CN101882614A - Packaging structure of alternating current light-emitting diode - Google Patents
Packaging structure of alternating current light-emitting diode Download PDFInfo
- Publication number
- CN101882614A CN101882614A CN2009101379940A CN200910137994A CN101882614A CN 101882614 A CN101882614 A CN 101882614A CN 2009101379940 A CN2009101379940 A CN 2009101379940A CN 200910137994 A CN200910137994 A CN 200910137994A CN 101882614 A CN101882614 A CN 101882614A
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- China
- Prior art keywords
- emitting diode
- current light
- alternating
- alternating current
- packaging structure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention relates to a packaging structure of an alternating current light-emitting diode, which comprises a heat radiation block, an alternating current light-emitting diode module, a positive pole support, a negative pole support and an insulator substrate, wherein the alternating current light-emitting diode module is electrically connected with the positive pole support and the negative pole support, the insulator substrate is positioned between the alternating current light-emitting diode module and the heat radiation block, and the insulator substrate has the property that the voltage resistance value is larger than 1000V. Therefore, the packaging structure can avoid the risk that the alternating current light-emitting diode device produces high voltage for breaking down a diode chip and further causing electric shock of a person, and a product also meets the requirements of safety certification.
Description
Technical field
The invention relates to a kind of alternating-current light emitting diode (Alternate Current Light Emitting Diode; AC LED), refer in particular to a kind of packaging structure of alternating current light-emitting diode of tool high pressure resistant property.
Background technology
With reference to figure 1, be known package structure for LED schematic diagram.Known package structure for LED shown in the figure mainly is carrying one led chip (chip) 2 on a radiating block (slug) 1, and connects out two gold threads 3 to be electrically connected at anodal support 4 and negative pole support 5 separately from led chip 2.Above-mentioned anodal support 4 and negative pole support 5 are put a power supply (figure does not show) and are made the LED matrix running luminous in order to connect.
AC LED product is directly to contact the alternating voltage that civil power is supplied in when running because of led chip wherein, potential problems have been produced compared to direct current light-emitting diode (DC LED) in the past, promptly may have the situation of high-voltage breakdown led chip, so can cause when human body touches the LED matrix body, getting an electric shock.
With the high pressure resistant safety of UL is example, the high pressure resistant formula of its standard: (1000+2U) volt (Volt), wherein U is the device operating voltage.Therefore when electrical installation requires input voltage to be 120Vrms, need high pressure resistant 1.24KV.Because the encapsulation of general DC LED must not considered this high pressure resistant problem (because Alternating Current Power Supply is converted to the direct current kenel and is depressurized to for example 3.5V through extra control circuit), and on the whole present AC LED follows the packaged type of DC LED, in order to address the above problem, be badly in need of a kind of improvement design at AC LED encapsulating structure, in the hope of meeting relevant safety standard, help the production marketing of manufacturer.
Summary of the invention
The purpose of this invention is to provide a kind of packaging structure of alternating current light-emitting diode, to overcome the defective that exists in the known technology.
For achieving the above object, packaging structure of alternating current light-emitting diode provided by the invention, comprise a radiating block, an alternating-current light emitting diode module, an anodal support, a negative pole support, reach an insulator substrate, wherein the alternating-current light emitting diode module is electrically connected at anodal support and negative pole support, the insulator substrate is between alternating-current light emitting diode module and radiating block, and the insulator substrate has the characteristic of proof voltage value greater than 1000V.
By above-mentioned improvement encapsulating structure, the high pressure resistant property of alternating-current light emitting diode product is promoted to and meets present safety standard (as standards such as UL, CE, TUV, FCC, CSA, PSE, BSMI), can avoid LED to puncture impaired, harmful to human.
Above-mentioned insulator substrate can be the coefficient of heat conduction greater than 100W/mK, for example silicon insulator substrate is more preferred from diamond insulator substrate.
Above-mentioned alternating-current light emitting diode module can be that single alternating-current light emitting diode chip or a plurality of mutual serial connection or alternating-current light emitting diode chip in parallel or a plurality of mutual serial connection or direct current light-emitting diode chip for backlight unit in parallel or a plurality of mutual serial connection or interchange in parallel are taken with the direct current light-emitting diode chip for backlight unit is mixed.Above-mentioned insulator substrate can be the single insulating submounts or disperse and a plurality of submounts blocks of corresponding plural alternating-current light emitting diode chip mutually.
The chip substrate thickness of above-mentioned alternating-current light emitting diode module can be (to contain) more than 100 microns.Above-mentioned radiating block can be the radiating block that copper radiating block or the good radiative material of thermal conductivity are made.
By enforcement of the present invention, can avoid AC light-emitting diode (LED) device generation high-voltage breakdown diode chip for backlight unit and danger that the people is got an electric shock,
Description of drawings
Fig. 1 is known package structure for LED schematic diagram.
Fig. 2 is the packaging structure of alternating current light-emitting diode schematic diagram of a preferred embodiment of the present invention.
Primary clustering symbol description in the accompanying drawing
Radiating block 1,11
Alternating-current light emitting diode chip 121,122,123,124
Led chip 2
Anodal support 4,13
Alternating-current light emitting diode module 12
Submounts block 151,152,153,154
Embodiment
The present invention mainly strengthens the distance between alternating-current light emitting diode chip and its load bearing seat (also being radiating block), causes electric arc conducting load bearing seat in gold thread during with the diode chip for backlight unit circulation to avoid high voltage source, forms human body contact danger and pacifies.
With reference to figure 2, be the packaging structure of alternating current light-emitting diode schematic diagram of a preferred embodiment of the present invention.A packaging structure of alternating current light-emitting diode shown in the figure comprises a radiating block 11, an alternating-current light emitting diode module 12, an insulator substrate 15, one anodal support 13, reaches a negative pole support 14.In this example, alternating-current light emitting diode module 12 is constituted with a plurality of alternating-current light emitting diode chips 121～124 mutual serial connections, and insulator substrate 15 comprises that a plurality of submounts blocks 151～154 are corresponding to above-mentioned alternating-current light emitting diode chip 121～124.
Above-mentioned plural insulator substrate chunk 151～154 is formed on the radiating block 11, and correspondence is being carried plural alternating-current light emitting diode chip 121～124.Electrically connect by gold thread 20 between each alternating-current light emitting diode chip, wherein two outermost alternating-current light emitting diode chips 121,124 also are electrically connected to anodal support 13 and negative pole support 14 by gold thread 21,22 separately.
Specifically, the proof voltage value of insulator substrate 15 is greater than 1000V.Simultaneously, (be generally for example copper of metal material if consider coupling radiating block 11, the about 380W/m of coefficient of heat conduction K) heat passes ability, then can select material to have the good characteristic person of heat conduction, and the preferable coefficient of heat conduction of selecting is greater than the material of 100W/mK silicon (about 120W/mK) for example.More preferably can select the diamond material.Insulator substrate 15 thickness that adopted in the present embodiment are greater than 100 microns.
At high pressure resistant problem, the present invention also advises another kind of solution, chip substrate (the being generally sapphire substrate) thickness that also is about to the alternating-current light emitting diode chip is increased to more than 100 microns and (contains) by known 100～150 micron commonly used, accident that so also can effectively pre-arc protection conducting.Well imagine that in the better Implementation Modes, except the encapsulating structure that adopts extra formation one insulator substrate, also adopt the chip substrate that thickens simultaneously, it is dangerous more to guarantee to suppress electric leakage with this.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated is from should but not only limiting to the foregoing description with described being as the criterion of claim scope of application.
Claims (8)
1. a packaging structure of alternating current light-emitting diode includes a radiating block, an alternating-current light emitting diode module, an anodal support, reaches a negative pole support, and this alternating-current light emitting diode module is electrically connected at this positive pole support and this negative pole support;
It is characterized in that:
This packaging structure of alternating current light-emitting diode comprises an insulator substrate, and this insulator substrate is between this alternating-current light emitting diode module and this radiating block, and wherein this insulator substrate has the characteristic of proof voltage value greater than 1000V.
2. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: the coefficient of heat conduction of this insulator substrate is greater than 100W/mK.
3. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: this insulator substrate is a silicon insulator substrate.
4. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: this insulator substrate is a diamond insulator substrate.
5. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: this alternating-current light emitting diode module comprises the alternating-current light emitting diode chip of a plurality of mutual serial connections.
6. packaging structure of alternating current light-emitting diode as claimed in claim 5 is characterized in that: this insulator substrate comprises a plurality of submounts blocks, corresponding to these a plurality of alternating-current light emitting diode chips.
7. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: the chip substrate thickness of this alternating-current light emitting diode module is more than 100 microns.
8. packaging structure of alternating current light-emitting diode as claimed in claim 1 is characterized in that: this radiating block is the copper radiating block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101379940A CN101882614A (en) | 2009-05-05 | 2009-05-05 | Packaging structure of alternating current light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101379940A CN101882614A (en) | 2009-05-05 | 2009-05-05 | Packaging structure of alternating current light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101882614A true CN101882614A (en) | 2010-11-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101379940A Pending CN101882614A (en) | 2009-05-05 | 2009-05-05 | Packaging structure of alternating current light-emitting diode |
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| Country | Link |
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| CN (1) | CN101882614A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106838669A (en) * | 2016-12-26 | 2017-06-13 | 上海应用技术大学 | High-voltage alternating LED light source and the lighting device being made of it |
-
2009
- 2009-05-05 CN CN2009101379940A patent/CN101882614A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106838669A (en) * | 2016-12-26 | 2017-06-13 | 上海应用技术大学 | High-voltage alternating LED light source and the lighting device being made of it |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20101110 |