 30N separates the extruding back down, just on the silicon chip of the isotropic conductive adhesive that has circuitous pattern, formed the carbon nano tube salient points array, as Fig. 2 (b), bump pitch can reach below 20 microns.
7. form the titanium that thickness is 10 nanometers/gold metallization coating on the carbon nano tube salient points surface by sputtering method, finish the metallization of carbon nano tube salient points.Finished the transfer of carbon nano-tube at this point.
The resistance that uses two-point method to record carbon nano tube salient points is 6 Ω (Fig. 3).
Claims (1)
1. the preparation method of a carbon nano tube salient points is characterized in that this method has following technical process and step:
(1) use the electron beam evaporation plating method to deposit the catalyst layer that one deck is made up of alundum (Al and iron on silicon chip, wherein, the thickness of alundum (Al is 6～12 nanometers, and the thickness of iron is 1～3 nanometer;
(2) silicon chip that will be loaded with catalyst layer is put into reactor and is heated to 500 ℃ and kept 2～6 minutes at the hydrogen stream of 400～700sccm with 150～400 ℃/minute speed, makes catalyst layer become the independently catalyst particle of nanoscale;
(3) add the acetylene air-flow of 100～250sccm in reactor, and silicon chip is heated to 700 ℃, carry out the growth of carbon nano-tube, growth time depends on the length that needs carbon nanotubes grown;
(4) when carbon nano tube growth arrives Len req, stop heating and close hydrogen and acetylene gas, make silicon chip in the nitrogen current of 600～1200sccm, be cooled to room temperature;
(5) silicon chip that will have a metallic circuit figure and the silicon chip mutual extrusion that has isotropic conductive adhesive obtain having the isotropic conductive adhesive silicon chip of circuitous pattern;
(6) silicon chip that surface length is had a carbon nano pipe array and the silicon chip of the isotropic conductive adhesive that has circuitous pattern are at 150～210 ℃, the temperature and pressure of 25～40N extruding back has down separately just formed the carbon nano tube salient points array on the silicon chip of the isotropic conductive adhesive that has circuitous pattern;
(7) form the titanium that thickness is 10 nanometers/gold metallization coating on the carbon nano tube salient points surface by sputtering method, finish the metallization of carbon nano tube salient points.
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| CN103227121A (en) * | 2013-04-16 | 2013-07-31 | 上海大学 | Method of realizing chip on glass with carbon nano tube bumps |
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| CN103367185B (en) * | 2013-07-25 | 2016-03-09 | 华进半导体封装先导技术研发中心有限公司 | A kind of method adopting transfer method to make carbon nano tube flexible micro convex point |
| CN106531287B (en) * | 2016-11-09 | 2018-03-20 | 华中科技大学 | A kind of ultra-high purity carbon nanotube conducting slurry and preparation method thereof |
| CN107833839B (en) * | 2017-10-12 | 2020-04-24 | 东南大学 | Push-and-insert type bonding unit based on nanorod structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101276796A (en) * | 2006-09-29 | 2008-10-01 | 英特尔公司 | Carbon nanotube-reinforced solder caps methods of assembling same and chip packages and systems containing same |
| CN101746717A (en) * | 2008-12-01 | 2010-06-23 | 三星电子株式会社 | methods of forming carbon nanotubes |
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| US20070145097A1 (en) * | 2005-12-20 | 2007-06-28 | Intel Corporation | Carbon nanotubes solder composite for high performance interconnect |
| US7713858B2 (en) * | 2006-03-31 | 2010-05-11 | Intel Corporation | Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101276796A (en) * | 2006-09-29 | 2008-10-01 | 英特尔公司 | Carbon nanotube-reinforced solder caps methods of assembling same and chip packages and systems containing same |
| CN101746717A (en) * | 2008-12-01 | 2010-06-23 | 三星电子株式会社 | methods of forming carbon nanotubes |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103227121A (en) * | 2013-04-16 | 2013-07-31 | 上海大学 | Method of realizing chip on glass with carbon nano tube bumps |
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