CN101887199B - Liquid crystal display and manufacturing method thereof - Google Patents
Liquid crystal display and manufacturing method thereof Download PDFInfo
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- CN101887199B CN101887199B CN200910057266.9A CN200910057266A CN101887199B CN 101887199 B CN101887199 B CN 101887199B CN 200910057266 A CN200910057266 A CN 200910057266A CN 101887199 B CN101887199 B CN 101887199B
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Abstract
The invention relates to a liquid crystal display and a method for manufacturing bulges at a reflecting area of the liquid crystal display. The method comprises the following steps: providing a base plate, and depositing an inorganic gate insulation layer on the reflecting area of the base plate; covering light resistances on positions, at which bulges need to be arranged, on the inorganic gate insulation layer; and providing etching gas for the base plate which is covered with the inorganic gate insulation layer and the light resistances, so that bulges with smooth surfaces are formed on parts of the inorganic gate insulation layer, which are covered with the light resistances. The method for manufacturing the bulges at the reflecting area of the liquid crystal display has low manufacturing cost and high reflectivity of the reflecting area.
Description
Technical field
The present invention relates to the manufacture method of a kind of liquid crystal indicator and this liquid crystal indicator.
Background technology
Liquid crystal indicator is widely used in mobile phone, personal digital assistant, notebook computer, personal computer and TV domain because having the characteristics such as little, the low radiation of volume, low power consumption.For the consideration of controlling backlight power and outdoor display characteristic, the display screen of a lot of liquid crystal indicators has all adopted reflective-mode, utilize reflector space reflect ambient light to realize the effect of compensate for brightness, therefore, reflectivity and reflection visual angle are all the technical parts that needs consideration.Conventionally, the reflective-mode of the display screen of liquid crystal indicator comprises half-reflection and half-transmission pattern and total reflection pattern.
For increase liquid crystal indicator display screen reflector space reflectivity and reflection visual angle, conventionally at this reflector space, projection (Bump) is set.In prior art, this projection is to adopt the organic film material with high sensitometric characteristic, low-k, utilize photoetching to make it form numerous convex patterns, after organic film pattern being heated by the baking of heating again, sinking and form arch bulge-structure, finally splash-proofing sputtering metal forms reflectance coating in the above, completes reflector space.The method makes this convex surfaces smooth to increase reflectivity, simultaneously because this projection can make incident light to all directions scattering, can obtain reasonable reflection visual angle.
The organic film that said method adopts is owing to having the features such as high optical transmission, low-k and good one-tenth film uniformity, and its price is very high, is unfavorable for the cost of manufacture of the display screen that reduces this liquid crystal indicator.And this organic film size after heating is caved in is bigger than normal, and then the protruding size forming is larger, if increase protruding density, baking collapse after adjacent protrusion be joined together to form sheet, cause the decline of whole reflector space internal projection density, thereby reduced the reflectivity of the display screen of this liquid crystal indicator.
Summary of the invention
In order to solve the technical matters that manufacturing cost is high, reflectivity is low of reflective display screen of liquid crystal indicator of the prior art, be necessary to provide the manufacture method of the liquid crystal indicator that a kind of low cost of manufacture and reflectivity are high.
The present invention also provides a kind of low cost of manufacture and the high liquid crystal indicator of reflectivity.
A manufacture method for liquid crystal indicator echo area projection, comprises the steps: to provide a substrate, at this substrate deposition inorganic insulation layer; At this inorganic insulation layer, need to form protruding position and cover photoresistance; To the substrate that is coated with this inorganic insulation layer and this photoresistance, provide etching gas, remove this photoresistance, so that this inorganic insulation layer is coated with the part of this photoresistance, form the projection that surface is curved surface.
A kind of liquid crystal indicator, comprise a substrate, the surface of this substrate is formed with the pixel cell of multiple array arrangements, and each this pixel cell comprises thin film transistor region and echo area, this echo area comprises that at least one surface is the projection of curved surface, and this projection is formed by inorganic insulating material.
Wherein, this projection is semisphere or elliposoidal.This inorganic insulating material is silicon nitride or monox.The width span of this protruding its maximum width is 2 μ m～5 μ m, and this protruding height is 300nm.This liquid crystal indicator is total-reflection type liquid crystal indicator or Transflective liquid crystal indicator.The thickness of this photoresistance is 1.3 μ m.
Providing in the step of etching gas to the substrate that is coated with this inorganic insulation layer and this photoresistance, also comprise that the air pressure of adjusting this etching gas is to adjust the flexibility of this convex surfaces.
At this inorganic insulation layer, need to form in the step that protruding position covers photoresistance, also comprise and adjust the height that the thickness of this photoresistance convexes to form to adjust this.
Compared with prior art, the manufacture method of the echo area projection of liquid crystal indicator of the present invention, by forming protruding position on this inorganic insulation layer surface, cover this photoresistance, make this substrate cover the surface of this inorganic insulation layer and this photoresistance rough and uneven in surface, thereby make this etching gas at this inorganic insulation layer, not cover the part of this photoresistance, this photoresistance fringe region, near distributed density this photoresistance middle section reduces successively, this inorganic insulation layer does not cover the part of this photoresistance, the fringe region of this photoresistance, the etching speed of the middle section of this photoresistance reduces successively.Thereby this inorganic insulation layer is etched and forms the projection of surface smoothing, and then reduced the absorption that is irradiated to this projection glazed thread, improved reflectivity.The manufacture method of the echo area projection of liquid crystal indicator of the present invention is used the manufacture method cost of the organic film material with high sensitometric characteristic, low-k low.
Accompanying drawing explanation
Fig. 1 is a kind of cross section structure schematic diagram of single pixel region of the liquid crystal indicator with echo area projection.
Fig. 2 to Fig. 6 is each step schematic diagram of the manufacture method of the liquid crystal indicator of preferred embodiments of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1, Fig. 1 is a kind of cross section structure schematic diagram of single pixel region of the liquid crystal indicator with echo area projection.This liquid crystal indicator 10 is half-transparent half-reflection LCDs, this liquid crystal indicator 10 comprises a substrate 11, the surface of this substrate 11 is formed with the pixel cell of multiple array arrangements, each pixel cell is divided into thin film transistor (TFT) (Thin Film Transistor, TFT) district 12, penetrating region 13 and echo area 14.Thin film transistor (TFT) is arranged at this thin film transistor region 12, and this thin film transistor (TFT) comprises the grid 121 that is set in turn in these substrate 11 surfaces, gate insulator 122, semiconductor island 123 and source/drain electrode 124.Preferably, this gate insulator 122 is formed by inorganic insulating material, and this inorganic insulating material is silicon nitride (SiNx) or monox.On this source/drain electrode 124 and this semiconductor island 123, can also be formed with passivation layer, this passivation layer is also formed by inorganic insulating material.
This echo area 14 comprises multiple protruding 141 and this protruding reflection horizon 143 of covering of being arranged at these substrate 11 surfaces.This projection 141 has level and smooth surface profile, that is, the surface of this projection 141 is curved surface, is irradiated to the reflectivity of this projection 141 for increasing extraneous light.Preferably, this projection 141 is semisphere or elliposoidal, and the diameter of this hemispherical projections 141 is that the width of its maximum width of 3 μ m or this elliposoidal projection 141 is 3 μ m.The material of this projection 141 is identical with the material of the gate insulator of this thin film transistor (TFT) 122, is silicon nitride; Or the material of this projection 141, identical with the material that covers the semiconductor island 123 of this thin film transistor (TFT) and the passivation layer of source/drain electrode 124, be silicon nitride.This projection 141 can be synchronizeed with the gate insulator of this thin film transistor (TFT) 122 formation.The material in this reflection horizon 143 is aluminium, silver, aluminium silver alloy or other high reflectance materials.Formation can be synchronizeed with the source electrode of this thin film transistor (TFT) 124 in this reflection horizon 143.
See also Fig. 2 to Fig. 6, Fig. 2 to Fig. 6 is each step schematic diagram of the manufacture method of the liquid crystal indicator of preferred embodiments of the present invention.
This manufacture method mainly comprises the steps: to provide a substrate 11, and the echo area 14 on this substrate 11 deposits a silicon nitride layer 145; At this silicon nitride layer 145, need the position that forms projection 141 to cover photoresistance 15; To the substrate 11 that is coated with this silicon nitride layer 145, provide uniform etching gas 16, this etching gas 16 does not cover the surface of the surface of these photoresistance 15 parts, contiguous these photoresistance 15 fringe regions at contiguous this silicon nitride layer 145, the surperficial distributed density of contiguous these photoresistance 15 middle sections reduces successively, and the etching speed that this silicon nitride layer 145 does not cover the middle section of fringe region, this photoresistance 15 of part, this photoresistance 15 of this photoresistance 15 reduces successively; The part that this silicon nitride layer 145 does not cover this photoresistance 15 is etched and sinks, the part that this silicon nitride layer 145 covers this photoresistance 15 forms projection 141, the fringe region of this projection 141 is etched gradually and forms level and smooth curvedly, and the middle section of this projection 141 covers this photoresistance 15 and is not etched; The partial etching that this silicon nitride layer 145 does not cover this photoresistance 15 is complete, and these photoresistance 15 etchings middle section complete and this projection 141 forms level and smooth surface, and these projection 141 entirety form smooth surface.
Wherein, the step that the position that need to form this projection 141 at this silicon nitride layer 145 covers this photoresistance 15 comprises: on this silicon nitride layer 145, form photoresist layer, this photoresist layer is carried out to etching, only retain this photoresistance of the position that need to form this projection 141.
Wherein, providing in the step of etching gas 16 to the substrate 11 that is coated with this silicon nitride layer 145 and this photoresistance 15, also comprise that the air pressure of adjusting this etching gas 16 is to adjust the flexibility on these projection 141 surfaces.
Wherein, at this silicon nitride layer 145, need the position that forms projection 141 to cover in the step of photoresistance 15, can also comprise that the thickness of adjusting this photoresistance 15 is to adjust the height of these protruding 141 formation.
Wherein, this manufacture method can also comprise: the part that covers these photoresistances 15 at this silicon nitride layer 145 forms after the projection 141 that surface is curved surface, in these projection 141 surface deposition reflection horizon.
Below in conjunction with each accompanying drawing, describe the manufacture method of this liquid crystal indicator 10 in detail:
Refer to shown in Fig. 2, this substrate 11 is provided; Deposition gate metal layer, and this gate metal layer is carried out to etching, form grid 121; Deposited silicon nitride insulation course on this grid 121.Echo area 14 on this substrate 11 is also formed with silicon nitride layer 145, this silicon nitride layer 145 loses gas 16 with the gate insulator 122 of this thin film transistor (TFT) same step shape, because the surface of this silicon nitride layer 145 on this substrate 11 and 15 formation of this photoresistance is rough and uneven in surface, therefore, this etching gas 16 is in the distributed density difference of contiguous this rough and uneven in surface near surface.At sunk part, the distributed density of this etching gas 16 is larger, less at the distributed density of this etching gas 16 of bossing.Concrete, this etching gas 16 does not cover the concentration maximum of the near surface of these photoresistance 15 parts at contiguous this silicon nitride layer 145, and it is the fastest that this silicon nitride layer 145 does not cover the etching speed of these photoresistance 15 parts.According to edge effect, this etching gas 16 is placed in the middle in the concentration of the near surface of contiguous these photoresistance 15 fringe regions, and the etching speed of the fringe region of this photoresistance 15 is placed in the middle.This etching gas 16 is in the concentration minimum of the near surface of contiguous these photoresistance 15 middle sections, and the etching speed of the middle section of this photoresistance 15 is the slowest.
After etching after a while, this silicon nitride layer 145 does not cover the part of this photoresistance 15 and sinks because of etching, and remainder is not etched because covering this photoresistance 15, and therefore, the place that this silicon nitride layer 145 covers this photoresistance 15 forms projection 141.Because the etching speed of these photoresistance 15 fringe regions is greater than the etching speed of these photoresistance 15 middle sections, the fringe region of this photoresistance 15 is etched gradually and forms level and smooth curved surface.
Refer to Fig. 4, then again after etching after a while, the part that this silicon nitride layer 145 does not cover this photoresistance 15 continues to sink because of etching, and the height of this projection 141 is increasing.Because the etching speed of these photoresistance 15 fringe regions is greater than the etching speed of these photoresistance 15 middle sections, these photoresistance 15 fringe regions are etched complete at first, after this, the fringe region of this projection 141 also starts to be etched because this photoresistance 15 not covers and forms level and smooth curved surface.Because the etching speed of these photoresistance 15 middle sections is less than the etching speed of these photoresistance 15 fringe regions, these photoresistance 15 middle sections are not yet etched complete, and the middle section of this projection 141 being covered by this photoresistance 15 is not etched.
Refer to Fig. 5, last, the part that this silicon nitride layer 145 does not cover this photoresistance 15 surface complete and that expose this substrate 11 that is etched at first.The middle section of this photoresistance 15 is also etched complete and exposes the middle section of this projection 141, and the middle section of this projection 141 is also formed level and smooth curved surface by partial etching.The fringe region of this projection 141 is further etched, thereby the part that this silicon nitride layer 145 covers this photoresistance 15 forms the projection 141 of surface smoothing on the whole.Preferably, this projection 141 is semisphere, and the diameter range of this hemispherical projections 141 is 2 μ m～5 μ m, and the height of this projection 141 is 300nm.
Refer to Fig. 6, after the projection 141 of this surface smoothing forms, formation source/drain metal layer, and this source/drain metal layer is carried out to etching, form the source/drain electrode 124 of thin film transistor (TFT), and on the substrate 11 of the echo area 14 of this liquid crystal indicator 10 and this level and smooth formation reflection horizon, surface 143 of protruding 141.Therefore, this reflection horizon 143 forms in same step with the source/drain electrode 124 of this thin film transistor (TFT).
For Transflective liquid crystal indicator, also will be after formation source/drain metal layer, form passivation layer, this projection 141 can be to form together with this passivation layer so, and formation method is identical or approximate with the method that this projection 141 forms together with this gate insulator; Forming after passivation layer, then forming reflective metal layer,, this reflective metal layer and source/drain metal layer do not form in same step.
Compared with prior art, the manufacture method of the liquid crystal indicator 10 of the embodiment of the present invention, by the position that will form projection 141 on these silicon nitride layer 145 surfaces, cover this photoresistance 15, make this silicon nitride layer 145 on this substrate 11 rough and uneven in surface with the surface that this photoresistance 15 forms, thereby make this etching gas 16 at this silicon nitride layer 145, not cover the part of this photoresistance 15, these photoresistance 15 fringe regions, near distributed density these photoresistance 15 middle sections reduces successively, this silicon nitride layer 145 does not cover the part of this photoresistance 15, these photoresistance 15 fringe regions, the etching speed of these photoresistance 15 middle sections reduces successively.Thereby this silicon nitride layer 145 is etched, form the projection 141 of surface smoothing, that is, the surface of projection is curved surface, and then has reduced the absorption that is irradiated to these projection 141 glazed threads.Therefore, the organic film material that the manufacture method of liquid crystal indicator 10 of the present invention has high sensitometric characteristic, low-k compared with the employing use of prior art is low as the manufacture method cost of raised material, and by increase, cover the distribution density of photoresistance 15, the distribution density of this projection 141 of this echo area 14 can be increased, thereby the reflectivity of these liquid crystal indicator 10 echo areas 14 can be effectively improved.
Refer to table 1, table 1 is two kinds of protruding reflective light intensity contrast tables that diameter is different with distribution density.These data are to be 60 degree in the incident angle of the incident light that is irradiated to this substrate 11, and diameter is respectively in two kinds of protruding situations of 8 μ m, 3 μ m and records.In contrast table 1, the 1st, the 2nd row data are known, adopt minor diameter, and the projection of high distribution density can better improve reflection efficiency.
Table 1
| Minimum intensity of light (lux) | Largest light intensity (lux) | Average intensity (lux) | Total light intensity (flux) |
| (8 μ m) for projection | 1.5132e-10 | 11598 | 1224.7 | 0.27555 |
| (3 μ m) for projection | 2.1217e-10 | 14115 | 1498.7 | 0.33721 |
In the above-described embodiment, the part that this silicon nitride layer 145 does not cover this photoresistance 15 surface complete and that expose this substrate 11 that is etched at first.This silicon nitride layer 145 does not cover the surface that yet can not expose this substrate 11 after the partial etching of this photoresistance 15, is not limited to described in above-mentioned embodiment.
The manufacture method of the liquid crystal indicator of above-mentioned embodiment, for Transflective liquid crystal indicator, also can, for total-reflection type liquid crystal indicator, be not limited to described in above-mentioned embodiment.
The projection 141 of the echo area 14 of the liquid crystal indicator 10 of above-mentioned embodiment is semisphere, also can be elliposoidal or triangle.By adjusting the thickness of this photoresistance 15, adjust the height of this projection 141, by adjusting the air pressure of this etching gas 16, adjust the flexibility on these projection 141 surfaces.
The projection 141 of above-mentioned embodiment is to be formed by silicon nitride layer 145 etchings, also can be formed by other inorganic insulating material etchings, is not limited to described in above-mentioned embodiment.The silicon nitride layer 145 of above-mentioned embodiment can independently form, this silicon nitride layer 145 also can be synchronizeed with the gate insulator of this thin film transistor (TFT) of liquid crystal indicator 10 122 formation, and formation also can be synchronizeed with the source/drain electrode 124 of this thin film transistor (TFT) of liquid crystal indicator 10 in this reflection horizon 143.
Without departing from the spirit and scope of the present invention in the situation that, can also form many embodiment that have very big difference.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in instructions.
Claims (19)
1. a liquid crystal indicator, comprise a substrate, the surface of this substrate is formed with the pixel cell of multiple array arrangements, each this pixel cell comprises thin film transistor region and echo area, it is characterized in that: this echo area comprises that at least one surface is the projection of curved surface, described substrate also comprises inorganic insulation layer, described inorganic insulation layer is formed by inorganic insulating material, described projection is by covering photoresistance to inorganic insulation layer, to the substrate that is coated with inorganic insulation layer and photoresistance, provide etching gas, remove photoresistance, so that described inorganic insulation layer is coated with the part formation surface of described photoresistance, is curved surface and forms, the width span of this protruding its maximum width is 2 μ m～5 μ m.
2. liquid crystal indicator as claimed in claim 1, is characterized in that: this projection is semisphere or elliposoidal.
3. liquid crystal indicator as claimed in claim 1, is characterized in that: this inorganic insulating material is silicon nitride or monox.
4. liquid crystal indicator as claimed in claim 1, is characterized in that: this protruding height is 300nm.
5. as the manufacture method of the liquid crystal indicator of any one in claim 1 to 4, comprise the steps:
Provide this substrate, at this substrate deposition inorganic insulation layer;
At this inorganic insulation layer, need to form protruding position and cover photoresistance;
To the substrate that is coated with this inorganic insulation layer and this photoresistance, provide etching gas, remove this photoresistance, so that this inorganic insulation layer is coated with the part of this photoresistance, form the projection that surface is curved surface.
6. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: providing in the step of etching gas to the substrate that is coated with this inorganic insulation layer and this photoresistance, also comprise that the air pressure of adjusting this etching gas is to adjust the flexibility of this convex surfaces.
7. the manufacture method of liquid crystal indicator as claimed in claim 5, is characterized in that: this liquid crystal indicator is total-reflection type liquid crystal indicator or Transflective liquid crystal indicator.
8. the manufacture method of liquid crystal indicator as claimed in claim 5, is characterized in that: the thickness of this photoresistance is 1.3 μ m.
9. the manufacture method of liquid crystal indicator as claimed in claim 5, is characterized in that: inorganic absolutely at this
Edge layer need to form in the step that protruding position covers photoresistance, also comprises and adjusts the height that the thickness of this photoresistance convexes to form to adjust this.
10. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: the step that need to form protruding position covering photoresistance at this inorganic insulation layer comprises: on this inorganic insulation layer, form photoresist layer, this photoresist layer is carried out to etching, only retain this photoresistance that need to form protruding position.
The manufacture method of 11. liquid crystal indicators as claimed in claim 5, it is characterized in that: the thin film transistor region of this liquid crystal indicator comprises thin film transistor (TFT), this thin film transistor (TFT) has the grid, gate insulator, semiconductor island and the source/drain electrode that are set in turn in this substrate surface, and this gate insulator is formed by inorganic insulating material.
The manufacture method of 12. liquid crystal indicators as claimed in claim 11, is characterized in that: on this source/drain electrode and semiconductor island, be also formed with passivation layer, this passivation layer is also formed by inorganic insulating material.
The manufacture method of 13. liquid crystal indicators as claimed in claim 12, is characterized in that: this inorganic insulation layer is this gate insulator or this passivation layer.
The manufacture method of 14. liquid crystal indicators as claimed in claim 11, is characterized in that: also comprise: the part that covers this photoresistance at this inorganic insulation layer forms after the projection that surface is curved surface, at this convex surfaces deposition of reflective layer.
The manufacture method of 15. liquid crystal indicators as claimed in claim 14, is characterized in that: the material in this reflection horizon is aluminium, silver or aluminium silver alloy.
The manufacture method of 16. liquid crystal indicators as claimed in claim 14, is characterized in that: the source/drain electrode of the reflection horizon of this echo area and this thin film transistor (TFT) forms in same step.
The manufacture method of 17. liquid crystal indicators as claimed in claim 5, is characterized in that: this etching gas is uniform etching gas.
The manufacture method of 18. liquid crystal indicators as claimed in claim 5, is characterized in that: do not need the inorganic insulation layer that forms protruding position not etched away completely.
The manufacture method of 19. liquid crystal indicators as claimed in claim 5, is characterized in that: do not need the inorganic insulation layer that forms protruding position to be etched away completely.
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| CN102402042A (en) * | 2011-11-02 | 2012-04-04 | 深圳市华星光电技术有限公司 | LCD (Liquid crystal display) device and preparing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1424749A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Etching process for silicide low dielectric material |
| CN1479144A (en) * | 2002-07-29 | 2004-03-03 | Lg.菲利浦Lcd株式会社 | Method for manufacturing liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479144A (en) * | 2002-07-29 | 2004-03-03 | Lg.菲利浦Lcd株式会社 | Method for manufacturing liquid crystal display device |
| CN1424749A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Etching process for silicide low dielectric material |
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