CN101891197A - Method for preparing silicon nanowire by using other matters in assistant mode - Google Patents
Method for preparing silicon nanowire by using other matters in assistant mode Download PDFInfo
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- CN101891197A CN101891197A CN2009100271040A CN200910027104A CN101891197A CN 101891197 A CN101891197 A CN 101891197A CN 2009100271040 A CN2009100271040 A CN 2009100271040A CN 200910027104 A CN200910027104 A CN 200910027104A CN 101891197 A CN101891197 A CN 101891197A
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Abstract
The invention belongs to the technical field of semiconductor materials, in particular relates to a method for preparing a silicon nanowire by using other matters in an assistant mode. The Si nanowire is prepared by using an OAG mechanism in an assistant mode by using Si oxides or other matters as raw materials and adopting an LAD (least absolute deviation) and direct heat vapor phase method. The method not only can realize the growth of a high-quality intrinsic Si nanowire, but also can prepare a doped nanowire doped with B, P and Er.
Description
Technical field: the invention belongs to technical field of semiconductor, be specifically related to a kind of method of utilizing other material aid preparation silicon nanowires.
Background technology: nanometer science and technology is one and has merged all multidisciplinary emerging modern high technologies, and the research of the preparation of nano material and device application is an important developing direction. in recent years, because one dimension Nano structure is (as nanotube, nano rod, nano wire and nano belt) special property and potential application, having caused people's dense research interest. silicon nanowires is as a kind of novel nano semiconductor material, along with diameter dimension reduce can present surface effects, quantum limitation effect, small-size effect, novel physical propertys such as macro quanta tunnel effect and coulomb blockade effect, make them at magnetic thus, heat, light, aspects such as electricity and catalyzed reaction have the physical properties that significantly is different from other material, thereby at photoluminescence, super large-scale integration, single electron detects, light-detecting device, aspects such as nano-sensor have crucial application.
As the preparation method of silicon nanowires, can be divided into physics method, chemical method and synthetic method substantially. the physics method mainly comprises LAD method, using vaporization condensation process and arc discharge method; Chemical method mainly comprises CVD method, solution reaction method, electrochemical process and polymerization etc.; Synthetic method mainly comprises evaporation suspension method and solid-liquid arc discharge method mutually; And mainly contain VLS, SLS, its preparation methods such as VSS and OAG mechanism by the growth mechanism division.
Summary of the invention: the objective of the invention is to propose a kind of new method of utilizing other material aid preparation silicon nanowires.
The preparation method of silicon nanowires of the present invention is: with Si oxide compound or other material is raw material, adopts LAD and direct heat vapor phase process, with OAG mechanism aid preparation Si nano wire.
The inventive method not only can realize the growth of high quality intrinsic Si nano wire, but also can prepare the doped nanowire of mixing B, P and Er.
Description of drawings: accompanying drawing 1 is the SEM figure of the silicon nanowires of inventive embodiments method preparation.
Embodiment: the present invention is described in detail below in conjunction with embodiment.
Embodiment 1: the SiO powder is blended in the distilled water, is put into then in the reaction vessel of sealing, and heated and stirred. having synthesized diameter is that 30-40nm and length are the Si nano wire of hundreds of nanometer.With the Si source of SiO, under 1100 ℃ of temperature, make its evaporation earlier, then by Ar and H as grow nanowire
2Mixed gas be carried to low temperature 850-1000 ℃, the preparation diameter is 30nm, length is tens microns, the direction of growth is mainly＜111 and＜112〉crystal orientation crystalline state Si nano wire.With wavelength is the Nd of 325nm, and YAG pulse laser irradiation p-Si target makes it be deposited on the p-Si substrate, by adjusting the distance of substrate and target spacing, has prepared differently, and diameter is the Si nano wire of 20～150nm.
Embodiment 2: utilize H
2The assisting growth method has prepared the Si nano wire. and at first on n-Si (100) substrate, the thick zone of oxidation of the growth about 50nm of one deck is utilized the thick Au-Pd alloy rete of the about 0.5nm of deposit of ion sputtering system; Be 650 ℃ and mixed gas (H then in temperature
2With N
2) protection annealing down, to form discrete Au-Pd alloying pellet; At last, at N
2And SiH
4Mixed gas is heating down, and the preparation diameter is 80～110nm, and length is the amorphous Si that has of 1 μ m
xThe Si nano wire of shell.Work as H
2When flow increases, because H
2To Si nano wire top layer SiO
2Etching action, it is littler to prepare diameter, the Si nano wire that length is bigger.
Embodiment 3: utilize the vacuum sputtering method that a certain amount of amorphous C is deposited on the Si substrate, prepared diameter respectively under 1200 ℃ and 1350 ℃ of conditions and be respectively 75-350nm and 50～300nm, length is several microns Si nano wire.Experiment confirm when not adding C, has only produced the Si nano wire of minute quantity; When adding a certain proportion of C, the quantity of Si nano wire increases greatly.
The silicon nanowires of the inventive method preparation can be widely used in aspects such as field-effect transistor, feds, solar cell, transmitter and integrated-optic device.
Claims (4)
1. a method of utilizing other material aid preparation silicon nanowires is characterized in that with Si oxide compound or other material be raw material, adopts LAD and direct heat vapor phase process, with OAG mechanism aid preparation Si nano wire.
2. the method for claim 1 is characterized in that the SiO powder is blended in the distilled water, be put into then in the reaction vessel of sealing, and heated and stirred. having synthesized diameter is that 30-40nm and length are the Si nano wire of hundreds of nanometer.With the Si source of SiO, under 1100 ℃ of temperature, make its evaporation earlier, then by Ar and H as grow nanowire
2Mixed gas be carried to low temperature 850-1000 ℃, the preparation diameter is 30nm, length is tens microns, the direction of growth is mainly＜111 and＜112〉crystal orientation crystalline state Si nano wire.With wavelength is the Nd of 325nm, and YAG pulse laser irradiation p-Si target makes it be deposited on the p-Si substrate, by adjusting the distance of substrate and target spacing, has prepared differently, and diameter is the Si nano wire of 20～150nm.
3. the method for claim 1 is characterized in that utilizing H
2The assisting growth method has prepared the Si nano wire. and at first on n-Si (100) substrate, the thick zone of oxidation of the growth about 50nm of one deck is utilized the thick Au-Pd alloy rete of the about 0.5nm of deposit of ion sputtering system; Be 650 ℃ and mixed gas (H then in temperature
2With N
2) protection annealing down, to form discrete Au-Pd alloying pellet; At last, at N
2And SiH
4Mixed gas is heating down, and the preparation diameter is 80～110nm, and length is the amorphous Si that has of 1 μ m
xThe Si nano wire of shell.Work as H
2When flow increases, because H
2To Si nano wire top layer SiO
2Etching action, it is littler to prepare diameter, the Si nano wire that length is bigger.
4. the method for claim 1, it is characterized in that utilizing the vacuum sputtering method that a certain amount of amorphous C is deposited on the Si substrate, prepared diameter respectively under 1200 ℃ and 1350 ℃ of conditions and be respectively 75-350nm and 50～300nm, length is several microns Si nano wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100271040A CN101891197A (en) | 2009-05-22 | 2009-05-22 | Method for preparing silicon nanowire by using other matters in assistant mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100271040A CN101891197A (en) | 2009-05-22 | 2009-05-22 | Method for preparing silicon nanowire by using other matters in assistant mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101891197A true CN101891197A (en) | 2010-11-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100271040A Pending CN101891197A (en) | 2009-05-22 | 2009-05-22 | Method for preparing silicon nanowire by using other matters in assistant mode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976328A (en) * | 2012-12-24 | 2013-03-20 | 复旦大学 | Preparation method of one-dimensional silicon nano material with controllable appearance |
| CN103950932A (en) * | 2014-04-16 | 2014-07-30 | 奇瑞汽车股份有限公司 | Preparation method of high-purity orderly semiconductor silicon nanowire |
-
2009
- 2009-05-22 CN CN2009100271040A patent/CN101891197A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976328A (en) * | 2012-12-24 | 2013-03-20 | 复旦大学 | Preparation method of one-dimensional silicon nano material with controllable appearance |
| CN103950932A (en) * | 2014-04-16 | 2014-07-30 | 奇瑞汽车股份有限公司 | Preparation method of high-purity orderly semiconductor silicon nanowire |
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| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Tao Weiping Document name: Notification of Publication of the Application for Invention |
|
| DD01 | Delivery of document by public notice |
Addressee: Tao Weiping Document name: Notification of before Expiration of Request of Examination as to Substance |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101124 |