CN101887941A - Preparation method of LED phosphor layer - Google Patents
Preparation method of LED phosphor layer Download PDFInfo
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- CN101887941A CN101887941A CN2010100281295A CN201010028129A CN101887941A CN 101887941 A CN101887941 A CN 101887941A CN 2010100281295 A CN2010100281295 A CN 2010100281295A CN 201010028129 A CN201010028129 A CN 201010028129A CN 101887941 A CN101887941 A CN 101887941A
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Abstract
The invention provides a preparation method of an LED phosphor layer, comprising the following steps: (1) preparing the dispersoid of phosphor powder and photosensory colloid: mixing the particles containing phosphor powder and the photosensory colloid according to an appropriate ratio, dispersing uniformly to form the phosphor powder and photosensory colloid dispersoid-phosphor powder slurry; (2) coating: coating the dispersoid-phosphor powder slurry obtained in step (1) on the LED light-emitting surface to form a phosphor powder photosensory colloid dispersoid coating; (3) exposing and developing: obtaining the phosphor powder photosensory colloid dispersoid coating of the required pattern; and (4) removing the photosensory colloid: removing the photosensory colloid components in the phosphor powder coating to obtain the phosphor powder layer with a determined pattern. The method can overcome the defects in the prior art, and organic components introduced during the preparation process can be removed from the phosphor powder coating layer with determined patterns, thus improving the physicochemical property of the phosphor powder layer, better satisfying the requirement of follow-up encapsulation processes on the physicochemical property of the phosphor powder coating, and being beneficial for realizing efficient phosphor-powder conversion-type LED (PCLED) apparatuses.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to a kind ofly prepare phosphor powder layer, realize the technology of fluorescent material conversion hysteria LED device (PCLED) at the led chip light output surface.
Background technology
LED is that light-emitting diode is the abbreviation of light emitting diode or light emitting device, and chemical constitution and the attribute different according to luminescent material generally often are divided into inorganic LED and organic LED (be OLED, perhaps OLEDs) again.1993, blue GaN led technology obtained to break through, and realizes inorganic LED white light emission on this basis in 1996; And U.S. Koda company reported first in 1987 a kind of novel organic elctroluminescent device (OLEDs), thereby caused the new upsurge of OLEDs device research and development.In recent years, it no matter is inorganic or organic luminescent device (LED/OLED), white light LED part and all be subjected to the great attention of academic and industrial circle in the application study of illumination association area, owing to have low voltage drive, all solid state, low-power consumption, long-acting advantage such as reliable, LED/OLED is a kind of high efficiency light source that meets environmental protection and energy saving green illumination theory, therefore, in worldwide, obtain promotion and development energetically based on the semiconductor lighting technology of white light LEDs/OLED (the 4th generation lighting technology) at present, formed huge industry.
Utilize the photic conversion regime (being PCLED) of led chip excitated fluorescent powder can realize versicolor light output, also be the main path that present LED realizes the illumination white light: a kind of is to apply yellow fluorescent powder (as YAG:Ce on blue chip
3+Deng), the yellow light mix that the part of utilizing chip to send is not absorbed blue light and fluorescent material stimulated emission forms white light; A kind of is to excite the RGB three primary colors fluorescent powder with ultraviolet LED, spacing color mixed formation white light.
For the white light LEDs (PCLED) of photic conversion, the structure of fluorescent coating, characteristic have fundamental influence to the performance of device.
The technology of main flow is that fluorescent powder grain is mixed with transparent colloid (as epoxy glue, silica gel etc.) at present, by a glue, on led chip, apply the mixture layer of fluorescent material and colloid, but the phosphor powder layer structure that obtains like this is inhomogeneous, thereby the lack of homogeneity that causes the LED bright dipping, and the phosphor powder layer poor repeatability between device has greatly restricted mass production and rate of finished products.
At present; a kind of new fluorescent material plane coating notion and thinking (conformal coating) are extremely paid attention to; promptly form the uniform phosphor powder layer of a layer thickness at chip surface; compare with traditional gluing process; the light-emitting uniformity of this plane coating is better; the thickness of phosphor powder layer is controlled easily, and belongs to the production that planarization technology is fit to integrated scale.
In a word, the characteristic of phosphor powder layer, structure and preparation method thereof directly affect the performance of LED device among the PCLED.
Patent ZL200710049460.3 has disclosed a kind of method in led chip surface preparation phosphor powder film layer, the usability optical cement forms pattern and exposes led chip exiting surface (promptly needing to apply the zone of phosphor powder layer), apply fluorescent material in this zone, thereby obtain to have the plane fluorescent bisque of definite figure.
Patent ZL200710049612.X has disclosed a kind of power type white light LED plane coating process based on water soluble photosensitive, adopt fluorescent material photoresists dispersion coating, pass through exposure imaging, form the fluorescent coating figure that needs at the LED exiting surface, but the existence of organic component in the fluorescent coating, its relatively poor light thermal property are bring corresponding influence must for the physicochemical properties of device.
Summary of the invention
Problem to be solved by this invention is: how a kind of LED phosphor powder layer preparation method is provided, this method can overcome defective of the prior art, the organic component of in obtaining to determine the fluorescent coating of figure, getting rid of in the preparation process to be introduced, the physicochemical properties of phosphor powder layer have been improved, can satisfy of the requirement of follow-up packaging technology better, help realizing fluorescent material conversion hysteria LED (PCLED) device efficiently the phosphor powder layer physicochemical characteristic.
Technical problem proposed by the invention is to solve like this: a kind of LED phosphor powder layer preparation method is provided, it is characterized in that, may further comprise the steps:
1. prepare the dispersion of fluorescent material and sensitization colloid (resin): the particle that comprises fluorescent material mixes with the sensitization colloid, evenly disperses, and forms fluorescent material photoresists (resin) dispersion-fluorescent material powder slurry;
2. apply: dispersion-fluorescent material powder slurry that 1. step is obtained is coated on the LED exiting surface, forms fluorescent material photoresists dispersion coating;
3. expose, develop: the fluorescent material photoresists dispersion coating that obtains required pattern;
4. remove photoresists: remove the photoresists composition in the fluorescent coating, obtain having the phosphor powder layer of definite pattern.
Preparation method according to LED phosphor powder layer provided by the present invention is characterized in that, step 1. in, the particle and the ratio between the sensitization colloid that comprise fluorescent material are the sensitization colloid of the particulate matter of 0.05～1.5g: 1ml.
Preparation method according to LED phosphor powder layer provided by the present invention is characterized in that, step 1. in, used sensitization colloid is eurymeric glue or minus glue; Comprise in the particle of fluorescent material and comprise low-melting glass dust, perhaps comprise one or several combinations in other powder body materials such as titanium oxide, silica, zirconia, aluminium oxide, zinc oxide, gallium nitride, carbonitride.
Preparation method according to LED phosphor powder layer provided by the present invention, it is characterized in that, step 1. in, used sensitization colloid comprises polyvinyl alcohol (PVA) and derivative, polyvinyl cinnamate, polyethylene oxygen ethyl-cinnamic acid ester and polyvinylpyrrolidone, and emulsion is a kind of in bichromate, permanganate and the diazonium compound or their combination.
Preparation method according to LED phosphor powder layer provided by the present invention is characterized in that, step 2. in, coating is one or several combinations in spin-coating method, spraying process, dotting glue method, print process and the infusion process.
Preparation method according to LED phosphor powder layer provided by the present invention is characterized in that, step 3. in exposure, in the developing process, adopt the luminous exposure mode certainly of led chip self, perhaps adopt the outer Exposure mode of UV light in conjunction with mask plate.
Preparation method according to LED phosphor powder layer provided by the present invention, it is characterized in that, in step is removed photoresists composition process in the fluorescent coating in 4., any or several combinations in the method that adopts that heated oxide removes photoresist, plasma bombardment removes photoresist, oxygen plasma removes photoresist and laser removes photoresist.
Preparation method according to LED phosphor powder layer provided by the present invention, it is characterized in that, at the coating procedure of step in 2., the LED exiting surface of indication is the light output surface of led chip, or the surface of a light output coupled structure arbitrarily on the led chip light direction.
Preparation method according to LED phosphor powder layer provided by the present invention is characterized in that, described LED comprises organic LED (OLED), inorganic LED and both combinations, and described LED is single a led chip, or same suprabasil plurality of LEDs chipset.
Preparation method according to LED phosphor powder layer provided by the present invention, it is characterized in that, when including low-melting glass dust in the particle that comprises fluorescent material, 4. step further comprises heating coating to uniform temperature (more than or equal to the glass dust melting temperature) and keep time of one, to reach the fusing glass powder with low melting point and to remove the effect of photoresists.
According to the technology of preparing of LED phosphor powder layer provided by the present invention, comprise other compositions that comprise in the particle of fluorescent material, can play bonding effect (such as the glass dust of low melting point temperature); Can play the effect (the even scattering of light) of even light; Also can play the thixotropy (thixotropism) of the fluorescent material photoresists dispersion (fluorescent material powder slurry) of improving preparation, to improve the paintability of fluorescent material powder slurry; Also can in the powder slurry, play the effect of antisettling agent to fluorescent powder grain; The existence of these particles also can improve the compactness and the heat-conductive characteristic of phosphor powder layer.
Technology of preparing according to LED phosphor powder layer provided by the present invention is characterized in that, the particle that comprises fluorescent material of indication can be the fluorescent powder grain that contains other composition integuments, also can be the mixture of fluorescent material and other composition particles.
Technology of preparing according to LED phosphor powder layer provided by the present invention is characterized in that, the utilization present technique can on the LED exiting surface, realize more than one, the phosphor powder layer of different shape.
Technology of preparing according to LED phosphor powder layer provided by the present invention, it is characterized in that, for the application that contains multiple phosphor powder layer, 3. 2. 1. the step that different fluorescent material repeats present technique respectively just can realize the coating structure be made up of the multiple fluorescent powder dispersoid layer of zones of different, 4. realizes multiple phosphor powder layer structure on the LED exiting surface through step at last.
Technology of preparing according to LED phosphor powder layer provided by the present invention, it is characterized in that, in the application that multiple color phosphor powder layer is realized, employing contains the fluorescent material powder slurry of glass powder with low melting point, because the bonding effect after the glass powder with low melting point fusing, 4. 3. 2. 1. the realization of each fluorescent material bisque can realize by the step that repeats present technique, promptly 4. 3. 2. 1. the slurry repeating step that contains second kind of fluorescent material by utilization on the next door of first kind of bisque realize the coating of second kind of phosphor powder layer, so analogize, can realize having the bisque structure of multiple fluorescent material.
Therefore, the technology of the present invention not only is suitable for the white light LED part preparation of gold-tinted fluorescent material+blue-light LED chip, also is suitable for the white light LEDs implementation of ultraviolet LED chip+multicolor phosphor (for example RGB three primary colors fluorescent powder).
The present invention has using value especially in the preparation process of the phosphor powder layer of PCLED type white light LEDs, both can be applied on the led chip of well cutting, meet the industrial technology requirement that present most LED encapsulates enterprise, also can be applied to (wafer is on the wafer scale) before the LED wafer cutting, after the surface of led chip group forms phosphor powder layer, carry out chip cutting, encapsulation again, have very high repetitive operation and volume production consistency.
Description of drawings
Fig. 1 is the technical process schematic diagram of making power type white light LED phosphor powder layer of the present invention.
Wherein, 1, substrate, 2, the P region electrode, 3, the N region electrode, 4, led chip, 5, include the particle of fluorescent material, 6, the photoresists composition, 7, the fluorescent material photoresists dispersion coating after developing, 8, the phosphor powder layer after removing photoresist.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Manufacture method of the present invention is as shown in Figure 1: wherein Fig. 1 a is the structural representation of led chip, Fig. 1 b is the schematic diagram that is coated with the led chip of fluorescent material powder slurry (the photoresists dispersion that includes the particle of fluorescent material), Fig. 1 c is the fluorescent material photoresists dispersion coating pattern schematic diagram that obtains behind the exposure imaging, and Fig. 1 d removes the bisque schematic diagram that comprises fluorescent powder grain that obtains behind the photoresists composition.
Embodiment 1
Get polyvinyl alcohol (PVA), emulsion ammonium dichromate (ADC), fluorescent material, glass powder with low melting point and deionized water and mix, form the stable dispersion of the particle that comprises fluorescent material in PVA.
Adopt dotting glue method that fluorescent material photoresists dispersion is coated in the blue led chip surface.
Connect the led chip both positive and negative polarity, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains the fluorescent material photosensitive plastic coating at the led chip light output surface.
The led chip that will have the fluorescent material photosensitive plastic coating is put into heating furnace, is heated to the temperature above the glass dust fusing point, and keeps a period of time, treats just cooling taking-up behind the organic component burning-off in the photoresists.
Heating process plays the oxidation removal organic component simultaneously, and by the process of cooling curing again after the fusion of glass powder with low melting point, strengthened between fluorescent powder grain and and the LED light output surface between conjugation.
Embodiment 2
With after glass powder with low melting point evenly mixes, heat fused glass dust makes its surface at fluorescent powder grain form one deck integument with fluorescent material.The material that obtains through milling, screening, obtains having the phosphor powder of glass integument again.
Get polyvinyl alcohol (PVA), emulsion ammonium dichromate (ADC), fluorescent powder grain and deionized water and mix, form the dispersion of stable fluorescence powder particles in PVA with glass integument.
Adopt dotting glue method that fluorescent material photoresists dispersion is coated in the blue led chip surface.
Connect the led chip both positive and negative polarity, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains the fluorescent material photosensitive plastic coating at the led chip light output surface.
The led chip that will have the fluorescent material photosensitive plastic coating is put into heating furnace, is heated to the temperature above the glass dust fusing point, and keeps a period of time, treats just cooling taking-up behind the organic component burning-off in the photoresists.
Heating process plays the oxidation removal organic component simultaneously, and by the process of cooling curing again after the fusion of glass powder with low melting point, strengthened between fluorescent powder grain and and the LED light output surface between conjugation.
Get polyvinyl alcohol (PVA), emulsion diazo resin (Diazo), fluorescent material and deionized water and mix, form stable fluorescence powder PVA dispersion.
Adopt dotting glue method that fluorescent material photoresists dispersion is coated in the blue led chip surface.
Connect the led chip both positive and negative polarity, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains the fluorescent material photosensitive plastic coating at the led chip light output surface.
The led chip that will have the fluorescent material photosensitive plastic coating is put into removing of photoresist by plasma equipment, and the way that adopts oxygen plasma to bombard is got rid of the organic component in the photoresists.
Embodiment 4
Get polyvinyl alcohol (PVA), emulsion ammonium dichromate (ADC), fluorescent material, nanometer titanium dioxide titanium valve and deionized water and mix, form the stable dispersion of the particle that comprises fluorescent material in PVA.
Adopt dotting glue method that fluorescent material photoresists dispersion is coated in the blue led chip surface.
Connect the led chip both positive and negative polarity, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains the fluorescent material photosensitive plastic coating at the led chip light output surface.
The led chip that will have the fluorescent material photosensitive plastic coating is put into removing of photoresist by plasma equipment, and the way that adopts oxygen plasma to bombard is removed the organic component in the photoresists.
Embodiment 5
Get polyvinyl alcohol (PVA), emulsion diazo resin (Diazo), fluorescent material and deionized water and mix, form stable fluorescence powder PVA dispersion.
Adopt dotting glue method fluorescent material photoresists dispersion to be coated in the surface of led chip group on the wafer.
Connect the both positive and negative polarity of led chip group, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains corresponding fluorescent material photosensitive plastic coating at each led chip light output surface.
The led chip group (wafer) that will have the fluorescent material photosensitive plastic coating is put into removing of photoresist by plasma equipment, and the way that adopts oxygen plasma to bombard is got rid of the organic component in the photoresists.
Embodiment 6
Get polyvinyl alcohol (PVA), emulsion diazo resin (Diazo), fluorescent material and deionized water and mix, form stable fluorescence powder PVA dispersion.
Adopt dotting glue method fluorescent material photoresists dispersion to be coated in the surface of led chip group on the wafer.
Connect the both positive and negative polarity of led chip group, utilize the chip self-luminous realize photoresists from exposure process, the hot water back of developing obtains corresponding fluorescent material photosensitive plastic coating at each led chip light output surface.
The led chip that will have the fluorescent material photosensitive plastic coating is put into firing equipment, 300～350 degree heating photoresists organic components of a period of time in burning coating.
Claims (11)
1. a LED phosphor powder layer preparation method is characterized in that, may further comprise the steps:
1. prepare the dispersion of fluorescent material and sensitization colloid: the particle that will comprise fluorescent material mixes with the sensitization colloid, evenly disperses, and forms fluorescent material photoresists dispersion-fluorescent material powder slurry;
2. apply: dispersion-fluorescent material powder slurry that 1. step is obtained is coated on the LED exiting surface, forms fluorescent material photoresists dispersion coating;
3. expose, develop: the fluorescent material photoresists dispersion coating that obtains required pattern;
4. remove photoresists: remove the photoresists composition in the fluorescent coating, obtain having the phosphor powder layer of definite pattern.
2. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, step 1. in, the particle and the ratio between the sensitization colloid that comprise fluorescent material are the sensitization colloid of the particulate matter of 0.05～1.5g: 1ml.
3. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, step 1. in, used sensitization colloid is eurymeric glue or minus glue; Comprise in the particle of fluorescent material and comprise low-melting glass dust, perhaps comprise one or several combinations in titanium oxide, silica, zirconia, aluminium oxide, zinc oxide, gallium nitride, the carbonitride.
4. the preparation method of LED phosphor powder layer according to claim 1, it is characterized in that, step 1. in, used sensitization colloid comprises polyvinyl alcohol and derivative, polyvinyl cinnamate, polyethylene oxygen ethyl-cinnamic acid ester and polyvinylpyrrolidone, and emulsion is a kind of in bichromate, permanganate and the diazonium compound or their combination.
5. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, step 2. in, coating is one or several combinations in spin-coating method, spraying process, dotting glue method, print process and the infusion process.
6. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, step 3. in exposure, in the developing process, adopt the luminous exposure mode certainly of led chip self, perhaps adopt the outer Exposure mode of UV light in conjunction with mask plate.
7. the preparation method of LED phosphor powder layer according to claim 1, it is characterized in that, in step is removed photoresists composition process in the fluorescent coating in 4., any or several combinations in the method that adopts that heated oxide removes photoresist, plasma bombardment removes photoresist, oxygen plasma removes photoresist and laser removes photoresist.
8. the preparation method of LED phosphor powder layer according to claim 1, it is characterized in that, at the coating procedure of step in 2., the LED exiting surface of indication is the light output surface of led chip, or the surface of a light output coupled structure arbitrarily on the led chip light direction.
9. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, described LED comprises organic LED, inorganic LED and both combinations.
10. the preparation method of LED phosphor powder layer according to claim 1 is characterized in that, for different fluorescent material, 4. 3. 2. 1. repeating step realize the multiple phosphor powder layer structure on the LED exiting surface.
11. the preparation method of LED phosphor powder layer according to claim 3, it is characterized in that, when including low-melting glass dust in the particle that comprises fluorescent material, 4. step comprises further that heating coating is to reach the effect of fusing glass powder with low melting point and removal photoresists.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608865A (en) * | 2012-02-20 | 2012-07-25 | 胡国兵 | High-temperature-resisting transparent thick-film photoresist and application thereof in preparing LED phosphor layer |
| CN102629650A (en) * | 2012-04-25 | 2012-08-08 | 电子科技大学 | Preparation method of light emitting diode (LED) fluorescent powder layer |
| CN102723425A (en) * | 2012-07-10 | 2012-10-10 | 电子科技大学 | Integrated preparation method for LED fluorescent powder coating |
| CN103824924A (en) * | 2014-02-18 | 2014-05-28 | 张红卫 | Method for manufacturing substrate used for packaging white LED |
| CN104576844A (en) * | 2015-01-13 | 2015-04-29 | 安徽瑞研新材料技术研究院有限公司 | Machining process for white LED packaging substrate |
| CN105789407A (en) * | 2014-12-25 | 2016-07-20 | 江苏豪迈照明科技有限公司 | LED device and preparation method thereof |
| CN106505131A (en) * | 2016-12-30 | 2017-03-15 | 张建伟 | One kind is integrally formed LED and its packaging technology |
| CN110416390A (en) * | 2019-07-30 | 2019-11-05 | 广东省半导体产业技术研究院 | The production method of nanocrystalline LED component and luminescent device |
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| CN101093869A (en) * | 2007-07-26 | 2007-12-26 | 电子科技大学 | Technique for coating layer of power type white light LED plane based on water-soluble sensitization glue |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608865A (en) * | 2012-02-20 | 2012-07-25 | 胡国兵 | High-temperature-resisting transparent thick-film photoresist and application thereof in preparing LED phosphor layer |
| CN102629650A (en) * | 2012-04-25 | 2012-08-08 | 电子科技大学 | Preparation method of light emitting diode (LED) fluorescent powder layer |
| CN102723425A (en) * | 2012-07-10 | 2012-10-10 | 电子科技大学 | Integrated preparation method for LED fluorescent powder coating |
| CN102723425B (en) * | 2012-07-10 | 2015-01-07 | 电子科技大学 | Integrated preparation method for LED fluorescent powder coating |
| CN103824924A (en) * | 2014-02-18 | 2014-05-28 | 张红卫 | Method for manufacturing substrate used for packaging white LED |
| CN105789407A (en) * | 2014-12-25 | 2016-07-20 | 江苏豪迈照明科技有限公司 | LED device and preparation method thereof |
| CN104576844A (en) * | 2015-01-13 | 2015-04-29 | 安徽瑞研新材料技术研究院有限公司 | Machining process for white LED packaging substrate |
| CN106505131A (en) * | 2016-12-30 | 2017-03-15 | 张建伟 | One kind is integrally formed LED and its packaging technology |
| CN110416390A (en) * | 2019-07-30 | 2019-11-05 | 广东省半导体产业技术研究院 | The production method of nanocrystalline LED component and luminescent device |
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Application publication date: 20101117 |